CN102929051B - A kind of Anti-static liquid crystal display screen and manufacture method thereof - Google Patents
A kind of Anti-static liquid crystal display screen and manufacture method thereof Download PDFInfo
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Abstract
The embodiment of the present invention provides a kind of Anti-static liquid crystal display screen and manufacture method thereof, and LCDs includes: multiple pixel cells, regularly arranged with on column direction in the row direction；And, a plurality of data lines, the multiple pixel cells on every string are to there being two data line, and are alternately electrically connected in two data line corresponding to this row pixel cell with the multiple pixel cells on string；Also include: be provided with multiple antistatic between two adjacent data line and puncture structure。Owing to being provided with the first via and the second via on the first data wire, active layer, data wire metal layer and gate metal layer is made to define thin film transistor (TFT) (TFT) switch, when there being bigger electrostatic charge to be formed, TFT switch can be opened and by active layer, the electrostatic charge on the first data wire is imported adjacent data wire discharge；Again owing to anti-ESD structure is arranged in effective viewing area rather than bezel locations place, hence help to reduce the volume of LCDs。
Description
Technical field
The present invention relates to liquid crystal display screen technology, particularly relate to a kind of Anti-static liquid crystal display screen and manufacture method thereof。
Background technology
Manufacturing in the process of liquid crystal panel, electrostatic can cause much bad generation, so the design that the antistatic of display panels punctures (ESD, electrostaticdischarge) structure is critically important。Anti-ESD circuit is typically designed the periphery at effective viewing area (ActiveArea), and occupies certain space。Current narrow frame, the panel of ultra-narrow frame becomes the main flow of liquid crystal display product, and due to the feature of narrow edge frame product, require that effective viewing area is only small to the space of face plate edge, as shown in Figure 1, it is effective viewing area for housing the region of picture element matrix, region between effective viewing area and liquid crystal display screen frame is frame region, each pixel cell adopts thin film transistor (TFT) 8 to be connected on data wire and scanning line, existing antistatic punctures (ESD) structure 7 and is arranged on the frame region of liquid crystal display screen, this can cause design narrow frame liquid crystal display screen can excessively difficulty。
Summary of the invention
The technical problem to be solved in the present invention is to provide and a kind of designs that antistatic punctures the method for structure, antistatic punctures structure and liquid crystal display screen, for solving in prior art, antistatic punctures the structure of (ESD) and is arranged on the frame region of liquid crystal display screen, the defect that the volume of the liquid crystal display screen of finished product is excessive。
The embodiment of the present invention provides a kind of Anti-static liquid crystal display screen, and described LCDs includes: multiple pixel cells, regularly arranged with on column direction in the row direction；And, a plurality of data lines, the multiple pixel cells on every string are to there being two data line, and are alternately electrically connected in two data line corresponding to this row pixel cell with the multiple pixel cells on string；Also include: be provided with multiple antistatic between two adjacent data line and puncture structure。
In described Anti-static liquid crystal display screen, it is thin film transistor (TFT) that described antistatic punctures structure, one of the source electrode and drain electrode of this thin film transistor (TFT) and grid are connected in described two adjacent data line, and described source electrode and another in drain electrode are connected to another in described two adjacent data line。
In described Anti-static liquid crystal display screen, the adjacent region between two data line is provided with gate metal layer, gate metal layer contacts with the first insulating barrier, first insulating barrier contacts with active layer, and the data wire metal layer of described active layer and the first data wire and the data wire metal layer of the second data wire all contact；Being provided with the first via on first data wire, this first via is deeply to the data wire metal layer of the first data wire；First data wire is provided with the second via, through second insulating barrier of this second via, data wire metal layer, active layer and the first insulating barrier, until described gate metal layer；Form the first TFT switch of the first data wire。
In described Anti-static liquid crystal display screen, described antistatic punctures structure and also includes transparent electrode layer, and described transparent electrode layer is connected with described first data wire by the first via, and is connected with described gate metal layer by the second via。
In described Anti-static liquid crystal display screen, it is provided above the second insulating barrier at described data wire metal layer and described active layer, and in described second via, between described data wire metal layer and described transparent electrode layer, is filled with described second insulating barrier。
In described Anti-static liquid crystal display screen, it is provided above the second insulating barrier at described data wire metal layer and described active layer, and in the second via, described transparent electrode layer directly contacts with data wire metal layer。
The manufacture method of a kind of Anti-static liquid crystal display screen, described LCDs includes: multiple pixel cells, regularly arranged with on column direction in the row direction；And, a plurality of data lines, the multiple pixel cells on every string are to there being two data line, and with one be alternately electrically connected in two data line corresponding to this row pixel cell of the multiple pixel cells on string；Described method includes: adopts in the region between the mask mode two data line between two adjacent row pixel cells and arranges gate metal layer, gate metal layer contacts with the first insulating barrier, first insulating barrier contacts with active layer, and the data wire metal layer of described active layer and the first data wire and the data wire metal layer of the second data wire all contact；Arranging the first via on the first data wire, this first via is deeply to the data wire metal layer of the first data wire；First data wire arranges the second via, through second insulating barrier of this second via, data wire metal layer, active layer and the first insulating barrier, until described gate metal layer, it is provided above the second insulating barrier at described data wire metal layer and described active layer；A part for described gate metal layer, described first data wire a part on and described first via and the second via in transparent electrode layer is set。
In described method, mask mode includes semipermeable membrane masking process or single slit mask technique。
In described method, described second via is filled described second insulating barrier。
Having the beneficial effect that of the technique scheme of the present invention: owing to being provided with the first via and the second via on the first data wire, active layer, data wire metal layer and gate metal layer is made to define thin film transistor (TFT) (TFT) switch, when there being bigger electrostatic charge to be formed, TFT switch can be opened and by active layer, the electrostatic charge on the first data wire is imported adjacent data wire discharge；Again owing to anti-ESD structure is arranged in effective viewing area rather than bezel locations place, hence help to reduce the volume of LCDs。
Accompanying drawing explanation
Fig. 1 represents that existing antistatic punctures the structural representation of structure；
Fig. 2 represents that the antistatic of the present invention punctures structure schematic layout pattern in LCDs；
Fig. 3 represents that antistatic punctures structural plan schematic diagram；
Fig. 4 represents that antistatic punctures the cross-sectional schematic of the structure A-A ' line along Fig. 3 respectively；
Fig. 5 represents that antistatic punctures the cross-sectional schematic of the structure B-B ' line along Fig. 3 respectively；
1 gate metal layer
2 first insulating barriers
3 active layers
4 data wire metal layers
5 second insulating barriers
6 transparent electrode layers
7 antistatics puncture structure
8 thin film transistor (TFT)s
9 first vias
10 second vias。
Detailed description of the invention
For making the technical problem to be solved in the present invention, technical scheme and advantage clearly, it is described in detail below in conjunction with the accompanying drawings and the specific embodiments。
In the LCDs of 1 scanning line 2 data wire (1G2D) drive pattern, scanning line (GateLine) can control two row pixels simultaneously, and the quantity of data wire (DataLine) is the twice of general mode。
In the embodiment of the present invention, devising the anti-ESD structure based on 1G2D drive pattern, this anti-ESD structure is arranged between two adjacent data wires。
As shown in Figure 2, in LCDs, multiple pixel cells are regularly arranged with on column direction in the row direction, and, a plurality of data lines, each data line electrically connects with the multiple pixel cells being positioned on same string, and all have a data line to electrically connect with multiple pixel cells of these row with the both sides of the multiple pixel cells on string, the region at picture element matrix place is effective viewing area, Ze Shi neighboring area, region between shell and the frame of picture element matrix and liquid crystal display screen, wherein, the region between effective viewing area and liquid crystal display screen frame is frame region。
The embodiment of the present invention provides a kind of Anti-static liquid crystal display screen, as in figure 2 it is shown, LCDs includes: multiple pixel cells, regularly arranged with on column direction in the row direction；And, a plurality of data lines, the multiple pixel cells on every string are to there being two data line, and are alternately electrically connected in two data line corresponding to this row pixel cell with the multiple pixel cells on string；
Also include:
It is provided with multiple antistatic between two adjacent data line and punctures structure。
The technology that application provides, as shown in Figure 3, in two data line, first data wire is provided with the first via 9 and the second via 10, active layer 3, data wire metal layer 4 is made to define the first TFT switch with gate metal layer 1, when there being bigger electrostatic charge to be formed, the first TFT switch can be opened and by active layer 3, the electrostatic charge on first data wire is imported adjacent data wire and discharge；Again owing to anti-ESD structure is between two adjacent data wires rather than bezel locations place, hence help to reduce the volume of LCDs。
As shown in Figure 4 and Figure 5, in the first TFT switch, grid is positioned at gate metal layer 1, and source electrode is positioned at the first data wire, and drain electrode is then positioned at active layer 3。
In a preferred embodiment, as shown in Figure 3, it is thin film transistor (TFT) that antistatic punctures structure, one of the source electrode and drain electrode of this thin film transistor (TFT) and grid are connected in described two adjacent data line, and described source electrode and another in drain electrode are connected to another in described two adjacent data line。
Specifically, in two adjacent data line, source electrode and the first data wire are connected, drain electrode is connected with the second data wire, grid is connected with the first data wire by the first via 9 and the second via 10。
When there being more electrostatic charge to be formed on the first data wire, the first data wire is by the first via 9 and the second via 10 and gate short conducting, and the first data wire and grid define equipotential；Now, between grid and active layer 3, there is voltage difference, open raceway groove；Electrostatic charge on first data wire flows into the second data wire by raceway groove, and so, the electrostatic charge on the first data wire obtains release, protects the first data wire。
In a preferred embodiment, as shown in Figure 4 and Figure 5, the adjacent region between two data line is provided with gate metal layer 1, gate metal layer 1 contacts with the first insulating barrier 2, first insulating barrier 2 contacts with active layer 3, and described active layer 3 all contacts with the data wire metal layer 4 of the first data wire and the data wire metal layer 4 of the second data wire；
Being provided with the first via 9 on first data wire, this first via 9 is deeply to the data wire metal layer 4 of the first data wire；
First data wire is provided with the second via 10, through second insulating barrier 5 of this second via 10, data wire metal layer 4, active layer 3 and the first insulating barrier 2, until described gate metal layer 1；Form the first TFT switch of the first data wire。
In the first TFT switch formed, its source electrode is positioned at the first data wire, and drain electrode is then positioned at active layer 3, except needing to lay gate metal layer 1 between two adjacent data line with except forming grid, source electrode and drain electrode realize by means of existing Rotating fields, it is not necessary to increase extra processing step。
In a preferred embodiment, as shown in Figure 4 and Figure 5, antistatic punctures structure and also includes transparent electrode layer 6, and described transparent electrode layer 6 is connected with described first data wire by the first via 9, and is connected with described gate metal layer 1 by the second via 10。
In a preferred embodiment, as shown in Figure 4, it is provided above the second insulating barrier 5 at described data wire metal layer 4 and described active layer, and in described second via 10, between described data wire metal layer 4 and described transparent electrode layer 6, is filled with described second insulating barrier 5。
In an application scenarios, when there being more electrostatic charge to be formed on the first data wire, the first data wire is by the first via 9 and the second via 10 and gate metal layer 1 short circuit conducting, and the first data wire and gate metal layer 1 define equipotential；
Now, between gate metal layer 1 and active layer 3, there is voltage difference, open raceway groove；
Electrostatic charge on first data wire flows into the second data wire by raceway groove, and so, the electrostatic charge on the first data wire obtains release, protects the first data wire。
In a preferred embodiment, as shown in Figure 4 and Figure 5, it is provided above the second insulating barrier 5 at described data wire metal layer 4 and described active layer 3, and in the second via 10, described transparent electrode layer 6 directly contacts with data wire metal layer 4。Owing to the effect of the first via 9 and the second via 10 is in that to realize the equipotential between data wire metal layer 4 and gate metal layer 1, therefore, the second via directly contacts to have no effect on data wire metal layer 4 and realizes this function。
In like manner, being that the second data wire arranges electrostatic prevention structure, this electrostatic prevention structure is identical with the electrostatic prevention structure arranged for the first data wire, including:
Step a, adopts mask mode to arrange another gate metal layer in the effective viewing area that two adjacent data line are corresponding, gate metal layer 1 electric insulation in this another gate metal layer and the first TFT switch。This another gate metal layer contacts with the first insulating barrier 2, and the first insulating barrier 2 contacts with active layer 3, and active layer 3 all contacts with the data wire metal layer 4 of the data wire metal layer 4 belonging to the first data wire and the second data wire；
Step b, arranges via A on the second data wire, and this via A is deeply to the data wire metal layer 4 of the second data wire；
Step c, arranges via B on the second data wire, through second insulating barrier 5 of this via B, data wire metal layer 4, active layer 3 and the first insulating barrier 2, until another gate metal layer described；Form the second TFT switch of the second data wire。
Wherein, this another gate metal layer cannot turn on gate metal layer 1, otherwise the first data wire, the second data wire turn on same gate metal layer either directly through the transparent electrode layer 6 on via, namely turn on either directly through wire between the first data wire and the second data wire, then cannot ensure and data signal is normally provided。
In an application scenarios, including:
When there being more electrostatic charge to be formed on the second data wire, the second data wire is by via A and via B and another gate metal layer short circuit described conducting, and the second data wire and another gate metal layer described define equipotential；
Now, between another gate metal layer and active layer 3, there is voltage difference, open raceway groove；
Electrostatic charge on second data wire flows into the first data wire by raceway groove, and electrostatic charge obtains release, protects the second data wire。
In a preferred embodiment, as in figure 2 it is shown, the multiple positions on the first data wire are arranged in correspondence with multiple first TFT switch and the second TFT switch。
So, when there being bigger electrostatic charge to be formed on the first data wire, multiple first TFT switch all can be opened and by active layer 3, the electrostatic charge on first data wire is imported the second adjacent data wire discharge, to protect the first data wire。Based on identical operation principle, multiple 2nd TFT protect the second data wire。
Present invention also offers the manufacture method of a kind of Anti-static liquid crystal display screen, LCDs includes: multiple pixel cells, regularly arranged with on column direction in the row direction；And, a plurality of data lines, the multiple pixel cells on every string are to there being two data line, and with one be alternately electrically connected in two data line corresponding to this row pixel cell of the multiple pixel cells on string；
Described method includes:
Adopt in the region between the mask mode two data line between two adjacent row pixel cells and gate metal layer 1 is set, gate metal layer 1 contacts with the first insulating barrier 2, first insulating barrier 2 contacts with active layer 3, and described active layer 3 all contacts with the data wire metal layer 4 of the first data wire and the data wire metal layer 4 of the second data wire；
Arranging the first via 9 on the first data wire, this first via 9 is deeply to the data wire metal layer 4 of the first data wire；
First data wire arranges the second via 10, through second insulating barrier 5 of this second via 10, data wire metal layer 4, active layer 3 and the first insulating barrier 2, until described gate metal layer 1, it is provided above the second insulating barrier 5 at described data wire metal layer 4 and described active layer 3；
A part for described gate metal layer 1, described first data wire a part on and described first via 9 and the second via 10 in transparent electrode layer 6 is set。
The technology that application provides, in two data line, first data wire is provided with the first via 9 and the second via 10, active layer 3, data wire metal layer 4 is made to define the first TFT switch with gate metal layer 1, when there being bigger electrostatic charge to be formed, the first TFT switch can be opened and by active layer 3, the electrostatic charge on first data wire is imported adjacent data wire discharge；Again owing to anti-ESD structure is between two adjacent data wires, rather than bezel locations place, hence help to reduce the volume of LCDs。
In a preferred embodiment, mask mode includes semipermeable membrane masking process (HTM, HalfToneMask) or single slit mask technique (SSM, SingleSlitMask)。
Semipermeable membrane masking process and slit mask technique, be all the photosensitive thickness controlling photoresist by controlling the luminous flux of mask plate。As it is shown on figure 3, after forming gate metal layer 1 and insulating barrier 5, then it is sequentially depositing active layer 3 and data wire metal level 4, by semipermeable membrane or slit mask technique, form the channel region of TFT。
In a preferred embodiment, described second via 10 is filled described second insulating barrier 5。In other words, in the process of through second insulating barrier 5 of the second via 10, active layer 3 and the first insulating barrier 2, the transparent electrode layer 6 of described second via 10 does not directly contact with described data wire metal layer 4。
Or, in a preferred embodiment, through second insulating barrier 5 of described second via 10, active layer 3 and the first insulating barrier 2。Second via 10 directly contacts with data wire metal layer 4。Owing to the effect of the first via 9 and the second via 10 is in that to realize the equipotential between data wire metal layer 4 and gate metal layer 1, therefore, the second via 10 directly contacts to have no effect on data wire metal layer 4 and realizes this function。
In an application scenarios, make in the process of Anti-static liquid crystal display screen, including:
Step 1, as shown in Figure 3, adopt mask mode that one gate metal layer 1 is set in the effective viewing area that two adjacent data line are corresponding, gate metal layer 1 contacts with the first insulating barrier 2, first insulating barrier 2 contacts with active layer 3, and described active layer 3 all contacts with the data wire metal layer 4 of the first data wire and the data wire metal layer 4 of the second data wire；
Step 2, arranges the first via 9 on the first data wire, and this first via 9 is deeply to the data wire metal layer 4 of the first data wire；
Step 3, arranges the second via 10 on the first data wire, through second insulating barrier 5 of this second via 10, data wire metal layer 4, active layer 3 and the first insulating barrier 2, until described gate metal layer 1；Form the first TFT switch of the first data wire。
Active layer 3 all can be had below all data wire metal layers 4, and the above of channel region active layer 3 does not have data wire metal layer 4, this is because, if the first data wire, the second data wire directly turn on, namely turn on either directly through data wire metal layer 4 between first, second data wire, then cannot ensure normally provides data signal。
The technical scheme that application provides, first data wire is provided with the first via 9 and the second via 10, active layer 3, data wire metal layer 4 is made to define the first TFT switch with gate metal layer 1, when there being bigger electrostatic charge to be formed on the first data wire, TFT switch can be opened and by active layer 3, the electrostatic on first data wire is imported adjacent data wire discharge；It is arranged in again effective viewing area rather than bezel locations place due to anti-ESD structure, is therefore preventing ESD's to concurrently facilitate the volume reducing LCDs。In like manner, the second data wire arranges via A and via B so that active layer 3, data wire metal layer 4 define the second TFT switch with another gate metal layer, protect the second data wire based on identical operation principle。
The above is the preferred embodiment of the present invention; it should be pointed out that, for those skilled in the art, under the premise without departing from principle of the present invention; can also making some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention。
Claims (7)
1. an Anti-static liquid crystal display screen, described LCDs includes: multiple pixel cells, regularly arranged with on column direction in the row direction；And, a plurality of data lines, the multiple pixel cells on every string are to there being two data line, and are alternately electrically connected in two data line corresponding to this row pixel cell with the multiple pixel cells on string；
It is characterized in that, also include:
It is provided with multiple antistatic between two adjacent data line and punctures structure；
It is thin film transistor (TFT) that described antistatic punctures structure, one of the source electrode and drain electrode of this thin film transistor (TFT) and grid are connected in described two adjacent data line, and described source electrode and another in drain electrode are connected to another in described two adjacent data line；
The adjacent region between two data line is provided with gate metal layer, gate metal layer contacts with the first insulating barrier, first insulating barrier contacts with active layer, and the data wire metal layer of described active layer and the first data wire and the data wire metal layer of the second data wire all contact；
Being provided with the first via on first data wire, this first via is deeply to the data wire metal layer of the first data wire；
First data wire is provided with the second via, through second insulating barrier of this second via, data wire metal layer, active layer and the first insulating barrier, until described gate metal layer；Form the first TFT switch of the first data wire。
2. Anti-static liquid crystal display screen according to claim 1, it is characterised in that
Described antistatic punctures structure and also includes transparent electrode layer, and described transparent electrode layer is connected with described first data wire by the first via, and is connected with described gate metal layer by the second via。
3. Anti-static liquid crystal display screen according to claim 2, it is characterised in that
It is provided above the second insulating barrier at described data wire metal layer and described active layer, and in described second via, between described data wire metal layer and described transparent electrode layer, is filled with described second insulating barrier。
4. Anti-static liquid crystal display screen according to claim 2, it is characterised in that
It is provided above the second insulating barrier at described data wire metal layer and described active layer, and in the second via, described transparent electrode layer directly contacts with data wire metal layer。
5. a manufacture method for Anti-static liquid crystal display screen, described LCDs includes: multiple pixel cells, regularly arranged with on column direction in the row direction；And, a plurality of data lines, the multiple pixel cells on every string are to there being two data line, and are alternately electrically connected in two data line corresponding to this row pixel cell with the multiple pixel cells on string；It is characterized in that,
Described method includes:
Adopt in the region between the mask mode two data line between two adjacent row pixel cells and gate metal layer is set, gate metal layer contacts with the first insulating barrier, first insulating barrier contacts with active layer, and the data wire metal layer of described active layer and the first data wire and the data wire metal layer of the second data wire all contact；
Arranging the first via on the first data wire, this first via is deeply to the data wire metal layer of the first data wire；
First data wire arranges the second via, through second insulating barrier of this second via, data wire metal layer, active layer and the first insulating barrier, until described gate metal layer, it is provided above the second insulating barrier at described data wire metal layer and described active layer；
A part for described gate metal layer, described first data wire a part on and described first via and the second via in transparent electrode layer is set, form antistatic and puncture structure, it is thin film transistor (TFT) that described antistatic punctures structure, one of the source electrode and drain electrode of this thin film transistor (TFT) and grid are connected in the first adjacent data wire and the second data wire, and described source electrode and another in drain electrode are connected to another in the first adjacent data wire and the second data wire。
6. method according to claim 5, it is characterised in that
Mask mode includes semipermeable membrane masking process or single slit mask technique。
7. method according to claim 5, it is characterised in that
Described second via is filled described second insulating barrier。
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| CN105204257B (en) | 2015-11-05 | 2018-10-12 | 京东方科技集团股份有限公司 | A kind of ESD protection locations, array substrate, liquid crystal display panel and display device |
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