CN102903847A - P/N-type laminated resistive random access memory for growing metal nano crystal particles spontaneously - Google Patents
P/N-type laminated resistive random access memory for growing metal nano crystal particles spontaneously Download PDFInfo
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Abstract
The invention discloses a P/N-type laminated resistive random access memory for growing metal nano crystal particles spontaneously. The P/N-type laminated resistive random access memory for growing metal nano crystal particles spontaneously is composed of a lower electrode, an induction layer I, an induction layer II and an upper electrode which are laminated sequentially. The lower electrode is metal which is easy to be oxidized into a metal ion under the forward electric field effect; the induction layer I is an N-type oxide; the induction layer Ii is a P-type oxide; the upper electrode is a metal or electric conducting compound with stable properties under the electric field effect; the lower electrode grows metal nanocrystalline particles spontaneously in the induction layer I under the forward electric field effect, becomes a lower resistor when a reverse bias voltage is added for the lower electrode, thus the operation of data '1' storage is carried out, and becomes a high resistor when a forward or reverse bias voltage is added for the lower electrode, thus the operation of data '0' storage is carried out. The P/N-type laminated resistive random access memory for growing metal nano crystal particles spontaneously provided by the invention has the advantages that the resistive random access memory acts as an induction factor of an electric conducting channel by utilizing metal nanocrystals; and the number of formed nanocrystals is controlled through the induction layer I, so that the vibration of the voltage and current of a device can be controlled effectively and the controllability of the access memory is improved.
Description
Technical field
The present invention relates to the preparation technology of non-volatility memorizer in the microelectronic component, particularly a kind of P/N type lamination resistance-variable storing device of spontaneous growing metal nano-crystalline granule.
Background technology
Development along with technology, information recording device embodies more and more consequence in life, traditional memory such as SRAM, DRAM, FLASH are being faced with the challenge of the dimension limit that is difficult to overcome, simultaneously, another kind of newborn storage concept is by gradually the developing direction-RRAM that thinks following memory device.
RRAM a kind ofly represents binary novel storage theory with resistance states, have non-volatile, device cell is little, speed simple in structure, low in energy consumption, erasable is fast, can repeat erase-write cycles mainly with and with the compatible advantages of higher of traditional cmos manufacturing process, just studied widely at present.This storage theory is based on electricity and excites down, and the phenomenon that electric resistance changing can occur some material is prerequisite, is means by applying suitable voltage, and changing the present material resistance is purpose, finally reaches a kind of mode of storing information.
The principle of filament resistive is generation and the fracture of conductive filament.Under initial situation, there is no the existence of conductive filament in the dielectric layer, so for conductive filament is formed, then need an initialized filament forming process (electroforming).According to present literature research report, the principle that filament forms mainly be oxygen room in electrode metal ion or the dielectric layer in dielectric layer owing to electric field action moves, thereby the formation conductive channel, such passage capable of being is destroyed under another voltage effect.Literature research shows, will be higher than the electric field strength of flat part in the electric field strength of electrode tip boss, and therefore the mode enhance device performance of artificial adding metallic nano crystal is arranged at present.Concrete mode is the metal level that produces the several nanometers of one deck between electrode layer by electron beam evaporation, then form metallic nano crystal by quick thermal annealing process, purpose is can control position and the quantity that conductive channel produces by quantity and the size of control metallic nano crystal when electric resistance changing occurs, thereby reaches the controllability to resistive.
But still have at present some problems, the nanocrystalline randomness that at first this mode prepares is very large, and nanocrystalline quantity and size are difficult to control, and this just causes conductive channel in size, quantitative unsteadiness; Secondly, the process conditions that prepare at present metallic nano crystal are complicated, form the nanocrystalline parameter of stable metal not yet on top of; At last, can reduce power consumption based on the resistance-variable storing device of conducting bridge theory or oxygen vacancy theory, the resistance-variable storing device that particularly adds metallic nano crystal can further reduce power consumption, improves erasable speed.
Summary of the invention
The objective of the invention is for above-mentioned existing problems, a kind of P/N type lamination resistance-variable storing device of spontaneous growing metal nano-crystalline granule is provided, this resistance-variable storing device is the nanocrystalline resistance-variable storing device of embedded metal, can satisfy low-power consumption, high read or write speed, requirement that stability is good, and technique is simple, low cost of manufacture.
Technical scheme of the present invention:
A kind of P/N type lamination resistance-variable storing device of spontaneous growing metal nano-crystalline granule, utilize metallic nano crystal as the inducement of conductive channel, consisted of by bottom electrode, inducing layer I, inducing layer II and top electrode successively lamination, bottom electrode is for being easy to be oxidized to the metal of metal ion under the positive field effect, inducing layer I is the N-type oxide, inducing layer II is P type oxide, power on the very metal of stable in properties or conductive compound under electric field action, the thickness of bottom electrode, inducing layer I, inducing layer II and top electrode is respectively 5-200nm.
The described metal that is easy to be oxidized to metal ion under the positive field effect is copper, silver, iron, zinc or nickel.
Described N-type oxide power is that the titanium oxide or the doping quality that prepare under the 50-300W are the silicon dioxide of 1-10% phosphorus.
Described P type oxide is that the nickel oxide or the doping quality that prepare under the 5-15% oxygen partial pressure are the silicon dioxide of 1-10% boron.
Described under electric field action the metal of stable in properties be platinum, iridium or ruthenium, conductive compound is titanium nitride or tin indium oxide.
Described bottom electrode in electric field strength be under the positive field effect of 5-500M V/m in inducing layer I spontaneous growing metal nano-crystalline granule, thereby when bottom electrode is added reverse back bias voltage, become the operation that low resistance is stored data " 1 ", thereby when bottom electrode being added forward or backwards bias voltage, become the operation that high resistance is stored data " 0 ".
Working mechanism of the present invention:
In the resistive device of common embedding metallic nano crystal, often use the artificial adding metallic nano crystal of mode of technique, the metallic particles that adds the several nano thickness of one deck in electrode or change resistance layer, the mode that then restores by annealing or oxidation prepares the metallic nano crystal particle.But the nanocrystalline randomness that this mode prepares is very large, and nanocrystalline quantity and size are difficult to control, cause the unsteadiness of conductive channel on size and number, thereby cause performance of devices very unstable.Based on above consideration, the present invention adopts the laminated construction of P type and N-type, utilize metallic nano crystal as the inducement of conductive channel, add forward bias at bottom electrode, so can form in the N-type district rich region of metal ion A+, owing to having majority carrier electronics e-in the N-type zone, metal ion A+ and electronics generation reduction reaction are reduced into metal A, the metal A enrichment becomes the nano-crystalline granule of metal A, this moment PN junction two ends reverse biased, the hole that irremovable positively charged is arranged at N district and depletion region, suppress the diffusion of A+, nano-crystalline granule is only grown between the non-depletion region in N district and hearth electrode, exist the electrode of the nano-crystalline granule of metal A can significantly improve device stability and power consumption.
Beneficial effect of the present invention:
Be that the doping quality is that the silicon dioxide of 1-10% phosphorus or N-type oxide that sputtering power is 50-300W are in the situation of titanium oxide at inducing layer I, it can effectively control electron concentration, thus the quantity that the control nano-crystalline granule forms; In addition because the distribution of electronics is inhomogeneity, thereby the uniformity of the metallic nano crystal particle that forms is that to add the metallic nano crystal particle of technique preparation more even than common people; After forming the nano-crystalline granule of even metal A in lower electrode surface, when bottom electrode is added reverse back bias voltage, the part of nano-crystalline granule is arranged because electric field strength is enhanced, and conductive channel forms conducting at first here, device is in low resistance state at this moment; When the forward that bottom electrode is applied another 1-10V or negative voltage, conductive channel becomes off-state, and device returns to high-impedance state, and the formation of conductive channel occurs in nanocrystalline position with disconnection.Therefore by controlling quantity and the diameter of metallic nano crystal, the effectively fluctuation of control device voltage and current, the controllability of raising memory.
Description of drawings
Accompanying drawing is the spontaneous growing metal nano-crystalline granule of this resistance-variable storing device view.
Among the figure: 1. bottom electrode 2. inducing layer I 3. inducing layer II 4. top electrodes 5. metallic nano crystal particles
Embodiment
Embodiment 1:
This resistance-variable storing device as shown in drawings, comprises spontaneous formation metallic nano crystal particle 5 among bottom electrode 1, inducing layer I2, inducing layer II3, top electrode 4 and the inducing layer I2; Bottom electrode is selected the copper metal of 50nm, and it is the silicon dioxide of 3% phosphorus that inducing layer I selects the doping quality of 100nm, and it is the silicon dioxide of 3% boron that inducing layer II selects the doping quality of 100nm; Top electrode is selected the 50nm platinum.
The preparation process of this resistance-variable storing device is as follows:
1) utilize PVD (physical vapor deposition) deposition bottom electrode, it is the thick metallic copper of 50nm;
2) utilizing PVD (physical vapor deposition) deposition inducing layer I doping quality is the silicon dioxide of 3% phosphorus, and its thickness is 100nm;
3) utilizing PVD (physical vapor deposition) deposition inducing layer II doping quality is the silicon dioxide of 3% boron, and its thickness is 100nm;
4) utilize electron beam evaporation (electron beam evaporation) deposition top electrode, it is the thick metal platinum of 50nm.
To above-mentioned resistance-variable storing device copper electrode biasing, platinum electrode ground connection.The bias voltage that adds first 5V, accompanying drawing is the spontaneous growing metal nano-crystalline granule of this resistance-variable storing device view, since the existence of PN junction and in inducing layer I spontaneous formation metallic nano crystal particle, thereby need not artificially add the metallic nano crystal particle, reduced the fluctuation that human factor causes.。Thereby then to copper electrode add-the 5V bias voltage makes it become the operation that low resistance is stored data " 1 ", thereby and to copper electrode add 2V or-bias voltage of 2V makes it become the operation that high resistance is stored data " 0 ".
Embodiment 2:
This resistance-variable storing device as shown in drawings, comprises spontaneous formation metallic nano crystal particle 5 among bottom electrode 1, inducing layer I2, inducing layer II3, top electrode 4 and the inducing layer I2; Bottom electrode is selected the copper metal of 50nm, and inducing layer I selects the 100nm titanium oxide, and inducing layer II selects the nickel oxide of 100nm; Top electrode is selected the 50nm platinum.
The preparation process of this resistance-variable storing device is as follows:
1) utilize PVD (physical vapor deposition) deposition bottom electrode, it is the thick metallic copper of 50nm;
2) utilize direct current magnetron sputtering process deposition inducing layer I titanium oxide, technological parameter is the power of 100W, and operating pressure is 1Pa, and partial pressure of oxygen is 5%, and temperature is 300K, and its thickness is 100nm;
3) utilize direct current magnetron sputtering process deposition inducing layer II nickel oxide, technological parameter is the power of 120W, and operating pressure is 1Pa, and partial pressure of oxygen is 10%, and temperature is 300K, and its thickness is 100nm;
4) utilize electron beam evaporation (electron beam evaporation) deposition top electrode, it is the thick metal platinum of 50nm.
To above-mentioned resistance-variable storing device copper electrode biasing, platinum electrode ground connection.The bias voltage that adds first 5V, accompanying drawing is the spontaneous growing metal nano-crystalline granule of this resistance-variable storing device view, since the existence of PN junction and in inducing layer I spontaneous formation metallic nano crystal particle, thereby need not artificially add the metallic nano crystal particle, reduced the fluctuation that human factor causes.。Thereby then to copper electrode add-the 5V bias voltage makes it become the operation that low resistance is stored data " 1 ", thereby and to copper electrode add 2V or-bias voltage of 2V makes it become the operation that high resistance is stored data " 0 ".
This resistance-variable storing device takes full advantage of stable resistive characteristic, the high reliability of above-mentioned resistive material.Except above-described embodiment resistance-variable storing device, utilize the material of above-mentioned resistive characteristic, can also construct other device architectures.
The above is only for the preferred embodiment of invention, and is within the spirit and principles in the present invention all not in order to limit the present invention, any modification of making, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. the P/N type lamination resistance-variable storing device of a spontaneous growing metal nano-crystalline granule, it is characterized in that: consisted of by bottom electrode, inducing layer I, inducing layer II and top electrode successively lamination, bottom electrode is for being easy to be oxidized to the metal of metal ion under the positive field effect, inducing layer I is the N-type oxide, inducing layer II is P type oxide, power on the very metal of stable in properties or conductive compound under electric field action, the thickness of bottom electrode, inducing layer I, inducing layer II and top electrode is respectively 5-200nm.
2. the P/N type lamination resistance-variable storing device of described spontaneous growing metal nano-crystalline granule according to claim 1 is characterized in that: the described metal that is easy to be oxidized to metal ion under the positive field effect is copper, silver, iron, zinc or nickel.
3. the P/N type lamination resistance-variable storing device of described spontaneous growing metal nano-crystalline granule according to claim 1, it is characterized in that: described N-type oxide power is that the titanium oxide or the doping quality that prepare under the 50-300W are the silicon dioxide of 1-10% phosphorus.
4. the P/N type lamination resistance-variable storing device of described spontaneous growing metal nano-crystalline granule according to claim 1, it is characterized in that: described P type oxide is that the nickel oxide or the doping quality that prepare under the 5-15% oxygen partial pressure are the silicon dioxide of 1-10% boron.
5. the P/N type lamination resistance-variable storing device of described spontaneous growing metal nano-crystalline granule according to claim 1 is characterized in that: described under electric field action the metal of stable in properties be platinum, iridium or ruthenium, conductive compound is titanium nitride or tin indium oxide.
6. the P/N type lamination resistance-variable storing device of described spontaneous growing metal nano-crystalline granule according to claim 1, it is characterized in that: described bottom electrode in electric field strength be under the positive field effect of 5-500M V/m in inducing layer I spontaneous growing metal nano-crystalline granule, thereby when bottom electrode is added reverse back bias voltage, become the operation that low resistance is stored data " 1 ", thereby when bottom electrode being added forward or backwards bias voltage, become the operation that high resistance is stored data " 0 ".
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103972386A (en) * | 2014-05-23 | 2014-08-06 | 中国科学院微电子研究所 | Method for preparing high-memory-density multi-value nanocrystalline memorizer |
| CN104835909A (en) * | 2014-02-11 | 2015-08-12 | 力晶科技股份有限公司 | Resistive random access memory |
| WO2016191830A1 (en) | 2015-06-05 | 2016-12-08 | Australian Advanced Materials Pty Ltd | A memory structure for use in resistive random access memory devices and method for use in manufacturing a data storage device |
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| US20100224849A1 (en) * | 2009-03-09 | 2010-09-09 | Samsung Electronics Co., Ltd. | Oxide diode, method of manufacturing the same, and electronic device and resistive memory device including the same |
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| CN101030622A (en) * | 2006-03-02 | 2007-09-05 | 三星电子株式会社 | Nonvolatile memory device and nonvolatile memory array including the same |
| CN101593809A (en) * | 2008-05-29 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | Resistive ram and manufacture method |
| US20100224849A1 (en) * | 2009-03-09 | 2010-09-09 | Samsung Electronics Co., Ltd. | Oxide diode, method of manufacturing the same, and electronic device and resistive memory device including the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104835909A (en) * | 2014-02-11 | 2015-08-12 | 力晶科技股份有限公司 | Resistive random access memory |
| CN104835909B (en) * | 2014-02-11 | 2017-05-17 | 力晶科技股份有限公司 | Resistive random access memory |
| CN103972386A (en) * | 2014-05-23 | 2014-08-06 | 中国科学院微电子研究所 | Method for preparing high-memory-density multi-value nanocrystalline memorizer |
| CN103972386B (en) * | 2014-05-23 | 2017-02-08 | 中国科学院微电子研究所 | Method for preparing high-memory-density multi-value nanocrystalline memorizer |
| WO2016191830A1 (en) | 2015-06-05 | 2016-12-08 | Australian Advanced Materials Pty Ltd | A memory structure for use in resistive random access memory devices and method for use in manufacturing a data storage device |
| CN108140409A (en) * | 2015-06-05 | 2018-06-08 | 澳大利亚高级材料有限公司 | Memory construction for resistive random access memory part and the method for manufaturing data memory device |
| US10529921B2 (en) | 2015-06-05 | 2020-01-07 | Australian Advanced Materials Pty Ltd | Memory structure for use in resistive random access memory devices and method for use in manufacturing a data storage device |
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