CN102903847B - P/N-type laminated resistive random access memory for growing metal nano crystal particles spontaneously - Google Patents
P/N-type laminated resistive random access memory for growing metal nano crystal particles spontaneously Download PDFInfo
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- CN102903847B CN102903847B CN201210410617.1A CN201210410617A CN102903847B CN 102903847 B CN102903847 B CN 102903847B CN 201210410617 A CN201210410617 A CN 201210410617A CN 102903847 B CN102903847 B CN 102903847B
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Abstract
The invention discloses a P/N-type laminated resistive random access memory for growing metal nano crystal particles spontaneously. The P/N-type laminated resistive random access memory for growing metal nano crystal particles spontaneously is composed of a lower electrode, an induction layer I, an induction layer II and an upper electrode which are laminated sequentially. The lower electrode is metal which is easy to be oxidized into a metal ion under the forward electric field effect; the induction layer I is an N-type oxide; the induction layer Ii is a P-type oxide; the upper electrode is a metal or electric conducting compound with stable properties under the electric field effect; the lower electrode grows metal nanocrystalline particles spontaneously in the induction layer I under the forward electric field effect, becomes a lower resistor when a reverse bias voltage is added for the lower electrode, thus the operation of data '1' storage is carried out, and becomes a high resistor when a forward or reverse bias voltage is added for the lower electrode, thus the operation of data '0' storage is carried out. The P/N-type laminated resistive random access memory for growing metal nano crystal particles spontaneously provided by the invention has the advantages that the resistive random access memory acts as an induction factor of an electric conducting channel by utilizing metal nanocrystals; and the number of formed nanocrystals is controlled through the induction layer I, so that the vibration of the voltage and current of a device can be controlled effectively and the controllability of the access memory is improved.
Description
Technical field
The present invention relates to the preparation technology of non-volatility memorizer in microelectronic component, particularly a kind of P/N type lamination resistance-variable storing device of spontaneous growing metal nano-crystalline granule.
Background technology
Development along with technology, information recording device embodies more and more consequence in life, traditional memory is being faced with the challenge of the dimension limit that is difficult to overcome as SRAM, DRAM, FLASH, meanwhile, another kind of newborn storage concept is by the developing direction-RRAM that thinks following memory device gradually.
RRAM a kind ofly represents binary novel storage theory with resistance states, have non-volatile, device cell is little, simple in structure, low in energy consumption, erasable speed is fast, can repeat erase-write cycles mainly with and with the compatible advantages of higher of traditional cmos manufacturing process, just studied widely at present.This storage theory is to excite down based on electricity, and the phenomenon that electric resistance changing can occur some material is prerequisite, by applying suitable voltage, is means, and changing present material resistance is object, finally reaches a kind of mode of storing information.
The principle of filament resistive is generation and the fracture of conductive filament.Under initial situation, in dielectric layer, there is no the existence of conductive filament, so for conductive filament is formed, need an initialized filament forming process (electroforming).According to current literature research report, the principle that filament forms be mainly oxygen room in electrode metal ion or dielectric layer in dielectric layer because electric field action moves, thereby form conductive channel, such passage capable of being is destroyed under another voltage effect.Literature research shows, will be higher than the electric field strength of flat part in the electric field strength of electrode tip boss, and therefore someone is the mode enhance device performance that adds metallic nano crystal at present.Concrete mode is between electrode layer, by electron beam evaporation, to produce the metal level of the several nanometers of one deck, then by quick thermal annealing process, form metallic nano crystal, object is can control position and the quantity that conductive channel produces by controlling quantity and the size of metallic nano crystal when there is electric resistance changing, thereby reaches the controllability to resistive.
But still have at present some problems, nanocrystalline randomness prepared by first this mode is very large, nanocrystalline quantity and size are difficult to control, and this just causes conductive channel in size, quantitative unsteadiness; Secondly, the process conditions of preparing at present metallic nano crystal are complicated, form the nanocrystalline parameter of stable metal and grasp not yet completely; Finally, the resistance-variable storing device based on conducting bridge theory or oxygen vacancy theory can reduce power consumption, particularly adds the resistance-variable storing device of metallic nano crystal further to reduce power consumption, improves erasable speed.
Summary of the invention
The object of the invention is for above-mentioned existing problems, a kind of P/N type lamination resistance-variable storing device of spontaneous growing metal nano-crystalline granule is provided, this resistance-variable storing device is the nanocrystalline resistance-variable storing device of embedded metal, can meet low-power consumption, high read or write speed, requirement that stability is good, and technique is simple, low cost of manufacture.
Technical scheme of the present invention:
A kind of P/N type lamination resistance-variable storing device of spontaneous growing metal nano-crystalline granule, utilize metallic nano crystal as the inducement of conductive channel, by bottom electrode, inducing layer I, inducing layer II and top electrode successively lamination, formed, bottom electrode for being easy to be oxidized to the metal of metal ion under positive field effect, inducing layer I is N-type oxide, inducing layer II is P type oxide, power on the very metal of stable in properties or conductive compound under electric field action, the thickness of bottom electrode, inducing layer I, inducing layer II and top electrode is respectively 5-200nm.
The described metal that is easy to be oxidized to metal ion under positive field effect is copper, silver, iron, zinc or nickel.
Described N-type oxide power is that titanium oxide or the doping quality under 50-300W, prepared are the silicon dioxide of 1-10% phosphorus.
Described P type oxide is that nickel oxide or the doping quality under 5-15% oxygen partial pressure, prepared are the silicon dioxide of 1-10% boron.
Described under electric field action the metal of stable in properties be platinum, iridium or ruthenium, conductive compound is titanium nitride or tin indium oxide.
Described bottom electrode in electric field strength, be under the positive field effect of 5-500M V/m in inducing layer I spontaneous growing metal nano-crystalline granule, thereby when bottom electrode is added to reverse back bias voltage, become the operation that low resistance is stored data " 1 ", thereby become the operation that high resistance is stored data " 0 " when bottom electrode being added to forward or backwards bias voltage.
Working mechanism of the present invention:
In the resistive device of common embedding metallic nano crystal, often with the mode of technique artificial add metallic nano crystal, the metallic particles that adds the several nano thickness of one deck in electrode or change resistance layer, then prepares metallic nano crystal particle by annealing or being oxidized the mode restoring.But nanocrystalline randomness prepared by this mode is very large, nanocrystalline quantity and size are difficult to control, and cause the unsteadiness of conductive channel in size and number, thereby cause the performance of device very unstable.Based on above consideration, the present invention adopts the laminated construction of P type and N-type, utilize metallic nano crystal as the inducement of conductive channel, on bottom electrode, add forward bias, so HuiNXing district forms the rich region of metal ion A+, owing to there being majority carrier electronics e-in N-type region, metal ion A+ and electronics generation reduction reaction are reduced into metal A, metal A enrichment becomes the nano-crystalline granule of metal A, PN junction two ends reverse biased now, the hole that has irremovable positively charged in N district and depletion region, suppress the diffusion of A+, make to grow between the non-depletion region in nano-crystalline granule Zhi N district and hearth electrode, exist the electrode of the nano-crystalline granule of metal A can significantly improve device stability and power consumption.
Beneficial effect of the present invention:
In the situation that inducing layer I is doping quality, be that the silicon dioxide of 1-10% phosphorus or N-type oxide that sputtering power is 50-300W are titanium oxide, it can effectively control electron concentration, thereby controls the quantity that nano-crystalline granule forms; In addition the distribution due to electronics is inhomogeneity, thereby the metallic nano crystal particle that the uniformity of the metallic nano crystal particle forming is prepared than common artificial additional technique is more even; After forming the nano-crystalline granule of even metal A in lower electrode surface, when bottom electrode is added to reverse back bias voltage, there is the part of nano-crystalline granule because electric field strength is enhanced, conductive channel forms conducting first here, and device is now in low resistance state; When bottom electrode being applied to the forward of another 1-10V or negative voltage, conductive channel becomes off-state, and device returns to high-impedance state, and the formation of conductive channel occurs in nanocrystalline position with disconnecting.Therefore pass through to control quantity and the diameter of metallic nano crystal, the effectively fluctuation of control device voltage and current, the controllability of raising memory.
Accompanying drawing explanation
Accompanying drawing is the spontaneous growing metal nano-crystalline granule of this resistance-variable storing device view.
In figure: 1. bottom electrode 2. inducing layer I 3. inducing layer II 4. top electrode 5. metallic nano crystal particles
Embodiment
Embodiment 1:
This resistance-variable storing device, as shown in drawings, comprises spontaneous formation metallic nano crystal particle 5 in bottom electrode 1, inducing layer I2, inducing layer II3, top electrode 4 and inducing layer I2; Bottom electrode is selected the copper metal of 50nm, and it is the silicon dioxide of 3% phosphorus that inducing layer I selects the doping quality of 100nm, and it is the silicon dioxide of 3% boron that inducing layer II selects the doping quality of 100nm; Top electrode is selected 50nm platinum.
The preparation process of this resistance-variable storing device is as follows:
1) utilize PVD (physical vapor deposition) deposition bottom electrode, it is the metallic copper that 50nm is thick;
2) utilizing PVD (physical vapor deposition) deposition inducing layer I doping quality is the silicon dioxide of 3% phosphorus, and its thickness is 100nm;
3) utilizing PVD (physical vapor deposition) deposition inducing layer II doping quality is the silicon dioxide of 3% boron, and its thickness is 100nm;
4) utilize electron beam evaporation (electron beam evaporation) deposition top electrode, it is the metal platinum that 50nm is thick.
To above-mentioned resistance-variable storing device copper electrode biasing, platinum electrode ground connection.The bias voltage that first adds 5V, accompanying drawing is the spontaneous growing metal nano-crystalline granule of this resistance-variable storing device view, due to the existence of PN junction in inducing layer I spontaneous formation metallic nano crystal particle, thereby need not artificially add metallic nano crystal particle, reduced the fluctuation that human factor causes.。Thereby then to add-5V of copper electrode bias voltage, make it become the operation that low resistance is stored data " 1 ", thereby and to copper electrode add 2V or-bias voltage of 2V makes it become the operation that high resistance is stored data " 0 ".
Embodiment 2:
This resistance-variable storing device, as shown in drawings, comprises spontaneous formation metallic nano crystal particle 5 in bottom electrode 1, inducing layer I2, inducing layer II3, top electrode 4 and inducing layer I2; Bottom electrode is selected the copper metal of 50nm, and inducing layer I selects 100nm titanium oxide, and inducing layer II selects the nickel oxide of 100nm; Top electrode is selected 50nm platinum.
The preparation process of this resistance-variable storing device is as follows:
1) utilize PVD (physical vapor deposition) deposition bottom electrode, it is the metallic copper that 50nm is thick;
2) utilize direct current magnetron sputtering process deposition inducing layer I titanium oxide, the power that technological parameter is 100W, operating pressure is 1Pa, and partial pressure of oxygen is 5%, and temperature is 300K, and its thickness is 100nm;
3) utilize direct current magnetron sputtering process deposition inducing layer II nickel oxide, the power that technological parameter is 120W, operating pressure is 1Pa, and partial pressure of oxygen is 10%, and temperature is 300K, and its thickness is 100nm;
4) utilize electron beam evaporation (electron beam evaporation) deposition top electrode, it is the metal platinum that 50nm is thick.
To above-mentioned resistance-variable storing device copper electrode biasing, platinum electrode ground connection.The bias voltage that first adds 5V, accompanying drawing is the spontaneous growing metal nano-crystalline granule of this resistance-variable storing device view, due to the existence of PN junction in inducing layer I spontaneous formation metallic nano crystal particle, thereby need not artificially add metallic nano crystal particle, reduced the fluctuation that human factor causes.。Thereby then to add-5V of copper electrode bias voltage, make it become the operation that low resistance is stored data " 1 ", thereby and to copper electrode add 2V or-bias voltage of 2V makes it become the operation that high resistance is stored data " 0 ".
This resistance-variable storing device takes full advantage of stable resistive characteristic, the high reliability of above-mentioned resistive material.Except above-described embodiment resistance-variable storing device, utilize the material of above-mentioned resistive characteristic, can also construct other device architectures.
The foregoing is only the preferred embodiment of invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (5)
1. the P/N type lamination resistance-variable storing device of a spontaneous growing metal nano-crystalline granule, by bottom electrode, inducing layer I, inducing layer II and top electrode successively lamination form, bottom electrode for being easy to be oxidized to the metal of metal ion under positive field effect, inducing layer I is N-type oxide, inducing layer II is P type oxide, the very metal of stable in properties or conductive compound under electric field action power on, bottom electrode, inducing layer I, the thickness of inducing layer II and top electrode is respectively 5-200nm, it is characterized in that: described bottom electrode in electric field strength, be under the positive field effect of 5-500M V/m in inducing layer I spontaneous growing metal nano-crystalline granule, thereby when being added to reverse biased, bottom electrode becomes the operation that low resistance is stored data " 1 ", thereby when bottom electrode being added to forward or backwards bias voltage, become the operation that high resistance is stored data " 0 ".
2. the P/N type lamination resistance-variable storing device of spontaneous growing metal nano-crystalline granule according to claim 1, is characterized in that: the described metal that is easy to be oxidized to metal ion under positive field effect is copper, silver, iron, zinc or nickel.
3. the P/N type lamination resistance-variable storing device of spontaneous growing metal nano-crystalline granule according to claim 1, is characterized in that: described N-type oxide is that titanium oxide or the doping quality that sputtering power is prepared while being 50-300W is the silicon dioxide of 1-10% phosphorus.
4. the P/N type lamination resistance-variable storing device of spontaneous growing metal nano-crystalline granule according to claim 1, is characterized in that: described P type oxide is that nickel oxide or the doping quality under 5-15% oxygen partial pressure, prepared are the silicon dioxide of 1-10% boron.
5. the P/N type lamination resistance-variable storing device of spontaneous growing metal nano-crystalline granule according to claim 1, is characterized in that: described under electric field action the metal of stable in properties be platinum, iridium or ruthenium, conductive compound is titanium nitride or tin indium oxide.
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| EP3304558A4 (en) * | 2015-06-05 | 2019-04-10 | Australian Advanced Materials Pty Ltd | A memory structure for use in resistive random access memory devices and method for use in manufacturing a data storage device |
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| TWI531100B (en) * | 2014-02-11 | 2016-04-21 | 力晶科技股份有限公司 | Resistive random access memory |
| CN103972386B (en) * | 2014-05-23 | 2017-02-08 | 中国科学院微电子研究所 | Method for preparing high-memory-density multi-value nanocrystalline memorizer |
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| CN101030622A (en) * | 2006-03-02 | 2007-09-05 | 三星电子株式会社 | Nonvolatile memory device and nonvolatile memory array including the same |
| CN102623631A (en) * | 2011-01-27 | 2012-08-01 | 中国科学院微电子研究所 | Resistance transformation type random access memory unit, memory, and preparation method |
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| KR20100101394A (en) * | 2009-03-09 | 2010-09-17 | 삼성전자주식회사 | Oxide diode, method of manufacturing the same and electronic device comprising oxide diode |
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| CN101030622A (en) * | 2006-03-02 | 2007-09-05 | 三星电子株式会社 | Nonvolatile memory device and nonvolatile memory array including the same |
| CN102623631A (en) * | 2011-01-27 | 2012-08-01 | 中国科学院微电子研究所 | Resistance transformation type random access memory unit, memory, and preparation method |
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| EP3304558A4 (en) * | 2015-06-05 | 2019-04-10 | Australian Advanced Materials Pty Ltd | A memory structure for use in resistive random access memory devices and method for use in manufacturing a data storage device |
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