CN102891660A - Radio frequency impedance matcher - Google Patents
Radio frequency impedance matcher Download PDFInfo
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- CN102891660A CN102891660A CN2012103912170A CN201210391217A CN102891660A CN 102891660 A CN102891660 A CN 102891660A CN 2012103912170 A CN2012103912170 A CN 2012103912170A CN 201210391217 A CN201210391217 A CN 201210391217A CN 102891660 A CN102891660 A CN 102891660A
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- impedance
- changing air
- air capacitor
- variable air
- radio frequency
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Abstract
The invention discloses a radio frequency impedance matcher and belongs to the technical field of semiconductor process equipment. The radio frequency impedance matcher comprises a first variable air capacitor, a second variable air capacitor, an inductor and a third variable air capacitor, wherein the second variable air capacitor and the third variable air capacitor are connected in parallel, are connected in series with the inductor and are connected in parallel with the first variable air capacitor. According to the radio frequency impedance matcher, a load with a high quality factor Q value can be subjected to accurate impedance matching, the impedance matching circuit is simple in structure, the matching process is convenient and rapid, the pure resistance of load impedance is realized, and the manufacturing requirements of a semiconductor process are met.
Description
Technical field
The present invention relates to the semiconductor manufacturing equipment technical field, particularly a kind of radio-frequency (RF) impedance adaptation.
Background technology
Impedance matching refers to that the characteristic impedance of driving source internal driving, transmission line and load impedance are adaptive mutually, reach a kind of operating state of maximum power output, particularly convert load impedance to a suitable impedance or impedance ranges exactly, this impedance or impedance ranges can make radio-frequency power supply be in normal running status, see from the load aspect be can make load obtain as far as possible the powerful while again proof load can work.
In semiconductor manufacturing equipment, RF(radio frequency) generating means (the constant output impedance equals characteristic impedance 50 Ω of transmission line) provides the RF ripple of fixed frequency (being generally 13.56MHz) to plasma chamber, is used for the plasma of vitalizing semiconductor technique.Generally, the impedance of plasma chamber and the characteristic impedance of transmission line (being generally 50 Ω in the semiconductor manufacturing equipment) are inconsistent, its reason be on transmission line except incident wave, also reflected wave can appear, the existence of reflected wave means that the power that the RF generator produces can not all flow to plasma chamber, efficiency of transmission is reduced, cause the coupling mismatch.For the impedance that makes plasma chamber consistent with the characteristic impedance of transmission line, need between radio-frequency transmission line and plasma chamber, to insert the radio-frequency (RF) impedance adaptation, its purposes is to realize impedance transformation, be about to the characteristic impedance value that given load impedance value is transformed into transmission line, realize the areflexia transmission.
In semiconductor manufacturing equipment, especially in inductive load, the quality factor q value of loading coil tends to higher, need accurate electric capacity just can find match point, the manual adaptation of existing air electric capacity as shown in Figure 1, the capacitance variations value of each angle is large, can not satisfy the coupling requirement under the high Q value, and is difficult to be stabilized in match point when impedance matching is regulated.
Summary of the invention
Low in order to solve existing radio-frequency (RF) impedance adaptation degree of regulation, the problems such as matching process difficulty, the invention provides a kind of radio-frequency (RF) impedance adaptation, but but comprise the first changing air electric capacity, the second changing air electric capacity, inductance, but also comprise the 3rd changing air electric capacity, but but connect with described inductance behind described the second changing air electric capacity and the 3rd changing air Capacitance parallel connection, but again with described the first changing air Capacitance parallel connection.
But but the appearance value of described the second changing air electric capacity is greater than the appearance value of described the 3rd changing air electric capacity.
Radio-frequency (RF) impedance adaptation provided by the invention, can carry out accurate impedance matching to the load of high quality factor Q value, impedance matching circuit is simple in structure, and matching process is convenient and swift, realize the pure resistive of load impedance, satisfied the preparation requirement of semiconductor technology.
Description of drawings
Fig. 1 is the circuit theory diagrams of prior art radio-frequency (RF) impedance adaptation;
Fig. 2 is the circuit theory diagrams of the radio-frequency (RF) impedance adaptation of the embodiment of the invention.
Embodiment
Below in conjunction with drawings and Examples, technical solution of the present invention is further described.
Referring to Fig. 2, the embodiment of the invention provides a kind of radio-frequency (RF) impedance adaptation, this radio-frequency (RF) impedance adaptation between radio-frequency power supply and plasma chamber, but but but comprise the first changing air capacitor C 1, the second changing air capacitor C 2, inductance L and the 3rd changing air capacitor C 3; Wherein, but but connect with inductance L after the second changing air capacitor C 2 and 3 parallel connections of the 3rd changing air capacitor C, but in parallel with the first changing air capacitor C 1 again; But but the appearance value of the second changing air capacitor C 2 is greater than the appearance value of the 3rd changing air capacitor C 3.
Concrete matching network parameter is as follows: but the first changing air capacitor C 1 is 1000pF, but the second changing air capacitor C 2 is 100pF, but the 3rd changing air capacitor C 3 is 50pF, series inductance L is 145nH.
In the present embodiment, but the first changing air capacitor C 1 is used for adjusting the real part of load impedance, but but inductance L, the second changing air capacitor C 2 and the 3rd changing air capacitor C 3 are used for adjusting the imaginary part of load impedance.In matching process, it is 50 ohm but adjustment the first changing air capacitor C 1 makes the real part of load impedance; Carry out coarse adjustment but adjust the second changing air capacitor C 2, but adjust the 3rd changing air capacitor C 3 during match point to be approached again, the imaginary part that makes load impedance is zero; Through after the above-mentioned adjustment, load impedance is pure resistive 50 ohm.
The radio-frequency (RF) impedance adaptation that the embodiment of the invention provides, " L " type of employing circuit structure, can carry out accurate impedance matching to the load of high quality factor Q value, impedance matching circuit is simple in structure, matching process is convenient and swift, realize the pure resistive of load impedance, satisfied the preparation requirement of semiconductor technology.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. radio-frequency (RF) impedance adaptation, but but comprise the first changing air electric capacity, the second changing air electric capacity, inductance, it is characterized in that, but also comprise the 3rd changing air electric capacity, but but connect with described inductance behind described the second changing air electric capacity and the 3rd changing air Capacitance parallel connection, but again with described the first changing air Capacitance parallel connection.
2. radio-frequency (RF) impedance adaptation as claimed in claim 1 is characterized in that, but but the appearance value of described the second changing air electric capacity greater than the appearance value of described the 3rd changing air electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103912170A CN102891660A (en) | 2012-10-15 | 2012-10-15 | Radio frequency impedance matcher |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103912170A CN102891660A (en) | 2012-10-15 | 2012-10-15 | Radio frequency impedance matcher |
Publications (1)
| Publication Number | Publication Date |
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| CN102891660A true CN102891660A (en) | 2013-01-23 |
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| CN2012103912170A Pending CN102891660A (en) | 2012-10-15 | 2012-10-15 | Radio frequency impedance matcher |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103065791A (en) * | 2013-01-25 | 2013-04-24 | 中国科学院微电子研究所 | Air capacitor structure for matcher equipment |
| CN104749514A (en) * | 2015-04-10 | 2015-07-01 | 中国电子科技集团公司第三十八研究所 | Direct connection type testing device for low-power-consumption differential transmission chip |
| CN105093002A (en) * | 2014-05-21 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Test system and method of impedance matcher |
| CN105097397A (en) * | 2014-05-22 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching device and semiconductor machining equipment |
| CN106098524A (en) * | 2016-06-27 | 2016-11-09 | 江苏鲁汶仪器有限公司 | Injection frequency power sense coupling machine |
| WO2020140713A1 (en) * | 2019-01-04 | 2020-07-09 | 海尔智家股份有限公司 | Electromagnetic wave generating system and heating apparatus having same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120038524A1 (en) * | 2010-08-11 | 2012-02-16 | Lg Innotek Co., Ltd. | Impedance Matching Method, Impedance Matching Apparatus For The Same, and Record Medium |
| CN102378332A (en) * | 2010-08-13 | 2012-03-14 | 三星电机株式会社 | Wireless power transmission apparatus and transmission method thereof |
-
2012
- 2012-10-15 CN CN2012103912170A patent/CN102891660A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120038524A1 (en) * | 2010-08-11 | 2012-02-16 | Lg Innotek Co., Ltd. | Impedance Matching Method, Impedance Matching Apparatus For The Same, and Record Medium |
| CN102378332A (en) * | 2010-08-13 | 2012-03-14 | 三星电机株式会社 | Wireless power transmission apparatus and transmission method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 孙小孟等: "ALD中射频阻抗匹配器的设计与研究", 《现代电子技术》 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103065791A (en) * | 2013-01-25 | 2013-04-24 | 中国科学院微电子研究所 | Air capacitor structure for matcher equipment |
| CN103065791B (en) * | 2013-01-25 | 2016-01-20 | 中国科学院微电子研究所 | A kind of air capacitor structure for adaptation equipment |
| CN105093002A (en) * | 2014-05-21 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Test system and method of impedance matcher |
| CN105093002B (en) * | 2014-05-21 | 2018-05-25 | 北京北方华创微电子装备有限公司 | The test system and method for impedance matching box |
| CN105097397A (en) * | 2014-05-22 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching device and semiconductor machining equipment |
| CN105097397B (en) * | 2014-05-22 | 2018-05-08 | 北京北方华创微电子装备有限公司 | Impedance-matching device and semiconductor processing equipment |
| CN104749514A (en) * | 2015-04-10 | 2015-07-01 | 中国电子科技集团公司第三十八研究所 | Direct connection type testing device for low-power-consumption differential transmission chip |
| CN106098524A (en) * | 2016-06-27 | 2016-11-09 | 江苏鲁汶仪器有限公司 | Injection frequency power sense coupling machine |
| CN106098524B (en) * | 2016-06-27 | 2017-12-19 | 江苏鲁汶仪器有限公司 | Injection frequency power sense coupling machine |
| WO2020140713A1 (en) * | 2019-01-04 | 2020-07-09 | 海尔智家股份有限公司 | Electromagnetic wave generating system and heating apparatus having same |
| US11889610B2 (en) | 2019-01-04 | 2024-01-30 | Haier Smart Home Co., Ltd. | Electromagnetic wave generating system and heating device with electromagnetic wave generating system |
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Application publication date: 20130123 |