CN102879462B - Metal defect eddy current detection device and probe thereof - Google Patents
Metal defect eddy current detection device and probe thereof Download PDFInfo
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Abstract
The invention discloses a frequency mixing technology-based metal defect eddy current detection device and a probe structure thereof. According to the device, the conventional eddy current technology and low-frequency far field eddy current technology are combined, so that one-time complete detection on metal material defects in a wider range can be realized. According to the device, a high-frequency excitation signal and a low-frequency excitation signal are applied to the probe; the conventional eddy current detection mode is adopted by the high-frequency signal; and the far field eddy current detection mode is adopted by the low-frequency signal. The probe is of a differential structure and consists of two groups of coils; and the two groups of coils are symmetrically arranged in a mirror image manner. Each group of coils consists of a large coil and a small coil of which the axes are away from each other for a certain distance; and the two coils are placed according to a far field principle. A low-frequency sinusoidal signal is conducted through the large coil in the probe; a high-frequency sinusoidal signal is conducted through the small coil; and the small coil is used as a detection coil to receive the high-frequency signal and the low-frequency signal. According to the device, defect information of an upper surface and a lower surface of a plate-shaped metal material or an inner wall and an outer wall of a tubular metal material can be simultaneously and accurately acquired in a large range.
Description
Technical field
The present invention relates to frequency mixing technique, and a kind of metal material defect the cannot-harm-detection device and related probes structure.
Background technology
The defects detection of metal material is significant according to electromagnetic induction principle at military industry field, the coil being loaded with alternating current can induce eddy current in the metal material near it, the eddy current of induction can affect original Distribution of Magnetic Field around magnetic test coil conversely, thus cause the measurement impedance of the magnetic test coil eddy current that changes to carry the thickness of metal material, the information such as defect, conductivity, the relevant physical parameter of metal material can be known by inference, the existing defects etc. as whether by measuring the coil impedance change caused because of eddy current.
Traditional eddy current testing device, because equipment is simple, easy to use, not pollution, has greater advantage, but is limited to the skin effect of eddy current in metal material defects detection, is generally only suitable for the measurement on metal material surface and nearly surface; Far-field eddy for metallic conduit detection does not have the restriction of skin effect, the defect of sensitivity technique pipe inside and outside wall that can be identical, but more difficult accurate differentiation defect position.
Summary of the invention
The object of this invention is to provide a kind of metal defect eddy current detection device and probe thereof, thus overcome the part or all of defect of prior art.
For achieving the above object, the technical solution used in the present invention is as follows:
The present invention is made up of two coil groups for the probe carrying out metal defect EDDY CURRENT, each coil groups is made up of a large coil and a small coil, large coil in each coil groups and small coil are arranged according to far field mode, and described two coil groups are mirror image arrangement; In each coil groups, large coil is connected with low-frequency excitation signal, and small coil is connected with high-frequency excitation signal and for detecting high-frequency signal and low frequency signal.
The metal defect eddy current detection device that the present invention contains above-mentioned probe also comprises singlechip controller, high frequency sinusoidal signal circuit for generating and 90 degree of phase-shift circuits, Low Frequency Sine Signals circuit for generating and 90 degree of phase-shift circuits, communication module, power amplification circuit, magnifier, frequency-division filter circuit, the first phase-sensitive detection circuit, the second phase-sensitive detection circuit, amplifying circuit and host computers, described singlechip controller and high frequency sinusoidal signal circuit for generating, Low Frequency Sine Signals circuit for generating, communication module connects respectively, high frequency sinusoidal signal circuit for generating, Low Frequency Sine Signals circuit for generating is connected with power amplification circuit respectively, described probe and power amplification circuit, magnifier connects respectively, frequency-division filter circuit and magnifier, first phase-sensitive detection circuit, second phase-sensitive detection circuit connects respectively, high frequency sinusoidal signal circuit for generating, Low Frequency Sine Signals circuit for generating is connected with respective 90 degree of phase-shift circuits respectively, described high frequency sinusoidal signal circuit for generating and 90 degree of phase-shift circuits thereof are connected with described first phase-sensitive detection circuit respectively, described Low Frequency Sine Signals circuit for generating and 90 degree of phase-shift circuits thereof are connected with the second phase-sensitive detection circuit respectively, described first phase-sensitive detection circuit, second phase-sensitive detection circuit, communication module is connected with amplifying circuit respectively, described communication module is connected with host computer.
Further, metal defect eddy current detection device of the present invention also comprises mechanical scanner, and described host computer is connected with the motion control card of mechanical scanner, and described probe is fixed on mechanical scanner.
Further, each described 90 degree of phase-shift circuits of metal defect eddy current detection device of the present invention comprise OP37 chip, first resistance R7, second resistance R8, 3rd resistance R6, first electric capacity C9, second electric capacity C10, 3rd electric capacity C11, 14 electric capacity C7 and the 15 electric capacity C8, 1st pin of described OP37 chip is connected with the 2nd pin, 1st pin of OP37 chip is all connected with one end of the second resistance R8 with the first resistance R7 with the 2nd pin, the other end of the first resistance R7 is connected with the 6th pin of OP37 chip, the other end of the second resistance R8 is connected with the 5th pin of OP37 chip, and the 5th pin of OP37 chip is by the 3rd electric capacity C11 ground connection, 6th pin of OP37 chip is connected with one end of the 3rd resistance R6, the other end of the 3rd resistance R6 is connected with the 7th pin of OP37 chip, 8th pin of OP37 chip is respectively by the 14 electric capacity C7, 15 electric capacity C8 ground connection, and the 8th pin of OP37 chip connects positive 12v power supply, 4th pin of OP37 chip connects negative 12v power supply, and the 4th pin of OP37 chip is respectively by the first electric capacity C9, second electric capacity C10 ground connection, 3rd pin of OP37 chip connects input signal.
Further, described first phase-sensitive detection circuit of metal defect eddy current detection device of the present invention and the second phase-sensitive detection circuit are formed by two phase-sensitive detection circuits, each described phase-sensitive detection circuit comprises AD734AQ chip and OP37 chip, 1st pin of described AD734AQ chip connects the voltage signal VOLSIG gathered, 2nd pin of AD734AQ chip, 3rd pin, 4th pin, 5th pin, 7th pin, 10th pin is ground connection respectively, 6th pin of AD734AQ chip connects input signal, 8th pin of AD734AQ chip connects negative 12v power supply, and the 8th pin of AD734AQ chip is respectively by the 4th electric capacity C24, 5th electric capacity C25 ground connection, 14th pin of AD734AQ chip connects positive 12v power supply, and the 14th pin of AD734AQ chip is respectively by the 6th electric capacity C16, 7th electric capacity C18 ground connection, 11st pin of AD734AQ chip is connected with the 12nd pin, and the 11st pin of AD734AQ chip and the 12nd pin connect one end of the 4th resistance R17 altogether, 1st pin of described OP37 chip and one end of the 5th resistance R15, one end of 8th electric capacity C20 connects respectively, the other end of the 5th resistance R15 is connected with the 2nd pin of OP37 chip, and the 2nd pin of OP37 chip is by the 6th resistance R16 ground connection, 3rd pin of OP37 chip is by the 9th electric capacity C21 ground connection, and the 3rd pin of OP37 chip connects one end of the 7th resistance R18, the other end of the 7th resistance R18 connects the other end of described 4th resistance R17 and the other end of described 8th electric capacity C20 respectively, 4th pin of OP37 chip connects negative 12v power supply, and the 4th pin of OP37 chip is respectively by the tenth electric capacity C22, 11 electric capacity C23 ground connection, 8th pin of OP37 chip connects positive 12v power supply, and the 8th pin of OP37 chip is respectively by the 12 electric capacity C17, 13 electric capacity C19 ground connection
Compared with prior art, advantage of the present invention is:
1. high frequency sinusoidal signal is up to several megahertz, accurately can calculate the distance of sheet metal upper strata or metal pipe material inwall and probe accordingly;
2. low frequency signal adopts far-field eddy mode, overcomes the restriction of skin effect, increases defectoscopy scope, by its broaden application in plate-shaped metal material detects;
3. adopt height frequency mixing technique, comprehensive low-and high-frequency detection signal, quick and precisely can obtain the defect information of metal material in a big way;
4. adopt DDS integrated chip to produce sinusoidal signal, the frequency of desired signal, amplitude and duration change are convenient, adopt high-performance multiplication chip and Broadband amplifier chip to improve circuit performance;
5. far field low frequency vortex structure also can be applied to plate-shaped metal material by apparatus of the present invention, simultaneously in conjunction with traditional eddy current, can realize tabular in a big way or tubular metal material defects detection
6. pick-up unit of the present invention carries out mixing frequency excitation mode to its probe, combines conventional vortex and remote field eddy current technology, can obtain the defect information of the upper and lower surface of plate-shaped metal material and the inside and outside wall of tubular metal material in a big way simultaneously.
Accompanying drawing explanation
Fig. 1 is the sonde configuration schematic diagram that high frequency of the present invention adopts from sensing mode work;
Fig. 2 is the structural representation of metal defect eddy current detection device of the present invention;
Fig. 3 is the high frequency sinusoidal signal circuit for generating figure of one embodiment of the present invention;
Fig. 4 is 90 degree of phase-shift circuit figure of one embodiment of the present invention;
Fig. 5 is the phase-sensitive detection circuit figure of one embodiment of the present invention.
embodiment
Present invention employs mixing eddy detection technology, apply high and low frequency two kinds of sinusoidal excitation signals to probe, high-frequency signal adopts conventional vortex detection mode, and low frequency signal adopts precursor in far field mode
The present invention is for improving dynamic range of signals, and its probe adopts differential probe structure.As shown in Figure 1, it is made up of two coil groups the concrete structure of the present invention's probe, and two coil groups are mirror image arrangement; Each coil groups is made up of an axle center large coil in a distance and small coil and large coil in each coil groups and small coil are arranged according to far field mode; In each coil groups, large coil passes to Low Frequency Sine Signals, and small coil passes to high frequency sinusoidal signal, the signal magnetic test coil of small coil, receive in high and low frequency signal graph 1, high frequency adopts and detects from sensing mode, and therefore the excitation small coil of high frequency is same coil with detecting small coil.
As shown in Figure 2, utilize probe of the present invention to carry out metal defect eddy current detection device and mainly comprise probe, singlechip controller, high-frequency signal circuit for generating and 90 degree of phase-shift circuits, low frequency signal circuit for generating and 90 degree of phase-shift circuits, communication module, power amplification circuit, magnifier, frequency-division filter circuit, the first phase-sensitive detection circuit I, second phase-sensitive detection circuit II, amplifying circuit and host computers.Wherein, singlechip controller and high-frequency signal circuit for generating, low frequency signal circuit for generating, communication module connects respectively, high-frequency signal circuit for generating, low frequency signal circuit for generating is connected with power amplification circuit respectively, probe and power amplification circuit, magnifier connects respectively, frequency-division filter circuit and magnifier, first phase-sensitive detection circuit I, second phase-sensitive detection circuit II connects respectively, high-frequency signal circuit for generating, low frequency signal circuit for generating is connected with respective 90 degree of phase-shift circuits respectively, high-frequency signal circuit for generating and 90 degree of phase-shift circuits thereof are connected with described first phase-sensitive detection circuit I respectively, low frequency signal circuit for generating and 90 degree of phase-shift circuits thereof are connected with the second phase-sensitive detection circuit II respectively, first phase-sensitive detection circuit I, second phase-sensitive detection circuit II, serial communication module is connected with amplifying circuit respectively, communication module is connected with host computer.
Relatively common amplifier, instrument amplifier adopts Differential Input mode, suppresses common mode interference, can improve accuracy of detection.Relatively common amplifier, power amplification circuit can improve signal carrying load ability, exports larger current, increases the intensity of excitation field and induced field.Host computer carries out the control of corresponding sports mode (such as, when start and stop, movement velocity, direction, acceleration etc.) to mechanical scanner by motion control card.
When using metal defect eddy current detection device of the present invention to detect plate-shaped metal material, detect degree of accuracy for improving, configurable mechanical scanner, is fixed on probe on mechanical scanner; Host computer is connected with the motion control card (i.e. scanning monitor) of mechanical scanner.
In the present invention, the signal that high frequency sinusoidal signal circuit for generating and Low Frequency Sine Signals circuit for generating produce is sinusoidal signal.As shown in Figure 3, as one embodiment of the present invention, high frequency sinusoidal signal circuit for generating with AD9832 chip for core is formed.Wherein, 1st pin of AD9832 connects in analog by resistance R1, 2nd pin of AD9832, 3rd pin connects in analog by electric capacity C3, 4th pin of AD9832 connects positive 3.3v power supply by zero Europe resistance, 5th pin of AD9832 connects digitally, 7th pin of AD9832, 8th pin, 9th pin is connected with the relevant control mouth of singlechip controller respectively, 10th pin of AD9832, 11st pin, 12nd pin connects digitally, 13rd pin of AD9832 connects in analog, 14th pin of AD9832 by resistance R3 be connected in analog, 15th pin of AD9832 and positive 3.3v power supply, one pin of electric capacity C1 connects, 16th pin of AD9832 is by electric capacity C2 and positive 3.3v power supply, one end of electric capacity C1 connects, another pin of electric capacity C1 connects in analog, 6th pin of AD9832 is connected with the 3rd pin of active clock, 4th pin of active clock connects positive 3.3v power supply, and by electric capacity C5 ground connection, 2nd pin of active clock connects digitally, 1st pin of active clock is unsettled
Integrated chip AD9832 in high frequency sinusoidal signal circuit for generating and Low Frequency Sine Signals circuit for generating controls to produce high frequency by singlechip controller, low frequency two-way is sinusoidal wave, two paths of signals carries out power amplification after straight and drives probe in DDS1, DDS2 signal generating circuit, all add 90 degree of phase-shift circuits, thus produces the low-and high-frequency signal orthogonal with pumping signal
As shown in Figure 4, the 1st pin that the 90 degree of phase-shift circuits be connected with high frequency sinusoidal signal circuit for generating are formed OP37 chip with chip OP37 for core is connected with the 2nd pin, 1st pin of OP37 chip and the 2nd pin and the first resistance R7, one end of second resistance R8 is connected, the other end of the first resistance R7 is connected with the 6th pin of OP37 chip, the other end of the second resistance R8 is connected with the 5th pin of OP37 chip, and the 5th pin of OP37 chip is by the 3rd electric capacity C11 ground connection, 6th pin of OP37 chip is connected with one end of the 3rd resistance R6, the other end of the 3rd resistance R6 is connected with the 7th pin of OP37 chip, 8th pin of OP37 chip is respectively by the 14 electric capacity C7, 15 electric capacity C8 ground connection, and the 8th pin of OP37 chip connects positive 12v power supply, 4th pin of OP37 chip connects negative 12v power supply, and the 4th pin of OP37 chip is respectively by the first electric capacity C9, second electric capacity C10 ground connection, 3rd pin of OP37 chip connects input signal.
The structure that high frequency sinusoidal signal produces circuit and 90 degree phase-shift circuits thereof respectively as shown in Figure 3, Figure 4 Low Frequency Sine Signals circuit for generating and 90 degree phase-shift circuits thereof produce circuit with high frequency sinusoidal signal and 90 degree of phase-shift circuits are substantially identical, distinguish the electric capacity value difference being phase-shift circuit
Pumping signal is popped one's head in through power amplification rear drive.Power amplification circuit of the present invention can adopt class AB push-pull amplifying circuit
The output signal of probe after magnifier and point frequent filtering circuit respectively with power amplification before same frequency pumping signal and send into two-way phase-sensitive detector (PSD) with its 90 degree of orthogonal signal and carry out multiplying
Effective constituent due to probe output is the sinusoidal signal with reference signal same frequency, the difference frequency part of the two product is direct current signal and noise and reference signal do not have correlativity to be a kind of weak signal extraction technology with strong anti-interference ability by fully being suppressed phase sensitive detection technology by phase-sensitive detector (PSD), greatly can improve system signal noise ratio
First phase-sensitive detection circuit I and the second phase-sensitive detection circuit II are formed by two phase-sensitive detection circuit unit, process respectively to high and low frequency signal.The formation of four phase-sensitive detection circuit unit is identical, all as shown in Figure 5.As shown in Figure 5, each phase-sensitive detection circuit unit is made up of multiplier and low-pass filter, multiplier and low-pass filter respectively with AD734AQ chip and OP37 chip for core wherein, 1st pin of AD734AQ chip meets gathered voltage signal VOLSIG, 2nd pin of AD734AQ chip, 7th pin, 10th pin is ground connection respectively, 3rd pin of AD734AQ chip, 4th pin, 5th pin also distinguishes ground connection, 6th pin of AD734AQ chip meets reference signal SIGNAL, 8th pin of AD734AQ chip connects negative 12v power supply, and the 8th pin of AD734AQ chip is respectively by the 4th electric capacity C24, 5th electric capacity C25 ground connection, 14th pin of AD734AQ chip connects positive 12v power supply, and the 14th pin of AD734AQ chip is respectively by the 6th electric capacity C16, 7th electric capacity C18 ground connection, 11st pin of AD734AQ chip is connected with the 12nd pin, and the 11st pin of AD734AQ chip and the 12nd pin connect one end of the 4th resistance R17 altogether.1st pin of OP37 chip and one end of the 5th resistance R15, one end of 8th electric capacity C20 connects respectively, the other end of the 5th resistance R15 is connected with the 2nd pin of OP37 chip, and the 2nd pin of OP37 chip is by the 6th resistance R16 ground connection, 3rd pin of OP37 chip is by the 9th electric capacity C21 ground connection, and the 3rd pin of OP37 chip connects one end of the 7th resistance R18, the other end of the 7th resistance R18 connects the other end of the 4th resistance R17 and the other end of the 8th electric capacity C20 respectively, 4th pin of OP37 chip connects negative 12v power supply, and the 4th pin of OP37 chip is respectively by the tenth electric capacity C22, 11 electric capacity C23 ground connection, 8th pin of OP37 chip connects positive 12v power supply, and the 8th pin of OP37 chip is respectively by the 12 electric capacity C17, 13 electric capacity C19 ground connection
First phase-sensitive detection circuit I and the difference of the phase-sensitive detection circuit unit in the second phase-sensitive detection circuit II are to connect voltage signal VOLSIG and the 6th pin by the 1st pin of AD734AQ chip, and to meet reference signal SIGNAL different.1st voltage signal that pin connects of the two panels AD734AQ chip in the first phase-sensitive detection circuit I is high-frequency detection voltage signal, and two panels AD734AQ chip the 1st voltage signal that pin connects in the second phase-sensitive detection circuit II is low frequency detectable voltage signals.6th pin of the two panels AD734AQ chip in the first phase-sensitive detection circuit I connects high-frequency signal and high frequency 90 degree of phase shift signals respectively, and the 6th pin of the two panels AD734AQ chip in the second phase-sensitive detection circuit II connects low frequency signal and low frequency 90 degree of phase shift signals respectively.
Metal defect eddy current detection device of the present invention is based on frequency mixing technique, the probe shown in Fig. 1 is utilized to detect metal defect, low frequency adopts precursor in far field mode, and high frequency adopts conventional vortex detection mode, combines far-field eddy and conventional vortex detection technique.
During high-frequency detection, metal defect eddy current detection device of the present invention utilizes Lift-off effect to detect the defect situation of sheet metal upper surface or inside pipe wall, the survey frequency of circuit can up to several megahertz, near this frequency band, due to skin effect, the eddy current responded in most metal material almost will be tending towards material surface completely, therefore greatly can suppress the signal difference caused because metal material thickness is different or different metal material conductivity is different, comparatively accurately obtain the distance of popping one's head in from sheet metal upper surface or inside pipe wall
When low frequency detects, the distance of drive coil (i.e. large coil) and magnetic test coil (i.e. small coil) is generally the 2-3 of metal pipe material internal diameter doubly (when test specimen is tubing), or for sheet metal thickness 2-3 doubly the electromagnetic field that produces of (when test specimen is sheet material) drive coil through the upper surface of plate-shape metal or the inside pipe wall of tubular metal to external diffusion, inwardly spread through the lower surface of plate-shape metal or the pipe outer wall of tubular metal in far-field region, the amplitude that detected coil receives the signal that magnetic test coil receives is relevant with metal material thickness with phase place, if existing defects, then signal will change, judge the variation in thickness situation of metal material accordingly, because can be obtained the flatness information of sheet metal upper surface or inside pipe wall by high-frequency signal, in addition low frequency detection signal more intactly can obtain the defect situation employing frequency mixing technique of sheet metal upper and lower surface or pipe inside and outside wall, that has widened conventional vortex metal material defect can sensing range, and disposablely can obtain more complete defect information
Host computer is equipped with the EDDY CURRENT software that labview writes, labview software can be selected to carry out top that probe is placed in test specimen (as conductor metal) by Data Control, collection and display, sweep velocity and the excitation frequency of mechanical scanner are set in the labview program of host computer, after starting scanning monitor, probe can be made to scan test specimen as requested
Singlechip controller control AD9832 chip produces low-and high-frequency pumping signal and be sent to probe after power amplification, probe moves with mechanical hook-up, in scanning test specimen process, the relevant information of the test specimen entrained by eddy current low-and high-frequency detection signal gathered, is sent to instrument amplifier and is amplified and the corresponding input pin being sent to the multiplier chip in the first phase-sensitive detection circuit I and the second phase-sensitive detection circuit II after filtering together with high-frequency signal, low frequency signal and respective 90 degree of phase shift signals respectively.
The sine and cosine of the phase differential between the respective amplitude of the two-way input signal of the two-way direct current signal that the low-pass filter in phase-sensitive detection circuit obtains and multiplier (i.e. detection signal and with reference signal frequently) and signal thereof about the amplitude due to reference signal known, conveniently can be tried to achieve amplitude and the phase place of detection signal by the two-way direct current signal obtained.Amplitude and the phase information of the high and low frequency detection signal of probe can be obtained respectively by the first phase-sensitive detection circuit I and this two-way phase-sensitive detection circuit of the second phase-sensitive detection circuit II.After labview program in host computer carries out necessary filtering process to the eddy current testing signal gathered, draw the defect information of tested metal material according to the amplitude of high and low frequency eddy current testing signal and phase information
Claims (5)
1. one kind for carrying out the probe of metal defect EDDY CURRENT, it is characterized in that: it is made up of two coil groups, each coil groups is made up of a large coil and a small coil, large coil in each coil groups and small coil are arranged according to far field mode, and described two coil groups are mirror image arrangement; In each coil groups, large coil is connected with low-frequency excitation signal, and small coil is connected with high-frequency excitation signal and for detecting high-frequency signal and low frequency signal.
2. a metal defect eddy current detection device for the probe containing claim 1, is characterized in that: also comprise singlechip controller, high frequency sinusoidal signal circuit for generating and 90 degree of phase-shift circuits, Low Frequency Sine Signals circuit for generating and 90 degree of phase-shift circuits, communication module, power amplification circuit, magnifier, frequency-division filter circuit, the first phase-sensitive detection circuit, the second phase-sensitive detection circuit, amplifying circuit and host computers, described singlechip controller and high frequency sinusoidal signal circuit for generating, Low Frequency Sine Signals circuit for generating, communication module connects respectively, high frequency sinusoidal signal circuit for generating, Low Frequency Sine Signals circuit for generating is connected with power amplification circuit respectively, described probe and power amplification circuit, magnifier connects respectively, frequency-division filter circuit and magnifier, first phase-sensitive detection circuit, second phase-sensitive detection circuit connects respectively, high frequency sinusoidal signal circuit for generating, Low Frequency Sine Signals circuit for generating is connected with respective 90 degree of phase-shift circuits respectively, described high frequency sinusoidal signal circuit for generating and 90 degree of phase-shift circuits thereof are connected with described first phase-sensitive detection circuit respectively, described Low Frequency Sine Signals circuit for generating and 90 degree of phase-shift circuits thereof are connected with the second phase-sensitive detection circuit respectively, described first phase-sensitive detection circuit, second phase-sensitive detection circuit, communication module is connected with amplifying circuit respectively, described communication module is connected with host computer.
3. metal defect eddy current detection device according to claim 2, it is characterized in that: also comprise mechanical scanner, described host computer is connected with the motion control card of mechanical scanner, described probe is fixed on mechanical scanner.
4. the metal defect eddy current detection device according to Claims 2 or 3, it is characterized in that: each described 90 degree of phase-shift circuits comprise OP37 chip, first resistance (R7), second resistance (R8), 3rd resistance (R6), first electric capacity (C9), second electric capacity (C10), 3rd electric capacity (C11), 14 electric capacity (C7) and the 15 electric capacity (C8), 1st pin of described OP37 chip is connected with the 2nd pin, 1st pin of OP37 chip is all connected with the first resistance (R7) one end with the second resistance (R8) with the 2nd pin, the other end of the first resistance (R7) is connected with the 6th pin of OP37 chip, the other end of the second resistance (R8) is connected with the 5th pin of OP37 chip, and the 5th pin of OP37 chip is by the 3rd electric capacity (C11) ground connection, 6th pin of OP37 chip is connected with one end of the 3rd resistance (R6), the other end of the 3rd resistance (R6) is connected with the 7th pin of OP37 chip, 8th pin of OP37 chip is respectively by the 14 electric capacity (C7), 15 electric capacity (C8) ground connection, and the 8th pin of OP37 chip connects positive 12v power supply, 4th pin of OP37 chip connects negative 12v power supply, and the 4th pin of OP37 chip is respectively by the first electric capacity (C9), second electric capacity (C10) ground connection, 3rd pin of OP37 chip connects input signal.
5. the metal defect eddy current detection device according to Claims 2 or 3, it is characterized in that: described first phase-sensitive detection circuit and the second phase-sensitive detection circuit are formed by two phase-sensitive detection circuits, each described phase-sensitive detection circuit comprises AD734AQ chip and OP37 chip, 1st pin of described AD734AQ chip connects the voltage signal VOLSIG gathered, 2nd pin of AD734AQ chip, 3rd pin, 4th pin, 5th pin, 7th pin, 10th pin is ground connection respectively, 6th pin of AD734AQ chip connects input signal, 8th pin of AD734AQ chip connects negative 12v power supply, and the 8th pin of AD734AQ chip is respectively by the 4th electric capacity (C24), 5th electric capacity (C25) ground connection, 14th pin of AD734AQ chip connects positive 12v power supply, and the 14th pin of AD734AQ chip is respectively by the 6th electric capacity (C16), 7th electric capacity (C18) ground connection, 11st pin of AD734AQ chip is connected with the 12nd pin, and the 11st pin of AD734AQ chip and the 12nd pin connect one end of the 4th resistance (R17) altogether, 1st pin of described OP37 chip and one end of the 5th resistance (R15), one end of 8th electric capacity (C20) connects respectively, the other end of the 5th resistance (R15) is connected with the 2nd pin of OP37 chip, and the 2nd pin of OP37 chip is by the 6th resistance (R16) ground connection, 3rd pin of OP37 chip is by the 9th electric capacity (C21) ground connection, and the 3rd pin of OP37 chip connects one end of the 7th resistance (R18), the other end of the 7th resistance (R18) connects the other end of described 4th resistance (R17) and the other end of described 8th electric capacity (C20) respectively, 4th pin of OP37 chip connects negative 12v power supply, and the 4th pin of OP37 chip is respectively by the tenth electric capacity (C22), 11 electric capacity (C23) ground connection, 8th pin of OP37 chip connects positive 12v power supply, and the 8th pin of OP37 chip is respectively by the 12 electric capacity (C17), 13 electric capacity (C19) ground connection.
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| CN103196996B (en) * | 2013-04-17 | 2016-06-08 | 浙江大学 | A kind of eddy current testing device for carrying out metal defect detection and eddy current probe thereof |
| CN105241952B (en) * | 2015-10-30 | 2018-03-23 | 湘潭大学 | A kind of channel bend defect inspection method and detection means based on far-field eddy |
| CN106442711B (en) * | 2016-08-08 | 2020-04-21 | 江南大学 | Nondestructive testing method based on eddy current reflection and transmission |
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