CN102881782A - Segmenting method of optical device substrate - Google Patents

Segmenting method of optical device substrate Download PDF

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Publication number
CN102881782A
CN102881782A CN2012102385137A CN201210238513A CN102881782A CN 102881782 A CN102881782 A CN 102881782A CN 2012102385137 A CN2012102385137 A CN 2012102385137A CN 201210238513 A CN201210238513 A CN 201210238513A CN 102881782 A CN102881782 A CN 102881782A
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optical device
substrate
preset lines
laser processing
processing groove
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CN102881782B (en
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波多野雄二
星野仁志
大庭龙吾
大町修
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Disco Corp
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Disco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/044—Seam tracking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/34—Coated articles, e.g. plated or painted; Surface treated articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)

Abstract

The invention provides a segmenting method of an optical device substrate. A segmenting method of the optical device substrate of which the surface is equipped with an optical layer comprises the steps of optical device substrate attaching step of attaching the optical device substrate to the surface of a cutting belt assembled in an annular frame; a block forming step of radiating laser rays along a first segmenting predetermined line and a second segmenting predetermined line passing through the center of the optical device substrate to segment the optical device substrate into at least four block substrates; a first laser processing groove forming step of radiating laser rays along the first segmenting predetermined line of each block substrate to form a laser processing groove; and a second laser processing groove forming step of radiating laser rays along the second segmenting predetermined line of each block substrate to form a laser processing groove. By alternatively implementing the first and second laser processing groove forming steps and cutting the block substrates along all the first and second segmenting predetermined lines, the optical device substrate is segmented into optical devices.

Description

The dividing method of optical device substrate
Technical field
The present invention relates to the dividing method of optical device substrate, this optical device substrate has substrate and is laminated in the optical device layer of this substrate surface, this optical device layer is divided each zone that forms be formed with optical device cutting apart preset lines and cut apart preset lines at many articles the 2nd that extend with the 1st the 2nd direction of cutting apart the preset lines quadrature by many articles the 1st that extend in the 1st direction, the method is cut apart preset lines and the 2nd along the 1st and is cut apart preset lines and cut apart this optical device substrate.
Background technology
In the optical device manufacturing step, at the surperficial stacked optical device layer that is consisted of by N-shaped semiconductor layer and p-type semiconductor layer of the Sapphire Substrate that is circular plate shape roughly and carborundum homepitaxy substrate and dividing a plurality of zones that form and form the optical devices such as light-emitting diode, laser diode by being many spacing tracks that clathrate forms, consist of thus optical device wafer via resilient coating.Then cut apart optical device wafer along spacing track, thereby produce each optical device (for example with reference to patent documentation 1).
In addition, technology as the brightness that promotes optical device, in following patent documentation 2, disclose and be known as the manufacture method of peeling off, namely, via gold (Au), platinum (Pt), chromium (Cr), indium (In), the jointing metal layers such as palladium (Pd) are with molybdenum (Mo), copper (Cu), silicon (Si) etc. moves to be established substrate and joins the optical device layer to, from the rear side of epitaxial substrate to resilient coating irradiating laser light, thereby peel off epitaxial substrate, the optical device layer handed over to establish substrate, wherein, this optical device layer is to be laminated in Sapphire Substrate and the carborundum homepitaxy substrate surface that consists of optical device wafer via resilient coating, and consisted of by n type semiconductor layer and p-type semiconductor layer.
As mentioned above, the 1st cut apart preset lines and the 2nd and cut apart preset lines to establishing the optical device substrate that substrate forms and cut apart by the optical device layer is handed over to along what be formed at the optical device layer, thereby produce each optical device.
[patent documentation 1] Japanese kokai publication hei 10-305420 communique
[patent documentation 2] Japanese Unexamined Patent Application Publication 2005-516415 communique
The 1st cut apart preset lines and the 2nd and cut apart the method that preset lines is cut apart the optical device substrate along what be formed at the optical device layer as above-mentioned, practical method is to cut apart preset lines and the 2nd along the 1st to cut apart preset lines irradiating laser light to cut off.
Consisting of moving of above-mentioned optical device substrate, to establish the thickness of substrate be about 120 μ m, for irradiating laser light cuts off, need to cut apart preset lines to 1 and implement 4 to 5 irradiating laser light and form step with the laser processing groove that forms laser processing groove.
Yet, in the 1st laser processing groove formation step, cut apart preset lines irradiating laser light with after having formed laser processing groove along all, to repeat to implement the 2nd later laser processing groove along laser processing groove and form step, and the optical device substrate is cooled after the melting at illuminated laser beam and shrink.Therefore, the interval of cutting apart preset lines dwindles and the irradiation position of laser beam can depart from laser processing groove, thereby at every moment correction position is implemented laser processing groove and formed step, has the relatively poor problem of formation efficiency.
Summary of the invention
The present invention finishes in view of the above fact, and its main technical task is to provide a kind of and is implementing needn't to carry out the dividing method that position correction just can be cut to the optical device substrate optical device substrate of each optical device when laser processing groove forms step.
In order to solve above-mentioned major technique problem, the invention provides a kind of processing method of optical device substrate, this optical device substrate has substrate and is laminated in the optical device layer on the surface of this substrate, divide a plurality of zones that form and be formed with optical device cutting apart preset lines and cut apart preset lines at many articles the 2nd that form with the 1st direction of cutting apart the preset lines quadrature by many articles the 1st that form in prescribed direction, the processing method of this optical device substrate is characterised in that and comprises: the optical device substrate attaches step, the optical device substrate is attached at the surface of the cutting belt that is assemblied in ring-shaped frame; Piece forms step, cuts apart preset lines and the 2nd along the 1st of the central authorities of the optical device substrate on the surface by being attached at cutting belt and cuts apart preset lines irradiating laser light, and the optical device substrate is divided at least 4 piece substrates; The 1st laser processing groove forms step, the 1st cuts apart preset lines irradiating laser light along what be formed at each piece substrate, thereby forms laser processing groove; And the 2nd laser processing groove form step, the 2nd cut apart preset lines irradiating laser light along what be formed at each piece substrate, thereby formation laser processing groove, the 1st laser processing groove forms step and the 2nd laser processing groove forms step by alternately implementing, and the 1st cuts apart preset lines and the 2nd and cuts apart preset lines and cut off each piece substrate and be divided into each optical device along all.
In the dividing method of optical device substrate of the present invention, after the optical device substrate is divided into the piece substrate, cutting apart preset lines and the 2nd along the 1st cuts apart preset lines and implements alternately that the 1st laser processing groove forms step and the 2nd laser processing groove forms step, thereby the contraction accumulation of piece substrate can be converged in the permissible value, thereby till 1st laser processing groove last to enforcement forms step and the 2nd laser processing groove formation step, all need not to carry out position correction, can improving production efficiency.
Description of drawings
Fig. 1 is for the manufacture of the stereogram of the optical device wafer of the optical device substrate of the dividing method processing of using optical device substrate of the present invention and amplifies the profile of expression major part.
Fig. 2 be with move establish substrate be engaged in optical device wafer shown in Figure 1 the surface move the key diagram of establishing the substrate engagement step.
Fig. 3 is the key diagram of peeling off the substrate desquamation step of the epitaxial substrate that consists of optical device wafer shown in Figure 1.
Fig. 4 is the key diagram that the optical device substrate of the dividing method of optical device substrate of the present invention attaches step.
Fig. 5 forms the major part stereogram that step, the 1st laser processing groove formation step and the 2nd laser processing groove form the laser processing device of step for the dividing method piece of implementing optical device substrate of the present invention.
Fig. 6 is the key diagram that the piece of the dividing method of optical device substrate of the present invention forms step.
Fig. 7 is the key diagram that the piece of the dividing method of optical device substrate of the present invention forms step.
Fig. 8 is the key diagram that the 1st laser processing groove of the dividing method of optical device substrate of the present invention forms step.
Fig. 9 is the key diagram that the 2nd laser processing groove of the dividing method of optical device substrate of the present invention forms step.
Symbol description
2 optical device wafers; 20 epitaxial substrate; 21 optical device layers; 22 resilient coatings; 3 move and establish substrate; 4 jointing metal layers; 5 laser processing devices; The chuck table of 51 laser processing devices; 52 laser light irradiation unit; 522 concentrators; 53 image units; The F ring-shaped frame; The T cutting belt
Embodiment
Describe the preferred implementation of the dividing method of optical device substrate of the present invention in detail referring to accompanying drawing.
Fig. 1 illustrates for the manufacture of the stereogram of the optical device wafer of the optical device substrate of being processed by the dividing method of optical device substrate of the present invention and amplifies the profile that has represented major part.The Sapphire Substrate of circular plate shape and the surperficial 20a of carborundum homepitaxy substrate 20 have formed the optical device layer 21 that is made of N-shaped gallium nitride semiconductor layers 211 and p-type gallium nitride semiconductor layers 212 to optical device wafer 2 shown in Figure 1 by the epitaxial growth method being roughly.And, by the epitaxial growth method when the surperficial stacked optical device layer 21 that is consisted of by N-shaped gallium nitride semiconductor layers 211 and p-type gallium nitride semiconductor layers 212 of epitaxial substrate 20, at the surperficial 20a of epitaxial substrate 20 and form and form the resilient coating 22 that is consisted of by AlGaN layer etc. between the N-shaped gallium nitride semiconductor layers 211 of optical device layer 21.The diameter that the optical device wafer 2 that as above consists of forms epitaxial substrate 20 in the illustrated embodiment is that 50mm and thickness for example are 430 μ m, the thickness that comprises the optical device layer 21 of resilient coating 22 for example is 5 μ m.And optical device layer 21 is cut apart preset lines 231 and is cut apart preset lines 232 at many articles the 2nd that form with the 1st direction of cutting apart the preset lines quadrature by many articles the 1st that form in the 1st direction such as Fig. 1 (a) be shown in and divides a plurality of zones that form and form optical device 24.And, in the illustrated embodiment, optical device 24 is of a size of 1.2mm * 1.2mm, the 1st and cuts apart preset lines 231 and the 2nd to cut apart the width of preset lines 232 be that 50 μ m, the 1st are cut apart preset lines 231 and the 2nd and cut apart the quantity of preset lines 232 and be set to respectively 41.
As mentioned above, establish substrate in order to peel off the epitaxial substrate 20 of optical device wafer 2 from optical device layer 21 and to be handed over to, enforcement will move establishes the moving of surperficial 21a that substrate is engaged in optical device layer 21 and establishes the substrate engagement step.That is such as Fig. 2 (a) with (b), for example be the surperficial 21a that moving of 220 μ m established the optical device layer 21 that surperficial 20a that substrate 3 is engaged in the epitaxial substrate 20 that consists of optical device wafer 2 forms via jointing metal layer 4 with thickness.And, establish substrate 3 as moving, molybdenum (Mo), copper (Cu), silicon (Si) etc. can be used, and gold (Au), platinum (Pt), chromium (Cr), indium (In), palladium (Pd) etc. can be used as the jointing metal that forms jointing metal layer 4.This moves and establishes the substrate engagement step is at the surperficial 21a of the optical device layer 21 of the surperficial 20a that is formed at epitaxial substrate 20 or moves the above-mentioned jointing metal of surperficial 3a evaporation of establishing substrate 3, formation thickness is the jointing metal layer 4 about 3 μ m, with and the crimping relative with the surperficial 21a that moves the surperficial 3a that establishes substrate 3 or optical device layer 21 of this jointing metal layer 4, thereby can will move the surperficial 21a that the surperficial 3a that establishes substrate 3 is engaged in the optical device layer 21 that consists of optical device wafer 2 via jointing metal layer 4.And, move and establish that substrate 3 is set to diameter 50mm, thickness is 220 μ m.
Establish the substrate engagement step if implemented above-mentioned moving, then implement to peel off from optical device layer 21 and establish the substrate desquamation step of epitaxial substrate 20 that substrate 3 is engaged in the optical device wafer 2 of optical device layer 21 with moving.In this substrate desquamation step, for example shown in Fig. 3 (a), when making above-mentioned optical device wafer 2 to being formed at resilient coating 22 additional stresses between epitaxial substrate 20 and the optical device layer 21, thereby shown in Fig. 3 (b) with epitaxial substrate 20 from 21 separation of optical device layer.The substrate desquamation step of as above, separating epitaxial substrate and optical device floor for example can be implemented by the disclosed method of TOHKEMY 2000-101139 communique.As above, peeling off to engage at optical device layer 21 from optical device layer 21 has the epitaxial substrate 20 of moving the optical device wafer 2 of establishing substrate 3, thereby is formed on the optical device substrate 30 that moves the surface that the surface engagement of establishing substrate 3 has optical device layer 21.The following describes along what be formed at optical device layer 21 and the 1st cut apart preset lines 231 and the 2nd and cut apart the dividing method that preset lines 232 is cut apart the optical device substrate of optical device substrate 30.
At first, implement optical device substrate 30 is attached at the optical device substrate attaching step on the cutting belt surface of assembling at ring-shaped frame.That is, such as Fig. 4 (a) with (b), the surface that the back side 3b side of establishing substrate 3 is attached at the cutting belt T that is made of synthetic resin films such as polyenes that is assemblied in ring-shaped frame F of moving of optical device substrate 30 will be consisted of.Therefore, with regard to the optical device substrate 30 that is attached at cutting belt T surface, optical device layer 21 becomes upside.
After having implemented above-mentioned optical device substrate attaching step, cut apart preset lines 231 and the 2nd along the 1st of the central authorities of the optical device substrate 30 by being attached at cutting belt T surface and cut apart preset lines 232 irradiating laser light, the piece of implementing optical device substrate 30 is divided at least 4 piece substrates forms step.It is to use laser processing device shown in Figure 55 to implement in the illustrated embodiment that this piece forms step.The image unit 53 that laser processing device 5 shown in Figure 5 has the chuck table 51 that keeps machined object, make a video recording to the laser light irradiation unit 52 of the machined object irradiated with pulse laser light that remains in this chuck table 51, to the machined object that remains in chuck table 51.
Above-mentioned chuck table 51 constitutes in the maintenance face absorption as upper surface and keeps machined object, by the processed feeding of direction shown in the arrow X in Fig. 5 of not shown processing feed unit, and by not shown index feed unit in Fig. 5 direction shown in the arrow Y by index feed.
Above-mentioned laser light irradiation unit 52 comprises the housing 521 of the drum of substantial level configuration.In housing 521, be equipped with the pulse laser light oscillating unit with not shown pulsed laser light line oscillator and repetition rate setup unit.Be equipped with for assembling by the vibrate concentrator 522 of the pulse laser light that of pulse laser light oscillating unit at the leading section of above-mentioned housing 521.
In addition, the image unit 53 that is assemblied in the leading section of the housing 521 that consists of above-mentioned laser light irradiation unit 52 is made of optical units such as microscope and CCD cameras, and the picture signal that shooting is obtained sends to not shown control unit.
The piece formation step of using above-mentioned laser processing device 5 above-mentioned optical device substrate 30 to be divided at least 4 piece substrates is described with reference to Fig. 5 to Fig. 7.In piece forms step, at first, the cutting belt T that is pasted with optical device substrate 30 is sidelong on the chuck table 51 that places above-mentioned laser processing device shown in Figure 5.Then, start not shown absorbing unit, via cutting belt T 30 absorption of optical device substrate are remained in (wafer maintenance step) on the chuck table 51.Therefore, with regard to the optical device substrate 30 that remains in chuck table 51, optical device layer 21 becomes upside.And, in Fig. 5, omit the ring-shaped frame F that has represented to be equipped with cutting belt T, and ring-shaped frame F remains in the suitable framework holding unit that is provided in chuck table 51.
As mentioned above, if optical device substrate 30 absorption is remained on the chuck table 51, then start not shown processing and give the unit, with absorption kept the chuck table 51 of optical device substrate 30 move to image unit 53 under.When chuck table 51 be located in image unit 53 under the time, carry out to use image unit 53 and not shown control unit to detect the aligning operation of the machining area that should carry out laser processing of optical device substrate 30.Namely, image unit 53 and not shown control unit are carried out the 1st cutting apart preset lines 231 and processing the aligning (alignment procedures) of execution laser light irradiation position along the 1st images such as pattern match of cutting apart the contraposition between the concentrator 522 of laser light irradiation unit 52 of preset lines 231 irradiating laser light what prescribed direction formed for sun adjuster spare substrate 30 successively.And, for be formed at cutting apart the 2nd of direction that preset lines 231 intersects and cut apart preset lines 232 and carry out too aiming at of laser light irradiation position with the 1st of optical device substrate 30.
If implemented above-mentioned alignment procedures, then shown in Fig. 6 (a), chuck table 51 is moved to the residing laser light irradiations of concentrator 522 zone of the laser light irradiation unit 52 of irradiated with pulse laser light, with many articles the 1st cut apart in the preset lines 231 the 1st of central authorities by optical device substrate 30 cut apart preset lines 231 be positioned concentrator 522 under.At this moment, shown in Fig. 6 (a), optical device substrate 30 be positioned such that by the end (left end among Fig. 6 (a)) that preset lines 231 is cut apart in the 1st of the central authorities of optical device substrate 30 be in concentrator 522 under.Then, will be from the focal point P of the pulse laser light of concentrator 522 irradiation near the upper surface of the optical device layer 21 that consists of optical device substrate 30 shown in Fig. 6 (a).Then, concentrator 522 irradiated with pulse laser light from laser light irradiation unit 52, and start not shown processing and give the unit, make chuck table 51 give speed direction shown in the arrow X1 in Fig. 6 (a) with the processing of regulation and move (laser processing groove formation step).And, when the 1st other end of cutting apart preset lines 231 arrived concentrator 522 under during the position, the irradiation of stop pulse laser beam also stops the movement of chuck table 51.As above, the 1st other end of cutting apart preset lines 231 that Fig. 6 (b) illustrates arrived concentrator 522 under under the state of position, concentrator 522 irradiated with pulse laser light from laser light irradiation unit 52, and start not shown processing and give the unit, make chuck table 51 give speed direction shown in the arrow X2 in Fig. 6 (b) with the processing of regulation and move (laser processing groove formation step).And, when the 1st end of cutting apart preset lines 231 arrived concentrator 522 under during the position, the irradiation of stop pulse laser beam also stops the movement of chuck table 51.Repeatedly implement this laser processing groove and form step, thereby shown in Fig. 6 (c), optical device substrate 30 is divided into 2 parts along the laser processing groove 301 of cutting apart preset lines 231 formation by the 1st of central authorities.
And the above-mentioned laser processing groove of setting as follows forms the processing conditions of step.
Wavelength: 355nm
Repetition rate: 10kHz
Average output: 7W
The focal point footpath:
Figure BDA00001869517800061
10 μ m
Processing feed speed: 100mm/ second
Under above-mentioned processing conditions, cut apart preset lines 231 along the 1st and shine 1 subpulse laser beam, thereby can form the laser processing groove about 30 μ m.Therefore, in order to cut off optical device substrate 30 fully, shine 4 subpulse laser beams to 1 line and get final product.
As mentioned above, be divided into 2 parts if cut apart preset lines 231 along the 1st of the central authorities by optical device substrate 30, then make chuck table 51 rotate 90 degree.Then, shown in Fig. 7 (a), chuck table 51 is moved to the residing laser light irradiations of concentrator 522 zone of the laser light irradiation unit 52 of irradiated with pulse laser light, make many articles the 2nd cut apart in the preset lines 232 the 2nd of central authorities by optical device substrate 30 cut apart preset lines 232 be positioned concentrator 522 under.At this moment, shown in Fig. 7 (a), optical device substrate 30 be positioned such that by the end (left end among Fig. 7 (a)) that preset lines 232 is cut apart in the 2nd of the central authorities of optical device substrate 30 be in concentrator 522 under.Then, will be from the focal point P of the pulse laser light of concentrator 522 irradiation near the upper surface of the optical device layer 21 that consists of optical device substrate 30 shown in Fig. 7 (a).Then, concentrator 522 irradiated with pulse laser light from laser light irradiation unit 52, and start not shown processing and give the unit, make chuck table 51 give speed direction shown in the arrow X1 in Fig. 7 (a) with the processing of regulation and move (laser processing groove formation step).And, when the 2nd other end of cutting apart preset lines 232 arrived concentrator 522 under during the position, the irradiation of stop pulse laser beam also stops the movement of chuck table 51.As above, the 2nd other end of cutting apart preset lines 232 that Fig. 7 (b) illustrates arrived concentrator 522 under under the state of position, concentrator 522 irradiated with pulse laser light from laser light irradiation unit 52, and start not shown processing and give the unit, make chuck table 51 give speed direction shown in the arrow X2 in Fig. 7 (b) with the processing of regulation and move (laser processing groove formation step).And, when the 2nd end of cutting apart preset lines 232 arrived concentrator 522 under during the position, the irradiation of stop pulse laser beam also stops the movement of chuck table 51.Implement 4 these laser processing groove for the optical device substrate 30 of illustrated execution mode and form step (shining 4 subpulse laser beams to 1 line), thereby optical device substrate 30 is cut off along the laser processing groove 302 of cutting apart preset lines 232 formation by the 2nd of central authorities shown in Fig. 7 (c), is split into 4 piece substrate 30a, 30b, 30c, 30d.
As above, form step if implemented the optical device substrate is divided into the piece of at least 4 piece substrate 30a, 30b, 30c, 30d, then implement along what be formed at each piece substrate 30a, 30b, 30c, 30d the 1st to cut apart preset lines 231 irradiating laser light and the 1st laser processing groove that forms laser processing groove forms step, the 2nd cuts apart preset lines 232 irradiating laser light and the 2nd laser processing groove that forms laser processing groove forms step along what be formed at each piece substrate 30a, 30b, 30c, 30d.The 1st laser processing groove forms step and the 2nd laser processing groove formation step is to use above-mentioned laser processing device shown in Figure 55 to implement.
When implementing the 1st laser processing groove formation step, from having implemented above-mentioned state that forms step, start processing and give the unit, will move to by means of the chuck table 51 that cutting belt T absorption has kept being divided into piece substrate 30a, 30b, 30c, the 30d of 4 parts image unit 53 under.Chuck table 51 be located in image unit 53 under the time, carry out to use image unit 53 and not shown control unit to detect the aligning operation of the machining area that should carry out laser processing of piece substrate 30a, 30b, 30c, 30d.Namely, image unit 53 and not shown control unit are carried out successively for the 2nd cutting apart preset lines 232 and process along the 2nd images such as pattern match of contraposition of concentrator 522 of cutting apart the laser light irradiation unit 52 of preset lines 232 irradiating laser light what forming at piece substrate 30a, 30b, 30c, 30d, carry out the aligning (alignment procedures) of laser light irradiation position.And, for being formed at cutting apart the 1st of direction that preset lines 232 intersects and cut apart preset lines 231 and carry out too aiming at of laser light irradiation position with the 2nd of piece substrate 30a, 30b, 30c, 30d.
If implemented above-mentioned alignment procedures, then shown in Fig. 8 (a), chuck table 51 is moved to the residing laser light irradiations of concentrator 522 zone of the laser light irradiation unit 52 of irradiated with pulse laser light, with the 1st of regulation cut apart preset lines 231 be positioned concentrator 522 under.At this moment, shown in Fig. 8 (a), piece substrate 30a, 30b, 30c, 30d be positioned such that the 1st end (left end among Fig. 8 (a)) of cutting apart preset lines 231 be in concentrator 522 under.Then, will be from the focal point P of the pulse laser light of concentrator 522 irradiation near the upper surface of the optical device layer 21 that consists of piece substrate 30a, 30b, 30c, 30d shown in Fig. 8 (a).Then, concentrator 522 irradiated with pulse laser light from laser light irradiation unit 52, and start not shown processing and give the unit, make chuck table 51 give speed direction shown in the arrow X1 in Fig. 8 (a) with the processing of regulation and move (the 1st laser processing groove forms step).And, shown in Fig. 8 (b) when the 1st other end of cutting apart preset lines 231 arrived concentrator 522 under during the position, the irradiation of stop pulse laser beam also stops the movement of chuck table 51.And the processing conditions that the 1st laser processing groove forms step can be the same terms with above-mentioned laser processing groove formation step that forms in the step.Its result, cutting apart preset lines 231 such as Fig. 8 (b) piece substrate 30a that is shown in, 30b, 30c, 30d along the 1st, to form the degree of depth be laser processing groove 303 about 30 μ m.
The 1st cut apart preset lines 231 and implement above-mentioned the 1st laser processing groove and form step along all that form at piece substrate 30a, 30b, 30c, 30d.Its result forms step according to all the 1st laser processing groove and forms apart from the laser processing groove 303 about upper surface 30 μ m at 4 piece substrate 30a, 30b, 30c, 30d shown in Fig. 8 (c).
Then, make the chuck table 51 that has kept implementing piece substrate 30a that the 1st laser processing groove forms step, 30b, 30c, 30d by means of cutting belt T absorption rotate 90 degree.And carry out along what form at piece substrate 30a, 30b, 30c, 30d and the 2nd cut apart preset lines 232 irradiating laser light and form step with the 2nd laser processing groove that forms laser processing groove.That is, shown in Fig. 9 (a), chuck table 51 is moved to the residing laser light irradiations of concentrator 522 zone of the laser light irradiation unit 52 of irradiated with pulse laser light, with the 2nd of regulation cut apart preset lines 232 be positioned concentrator 522 under.At this moment, shown in Fig. 9 (a), piece substrate 30a, 30b, 30c, 30d be positioned such that the 2nd end (left end among Fig. 9 (a)) of cutting apart preset lines 232 be in concentrator 522 under.Then will be from the focal point P of the pulse laser light of concentrator 522 irradiation near the upper surface of the optical device layer 21 that consists of piece substrate 30a, 30b, 30c, 30d shown in Fig. 9 (a).Then, concentrator 522 irradiated with pulse laser light from laser light irradiation unit 52, and start not shown processing and give the unit, make chuck table 51 give speed direction shown in the arrow X1 in Fig. 9 (a) with the processing of regulation and move (the 2nd laser processing groove forms step).And, when the 1st other end of cutting apart preset lines 231 arrived concentrator 522 under during the position, the irradiation of stop pulse laser beam also stops the movement of chuck table 51.And the processing conditions that the 2nd laser processing groove forms step can form step with above-mentioned the 1st laser processing groove, be that above-mentioned laser processing groove formation step that forms in the step is the same terms.Its result, cutting apart preset lines 232 such as Fig. 9 (b) piece substrate 30a that is shown in, 30b, 30c, 30d along the 2nd, to form the degree of depth be laser processing groove 304 about 30 μ m.
Above-mentioned the 1st laser processing groove forms step and the 2nd laser processing groove forms step by alternately implementing, shown in Fig. 9 (c), 4 piece substrate 30a, 30b, 30c, 30d the 1st are cut apart preset lines 231 and the 2nd and are cut apart laser processing groove 303 and the laser processing groove 304 that preset lines 232 forms and cut off along all, are split into each optical device.In the illustrated embodiment, implement respectively 4 order, 1 laser processing groove and form step and the 2nd laser processing groove formation step, thereby 4 piece substrate 30a, 30b, 30c, 30d the 1st can be cut apart preset lines 231 and the 2nd and cut apart preset lines 232 and cut off along all, be divided into each optical device 24.
The experimental result of dividing method in the past is described herein.Form the identical condition of the processing conditions of step and the 1st cut apart preset lines 231 and the 2nd and cut apart preset lines 232 and implement the 1st laser processing groove and form step along all of optical device substrate 30 to form step and the 2nd laser processing groove with above-mentioned the 1st laser processing groove, cut apart preset lines 231 and the 2nd along the 1st and cut apart preset lines 232 and formed laser processing groove.And the initial preset lines of cutting apart has been retracted to 47995 μ m from 48000 μ m as can be known to the last length of cutting apart preset lines in the mensuration optical device substrate 30.Then, cut apart all laser processing groove that preset lines 232 forms and implement the 2nd laser processing groove and form step along cutting apart preset lines 231 and the 2nd along the 1st, measure the initial preset lines of cutting apart and be retracted to 47990 μ m from 48000 μ m as can be known to the last length of cutting apart preset lines.And then, all laser processing groove that form along implementing the 2nd laser processing groove formation step are implemented the 3rd laser processing groove and are formed step, measure the initial preset lines of cutting apart and have been retracted to 47980 μ m from 48000 μ m as can be known to the last length of cutting apart preset lines.Then, all laser processing groove that form along implementing the 3rd laser processing groove formation step are implemented the 4th laser processing groove and are formed steps, thereby optical device substrate 30 is divided into each optical device.In above-mentioned dividing method in the past owing to implement that the 3rd laser processing groove forms step so that shrink be accumulated as 20 μ m, surpassed 10 μ m as permissible value.
The experimental result of above-mentioned dividing method among the present invention then, is described.Implement as mentioned above piece and form step, optical device substrate 30 is divided into 4 piece substrate 30a, 30b, 30c, 30d.The 1st cut apart preset lines 231 and the 2nd and cut apart preset lines 232 and implement that above-mentioned the 1st laser processing groove forms step and the 2nd laser processing groove forms step along all of piece substrate 30a, 30b, 30c, 30d that are split into 4.And, to being retracted to 23997 μ m from 24000 μ m from the initial preset lines of cutting apart as can be known to the last length of cutting apart preset lines among each piece substrate 30a, 30b, 30c, the 30d.Then, cut apart all laser processing groove that preset lines 232 forms and implement the 2nd laser processing groove and form step along cutting apart preset lines 231 and the 2nd along the 1st, to being retracted to 23995 μ m from 24000 μ m from the initial preset lines of cutting apart as can be known to the last length of cutting apart preset lines among each piece substrate 30a, 30b, 30c, the 30d.And then, all laser processing groove that form along implementing the 2nd laser processing groove formation step are implemented the 3rd laser processing groove and are formed step, to being retracted to 23993 μ m from 24000 μ m from the initial preset lines of cutting apart as can be known to the last length of cutting apart preset lines among each piece substrate 30a, 30b, 30c, the 30d.Then all laser processing groove that form along implementing the 3rd laser processing groove formation step are implemented the 4th laser processing groove and are formed steps, and each piece substrate 30a, 30b, 30c, 30d are divided into each optical device.As above, in the dividing method of the invention described above owing to implement that the 3rd laser processing groove forms step so that shrink be accumulated as 7 μ m, below 10 μ m as permissible value.
As above, in above-mentioned dividing method of the present invention, after optical device substrate 30 is divided into piece substrate 30a, 30b, 30c, 30d, cutting apart preset lines 231 and the 2nd along the 1st cuts apart preset lines 232 and implements alternately that the 1st laser processing groove forms step and the 2nd laser processing groove forms step, thereby the contraction accumulation of piece substrate 30a, 30b, 30c, 30d can be converged in the permissible value, therefore until implement the 1st last laser processing groove and form step and the 2nd laser processing groove and form step location and all need not to carry out position correction, can improving production efficiency.
More than based on illustrated execution mode the present invention has been described, yet the present invention is not limited only to execution mode, can carry out various distortion in purport scope of the present invention.Illustrated in the above-mentioned execution mode and used metal substrate as the example of establishing substrate that moves of assembling optical device layer, established substrate and also have effect yet confirmed Si, Ge, GaAs be used for moving.

Claims (1)

1. the dividing method of an optical device substrate, this optical device substrate has substrate and is laminated in the optical device layer on the surface of this substrate, this optical device layer by the 1st side upwardly extending many articles the 1st cut apart preset lines and with the 1st cut apart upwardly extending many articles the 2nd of the 2nd side of preset lines quadrature and cut apart preset lines and divide each zone that forms and be formed with optical device
The dividing method of this optical device substrate is characterised in that and comprises:
The optical device substrate attaches step, the optical device substrate is attached at the surface of the cutting belt that is assemblied in ring-shaped frame;
Piece forms step, cuts apart preset lines and the 2nd along the 1st of the central authorities of the optical device substrate on the surface by being attached at cutting belt and cuts apart preset lines irradiating laser light, and the optical device substrate is divided at least 4 piece substrates;
The 1st laser processing groove forms step, the 1st cuts apart preset lines irradiating laser light along what be formed at each piece substrate, thereby forms laser processing groove; And
The 2nd laser processing groove forms step, and the 2nd cut apart preset lines irradiating laser light along what be formed at each piece substrate, thereby form laser processing groove,
The 1st laser processing groove forms step and the 2nd laser processing groove forms step by alternately implementing, and the 1st cuts apart preset lines and the 2nd and cuts apart preset lines and cut off each piece substrate and be divided into each optical device along all.
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