CN102925875A - Dual-mode system used for film growth and control method of dual-mode system - Google Patents
Dual-mode system used for film growth and control method of dual-mode system Download PDFInfo
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Abstract
The invention discloses a dual-mode system used for film growth and a control method of the dual-mode system. The dual-mode system comprises a non-reaction gas source, a first reaction source, a second reaction source, a reaction chamber with a rotary carrying platform, and a control device, wherein the control device controls mutual conversion of the system between two reaction modes; in the first reaction mode, the control device only provides two reaction sources to communicate with a fluid in the reaction chamber; in the second reaction mode, the control device controls the non-reaction gas source and the two reaction sources to communicate with the fluid in the reaction chamber; the two reaction sources form mutually spaced and sequentially arranged independent regions on the surface of the rotary carrying platform along the rotating direction of the rotary carrying platform through the isolation function of the non-reaction resource; and independent growth reaction occurs in the independent region formed by each reaction source. The dual-mode system disclosed by the invention has the advantage of realizing in-situ conversion of OCVD (Oxidative Chemical Vapor Deposition) and ALD (Atomic Layer Deposition) reaction modes, thereby eliminating contradiction between the maximum efficiency of raw materials used for deposition and the quality optimization of a deposited film.
Description
Technical Field
The invention relates to the technical field of film growth, in particular to a dual-mode system for film growth and a control method thereof.
Background
Metal Organic Chemical Vapor Deposition (MOCVD), is a vapor phase epitaxial growth technology that is currently widely used. The method is a method for preparing compound semiconductor film single crystal, and has great superiority in preparing thin-layer heterogeneous materials, particularly in growing quantum wells and superlattices. MOCVD uses organic compounds of II group and III group elements and hydrides of V group and VI group elements as source materials, and carries out vapor phase epitaxy on a substrate in a thermal decomposition reaction mode to grow thin layer single crystals of III-V group and II-VI group compound semiconductors and multi-element solid solutions thereof. The metal organic compound is mostly a liquid with high vapor pressure, and is carried into the reaction chamber with the hydride (PH) of group V and VI by using hydrogen, nitrogen or inert gas as carrier gas through the bubbler containing the liquid3、AsH3、NH3Etc.) are mixed. When they flow over the surface of a heated substrate, a thin layer of a mixture of reactants is formed on the surface of the substrate by the rotation of the large plate, a thermal decomposition reaction occurs on the substrate, and a compound crystal thin film is epitaxially grown.
MOCVD equipment is divided into a vertical type and a horizontal type from a reaction chamber, the heating mode is divided into high-frequency induction heating, radiation heating and resistance heating, and the working air pressure is divided into normal pressure and low pressure. The MOCVD system generally comprises a source supply system, a gas transportation and flow control system, a reaction chamber and temperature control system, a tail gas treatment and safety protection alarm system, an automatic operation and electric control system and the like.
The MOCVD gas transport and flow control system respectively controls the opening and closing of the valve, the pressure of the transport pipeline and the reaction chamber, and the flow of the carrier gas and the gas source.
The working principle of MOCVD is roughly: organic compounds of II group and III group elements and hydrides of V group and VI group elements are used as source materials, and when the organic source is at a certain constant temperature, the saturated vapor pressure is constant. By controlling the flow rate of the carrier gas by the flow meter, the amount of the organic source carried by the carrier gas as it flows through the organic source can be known. Multiple carrier gases carry different sources into the reaction chamber, the source materials having been mixed with each other before reaching the substrate, and the pyrolysis reaction and pre-reaction occur in the gas phase. Then the substrate is transported to the position of the substrate, and chemical reaction is carried out under the action of high temperature, and epitaxial growth is carried out on the substrate. The reaction by-product is discharged through a tail gas pipeline.
The general steps of the MOCVD growth process are briefly described below using III-V compounds as examples:
1. the gas mixture which participates in the reaction is partially pyrolyzed to generate a homogeneous reaction, and the mixture of the generated intermediate product, pyrolysis product and unreacted gas phase is transported to a deposition area;
2. the mixture passes through the retention layer and diffuses to the surface of the substrate;
3. the thermal surface has a catalytic effect on hydride decomposition, and III-group and V-group elements generated by the decomposition are adsorbed by the solid phase surface;
4. the III group and V group elements move on the surface of the solid phase, find proper lattice positions and grow in the lattice positions;
5. the byproduct molecules are discharged out of the system by desorption and diffusion.
These processes occur instantaneously in sequence.
The Atomic Layer Deposition (ALD) technique makes full use of surface saturation reactions, inherently has thickness control and high stability, and is less sensitive to changes in temperature and reactant flux. The films thus obtained have both high purity and high density, are flat and have a high degree of shape retention, and achieve good shape retention coverage even for structures having aspect ratios as high as 100: 1.
The basic steps of ALD are as follows: firstly, introducing a first reactant into a reaction chamber, and enabling the first reactant to generate chemical adsorption with the surface of a substrate until the surface chemical adsorption is saturated; then introducing a scavenging gas into the reaction chamber, and further blowing out and scavenging the first reactant with the surplus substrate surface; then introducing a second reactant into the reaction chamber to react with the adsorbed first reactant on the substrate; the purge gas is then introduced into the reaction chamber. The residual reactants and reaction byproducts are removed by pumping or inert gas purging. Such a reaction process is considered to be a reaction cycle, and such a reaction cycle is repeated.
This results in a monolayer saturated surface of the target compound. Such ALD cycles can achieve layer-by-layer growth and thus precise control of the thickness of the deposit.
The MOCVD system has been used for more than twenty years, the ALD system has also been used for more than ten years, and in the actual material growth, both have characteristics, and each have its own application range, and at the same time, the technical advantages of both are fused with each other in an effort. For example, a number of MOCVD technology patents have been developed that incorporate ALD technology. The method has great advantages in the growth of AlGaN material, can avoid pre-reaction and reduce the generation of particles. However, the two material growth modes cannot be completely fused.
Disclosure of Invention
In our material growth research, it is found that AlGaN-based materials are suitable for introducing ALD technology epitaxy, but InGaN-based materials are more suitable for MOCVD technology epitaxy, but currently available material growth systems have a single growth technology. Therefore, it is necessary to develop a more suitable epitaxy system, which can be well adapted to the epitaxy of a wider range of compound materials. The invention provides a dual-mode system for film growth and a control method thereof, which can adopt different modes to carry out film growth according to different growth requirements in the reaction period of a product so as to realize the unification of the maximization of the efficiency of raw materials for deposition and the optimization of the quality of the deposited film.
In order to solve the above problems, the present invention provides a dual-mode system for thin film growth, comprising a non-reactive gas source, a first reactive source, a second reactive source, a reaction chamber with a rotary stage, and a control device, wherein the control device controls the dual-mode system to switch between a first reaction mode and a second reaction mode; in the first reaction mode, the control means provides fluid communication of the first and second reaction sources into the reaction chamber and prevents fluid communication of a source of non-reactive gas into the reaction chamber; in the second reaction mode, the control device provides a non-reaction gas source, a first reaction source and a second reaction source to be communicated with the fluid in the reaction chamber, the first reaction source and the second reaction source form independent areas which are mutually spaced and sequentially arranged on the surface of the rotating carrier through the isolation effect of the non-reaction gas source along the rotating direction of the rotating carrier, and the independent areas formed by each reaction source can generate independent growth reaction.
Preferably, the dual-mode system further has the following characteristics:
the control device comprises a control unit and a plurality of valves, and the control unit controls the valves to be opened and closed; the non-reaction gas source, the first reaction source and the second reaction source are all provided with branches communicated with the reaction chamber, and the communication between the branches and the reaction chamber is controlled by a valve.
Preferably, the dual-mode system further has the following characteristics:
in the second reaction mode, each source forms four or more independent areas on the surface of the rotary stage.
Preferably, the dual-mode system further has the following characteristics:
when the sources form four independent areas on the surface of the rotary carrying table, the first area is formed by a first reaction source, the second area and the third area are formed by non-reaction gas sources, the fourth area is formed by a second reaction source, and the first area and the fourth area are oppositely connected and are separated by the second area and the third area;
when each source forms more than four independent areas on the rotary carrier, the number of the independent areas is a multiple of four.
Preferably, the dual-mode system further has the following characteristics:
the first reaction mode is a Metal Organic Chemical Vapor Deposition (MOCVD) reaction mode, and the second reaction mode is an Atomic Layer Deposition (ALD) reaction mode.
Preferably, the dual-mode system further has the following characteristics:
the first reaction source comprises one or more of the following compounds: a group II or III or IV element or a compound containing a component thereof, the second reaction source comprising one or more of the following compounds: a group IV or V or VI element or a compound containing the same; or,
the first reaction source comprises one or more of the following compounds: a group IV or group V or group VI element or a compound containing a component thereof, the second reaction source comprising one or more of the following compounds: group II or III or IV elements or compounds containing the same.
Preferably, the dual-mode system further has the following characteristics:
the first reaction source and the second reaction source each include a carrier gas.
Preferably, the dual-mode system further has the following characteristics:
the carrier gas is hydrogen or nitrogen or inert gas.
Preferably, the dual-mode system further has the following characteristics:
the non-reactive gas source comprises hydrogen or nitrogen or an inert gas.
The invention also provides a control method of the double-mode system for the film growth, the double-mode system selects the first reaction mode or the second reaction mode according to the film growth requirement, and the control device realizes the conversion between the first reaction mode and the second reaction mode, wherein the first reaction mode is an MOCVD reaction mode, and the second reaction mode is an ALD reaction mode.
The specific implementation mode of the MOCVD mode is as follows: the multi-channel carrier gas carries different sources to be conveyed into the reaction chamber, the reaction sources quickly reach the position above the substrate through high-speed rotation of the large disc, the source materials are mixed with each other before reaching the substrate, and pyrolysis reaction and pre-reaction occur in a gas phase. Then the mixture is conveyed to the position of the substrate, fully mixed and subjected to chemical reaction under the action of high temperature, and the epitaxial growth is carried out on the substrate. The reaction by-product is discharged through a tail gas pipeline.
The specific implementation of the ALD mode is: dividing an inlet of a reaction chamber into a plurality of areas, driving a substrate to rotate at a proper rotating speed by a large disc, firstly introducing a first reactant into a designed position in the reaction chamber, and enabling the first reactant to generate chemical adsorption with the surface of the substrate at the position until the surface of the substrate is saturated; then the substrate rotates to a first cleaning area, and the cleaning gas further blows out and cleans the first reactant which is excessive on the surface of the substrate; then the substrate is rotated to a second reactant area, and the second reactant reacts with the first reactant adsorbed on the substrate; the substrate is then rotated to a second cleaning zone where the remaining reactants and reaction byproducts are cleaned by pumping or inert gas cleaning. This allows one ALD reaction cycle to be performed to obtain a monolayer saturated surface of the target compound. Such ALD cycles can also enable layer-by-layer growth so that precise control of the thickness of the deposit can be achieved.
The invention integrates two reaction modes of MOCVD and ALD in a film growth system, and can carry out atomic layer deposition in different modes according to different reaction sources in the reaction period of a product so as to achieve the maximum efficiency of deposition epitaxy and the unification of epitaxy quality.
In addition, in the conventional ALD reaction furnace, due to the periodic variation of the gas flow, byproducts caused by the reaction are easily deposited at the outlet of the reaction chamber and in the exhaust gas treatment system, which puts higher requirements on the maintenance of the reaction chamber, and causes certain damage to the valves and the vacuum pump of the exhaust gas treatment system, thereby affecting the service life of these components. According to the invention, through the rotation of the rotary carrier, the on-off of airflow caused by time sequence control is avoided well, the total amount of airflow in the reaction chamber is kept constant, the reaction can be maintained under a stable pressure condition, and a good foundation is provided for maintaining the tail gas treatment system. Therefore, the invention solves the problem of sudden change of gas flow caused by the time sequence control of the reaction source and the carrier gas of the traditional ALD reaction furnace.
Drawings
FIG. 1 is a schematic diagram of a dual mode system of an embodiment of the present invention;
FIG. 2 is a schematic diagram of a dual-mode system in a first reaction mode in accordance with an embodiment of the present invention;
FIG. 3 is a schematic diagram of a dual mode system of an embodiment of the present invention in a second reaction mode;
FIG. 4 is a schematic diagram of the composition of a film grown product according to an embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
For better understanding of components and marks in the drawings, please refer to fig. 1, wherein a is a Mass Flow Controller (Mass Flow Controller), B is a fluid pipe, C is a pipe joint, D is a non-pipe joint, and arrows in fig. 2 and 3 indicate fluid Flow directions.
Referring to FIG. 1, the present invention discloses a dual-mode system for thin film growth, which comprises a non-reactive gas source 10, a first reaction source 20, a second reaction source 30, a reaction chamber 40 with a rotary stage (not shown), and a control device. The control device controls the dual-mode system to be switched between a first reaction mode and a second reaction mode; in the first reaction mode, the control device provides fluid communication of the first reaction source 20 and the second reaction source 30 into the reaction chamber 40, and prevents fluid communication of the non-reaction gas source 10 into the reaction chamber 40; in the second reaction mode, the control device provides fluid communication between the non-reaction gas source 10, the first reaction source 20, the second reaction source 30 and the reaction chamber 40, the first reaction source 20 and the second reaction source 30 form mutually spaced and sequentially arranged independent areas (shown by dashed line division in the reaction chamber in the figure) on the surface of the rotary stage through the isolation effect of the non-reaction gas source 10 along the rotary direction of the rotary stage, and the independent areas formed by the reaction sources 20 and 30 can generate independent growth reactions.
The control device comprises a control unit and a plurality of three-way valves K1, K2 and K3, wherein the control unit controls the valves K1, K2 and K3 to be opened and closed.
The non-reactive gas source 10, the first reactive gas source 20 and the second reactive gas source 30 are all provided with branches communicated with the reaction chamber 40, fig. 1 shows an embodiment of the present invention, in which the non-reactive gas source 10 may have 2 branches (i.e. fluid pipes) communicated with the reaction chamber 40, the first reactive gas source 20 may have 2 branches communicated with the reaction chamber 40, and the second reactive gas source 30 may have 3 branches communicated with the reaction chamber 40. The communication of the branches with the reaction chamber 40 is controlled by valves K1, K2, K3. Referring to fig. 2, in the first reaction mode, the control device controls 2 branches of the first reaction source 20 to be in fluid communication with the reaction chamber 40, the control device controls 2 branches of the second reaction source 30 to be in fluid communication with the reaction chamber 40, and the control device prevents the non-reactive gas source 10 from being in fluid communication with the reaction chamber 40. The first reaction mode is an MOCVD reaction mode, and the first reaction source 20 and the second reaction source 30 enter the reaction chamber 40 to react according to the MOCVD reaction mode. Referring to fig. 3, in the second reaction mode, the control device controls 1 branch of the first reaction source 20 to be in fluid communication with the reaction chamber 40, the control device controls 1 branch of the second reaction source 30 to be in fluid communication with the reaction chamber 40, and the control device controls 2 branches of the non-reaction gas source 10 to be in fluid communication with the reaction chamber 40. In the second reaction mode, each source 10, 20, 30 enters the reaction chamber 40 as a branch and forms four or more independent areas on the rotating stage. The four separate zones, the first zone being formed by the first reactive gas source 20, the second and third zones being formed by the non-reactive gas source 10, and the fourth zone being formed by the second reactive gas source 30, as shown by the partitioned dotted lines in the reaction chamber 40 of fig. 3, wherein the first zone is disposed opposite to and separates the second zone from the third zone. If the number of the independent areas is more than four, the division of the four independent areas is repeated in sequence, and the first reaction source 20 and the second reaction source 30 are ensured to be separated from each other through the non-reaction gas source 10. In general, the independent areas are multiples of four. The second reaction mode is an ALD reaction mode, and the first reaction source 20 and the second reaction source 30 enter the reaction chamber 40 to react according to the ALD reaction mode.
The first reaction source 20 includes one or more group II or group III or group IV elements or compounds containing components thereof, and the second reaction source 30 includes one or more group IV or group V or group VI elements or compounds containing components thereof. Alternatively, the first reaction source 20 includes one or more group IV or group V or group VI elements or compounds containing components thereof, and the second reaction source 30 includes one or more group II or group III or group IV elements or compounds containing components thereof. The first reaction source 20 and the second reaction source 30 both use a carrier gas to transport the reaction sources, and the carrier gas is hydrogen or nitrogen or inert gas. In addition, the non-reactive gas source 10 is hydrogen or nitrogen or an inert gas.
The invention also discloses a control method of the dual-mode system, which comprises the steps of selecting a first reaction mode or a second reaction mode according to the growth requirement of the film, and realizing the in-situ conversion between the first reaction mode and the second reaction mode by using the control device, wherein the first reaction mode is an MOCVD reaction mode, and the second reaction mode is an ALD reaction mode.
Referring to fig. 1 to 4, the following describes the actual working flow of the dual mode system.
Preparation work:
the sapphire substrate is placed in the sample disc, the sample disc is placed on the rotating carrying platform of the reaction chamber, the rotating carrying platform is tried, and the rotating good performance of the rotating carrying platform is guaranteed. Next, the growth parameters in the program, including the rotation speed, the growth temperature, the growth time, the flow rate of the organic source, the opening and closing of the valve, the pressure of the reaction chamber, the flow rates of the carrier gas and the reaction source, and the temperatures of the reaction chamber and the source, are set, and then the program is run. Taking InGaN/GaN-based MQW blue LED as an example, the thickness of the nucleation layer GaN is within the range of 20-40 nm, and the temperature is 400-600 ℃. NH (NH)3And the flow rates of TMGa are respectively 0.02-0.4 mol and 20-40 mu mol per minute, and V/III is 1000-10000. In the growth of low-temperature GaN, the growth rate is 100-400 nm per hour. The thickness of the buffer layer is controlled to be about 15-40 nm. After the growth of the low-temperature GaN buffer layer is finished, the temperature of the substrate is increased to 900-1000 ℃ for heat treatment. The growth conditions of the high-temperature n-GaN bulk material are as follows: the temperature is 1000-1100 ℃, and the thickness is 1-5 μm. The carrier gas is H2。NH3And the flow rates of TMGa are respectively 0.2-3.5 mol and 100-600 mu mol per minute, and V/III is 1000-10000. The growth rate is 1.5-3 μm. The n-type dopant being SiH4With an electron concentration of the order of magnitude of 1018～1019cm-3In the meantime. InGaN/GaN MQW is used as an active region, the thicknesses of the InGaN/GaN MQW are respectively 1.5-2.5 nm and 5-20 nm, the temperatures of GaN and InGaN can be respectively controlled at 700-900 ℃ and 600-800 ℃, and the V/III ratio is 2000-20000. Electron blocking layer Al0.2Ga0.8H for N growth2Used as carrier gas, and the growth temperature is consistent with that of the GaN material. The growth rate of high quality AlGaN should be generally less than 0.03 to 0.2 μm per hour. The growth temperature of the p-GaN is between 800 and 950 ℃, and the thickness of the p-GaN is generally 100 to 500 nm.
According to our design, in Al0.2Ga0.8The growth of N is carried out in ALD mode, the growth of other layers is carried out in MOCVD mode, see FIG. 4, a schematic diagram of a product with complete film growth, the product comprises GaN, Mg 71 and Al0.2Ga0.8N 72、InGaN/GaN MQW 73、GaN:Si buffer 74、Al0.2Ga0.8N75, Si GaN buffer layer 76, GaN nucleation layer 77, and substrate 78.
And (3) growing:
the program is the MOCVD mode, the three-way valves K1, K2, and K3 are controlled by the control device, respectively, and the gas circuits in the point 1 direction are connected, so as to achieve the MOCVD mode as shown in fig. 2, the fluid directions of the first reaction source 20 and the second reaction source 30 are shown in fig. 2, the first reaction source 20 is a Ga source, and the second reaction source 30 is an NH source3Firstly, low-temperature nucleation and then high-temperature growth are carried out. First, the sapphire substrate was heated to 1170 ℃ in a hydrogen atmosphere and maintained for 8 minutes to obtain a clean substrate surface, then the sapphire substrate temperature was lowered to 500 ℃ to grow a 25nm thick GaN nucleation layer, and then the sapphire substrate temperature was raised to 1050 ℃, and SIH was added to the second reaction source 304And growing a 2 mu m thick Si-doped GaN buffer layer.
The program is switched to the ALD growth mode, the three-way valves K1, K2, and K3 are controlled by the control device respectively, the gas circuits in the dot 2 direction are connected, the ALD mode shown in fig. 3 is achieved, the fluid directions of the first reaction source 20 and the second reaction source 30 are shown in fig. 3, the growth is interrupted for 30 seconds, the ambient atmosphere is purged, the first reaction source 20 and the second reaction source 30 are opened, the first reaction source 20 is an Al source and a Ga source, and the second reaction source 30 is NH source3Growing a layer of Al with the thickness of 20nm at the high temperature of 1100 DEG C0.2Ga0.8And N is added. The reaction process of each source is that the sapphire substrate rotates to the second area or the third area after reacting in the first area, the gas of the non-reaction gas source 10 blows away the reaction residue, and then rotates to the fourth area for continuous reaction.
The control device is switched to the MOCVD growth mode again, and the three-way valves K1, K2 and K3 are respectively communicatedControlling by the control device, connecting the gas circuits In the respective point 1 directions, please see FIG. 2, interrupting the growth for 30 seconds, removing the ambient atmosphere, and opening the In source and Ga source of the first reaction source 20 and NH of the second reaction source 30 according to the sequence set by the control device3And SIH4A300 nm thick Si-doped GaN buffer layer was grown, followed by 5 cycles of InGaN (3 nm)/GaN (17 nm) multiple quantum wells, with the growth temperatures of GaN and InGaN controlled at 800 deg.C and 700 deg.C, respectively.
The control device is switched to the ALD growth mode again, the three-way valves K1, K2, and K3 are controlled by the control device respectively, the gas circuits in the respective dot 2 directions are connected, please see fig. 3, the growth is interrupted for 30 seconds, the ambient atmosphere is removed, the Al source and the Ga source of the first reaction source 20 and the NH source of the second reaction source 30 are opened3And thereafter a 20nm AlGaN barrier layer is grown.
The control device is switched to the MOCVD growth mode again, the three-way valves K1, K2 and K3 are controlled by the control device respectively, the gas circuits in the direction of the respective point 1 are connected, please see FIG. 2, the growth is interrupted for 30 seconds, the ambient atmosphere is removed, and then the first reaction source 20Ga source, the doping source Mg source and the NH of the second reaction source 30 are opened according to the program sequence3And growing a 200nm thick p-type doped GaN layer at 920 ℃.
And finally, after the growth is finished, the control device enters protection cooling, the flow of the control device is finished after the temperature of the substrate is reduced to be below 200 ℃, and the wafer is taken according to the operation rules.
The invention integrates two reaction modes of MOCVD and ALD in a film growth system, and can carry out film deposition in different modes according to different reaction requirements in the reaction period of a product so as to realize the maximum efficiency of deposition epitaxy and the unification of epitaxy quality.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like, which are made within the spirit and principle of the present invention, such as simple changes to the process parameters in the examples, are included in the protection scope of the present invention.
Claims (10)
1. A dual-mode system for film growth is characterized by comprising a non-reaction gas source, a first reaction source, a second reaction source, a reaction chamber with a rotary carrying platform and a control device, wherein the control device controls the dual-mode system to be switched between a first reaction mode and a second reaction mode; in the first reaction mode, the control means provides fluid communication of the first and second reaction sources into the reaction chamber and prevents fluid communication of a source of non-reactive gas into the reaction chamber; in the second reaction mode, the control device provides a non-reaction gas source, a first reaction source and a second reaction source to be communicated with the fluid in the reaction chamber, the first reaction source and the second reaction source form independent areas which are mutually spaced and sequentially arranged on the surface of the rotating carrier through the isolation effect of the non-reaction gas source along the rotating direction of the rotating carrier, and the independent areas formed by each reaction source can generate independent growth reaction.
2. The dual-mode system of claim 1,
the control device comprises a control unit and a plurality of valves, and the control unit controls the valves to be opened and closed; the non-reaction gas source, the first reaction source and the second reaction source are all provided with branches communicated with the reaction chamber, and the communication between the branches and the reaction chamber is controlled by a valve.
3. The dual-mode system of claim 1,
in the second reaction mode, each source forms four or more independent areas on the surface of the rotary stage.
4. The dual-mode system of claim 3,
when the sources form four independent areas on the surface of the rotary carrying table, the first area is formed by a first reaction source, the second area and the third area are formed by non-reaction gas sources, the fourth area is formed by a second reaction source, and the first area and the fourth area are oppositely connected and are separated by the second area and the third area;
when each source forms more than four independent areas on the rotary carrier, the number of the independent areas is a multiple of four.
5. The dual-mode system of claim 1,
the first reaction mode is a Metal Organic Chemical Vapor Deposition (MOCVD) reaction mode, and the second reaction mode is an Atomic Layer Deposition (ALD) reaction mode.
6. The dual-mode system of claim 1,
the first reaction source comprises one or more of the following compounds: a group II or III or IV element or a compound containing a component thereof, the second reaction source comprising one or more of the following compounds: a group IV or V or VI element or a compound containing the same; or,
the first reaction source comprises one or more of the following compounds: a group IV or group V or group VI element or a compound containing a component thereof, the second reaction source comprising one or more of the following compounds: group II or III or IV elements or compounds containing the same.
7. The dual-mode system of claim 6,
the first reaction source and the second reaction source each include a carrier gas.
8. The dual-mode system of claim 7,
the carrier gas is hydrogen or nitrogen or inert gas.
9. The dual-mode system of claim 1,
the non-reactive gas source comprises hydrogen or nitrogen or an inert gas.
10. A control method of a dual-mode system for thin film growth as claimed in claims 1 to 9, characterized in that: the dual-mode system selects a first reaction mode or a second reaction mode according to the requirement of film growth, and the control device realizes the conversion between the first reaction mode and the second reaction mode, wherein the first reaction mode is an MOCVD reaction mode, and the second reaction mode is an ALD reaction mode.
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| CN108642466A (en) * | 2018-05-25 | 2018-10-12 | 北京航空航天大学 | A kind of device of complex technique prepares coating |
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| US6902620B1 (en) * | 2001-12-19 | 2005-06-07 | Novellus Systems, Inc. | Atomic layer deposition systems and methods |
| CN102312217A (en) * | 2011-09-06 | 2012-01-11 | 中国科学院长春光学精密机械与物理研究所 | Method for growing semiconductor film by using composite model, and apparatus thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6902620B1 (en) * | 2001-12-19 | 2005-06-07 | Novellus Systems, Inc. | Atomic layer deposition systems and methods |
| CN102312217A (en) * | 2011-09-06 | 2012-01-11 | 中国科学院长春光学精密机械与物理研究所 | Method for growing semiconductor film by using composite model, and apparatus thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108642466A (en) * | 2018-05-25 | 2018-10-12 | 北京航空航天大学 | A kind of device of complex technique prepares coating |
| CN108642466B (en) * | 2018-05-25 | 2020-12-22 | 北京航空航天大学 | Device for preparing coating by composite technology |
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