CN102888655A - Middle-infrared laser gain medium codoped bivalent chromium and cobalt ion II-VI crystal - Google Patents
Middle-infrared laser gain medium codoped bivalent chromium and cobalt ion II-VI crystal Download PDFInfo
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- CN102888655A CN102888655A CN2012103905533A CN201210390553A CN102888655A CN 102888655 A CN102888655 A CN 102888655A CN 2012103905533 A CN2012103905533 A CN 2012103905533A CN 201210390553 A CN201210390553 A CN 201210390553A CN 102888655 A CN102888655 A CN 102888655A
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Abstract
The invention relates to a preparation method of a middle-infrared laser gain medium codoped bivalent chromium and cobalt ion II-VI crystal and a laser output experiment device constructed based on the crystal, belonging to the field of all solid-state laser media. The laser gain medium codoped bivalent chromium and cobalt ion II-VI crystal is prepared through a method of arranging dopants at both ends of an ampoule and performing vacuum heat diffusion transmission or a method of plating dopant films at both sides of a crystal and performing vacuum heat diffusion transmission, and pumping is performed by utilizing the overlapped absorption wavelength of bivalent chromium and cobalt codoped ions, so that the two ions can be simultaneously excited, thereby obtaining middle-infrared wide-spectrum tunable laser output. The laser output experiment device provided by the invention uses the codoped bivalent chromium and cobalt ion II-VI crystal as the laser output medium, and can realize the middle-infrared wide-spectrum tunable laser output of 1.6-4.2 mu m.
Description
Technical field
The present invention relates to all-solid state laser gain media technology, relate in particular to a kind of in the preparation method of infrared wide range tunable laser gain media codope divalence chromium and cobalt ion II-VI crystal, belong to all-solid state laser medium field.
Background technology
Along with the development of various optical testing technologies, just day by day increase for the demand of of many uses, cheap mid-infrared laser light source.The wavelength of middle infrared laser can cover " molecular fingerprint district ", it has widely purposes, comprises atmospheric remote sensing test, non-nocuity medical diagnosis, lidar, petroleum prospecting and various Military Application such as target demarcation, fault eliminating and infrared rays antagonism.
The light source that can realize the middle-infrared band Laser output mainly contains: CO
2Gas laser, its output wavelength 10～12 μ m, its output wavelength of the heterogeneous joint laser apparatus of lead salt 3～30 μ m, its output wavelength of quanta cascaded semiconductor laser are more than or equal to 3.7 μ m, perhaps realize the light source of middle-infrared band Laser output by the nonlinear optics switch technology of relative complex, such as difference frequency generation laser apparatus (DFG), optical parameter oscillating laser (OPO) etc.But above mid-infrared laser light source has all run into and has limited the basic problem that it uses as sturdy and durable, low-cost mid-infrared laser light source, such as CO
2Gas laser equipment is complicated and huge, and difference frequency generation laser apparatus and optical parameter oscillating laser etc. all need to use expensive optics, and also unstable; The laser output power of the heterogeneous joint laser apparatus of lead salt and quanta cascaded semiconductor laser is lower.Therefore, up to now, the defective that the above laser light source exists makes it still can not be used in such as high-power application such as remote sensing tests.
With above-mentioned laser light source forms contrast be, based on transition metal ion (TM
2+) all solid state laser of II-VI crystal ZnS, ZnSe, CdS and the CdSe etc. that mix becomes just gradually that wide range is tunable, superpower, high stability mid-infrared laser light source.To transition metal ion (TM
2+), such as Cr
2+, Co
2+, Fe
2+The studying in great detail of II-VI crystal of mixing starts from the sixties in last century.Transition metal ion can form deep energy level after entering semi-conductor in its energy gap, but also multiple valence state can occur, therefore regards this foreign ion as fluorescence " jinx " in the early stage research.Caused the sizable interest of people although this also is the II-VI crystal of doped transition metal ions, its laser effect is that the reason of report was just arranged to the nineties in last century.In the mid-90 in 20th century, people (the L.D. DeLoach such as De Loach of U.S. Lawrence Livermore National Laboratory, R.H. Page, G.D. Wilke, S.A. Payne, W.F. Krupke, Transition metal-doped zinc chalcogenides:Spectroscopy and laser demonstration of a new class of gain media, Journal Name:IEEE Journal of Quantum Electronics; Journal Volume:32; Journal Issue:6; Other Information:PBD:Jun 1996, (1996) Medium:X; Size:pp. 885-895.) reported at first the breakthrough of the II-VI Crystal study of doped transition metal ions: they have studied Cr
2+, Co
2+, Ni
2+And Fe
2+Absorption and the emission characteristic of the various zinc chalcogenides that mix think that this compounds gets a good chance of becoming the potential quality of mid-infrared laser medium, and based on Cr
2+: ZnSe and Cr
2+: ZnS has at room temperature realized the Laser output of 2.4 μ m.
II-VI crystal commonly used mainly contains ZnS and ZnSe.The II-VI crystal has excellent thermomechanical property, has again stronger thermal shock resistance and good heat-conductive characteristic, and this just provides prerequisite for doped transition metal ions II-VI crystal laser in the application on high-power.
As for the spectroscopy and laser performance, doped transition metal ions II-VI crystal is in close proximity to titanium-doped sapphire (Ti-S) laser apparatus.Can expect, be similar to titanium-doped sapphire laser, the II-VI crystal of doped transition metal ions can be luminous by diversified mode of oscillation, and have the advantages such as pump-coupling of available InGaAsP or InGaNAs diode array.The people such as Fazzio are to the Calculation and Study of multiplicity energy level and from the V to mixing ZnS, the ZnSe experimentally
2+, Cr
2+, Mn
2+, Fe
2+, Co
2+, Ni
2+The checking of the low decay energy level of ion has explained that all most research all concentrates on Cr
2+, Co
2+, Fe
2+The reason of ion.Cr
2+, Co
2+, Fe
2+The spectral range of ion is respectively 2～3 μ m, 2.6～4 μ m and 3.7～5.2 μ m, has wider tunable range.The light source that this class laser apparatus sends has represented now simple, the most economical mid-infrared laser light source.
Although the II-VI laser medium for doped transition metal ions has had comparatively deep research, utilize codope or many containing transition metals ion to mix but to rarely have with the research that increases laser apparatus tunable laser gain media scope into the II-VI crystal to relate to.
Summary of the invention
The objective of the invention is to provide a kind of in the preparation method of infrared wide range tunable laser gain media codope divalence chromium and cobalt ion II-VI crystal; This codope divalence chromium and cobalt ion II-VI crystal are to utilize the ampoule both-end to put hotchpotch vacuum heat diffusion transmission method, or utilize the two-sided plating hotchpotch of crystal film vacuum thermodiffusion transmission method; Carry out pumping by the overlapping absorbing wavelength of divalence chromium and cobalt codope ion again, can realize simultaneously that two kinds of ions are excited to excite, thus infrared wide range tunable laser gain media-codope divalence chromium and cobalt ion II-VI crystal in obtaining.The invention provides this novel doped crystal and be expected to become Tunable Infrared Laser gain media in the desirable wide band fully.
Another object of the present invention provide a kind of based in the Laser output experimental installation that makes up of infrared wide range tunable laser gain media codope divalence chromium and cobalt ion II-VI crystal, this experimental installation adopts codope divalence chromium and cobalt ion II-VI crystal as the Laser output medium, realizes the band tunable Laser output of infrared broad spectrum among 1.6～4.2 μ m.
For achieving the above object, the present invention is that the technical scheme that adopts following technical measures to consist of realizes.
The preparation method of a kind of mid-infrared laser gain media of the present invention codope divalence chromium and cobalt ion II-VI crystal, it is characterized in that utilizing the ampoule both-end to put hotchpotch vacuum heat diffusion transmission method and prepare codope divalence chromium and cobalt ion II-VI crystal, comprise following concrete technology step:
(1) with II-VI crystal thin discs, place by in the middle of the quartz ampoule that is formed by three sections silica tubes small in the end and big in the middle, get simple substance Co powder and simple substance Cr powder and place respectively the two ends of quartz ampoule, and two kinds of simple substance powder of Co and Cr separately with II-VI crystal thin discs between distance equate;
(2) quartz ampoule that the described three sections silica tubes of step (1) is formed utilizes the oxyhydrogen flame high temperature adhesives together, and it is vacuumized is 10
-3～10
-5Seal behind the Pa;
(3) quartz ampoule of step (2) good seal being positioned in the High Temperature Furnaces Heating Apparatus by the heating of many groups heating rod, is that thermodiffusion 1～15 day namely gets codope divalence chromium and cobalt ion II-VI crystal laser gain media sample under 700～1300 ℃ the condition in temperature;
(4) divalence chromium and the cobalt ion II-VI crystal laser gain media sample at last step (3) doping finished polish, cut, infrared wide range tunable laser gain media codope Cr in namely obtaining
2+, Co
2+: II-VI crystal.
In the such scheme, described II-VI crystal thin discs is ZnS or ZnSe or ZnTe or CdS or CdSe or CdTe crystal thin discs.
In the such scheme, described simple substance cobalt powder and its purity of simple substance chromium powder end are more than 99.99%; Described II-its purity of VI crystal thin discs is more than 99.999%.
In the such scheme, the concentration of described dopant ion is respectively Cr
2+Be 1 * 10
18Cm
-3～1 * 10
20Cm
-3, Co
2+Be 1 * 10
18Cm
-3～1 * 10
20Cm
-3
The preparation method of infrared wide range tunable laser gain media codope divalence chromium and cobalt ion II-VI crystal during the present invention is a kind of, it is characterized in that utilizing the standby codope divalence chromium of the two-sided chromium plating film of crystal and cobalt thin film vacuum heat diffusion legal system and cobalt ion II-VI crystal, comprise following concrete technology step:
(1) utilize sputtering method or vapour deposition method to plate respectively simple substance Co film and simple substance Cr film at two crystal faces of II-VI crystal thin discs, its two crystal faces plating film thickness is 100～500nm;
(2) step (1) has been plated the II of film-VI crystal thin discs and put into quartz ampoule, and it is vacuumized is 10
-3～10
-5Seal behind the Pa;
(3) quartz ampoule with step (2) good seal is positioned in the High Temperature Furnaces Heating Apparatus that is heated by many groups heating rod, be under 700～1300 ℃ the condition in temperature, thermodiffusion 1～15 day namely obtains codope divalence chromium and cobalt ion II-VI crystal laser gain media sample;
(4) divalence chromium and the cobalt ion II-VI crystal laser gain media sample at last step (3) doping finished polish, cut, infrared wide range tunable laser gain media codope Cr in namely obtaining
2+, Co
2+: II-VI crystal.
In the such scheme, described II-VI crystal thin discs is ZnS or ZnSe or ZnTe or CdS or CdSe or CdTe crystal thin discs.
In the such scheme, described simple substance cobalt film and its purity of simple substance chromium thin film are more than 99.99%; The purity of described II-VI crystal thin discs is more than 99.999%.
In the such scheme, the concentration of described dopant ion is respectively Cr
2+Be 1 * 10
18Cm
-3～1 * 10
20Cm
-3, Co
2+Be 1 * 10
18Cm
-3～1 * 10
20Cm
-3
The present invention a kind of based in the Laser output experimental installation that makes up of infrared wide range tunable laser gain media codope divalence chromium and cobalt ion II-VI crystal, it is characterized in that comprising laser pumping source, pump beam, watertight chest, sealing light hole, input cavity mirror, gain medium, output cavity mirror, Output of laser light beam; Enter the input cavity mirror from the pump beam of the laser pumping source output sealing light hole by watertight chest, pump beam arrives gain medium through the input cavity mirror, gain media produces the light conversion and realizes light amplification, then arrive the output cavity mirror, through the laser of output cavity mirror again through the sealing light hole Output of laser light velocity.
In the such scheme, described pump beam wavelength is 1.4～1.8 μ m; Output of laser light beam wavelength 1.6～4.2 μ m cross the Output of laser total reflection for making the pump beam full impregnated, its input cavity mirror plated film; For the Output of laser light beam is reflected more than 90%, its output cavity mirror is plated film also.
The characteristics that the present invention has and useful technique effect are as follows:
The present invention utilizes divalence chromium and cobalt ion codope II-VI crystal, obtained desirable in infrared wide band tunable laser gain media; Its preparation method processing step is simple, easy handling and realization; The Cr of infrared wide range wave band tunable laser gain media in having
2+And Co
2+The Laser output experimental installation that codope II-VI crystal makes up, infrared wide range tunable laser among exportable 1.6～4.2 μ m; Thereby can significantly increase laser apparatus tunable laser gain media scope.
Ultimate principle of the present invention is: utilize the ampoule both-end to put hotchpotch vacuum heat diffusion transmission method, or utilize the two-sided plating hotchpotch of crystal film vacuum thermodiffusion transmission method, prepare Cr
2+And Co
2+Codope II-VI crystal; The overlapping absorbing wavelength of recycling divalence chromium and cobalt codope ion is carried out pumping to gain media, can realize simultaneously that two kinds of ions are excited to excite, and exports thereby obtain among 1.6～4.2 μ m infrared wide range tunable laser.Because the Cr of infrared wide range tunable laser output among 1.6～4.2 μ m that provide
2+And Co
2+Codope II-VI crystal laser gain media, in this laser medium, Cr
2+ 5E →
5T
2Transition absorbing wavelength 1.4～1.8 μ m and Co
2+ 4A
2(F) →
4T
1Therefore (F) transition absorbing wavelength 1.2～2.0 μ m have overlapping wave band 1.4～1.8 μ m, utilize a certain wavelength in the overlapping range, such as 1.55 μ m, carry out pumping just can realize simultaneously two kinds of ions be excited excite; Cr
2+The fluorescence spectrum scope be 1.6～2.8 μ m, Co
2+Fluorescence spectrum be 2.6～4.2 μ m, thereby obtain the output of the wide spectrum tunable laser of 1.6～4.2 μ m.The Cr that mixes
2+And Co
2+Ion and the interaction between the ion on every side are more intense, and its electronic state parameter and crystal are closely related, and different crystal causes the tunable laser output area also to have difference.Particularly, Cr
2+, Co
2+: ZnS tunable laser output area is 1.6～3.6 μ m, Cr
2+, Co
2+: ZnSe is 1.8～3.8 μ m, Cr
2+, Co
2+: CdS is 2.0～3.9 μ m, Cr
2+, Co
2+: CdSe is 2.2～4.2 μ m.
Description of drawings
Utilize the quartz ampoule both-end to put infrared wide range tunable laser gain media divalence chromium and cobalt ion codope Cr in the preparation of hotchpotch vacuum heat diffusion transmission method among Fig. 1 embodiment of the invention 1 and the embodiment 2
2+, Co
2+: ZnSe crystal and Cr
2+, Co
2+: CdS crystallization process schematic diagram;
Pass through infrared wide range tunable laser gain media divalence chromium and cobalt ion codope Cr in the preparation of the two-sided plating hotchpotch of crystal film vacuum heat diffusion transmission method among Fig. 2 embodiment of the invention 3 and the embodiment 4
2+, Co
2+: ZnTe crystal and Cr
2+, Co
2+: CdTe crystallization process schematic diagram;
Fig. 3 embodiment of the invention 5 based in infrared wide range tunable laser gain media divalence chromium and cobalt ion codope Cr
2+, Co
2+: the Laser output experimental installation structural representation that the ZnSe crystal makes up.
Among the figure, 1 Co powder, 2 heating rods, 3 quartz ampoules, 4 crystal thin discs, 5 Cr powder, 6 Cr films, 7 Co films, 8 laser pumping sources, 9 pump beams, 10 watertight chests, 11 sealing light holes, 12 input cavity mirrors, 13 gain mediums, 14 output cavity mirrors, 15 Output of laser light beams.
Embodiment
Below in conjunction with accompanying drawing and with specific embodiment the present invention is described in further detail, but and does not mean that it is any restriction of the present invention being protected content.
Embodiment 1:
Utilize the ampoule both-end to put hotchpotch vacuum heat diffusion transmission method and prepare Cr
2+, Co
2+: the ZnSe crystal
This example is selected Cr
2+, Co
2+: ZnSe is as preparation Cr
2+, Co
2+: the raw material of ZnSe crystal, purity simple substance chromium powder and cobalt powder and the ZnSe crystal of purity more than 99.999% more than 99.99%.
In this example, select its purity be simple substance Cr powder 5 more than 99.99% and simple substance Co powder 1, take and purity as the ZnSe crystal thin discs 4 more than 99.999% as preparation Cr
2+, Co
2+: the raw material of ZnSe codope crystal.
At first with a ZnSe crystal thin discs 4, its diameter 2 cm, thickness 0.2 cm, place quartz ampoule 3 mid-ways that formed by three sections silica tubes small in the end and big in the middle, get again simple substance Co powder 1 and simple substance Cr powder 5, its weight respectively is 0.1 g, place respectively quartz ampoule 3 end positions, the simple substance Co powder at described quartz ampoule 3 two ends and simple substance Cr powder placement location respectively with quartz ampoule 3 in the middle of ZnSe crystal thin discs between distance equate, then utilize oxyhydrogen flame high temperature, three sections silica tubes are bonded together, and it is vacuumized is 10
-5Seal behind the Pa, shown in Fig. 1; The quartz ampoule 3 of good seal is positioned in the High Temperature Furnaces Heating Apparatus by 2 heating of many groups heating rod, is thermodiffusion 15 days under 700 ℃ the condition in temperature, gets codope Cr
2+, Co
2+: ZnSe crystal laser gain media sample, the concentration of its dopant ion is respectively Cr
2+Be 1 * 10
18Cm
-3, Co
2+Be 1 * 10
18Cm
-3～1 * 10
18Cm
-3The codope Cr that at last doping is finished
2+, Co
2+: ZnSe crystal laser gain media sample polishes, and cutting obtains fine quality gain medium Cr
2+, Co
2+: the ZnSe crystal.
Embodiment 2:
Utilize the ampoule both-end to put hotchpotch vacuum heat diffusion transmission method and prepare Cr
2+, Co
2+: the CdS crystal
In this example, selecting its purity is that simple substance Cr powder 5 more than 99.99% and simple substance Co powder 1 and purity are that CdS crystal thin discs 4 more than 99.999% is as preparation Cr
2+, Co
2+: the raw material of CdS codope crystal.
At first with a CdS crystal thin discs 4, its diameter 2 cm, thickness 0.2 cm, place quartz ampoule 3 mid-ways that formed by three sections silica tubes small in the end and big in the middle, get again simple substance Co powder 1 and simple substance Cr powder 5, its weight respectively is 0.3 g, place respectively quartz ampoule 3 end positions, the simple substance Co powder at described quartz ampoule 3 two ends and simple substance Cr powder placement location respectively with quartz ampoule 3 in the middle of CdS crystal thin discs 4 between distance equate, then utilize oxyhydrogen flame high temperature, three sections silica tubes are bonded together, and it is vacuumized is 10
-5Seal behind the Pa, as shown in Figure 1; The quartz ampoule 3 of good seal is positioned in the High Temperature Furnaces Heating Apparatus by 2 heating of many groups heating rod, is thermodiffusion 2 days under 1300 ℃ the condition in temperature, gets codope Cr
2+, Co
2+: CdS crystal laser gain media sample, the concentration of its dopant ion is respectively Cr
2+Be 1 * 10
20Cm
-3, Co
2+Be 1 * 10
18Cm
-3～1 * 10
20Cm
-3The codope Cr that at last doping is finished
2+, Co
2+: CdS crystal laser gain media sample polishes, and cuts, and obtains the Cr of fine quality gain medium
2+, Co
2+: the CdS crystal.
Embodiment 3:
Utilize the two-sided plating hotchpotch of crystal film vacuum thermodiffusion transmission method to prepare Cr
2+, Co
2+: the ZnTe crystal
In this example, selecting its purity is that simple substance Cr powder 5 and simple substance Co powder 1 and purity more than 99.99% is that ZnTe crystal thin discs 4 99.999% or more is as preparing Cr
2+, Co
2+: the raw material of ZnTe codope crystal.
At first utilize sputtering film coating method at diameter 2 cm, two crystal faces of the ZnTe crystal thin discs 4 of thickness 2mm plate respectively simple substance Co film 7 and Cr film 6, coating film thickness is 100 nm, and the ZnTe crystal thin discs 4 of plated film is put into quartz ampoule 3, quartz ampoule 3 is vacuumized be about 10
-5Pa, then sealing, as shown in Figure 2; The quartz ampoule 3 of sealing after finishing is positioned in the High Temperature Furnaces Heating Apparatus by 2 heating of many groups heating rod, is thermodiffusion 13 days under 900 ℃ the condition in temperature, gets codope Cr
2+, Co
2+: ZnTe crystal laser gain media sample, the concentration of its dopant ion is respectively Cr
2+Be 1 * 10
20Cm
-3, Co
2+Be 1 * 10
20Cm
-3The codope Cr that at last doping is finished
2+, Co
2+: ZnTe crystal laser gain media sample polishes, cuts, and obtains fine quality gain medium Cr
2+, Co
2+: the ZnTe crystal.
Embodiment 4:
Utilize the two-sided plating hotchpotch of crystal film vacuum thermodiffusion transmission method to prepare Cr
2+, Co
2+: the CdTe crystal
In this example, selecting purity is that simple substance Cr powder 5 99.99% or more and simple substance Co powder 1 and purity are that CdTe crystal more than 99.999% is as preparing Cr
2+, Co
2+: the raw material of CdTe codope crystal.
At first utilize vapour deposition method at diameter 2 cm, two crystal faces of the CdTe crystal thin discs 4 of thickness 2mm plate respectively simple substance Co film 7 and Cr film 6, coating film thickness is 500 nm, and the CdTe crystal thin discs 4 that plates film is put into quartz ampoule 3, quartz ampoule 3 is vacuumized be about 10
-5Pa, then sealing, as shown in Figure 2; The quartz ampoule 3 of sealing after finishing is positioned in the High Temperature Furnaces Heating Apparatus by 2 heating of many groups heating rod, is thermodiffusion 1 day under 1300 ℃ the condition in temperature, gets codope Cr
2+, Co
2+: CdTe crystal laser gain media sample, the concentration of its dopant ion is respectively Cr
2+Be 1 * 10
20Cm
-3, Co
2+Be 1 * 10
20Cm
-3The codope Cr that at last doping is finished
2+, Co
2+: CdTe crystal laser gain media sample polishes, cuts, and obtains fine quality gain medium Cr
2+, Co
2+: the CdTe crystal.
The present invention a kind of based in the Laser output experimental installation that makes up of infrared wide range tunable laser gain media codope divalence chromium and cobalt ion II-VI crystal, as shown in Figure 3, comprise laser pumping source 8, pump beam 9, watertight chest 10, sealing light hole 11, input cavity mirror 12, gain medium 13, output cavity mirror 14, Output of laser light beam 15; Enter input cavity mirror 12 from the pump beam 9 of the laser pumping source 8 output sealing light hole 11 by watertight chest 10, pump beam 9 arrives the gain medium 13 by codope divalence chromium and cobalt ion II-VI crystal behind input cavity mirror 12, then arrive output cavity mirror 14, through the laser of output cavity mirror 14 again through sealing light hole 11 Output of laser light beams 15.
Embodiment 5:
The gain medium Cr of one of them high-quality that the present invention obtains above-mentioned preparation method
2+, Co
2+: the ZnSe crystal, as in the Laser output experimental installation absorption spectrum and emmission spectrum being studied; Here determine concrete Cr
2+, Co
2+: the pumping wavelength of ZnSe crystal is 1.55 μ m, Cr
2+, Co
2+: the emission wavelength of ZnSe crystal is 1.8～3.7 μ m.Select flat-concave cavity as laser resonant cavity mirror, adopt semiconductor laser (LD) to carry out pumping as pumping source, realize the tunable mid-infrared laser output of 1.8～3.7 μ m.Take the wavelength 3.2 μ m of Output of laser as example, the Laser Resonator System of designing.As shown in Figure 3, laser pumping source 8 wavelength are 1.55 μ m, the pump beam 9 of output, and its input cavity mirror 12 plated films, to 1.55 μ m full impregnated mistakes, to 3.2 mum wavelength light total reflections, gain medium 13 is Cr
2+, Co
2+: ZnSe, its output cavity mirror 14 plated films, to 90% reflection of 3.2 mum wavelengths, Output of laser 15 its output wavelengths are 3.2 μ m.It should be noted that; in the time of near Output of laser selection output wavelength is 2.9 μ m; be in the strong absorption band of water; therefore need to get rid of aqueous vapor to the impact of laserresonator in the Laser Experiments device, can place laserresonator vacuum or laserresonator is filled shielding gas can eliminate this impact in watertight chest 10 this moment.
Claims (10)
1. the preparation method of infrared wide range tunable laser gain media codope divalence chromium and cobalt ion II-VI crystal in a kind, it is characterized in that utilizing the ampoule both-end to put hotchpotch vacuum heat diffusion transmission method and prepare codope divalence chromium and cobalt ion II-VI crystal, comprise following concrete technology step:
(1) with II-VI crystal thin discs (4), place by in the middle of the quartz ampoule (3) that is formed by three sections silica tubes small in the end and big in the middle, get simple substance Co powder (1) and simple substance Cr powder (5) and place respectively the two ends of quartz ampoule (3), and two kinds of simple substance powder of Co and Cr separately with II-VI crystal thin discs between distance equate;
(2) quartz ampoule (3) that the described three sections silica tubes of step (1) is formed utilizes the oxyhydrogen flame high temperature adhesives together, and it is vacuumized is 10
-3～10
-5Seal behind the Pa;
(3) quartz ampoule (3) with step (2) good seal is positioned in the High Temperature Furnaces Heating Apparatus that is heated by many groups heating rod (2), be under 700～1300 ℃ the condition in temperature, thermodiffusion 1～15 day namely gets codope divalence chromium and cobalt ion II-VI crystal laser gain media sample;
(4) divalence chromium and the cobalt ion II-VI crystal laser gain media sample at last step (3) doping finished polish, cut, infrared wide range tunable laser gain media codope Cr in namely obtaining
2+, Co
2+: II-VI crystal.
2. the preparation method of described codope divalence chromium and cobalt ion II-VI crystal according to claim 1 is characterized in that described II-VI crystal thin discs (4) is ZnS or ZnSe or ZnTe or CdS or CdSe or CdTe crystal thin discs.
3. the preparation method of described codope divalence chromium and cobalt ion II-VI crystal according to claim 1 is characterized in that described simple substance cobalt powder (1) and simple substance chromium powder end (5) its purity are more than 99.99%; Described II-its purity of VI crystal thin discs (4) is more than 99.999%.
4. according to claim 1 or the preparation method of 3 described codope divalence chromium and cobalt ion II-VI crystal, it is characterized in that the concentration of described dopant ion is respectively Cr
2+Be 1 * 10
18Cm
-3～1 * 10
20Cm
-3, Co
2+Be 1 * 10
18Cm
-3～1 * 10
20Cm
-3
5. the preparation method of infrared wide range tunable laser gain media codope divalence chromium and cobalt ion II-VI crystal in a kind, it is characterized in that utilizing the standby codope divalence chromium of the two-sided chromium plating film of crystal and cobalt thin film vacuum heat diffusion legal system and cobalt ion II-VI crystal, comprise following concrete technology step:
(1) utilize sputtering method or vapour deposition method to plate respectively simple substance Co film (7) and simple substance Cr film (6) at two crystal faces of II-VI crystal thin discs (4), its two crystal faces plating film thickness is 100～500nm;
(2) step (1) has been plated the II of film-VI crystal thin discs (4) and put into quartz ampoule (3), and it is vacuumized is 10
-3～10
-5Seal behind the Pa;
(3) quartz ampoule (3) with step (2) good seal is positioned in the High Temperature Furnaces Heating Apparatus, is that thermodiffusion 1～15 day namely gets codope divalence chromium and cobalt ion II-VI crystal laser gain media sample under 700～1300 ℃ the condition in temperature;
(4) divalence chromium and the cobalt ion II-VI crystal laser gain media sample at last step (3) doping finished polish, cut, infrared wide range tunable laser gain media codope Cr in namely obtaining
2+, Co
2+: II-VI crystal.
6. the preparation method of described codope divalence chromium and cobalt ion II-VI crystal according to claim 5 is characterized in that
Described II-VI crystal thin discs (4) is ZnS or ZnSe or ZnTe or CdS or CdSe or CdTe crystal thin discs.
7. the preparation method of described codope divalence chromium and cobalt ion II-VI crystal according to claim 5 is characterized in that
Described simple substance cobalt film (7) and its purity of simple substance chromium thin film (6) are more than 99.99%; The purity of described II-VI crystal thin discs (4) is more than 99.999%.
8. according to claim 5 or the preparation method of 7 described codope divalence chromium and cobalt ion II-VI crystal, it is characterized in that the concentration of described dopant ion is respectively Cr
2+Be 1 * 10
18Cm
-3～1 * 10
20Cm
-3, Co
2+Be 1 * 10
18Cm
-3～1 * 10
20Cm
-3
9. the Laser output experimental installation that infrared wide range tunable laser gain media codope divalence chromium and cobalt ion II-VI crystal makes up in a kind is characterized in that comprising laser pumping source (8), pump beam (9), watertight chest (10), sealing light hole (11), input cavity mirror (12), gain medium (13), output cavity mirror (14), Output of laser light beam (15); Enter input cavity mirror (12) from the pump beam (9) of laser pumping source (8) the output sealing light hole (11) by watertight chest (10), pump beam (9) arrives gain medium (13) through input cavity mirror (12), then arrive output cavity mirror (14), through the laser of output cavity mirror (14) again through sealing light hole (11) the Output of laser light velocity (15).
10. Laser output experimental installation according to claim 9 is characterized in that described pump beam (9) wavelength is 1.4～1.8 μ m; Output of laser light beam (15) wavelength is 1.6～4.2 μ m; Input cavity mirror (12) and output cavity mirror (14) be plated film all.
Priority Applications (1)
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103590110A (en) * | 2013-11-14 | 2014-02-19 | 北京雷生强式科技有限责任公司 | Preparation method of iron doped ZnSe (zinc selenide) laser crystal |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1326018A (en) * | 2000-05-19 | 2001-12-12 | 住友电气工业株式会社 | Heat treatment of ZnSe crystal substrates, heat treated substrates and optical emitter |
| CN202872171U (en) * | 2012-10-16 | 2013-04-10 | 四川大学 | Laser output experimental device constructed by intermediate infrared wide spectrum tunable laser gain medium |
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Patent Citations (2)
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|---|---|---|---|---|
| CN1326018A (en) * | 2000-05-19 | 2001-12-12 | 住友电气工业株式会社 | Heat treatment of ZnSe crystal substrates, heat treated substrates and optical emitter |
| CN202872171U (en) * | 2012-10-16 | 2013-04-10 | 四川大学 | Laser output experimental device constructed by intermediate infrared wide spectrum tunable laser gain medium |
Non-Patent Citations (2)
| Title |
|---|
| O.O. ADETUNJI ET AL: "Growth of Cr- and Co-Doped CdSe Crystals from High-Temperature Selenium Solutions", 《JOURNAL OF ELECTRONIC MATERIALS》 * |
| U. HOMMERICH: "Material synthesis and infrared optical properties of transition metal doped binary and ternary II-VI semiconductors", 《MATERIALS RESEARCH SOCIETY》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103590110A (en) * | 2013-11-14 | 2014-02-19 | 北京雷生强式科技有限责任公司 | Preparation method of iron doped ZnSe (zinc selenide) laser crystal |
| CN103590110B (en) * | 2013-11-14 | 2016-08-31 | 北京雷生强式科技有限责任公司 | A kind of preparation method of iron-doped zinc selenide laser crystal |
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