CN102891369A - Metamaterial preparation method based on CMOS (complementary metal-oxide-semiconductor transistor) and metamaterial - Google Patents
Metamaterial preparation method based on CMOS (complementary metal-oxide-semiconductor transistor) and metamaterial Download PDFInfo
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- CN102891369A CN102891369A CN2011101209735A CN201110120973A CN102891369A CN 102891369 A CN102891369 A CN 102891369A CN 2011101209735 A CN2011101209735 A CN 2011101209735A CN 201110120973 A CN201110120973 A CN 201110120973A CN 102891369 A CN102891369 A CN 102891369A
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Abstract
The embodiment of the invention provides a metamaterial preparation method based on a CMOS (complementary metal-oxide-semiconductor transistor). The method comprises the following steps: forming a first metal layer on a first dielectric layer; manufacturing microstructures on the first metal layer; forming a second dielectric layer on the first metal layer with the microstructures; manufacturing a through hole on the second dielectric layer; forming a second metal layer on the second dielectric layer with the through hole; manufacturing microstructures on the second metal layer; and forming a third dielectric layer on the second metal layer with the microstructures so as to obtain the metamaterial. The embodiment of the invention further provides a metamaterial. The metamaterial which is higher in microstructure controllable performance and more accordant with design requirements and has richer electromagnetic characteristics is obtained.
Description
[technical field]
The present invention relates to super material technology field, relate in particular to a kind of super material preparation method based on CMOS technique and super material.
[background technology]
Along with the fast development of the new and high technologies such as radar detection, satellite communication, Aero-Space, and the rise of the research field such as anti-electromagnetic interference, stealth technique, microwave dark room, the research of microwave absorbing material more and more is subject to people's attention.Because very marvellous galvanomagnetic effect can appear in super material, can be used for the fields such as absorbing material and stealth material, becomes the focus of absorbing material area research.Super material character and function mainly come from its inner structure, how to prepare the key that the three-dimensional fine structure with periodic arrangement becomes super material preparation technology.
CMOS (Complementary Metal Oxide Semiconductor, CMOS (Complementary Metal Oxide Semiconductor)) technique is to realize the technique of controlled minimum dimension in the current semiconductor technology, the technique of 32nm is ripe gradually now, and the technique of smaller szie is developed.Simultaneously, the usage quantity of metal level can have been realized 8 layers metal connecting line now also in continuous increase in the CMOS technique.But CMOS technique is not applied in the super material preparation process yet.
[summary of the invention]
Technical problem to be solved by this invention provides a kind of super material preparation method based on CMOS technique and super material, can access the micro-structural controllability higher, also more meet the super material of designing requirement.
For solving the problems of the technologies described above, the embodiment of the invention provides a kind of super material preparation method based on CMOS technique, and the method comprises:
Form the first metal layer at the first dielectric layer;
Make micro-structural at described the first metal layer;
Form the second dielectric layer at the first metal layer with micro-structural;
Make through hole at described the second dielectric layer;
Form the second metal level at the second dielectric layer with through hole;
Make micro-structural at described the second metal level;
Form the 3rd dielectric layer at the second metal level with micro-structural, obtain super material.
Another embodiment of the present invention also provides a kind of super material that adopts the technique scheme preparation.
Technique scheme has the following advantages: make micro-structural at the first metal layer, form the second dielectric layer at the first metal layer with micro-structural, make through hole at the second dielectric layer, form the second metal level at the second dielectric layer with through hole, then make micro-structural at the second metal level, the first metal layer that therefore will have micro-structural by through hole, link together with the second metal level with micro-structural, the super material that adopts this mode to prepare, compare with the super material of single-layer metal preparation, have the electromagnetic property that is different from, can realize abundanter, the super material of superior function more.
[description of drawings]
In order to be illustrated more clearly in the technical scheme in the embodiment of the invention, the accompanying drawing of required use was done to introduce simply during the below will describe embodiment, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is a kind of super material preparation method flow chart based on CMOS technique that the embodiment of the invention one provides;
Fig. 2 is a kind of super material preparation method flow chart based on CMOS technique that the embodiment of the invention two provides;
Fig. 3 is a kind of super material preparation method flow chart based on CMOS technique that the embodiment of the invention three provides;
Fig. 4 is the structural representation of the super material that provides of the embodiment of the invention.
[embodiment]
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making all other embodiment that obtain under the creative work prerequisite.
Embodiment one,
Referring to Fig. 1, be a kind of super material preparation method flow chart based on CMOS technique that the invention process one provides, this super material preparation method comprises the steps:
S101: form the first metal layer at the first dielectric layer.
Concrete, adopt the mode of physical vapour deposition (PVD) to form the first metal layer at the first dielectric layer; Perhaps, adopt the mode of chemical vapour deposition (CVD) to form the first metal layer at the first dielectric layer.
S102: make micro-structural at the first metal layer.
Concrete, apply one deck photoresist at the first metal layer, according to default micro-structural photoresist is carried out photoetching; Adopt the mode of wet etching or dry etching to transfer on the first metal layer in the figure that forms after the photoetching on the photoresist; Then remove the photoresist that is coated on the first metal layer, the first metal layer that obtains having micro-structural.
S103: form the second dielectric layer at the first metal layer with micro-structural.
Concrete, can adopt the mode of chemical vapour deposition (CVD), form the second dielectric layer at the first metal layer with micro-structural.
S104: make through hole at the second dielectric layer.
Concrete, apply one deck photoresist at the second dielectric layer, according to the size and shape in default hole photoresist is carried out photoetching; The figure that forms after the photoetching on the photoresist is transferred on the second dielectric layer; Removal is coated in the photoresist on the second dielectric layer, obtains having the second dielectric layer of through hole.
S105: form the second metal level at the second dielectric layer with through hole, this second metal level is connected by through hole with the first metal layer.
In concrete implementation process, can adopt the mode identical with S101 to form the second metal level at the second dielectric layer with through hole, and in the process that forms the second metal level, adopt generally speaking the metal material identical with the second metal level to fill the through hole that S104 makes.
S106: make micro-structural at the second metal level.
Concrete, can adopt the mode identical with S102 to make micro-structural at the second metal level.
S107: form the 3rd dielectric layer at the second metal level with micro-structural, obtain super material.
Concrete, this mode that forms the 3rd dielectric layer is identical with S103.
Wherein, the first dielectric layer, the second dielectric layer and the 3rd dielectric layer can have identical dielectric substance; Perhaps different dielectric substance.Generally speaking, the first dielectric layer, the second dielectric layer and the 3rd dielectric layer all adopt insulating material, such as silicon dioxide, pottery etc.
Wherein, the first metal layer has identical metal material with the second metal level; Perhaps different metal material.In concrete implementation process, arrange according to specific requirement.
In the present embodiment, make micro-structural at the first metal layer, form the second dielectric layer at the first metal layer with micro-structural, make through hole at the second dielectric layer, form the second metal level at the second dielectric layer with through hole, then make micro-structural at the second metal level, the first metal layer that therefore will have micro-structural by through hole, link together with the second metal level with micro-structural, the super material that adopts this mode to prepare, compare with the super material of single-layer metal preparation, have the electromagnetic property that is different from, can realize abundanter, the super material of superior function more.
Embodiment two,
Referring to Fig. 2, be a kind of super material preparation method flow chart based on CMOS technique that the invention process two provides, this super material preparation method comprises the steps:
S201: adopt the mode of evaporation, form the first metal layer at the first dielectric layer.
Wherein, the material of the first dielectric layer is insulating material.
Wherein, the material of the first metal layer is the electric conducting materials such as copper, aluminium.
Wherein, the mode of evaporation is to well known to a person skilled in the art technology in the CMOS technique, repeats no more herein.
S202: make micro-structural at the first metal layer.
Concrete, apply one deck photoresist at the first metal layer, according to default micro-structural photoresist is carried out photoetching; Adopt the mode of wet etching or dry etching to transfer on the first metal layer in the figure that forms after the photoetching on the photoresist; Then remove the photoresist that is coated on the first metal layer, the first metal layer that obtains having micro-structural.
Wherein, the mode of wet etching and dry etching belongs to the technology of well known to a person skilled in the art, this book repeats no more.
S203: form the second dielectric layer at the first metal layer with micro-structural.
Concrete, can adopt the mode of chemical vapour deposition (CVD), form the second dielectric layer at the first metal layer with micro-structural.
S204: make through hole at the second dielectric layer.
Concrete, apply one deck photoresist at the second dielectric layer, according to the size and shape in default hole photoresist is carried out photoetching; The figure that forms after the photoetching on the photoresist is transferred on the second dielectric layer; Removal is coated in the photoresist on the second dielectric layer, obtains having the second dielectric layer of through hole.
S205: form the second metal level at the second dielectric layer with through hole, this second metal level has identical metal material with the first metal layer.
In concrete implementation process, can adopt the mode identical with S201 to form the second metal level at the second dielectric layer with through hole, and in the process that forms the second metal level, adopt the metal material identical with the second metal level to fill the through hole that S204 makes.
S206: make micro-structural at the second metal level.
Concrete, can adopt the mode identical with S202 to make micro-structural at the second metal level, repeat no more herein.
S207: form the 3rd dielectric layer at the second metal level with micro-structural, obtain super material.
Concrete, this mode that forms the 3rd dielectric layer is identical with S203, repeats no more herein.
Wherein, the first dielectric layer, the second dielectric layer and the 3rd dielectric layer have identical dielectric substance; Perhaps the first dielectric layer has identical dielectric substance with the second dielectric layer; Perhaps the first dielectric layer has identical dielectric substance with the 3rd dielectric layer; Perhaps the second dielectric layer has identical dielectric substance with the 3rd dielectric layer; Perhaps the dielectric substance that has of the first dielectric layer, the second dielectric layer and the 3rd dielectric is different.
Generally speaking, the first dielectric layer, the second dielectric layer and the 3rd dielectric layer all adopt insulating material, such as silicon dioxide, pottery etc.
In the present embodiment, adopt the mode of evaporation, make micro-structural at the first metal layer, form the second dielectric layer at the first metal layer with micro-structural, make through hole at the second dielectric layer, have on the second dielectric layer of through hole, form the second metal level that has same metal material with the first metal layer, then make micro-structural at the second metal level, the first metal layer that therefore will have micro-structural by through hole, link together with the second metal level with micro-structural, the super material that adopts this mode to prepare, compare with the super material of single-layer metal preparation, have the electromagnetic property that is different from, can realize abundanter, the super material of superior function more.
Embodiment three,
Referring to Fig. 3, be a kind of super material preparation method flow chart based on CMOS technique that the invention process three provides, this super material preparation method comprises the steps:
S301: adopt the mode of sputter, form the first metal layer at the first dielectric layer.
Wherein, the material of the first dielectric layer is insulating material.
Wherein, the material of the first metal layer is the electric conducting materials such as copper, aluminium.
Wherein the mode of sputter is to well known to a person skilled in the art technology in the CMOS technique, repeats no more herein.
S302: make micro-structural at the first metal layer.
Concrete, apply one deck photoresist at the first metal layer, according to default micro-structural photoresist is carried out photoetching; Adopt the mode of wet etching or dry etching to transfer on the first metal layer in the figure that forms after the photoetching on the photoresist; Then remove the photoresist that is coated on the first metal layer, the first metal layer that obtains having micro-structural.
Wherein, the mode of wet etching and dry etching belongs to the technology of well known to a person skilled in the art, this book repeats no more.
S303: form the second dielectric layer at the first metal layer with micro-structural.
Concrete, can adopt the mode of chemical vapour deposition (CVD), form the second dielectric layer at the first metal layer with micro-structural.
S304: make through hole at the second dielectric layer.
Concrete, apply one deck photoresist at the second dielectric layer, according to the size and shape in default hole photoresist is carried out photoetching; The figure that forms after the photoetching on the photoresist is transferred on the second dielectric layer; Removal is coated in the photoresist on the second dielectric layer, obtains having the second dielectric layer of through hole.
S305: form the second metal level at the second dielectric layer with through hole, this second metal level has different metal materials from the first metal layer.
In concrete implementation process, can adopt the mode identical with S201 to form the second metal level at the second dielectric layer with through hole, and in the process that forms the second metal level, adopt the metal material identical with the second metal level to fill the through hole that S204 makes.
S306: make micro-structural at the second metal level.
Concrete, can adopt the mode identical with S202 to make micro-structural at the second metal level, repeat no more herein.
S307: form the 3rd dielectric layer at the second metal level with micro-structural, obtain super material.
Concrete, this mode that forms the 3rd dielectric layer is identical with S203, repeats no more herein.
Wherein, the first dielectric layer, the second dielectric layer and the 3rd dielectric layer have identical dielectric substance; Perhaps the first dielectric layer has identical dielectric substance with the second dielectric layer; Perhaps the first dielectric layer has identical dielectric substance with the 3rd dielectric layer; Perhaps the second dielectric layer has identical dielectric substance with the 3rd dielectric layer; Perhaps the dielectric substance that has of the first dielectric layer, the second dielectric layer and the 3rd dielectric is different.
Generally speaking, the first dielectric layer, the second dielectric layer and the 3rd dielectric layer all adopt insulating material, such as silicon dioxide, pottery etc.
In the present embodiment, adopt the mode of sputter, make micro-structural at the first metal layer, form the second dielectric layer at the first metal layer with micro-structural, make through hole at the second dielectric layer, have on the second dielectric layer of through hole, form the second metal level that has different metal material with the first metal layer, then make micro-structural at the second metal level, the first metal layer that therefore will have micro-structural by through hole, link together with the second metal level with micro-structural, the super material that adopts this mode to prepare, compare with the super material of single-layer metal preparation, have the electromagnetic property that is different from, can realize abundanter, the super material of superior function more.
Above-described embodiment has been described the super material preparation method based on CMOS technique, and the present invention also comprises the super material that adopts above-mentioned execution mode preparation.
Referring to Fig. 4, the structural representation of the super material that provides for the embodiment of the invention, the structure of this super material comprises: the first dielectric layer 401; The first metal layer 402 that is connected with the first dielectric layer 401; The second dielectric layer 404 that has through hole 403 and be connected with the first metal layer 402; The second metal level 405 that is connected with the first metal layer 402 by through hole 403; And the 3rd dielectric layer 406 that is connected with the second metal level 405.
Wherein, the first dielectric layer 401, has identical dielectric substance with the second dielectric layer 404 and the 3rd dielectric layer 406, perhaps different dielectric substances.
Wherein, the first metal layer 402 has identical metal material with the second metal level 405, perhaps different metal materials.
The material of wherein, filling in the through hole 403 is identical with the material of the second metal level 405.
More than the embodiment of the invention is described in detail, used specific case herein principle of the present invention and execution mode set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (11)
1. super material preparation method based on CMOS technique is characterized in that described method comprises:
Form the first metal layer at the first dielectric layer;
Make micro-structural at described the first metal layer;
Form the second dielectric layer at the first metal layer with micro-structural;
Make through hole at described the second dielectric layer;
Form the second metal level at the second dielectric layer with through hole;
Make micro-structural at described the second metal level;
Form the 3rd dielectric layer at the second metal level with micro-structural, obtain super material.
2. method according to claim 1 is characterized in that, describedly forms the first metal layer at the first dielectric layer, comprising:
Adopt the mode of physical vapour deposition (PVD) to form the first metal layer at the first dielectric layer.
3. method according to claim 2 is characterized in that, described mode adopting physical vapour deposition (PVD) forms the first metal layer at the first dielectric layer, comprising:
Adopt the mode of evaporation to form the first metal layer at the first dielectric layer.
4. method according to claim 2 is characterized in that, described mode adopting physical vapour deposition (PVD) forms the first metal layer at the first dielectric layer, comprising:
Adopt the mode of sputter to form the first metal layer at the first dielectric layer.
5. method according to claim 1 is characterized in that, describedly forms the first metal layer at the first dielectric layer, comprising:
Adopt the mode of chemical vapour deposition (CVD) to form the first metal layer at the first dielectric layer.
6. method according to claim 1 is characterized in that, describedly makes micro-structural at described the first metal layer, specifically comprises:
Apply one deck photoresist at described the first metal layer, according to default micro-structural described photoresist is carried out photoetching;
The figure that forms after the photoetching on the photoresist is transferred on the described the first metal layer;
Removal is coated in the photoresist on the described the first metal layer, obtains having the first metal layer of micro-structural.
7. method according to claim 1 is characterized in that, describedly makes through hole at described the second dielectric layer, specifically comprises:
Apply one deck photoresist at described the second dielectric layer, according to the size and shape in default hole described photoresist is carried out photoetching;
The figure that forms after the photoetching on the photoresist is transferred on described the second dielectric layer;
Removal is coated in the photoresist on described the second dielectric layer, obtains having the second dielectric layer of through hole.
8. method according to claim 1 is characterized in that, describedly makes through hole at described the second dielectric layer, further comprises:
In described through hole, fill the metal material identical with described the second metal level.
9. method according to claim 1 is characterized in that, described the first dielectric layer, described the second dielectric layer and described the 3rd dielectric layer have identical dielectric substance; Perhaps different dielectric substance.
10. method according to claim 1 is characterized in that, described the first metal layer has identical metal material with described the second metal level; Perhaps different metal material.
11. a super material is characterized in that, comprises the super material that adopts the described method preparation of claim 1 to 10 any one.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103779667A (en) * | 2014-02-11 | 2014-05-07 | 国家纳米科学中心 | Structural wave-absorbing material and manufacturing method thereof |
Citations (1)
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| CN101290879A (en) * | 2007-04-17 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of gate |
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| CN101290879A (en) * | 2007-04-17 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of gate |
Non-Patent Citations (1)
| Title |
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| ALEXANDER B. YAKOVLEV等: ""Broadband Negative Refraction at Microwaves with a Multilayered Mushroom-Type Metamaterial"", 《MICROWAVE SYMPOSIUM DIGEST(MTT),2010 IEEE MTT-S INTERNATIOANL》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103779667A (en) * | 2014-02-11 | 2014-05-07 | 国家纳米科学中心 | Structural wave-absorbing material and manufacturing method thereof |
| CN103779667B (en) * | 2014-02-11 | 2016-02-03 | 国家纳米科学中心 | A kind of structural absorbing mater ials and preparation method thereof |
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