CN102888655B - Middle-infrared laser gain medium codoped bivalent chromium and cobalt ion II-VI crystal - Google Patents
Middle-infrared laser gain medium codoped bivalent chromium and cobalt ion II-VI crystal Download PDFInfo
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- CN102888655B CN102888655B CN201210390553.3A CN201210390553A CN102888655B CN 102888655 B CN102888655 B CN 102888655B CN 201210390553 A CN201210390553 A CN 201210390553A CN 102888655 B CN102888655 B CN 102888655B
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Abstract
The invention relates to a preparation method of a middle-infrared laser gain medium codoped bivalent chromium and cobalt ion II-VI crystal and a laser output experiment device constructed based on the crystal, belonging to the field of all solid-state laser media. The laser gain medium codoped bivalent chromium and cobalt ion II-VI crystal is prepared through a method of arranging dopants at both ends of an ampoule and performing vacuum heat diffusion transmission or a method of plating dopant films at both sides of a crystal and performing vacuum heat diffusion transmission, and pumping is performed by utilizing the overlapped absorption wavelength of bivalent chromium and cobalt codoped ions, so that the two ions can be simultaneously excited, thereby obtaining middle-infrared wide-spectrum tunable laser output. The laser output experiment device provided by the invention uses the codoped bivalent chromium and cobalt ion II-VI crystal as the laser output medium, and can realize the middle-infrared wide-spectrum tunable laser output of 1.6-4.2 mu m.
Description
Technical field
The present invention relates to all-solid state laser gain media technology, particularly relate to a kind of in the preparation method of infrared wide range tunable laser gain media codope bivalent chromium and cobalt ion II-VI crystal, belong to all-solid state laser media application.
Background technology
Along with the development of various optical testing technology, the demand for of many uses, cheap mid-infrared laser light source increases just day by day.The wavelength of middle infrared laser can cover in " molecular fingerprint district ", it has purposes widely, comprises the Military Application such as atmospheric remote sensing test, non-nocuity medical diagnosis, lidar, petroleum prospecting and various such as target designation, failture evacuation and infrared counter.
The light source that can realize middle-infrared band Laser output mainly contains: CO
2gas laser, its output wavelength of the heterogeneous joint laser apparatus of its output wavelength 10 ~ 12 μm, lead salt 3 ~ 30 μm, its output wavelength of quanta cascaded semiconductor laser are more than or equal to 3.7 μm, or realized the light source of middle-infrared band Laser output by the nonlinear optics switch technology of relative complex, as difference frequency generation laser apparatus (DFG), optical parameter oscillating laser (OPO) etc.But above mid-infrared laser light source all encounters the basic problem limiting it and use as sturdy and durable, low cost mid-infrared laser light source, as CO
2gas laser equipment is complicated and huge, and difference frequency generation laser apparatus and optical parameter oscillating laser etc. all need to use expensive optics, and also unstable; The laser output power of lead salt heterogeneous joint laser apparatus and quanta cascaded semiconductor laser is lower.Therefore, up to now, the defect that the above laser light source exists makes it still to be used in the high-power application such as such as remote sensing test.
Formed with above-mentioned laser light source and contrast, based on transition metal ion (TM
2+) adulterate II--all solid state laser of VI crystal ZnS, ZnSe, CdS and CdSe etc. becomes that wide range is tunable, superpower, high stability mid-infrared laser light source just gradually.To transition metal ion (TM
2+), as Cr
2+, Co
2+, Fe
2+the studying in great detail of II-VI crystal of doping starts from the sixties in last century.Can deep energy level be formed after transition metal ion enters semi-conductor in its energy gap, but also there will be multiple valence state, in therefore early stage research, regard this foreign ion as fluorescence " jinx ".Although this II-VI crystal being also doped transition metal ions causes the sizable interest of people, its laser effect just has the reason of report to the nineties in last century.In the mid-90 in 20th century; people (the L.D. DeLoach such as the De Loach of Lawrence Livermore National Laboratory of the U.S.; R.H. Page; G.D. Wilke; S.A. Payne; W.F. Krupke, Transition metal-doped zinc chalcogenides:Spectroscopy and laser demonstration of a new class of gain media, Journal Name:IEEE Journal of Quantum Electronics; Journal Volume:32; Journal Issue:6; Other Information:PBD:Jun 1996, (1996) Medium:X; Size:pp. 885-895.) report the breakthrough of the II-VI Crystal study of doped transition metal ions at first: they have studied Cr
2+, Co
2+, Ni
2+and Fe
2+the absorption of the various zinc chalcogenides of doping and emission characteristic, think that this compounds gets a good chance of becoming the potential quality of mid-infrared laser medium, and based on Cr
2+: ZnSe and Cr
2+: ZnS at room temperature achieves the Laser output of 2.4 μm.
Conventional II-VI crystal mainly contains ZnS and ZnSe.II-VI crystal has excellent thermomechanical property, and have again stronger thermal shock resistance and excellent heat-conductive characteristic, this just provides prerequisite for doped transition metal ions II-VI crystal laser in the application on high-power.
As for spectroscopy and laser performance, doped transition metal ions II-VI crystal is in close proximity to titanium-doped sapphire (Ti-S) laser apparatus.Can expect, be similar to titanium-doped sapphire laser, the II-VI crystal of doped transition metal ions can be luminous by diversified mode of oscillation, and have the advantages such as the pump-coupling of available InGaAsP or InGaNAs diode array.The people such as Fazzio are to the Calculation and Study of multiplicity energy level and experimentally to the V adulterated in ZnS, ZnSe
2+, Cr
2+, Mn
2+, Fe
2+, Co
2+, Ni
2+the checking of the low decay energy level of ion all explains most research and all concentrates on Cr
2+, Co
2+, Fe
2+the reason of ion.Cr
2+, Co
2+, Fe
2+the spectral range of ion is 2 ~ 3 μm, 2.6 ~ 4 μm and 3.7 ~ 5.2 μm respectively, has wider tunable range.The light source that this kind of laser apparatus sends represents now the most simply, the most economical mid-infrared laser light source.
Although the II-VI laser medium for doped transition metal ions has had comparatively deep research, utilize codope or many containing transition metals ion to mix but to rarely have with the research increasing the humorous gain medium scope of lasers A tunable into II-VI crystal and related to.
Summary of the invention
The object of the invention is to provide a kind of in the preparation method of infrared wide range tunable laser gain media codope bivalent chromium and cobalt ion II-VI crystal; This codope bivalent chromium and cobalt ion II-VI crystal utilize ampoule both-end to put hotchpotch vacuum heat diffusion transmission method, or utilize crystal two-sided plating hotchpotch film vacuum thermodiffusion transmission method; Carry out pumping by the absorbing wavelength that bivalent chromium is overlapping with cobalt codope ion again, two kinds of ions can be realized simultaneously and be excited to excite, thus obtain in infrared wide range tunable laser gain media-codope bivalent chromium and cobalt ion II-VI crystal.The invention provides Tunable Infrared Laser gain media in the wide band that this novel doped crystal is expected to become desirable completely.
Another object of the present invention be to provide a kind of based in the Laser output experimental installation that builds of infrared wide range tunable laser gain media codope bivalent chromium and cobalt ion II-VI crystal, this experimental installation adopts codope bivalent chromium and cobalt ion II-VI crystal as Laser output medium, realizes the band tunable Laser output of infrared broad spectrum in 1.6 ~ 4.2 μm.
For achieving the above object, the present invention is that the technical scheme adopting following technical measures to form realizes.
The preparation method of a kind of mid-infrared laser gain media of the present invention codope bivalent chromium and cobalt ion II-VI crystal, it is characterized in that utilizing ampoule both-end to put hotchpotch vacuum heat diffusion transmission method prepares codope bivalent chromium and cobalt ion II-VI crystal, comprises following concrete technology step:
(1) by II--VI crystal thin discs, be placed in by the middle of the small in the end and big in the middle quartz ampoule be made up of three sections of silica tubes, get the two ends that simple substance Co powder and simple substance Cr powder are placed in quartz ampoule respectively, and Co and Cr two kinds of elemental powders are separately with II--the distance between VI crystal thin discs is equal;
(2) quartz ampoule of described for step (1) three sections of silica tubes composition is utilized oxyhydrogen flame high temperature adhesives together, and to be vacuumized be 10
-3~ 10
-5seal after Pa;
(3) be positioned over by the quartz ampoule of step (2) good seal by organizing in the High Temperature Furnaces Heating Apparatus of heating rod heating, be under the condition of 700 ~ 1300 DEG C in temperature, thermodiffusion 1 ~ 15 day, obtains codope bivalent chromium and cobalt ion II-VI crystal gain medium sample more;
(4) bivalent chromium of finally step (3) having been adulterated and cobalt ion II-VI crystal gain medium sample carry out polishing, cutting, infrared wide range tunable laser gain media codope Cr in namely obtaining
2+, Co
2+: II--VI crystal.
In such scheme, described II--VI crystal thin discs is ZnS or ZnSe or ZnTe or CdS or CdSe or CdTe crystal thin discs.
In such scheme, described simple substance cobalt powder and its purity of simple substance chromium powder end are more than 99.99%; Described II--VI its purity of crystal thin discs is more than 99.999%.
In such scheme, the concentration of described dopant ion is respectively Cr
2+be 1 × 10
18cm
-3~ 1 × 10
20cm
-3, Co
2+be 1 × 10
18cm
-3~ 1 × 10
20cm
-3.
The preparation method of infrared wide range tunable laser gain media codope bivalent chromium and cobalt ion II-VI crystal during the present invention is a kind of, it is characterized in that utilizing the two-sided chromium plating film of crystal and cobalt thin film vacuum heat diffusion legal system for codope bivalent chromium and cobalt ion II-VI crystal, comprise following concrete technology step:
(1) utilizing sputtering method or vapour deposition method II--two crystal faces of VI crystal thin discs plate simple substance Co film and simple substance Cr film respectively, and its two crystal face plating film thickness is 100 ~ 500nm;
(2) step (1) having been plated II of film--VI crystal thin discs puts into quartz ampoule, and to be vacuumized be 10
-3~ 10
-5seal after Pa;
(3) quartz ampoule of step (2) good seal is positioned over by organizing in the High Temperature Furnaces Heating Apparatus of heating rod heating more, be under the condition of 700 ~ 1300 DEG C in temperature, thermodiffusion 1 ~ 15 day, namely obtains codope bivalent chromium and cobalt ion II-VI crystal gain medium sample;
(4) bivalent chromium of finally step (3) having been adulterated and cobalt ion II-VI crystal gain medium sample carry out polishing, cutting, infrared wide range tunable laser gain media codope Cr in namely obtaining
2+, Co
2+: II--VI crystal.
In such scheme, described II--VI crystal thin discs is ZnS or ZnSe or ZnTe or CdS or CdSe or CdTe crystal thin discs.
In such scheme, described simple substance cobalt film and its purity of simple substance chromium thin film are more than 99.99%; Described II--the purity of VI crystal thin discs is more than 99.999%.
In such scheme, the concentration of described dopant ion is respectively Cr
2+be 1 × 10
18cm
-3~ 1 × 10
20cm
-3, Co
2+be 1 × 10
18cm
-3~ 1 × 10
20cm
-3.
The present invention a kind of based in the Laser output experimental installation that builds of infrared wide range tunable laser gain media codope bivalent chromium and cobalt ion II-VI crystal, it is characterized in that comprising laser pumping source, pump beam, watertight chest, sealing light hole, input cavity mirror, gain medium, output cavity mirror, Output of laser light beam; The pump beam exported from laser pumping source enters input cavity mirror by the sealing light hole of watertight chest, pump beam arrives gain medium through input cavity mirror, gain media produces light conversion and realizes light amplification, then output cavity mirror is arrived, through the laser of output cavity mirror again through the sealing light hole Output of laser light velocity.
In such scheme, described pump beam wavelength is 1.4 ~ 1.8 μm; Output of laser light beam wavelength 1.6 ~ 4.2 μm, for making pump beam full impregnated cross and Output of laser total reflection, its input cavity mirror plated film; For making Output of laser light beam more than 90% reflect, its output cavity mirror also plated film.
The feature that the present invention has and useful technique effect as follows:
The present invention utilizes bivalent chromium and cobalt ion codope II--VI crystal, obtain desirable in infrared wide band tunable laser gain media; Its preparation method processing step is simple, easy handling and realization; The Cr of infrared wide range wave band tunable laser gain media in having
2+and Co
2+the Laser output experimental installation that codope II-VI crystal builds, infrared wide range tunable laser in exportable 1.6 ~ 4.2 μm; Thus significantly can increase the humorous gain medium scope of lasers A tunable.
Ultimate principle of the present invention is: utilize ampoule both-end to put hotchpotch vacuum heat diffusion transmission method, or utilizes crystal two-sided plating hotchpotch film vacuum thermodiffusion transmission method, prepares Cr
2+and Co
2+codope II--VI crystal; The absorbing wavelength recycling bivalent chromium overlapping with cobalt codope ion carries out pumping to gain media, can realize two kinds of ions simultaneously and be excited to excite, thus in obtaining 1.6 ~ 4.2 μm, infrared wide range tunable laser exports.Due to the Cr that infrared wide range tunable laser in provide 1.6 ~ 4.2 μm exports
2+and Co
2+codope II-VI crystal laser gain media, in this laser medium, Cr
2+'s
5e →
5t
2transition absorption wavelength 1.4 ~ 1.8 μm and Co
2+'s
4a
2(F) →
4t
1(F) transition absorption wavelength 1.2 ~ 2.0 μm has overlapping wave band 1.4 ~ 1.8 μm, therefore utilizes a certain wavelength in overlapping range, as 1.55 μm, carry out pumping just can realize simultaneously two kinds of ions be excited excite; Cr
2+fluorescence spectra be 1.6 ~ 2.8 μm, Co
2+fluorescence spectrum be 2.6 ~ 4.2 μm, thus obtain 1.6 ~ 4.2 μm of wide spectral tunable lasers and export.The Cr of doping
2+and Co
2+interaction between ion with surrounding ions is stronger, its electronic state parameter and crystal closely related, different crystal causes tunable laser output area also to have difference.Specifically, Cr
2+, Co
2+: ZnS tunable laser output area is 1.6 ~ 3.6 μm, Cr
2+, Co
2+: ZnSe is 1.8 ~ 3.8 μm, Cr
2+, Co
2+: CdS is 2.0 ~ 3.9 μm, Cr
2+, Co
2+: CdSe is 2.2 ~ 4.2 μm.
Accompanying drawing explanation
Quartz ampoule both-end is utilized to put infrared wide range tunable laser gain media bivalent chromium and cobalt ion codope Cr in the preparation of hotchpotch vacuum heat diffusion transmission method in Fig. 1 embodiment of the present invention 1 and embodiment 2
2+, Co
2+: ZnSe crystal and Cr
2+, Co
2+: CdS crystallization process schematic diagram;
Infrared wide range tunable laser gain media bivalent chromium and cobalt ion codope Cr in the preparation of crystal two-sided plating hotchpotch film vacuum heat diffusion transmission method is passed through in Fig. 2 embodiment of the present invention 3 and embodiment 4
2+, Co
2+: ZnTe crystal and Cr
2+, Co
2+: CdTe crystallization process schematic diagram;
Fig. 3 embodiment of the present invention 5 based in infrared wide range tunable laser gain media bivalent chromium and cobalt ion codope Cr
2+, Co
2+: the Laser output experimental installation structural representation that ZnSe crystal builds.
In figure, 1 Co powder, 2 heating rods, 3 quartz ampoules, 4 crystal thin discs, 5 Cr powder, 6 Cr films, 7 Co films, 8 laser pumping sources, 9 pump beams, 10 watertight chests, 11 sealing light holes, 12 input cavity mirrors, 13 gain mediums, 14 output cavity mirrors, 15 Output of laser light beams.
Embodiment
With specific embodiment, the present invention is described in further detail below in conjunction with accompanying drawing, but is not meant to be any restriction the present invention being protected to content.
Embodiment 1:
Utilize ampoule both-end to put hotchpotch vacuum heat diffusion transmission method and prepare Cr
2+, Co
2+: ZnSe crystal
This example selects Cr
2+, Co
2+: ZnSe is as preparation Cr
2+, Co
2+: the raw material of ZnSe crystal, the ZnSe crystal of the simple substance chromium powder of purity more than 99.99% and cobalt powder and purity more than 99.999%.
In this example, select its purity be more than 99.99% simple substance Cr powder 5 and simple substance Co powder 1 and its purity be that the ZnSe crystal thin discs 4 of more than 99.999% is as preparation Cr
2+, Co
2+: the raw material of ZnSe codope crystal.
First by one piece of ZnSe crystal thin discs 4, its diameter 2 cm, thickness 0.2 cm, be placed in by the small in the end and big in the middle three sections of quartz ampoule that silica tube forms 3 mid-ways, get simple substance Co powder 1 and simple substance Cr powder 5 again, its weight is respectively 0.1 g, be placed in quartz ampoule 3 end positions respectively, the simple substance Co powder at described quartz ampoule 3 two ends is equal with the distance between the ZnSe crystal thin discs in the middle of quartz ampoule 3 respectively with simple substance Cr powder placement location, then oxyhydrogen flame high temperature is utilized, three sections of silica tubes are bonded together, and to be vacuumized be 10
-5seal after Pa, as shown in Fig. 1; The quartz ampoule 3 of good seal being positioned over by organizing in High Temperature Furnaces Heating Apparatus that heating rod 2 heats more, being thermodiffusion 15 days under the condition of 700 DEG C in temperature, obtaining codope Cr
2+, Co
2+: ZnSe crystal laser gain media sample, the concentration of its dopant ion is respectively Cr
2+be 1 × 10
18cm
-3, Co
2+be 1 × 10
18cm
-3~ 1 × 10
18cm
-3; The codope Cr finally will adulterated
2+, Co
2+: ZnSe crystal laser gain media sample carries out polishing, and cutting, obtains fine quality gain medium Cr
2+, Co
2+: ZnSe crystal.
Embodiment 2:
Utilize ampoule both-end to put hotchpotch vacuum heat diffusion transmission method and prepare Cr
2+, Co
2+: CdS crystal
In this example, select its purity be more than 99.99% simple substance Cr powder 5 and simple substance Co powder 1 and purity be that the CdS crystal thin discs 4 of more than 99.999% is as preparation Cr
2+, Co
2+: the raw material of CdS codope crystal.
First by one piece of CdS crystal thin discs 4, its diameter 2 cm, thickness 0.2 cm, be placed in by the small in the end and big in the middle three sections of quartz ampoule that silica tube forms 3 mid-ways, get simple substance Co powder 1 and simple substance Cr powder 5 again, its weight is respectively 0.3 g, be placed in quartz ampoule 3 end positions respectively, the simple substance Co powder at described quartz ampoule 3 two ends is equal with the distance between the CdS crystal thin discs 4 in the middle of quartz ampoule 3 respectively with simple substance Cr powder placement location, then oxyhydrogen flame high temperature is utilized, three sections of silica tubes are bonded together, and to be vacuumized be 10
-5seal after Pa, as shown in Figure 1; The quartz ampoule 3 of good seal being positioned over by organizing in High Temperature Furnaces Heating Apparatus that heating rod 2 heats more, being thermodiffusion 2 days under the condition of 1300 DEG C in temperature, obtaining codope Cr
2+, Co
2+: CdS crystal laser gain media sample, the concentration of its dopant ion is respectively Cr
2+be 1 × 10
20cm
-3, Co
2+be 1 × 10
18cm
-3~ 1 × 10
20cm
-3; The codope Cr finally will adulterated
2+, Co
2+: CdS crystal laser gain media sample carries out polishing, and cutting, obtains the Cr of fine quality gain medium
2+, Co
2+: CdS crystal.
Embodiment 3:
Crystal two-sided plating hotchpotch film vacuum thermodiffusion transmission method is utilized to prepare Cr
2+, Co
2+: ZnTe crystal
In this example, select its purity be more than 99.99% simple substance Cr powder 5 be that the ZnTe crystal thin discs 4 of more than 99.999% is as preparing Cr with simple substance Co powder 1 and purity
2+, Co
2+: the raw material of ZnTe codope crystal.
First utilize sputtering film coating method at diameter 2 cm, two crystal faces of the ZnTe crystal thin discs 4 of thickness 2mm plate simple substance Co film 7 and Cr film 6 respectively, coating film thickness is 100 nm, the ZnTe crystal thin discs 4 of plated film is put into quartz ampoule 3, is vacuumized by quartz ampoule 3 and be about 10
-5pa, then seals, as shown in Figure 2; Quartz ampoule 3 after having sealed is positioned over by organizing in High Temperature Furnaces Heating Apparatus that heating rod 2 heats more, is thermodiffusion 13 days under the condition of 900 DEG C, obtains codope Cr in temperature
2+, Co
2+: ZnTe crystal laser gain media sample, the concentration of its dopant ion is respectively Cr
2+be 1 × 10
20cm
-3, Co
2+be 1 × 10
20cm
-3; The codope Cr finally will adulterated
2+, Co
2+: ZnTe crystal laser gain media sample carries out polishing, cutting, obtains fine quality gain medium Cr
2+, Co
2+: ZnTe crystal.
Embodiment 4:
Crystal two-sided plating hotchpotch film vacuum thermodiffusion transmission method is utilized to prepare Cr
2+, Co
2+: CdTe crystal
In this example, select purity be more than 99.99% simple substance Cr powder 5 and simple substance Co powder 1 and purity be that the CdTe crystal of more than 99.999% is as preparation Cr
2+, Co
2+: the raw material of CdTe codope crystal.
First utilize vapour deposition method at diameter 2 cm, two crystal faces of the CdTe crystal thin discs 4 of thickness 2mm plate simple substance Co film 7 and Cr film 6 respectively, coating film thickness is 500 nm, the CdTe crystal thin discs 4 plating film is put into quartz ampoule 3, is vacuumized by quartz ampoule 3 and be about 10
-5pa, then seals, as shown in Figure 2; Quartz ampoule 3 after having sealed is positioned over by organizing in High Temperature Furnaces Heating Apparatus that heating rod 2 heats more, is thermodiffusion 1 day under the condition of 1300 DEG C, obtains codope Cr in temperature
2+, Co
2+: CdTe crystal laser gain media sample, the concentration of its dopant ion is respectively Cr
2+be 1 × 10
20cm
-3, Co
2+be 1 × 10
20cm
-3; The codope Cr finally will adulterated
2+, Co
2+: CdTe crystal laser gain media sample carries out polishing, cutting, obtains fine quality gain medium Cr
2+, Co
2+: CdTe crystal.
The present invention a kind of based in the Laser output experimental installation that builds of infrared wide range tunable laser gain media codope bivalent chromium and cobalt ion II-VI crystal, as shown in Figure 3, comprise laser pumping source 8, pump beam 9, watertight chest 10, sealing light hole 11, input cavity mirror 12, gain medium 13, output cavity mirror 14, Output of laser light beam 15; The pump beam 9 exported from laser pumping source 8 enters input cavity mirror 12 by the sealing light hole 11 of watertight chest 10, pump beam 9 arrives the gain medium 13 by codope bivalent chromium and cobalt ion II-VI crystal after input cavity mirror 12, then output cavity mirror 14 is arrived, through the laser of output cavity mirror 14 again through sealing light hole 11 Output of laser light beam 15.
Embodiment 5:
The gain medium Cr of one of them high-quality that above-mentioned preparation method obtains by the present invention
2+, Co
2+: ZnSe crystal, as in Laser output experimental installation, absorption spectrum and emmission spectrum are studied; Here concrete Cr is determined
2+, Co
2+: the pumping wavelength of ZnSe crystal is 1.55 μm, Cr
2+, Co
2+: the emission wavelength of ZnSe crystal is 1.8 ~ 3.7 μm.Select flat-concave cavity as laser resonant cavity mirror, adopt semiconductor laser (LD) to carry out pumping as pumping source, the tunable mid-infrared laser realizing 1.8 ~ 3.7 μm exports.For the wavelength 3.2 μm of Output of laser, the Laser Resonator System designed.As shown in Figure 3, laser pumping source 8 wavelength is 1.55 μm, the pump beam 9 of output, its input cavity mirror 12 plated film, and to 1.55 μm of full impregnated mistakes, to 3.2 mum wavelength light total reflections, gain medium 13 is Cr
2+, Co
2+: ZnSe, its output cavity mirror 14 plated film, reflects 3.2 mum wavelengths 90%, and its output wavelength of Output of laser 15 is 3.2 μm.It should be noted that; when Output of laser selects output wavelength to be near 2.9 μm; be in the strong absorption band of water; therefore need in Laser Experiments device to get rid of aqueous vapor to the impact of laserresonator, now laserresonator can be placed in vacuum or laserresonator be filled shielding gas and can eliminate this impact in watertight chest 10.
Claims (10)
1. the preparation method of infrared wide range tunable laser gain media codope bivalent chromium and cobalt ion II-VI crystal in a kind, it is characterized in that utilizing ampoule both-end to put hotchpotch vacuum heat diffusion transmission method prepares codope bivalent chromium and cobalt ion II-VI crystal, comprises following concrete technology step:
(1) by II-VI crystal thin discs (4), be placed in by the middle of the small in the end and big in the middle quartz ampoule (3) be made up of three sections of silica tubes, get the two ends that simple substance Co powder (1) and simple substance Cr powder (5) are placed in quartz ampoule (3) respectively, and Co and Cr two kinds of elemental powders are equal with the distance between II-VI crystal thin discs separately;
(2) quartz ampoule (3) of described for step (1) three sections of silica tubes composition is utilized oxyhydrogen flame high temperature adhesives together, and to be vacuumized be 10
-3~ 10
-5seal after Pa;
(3) quartz ampoule (3) of step (2) good seal is positioned over by organizing in High Temperature Furnaces Heating Apparatus that heating rod (2) heats more, be under the condition of 700 ~ 1300 DEG C in temperature, thermodiffusion 1 ~ 15 day, obtains codope bivalent chromium and cobalt ion II-VI crystal gain medium sample;
(4) bivalent chromium of finally step (3) having been adulterated and cobalt ion II-VI crystal gain medium sample carry out polishing, cutting, infrared wide range tunable laser gain media codope Cr in namely obtaining
2+, Co
2+: II-VI crystal.
2. the preparation method of codope bivalent chromium according to claim 1 and cobalt ion II-VI crystal, is characterized in that described II-VI crystal thin discs (4) is ZnS or ZnSe or ZnTe or CdS or CdSe or CdTe crystal thin discs.
3. the preparation method of codope bivalent chromium according to claim 1 and cobalt ion II-VI crystal, is characterized in that described simple substance cobalt powder (1) and simple substance chromium powder end (5) its purity are more than 99.99%; Described II-VI crystal thin discs (4) its purity is more than 99.999%.
4. the preparation method of codope bivalent chromium and cobalt ion II-VI crystal according to claim 1 or 3, is characterized in that the concentration of described dopant ion is respectively Cr
2+be 1 × 10
18cm
-3~ 1 × 10
20cm
-3, Co
2+be 1 × 10
18cm
-3~ 1 × 10
20cm
-3.
5. the preparation method of infrared wide range tunable laser gain media codope bivalent chromium and cobalt ion II-VI crystal in a kind, it is characterized in that utilizing the two-sided chromium plating film of crystal and cobalt thin film vacuum heat diffusion legal system for codope bivalent chromium and cobalt ion II-VI crystal, comprise following concrete technology step:
(1) utilize sputtering method or vapour deposition method to plate simple substance Co film (7) and simple substance Cr film (6) respectively at two crystal faces of II-VI crystal thin discs (4), its two crystal face plating film thickness is 100 ~ 500nm;
(2) II-VI crystal thin discs (4) step (1) having been plated film puts into quartz ampoule (3), and to be vacuumized be 10
-3~ 10
-5seal after Pa;
(3) quartz ampoule (3) of step (2) good seal is positioned in High Temperature Furnaces Heating Apparatus, be under the condition of 700 ~ 1300 DEG C in temperature, thermodiffusion 1 ~ 15 day, obtains codope bivalent chromium and cobalt ion II-VI crystal gain medium sample;
(4) bivalent chromium of finally step (3) having been adulterated and cobalt ion II-VI crystal gain medium sample carry out polishing, cutting, infrared wide range tunable laser gain media codope Cr in namely obtaining
2+, Co
2+: II-VI crystal.
6. the preparation method of codope bivalent chromium according to claim 5 and cobalt ion II-VI crystal, is characterized in that described II-VI crystal thin discs (4) is ZnS or ZnSe or ZnTe or CdS or CdSe or CdTe crystal thin discs.
7. the preparation method of codope bivalent chromium according to claim 5 and cobalt ion II-VI crystal, is characterized in that described simple substance cobalt film (7) and simple substance chromium thin film (6) its purity are more than 99.99%; The purity of described II-VI crystal thin discs (4) is more than 99.999%.
8. the preparation method of codope bivalent chromium and cobalt ion II-VI crystal according to claim 5 or 7, is characterized in that the concentration of described dopant ion is respectively Cr
2+be 1 × 10
18cm
-3~ 1 × 10
20cm
-3, Co
2+be 1 × 10
18cm
-3~ 1 × 10
20cm
-3.
9. the Laser output experimental installation that in, infrared wide range tunable laser gain media codope bivalent chromium and cobalt ion II-VI crystal build, is characterized in that comprising laser pumping source (8), pump beam (9), watertight chest (10), sealing light hole (11), input cavity mirror (12), gain medium (13), output cavity mirror (14), Output of laser light beam (15); The pump beam (9) exported from laser pumping source (8) enters input cavity mirror (12) by the sealing light hole (11) of watertight chest (10), pump beam (9) arrives gain medium (13) through input cavity mirror (12), then arrive output cavity mirror (14), through output cavity mirror (14) laser again through sealing light hole (11) Output of laser light beam (15).
10. Laser output experimental installation according to claim 9, is characterized in that described pump beam (9) wavelength is 1.4 ~ 1.8 μm; Output of laser light beam (15) wavelength is 1.6 ~ 4.2 μm; Input cavity mirror (12) and output cavity mirror (14) all plated films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210390553.3A CN102888655B (en) | 2012-10-16 | 2012-10-16 | Middle-infrared laser gain medium codoped bivalent chromium and cobalt ion II-VI crystal |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210390553.3A CN102888655B (en) | 2012-10-16 | 2012-10-16 | Middle-infrared laser gain medium codoped bivalent chromium and cobalt ion II-VI crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102888655A CN102888655A (en) | 2013-01-23 |
| CN102888655B true CN102888655B (en) | 2015-04-08 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1326018A (en) * | 2000-05-19 | 2001-12-12 | 住友电气工业株式会社 | Heat treatment of ZnSe crystal substrates, heat treated substrates and optical emitter |
| CN202872171U (en) * | 2012-10-16 | 2013-04-10 | 四川大学 | Laser output experimental device constructed by intermediate infrared wide spectrum tunable laser gain medium |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1326018A (en) * | 2000-05-19 | 2001-12-12 | 住友电气工业株式会社 | Heat treatment of ZnSe crystal substrates, heat treated substrates and optical emitter |
| CN202872171U (en) * | 2012-10-16 | 2013-04-10 | 四川大学 | Laser output experimental device constructed by intermediate infrared wide spectrum tunable laser gain medium |
Non-Patent Citations (2)
| Title |
|---|
| Growth of Cr- and Co-Doped CdSe Crystals from High-Temperature Selenium Solutions;O.O. ADETUNJI et al;《Journal of ELECTRONIC MATERIALS》;20021231;第31卷(第7期);795-798 * |
| Material synthesis and infrared optical properties of transition metal doped binary and ternary II-VI semiconductors;U. Hommerich;《Materials Research Society》;20061231;第891卷;103-108 * |
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