CN102931224A - Interface transition layer composite structure used for P-SiC ohmic contact and preparation method thereof - Google Patents
Interface transition layer composite structure used for P-SiC ohmic contact and preparation method thereof Download PDFInfo
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Abstract
The invention discloses an interface transition layer composite structure used for P-SiC ohmic contact. The interface transition layer composite structure is positioned between a SiC substrate and a metal layer and comprises an enriched-Al layer and a carbide mixing layer with specific chemical composition proportion, wherein the enriched-Al layer is formed on the SiC substrate, a carbide mixing layer with specific chemical composition proportion is formed on the enriched-Al layer, and the metal layer is formed on the carbide mixing layer with specific chemical composition proportion. The invention simultaneously discloses a preparation method for the interface transition layer composite structure. By utilizing the interface transition layer composite structure provided by the invention, the height of the contact potential barrier can be adjusted effectively, the carrier concentration of a contact layer is increased, the carrier tunneling rate is increased, the good ohmic contact of the P type SiC materials can be realized effectively. Furthermore, the preparation method of the interface transition layer composite structure is simple and high in repeatability.
Description
Technical field
The present invention relates to P molded breadth forbidden band material ohmic contact formation technology and alloy technology field, particularly a kind of interface transition layer composite construction for the P-SiC ohmic contact and preparation method thereof.
Background technology
The acquisition of the good ohmic contact quality of broad stopband carborundum (SiC) material is the key factor that realizes SiC device high temperature, high pressure, high frequency and high-power applications.Yet, because the tunnelling quality in hole is much larger than the electron tunneling quality, and the ionization energy of p-type impurity is higher than the ionization energy of N-shaped impurity in the SiC material, the doped level that SiC material P type doping content is difficult to accomplish N-shaped SiC, when particularly adopting the mode of Implantation to form the P type to mix, even doping content reaches 1E20cm
-3Magnitude, but activated the impact of the factors such as annealing, incomplete ionization, in general, the efficient carrier concentration of activation is all at 1E17-1E18cm
-3Between the scope, simultaneously, be subjected to the impact of the factors such as activated at annealing and alloy annealing, the quality of contact surface pattern and interface microstructure also makes a big impact to the quality of ohmic contact, form good, repeatable high P type SiC material ohmic contact and remain a sizable challenge.
At present, existing a lot of research about SiC material P type ohmic contact both at home and abroad, but main research method or experimental method are very large to the dependence of process optimization test, and few with the research and comparison that forms technical elements in P type SiC ohmic contact mechanism; The patent of relevant this respect also all concentrates on selection, the improvement of multilayer metal ohmic contact structure, and the improvement aspect of alloy annealing conditions (see patent CN201032635. Lu Song high mountain etc. a kind of PIN structure 4H-SiC UV photodetector; Patent CN1195883. too field waits on the way. formation method and the semiconductor device of Ohmic electrode).Patent CN101124660. international publication 2006-02-09 WO2006/014346 English .A Ward three generations (are seen in the ohmic contact aspect of also only having relevant nickel-silicide that forms technical standpoint from ohmic contact; JP Haining etc. be used for the nickel of the Silicon-rich of SiC semiconductor device-silicide ohmic contact), reported at article aspect employing carbide or the contact of silicide layer formation good ohmic, but the article or the patent that adopt modified form composite construction provided by the invention to form good ohmic contact aspect all have no report.
Therefore, be subjected to substrate concentration, interface microstructure and surface topography, impact that alloy condition difference is large, the result of the ohmic contact specific contact resistivity rate that obtains in each document both at home and abroad is uneven, and is repeatable poor.Adopting interface transition layer composite construction provided by the invention, is a kind of ohmic contact formation technology of improvement.The ohmic contact of this improvement forms technology can be under the limited condition of P type doped level, utilize Transport In Semiconductors process and semiconductor energy spectral theory as guidance, effectively regulate the contact berrier height, increase and then wear probability, and consider the formation mechanism of ohmic contact, Interface composition and micro-structural, interface configuration and connected mode, surface topography, the aspects such as the thermal stability of contact electrode are on the impact of interface transition layer composite construction, select the preparation condition of optimized interface transition layer composite construction, improve the repeatability that ohmic contact specific contact resistivity rate result obtains.
Summary of the invention
The technical problem that (one) will solve
In view of this, main purpose of the present invention is to provide a kind of interface transition layer composite construction for the P-SiC ohmic contact and preparation method thereof, to solve under the limited condition of P type doped level, the difficult problem of P type SiC material ohmic contact reaches the repeatable purpose that obtains low specific contact resistivity rate.
(2) technical scheme
For achieving the above object, the invention provides a kind of interface transition layer composite construction, this interface transition layer composite construction is between SiC substrate and the metal level, comprise that rich Al layer and specialization study the carbide mixed layer of distribution ratio, wherein, rich Al layer is formed on the SiC substrate, and the carbide mixed layer that specialization studies distribution ratio is formed on the rich Al layer, and metal level is formed on the carbide mixed layer that specialization studies distribution ratio.
In the such scheme, contain the Si of free state in the described rich Al layer, be used for improving SiC substrate surface carrier concentration, increase and then wear probability.The carbide mixed layer that described specialization studies distribution ratio is a kind of or the mixed layer structure of two kinds of carbide, is used for regulating barrier height, makes high potential barrier become the ladder potential barrier, forms the good ohmic contact.
In the such scheme, described specialization studies the carbide mixed layer of distribution ratio, and the ratio of its C and Si is higher than C among the SiC and the ratio of Si.The carbide mixed layer that described specialization studies distribution ratio is the mixed layer structure of Ti, Si, C ternary compound and Al, C binary compound, is used for producing interface transition layer with the SiC substrate surface reactions.The mark of Ti atom is that the mark of 1, C atom is 2 more than or equal to 3 marks less than or equal to 4, Si atom in described Ti, Si, the C ternary compound.The mark of Al atom is that the mark of 4, C atom is 3 in described Al, the C binary compound.Described specialization studies that part C derives from C residual in the technical process in the carbide mixed layer of distribution ratio.Described specialization studies the carbide mixed layer of distribution ratio, its work function more than or equal to 5eV less than 6.5eV.
For achieving the above object, the present invention also provides a kind of method of making the interface transition layer composite construction, comprising:
Step 1: clean the SiC substrate;
Step 2: dry SiC substrate;
Step 3: on the SiC substrate for the preparation of the mask of mesa etch;
Step 4: the SiC substrate is carried out mesa etch;
Step 5: the SiC substrate after etching is spared the glue photoetching, forms the metal-stripping figure;
Step 6: the SiC substrate is carried out surface treatment, and the activating surface performance is conducive to form interface transition layer;
Step 7: carrying out surface-treated SiC substrate evaporation Ti/A1 metal level;
Step 8: peel off the Ti/Al metal level that is deposited on the photoresist;
Step 9: sputter Ni/Au cap rock metal on the SiC substrate that has evaporated the Ti/Al metal level;
Step 10: heat;
Step 11: high temperature alloy annealing forms the interface transition layer composite construction.
In the such scheme, cleaning the SiC substrate described in the step 1, is to use acetone, ethanol, deionized water to wash successively the SiC substrate surface, and use N
2Dry up; Wherein this SiC substrate has Three regions from top to bottom, is followed successively by from top to bottom N+ district, N-district and P district.
In the such scheme, dry SiC substrate described in the step 2 is the SiC substrate to be put into 120 ℃ baking oven, at N
2Baking is 10 minutes under the atmosphere.
In the such scheme, described in the step 3 on the SiC substrate for the preparation of the mask of mesa etch, be at 9920 photoresists of the SiC substrate surface applied thickness 3 μ m mask as mesa etch, then photoresist is carried out the figure that photoetching forms mesa-isolated.
In the such scheme, described in the step 4 the SiC substrate is carried out mesa etch, the figure that is the mesa-isolated that forms is mask, and the SiC substrate is carried out the ICP dry etching, is etched to the N-district of SiC substrate, and carve fully thoroughly in the P district of SiC substrate.
In the such scheme, the SiC substrate described in the step 5 after etching is spared the glue photoetching, forms and peels off figure, is to use the AZ5214E photoresist, and the SiC substrate surface coating a layer thickness after etching is the photoresist of 2.2 μ m, then carries out photoetching development.
In the such scheme, described in the step 6 the SiC substrate is carried out surface treatment, the activating surface performance is to adopt HF: H
2The solution corrosion of O (volume ratio is 1: 10) 30 seconds, and use N
2Dry up.
In the such scheme, having carried out surface-treated SiC substrate evaporation Ti/Al metal level, be to use evaporator described in the step 7, evaporation Ti/Al metal film, wherein the atomic percent of Al atom in the Ti/Al metal film is 70-80at.%, and Ti/Al metal film gross thickness is 190nm to 400nm.
In the such scheme, peel off the Ti/Al metal level that is deposited on the photoresist described in the step 8, that the SiC substrate that will be evaporated the Ti/Al metal film is immersed in the acetone soln, soaked 20 minutes, then in ultrasonic container ultrasonic 3 minutes, the SiC substrate is taken out put into ethanol solution, ultrasonic 3 minutes again, use again deionized water rinsing 6 times, dry up at last.
In the such scheme, described in the step 9 on the SiC substrate that has evaporated the Ti/Al metal level sputter Ni/Au cap rock metal, be to use sputtering unit, sputter Ni/Au cap rock metal film, wherein the thickness range of Ni metal film is between the 55nm to 150nm, and Au layer thickness of metal film is less than Ni layer metal thickness.
In the such scheme, heating described in the step 10, is the SiC substrate with Ni/Au cap rock metal and Ti/Al metal level to be put into high temperature furnace be heated to uniform temperature, and this temperature is lower than the temperature that Ti or Al element and carborundum react.
In the such scheme, the annealing of high temperature alloy described in the step 11 is to use high-temperature annealing furnace, adopts the high temperature alloy technology to anneal, and wherein, annealing temperature is between 800 ℃-1000 ℃, time 2-10 minute.
(3) beneficial effect
Can find out that from technique scheme the present invention has following beneficial effect:
1, utilizes the present invention, owing to adopted the interface transition layer composite construction, rather than metal directly contacts with the SiC substrate, and the high potential barrier that metal and SiC are directly contacted is decomposed into the ladder potential barrier, so effectively reduce the contact berrier height, it is a kind of ohmic contact formation technology of improvement;
2, utilize the present invention, because specialization studies the carbide lamella of distribution ratio in the interface transition layer composite construction, not only can regulate the contact berrier height, it is residual effectively to remove the C that produces in the technical process, so reduced the impact of technique on device performance;
3, utilize the present invention, owing between metal and SiC substrate, inserted an interface transition layer composite construction, make it metal level and the SiC substrate isolation is opened, so be subjected to SiC substrate P type doped level, the impact that activates the factors such as annealing, incomplete ionization is little, be easy to form good ohmic and contact.
4, utilize the present invention, because the existence of rich Al layer in the interface transition layer composite construction can form good contact with carbide lamella on the one hand, can improve carrier concentration again on the other hand, so be easy to form good contact with P type SiC;
5, utilize the present invention, because near the SiC substrate in the interface transition layer composite construction is rich Al layer, and the Si that contains free state in this layer, can improve SiC substrate surface carrier concentration, so effectively evaded the limited impact on the mechanism of then wearing of SiC material P type doped level, increased charge carrier and then worn probability.
6, utilize the present invention, because the interface transition layer composite construction, making step is simple, and is repeatable high, so be subjected to the impact of substrate concentration, interface microstructure and surface topography little, the reproducibility of results of the ohmic contact specific contact resistivity rate that obtains is high.
Description of drawings
Fig. 1 is the schematic diagram according to the interface transition layer composite construction of the embodiment of the invention;
Fig. 2 is the method flow diagram according to the making interface transition layer composite construction of the embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
By being with and the carrier transport analysis, set up interface transition layer composite construction band model, the interface transition layer composite construction that potential barrier is thin and low, carrier concentration is high is proposed.
As shown in Figure 1, Fig. 1 is the schematic diagram according to the interface transition layer composite construction of the embodiment of the invention; Wherein, the 1st, SiC substrate; The 2nd, rich Al layer; The 3rd, a kind of mixed layer structure of or two kinds of carbide, the carbide lamella of this interface transition layer composite construction is the mixed layer structure of Ti, Si, C ternary compound and Al, C binary compound, wherein C/Si is than the C/Si ratio that is higher than SiC; The 4th, metal level, this metal level is multi-layer metal structure, comprise the Ti/Al metal layer by layer with the Ni/Au cap rock.
Interface transition layer composite construction shown in Figure 1 is between SiC substrate and the metal level, comprise that rich Al layer and specialization study the carbide mixed layer of distribution ratio, wherein, rich Al layer is formed on the SiC substrate, the carbide mixed layer that specialization studies distribution ratio is formed on the rich Al layer, and metal level is formed on the carbide mixed layer that specialization studies distribution ratio.The Si that contains free state in the rich Al layer is used for improving SiC substrate surface carrier concentration, increases and then wears probability.The carbide mixed layer that specialization studies distribution ratio is a kind of or the mixed layer structure of two kinds of carbide, is used for regulating barrier height, makes high potential barrier become the ladder potential barrier, forms the good ohmic contact.
Wherein, specialization studies the carbide mixed layer of distribution ratio, and the ratio of its C and Si is higher than C among the SiC and the ratio of Si.The carbide mixed layer that specialization studies distribution ratio is the mixed layer structure of Ti, Si, C ternary compound and Al, C binary compound, is used for producing interface transition layer with the SiC substrate surface reactions.The mark of Ti atom is that the mark of 1, C atom is 2 more than or equal to 3 marks less than or equal to 4, Si atom in Ti, Si, the C ternary compound.The mark of Al atom is that the mark of 4, C atom is 3 in Al, the C binary compound.Specialization studies that part C derives from C residual in the technical process in the carbide mixed layer of distribution ratio.Specialization studies the carbide mixed layer of distribution ratio, its work function more than or equal to 5eV less than 6.5eV.
Based on interface transition layer composite construction shown in Figure 1, Fig. 2 shows the processing step of making this interface transition layer composite construction, this interface transition layer composite construction is to form by evaporating Ti/Al based composite metal system, adopting deposited film heating method and high temperature alloy method for annealing to combine.Rich Al layer is to realize by regulating Al composition and alloy annealing conditions, and physical parameter, interface configuration and the connected modes such as the composition of carbide lamella and micro-structural, work function are to control by kind, composition proportion, thickness, the alloy annealing conditions of each layer metal in the control composition metal system.Wherein, this metal system is multi-layer metal structure, comprises Ti/Al layer and Ni/Au cap rock, and the Ti/Al layer is metal level, and the acting as of Ni/Au cap rock prevents that Al from spattering and collapse at device surface, ensure alloy pattern and device performance.And strictly control Al composition accounting and film gross thickness in the Ti/Al film, and make in the Ni/Au film Ni film thickness greater than the Au film thickness.Its concrete making step comprises:
Step 1: clean the SiC substrate; Use acetone, ethanol, deionized water to wash successively the SiC substrate surface, and use N
2Dry up; Wherein this SiC substrate has Three regions from top to bottom, is followed successively by from top to bottom N+ district, N-district and P district.
Step 2: dry SiC substrate; The SiC substrate is put into 120 ℃ baking oven, at N
2Baking is 10 minutes under the atmosphere.
Step 3: on the SiC substrate for the preparation of the mask of mesa etch; At 9920 photoresists of the SiC substrate surface applied thickness 3 μ m mask as mesa etch, then photoresist is carried out the figure that photoetching forms mesa-isolated.
Step 4: the SiC substrate is carried out mesa etch; Take the figure of the mesa-isolated that forms as mask, the SiC substrate is carried out the ICP dry etching, be etched to the N-district of SiC substrate, carve fully thoroughly in the P district of SiC substrate.
Step 5: the SiC substrate after etching is spared the glue photoetching, forms to peel off figure; Use the AZ5214E photoresist, the SiC substrate surface coating a layer thickness after etching is the photoresist of 2.2 μ m, then carries out photoetching development.
Step 6: the SiC substrate is carried out surface treatment, and the activating surface performance is conducive to form interface transition layer; Adopt HF: H
2The solution corrosion of O (volume ratio is 1: 10) 30 seconds, and use N
2Dry up.
Step 7: carrying out surface-treated SiC substrate evaporation Ti/Al metal level; Use evaporator, evaporation Ti/Al metal film, wherein the atomic percent of Al atom in the Ti/Al metal film is 70-80at.%, Ti/Al metal film gross thickness is 190nm to 400nm.
Step 8: peel off the Ti/Al metal level that is deposited on the photoresist; The SiC substrate that is evaporated the Ti/Al metal film is immersed in the acetone soln, soaked 20 minutes, then in ultrasonic container ultrasonic 3 minutes, the SiC substrate is taken out put into ethanol solution again, ultrasonic 3 minutes, use again deionized water rinsing 6 times, dry up at last.
Step 9: sputter Ni/Au cap rock metal on the SiC substrate that has evaporated the Ti/Al metal level; Use sputtering unit, sputter Ni/Au cap rock metal film, wherein the thickness range of Ni metal film is between the 55nm to 150nm, Au layer thickness of metal film is less than Ni layer metal thickness.
Step 10: heat; The SiC substrate that will have Ni/Au cap rock metal and a Ti/Al metal level is put into high temperature furnace and is heated to uniform temperature, and this temperature is lower than the temperature that Ti or Al element and carborundum react.
Step 11: high temperature alloy annealing forms the interface transition layer composite construction.Use high-temperature annealing furnace, adopt the high temperature alloy technology to anneal, wherein, annealing temperature is between 800 ℃-1000 ℃, time 2-10 minute, forms the interface transition layer composite construction.
Embodiment:
1) interface transition layer composite construction.By the analysis to interface transition layer composite construction band model, selected composite construction is that rich Al layer adds Ti
3SiC
2The structure of carbide.
2) preparation technology of interface transition layer composite construction.
Its key step comprises: be that the ion implantation high temperature of 550Kev (thickness of P type implanted layer is about 0.7um) activates sample for highest energy, carry out strict cleaning step, and adopt 120 ℃ in baking oven that 10min is dried; Use 9920 photoresists, 2000rpm produces the 3.1um thick photoresist, as the mask of mesa etch; Adopt ICP etching 400s, the about 0.8um of the mesa etch degree of depth; Use the AZ5214E photoresist, produce the photoresist lift off layer of the about 2.2um of thickness; Adopt HF: H
2The about 30sec of solution corrosion of O (1: 10), N
2Fully dry up; Use evaporator, evaporation Ti/Al (50/140nm) metal film; The chip of finishing sputter is immersed in the acetone soln, soaks 20min, then ultrasonic 3min in ultrasonic container takes out horse back with chip and puts into ethanol solution, and ultrasonic 3min uses deionized water rinsing 6 times again.Dry up at last chip; Use sputtering unit, sputter Ni/Au (55/45nm) cap rock metal film; This deposited film is put into high temperature furnace be heated to 650 ℃, keep 10min; Adopt high-temperature annealing furnace, alloy condition is 1000 ℃, 2min; The device preparation is finished, and carries out the analysis of TLM graphics test, and the I-V characteristic curve is linear, illustrates to form ohmic contact.
In sum, interface transition layer composite construction provided by the invention, potential barrier is thin and low, carrier concentration is high, wherein, the carbide lamella work function is between metal and the P type SiC material, can effectively regulate contact berrier, make the high potential barrier of contact be decomposed into the ladder potential barrier, thereby effectively reduce schottky barrier height; And being formed with of carbide that specialization studies distribution ratio is beneficial to that to remove the C that produces in the technical process residual; Rich Al layer can form good ohmic with carbide lamella on the one hand and contact, and carrier concentration is high on the other hand, is easy to form good contact with P type SiC; Therefore, when charge carrier is excited to higher-energy, run into this interface transition layer composite construction, just caused the penetration tunnel probability to increase, thereby form the method for good ohmic contact.
Simultaneously, interfaces transition layer manufacturing method thereof provided by the invention, simple, repeatable high, it is little affected by substrate concentration, interface microstructure and surface topography.Adopting interface transition layer composite construction provided by the invention, is a kind of ohmic contact formation technology of improvement.The ohmic contact of this improvement forms technology can make P type carbofrax material form the good ohmic contact under the limited condition of P type doped level, also forms technology and alloy technology field applicable to other wide-band gap material ohmic contact.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (21)
1. interface transition layer composite construction, it is characterized in that, this interface transition layer composite construction is between SiC substrate and the metal level, comprise that rich Al layer and specialization study the carbide mixed layer of distribution ratio, wherein, rich Al layer is formed on the SiC substrate, and the carbide mixed layer that specialization studies distribution ratio is formed on the rich Al layer, and metal level is formed on the carbide mixed layer that specialization studies distribution ratio.
2. interface transition layer composite construction according to claim 1 is characterized in that, contains the Si of free state in the described rich Al layer, is used for improving SiC substrate surface carrier concentration, increases and then wears probability.
3. interface transition layer composite construction according to claim 1, it is characterized in that the carbide mixed layer that described specialization studies distribution ratio is a kind of or the mixed layer structure of two kinds of carbide, be used for regulating barrier height, make high potential barrier become the ladder potential barrier, form the good ohmic contact.
4. interface transition layer composite construction according to claim 3 is characterized in that, described specialization studies the carbide mixed layer of distribution ratio, and the ratio of its C and Si is higher than C among the SiC and the ratio of Si.
5. interface transition layer composite construction according to claim 3, it is characterized in that, the carbide mixed layer that described specialization studies distribution ratio is the mixed layer structure of Ti, Si, C ternary compound and Al, C binary compound, is used for producing interface transition layer with the SiC substrate surface reactions.
6. interface transition layer composite construction according to claim 5 is characterized in that, the mark of Ti atom is that the mark of 1, C atom is 2 more than or equal to 3 marks less than or equal to 4, Si atom in described Ti, Si, the C ternary compound.
7. interface transition layer composite construction according to claim 5 is characterized in that, the mark of Al atom is that the mark of 4, C atom is 3 in described Al, the C binary compound.
8. interface transition layer composite construction according to claim 4 is characterized in that, described specialization studies that part C derives from C residual in the technical process in the carbide mixed layer of distribution ratio.
9. interface transition layer composite construction according to claim 3 is characterized in that, described specialization studies the carbide mixed layer of distribution ratio, its work function more than or equal to 5eV less than 6.5eV.
10. a method of making each described interface transition layer composite construction in the claim 1 to 9 is characterized in that, comprising:
Step 1: clean the SiC substrate;
Step 2: dry SiC substrate;
Step 3: on the SiC substrate for the preparation of the mask of mesa etch;
Step 4: the SiC substrate is carried out mesa etch;
Step 5: the SiC substrate after etching is spared the glue photoetching, forms the metal-stripping figure;
Step 6: the SiC substrate is carried out surface treatment, the activating surface performance;
Step 7: carrying out surface-treated SiC substrate evaporation Ti/Al metal level;
Step 8: peel off the Ti/Al metal that is deposited on the photoresist;
Step 9: sputter Ni/Au cap rock metal on the SiC substrate that has evaporated the Ti/Al metal level;
Step 10: heat;
Step 11: high temperature alloy annealing forms the interface transition layer composite construction.
11. the manufacture method of interface transition layer composite construction according to claim 10 is characterized in that, cleans the SiC substrate described in the step 1, is to use acetone, ethanol, deionized water to wash successively the SiC substrate surface, and use N
2Dry up; Wherein this SiC substrate has Three regions from top to bottom, is followed successively by from top to bottom N+ district, N-district and P district.
12. the manufacture method of interface transition layer composite construction according to claim 10 is characterized in that, dry SiC substrate described in the step 2 is the SiC substrate to be put into 120 ℃ baking oven, at N
2Baking is 10 minutes under the atmosphere.
13. the manufacture method of interface transition layer composite construction according to claim 10, it is characterized in that, described in the step 3 on the SiC substrate for the preparation of the mask of mesa etch, be at 9920 photoresists of the SiC substrate surface applied thickness 3 μ m mask as mesa etch, then photoresist carried out the figure that photoetching forms mesa-isolated.
14. the manufacture method of interface transition layer composite construction according to claim 10, it is characterized in that, described in the step 4 the SiC substrate is carried out mesa etch, the figure that is the mesa-isolated that forms is mask, the SiC substrate is carried out the ICP dry etching, be etched to the N-district of SiC substrate, carve fully thoroughly in the P district of SiC substrate.
15. the manufacture method of interface transition layer composite construction according to claim 10, it is characterized in that, SiC substrate described in the step 5 after etching is spared photoresist, form the metal-stripping figure, to use the AZ5214E photoresist, SiC substrate surface coating a layer thickness after etching is the photoresist of 2.2 μ m, then carries out photoetching development.
16. the manufacture method of interface transition layer composite construction according to claim 10 is characterized in that, described in the step 6 the SiC substrate is carried out surface treatment, the activating surface performance is conducive to form interface transition layer, is to adopt HF: H
2The solution corrosion of O (volume ratio is 1: 10) 30 seconds, and use N
2Dry up.
17. the manufacture method of interface transition layer composite construction according to claim 10, it is characterized in that, carrying out surface-treated SiC substrate evaporation Ti/Al metal level described in the step 7, to use evaporator, evaporation Ti/Al metal film, wherein the atomic percent of Al atom in the Ti/Al metal film is 70-80at.%, and Ti/Al metal film gross thickness is 190nm to 400nm.
18. the manufacture method of interface transition layer composite construction according to claim 10, it is characterized in that, peel off the Ti/Al metal level that is deposited on the photoresist described in the step 8, be that the SiC substrate that will be evaporated the Ti/Al metal film is immersed in the acetone soln, soaked 20 minutes, then in ultrasonic container ultrasonic 3 minutes, again the SiC substrate is taken out and put into ethanol solution, ultrasonic 3 minutes, use again deionized water rinsing 6 times, dry up at last.
19. the manufacture method of interface transition layer composite construction according to claim 10, it is characterized in that, described in the step 9 on the SiC substrate that has evaporated the Ti/Al metal level sputter Ni/Au cap rock metal, to use sputtering unit, sputter Ni/Au cap rock metal film, wherein the thickness range of Ni metal film is between the 55nm to 150nm, and Au layer thickness of metal film is less than Ni layer metal thickness.
20. the manufacture method of interface transition layer composite construction according to claim 10, it is characterized in that, heat described in the step 10, be that the SiC substrate that will have Ni/Au cap rock metal and a Ti/Al metal level is put into high temperature furnace and is heated to uniform temperature, this temperature is lower than the temperature that Ti or Al element and carborundum react.
21. the manufacture method of interface transition layer composite construction according to claim 10 is characterized in that, the annealing of high temperature alloy described in the step 11, be to use high-temperature annealing furnace, adopt the high temperature alloy technology to anneal, wherein, annealing temperature is between 800 ℃-1000 ℃, time 2-10 minute.
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| CN104393031A (en) * | 2014-11-21 | 2015-03-04 | 中国科学院微电子研究所 | Insert layer composite structure and manufacturing method thereof |
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