CN102891115B - Substrate and preparation method thereof - Google Patents
Substrate and preparation method thereof Download PDFInfo
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- CN102891115B CN102891115B CN201210385062.XA CN201210385062A CN102891115B CN 102891115 B CN102891115 B CN 102891115B CN 201210385062 A CN201210385062 A CN 201210385062A CN 102891115 B CN102891115 B CN 102891115B
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Abstract
The embodiment provides a kind of substrate and preparation method thereof, relate to field of display devices, it is possible to make substrate have the performance of slimming and flexibility concurrently.Described substrate includes: glass substrate；At least side of described glass substrate is provided with resin film.The present invention can be used in middle display device.
Description
Technical field
The present invention relates to field of display devices, particularly relate to a kind of substrate and preparation method thereof.
Background technology
In recent years, flat faced display development, and increasingly pursue slimming and flexibility.Should
Flexible base board for flexible display is studied widely and is used.Flexible base board main
Type and research direction are glass substrate, plastic base and silicon substrate etc..
The most the most frequently used substrate is glass substrate, but after glass substrate is by slimming, its
Resistance to impact is very poor, the most broken, and this is owing to when receiving impact or extruding, glass produces table
Face stress also extends inward, so that glass ftractures rapidly.Although resin film-like substrate flexibility
Good, but hygroscopic, moisture absorption, thus cause the deformation of substrate, and then make the circuit on substrate
Hydraulic performance decline.
Summary of the invention
The main purpose of embodiments of the invention is to provide a kind of substrate and preparation method thereof, it is possible to
Substrate is made to have the performance of slimming and flexibility concurrently.
For reaching above-mentioned purpose, embodiments of the invention adopt the following technical scheme that
A kind of substrate, including:
Glass substrate；At least side of described glass substrate is provided with resin film.
Concrete, the thickness of described glass substrate can be 20 microns～300 microns, described resin
The thickness of thin film can be 10 nanometers～10 microns.
Optionally, the both sides of described glass substrate all can be provided with resin film；
Described glass substrate can be provided with at least one through hole, described in be arranged on described substrate two
The resin film of side is coupled by described through hole integration.Concrete, the radius of described through hole is permissible
It it is 0.1 millimeter～4 millimeters.
Further alternative, described substrate is provided with sealed plastic box, the most described through hole may be provided at institute
State the substrate regions that sealed plastic box is peripheral.
Further alternative, described resin film is also provided with polymer insulation film, conduction
The combination of one or more in polymeric film, inorganic compound film and pattern metal film.
Additionally, embodiments of the invention also adopt the following technical scheme that
A kind of preparation method of substrate, including:
Glass substrate is provided；
At least side of described glass substrate is formed resin film.
Optionally, before at least side of described glass substrate forms resin film, described side
Method includes:
Described glass substrate is formed at least one through hole；
Then the described resin film that formed at least side of described glass substrate includes:
Form resin film respectively in the both sides of described glass substrate, described resin film is by described
Through hole integration couples.
Further alternative, after the both sides of described glass substrate form resin film respectively, described
Method also includes:
Described glass substrate is formed sealed plastic box；
On described glass substrate, form at least one through hole described in then to include:
The substrate regions peripheral in described sealed plastic box forms at least one through hole.
Further alternative, after at least side of described glass substrate forms resin film,
Described method also includes:
Described resin film is formed polymer insulation film, conductive polymer membrane, inorganic compound
The combination of one or more in film and pattern metal film.
Substrate that the embodiment of the present invention provides and preparation method thereof, arranges resin thin on the glass substrate
Film, utilizes the performances such as the low water absorption of glass substrate and low morphotropism to make the electricity being deposited on substrate
Road can keep the highest performance, and the resin film arranged on the glass substrate adds the resistance to of substrate
Impact property and pliability so that while ensureing substrate slimming performance, improve the soft of substrate
Property performance.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will
The accompanying drawing used required in embodiment or description of the prior art is briefly described, it is clear that
Ground, the accompanying drawing in describing below is only some embodiments of the present invention, skill common for this area
From the point of view of art personnel, on the premise of not paying creative work, it is also possible to obtain according to these accompanying drawings
Obtain other accompanying drawing.
The board structure schematic diagram that Fig. 1 provides for one embodiment of the invention；
The board structure schematic diagram that Fig. 2 provides for another embodiment of the present invention；
The board structure schematic diagram that Fig. 3 provides for another embodiment of the present invention；
The base plate preparation method flow chart that Fig. 4 provides for one embodiment of the invention；
The base plate preparation method flow chart that Fig. 5 provides for another embodiment of the present invention；
The base plate preparation method flow chart that Fig. 6 provides for another embodiment of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, to the technical scheme in the embodiment of the present invention
It is clearly and completely described, it is clear that described embodiment is only that a part of the present invention is real
Execute example rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill
The every other embodiment that personnel are obtained under not making creative work premise, broadly falls into this
The scope of invention protection.
Below in conjunction with the accompanying drawings substrate of the embodiment of the present invention and preparation method thereof is described in detail.
Embodiments provide a kind of substrate 10, as it is shown in figure 1, this substrate includes:
Glass substrate 101, this glass substrate 101 can be that Alborex M 12 glass or alkali glass etc. are inorganic
Glass, this is not construed as limiting by the embodiment of the present invention.
At least side of glass substrate 101 is provided with resin film 102.Resin film 102 has
The characteristics such as standby high tenacity, insulating properties, flatness, low water absorption and low morphotropism.
Wherein, resin film 102 can be polymer resinous thin film.Optionally, by following material
In one or more formed resin films 102: polyimides (PI), polyamide (PA),
Polyethylene terephthalate (PET), Merlon (PC), polyether-ether-ketone (PEK), polyethers
Sulfone (PES), polyacrylate (PAR), polysulfones (PS), liquid crystal polymer (LCP), modified polyphenylene
Ether (PPE) etc..Certainly, the resin film 102 of the embodiment of the present invention is not limited to be formed by above-mentioned material
Polymer resinous thin film, those skilled in the art also can be according to general knowledge known in this field or conventional skill
Art means select other to possess high tenacity, insulating properties, flatness, low water absorption and low morphotropism
Thin film.Certainly, this is not construed as limiting by the embodiment of the present invention, and resin film 102 can also be other
Possesses the thin film of the characteristics such as high tenacity, insulating properties, flatness, low water absorption and low morphotropism.
In embodiments of the present invention, can only to be provided with resin thin wherein side at glass substrate 101
Film 102, and opposite side is not provided with other structure sheafs, or can be provided with and this resin film 102
The structure sheaf that function is different.Certainly, it is possible on the both sides of glass substrate 102, be provided with resin
Thin film 102.This is not construed as limiting by the embodiment of the present invention.
The substrate that the embodiment of the present invention provides, arranges resin film 102 on glass substrate 101,
The performances such as the low water absorption of glass substrate 101 and low morphotropism are utilized to make to deposit on the substrate 10
Circuit can keep the highest performance, and the resin film 102 arranged on glass substrate 101 increases
The impact resistance of substrate 10 and pliability so that ensureing the same of substrate 10 slimming performance
Time improve the flexibility performance of substrate 10.
Preferably, in the embodiment that the present invention provides, the thickness of glass substrate 101 is 20
Micron～300 microns, the thickness of resin film 102 is 10 nanometers～10 microns.Such as Fig. 1 institute
In the substrate 10 shown, the thickness of glass substrate 101 is 90 microns, the thickness of resin film 102
It it is 0.01 micron.Certainly, the merely illustrative descriptive purpose of substrate 10 shown in Fig. 1, do not limit
The present invention implements glass substrate 101 and resin film 102 thickness, and those skilled in the art can basis
General knowledge known in this field or common technology means are configured, and such as the thickness of glass substrate 101 is also
Can be 30 microns, 100 microns, 200 microns etc..The thickness of resin film 102 can also be
80 nanometers, 100 nanometers, 0.8 micron, 9 microns etc..
The substrate 10 that the embodiment of the present invention provides, the thickness of glass substrate 101 is 20 microns～300
Micron, the thickness of resin film 102 is 10 nanometers～10 microns, it is possible to ensureing that substrate 10 is thin
While type, improve the flexibility of substrate.
It is further preferred that in the embodiment that the present invention provides, as in figure 2 it is shown, at glass
The both sides of glass substrate 101 are provided with resin film 102.The thickness of two layers of resin thin film 102 can
With identical can also be different, this is not construed as limiting by the embodiment of the present invention.Glass substrate 101 sets
It is equipped with at least one through hole 103, is arranged on the two layers of resin thin film 102 of substrate 10 by through hole 103
Integration couples.During forming resin film 102 by coating process, the resin of coating
Solution enters in through hole 103, and then during film-forming, by glass substrate 10 both sides
Two layers of resin thin film 102 forms as one.
Through hole 103 may be configured as one or more, such as, in the substrate 10 shown in Fig. 2, be provided with
4 through hole 103(figures only illustrate two), lay respectively at the corner of substrate 10.Certainly,
The merely illustrative descriptive purpose of substrate 10 shown in Fig. 2, does not limit through hole 103 during the present invention implements
Quantity and position, those skilled in the art can be according to general knowledge known in this field or common technology means
It is configured.
It is further preferred that the radius of through hole 103 may be configured as 0.1 millimeter～4 millimeters.Such as scheme
The radius of each through hole 103 in 2 may be configured as 2 millimeters.Certainly, substrate 10 shown in Fig. 2 is only
The purpose illustrated, does not limit the radius of through hole 103, art technology during the present invention implements
Personnel can be configured according to general knowledge known in this field or common technology means, such as 1 millimeter, 3
Millimeter, 3.5 millimeters etc..
The substrate 10 that the embodiment of the present invention provides passes through through hole 103 by the tree of glass substrate 101 both sides
Membrane of lipoprotein 102 integration couples, it is not necessary to other binding agents or fastening means, cost-effective, it is ensured that
Air-tightness that substrate 10 is good and water proofing property.
It is further preferred that in one embodiment of the invention, described substrate 10 is provided with envelope
Frame glue, the most described through hole 103 is arranged on the substrate regions that described sealed plastic box is peripheral.Outside sealed plastic box
Enclose and through hole 103 is set, it is ensured that air-tightness that substrate 10 is good and water proofing property, do not interfere with simultaneously
The circuit deposited on substrate 10 or element.
Further alternative, in one embodiment of the invention, as it is shown on figure 3, thin at resin
Polymer insulation film, conductive polymer membrane, inorganic compound may further be provided on film 103
The combination of one or more in film and pattern metal film.Can only exist in embodiments of the present invention
Resin film 103 arranges the one in above-mentioned membrane structure, it is also possible to above-mentioned film combinations set successively
Put on resin film 103, such as, polymer insulation film 104 be set on resin film 103,
Then pattern metal film 105 is set in polymer insulation layer 104 further.
Wherein, the forming method of polymer insulation thin film can refer to the forming method of resin film, no
Repeat again.The formation of inorganic compound film can use vacuum vapour deposition, oxidation reaction vapour deposition method,
Sputtering method, ion plating method, plasma chemical vapor phase process etc..Further, if being formed and containing
The inorganic thin film of silicon compound, it is possible to use the organo-silicon compound such as silane, tetramethoxy-silicane lead to
Cross CVD (Chemical Vapor Deposition, chemical gaseous phase deposits) method to be formed.The present invention implements
The substrate 10 that example provides, while having slimming and flexibility concurrently, may also provide other the most exhausted
The function such as edge, conduction.
Substrate 10 in the embodiment of the present invention, while having slimming and flexibility concurrently, may also provide
The functions such as other insulate accordingly, conduction.
Corresponding with aforesaid substrate, the embodiment of the present invention additionally provides a kind of base plate preparation method, as
Shown in Fig. 4, the method includes:
201, glass substrate is provided.
In this step, as shown in Figure 1, it is provided that glass substrate 101 can be Alborex M 12 glass or
The unorganic glasses such as alkali glass, but the invention is not restricted to this.
202, at least side of described glass substrate, resin film is formed.
As it is shown in figure 1, described resin film 102 is polymer resinous thin film.The kind of polymer
See previous embodiment, do not repeating.
In this step, polymer resin solution is first prepared.Then it is coated with on glass substrate 101
Cloth polymer resin solution.The coating method of polymer resin solution can be but be not limited to: air knife
Formula coating, scraper plate coating, scraper for coating, reversely coating, intaglio plate coating, spraying, slot coated,
Calendering coating, electro-deposition coating, dip-coating, letterpress, offset printing etc..
Finally the polymer resin solution of coating solidified or be dried or heat treatment etc. forms resin
Thin film 102.Such as by the method such as heat cure, ultraviolet light polymerization by molten for the fluoropolymer resin of coating
Liquid film-forming is fixed on above unorganic glass.Optionally, when using heat cure, heating-up temperature is
100～280 DEG C, heat time heating time is 10～90 minutes；Use ultraviolet light polymerization time, preferably 50～
500mJ/cm2Energy.
Now illustrate as a example by fluoropolymer resin polyimides (PI).First pass through adjacent benzene hexichol
Ether prepares polyimide solution with adjacent pyromellitic anhydride, then this solution is coated to glass substrate
Surface, at high temperature 200～230 DEG C, heat cure obtains resin film 102.
The base plate preparation method that the embodiment of the present invention provides a, it is provided that glass substrate 101, at glass
Form resin film 102 at least side of substrate 101, utilize the low water suction of glass substrate 101
The performance such as rate and low morphotropism makes the circuit deposited on the substrate 10 can keep the highest performance,
The resin film 102 arranged on glass substrate 101 adds the impact resistance of substrate 10 and soft
Toughness so that improve the flexibility of substrate 10 while ensureing substrate 10 slimming performance
Energy.
In another embodiment that the present invention provides, as it is shown in figure 5, described method includes:
301, glass substrate is provided.
As in figure 2 it is shown, glass substrate 101, the description to glass substrate 101 can be found in aforementioned side
Method embodiment, does not repeats them here.
302, on described glass substrate, at least one through hole is formed.
Such as, as in figure 2 it is shown, form four through holes 103, respectively position on glass substrate 101
At the corner of substrate 10.Optionally, if this method is additionally included on glass substrate 101 formation envelope
Frame glue, then at least one through hole 103 may be provided at the substrate regions that sealed plastic box is peripheral.It is optional again,
The through hole 103 that radius is 0.1 millimeter～4 millimeters can be formed.On it is, of course, understood that
State content by way of example only, do not limit quantity and the position of through hole 103 in the embodiment of the present invention.
303, forming resin film respectively in the both sides of described glass substrate, described resin film passes through
Described through hole integration couples.
When coating resin solution, resin solution flows in through hole 103, during film-forming,
Resin solution in the resin solution of substrate 101 both sides and through hole 103 is cured referred to as integrally, from
And couple the resin film 102 of glass substrate 101 both sides, as shown in Figure 2.
The base plate preparation method that the embodiment of the present invention provides is by forming through hole 103 by glass substrate
Resin film 102 integration of 101 both sides couples, it is not necessary to other binding agents or fastening means, joint
About cost, it is ensured that air-tightness that substrate 10 is good and water proofing property.
In another embodiment that the present invention provides, as shown in Figure 6, after step 202, institute
Method of stating also includes:
203, on described resin film, form polymer insulation film, conductive polymer membrane, inorganization
The combination of one or more in compound film and pattern metal film.
After forming resin film 102, on resin film 102, polymer can be formed further exhausted
One in velum, conductive polymer membrane, inorganic compound film or pattern metal film, it is possible to
So that above-mentioned film combinations is successively set on resin film 102, such as on resin film 102
Polymer insulation film 104 is set, then patterning is set in polymer insulation layer 104 further
Metal film 105.
Wherein, the forming method of polymer insulation thin film can refer to the forming method of resin film, no
Repeat again.The formation of inorganic compound film can use vacuum vapour deposition, oxidation reaction vapour deposition method,
Sputtering method, ion plating method, plasma chemical vapor phase process etc..Further, if being formed and containing
The inorganic thin film of silicon compound, it is possible to use the organo-silicon compound such as silane, tetramethoxy-silicane lead to
Cross CVD (Chemical Vapor Deposition, chemical gaseous phase deposits) method to be formed.The present invention implements
Base plate preparation method in example makes substrate 10 while having slimming and flexibility concurrently, also can carry
For functions such as other corresponding insulation, conductions.It should be noted that step 203 can also be in step
Carry out after rapid 303.
The above, the only detailed description of the invention of the present invention, but protection scope of the present invention is not
Be confined to this, any those familiar with the art in the technical scope that the invention discloses,
Change can be readily occurred in or replace, all should contain within protection scope of the present invention.Therefore, originally
The protection domain of invention should be as the criterion with described scope of the claims.
Claims (7)
1. a substrate, it is characterised in that including:
Glass substrate；
The both sides of described glass substrate are provided with resin film；
Described glass substrate is provided with at least one through hole, is arranged on described glass substrate both sides
Resin film coupled by the resin film integration that is solidificated in described through hole, it is not necessary to other glue
Knot agent or fastening means；
The radius of described through hole is 2 millimeters～4 millimeters.
Substrate the most according to claim 1, it is characterised in that
The thickness of described glass substrate is 20 microns～300 microns；The thickness of described resin film is
10 nanometers～10 microns.
Substrate the most according to claim 1, it is characterised in that be provided with envelope on described substrate
Frame glue, described through hole is arranged on the substrate regions that described sealed plastic box is peripheral.
Substrate the most according to claim 1, it is characterised in that
Described resin film is provided with polymer insulation film, conductive polymer membrane, inorganic chemical
The combination of one or more in thing film and pattern metal film.
5. the preparation method of a substrate, it is characterised in that including:
Glass substrate is provided；
Described glass substrate is formed at least one through hole；
It is respectively coated resin solution in the both sides of described glass substrate, when coating resin solution, tree
Lipoprotein solution flows in through hole, and during film-forming, the resin solution of glass substrate both sides is with logical
Resin solution curing in hole is integrally forming, so that the resin film one connection of glass substrate both sides
Connect, it is not necessary to other binding agents or fastening means；
The radius of described through hole is 2 millimeters～4 millimeters.
Method the most according to claim 5, it is characterised in that at the two of described glass substrate
After side forms resin film respectively, described method also includes:
Described glass substrate is formed sealed plastic box；
On described glass substrate, form at least one through hole described in then to include:
The substrate regions peripheral in described sealed plastic box forms at least one through hole.
Method the most according to claim 5, it is characterised in that at the two of described glass substrate
After side forms resin film respectively, also include:
Described resin film is formed polymer insulation film, conductive polymer membrane, inorganic compound
The combination of one or more in film and pattern metal film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210385062.XA CN102891115B (en) | 2012-10-11 | 2012-10-11 | Substrate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210385062.XA CN102891115B (en) | 2012-10-11 | 2012-10-11 | Substrate and preparation method thereof |
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| Publication Number | Publication Date |
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| CN102891115A CN102891115A (en) | 2013-01-23 |
| CN102891115B true CN102891115B (en) | 2016-08-17 |
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| CN201210385062.XA Active CN102891115B (en) | 2012-10-11 | 2012-10-11 | Substrate and preparation method thereof |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105185809B (en) * | 2015-08-03 | 2018-09-11 | 深圳市华星光电技术有限公司 | Production method, flexible glass substrate and the flexible display screen of flexible display screen |
| CN113991004A (en) * | 2021-10-26 | 2022-01-28 | 东莞市中麒光电技术有限公司 | LED substrate manufacturing method, LED substrate, LED device manufacturing method and LED device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010044291A1 (en) * | 2008-10-17 | 2010-04-22 | シャープ株式会社 | Display device and method for manufacturing the same |
| CN102015287A (en) * | 2008-04-24 | 2011-04-13 | 日东电工株式会社 | Flexible substrate |
| CN102347453A (en) * | 2010-07-28 | 2012-02-08 | 三星移动显示器株式会社 | Display device and organic light emitting diode display device |
| CN202796906U (en) * | 2012-10-11 | 2013-03-13 | 京东方科技集团股份有限公司 | Substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101954702B (en) * | 2009-07-14 | 2013-05-29 | 比亚迪股份有限公司 | Glass product and production method thereof |
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2012
- 2012-10-11 CN CN201210385062.XA patent/CN102891115B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102015287A (en) * | 2008-04-24 | 2011-04-13 | 日东电工株式会社 | Flexible substrate |
| WO2010044291A1 (en) * | 2008-10-17 | 2010-04-22 | シャープ株式会社 | Display device and method for manufacturing the same |
| CN102347453A (en) * | 2010-07-28 | 2012-02-08 | 三星移动显示器株式会社 | Display device and organic light emitting diode display device |
| CN202796906U (en) * | 2012-10-11 | 2013-03-13 | 京东方科技集团股份有限公司 | Substrate |
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| CN102891115A (en) | 2013-01-23 |
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