CN102931863B - Method for setting up modularized multi-level converter composite structure model - Google Patents
Method for setting up modularized multi-level converter composite structure model Download PDFInfo
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Abstract
The invention discloses a method for setting up a modularized multi-level converter composite structure model in the field of power transmission and distribution technology. Firstly, sub-modules on each bridge arm of a half-bridge converter HBMMC are divided into groups, and the sub-modules in an upper group are changed into full-bridge sub-module FBSM structures, and the sub-modules in a lower group are changed into half-bridge sub-module HBSM structures. Secondly, the upper group and the lower group of every bridge arm are respectively subjected to sequencing gating, and the group in full-bridge sub-module HBSM structures is switched on through adoption of an alternative breakover control method. Finally, six bridge arm electric reactors on a modularized multi-level converter are respectively connected with a discharging access in parallel mode. The method has the advantages that the modularized multi-level converter composite structure model is strong in direct current fault ride-through capability, and simultaneously does not need so many semiconductors like a full-bridge modularized multi-level converter FBMMC, and achieves good uniformity in technology and cost.
Description
Technical field
The invention belongs to power transmission and distribution technical field, particularly relate to a kind of method setting up the structured mixing model of modularization multi-level converter.
Background technology
Modularization multi-level converter (MMC) has successfully been applied in power current inverter, is mainly applied in high voltage direct current (HVDC) field of power transmission.With tradition two, three-level voltage source converter high voltage direct current transmission (Voltage Source Converter based HVDC, VSC-HVDC) Comparatively speaking, modularization multi-level converter high voltage direct current transmission (ModularMultilevel Converter based HVDC, MMC-HVDC) plurality of advantages is had: AC and DC side can control completely, DC bus is without the need to installing capacitor, power electronic equipment has redundancy running ability after a failure, without the need to installing alternating current filter etc.Due to the particular advantages of MMC, MMC-HVDC has become the development trend in following HVDC field.2010, first business-like MMC-HVDC engineering " Trans Bay Cable Project (TBC) " was put into operation in the U.S., and the direct voltage of its highest operation is ± 200kV, the maximum 400MW of transmission capacity.In addition, have all over the world and will put into operation in 2013 more than 4 MMC-HVDC engineerings.The domestic built Shanghai Nanhui flexible direct current engineering put into operation, and be about to start build Zhoushan multiterminal flexible direct current engineering and Dalian flexible direct current engineering all with semi-bridge type MMC(Half-Bridge MMC, HBMMC) be converter topology, at present, nearly all MMC-HVDC engineering is all adopt half-bridge submodule (Half-Bridge Sub-Module, HBSM) topological structure.
When flexible direct current power transmission system generation bipolar DC short trouble, igbt (Insul ated GateBipolar Transistor in HBMMC-HVDC and two, three level VSC-HVDC, IGBT) the afterflow effect of anti-paralleled diode, make AC system at short dot generation three-phase shortcircuit, and converter self cutting-off of short-circuit electric current cannot be relied on, the safe operation of serious harm system.Simultaneously, because the manufacturing process of high voltage large capcity DC circuit breaker is still immature, existing multiterminal flexible direct current engineering necessarily requires direct current cables to have high reliability, namely require extremely low DC Line Fault probability of happening, this limits flexible direct current to a certain extent to the development of multiterminal field of power transmission and application.
For addressing this problem, founder professor R.Marquardt of HBMMC topology describes again the bridge-type MMC (Full-BridgeMMC having and pass through serious DC Line Fault in its paper, FBMMC) structure, each full-bridge submodule (Full-Bridge Sub-module, FBSM) three kinds of level can be exported, it can interrupt the bridge arm current in any direction, and can change the DC bus-bar voltage polarity of MMC, but it needs the semiconductor device of double amount.More than HBMMC one times of semiconductor device required for FBMMC, this seriously constrains again the engineer applied of FBMMC, and this is also the reason that current MMC-HVDC engineering all adopts half-bridge structure
Summary of the invention
Technical problem to be solved by this invention is that MMC can realize preferably DC Line Fault ride-through capability with the least possible semiconductor device, proposes a kind of structured mixing model of modularization multi-level converter of improvement.
Set up a method for the structured mixing model of modularization multi-level converter, it is characterized in that, described method specifically comprises the following steps:
Step 1: the submodule on each brachium pontis of half-bridge converter HBMMC is divided into groups, to be divided into etc. two groups up and down of quantity, every component such as to join at the submodule of quantity, and the submodule of upper group being changed entirely into full-bridge submodule FBSM/ half-bridge submodule HBSM structure, the submodule of lower group is half-bridge submodule HBSM/ full-bridge submodule FBSM structure entirely;
Step 2: each brachium pontis up and down two groups carry out sequence gating respectively, and to adopting the group of full-bridge submodule FBSM structure to take rotation conducting control method to carry out conducting;
Step 3: difference parallel discharge path on each brachium pontis reactor of modularization multi-level converter MMC structure, this converter MMC, when locking, makes path conducting discharge.
Described discharge path comprises bidirectional thyristor in parallel and the series resistance of two-way admittance.
The invention has the beneficial effects as follows, the structured mixing model of the modularization multi-level converter proposed, have stronger DC Line Fault ride-through capability, the semiconductor device simultaneously not needing bridge-type modularization multi-level converter FBMMC so much, it achieves good unification in technology and cost.
Accompanying drawing explanation
Fig. 1 is the topology diagram of general modularization multi-level converter MMC provided by the invention;
Current path when Fig. 2 is submodule topological structure and its failure locking of half-bridge structure MMC provided by the invention; Wherein, (a) is the submodule topological structure of half-bridge structure MMC; Current path when () is the sub-module fault locking of half-bridge structure MMC b;
Current path when Fig. 3 is submodule topological structure and its failure locking of full bridge structure MMC provided by the invention; Wherein, (a) is the submodule topological structure of full bridge structure MMC; Current path when () is the sub-module fault locking of full bridge structure MMC b;
Fig. 4 is the key diagram of hybrid guided mode blocking multilevel converter MMC structural model provided by the invention.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment is elaborated.It should be emphasized that following explanation is only exemplary, instead of in order to limit the scope of the invention and apply.
Fig. 1 is the topology diagram of general modularization multi-level converter MMC provided by the invention.In Fig. 1, A, B and C represent MMC converter AC three-phase respectively; SM1, SM2 ..., SMn, represents first submodule in MMC brachium pontis, second submodule ..., the n-th submodule; L represents brachium pontis reactor; Udc represents the voltage difference between MMC both positive and negative polarity DC bus.
Current path when Fig. 2 is submodule topological structure and its failure locking of half-bridge structure MMC provided by the invention.In Fig. 2, T
1and T
2represent upper and lower two IGBT in half-bridge submodule respectively; D
1and D
2represent the anti-paralleled diode of corresponding insulated gate bipolar transistor IGBT respectively; C0 represents capacitor in half-bridge submodule; Uc represents submodule capacitor voltage; u
smrepresent submodule port output voltage.
Current path when Fig. 3 is submodule topological structure and its failure locking of full bridge structure MMC provided by the invention.In Fig. 3, T
1, T
2, T
3and T
4represent four insulated gate bipolar transistor IGBTs in full-bridge submodule respectively, D
1, D
2, D
3, D
4represent the anti-paralleled diode of corresponding insulated gate bipolar transistor IGBT respectively; C
0represent capacitor in full-bridge submodule; Uc represents submodule capacitor voltage; u
smrepresent submodule port output voltage.
Fig. 4 is the key diagram of hybrid guided mode blocking multilevel converter MMC structural model provided by the invention.In Fig. 4, HBSM represents half-bridge submodule, and FBSM represents full-bridge submodule, U
dcrepresent the voltage difference between MMC both positive and negative polarity DC bus.
The concrete steps setting up structured mixing model are:
Step 1: the change of hybrid guided mode blocking multilevel converter MMC brachium pontis sub modular structure:
As shown in Figure 1, the general topological structure of modularization multi-level converter MMC is made up of three-phase six brachium pontis, and generally its sub modular structure is half-bridge form (as shown in Figure 2), namely HBMMC model, and its DC Line Fault ride-through capability is poor.Fig. 3 is full-bridge submodule topology (FBSM) and its current path figure when failure locking, clearly, it has comparatively outstanding DC Line Fault ride-through capability, effectively can suppress direct fault current, but it need with double semiconductor device, and engineering cost is higher.Preferably DC Line Fault ride-through capability is realized in order to realize the least possible semiconductor device, submodule in the lower brachium pontis (or upper brachium pontis) of original HBMMC converter is changed, submodule on each brachium pontis of original HBMMC converter is divided into groups, to be divided into etc. two groups up and down of quantity, every component such as to join at the submodule of quantity, but the submodule of upper group (or lower group) changes FBSM structure entirely into, the submodule of lower group (or upper group) is HBSM structure entirely, as shown in Figure 4, thus can unification on actualizing technology and cost.
Step 2: each brachium pontis up and down two groups carry out sequence gating respectively, and rotation switch control strategy is added to the group of full-bridge submodule FBSM structure:
In step 1, the brachium pontis submodule of semi-bridge type modularization multi-level converter HBMMC is divided into groups, construct hybrid guided mode blocking multilevel converter MMC, so its corresponding controller will change accordingly, add the control strategy of packet sequencing, can effectively control to make its submodule.Meanwhile, what adopt owing to each brachium pontis there being one group of submodule is full-bridge submodule FBSM structure, and as shown in Figures 3 and 4, full-bridge submodule FBSM has 4 IGBT, and it wants the triggering of pulse will carry out taking the strategy of rotation conducting to control.
Because FBSM has four IGBT, 1) T
1with T
4open-minded, output voltage is capacitance voltage Uc; 2) T
1with T
2open or T
3with T
4open-minded, output voltage is 0; 3) T
2with T
3open-minded, output voltage is-Uc
Due to T
1with T
2open or T
3with T
4open-minded, output voltage is all 0, and so in order to equalizer switch, we need to carry out rotation conducting when output 0 current potential, conducting T during current output 0
1with T
2, next time output 0 time open T
3with T
4.
Step 3: brachium pontis reactor parallel discharge path:
Structured mixing model has the ride-through capability of DC Line Fault, and mixing MMC is after DC Line Fault occurs before converter blocking, and submodule discharges rapidly, and direct voltage decreases; After locking, submodule stops electric discharge, still reserve part electricity, along with the release of brachium pontis reactor energy storage, the electric capacity of submodule can charge, in order to prevent capacitance voltage from overcharging, and the magnitude of voltage making capacitance voltage exceed electric capacity to can bear, need parallel discharge path on six brachium pontis reactors, as shown in Figure 4.That is, the bidirectional thyristor in parallel of two-way admittance in parallel and the discharge path of series resistance on each brachium pontis reactor, when locking, allows this path conducting discharge, avoids electric capacity to overcharge.
The above; be only the present invention's preferably embodiment, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (2)
1. set up a method for the structured mixing model of modularization multi-level converter, it is characterized in that, described method specifically comprises the following steps:
Step 1: the submodule on each brachium pontis of half-bridge converter HBMMC is divided into groups, to be divided into etc. two groups up and down of quantity, every component such as to join at the submodule of quantity, and the submodule of upper group is changed entirely into full-bridge submodule FBSM structure, and the submodule of lower group changes half-bridge submodule HBSM entirely into; Maybe the submodule of upper group is changed entirely into half-bridge submodule HBSM structure, the submodule of lower group changes full-bridge submodule HBSM entirely into;
Step 2: each brachium pontis up and down two groups carry out sequence gating respectively, and to adopting the group of full-bridge submodule FBSM structure to take rotation conducting control method to carry out conducting;
Step 3: difference parallel discharge path on each brachium pontis reactor of modularization multi-level converter MMC structure, when converter MMC locking, makes path conducting discharge.
2. a kind of method setting up the structured mixing model of modularization multi-level converter according to claim 1, is characterized in that, described discharge path is parallel to each brachium pontis reactor both sides, comprises bidirectional thyristor in parallel and the series resistance of two-way admittance.
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