CN102910572A - Etching method for releasing MEMS (Micro-electromechanical Systems) suspension bridge structure - Google Patents
Etching method for releasing MEMS (Micro-electromechanical Systems) suspension bridge structure Download PDFInfo
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- CN102910572A CN102910572A CN2011102236180A CN201110223618A CN102910572A CN 102910572 A CN102910572 A CN 102910572A CN 2011102236180 A CN2011102236180 A CN 2011102236180A CN 201110223618 A CN201110223618 A CN 201110223618A CN 102910572 A CN102910572 A CN 102910572A
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Abstract
The invention relates to an etching method for releasing an MEMS (Micro-electromechanical Systems) suspension bridge structure; and the method comprises the following steps of: first, etching a circular sheet with the MEMS suspension bridge structure by using an anisotropic etching process for alternately etching and protecting through SF6 and C4F8, so as to obtain a plurality of independent and adjacent grooves, which are substantially vertical to each other, in the circular sheet; communicating the adjacent grooves by using a SF6 and O2 mixed anisotropic etching process, so as to obtain a releasing space for the MEMS suspension bridge structure on the circular sheet. The etching method for releasing the MEMS suspension bridge structure, provided by the invention, has the advantages as follows: through the optimization of the traditional etching process and washing process, contaminant free deep silicon etching of an MEMS device with the suspension bridge structure is achieved, so that the reliability of the MEMS device is greatly enhanced and the failure rate is reduced.
Description
Technical field
The present invention relates to the lithographic method of silicon semiconductor device, relate in particular to the lithographic method of a kind of release MEMS (Micro-Electro-Mechanical Systems, microelectromechanical systems) hanging bridge structure.
Background technology
At present, in order to obtain having the bulk silicon MEMS device of hanging bridge structure, when dark silicon etching, mostly adopt the release of carrying out the MEMS structure based on the technique of Bosch technological evolution.So-called technique based on the Bosch technological evolution is exactly on the basis of the vertical etching technics of Bosch, prolongs in right amount SF
6Etch period, shorten simultaneously C
4F
8Guard time, the existing deep etching that obtains also has the dark silicon etching process of slight side direction etching.Adopt this technique, silicon substrate can be etched to one by one independently groove at the beginning, along with the increase side direction etching of time also increases, finally these independently groove link together and obtain a complete MEMS structure with hanging bridge.
Because C
4F
8Connect this technique all the time, it will produce a large amount of polymer, and these polymer are at SF
6Major part can be etched away during etching, but the polymer of working as local location is many, and SF
6Etch rate less than C
4F
8Settling rate the time, the polymer of this local location will stop SF always
6The silicon that ready-made inverted triangle shape is hanging can be gone out at the hanging bridge back side after etching body silicon, technique finish, silicon grass shape inwall can be presented in hanging bridge inside and with a large amount of silicon grains.
After etching technics, will carry out cleaning.Existing cleaning; usually can be with the BOE (abbreviation of buffer oxide etch after removing photoresist; mixed according to different proportion by hydrofluoric acid and ammonium fluoride) and EG (abbreviation of ethylene glycol, ethylene glycol) carry out rinsing, then clean with deionized water spray.BOE can rinse partial polymer, being aggregated simultaneously the silicon that thing is wrapped in also can be released, polymer will flow to the hanging bridge surface along with deionized water with the removable silicon grain of hanging bridge inside, and the silicon substrate at the hanging bridge back side will continue to be suspended on the hanging bridge back side because of the unclean part silicon grain of defective workmanship etching.Although also just say the follow-up cleaning that has, it is residual still to have a small amount of silicon grain.Because a lot of MEMS devices are all very sensitive to particle, the silicon grain of these etching residues can affect device reliability, and serious also can cause component failure.
Summary of the invention
Technical problem to be solved by this invention is, the existing lithographic method that discharges MEMS hanging bridge structure can't avoid the MEMS device by the defective of particle contaminant, the present invention aims to provide a kind of lithographic method of new release MEMS hanging bridge structure, realization to MEMS device with hanging bridge structure without staiing dark silicon etching, improve the MEMS device reliability, reduce crash rate.
In order to solve the problems of the technologies described above, technical scheme proposed by the invention is: a kind of lithographic method of the MEMS of release hanging bridge structure, and it may further comprise the steps:
Adopt first SF
6And C
4F
8Alternately the anisotropic etch process of etching and protection is carried out etching to the disk that is provided with MEMS hanging bridge structure, and then obtains some independently substantially vertical adjacent trenches at disk; Adopt again SF
6With O
2The isotropic etching technique of mixing is communicated with described adjacent trenches, thereby obtains the Free up Memory of MEMS hanging bridge structure at disk.
Further, in different embodiments, SF wherein
6With O
2Flow-rate ratio be 8: 1～12: 1.
Further, in different embodiments, SF wherein
6With O
2Flow-rate ratio be 10: 1.
Further, in different embodiments, wherein
After etch step, also to carry out cleaning step:
Use first BOE and EG mixed solvent rinsing disk; Then use surfactant washing, spray dries again; Then remove photoresist; Again use BOE and EG rinsing, use again washed with de-ionized water.
Further, in different embodiments, wherein use in the step of surfactant washing, elder generation's dilution table surface-active agent, then will be placed on through the disk of previous step up and down rinsing in the good surfactant solution of described dilution, then clean with the disk spray of deionized water after to rinsing, dry again.
Further, in different embodiments, wherein in the step of dilution table surface-active agent, surfactant is diluted to 200～500 times.
Further, in different embodiments, wherein in the step of rinsing, disk is placed in the good surfactant of dilution up and down rinsing 150～300 seconds.
Further, in different embodiments, wherein remove in the step of photoresist, adopt O
2Plasma is removed photoresist.
Compared with prior art, the invention has the beneficial effects as follows: the present invention discharges the lithographic method of MEMS hanging bridge structure, by optimizing existing etching technics and cleaning, realization to MEMS device with hanging bridge structure without staiing dark silicon etching, greatly improve the MEMS device reliability, reduce crash rate.
The specific embodiment
The below describes the specific embodiment of the present invention in detail.
The lithographic method of the release MEMS hanging bridge structure that the present invention relates to, it may further comprise the steps:
Adopt first SF
6And C
4F
8Alternately the anisotropic etch process of etching and protection is carried out etching to the disk that is provided with MEMS hanging bridge structure, and then obtains some independently substantially vertical adjacent trenches at disk; Adopt again SF
6With O
2The isotropic etching technique of mixing is communicated with described adjacent trenches, thereby obtains the Free up Memory of MEMS hanging bridge structure at disk.SF wherein
6With O
2Flow-rate ratio be 8: 1～12: 1.In the present embodiment, both flow-rate ratios are 10: 1.
In first step anisotropic etching, because logical C
4F
8The time be vertical etching always, do not have the side direction etching, so C
4F
8The polymer that produces focuses mostly at the edge of etching window; And the O that adds subsequently
2Can react with partial polymer again.Thus, C
4F
8The number of polymers that produces, SF in the time of can't hindering the second step isotropic etching
6Etch silicon, SF
6Can with groove in silicon fully react, the back side of MEMS hanging bridge structure and the inner silicon that will can not occur hanging after technique is finished, inwall and bottom are smooth without silicon grass phenomenon, and also greatly reduce because of the movably silicon grain of etching fracture generation.
Also will carry out cleaning step after the etch step:
The first step is with BOE and EG mixed solvent rinsing disk;
Second step is diluted to 200～500 times with surfactant, with the up and down rinsing 150～300 seconds in the solution for preparing of the disk after the rinsing, then cleans with the disk spray of deionized water after to rinsing, dries again;
In the 3rd step, use first O
2Plasma is removed photoresist;
The 4th step, again use BOE and EG rinsing, use again washed with de-ionized water, remove residual photoresist and on a small quantity other contamination.
Rinsing through the first step; being aggregated the silicon that thing is wrapped in also can be released; but in second step; surfactant can form on the surface of photoresist the protective layer of one deck parcel silicon grain; this protective layer can hinder silicon grain and be adsorbed on MEMS body structure surface and soluble in water; through after the cleaning that the present invention relates to, a small amount of silicon grain residual after the etching also is cleaned thus.
The Optimization Technology that application the present invention relates to carries out etching, cleaning, and disk 100% full inspection MEMS surface under 200 power microscopes is not found to stain after cleaning.
In sum, the present invention discharges the lithographic method of MEMS hanging bridge structure, the nothing that reaches MEMS by optimizing existing etching technics and cleaning is stain dark silicon etching, the silicon grain that solves dark silicon etching generation stains and causes the technical problem of MEMS component failure, thereby greatly improves device reliability, reduction crash rate.Simultaneously, the present invention also can be used for other dark silicon without staiing etching technics.
The above only is preferred embodiments of the present invention; protection scope of the present invention is not limited with above-mentioned embodiment; in every case those of ordinary skills' equivalence that disclosure is done according to the present invention is modified or is changed, and all should include in the protection domain of putting down in writing in claims.
Claims (8)
1. lithographic method that discharges MEMS hanging bridge structure, it is characterized in that: it may further comprise the steps:
Adopt first SF
6And C
4F
8Alternately the anisotropic etch process of etching and protection is carried out etching to the disk that is provided with MEMS hanging bridge structure, and then obtains some independently substantially vertical adjacent trenches at disk; Adopt again SF
6With O
2The isotropic etching technique of mixing is communicated with described adjacent trenches, thereby obtains the Free up Memory of MEMS hanging bridge structure at disk.
2. the lithographic method of release MEMS hanging bridge structure according to claim 1 is characterized in that: described SF
6With O
2Flow-rate ratio be 8: 1～12: 1.
3. the lithographic method of release MEMS hanging bridge structure according to claim 2 is characterized in that: described SF
6With O
2Flow-rate ratio be 10: 1.
4. the lithographic method of release according to claim 1 MEMS hanging bridge structure, it is characterized in that: it also includes the cleaning step that carries out after etch step:
Use first BOE and the described disk of EG mixed solvent rinsing; Then use surfactant washing, spray dries again; Then remove photoresist; Again use BOE and EG rinsing, use again washed with de-ionized water.
5. the lithographic method of release according to claim 4 MEMS hanging bridge structure, it is characterized in that: described with in the step of surfactant washing, elder generation's dilution table surface-active agent, then disk is placed on up and down rinsing in the good surfactant solution of described dilution, then clean with the disk spray of deionized water after to rinsing, dry again.
6. the lithographic method of release MEMS hanging bridge structure according to claim 5 is characterized in that: in the step of described dilution table surface-active agent, surfactant is diluted to 200～500 times.
7. the lithographic method of release according to claim 5 MEMS hanging bridge structure is characterized in that: in the step of described rinsing, disk is placed in the good surfactant of dilution up and down rinsing 150～300 seconds.
8. the lithographic method of release MEMS hanging bridge structure according to claim 4 is characterized in that: in the step of described removal photoresist, adopt O
2Plasma is removed photoresist.
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| US7555828B2 (en) * | 2002-12-02 | 2009-07-07 | Hitachi Global Storage Technologies Netherlands B.V. | Method for manufacturing a read sensor for a magnetoresistive head |
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| US20060219654A1 (en) * | 2003-04-15 | 2006-10-05 | Karola Richter | Silicon substrate comprising positive etching profiles with a defined slope angle, and production method |
| WO2005071452A1 (en) * | 2004-01-23 | 2005-08-04 | Koninklijke Philips Electronics, N.V. | Seamlessly integrated optical wave guide for light generated by a semiconductor light source |
| US7468324B2 (en) * | 2004-12-08 | 2008-12-23 | The University Court Of The University Of Edinburgh | Microelectromechanical devices and their fabrication |
| US20070093045A1 (en) * | 2005-10-26 | 2007-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
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| CN102910572B (en) | 2015-08-19 |
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