CN102925875A - Dual-mode system used for film growth and control method of dual-mode system - Google Patents

Abstract

The invention discloses a dual-mode system for film growth and a control method thereof. The dual-mode system includes a non-reactive gas source, a first reaction source, a second reaction source, a reaction chamber with a rotating stage and a control device. The control device controls the system to switch between the two reaction modes; in the first reaction mode, the control device only provides fluid communication of the two types of reaction sources to the reaction chamber; in the second reaction mode, the control device provides non-reactive gas The source and the two types of reaction sources are in fluid communication with the reaction chamber. The two types of reaction sources are separated by the non-reactive gas source along the rotation direction of the rotary stage to form independent areas spaced from each other and arranged in sequence on the surface of the rotary stage. Each reaction Independent regions formed by the source will undergo independent growth reactions. The dual-mode system realizes the in-situ conversion of the two reaction modes of MOCVD and ALD, thereby solving the contradiction between maximizing the efficiency of raw materials for deposition and optimizing the quality of deposited films.

Description

Dual-mode system for thin film growth and control method thereof

technical field

The invention relates to the technical field of film growth, in particular to a dual-mode system for film growth and a control method thereof.

Background technique

Metal Organic Chemical Vapor Deposition (MOCVD) is a widely used vapor phase epitaxy growth technology. It is a method for preparing compound semiconductor thin film single crystals, and has great advantages in preparing thin-layer heterogeneous materials, especially in growing quantum wells and superlattices. MOCVD uses organic compounds of group II and group III elements and hydrides of group V and group VI elements as source materials, and performs vapor phase epitaxy on the substrate in a thermal decomposition reaction mode to grow group III-V and group II-VI compound semiconductors and thin-layer single crystals of multicomponent solid solutions. Metal-organic compounds are mostly liquids with high vapor pressure. Hydrogen, nitrogen or inert gas is used as carrier gas, and the liquid is carried through the bubbler equipped with the liquid into the reaction chamber and the hydrides of group V and group VI (PH ₃ , AsH ₃ , NH ₃ , etc.) mixed. When they flow through the surface of the heated substrate, through the rotation of the large plate, a thin layer of reactant mixture is formed on the surface of the substrate, thermal decomposition reaction occurs on the substrate, and a compound crystal film is epitaxially formed.

MOCVD equipment is divided into two types: vertical type and horizontal type from the reaction chamber. The heating methods include high-frequency induction heating, radiation heating and resistance heating. The working air pressure is divided into normal pressure and low pressure. MOCVD system is generally composed of source supply system, gas transportation and flow control system, reaction chamber and temperature control system, tail gas treatment and safety protection alarm system, automatic operation and electronic control system, etc.

The MOCVD gas transportation and flow control system respectively controls the opening and closing of the valve, the pressure of the transportation pipeline and the reaction chamber, the flow of the carrier gas and the gas source.

The working principle of MOCVD is roughly as follows: organic compounds of group II and group III elements and hydrides of group V and VI elements are used as source materials. When the organic source is at a constant temperature, its saturated vapor pressure is constant. By controlling the flow rate of the carrier gas with a flowmeter, the amount of the organic source carried by the carrier gas passing through the organic source can be known. Multiple carrier gases transport different sources into the reaction chamber, and the source materials have been mixed with each other before reaching the substrate, and pyrolysis reaction and pre-reaction occur in the gas phase. Then it is transported to the substrate, where a chemical reaction occurs under the action of high temperature, and epitaxial growth occurs on the substrate. The by-products of the reaction are discharged through the tail gas pipeline.

The following is a brief description of the general steps of the MOCVD growth process by taking III-V compounds as an example:

1. Part of the gas mixture participating in the reaction is pyrolyzed, a homogeneous reaction occurs, and the mixture of intermediate products, pyrolysis products and unreacted gas phases is transported to the deposition area;

2. The mixture passes through the stagnant layer and diffuses to the surface of the substrate;

3. The hot surface catalyzes the decomposition of the hydride, and the group III and V elements produced by the decomposition are adsorbed by the solid surface;

4. Group III and V elements move on the solid surface, find a suitable lattice position and grow there;

5. The by-product molecules are discharged from the system through desorption and diffusion.

These processes occur instantaneously and sequentially.

Atomic layer deposition (ALD) technology takes full advantage of surface saturation reactions, inherently possesses thickness control and high stability, and is less sensitive to changes in temperature and reactant flux. The resulting films are both high-purity and high-density, flat and highly conformal, enabling good conformal coverage even for structures with aspect ratios as high as 100:1.

The basic steps of ALD are as follows: firstly, the first reactant is introduced into the reaction chamber to cause chemical adsorption on the surface of the substrate until the surface chemical adsorption reaches saturation; One reactant is blown out; a second reactant is then introduced into the reaction chamber to react with the adsorbed first reactant on the substrate; the purge gas is then introduced into the reaction chamber. The remaining reactants and reaction by-products are removed by pumping or inert gas removal. Such a reaction process is identified as a reaction cycle, and such a reaction cycle is repeated.

This results in a monolayer saturated surface of the target compound. This ALD cycle can achieve layer-by-layer growth so that precise control of the deposition thickness can be achieved.

The MOCVD system has been used for more than 20 years, and the ALD system has been used for more than ten years. In the actual material growth, both have their own characteristics and their own scope of application. At the same time, efforts are being made to combine the technical advantages of the two to merge with each other. For example, many MOCVD technology patents that incorporate ALD technology have been developed. It will have great advantages in the growth of AlGaN-based materials, which can avoid pre-reaction and reduce the generation of particles. However, the two material growth methods cannot be fully integrated.

Contents of the invention

In our material growth research, we found that AlGaN-based materials are suitable for introducing ALD technology epitaxy, but InGaN-based materials are more suitable for MOCVD technology epitaxy, but currently available material growth system growth technology is single. Therefore, it is necessary to develop a more suitable epitaxy system, which can well adapt to the epitaxy of a wider range of compound materials. The present invention proposes a dual-mode system for thin film growth and its control method. In the reaction cycle of the product, different modes can be adopted for thin film growth according to different growth needs, so as to maximize the efficiency of raw materials for deposition and deposit thin films. Quality optimized unity.

In order to solve the above problems, the present invention provides a dual-mode system for film growth, including a non-reactive gas source, a first reaction source, a second reaction source, a reaction chamber with a rotating stage and a control device, the control means for controlling said dual-mode system to alternate between a first reaction mode and a second reaction mode; in said first reaction mode, the control means provides fluid communication of the first reaction source and the second reaction source into the reaction chamber, And prevent the fluid communication of the non-reactive gas source to the reaction chamber; in the second reaction mode, the control device provides the fluid communication of the non-reactive gas source, the first reaction source and the second reaction source to the reaction chamber, the first reaction source The isolation of the non-reactive gas source from the second reaction source along the rotation direction of the rotary stage forms independent regions spaced apart from each other and arranged in sequence on the surface of the rotary stage, and independent growth reactions can occur in the independent regions formed by each reaction source.

Preferably, the above-mentioned dual-mode system also has the following characteristics:

The control device includes a control unit and a plurality of valves, and the control unit controls the opening and closing of the valves; the non-reactive gas source, the first reaction source and the second reaction source are all provided with branches communicating with the reaction chamber, so The communication between the branch and the reaction chamber is controlled by a valve.

Preferably, the above-mentioned dual-mode system also has the following characteristics:

In the second reaction mode, each source forms four or more independent regions on the surface of the rotating platform.

Preferably, the above-mentioned dual-mode system also has the following characteristics:

When each source forms four independent regions on the surface of the rotary stage, the first region is formed by the first reaction source, the second region and the third region are formed by non-reactive gas sources, and the fourth region is formed by the second reaction source, wherein The first area is connected to the fourth area and separated by the second area and the third area;

When each source forms more than four independent areas on the rotary carrier, the number of these independent areas is a multiple of four.

Preferably, the above-mentioned dual-mode system also has the following characteristics:

The first reaction mode is a MOCVD reaction mode, and the second reaction mode is an ALD reaction mode.

Preferably, the above-mentioned dual-mode system also has the following characteristics:

The first reaction source includes one or more of the following compounds: Group II or Group III or Group IV elements or compounds containing components thereof, and the second reaction source includes one or more of the following compounds: Group IV or Group V or VI elements or compounds containing components thereof; or,

The first reaction source includes one or more of the following compounds: IV group or V group or VI group elements or compounds containing their components, and the second reaction source includes one or more of the following compounds: II group or III group or Group IV elements or compounds containing their components.

Preferably, the above-mentioned dual-mode system also has the following characteristics:

Both the first reaction source and the second reaction source include carrier gas.

Preferably, the above-mentioned dual-mode system also has the following characteristics:

The carrier gas is hydrogen or nitrogen or inert gas.

Preferably, the above-mentioned dual-mode system also has the following characteristics:

The non-reactive gas source includes hydrogen or nitrogen or an inert gas.

The present invention also provides a control method for a dual-mode system used for film growth. The dual-mode system selects the first reaction mode or the second reaction mode according to the needs of film growth, and the first reaction mode and the second reaction mode are realized by the control device. Conversion between reaction modes, wherein the first reaction mode is an MOCVD reaction mode, and the second reaction mode is an ALD reaction mode.

The specific implementation of the MOCVD mode is: multi-channel carrier gas carries different sources into the reaction chamber, and the reaction source quickly reaches the substrate through the high-speed rotation of the large plate. The source materials have been mixed with each other before reaching the substrate. The pyrolysis reaction and pre-reaction take place. Then it is transported to the substrate, fully mixed, a chemical reaction occurs under the action of high temperature, and epitaxial growth occurs on the substrate. The by-products of the reaction are discharged through the tail gas pipeline.

The specific implementation of the ALD mode is as follows: the inlet of the reaction chamber is divided into several areas, and the substrate is driven by the large plate to rotate at a suitable speed. chemical adsorption until the substrate surface reaches saturation; then the substrate rotates to the first purge area, and the purge gas further blows out the excess first reactant on the substrate surface; then the substrate rotates to the second reactant area, and the second The two reactants react with the first reactant adsorbed on the substrate; then the substrate rotates to the second cleaning area, and the remaining reactants and reaction by-products are removed by pumping or inert gas removal. In this way, an ALD reaction cycle is realized, and a monolayer saturated surface of the target compound can be obtained. This ALD cycle can also achieve layer-by-layer growth so that precise control of the deposition thickness can be achieved.

The present invention integrates two reaction modes of MOCVD and ALD in the thin film growth system. In the reaction cycle of the product, different modes can be adopted for atomic layer deposition according to different reaction sources, so as to achieve the maximum efficiency of deposition epitaxy and the improvement of epitaxy quality. Unite.

In addition, in the traditional ALD reactor, due to the periodic change of the air flow, by-products from the reaction are easily deposited at the outlet of the reaction chamber and in the tail gas treatment system, which puts forward higher requirements for the maintenance of the reaction chamber. It also causes certain damage to the valves and vacuum pumps of the exhaust gas treatment system, which affects the service life of these parts. Through the rotation of the rotating platform, the present invention avoids the interruption of airflow caused by timing control and keeps the total amount of airflow in the reaction chamber constant. Provides a good foundation. Therefore, the present invention solves the problem of sudden change of air flow caused by sequentially controlling the on-off of the reaction source and the carrier gas in the traditional ALD reactor.

Description of drawings

Fig. 1 is the schematic diagram of the dual-mode system of the embodiment of the present invention;

Fig. 2 is the schematic diagram of the dual-mode system of the embodiment of the present invention in the first reaction mode;

Fig. 3 is the schematic diagram of the dual-mode system of the embodiment of the present invention in the second reaction mode;

Fig. 4 is a schematic diagram of product composition for thin film growth according to an embodiment of the present invention.

Detailed ways

Embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined arbitrarily with each other.

In order to better understand the components and marks in the figure, please refer to Figure 1, first explain some components and labels in the figure, A is the mass flow controller (Mass Flow Controller), B is the fluid pipeline, and C is the connection of the pipeline. D is a non-pipe connection. In addition, the arrows in Fig. 2 and Fig. 3 indicate the fluid flow direction.

Please refer to Fig. 1, the present invention discloses a kind of dual-mode system for thin film growth, and it comprises non-reactive gas source 10, first reaction source 20, second reaction source 30, with rotating stage (not shown in the figure Out) of the reaction chamber 40 and the control device. The control device controls the dual-mode system to switch between the first reaction mode and the second reaction mode; in the first reaction mode, the control device provides the first reaction source 20 and the second reaction source 30 to the reaction chamber 40 In the fluid communication in the reaction chamber 40, and prevent the non-reactive gas source 10 to the fluid communication in the reaction chamber 40; In communication with the fluid in the reaction chamber 40, the first reaction source 20 and the second reaction source 30 are separated by the non-reactive gas source 10 along the rotation direction of the rotary stage to form independent regions spaced apart from each other and arranged in sequence on the surface of the rotary stage (As shown by the dotted lines in the reaction chamber in the figure), the independent regions formed by the reaction sources 20 and 30 will have independent growth reactions.

The control device includes a control unit and several three-way valves K1, K2, K3, and the control unit controls the opening and closing of these valves K1, K2, K3.

The non-reaction gas source 10, the first reaction source 20 and the second reaction source 30 are all provided with a branch communicating with the reaction chamber 40, and Fig. 1 is an embodiment of the present invention, in this embodiment, the non-reaction The gas source 10 can have 2 branches (i.e. fluid pipes) communicated with the reaction chamber 40, the first reaction source 20 can have 2 branches communicated with the reaction chamber 40, and the second reaction source 30 can have 3 branches connected with the reaction chamber. Chamber 40 communicates. The communication of these branches with the reaction chamber 40 is controlled by valves K1, K2, K3. Please refer to FIG. 2, in the first reaction mode, the control device controls the two branches of the first reaction source 20 to be in fluid communication with the reaction chamber 40, and the control device controls the two branches of the second reaction source 30 to communicate with the reaction chamber. 40 is in fluid communication, and the control device prevents the non-reactive gas source 10 from being in fluid communication with the reaction chamber 40 . The first reaction mode is the MOCVD reaction mode, and the first reaction source 20 and the second reaction source 30 enter the reaction chamber 40 to react according to the MOCVD reaction mode. Please refer to FIG. 3 , in the second reaction mode, the control device controls one of the branches of the first reaction source 20 to be in fluid communication with the reaction chamber 40, and the control device controls one of the branches of the second reaction source 30 to communicate with the reaction chamber 40. The chamber 40 is in fluid communication, and the control device controls the two branches of the non-reactive gas source 10 to be in fluid communication with the reaction chamber 40 . In the second reaction mode, each source 10 , 20 , 30 enters the reaction chamber 40 according to the branch and forms four or more independent regions on the rotating platform. The four independent regions, the first region is formed by the first reaction source 20, the second region and the third region are formed by the non-reactive gas source 10, and the fourth region is formed by the second reaction source 30, as shown in Figure 3 reaction chamber 40 As shown by the dotted line of the division, the first area and the fourth area are arranged opposite to each other and the second area is separated from the third area. If there are more than four independent regions, the division of the four independent regions is repeated in sequence, and the first reaction source 20 and the second reaction source 30 are separated from each other through the non-reactive gas source 10 . In general, independent regions are multiples of four. The second reaction mode is the ALD reaction mode, and the first reaction source 20 and the second reaction source 30 enter the reaction chamber 40 to react according to the ALD reaction mode.

The first reaction source 20 includes one or more Group II or Group III or Group IV elements or compounds containing components thereof, and the second reaction source 30 includes one or more Group IV or Group V or Group VI elements or Compounds that contain its constituents. Alternatively, the first reaction source 20 includes one or more Group IV or Group V or Group VI elements or compounds containing components thereof, and the second reaction source 30 includes one or more Group II or Group III or Group IV elements or Compounds that contain its constituents. Both the first reaction source 20 and the second reaction source 30 use carrier gas to transport the reaction source, and the carrier gas is hydrogen or nitrogen or an inert gas. In addition, the non-reactive gas source 10 is hydrogen or nitrogen or inert gas.

The present invention also discloses a control method for a dual-mode system, the steps of which are to select the first reaction mode or the second reaction mode according to the needs of film growth, and realize the in-situ switching between the first reaction mode and the second reaction mode by the control device. Conversion, the first reaction mode is MOCVD reaction mode, and the second reaction mode is ALD reaction mode.

Please refer to Figure 1 to Figure 4 at the same time, and the actual workflow of the dual-mode system will be described in detail below.

Preparation:

Put the sapphire substrate into the sample disk, and put the sample disk on the rotating stage of the reaction chamber, first try to rotate the rotating stage to ensure its good rotation. Next, set the growth parameters in the program, including rotation speed, growth temperature, growth time, organic source flow rate, valve opening and closing, reaction chamber pressure, carrier gas and reaction source flow, reaction chamber and source temperature, etc. , and then run the program. Taking the growth of InGaN/GaN-based MQW blue LED as an example, the thickness of the nucleation layer GaN is in the range of 20-40nm, and the temperature is 400-600 degrees Celsius. The flow rates of NH ₃ and TMGa are 0.02-0.4 mol and 20-40 μmol per minute, respectively, and V/III is 1000-10000. In the growth of low-temperature GaN, the growth rate is 100-400 nm per hour. The thickness of the buffer layer is controlled at about 15-40nm. After the growth of the low-temperature GaN buffer layer is completed, the substrate is heated to 900-1000 degrees Celsius for heat treatment. The growth conditions of the high-temperature n-GaN bulk material are as follows: the temperature is 1000-1100 degrees Celsius, and the thickness is 1-5 μm. The carrier gas is _H2 . The flow rates of NH ₃ and TMGa are respectively 0.2-3.5 mol and 100-600 μmol per minute, and V/III is 1000-10000. The growth rate is 1.5-3 μm. The n-type dopant is SiH ₄ , and its electron concentration is on the order of 10 ¹⁸ to 10 ¹⁹ cm ^-3 . InGaN/GaN MQW is used as the active region, and its thickness is 1.5-2.5nm and 5-20nm respectively. The temperature of GaN and InGaN can be controlled at 700-900 degrees Celsius and 600-800 degrees Celsius, and the V/III ratio is 2000-20000. The growth of the electron blocking layer Al _0.2 Ga _0.8 N uses H ₂ as the carrier gas, and the growth temperature is consistent with the GaN bulk material. The growth rate of high-quality AlGaN should generally be less than 0.03-0.2 μm per hour. The growth temperature of p-GaN is between 800 and 950 degrees Celsius, and the thickness is generally 100 to 500 nm.

According to our design, the ALD mode is used for the growth of Al _0.2 Ga _0.8 N, and the MOCVD mode is used for the growth of other layers. Please see Figure 4, a schematic diagram of a product with complete film growth, which includes GaN:Mg 71, Al _0.2 Ga _0.8 N 72 , InGaN/GaN MQW 73 , GaN:Si buffer 74 , Al _0.2 Ga _0.8 N 75 , Si GaN buffer layer 76 , GaN nucleation layer 77 and substrate 78 .

Growth:

The procedure is firstly the MOCVD mode. The three-way valves K1, K2, and K3 are respectively controlled by the control device, and the gas passages in the direction of point 1 are connected to each other. Then it becomes the MOCVD mode as shown in Figure 2. The first reaction source 20, the second reaction source The fluid direction of the source 30 is shown in FIG. 2 . The first reaction source 20 is a Ga source, and the second reaction source 30 is NH ₃ . The low-temperature nucleation is followed by high-temperature growth. First, the sapphire substrate was heated to 1170°C in a hydrogen atmosphere and kept for 8 minutes to obtain a clean substrate surface, then the temperature of the sapphire substrate was lowered to 500°C to grow a 25nm-thick GaN nucleation layer, and then the sapphire substrate The bottom temperature is raised to 1050° C., and SIH ₄ is added to the second reaction source 30 to grow a 2 μm thick Si-doped GaN buffer layer.

The program switches to the ALD growth mode, the three-way valves K1, K2, and K3 are respectively controlled by the control device, and the respective gas paths in the direction of point 2 are connected, then it becomes the ALD mode as shown in Figure 3, the first reaction source 20, the second The flow direction of the reaction source 30 is as shown in Figure 3, the growth is interrupted for 30 seconds, the ambient atmosphere is removed, and then the first reaction source 20 and the second reaction source 30 are opened. The first reaction source 20 is an Al source and a Ga source, and the second reaction source The source 30 is NH ₃ , and a layer of 20nm thick Al _0.2 Ga _0.8 N is grown at a high temperature of 1100°C. The reaction process of each source is that the sapphire substrate rotates to the second zone or the third zone after the reaction in the first zone, the gas of the non-reactive gas source 10 blows off the reaction residue, and then rotates to the fourth zone to continue the reaction.

The control device switches to the MOCVD growth mode again, and the three-way valves K1, K2, and K3 are respectively controlled by the control device, and the respective point 1 direction gas paths are connected, as shown in Figure 2. The growth is interrupted for 30 seconds, the ambient atmosphere is cleared, and then according to the control The order of device setup is to turn on the In source and Ga source of the first reaction source 20, the NH ₃ and SIH ₄ of the second reaction source 30, and grow a 300nm-thick Si-doped GaN buffer layer, followed by five cycles of InGaN growth. (3nm)/GaN (17nm) multiple quantum wells, the growth temperatures of GaN and InGaN are controlled at 800°C and 700°C, respectively.

The control device is switched to the ALD growth mode again, and the three-way valves K1, K2, and K3 are respectively controlled by the control device, and the respective point 2 direction gas circuits are connected, see Figure 3, the growth is interrupted for 30 seconds, the ambient atmosphere is cleared, and then the second valve is opened. Al source and Ga source of a reaction source 20, NH ₃ of a second reaction source 30, and then a 20nm AlGaN barrier layer is grown.

The control device is switched to the MOCVD growth mode again, and the three-way valves K1, K2, and K3 are respectively controlled by the control device, and the respective point 1 direction gas passages are connected, as shown in Figure 2. The growth is interrupted for 30 seconds, the ambient atmosphere is cleared, and then according to the program Turn on the first reaction source 20Ga source, the dopant source Mg source, and the second reaction source 30 NH ₃ in sequence, and grow a p-type doped GaN layer with a thickness of 200 nm at 920°C.

Finally, when the growth is over, the control device enters the protective cooling process. After the substrate temperature drops below 200 degrees, the process of the control device ends, and the slices are taken according to the operating procedures.

The present invention integrates two reaction modes of MOCVD and ALD in the thin film growth system. In the reaction cycle of the product, different modes can be adopted for thin film deposition according to different reaction needs, so as to realize the maximum efficiency of deposition epitaxy and the unity of epitaxy quality .

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Within the spirit and principles of the present invention, any modifications, equivalent replacements, improvements, etc., such as simple changes to the process parameters in the examples, shall be included within the protection scope of the present invention.

Claims (10)

1. A dual-mode system for film growth, characterized in that it comprises a non-reactive gas source, a first reaction source, a second reaction source, a reaction chamber with a rotating stage and a control device, and the control device controls The dual mode system is inter-switchable between a first reaction mode and a second reaction mode; in the first reaction mode, the control means provides fluid communication of the first reaction source and the second reaction source to the reaction chamber and prevents fluid communication of a source of non-reactive gas into the reaction chamber; in said second reaction mode, the control means provides fluid communication of the source of non-reactive gas, the first reactive source and the second reactive source into the reaction chamber, the first reactive source being connected to the second The two reaction sources are separated by the non-reactive gas source along the rotation direction of the rotary stage to form independent regions spaced apart from each other and arranged in sequence on the surface of the rotary stage. The independent regions formed by each reaction source will have independent growth reactions. 2. The dual-mode system of claim 1, wherein: The control device includes a control unit and a plurality of valves, and the control unit controls the opening and closing of the valves; the non-reactive gas source, the first reaction source and the second reaction source are all provided with branches communicating with the reaction chamber, so The communication between the branch and the reaction chamber is controlled by a valve. 3. The dual-mode system of claim 1, wherein: In the second reaction mode, each source forms four or more independent regions on the surface of the rotating platform. 4. The dual-mode system of claim 3, wherein: When each source forms four independent regions on the surface of the rotary stage, the first region is formed by the first reaction source, the second region and the third region are formed by non-reactive gas sources, and the fourth region is formed by the second reaction source, wherein The first area is connected to the fourth area and separated by the second area and the third area; When each source forms more than four independent areas on the rotary carrier, the number of these independent areas is a multiple of four. 5. The dual-mode system of claim 1, wherein: The first reaction mode is a MOCVD reaction mode, and the second reaction mode is an ALD reaction mode. 6. The dual-mode system of claim 1, wherein: The first reaction source includes one or more of the following compounds: Group II or Group III or Group IV elements or compounds containing components thereof, and the second reaction source includes one or more of the following compounds: Group IV or Group V or VI elements or compounds containing components thereof; or, The first reaction source includes one or more of the following compounds: IV group or V group or VI group elements or compounds containing their components, and the second reaction source includes one or more of the following compounds: II group or III group or Group IV elements or compounds containing their components. 7. The dual-mode system of claim 6, wherein: Both the first reaction source and the second reaction source include carrier gas. 8. The dual-mode system of claim 7, wherein: The carrier gas is hydrogen or nitrogen or inert gas. 9. The dual-mode system of claim 1, wherein: The non-reactive gas source includes hydrogen or nitrogen or an inert gas. 10. A control method for a dual-mode system for film growth as claimed in claims 1 to 9, characterized in that: the dual-mode system selects the first reaction mode or the second reaction mode according to the needs of film growth, The switching between the first reaction mode and the second reaction mode is realized by the control device, wherein the first reaction mode is an MOCVD reaction mode, and the second reaction mode is an ALD reaction mode.

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