CN102914950A - Dry re-stripping method for metal layer photoetching - Google Patents
Dry re-stripping method for metal layer photoetching Download PDFInfo
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- CN102914950A CN102914950A CN2011102212133A CN201110221213A CN102914950A CN 102914950 A CN102914950 A CN 102914950A CN 2011102212133 A CN2011102212133 A CN 2011102212133A CN 201110221213 A CN201110221213 A CN 201110221213A CN 102914950 A CN102914950 A CN 102914950A
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Abstract
The invention relates to a dry re-stripping method for metal layer photoetching. The dry re-stripping method for metal layer photoetching includes the steps of providing a wafer comprising a surface metal layer provided with surface photoresist; supporting the wafer by an electrostatic chuck, an ejector pin of which is raised, and allowing the wafer to contact with the electrostatic chuck only by the ejector pin; removing the photoresist by dry stripping process; and photoetching the metal layer. During dry re-stripping process, the ejector pin of the electrostatic chuck is kept raised, the temperature of the wafer is lowered, the influence of copper content of the metal layer in dry stripping process is decreased, and process quality is guaranteed. Compared with the traditional method with an added N2O treatment process, the dry re-stripping method for metal layer photoetching is cost-saving and productivity-increasing.
Description
[technical field]
The present invention relates to field of semiconductor manufacture, the dry method that the relates in particular to a kind of metal level photoetching reworking method that removes photoresist.
[background technology]
Along with the development of semiconductor technology and the raising of chip integration, it is thinner, narrower, thinner that metal interconnected lead-in wire becomes, and the distance between the metal connecting line is also more and more narrow simultaneously.The photoetching of metal level do over again (metal rework) quality of product has just been had significant impact.
Traditional flow process of doing over again is to remove photoresist by dry method, wet method, and then carries out photoetching.Remove photoresist temperature about 250 ℃ in the flow process of doing over again that dry method is removed photoresist, and this temperature processing procedure can make the copper content in the metal change (metal of standard is that 99.5% aluminium adds 0.5% copper).The change of copper content can cause the unusual of follow-up metal etch, easily produces metal residue, causes the metal latticing.
In order to address this problem, a kind of traditional method is to increase by a step N after the above-mentioned flow process of doing over again, before the next time photoetching
2The O treatment process retracts copper content in the metal normally.Understandable, increase by a step N
2The O treatment process can increase production cost.
[summary of the invention]
Based on this, be necessary to provide a kind of cost lower, can solve again in the flow process of doing over again in the metal dry method of the metal level photoetching of the reformed problem of the copper content reworking method that removes photoresist.
A kind of dry method of metal level photoetching reworking method that removes photoresist comprises the following steps: steps A, and a wafer is provided, and described wafer comprises the metal level on surface, and described layer on surface of metal is provided with photoresist; Step B supports described wafer by electrostatic chuck, and the thimble of described electrostatic chuck is in raised state, and described wafer only contacts with electrostatic chuck by described thimble; Step C uses the dry method degumming process to remove described photoresist; Step D carries out photoetching to described metal level again.
Preferably, in the described dry method degumming process temperature of described wafer is controlled at 180 to 200 degrees centigrade.
Preferably, the reacting gas of described step C comprises oxygen and nitrogen.
Preferably, the quantity of described thimble is 3.
Preferably, also comprise the step of removing the polymkeric substance of step C generation with wet method between described step C and the step D.
The dry method of the above-mentioned metal level photoetching reworking method that removes photoresist, in the dry method of doing over again is removed photoresist process, allow the thimble of electrostatic chuck keep raised state, reduced the temperature of wafer, reduce dry method and removed photoresist in the process on the impact of metallic copper content in the metal level, guaranteed processing quality.With respect to one step of traditional increase N
2The method of O treatment process provides cost savings, has improved production efficiency.
[description of drawings]
Fig. 1 is that do over again wafer in the flow process of a kind of traditional metal level is placed on schematic diagram on the electrostatic chuck;
Fig. 2 is the remove photoresist process flow diagram of reworking method of the dry method of a kind of metal level photoetching among the embodiment;
Fig. 3 is that the dry method of a kind of metal level photoetching among the embodiment is removed photoresist in the reworking method electrostatic chuck by the schematic diagram of thimble supporting wafer sheet;
Fig. 4 is the view of another angle of Fig. 3.
[embodiment]
For purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
For dry method degumming process in the flow process that suppresses to do over again on the impact of the metallic copper content in the metal level, can remove photoresist that the temperature of wafer realizes in the process by reducing dry method.Adopt higher temperature (for example wafer reaches about 250 ℃) to carry out dry method when removing photoresist, metallic copper is easily separated out from the X alloy of metal level, and that fine copper is difficult for is etched.Therefore copper is separated out before etching step, can affect etched effect, easily produces metal residue, causes the metal latticing.
In the dry method degumming process of traditional flow process of doing over again, wafer can place on the electrostatic chuck (E-chuck), and this electrostatic chuck is the equipment that is widely used in the semiconductor production process, is usually used at reaction chamber inner support wafer.Electrostatic chuck forms on the surface and keeps electrostatic charge, has attracted wafer by electrostatic charge.Fig. 1 is that do over again wafer in the flow process of a kind of traditional metal level is placed on schematic diagram on the electrostatic chuck.Understandable, this modes of emplacement can make the temperature of the temperature of wafer 10 and electrostatic chuck 20 basic identical.
Fig. 2 is the remove photoresist process flow diagram of reworking method of the dry method of a kind of metal level photoetching among the embodiment, comprises the following steps:
S210 provides a wafer, and wafer comprises the metal level on surface, and layer on surface of metal is provided with photoresist.In the present embodiment, this photoresist is for carrying out the not yet etched state of overexposure and development, and the photoetching of the metal level of wafer surface is done over again owing to quality requirements need to carry out photoetching.
S220, by electrostatic chuck supporting wafer sheet, the thimble of electrostatic chuck is in raised state, and wafer only contacts with electrostatic chuck by thimble.Fig. 3 is that the dry method of a kind of metal level photoetching among the embodiment is removed photoresist in the reworking method electrostatic chuck by the schematic diagram of thimble supporting wafer sheet.Electrostatic chuck 20 comprises thimble (lift pin) 21, by thimble 21 being set to the state of lift, makes thimble 21 from electrostatic chuck 20 interior rises, and wafer 10 is lifted.Fig. 4 is the view of another angle of Fig. 3, and in this embodiment, the quantity that is in the thimble of raised state is 3.Three thimbles 21 are triangularly arranged, and for example can be triangular arranged, so that wafer 10 is stressed more even.
By thimble 21 wafer 10 is lifted, wafer 10 is had with a certain distance from electrostatic chuck 20, wafer 10 only contacts with electrostatic chuck 20 by thimble 21 like this, contact area is very little, the temperature of electrostatic chuck 20 just is difficult to conduction to wafer 10, wafer 10 gas in the main and chamber in dry method is removed photoresist process carries out heat interchange, so the temperature of wafer 10 can be lower than classic method.
The suction that it should be noted that 20 pairs of wafers 10 of electrostatic chuck is not too big, in order to avoid damage wafer 10.Can obtain suitable parameter by the limited number of time experiment and carry out the control of suction.
S230 uses the dry method degumming process to remove photoresist.In the present embodiment, the temperature with wafer 10 in the dry method degumming process is controlled between 180～200 ℃.Because the change of the copper content of metal level is the excess Temperature (250 ℃ cause) in the process because dry method is removed photoresist mainly, therefore temperature is controlled at and can guarantees the effect of removing photoresist between 180～200 ℃, has reduced again dry method and has removed photoresist in the process on the impact of the copper content of wafer metal level.Electrostatic chuck 20 can use the electrostatic chuck with the type of having heaters, by well heater the environment in the reaction chamber in the dry method degumming process is heated, to obtain to remove photoresist preferably effect.In the present embodiment, the reacting gas of dry method degumming process comprises oxygen and nitrogen.
S240 carries out photoetching to metal level again.
Understandable; photoresist usually can react and produce organic polymer (polymer) and some (because failing gasification) and remain in wafer surface in the S230 step; therefore in other embodiments, can also comprise between step S230 and the S240 that wet method removes the step of this polymkeric substance.
The dry method of the above-mentioned metal level photoetching reworking method that removes photoresist, in the dry method of doing over again is removed photoresist process, allow the thimble of electrostatic chuck 20 keep lifting (lift) state, reduced the temperature of wafer 10, reduce dry method and removed photoresist in the process on the impact of metallic copper content in the metal level, guaranteed processing quality.With respect to one step of traditional increase N
2The method of O treatment process provides cost savings, has improved production efficiency.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (5)
1. the dry method of the metal level photoetching reworking method that removes photoresist comprises the following steps:
Steps A provides a wafer, and described wafer comprises the metal level on surface, and described layer on surface of metal is provided with photoresist;
Step B supports described wafer by electrostatic chuck, and the thimble of described electrostatic chuck is in raised state, and described wafer only contacts with electrostatic chuck by described thimble;
Step C uses the dry method degumming process to remove described photoresist;
Step D carries out photoetching to described metal level again.
2. the dry method of the metal level photoetching according to claim 1 reworking method that removes photoresist is characterized in that, the temperature with described wafer in the described dry method degumming process is controlled at 180 to 200 degrees centigrade.
3. the dry method of the metal level photoetching according to claim 1 reworking method that removes photoresist is characterized in that, the reacting gas of described step C comprises oxygen and nitrogen.
4. the dry method of the metal level photoetching according to claim 1 reworking method that removes photoresist is characterized in that, the quantity of described thimble is 3.
5. the dry method of the metal level photoetching according to claim 1 reworking method that removes photoresist is characterized in that, also comprises the step of removing the polymkeric substance that step C produces with wet method between described step C and the step D.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104779180A (en) * | 2014-01-14 | 2015-07-15 | 中芯国际集成电路制造(上海)有限公司 | Photoresist cleaning chamber and method for removing residual photoresist on ultra-thick metal layer |
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| CN1221809A (en) * | 1997-11-14 | 1999-07-07 | 西门子公司 | Method of etching aluminum-based layer |
| CN1457104A (en) * | 2003-03-21 | 2003-11-19 | 天津大学 | Silicon photoelectric detector passivating method |
| CN101211751A (en) * | 2006-12-28 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | Dry method etching method |
| CN101308765A (en) * | 2007-05-15 | 2008-11-19 | 中芯国际集成电路制造(上海)有限公司 | Etching method of metal wire |
| CN101866823A (en) * | 2009-04-16 | 2010-10-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing equipment and method for placing workpieces to be processed on static chuck thereof |
| CN101899715A (en) * | 2009-05-25 | 2010-12-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing device and thimble lifting device thereof |
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2011
- 2011-08-03 CN CN201110221213.3A patent/CN102914950B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1221809A (en) * | 1997-11-14 | 1999-07-07 | 西门子公司 | Method of etching aluminum-based layer |
| CN1457104A (en) * | 2003-03-21 | 2003-11-19 | 天津大学 | Silicon photoelectric detector passivating method |
| CN101211751A (en) * | 2006-12-28 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | Dry method etching method |
| CN101308765A (en) * | 2007-05-15 | 2008-11-19 | 中芯国际集成电路制造(上海)有限公司 | Etching method of metal wire |
| CN101866823A (en) * | 2009-04-16 | 2010-10-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing equipment and method for placing workpieces to be processed on static chuck thereof |
| CN101899715A (en) * | 2009-05-25 | 2010-12-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing device and thimble lifting device thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104779180A (en) * | 2014-01-14 | 2015-07-15 | 中芯国际集成电路制造(上海)有限公司 | Photoresist cleaning chamber and method for removing residual photoresist on ultra-thick metal layer |
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