CN102914139B - Drying wafer equipment and forming method thereof - Google Patents
Drying wafer equipment and forming method thereof Download PDFInfo
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- CN102914139B CN102914139B CN201210402058.XA CN201210402058A CN102914139B CN 102914139 B CN102914139 B CN 102914139B CN 201210402058 A CN201210402058 A CN 201210402058A CN 102914139 B CN102914139 B CN 102914139B
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Abstract
A kind of drying wafer equipment and forming method thereof, wherein, described drying wafer equipment, comprising: dry cavity, and the roof of described dry cavity has opening, for providing passage for taking out or put into wafer to dry cavity; Be positioned at the whirligig of described drying chamber body sidewall, described whirligig for clamping wafer High Rotation Speed, to dry the drop of crystal column surface; The baffle plate corresponding with described opening, described baffle plate comprises at the fixed dam of described opening both sides and the sideboard between two fixed dams, described sideboard take out or put into wafer to dry cavity time open, and close after putting into wafer to dry cavity, dry cavity is closed; Fixed dam near whirligig side comprises not breakable substrate layer and covers the corrosion-resistant coating on the whole surface of described substrate layer.The cost of drying wafer equipment of the present invention is low, and quality is good.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of drying wafer equipment and forming method thereof.
Background technology
In the manufacturing process of semiconductor devices, cleaning is wherein most important and one of step the most frequently.And after wafer cleaning, wafer, on the impact of subsequent technique, generally all can be put into drying equipment and carry out drying by moisture residual on wafer or remaining cleaning fluid.
Please refer to Fig. 1, the drying equipment of prior art, be generally rotary drying equipment, comprise:
Dry cavity 100, is positioned at the opening 130 of dry cavity 100 roof, provides passage for putting into dry cavity 100 for wafer;
Be positioned at the swivel head 110 of described dry cavity 100 sidewall, under duty, described swivel head 110 High Rotation Speed;
Be installed on swivel head 110, for clamping the wafer frame 120 of wafer 150, described wafer frame 120 rotates with the rotation of swivel head 110;
The baffle plate 140 corresponding with described opening 130, described baffle plate 140 is closed after wafer 150 is clamped to wafer frame 120, and dry cavity 100 is closed.
The cost of the drying wafer equipment of prior art is high, second-rate.
More associated description about drying wafer equipment, please refer to the Chinese patent that publication number is " CN201100825Y ".
Summary of the invention
The problem that the present invention solves is to provide that a kind of cost is low, the measured drying wafer equipment of matter and forming method thereof.
For solving the problem, embodiments of the invention disclose a kind of drying wafer equipment, comprising:
Dry cavity, the roof of described dry cavity has opening, for providing passage for taking out or put into wafer to dry cavity;
Be positioned at the whirligig of described drying chamber body sidewall, described whirligig for clamping wafer High Rotation Speed, to dry the drop of crystal column surface;
The baffle plate corresponding with described opening, described baffle plate comprises at the fixed dam of described opening both sides and the sideboard between two fixed dams, described sideboard take out or put into wafer to dry cavity time open, and close after putting into wafer to dry cavity, dry cavity is closed;
It is characterized in that, the fixed dam near whirligig side comprises not breakable substrate layer and covers the corrosion-resistant coating on the whole surface of described substrate layer.
Alternatively, the material of described substrate layer is stainless steel, aluminium alloy or polyimides.
Alternatively, the material of described corrosion-resistant coating is the material with not viscosity and moisture resistance.
Alternatively, the material of described corrosion-resistant coating is polytetrafluoroethylene (PTFE).
Alternatively, the thickness of described substrate layer is 4 millimeters-6 millimeters, and the thickness of described corrosion-resistant coating is 0.2 millimeter-0.6 millimeter.
Alternatively, the material of described substrate layer is polyimides, and the material of described corrosion-resistant coating is polytetrafluoroethylene (PTFE).
Alternatively, be describedly 30 degree-50 near the fixed dam of whirligig side and the angle of drying chamber body sidewall and spend.
Accordingly, inventor additionally provides a kind of formation method of above-mentioned drying wafer equipment, comprising:
Dry cavity is provided, the roof of described dry cavity has opening, and for providing passage for taking out or put into wafer to dry cavity, described drying chamber body sidewall is formed with whirligig, described whirligig for clamping wafer High Rotation Speed, to dry the drop of crystal column surface;
Form the baffle plate corresponding with described opening, described baffle plate comprises at the fixed dam of described opening both sides and the sideboard between two fixed dams, wherein, described sideboard take out or put into wafer to dry cavity time open, and close after putting into wafer to dry cavity, dry cavity is closed, and the fixed dam near whirligig side comprises not breakable substrate layer and covers the corrosion-resistant coating on the whole surface of described substrate layer.
Alternatively, the formation process of described corrosion-resistant coating is spraying coating process.
Alternatively, when forming the fixed dam near whirligig side, before formation corrosion-resistant coating, also comprise: with an organic solvent clean described substrate layer surface; To the substrate layer heating after clean, described organic solvent is volatilized completely; Adopt the mechanical system clear base sheet material layers of blasting treatment and make its surface crude.
Alternatively, described organic solvent is benzene or pentane, and temperature during described heating is 350 degrees Celsius-450 degrees Celsius.
Compared with prior art, technical scheme of the present invention has the following advantages:
The drying wafer equipment of the embodiment of the present invention, described baffle plate comprises at the fixed dam of described opening both sides and the sideboard between two fixed dams, and the fixed dam wherein near whirligig side comprises not breakable substrate layer and covers the corrosion-resistant coating on the whole surface of described substrate layer.The described fixed dam near whirligig side is not fragile in the process of transport, installation or removal, reduces the cost using this equipment.And the described whole surface of fixed dam near whirligig side has corrosion-resistant coating, and effectively prevent described fixed dam and corroded by chemicals, the cost of described drying wafer equipment is low, quality good.
Further, the Material selec-tion hydrophobic material of described corrosion-resistant coating, the steam in dry cavity not easily becomes drop at described fixed dam surfaces converge, avoids to be formed water stain in dry wafer process at crystal column surface, ensure that the carrying out of wafer subsequent technique.
Further, the described close fixed dam of whirligig side and the angle of drying chamber body sidewall are 30 degree-50 and spend, the adhesive force of fixed dam to the drop of its surfaces converge near whirligig side is less, even if drop is attached to described fixed dam surface, also can flow downward along described fixed dam surface.Avoid drop and directly drip back crystal column surface, formed at crystal column surface water stain.The better effects if of dry wafer.
Further, the technique forming corrosion-resistant coating is spraying coating process, and the thickness of the corrosion-resistant coating of formation is even, and the corrosion resistance of the drying wafer equipment of follow-up formation is good.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of the drying wafer equipment of prior art;
Fig. 2 is the cross-sectional view of the drying wafer equipment of the embodiment of the present invention.
Detailed description of the invention
As described in background, the cost of the drying wafer equipment of prior art is high, second-rate.
Through research, inventor finds, the wafer drying device of prior art, and its baffle plate adopts cost high and more breakable quartz glass is made, and baffle plate, in transport, installation or removal process, is very easily damaged the normal work affecting wafer drying device by workman.
If the baffle plate of wafer drying device is changed to not breakable material, then greatly can reduce costs, ensure the normal work of wafer drying device.After further research; inventor finds; put into the wafer of wafer drying device; usually just to take out from cleaning device; the described crystal column surface taken out from cleaning device also remains cleaning fluid; in described cleaning fluid except there is a large amount of moisture, usually also comprise hydrofluoric acid (HF).Had by remained on surface the wafer of above-mentioned cleaning fluid to put into wafer drying device, under the drive of swivel head, wafer frame clamping wafer High Rotation Speed, the cleaning fluid that crystal column surface remains is in high-speed rotation, and the impact by centrifugal force is thrown out of, and falls baffle surface.
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Please refer to Fig. 2, Fig. 2 is the cross-sectional view of the drying wafer equipment of the embodiment of the present invention, comprising:
Dry cavity 200, the roof of described dry cavity 200 has opening (sign), for providing passage for taking out or putting into wafer 250 to dry cavity 200;
Be positioned at the whirligig 210 of described dry cavity 200 sidewall, described whirligig 210 for clamping wafer 250 High Rotation Speed, to dry the drop on wafer 250 surface;
The baffle plate 220 corresponding with described opening, described baffle plate 220 comprises at the fixed dam 221,223 of described opening both sides and the sideboard 225 between two fixed dams 221,223, described sideboard 225 is in taking-up or put into wafer 250 to unlatching during dry cavity 200, and close after putting into wafer 250 to dry cavity 200, dry cavity 200 is closed;
Fixed dam 221 near whirligig 210 side comprises not breakable substrate layer 221a and covers the corrosion-resistant coating 221b on the described whole surface of substrate layer 221a.
Wherein, described dry cavity 200 is for providing place for drying wafer.Described dry cavity 200 has opening, for providing passage for taking out or putting into wafer 250 to dry cavity 200.In embodiments of the invention, adopt manipulator (not shown) clamping wafer 250 in dry cavity 200, for ease of the operation of manipulator, stop movable space to manipulator, the opening of described dry cavity 200 is positioned at the roof of described dry cavity 200.Further, described dry cavity 200 is outer is also provided with sensor (not shown), for detecting wafer 250.
Described whirligig 210 for clamping wafer 250 High Rotation Speed, to dry the drop on wafer 250 surface.Described whirligig 210 is formed primarily of two parts: the swivel head 211 being positioned at dry cavity 200 sidewall and the wafer frame 213 be installed on swivel head 211.Wherein, described swivel head 211 is electrically connected with drive motors (not shown), for rotating under the driving of drive motors; Described wafer frame 213 edge has multiple fixture (sign), such as 4-8, after placing wafer 250 to wafer frame 213, wafer 250 is fixed on wafer frame 213, subsequently, wafer 250 and wafer frame 213 rotate with the rotation of swivel head 211.For reaching good drying effect, in wafer drying process, the rotary speed of described swivel head is 1000 revs/min-3000 revs/min.
In embodiments of the invention, the shape of described wafer frame 213 is identical with the shape of wafer 250, is discoid, and the diameter of described wafer frame 213 is more than or equal to the diameter of described wafer 250, and the edge of described wafer frame 213 has equally distributed 5 fixtures.Further, for saving the space of drying wafer equipment, and make the drying effect of drying wafer equipment good, the center of described wafer frame 213 and the center superposition of described swivel head 211, the rotating speed of described swivel head 211 is 1800 revs/min.
The position of described baffle plate 220 is corresponding with the position of described opening, for opening to during the wafer frame 213 of dry cavity 200 taking out or put into wafer 250, and close after putting into wafer 250 to the wafer frame 213 of dry cavity 200, dry cavity 200 is closed, is beneficial to the work of drying wafer equipment.
In embodiments of the invention, baffle plate 220 is designed to comprise at the fixed dam 221,223 of described opening both sides and the sideboard 225 between two fixed dams 221,223, open by sideboard 225 or close, provide passage for taking out or putting into wafer 250 to dry cavity 200.Wherein, described fixed dam 223 is directly fixed on the sidewall of dry cavity, and the described positioner of sideboard 225 combines with the connecting rod of cylinder, can do opening and closing action.
Concrete, under original state, described sideboard 225 is opened.When wafer 250 is sent to dry cavity 200, sensor detects wafer 250, and then send shutdown signal to magnetic valve, under the control of magnetic valve, cylinder drive activity plate washer 225 does closing motion; After wafer 250 finishes drying action according to the time of board programming, magnetic valve receives the opening signal drying equipment from wafer 250, and under the control of magnetic valve, cylinder drive activity plate washer 225 does opening action.By above-mentioned steps, be achieved unlatching or the closedown of passage.
It should be noted that, in other embodiments of the invention, the cylinder driving sideboard 225 to open or close can be single-acting cylinder, can also be double-acting cylinder or other driving mechanism, as long as sideboard 225 can be driven to do opening and closing action, reach the object of unlatching or closing passage.
Consider the particularity of drying wafer equipment, wafer 250 for drying in drying wafer equipment, mostly firm from wafer cleaning equipment (not shown) cleaning complete, the surface of described wafer 250 also remains cleaning fluid, and the composition of described cleaning fluid is mainly water and hydrofluoric acid (HF).Wherein, hydrofluoric acid has corrosivity.Further, drying wafer equipment, in the process drying wafer 250, for avoiding the steam etc. thrown away from wafer 250 surface to become drop at baffle plate 220 surfaces converge, dripping go back to wafer 250 surface and being formed water stain, affecting the subsequent technique of wafer 250.The material require of described drying wafer equipment surface selects not viscosity and moisture resistance material, makes the steam thrown away from wafer 250 surface not easily converge formation drop on baffle plate 220 surface, and baffle plate 220 surface not moisture-sensitive.The material of described baffle plate 220 is the material of not viscosity, moisture resistance and good corrosion resistance.
The surface of quartz glass after borax process not easily forms drop, and self has corrosion resistance, is widely used in the baffle plate 140 (as shown in Figure 1) of drying wafer equipment.But, expensive due to quartz glass, and frangible, make the cost of the drying wafer equipment be made up of quartz glass high, and, drying wafer equipment of poor quality, easily damage in installation, unloading process, the drying process affecting wafer 150 (shown in Fig. 1) is affected.
Through research, inventor finds, in the embodiment of the present invention, in dry cavity 200 during swivel head 211 wafer frame 213 other devices such as grade of installation, maintenance whirligig 210, fixed dam 221 near whirligig 210 side is dismantled by usual needs, the dismounting frequency of the described fixed dam 221 near whirligig 210 side is higher, and broken risk is higher.If adopt not breakable material substitution quartz glass to form fixed dam 221, then effectively can avoid in described fixed dam 221 installation or removal process broken, affect the work of drying wafer equipment.
If described fixed dam 221 adopts common not breakable material, and do not consider the decay resistance of material, then the surface of the fixed dam 221 formed easily is corroded by hydrofluoric acid, causes some local serious depression of fixed dam 221 surface, even bore a hole, cause scrapping of fixed dam 221.The material of described fixed dam 221 is the material of corrosion resistance.Further, for avoiding the steam thrown away from wafer 250 surface to become drop at fixed dam 220 surfaces converge, dripping go back to wafer 250 surface and being formed water stain, affecting the subsequent technique of wafer 250.The material on described fixed dam 221 surface also needs to select not viscosity and moisture resistance material.
After further research, inventor finds, described fixed dam 221 can be designed to two parts, at least comprises not breakable substrate layer 221a and covers the corrosion-resistant coating 221b on the described whole surface of substrate layer 221a.Wherein, the material of described substrate layer 221a is stainless steel, aluminium alloy or polyimides, and described substrate layer 221a is in transport, installation and removal process, not easily broken, and the cost of described substrate layer 221a is low; Described corrosion-resistant coating 221b directly contacts with the steam etc. that drying wafer equipment throws away, and the Material selec-tion of described corrosion-resistant coating 221b has not viscosity and moisture resistance material.
In an embodiment of the present invention, the material of described substrate layer 221a is polyimides, and have good decay resistance, cost is low.The material of described corrosion-resistant coating 221b is polytetrafluoroethylene (PTFE) (Teflon), not easily gets wet, and corrosion-resistant.Adopt the above-mentioned material of the embodiment of the present invention, efficiently solve fixed dam 221 easily broken, problem that cost is high.And wafer 250 surface dry in the drying wafer equipment of the embodiment of the present invention does not have water stain, and the quality of dry wafer 250 is high.In addition, because the decay resistance of polyimides is better, even if the thinner thickness of corrosion-resistant coating 221b, hydrofluoric acid infiltrates substrate layer 221a surface, and substrate layer 221a also can not be corroded.Further increase the decay resistance of described fixed dam 221, and the lighter weight of fixed dam 221, be convenient to transport, dismantle and install.
For ensure fixed dam 221 there is certain intensity, meet drying wafer equipment transport, dismounting, install and work time stressed, in described fixed dam 221, the thickness of substrate layer 221a is 4 millimeters-6 millimeters.Further, for making the corrosion resistance and good of fixed dam 221, the substrate layer 221a of fixed dam 221 is not easily corroded by hydrofluoric acid, and the thickness of described corrosion-resistant coating 221b is 0.2 millimeter-0.6 millimeter.In an embodiment of the present invention, the thickness of described substrate layer 221a is 5 millimeters, and the thickness of described corrosion-resistant coating 221b is 0.3 millimeter.
It should be noted that, for better preventing the liquid chemicals thrown out from wafer 250 from becoming drop at baffle plate 220 surface aggregation, dripping go back to wafer 250 surface and being formed water stain, affecting the subsequent technique of wafer 250.Further, for increasing the bond strength between corrosion-resistant coating 221b and substrate layer 221a, the surface of described substrate layer 221a is crude.
Further, inventor finds, the fixed dam 221 near whirligig 210 side and the angle α size of dry cavity 200 sidewall, can have influence on the flow direction of the surperficial drop of fixed dam 221.When fixed dam 221 and dry cavity 200 sidewall angle α comparatively large (spending for 50 degree-70) time, the adhesive force of described fixed dam 221 to the drop formed is larger, not easily along the surperficial slide downward of fixed dam 221, on the contrary, when described drop converges comparatively greatly, gravitate very easily drips and is back to wafer 250 surface; When fixed dam 221 is less with the angle α of dry cavity 200 sidewall, described fixed dam 221 reduces the adhesive force of the drop formed, drop can flow downward along the surface of fixed dam 221, finally to discharge outlet discharge, and can not drop to wafer 250 surface.In embodiments of the invention, the described fixed dam 221 near whirligig 210 side is 40 degree with the angle of dry cavity 200 sidewall, and dry wafer 250 surface is not easily formed water stain.
It should be noted that, in other embodiments of the invention, the structure and material of described fixed dam 223 also can as fixed dam 221, and the structure and material of described sideboard 225 also can as fixed dam 221, to reduce the cost of drying wafer equipment further.Specifically please refer to the associated description about fixed dam 221 above, do not repeat them here.
It should be noted that, for making the steam in drying wafer equipment and drop discharge, dry cavity side sidewall bottom also has exhaust outlet (not shown) and osculum, for discharging steam and drop.
The drying wafer equipment of the embodiment of the present invention, because the fixed dam near whirligig side adopts not breakable material to be formed, better quality, even if often installation and removal are not fragile yet.And described fixed dam corrosion resistance by force, not viscosity and moisture resistance good, be not easily corroded, the effect of dry wafer might as well, not easily formed water stain at crystal column surface.
Accordingly, please continue to refer to Fig. 2, inventor additionally provides a kind of formation method of above-mentioned drying wafer equipment, comprising:
Dry cavity 200 is provided, the roof of described dry cavity 200 has opening (not shown), for providing passage for taking out or putting into wafer 250 to dry cavity 200, described dry cavity 200 sidewall is formed with whirligig 210, described whirligig 210 for clamping wafer 250 High Rotation Speed, to dry the drop on wafer 250 surface;
Form the baffle plate 220 corresponding with described opening, described baffle plate 220 comprises at the fixed dam 221,223 of described opening both sides and the sideboard 225 between two fixed dams 221,223, wherein, described sideboard 225 is in taking-up or put into wafer 250 to unlatching during dry cavity 200, and close after putting into wafer 250 to dry cavity 200, dry cavity 200 is closed, and the fixed dam 221 near whirligig 210 side comprises not breakable substrate layer 221a and covers the corrosion-resistant coating 221b of described substrate layer 221a.
Wherein, the material of described substrate layer 221a is not breakable material, as stainless steel, aluminium alloy or polyimides.The thickness of described substrate layer 221a is 4 millimeters-6 millimeters.In an embodiment of the present invention, the material of described substrate layer 221a is not easily by the polyimides that chemicals corrodes, for improving the corrosion resistance of described fixed dam 221 further.
The formation process of described corrosion-resistant coating 221b is spraying coating process, to form the uniform corrosion-resistant coating 221b of thickness.The thickness of the corrosion-resistant coating 221b formed is 0.2 millimeter-0.6 millimeter.The material of described corrosion-resistant coating 221b is polytetrafluoroethylene (PTFE).
It should be noted that, after the substrate layer 221a forming fixed dam 221, also comprise: coarse process is carried out to described substrate layer 221a, improve the binding ability of corrosion-resistant coating 221b with substrate layer 221a top layer.Particularly, in an embodiment of the present invention, before formation corrosion-resistant coating 221b, also comprise: with an organic solvent clean described substrate layer 221a surface; To the substrate layer 221a heating after clean, described organic solvent is volatilized completely; Adopt the mechanical system clear base sheet material layers 221a of blasting treatment and make its surface crude.Wherein, described organic solvent is benzene or pentane, and the temperature of heating is 350 degrees Celsius-450 degrees Celsius.
More descriptions about drying wafer equipment, please refer to the associated description of drying wafer equipment above, do not repeat them here.
In the embodiment of the present invention, the method forming drying wafer equipment is simple, and the thickness of the corrosion-resistant coating 221b adopting spraying coating process to be formed is even, and the corrosion resistance of described fixed dam 221 is better.
To sum up, the drying wafer equipment of the embodiment of the present invention, described baffle plate comprises at the fixed dam of described opening both sides and the sideboard between two fixed dams, and the fixed dam wherein near whirligig side comprises not breakable substrate layer and covers the corrosion-resistant coating on described substrate layer surface.The described fixed dam near whirligig side is not fragile in the process of transport, installation or removal, reduces equipment cost.And the described fixed dam surface near whirligig side has corrosion-resistant coating, and effectively prevent described fixed dam and corroded by chemicals, the cost of described drying wafer equipment is low, quality good.
Further, the Material selec-tion hydrophobic material of described corrosion-resistant coating, water vapour in dry cavity not easily becomes drop at described fixed dam surfaces converge, avoids to be formed water stain in dry wafer process at crystal column surface, ensure that the carrying out of wafer subsequent technique.
Further, the described close fixed dam of whirligig side and the angle of drying chamber body sidewall are 30 degree-50 and spend, the adhesive force of fixed dam to the drop of its surfaces converge near whirligig side is less, drop is not easily attached to described fixed dam surface, even and if drop is attached to its surface, also can flow downward along described fixed dam surface.Avoid drop and directly drip back crystal column surface, formed at crystal column surface water stain.The better effects if of dry wafer.
Further, the technique forming corrosion-resistant coating is spraying coating process, and the thickness of the corrosion-resistant coating of formation is even, and the corrosion resistance of the drying wafer equipment of follow-up formation is good.
Although the present invention with preferred embodiment openly as above; but it is not for limiting claim; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible variation and amendment, the scope that therefore protection scope of the present invention should define with the claims in the present invention is as the criterion.
Claims (11)
1. a drying wafer equipment, comprising:
Dry cavity, the roof of described dry cavity has opening, for providing passage for taking out or put into wafer to dry cavity;
Be positioned at the whirligig of described drying chamber body sidewall, described whirligig for clamping wafer High Rotation Speed, to dry the drop of crystal column surface;
The baffle plate corresponding with described opening, described baffle plate comprises at the fixed dam of described opening both sides and the sideboard between two fixed dams, described sideboard take out or put into wafer to dry cavity time open, and close after putting into wafer to dry cavity, dry cavity is closed;
It is characterized in that, the fixed dam near whirligig side comprises not breakable substrate layer and covers the corrosion-resistant coating on the whole surface of described substrate layer.
2. drying wafer equipment as claimed in claim 1, it is characterized in that, the material of described substrate layer is stainless steel, aluminium alloy or polyimides.
3. drying wafer equipment as claimed in claim 1, it is characterized in that, the material of described corrosion-resistant coating is the material with not viscosity and moisture resistance.
4. drying wafer equipment as claimed in claim 1, it is characterized in that, the material of described corrosion-resistant coating is polytetrafluoroethylene (PTFE).
5. drying wafer equipment as claimed in claim 1, it is characterized in that, the thickness of described substrate layer is 4 millimeters-6 millimeters, and the thickness of described corrosion-resistant coating is 0.2 millimeter-0.6 millimeter.
6. drying wafer equipment as claimed in claim 1, it is characterized in that, the material of described substrate layer is polyimides, and the material of described corrosion-resistant coating is polytetrafluoroethylene (PTFE).
7. drying wafer equipment as claimed in claim 1, is characterized in that, the described close fixed dam of whirligig side and the angle of drying chamber body sidewall are 30 degree-50 and spend.
8. a formation method for the drying wafer equipment in above-mentioned any one claim, is characterized in that, comprising:
Dry cavity is provided, the roof of described dry cavity has opening, and for providing passage for taking out or put into wafer to dry cavity, described drying chamber body sidewall is formed with whirligig, described whirligig for clamping wafer High Rotation Speed, to dry the drop of crystal column surface;
Form the baffle plate corresponding with described opening, described baffle plate comprises at the fixed dam of described opening both sides and the sideboard between two fixed dams, wherein, described sideboard take out or put into wafer to dry cavity time open, and close after putting into wafer to dry cavity, dry cavity is closed, and the fixed dam near whirligig side comprises not breakable substrate layer and covers the corrosion-resistant coating on the whole surface of described substrate layer.
9. the formation method of drying wafer equipment as claimed in claim 8, it is characterized in that, the formation process of described corrosion-resistant coating is spraying coating process.
10. the formation method of drying wafer equipment as claimed in claim 8, is characterized in that, when forming the fixed dam near whirligig side, before formation corrosion-resistant coating, also comprises: with an organic solvent clean described substrate layer surface; To the substrate layer heating after clean, described organic solvent is volatilized completely; Adopt the mechanical system clear base sheet material layers of blasting treatment and make its surface crude.
The formation method of 11. drying wafer equipment as claimed in claim 10, it is characterized in that, described organic solvent is benzene or pentane, and temperature during described heating is 350 degrees Celsius-450 degrees Celsius.
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| CN201210402058.XA CN102914139B (en) | 2012-10-19 | 2012-10-19 | Drying wafer equipment and forming method thereof |
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| CN201210402058.XA CN102914139B (en) | 2012-10-19 | 2012-10-19 | Drying wafer equipment and forming method thereof |
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| CN102914139B true CN102914139B (en) | 2015-12-09 |
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| CN105312184B (en) * | 2015-12-07 | 2018-05-11 | 中国科学院宁波材料技术与工程研究所 | A kind of automatic manufacturing method for workpiece polish-spray |
| CN113175790B (en) * | 2021-04-06 | 2022-09-27 | 深圳市华星光电半导体显示技术有限公司 | Substrate drying apparatus |
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| CN2465322Y (en) * | 2001-02-02 | 2001-12-12 | 集贤实业有限公司 | Improved pushing feeder for wafer drying machine |
| WO2003041131A2 (en) * | 2001-11-02 | 2003-05-15 | Applied Materials, Inc. | Single wafer dryer and drying methods |
| CN202058706U (en) * | 2011-03-31 | 2011-11-30 | 中芯国际集成电路制造(上海)有限公司 | Wafer spray rinsing drying device |
| CN102441843A (en) * | 2011-08-29 | 2012-05-09 | 上海华力微电子有限公司 | Internal cleaning structure for CMP (Chemical Mechanical Polishing) machine station and method thereof |
| CN102768972A (en) * | 2012-07-11 | 2012-11-07 | 清华大学 | Wafer drying device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2465322Y (en) * | 2001-02-02 | 2001-12-12 | 集贤实业有限公司 | Improved pushing feeder for wafer drying machine |
| WO2003041131A2 (en) * | 2001-11-02 | 2003-05-15 | Applied Materials, Inc. | Single wafer dryer and drying methods |
| CN202058706U (en) * | 2011-03-31 | 2011-11-30 | 中芯国际集成电路制造(上海)有限公司 | Wafer spray rinsing drying device |
| CN102441843A (en) * | 2011-08-29 | 2012-05-09 | 上海华力微电子有限公司 | Internal cleaning structure for CMP (Chemical Mechanical Polishing) machine station and method thereof |
| CN102768972A (en) * | 2012-07-11 | 2012-11-07 | 清华大学 | Wafer drying device |
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