CN102923712A - Preparation method of silylene material - Google Patents
Preparation method of silylene material Download PDFInfo
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- CN102923712A CN102923712A CN2012104706946A CN201210470694A CN102923712A CN 102923712 A CN102923712 A CN 102923712A CN 2012104706946 A CN2012104706946 A CN 2012104706946A CN 201210470694 A CN201210470694 A CN 201210470694A CN 102923712 A CN102923712 A CN 102923712A
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Abstract
The invention discloses a preparation method of a silylene material. The preparation method comprises the following steps of 1) evaporating and depositing a proper amount of silicons to a transitional metal iridium substrate; and 2) annealing the whole sample so that the silicons are interacted with each other; forming a two-dimensional orderly film-shaped structure on the surface of the substrate; and arranging silicon atoms in a hexagonal honeycomb shape, so as to form a novel two-dimensional crystal material-silylene. The novel material is similar to graphene and obtains wide application potential in the future development and research aspect of information electronics and devices.
Description
Technical field
The present invention relates to a kind of silene material preparation method, belong to technical field of nano material.
Background technology
The New Two Dimensional crystalline material becomes in recent years research focus because of the two dimensional crystal structure of its monatomic thickness and unique physical property.Step into physical size limits gradually in microtronics and face in the development bottleneck, New Two Dimensional crystalline material take Graphene as representative, their development and application is expected to break through the bottleneck problem that current large-scale integrated circuit runs into, for the research fields such as China's basic science, information science, Materials science, energy science provide a new opportunity and platform, and Sustainable development and the national defense safety aspect of national economy there is far-reaching influence.For example, a series of peculiar electronics and physical property that Graphene shows, such as high mobility, high mechanical strength, high light permeable rate, high conductivity etc., in fields such as molectronics, micro-nano device, sensor, efficient conversion battery, nesa coating, THz devices important application prospect is arranged.
Silene is another kind of novel two dimensional crystal material, the possibility that existing theoretical prophesy two dimensional crystal silene exists, and also there is the excellent properties that is similar to Graphene in prophesy.But for this brand-new two dimensional crystal material, experimentally also rest on the initial exploratory stage of research, just launch in the world.
In order to utilize the excellent specific property of silene, the preparation of high quality silene becomes most important.But, there is not laminate structure in the block materials of silicon, can't adopt the tape stripping method to separate the silene of acquisition.Therefore, seek a kind of method for preparing the high quality silene and seem particularly important.
Summary of the invention
Given this, the purpose of this invention is to provide a kind of silene material preparation method, can grow a kind of New Two Dimensional crystalline material---silene, this novel material shows as the two-dimentional membrane structure that sequential 2 D, Siliciumatom become the hexagon cellular shape to arrange.
The invention provides a kind of silene material preparation method, it is characterized in that, Siliciumatom becomes the hexagon cellular shape to arrange, and expands in two dimensional surface, and described Semiconducting Silicon Materials also can be semiconductor material germanium.
The present invention also provides a kind of preparation method of silene, and its step comprises:
1) under vacuum environment, with an amount of Semiconducting Silicon Materials hydatogenesis on the transition metal base;
2) whole sample is carried out anneal, interact with the silicon that will cover substrate surface, form the membrane structure of hexagon cellular shape distribution sequential 2 D, thereby obtain the silene material.
Above-mentioned used silicon is that the method by high temperature evaporation deposits in the transition metal substrate.
Above-mentioned transition metal substrate for the growth silene is (111) face of iridium.
Above-mentioned annealing temperature of carrying out the silene growth is 300 ℃ ~ 450 ℃, is preferably 400 ℃.
It is the superstructure of 0.72nm that above-mentioned silene has formed the cycle, and this periodicity superstructure can be scanned tunnel microscope institute and low-energy electron diffraction characterizes.
Above-mentioned Semiconducting Silicon Materials also can be semiconductor material germanium.
The present invention is by the high-quality silene of epitaxy, and Siliciumatom becomes the hexagon cellular shape to arrange, and expands in two dimensional surface, is convenient to further study electronic property and the related device exploitation of silene.
Description of drawings
Below, describe by reference to the accompanying drawings embodiment of the present invention in detail, wherein:
Fig. 1 shows whole preparation process effect schematic diagram of the present invention;
Fig. 2 shows among the present invention the scanning tunnel microscope image at the high coverage silicon grain of (111) of iridium surface deposition;
Fig. 3 shows the low-energy electron diffraction pattern of the silene that makes after 400 ℃ of anneal of sample among the present invention, comprises the diffraction spot of substrate iridium and silene;
Fig. 4 shows the scanning tunnel microscope image of the high quality silene for preparing at (111) of iridium face among the present invention;
Fig. 5 shows scanning tunnel microscope enlarged image and the corresponding atomic structure model of the high quality silene for preparing at (111) of iridium face among the present invention;
Fig. 6 a shows the 3-D view of the silene on (111) of iridium face for preparing among the present invention;
Fig. 6 b shows the 3-D view without the suspension silene of substrate for preparing among the present invention.
Embodiment
Preparation method to silene is described in further detail below in conjunction with drawings and Examples.This embodiment is only used for the usefulness that specifically describes more in detail, and should not be construed as for limiting in any form the present invention.
The present embodiment prepares high-quality silene at transiting metal surface.Concrete steps are: at first in vacuum chamber the iridium monocrystalline is carried out several times or tens argon ion sputterings, then by the iridium substrate being heated and remaining on 850 ℃, high temperature annealing obtains clean smooth (111) crystal face.Whole preparation process effect schematic diagram of the present invention as shown in Figure 1.Upper partial graph shows among the present invention the silicon grain in the high coverage of (111) of iridium surface deposition; Lower partial graph shows the silene that goes out sequential 2 D among the present invention after the sample anneal in (111) of iridium surface growth.
By electron beam evaporation source Semiconducting Silicon Materials is deposited on clean smooth iridium surface afterwards, substrate remains on room temperature.Silicon at substrate surface with the random distribution of the form of particle, shown in the scanning tunnel microscope image of Fig. 2.
To deposit the sample of silicon grain 400 ℃ of lower annealing, originally the silicon grain that was deposited on substrate surface has disappeared, and as shown in Figure 3, and has formed the superstructure that a kind of cycle is 0.72nm on the iridium surface, after this structure comes from anneal, in the sequential 2 D silicon fiml structure of sample surfaces formation.The low-energy electron diffraction pattern of Fig. 4 shows the existence of this superstructure.This cycle is the sequential 2 D silicon fiml that the superstructure of 0.72nm forms after the hexagon cellular shape of substrate surface is arranged corresponding to Siliciumatom, as shown in Figure 5.Do not considering in the substrate situation, hexagon cellular shape Atomic Arrangement can clearly show, and corresponding to the silene structure, shown in Fig. 6 a, 6b, Fig. 6 a shows the 3-D view of the silene on (111) of iridium face for preparing among the present invention; Fig. 6 b shows the 3-D view without the suspension silene of substrate for preparing among the present invention.
Although above the present invention is described in detail, yet also can under the condition that does not break away from main thought of the present invention, carry out the suitable variation of each condition.Can be understood as, the invention is not restricted to above-mentioned embodiment, and be attributed to the scope of claim, it comprises the replacement that is equal to of described each factor.For example, the substrate that is used for the growth silene among the present invention is transition metal iridium, and it can replace with ruthenium, platinum etc.; Semiconducting Silicon Materials among the present invention also can replace with other semiconductor materials beyond the silica removal, such as germanium, also can obtain the effect suitable with above-described embodiment.
Claims (6)
1. a silene material preparation method is characterized in that, comprises the steps:
1) under vacuum environment, with an amount of Semiconducting Silicon Materials hydatogenesis on the transition metal base;
2) whole sample is carried out anneal, interact with the silicon that will cover substrate surface, form the membranaceous structure of sequential 2 D that the hexagon cellular shape is arranged, thereby obtain the silene material.
2. the method for claim 1 is characterized in that, used silicon is that the method by high temperature evaporation deposits in the transition metal substrate.
3. the method for claim 1 is characterized in that, the transition metal substrate that is used for the growth silene is (111) face of iridium.
4. the method for claim 1 is characterized in that, the annealing temperature of carrying out the silene growth is 300 ℃ ~ 450 ℃.
5. the method for claim 1 is characterized in that, it is the superstructure of 0.72nm that described silene has formed the cycle, and this periodicity superstructure can be scanned tunnel microscope institute and low-energy electron diffraction characterizes.
6. the method for claim 1 is characterized in that, described Semiconducting Silicon Materials also can be semiconductor material germanium.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210470694.6A CN102923712B (en) | 2012-11-20 | 2012-11-20 | Preparation method of silylene material |
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| CN201210470694.6A CN102923712B (en) | 2012-11-20 | 2012-11-20 | Preparation method of silylene material |
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| CN102923712B CN102923712B (en) | 2014-12-24 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106554016A (en) * | 2016-10-21 | 2017-04-05 | 成都新柯力化工科技有限公司 | A kind of mechanical stripping prepares the application of the method and silylene film of silylene film |
| CN106987904A (en) * | 2017-03-23 | 2017-07-28 | 厦门圣之岛金属科技有限公司 | A kind of tin alkene material and preparation method thereof |
| CN110010460A (en) * | 2019-03-26 | 2019-07-12 | 贵阳学院 | A kind of low-dimensional materials forming method |
| CN111465279A (en) * | 2020-04-27 | 2020-07-28 | 电子科技大学 | Strong heat dissipation structure capable of being used for heat dissipation of laser television |
| CN115652260A (en) * | 2022-11-11 | 2023-01-31 | 湖南大学 | Preparation method of monatomic germanium and few-atom cluster |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102134067A (en) * | 2011-04-18 | 2011-07-27 | 北京大学 | Method for preparing single-layer graphene |
| CN102586868A (en) * | 2012-02-06 | 2012-07-18 | 中国科学院金属研究所 | Preparation method of large-size single-crystal graphene and continuous thin film thereof |
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2012
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102134067A (en) * | 2011-04-18 | 2011-07-27 | 北京大学 | Method for preparing single-layer graphene |
| CN102586868A (en) * | 2012-02-06 | 2012-07-18 | 中国科学院金属研究所 | Preparation method of large-size single-crystal graphene and continuous thin film thereof |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106554016A (en) * | 2016-10-21 | 2017-04-05 | 成都新柯力化工科技有限公司 | A kind of mechanical stripping prepares the application of the method and silylene film of silylene film |
| CN106987904A (en) * | 2017-03-23 | 2017-07-28 | 厦门圣之岛金属科技有限公司 | A kind of tin alkene material and preparation method thereof |
| CN110010460A (en) * | 2019-03-26 | 2019-07-12 | 贵阳学院 | A kind of low-dimensional materials forming method |
| CN110010460B (en) * | 2019-03-26 | 2021-03-16 | 贵阳学院 | Low-dimensional material forming method |
| CN111465279A (en) * | 2020-04-27 | 2020-07-28 | 电子科技大学 | Strong heat dissipation structure capable of being used for heat dissipation of laser television |
| CN111465279B (en) * | 2020-04-27 | 2021-05-28 | 电子科技大学 | Heat radiation structure for heat radiation of laser television |
| CN115652260A (en) * | 2022-11-11 | 2023-01-31 | 湖南大学 | Preparation method of monatomic germanium and few-atom cluster |
| CN115652260B (en) * | 2022-11-11 | 2023-05-16 | 湖南大学 | Preparation method of single-atom germanium and few-atom clusters |
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| CN102923712B (en) | 2014-12-24 |
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