CN102879411B - Method for testing crystal by X-ray diffraction - Google Patents
Method for testing crystal by X-ray diffraction Download PDFInfo
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Abstract
Disclosed is a method for testing a crystal by X-ray diffraction. The crystal comprises a single crystal substrate and at least one layer of lattice mismatch materials growing on the single crystal substrate. The method includes firstly, scanning a reciprocal space mapping of a sample, and calculating a motion speed ratio between a Omega-axial and a 2Theta-axial to be 1:n according to the reciprocal space mapping; and secondly, scanning the sample to be tested at the speed ratio of 1:n of the Omega-axial and the 2Theta-axial in a linking manner, and calculating interplanar spacing of the at least one layer of lattice mismatch materials according to an acquired scanning curve. By the method compared with the RSM (response surface methodology), lattice coefficient of the lattice mismatch materials can be quickly measured, speed can be increased by 20 times and precision in measurement is close to that in the RSM .
Description
Technical field
The present invention relates to a kind of method of utilizing X-ray diffraction (XRD) to test crystal, relate in particular to a kind of method of utilizing X-ray diffraction (XRD) to test the lattice mismatch material of growing in single crystalline substrate.
Background technology
X-ray diffraction is a kind of conventional method of crystal being carried out to analytical test, by the X ray diffracting spectrum of analyzing crystal, can obtain the information such as grating constant, component, thickness, strain, stress, relaxivity of crystal.
Known two kinds of scan modes for Crystal X-Ray Diffraction test.Be ω-2 θ scan modes, wherein, ω axle and 2 θ axles link with the velocity ratio of 1: 2, the direction of the corresponding X ray incident of ω axle, the direction of the corresponding diffracted rays of 2 θ axles.By ω-2 θ scanning, obtain ω-2 θ curve, for sample analysis.Another kind of scan mode is reciprocal space figure (Reciprocal Space Maps, be called for short RSM) scanning, be by ω rel scanning (being rocking curve scanning) and the scan mode that θ scanning in ω-2 combines, after scanning, obtain reciprocal space figure (RSM figure), for sample analysis.
Adopt θ sweep test speed in ω-2 fast, but when the crystal prototype that comprises multilayer material is tested, the corresponding crystal face of each layer must be parallel, if the corresponding crystal face of each layer is not parallel, adopt θ scanning in ω-2 can not obtain the diffraction peak of layers of material, therefore cannot scan by which.What the RSM figure that adopts RSM scanning to obtain comprised contains much information, the information such as interplanar distance, relaxivity, degree of tilt that can reflect material, reflected that exactly the fine structure in sample changes, it is a kind of desirable sample measurement mode, but this scan mode is time-consuming, obtain sample message accurately and need to carry out ω-2 θ scanning many times, testing each sample needs several even dozens ofs hour, if when the inclination angle of layers of material, grating constant differ larger, required time is longer.
When growth and the unmatched material of substrate lattice in single crystalline substrate are when (being called lattice mismatch material), particularly when the grating constant of the material of growing in single crystalline substrate and substrate differs large (being commonly referred to as large mismatch material), in order to reduce the defect in material, conventionally the multilayer transition film of growing between single crystalline substrate and large mismatch material, the grating constant of each layer film tapers to from the grating constant of single crystalline substrate the grating constant that approaches large mismatch material, not parallel between each layer film and the large crystal face of mismatch material and the corresponding crystal face of substrate, there is certain inclination angle.Now, when multilayer material being carried out to XRD test, as mentioned above, according to the conventional method, can only use reciprocal space figure (RSM) scanning, and can not use ω-2 θ scanning.But, as previously mentioned, reciprocal space figure (RSM) scans time-consuming, if expensive XRD equipment is measured for RSM, can only test several samples every day, so low work efficiency must make the testing cost of single sample increase, and causes a lot of researchists can not utilize RSM to measure.
Summary of the invention
For the problems referred to above, the object of this invention is to provide a kind of X-ray diffraction (XRD) that utilizes crystal is carried out to the method for test fast.
According to a first aspect of the invention, propose a kind of method of utilizing X-ray diffraction to test crystal, described crystal comprises single crystalline substrate, at least one layer of lattice mismatch material of growing in single crystalline substrate, said method comprising the steps of:
While a) testing for the crystal prototype a plurality of of the same race of same batch production, first sample is carried out to reciprocal space figure RSM scanning, the RSM obtaining according to scanning figure, the movement velocity between calculating ω axle and 2 θ axles is than 1: n;
B), for all the other each samples, adopt ω axle and 2 θ axles with 1: the speed of n scans than the mode of interlock, according to the scanning curve obtaining, calculates the interplanar distance of described at least one layer of lattice mismatch material.
According to one embodiment of present invention, described step a) in, in RSM figure, according to the angle ratio of ω axle and 2 θ axle actual rotation, adopt following formula to calculate movement velocity between ω axle and 2 θ axles than 1: n:
Δω＝Δω1+Δω2
Δ2θ＝2*Δω2
n＝Δ2θ/Δω
Wherein Δ ω is the variation of ω axle actual rotation angle, and Δ 2 θ are variations of 2 θ axle actual rotation angles, and Δ ω 1 is the angle between the crystal face of lattice mismatch material and the corresponding crystal face of substrate, and Δ ω 2 is variations of Bragg angle.
According to one embodiment of present invention, at described step b) in, for each sample, the horizontal ordinate of the scanning curve obtaining is multiplied by n/2, through converting, obtain ω-2 θ curve, according to the diffraction peak of each layer of lattice mismatch material in the θ curve of ω-2 and the peak-to-peak spacing of substrate diffraction, by the Bragg angle of substrate, calculated the Bragg angle of each layer of lattice mismatch material, thereby by bragg's formula, calculated the interplanar distance of each layer of lattice mismatch material.
According to one embodiment of present invention, first to the plane of symmetry implementation step of sample a) and step b), obtain the interplanar distance of the plane of symmetry of each layer of lattice mismatch material; Then to asymmetric implementation step of sample a) and step b), obtain the interplanar distance of asymmetric of each layer of lattice mismatch material, finally, according to the interplanar distance of the plane of symmetry of each layer of lattice mismatch material and asymmetric 's interplanar distance, calculate the grating constant of the vertical and horizontal direction of each layer of lattice mismatch material.
According to one embodiment of present invention, described at least one layer of lattice mismatch material comprises multilayer lattice mismatch material, and the grating constant of described multilayer lattice mismatch material gradually changes with respect to the grating constant of single crystalline substrate.
According to one embodiment of present invention, described crystal is also included in the complete strain gauge material of at least one deck of growing on last layer of lattice mismatch material in described at least one layer of lattice mismatch material, and described method is further comprising the steps of:
C) for each sample, according at step b) in the position of diffraction peak of last layer of lattice mismatch material in the scanning curve that obtains, ω axle is moved to the position of the diffraction peak of corresponding last layer of lattice mismatch material, adopt ω axle and 2 θ axles to scan in the mode of the speed ratio interlock of 1: 2, according to the diffraction peak of each layer of complete strain gauge material in the ω-2 θ scanning curve obtaining and the peak-to-peak spacing of diffraction of described last layer of lattice mismatch material, by the Bragg angle of last layer of lattice mismatch material, calculated the Bragg angle of each layer of complete strain gauge material, thereby by bragg's formula, calculated the interplanar distance of each layer of complete strain gauge material.
A first aspect of the present invention has the following advantages:
For the identical sample of growth parameter(s) with batch production, only need to carry out meticulous RSM scanning to first sample, for remaining sample, do not need to carry out time-consuming RSM scanning, but according to the RSM figure of first sample, the movement velocity between acquisition ω axle and 2 θ axles is than 1: n, adopt ω axle and 2 θ axles with 1: the speed of n is carried out ω-2 θ scanning than the mode of interlock, only need run-down ω-2 θ curve, can measure the interplanar distance of lattice mismatch material, improved subsequent sample test speed.
According to a second aspect of the invention, propose a kind of method of utilizing X-ray diffraction to test single crystal, described crystal comprises single crystalline substrate, at least one layer of lattice mismatch material of growing in single crystalline substrate, said method comprising the steps of:
A) crystal prototype is carried out to rough reciprocal space figure RSM scanning, the RSM obtaining according to scanning figure, the movement velocity between calculating ω axle and 2 θ axles is than 1: n;
B), to same sample, adopt ω axle and 2 θ axles with 1: the speed of n scans than the mode of interlock, according to the scanning curve obtaining, calculates the interplanar distance of described at least one layer of lattice mismatch material.
According to one embodiment of present invention, step a) in, crystal prototype is carried out to the step-length that rough reciprocal space figure RSM scanning adopts 100-300 second of arc.Preferably adopt the step-length of 150-250 second of arc.
According to one embodiment of present invention, described step a) in, in RSM figure, according to the angle ratio of ω axle and 2 θ axle actual rotation, adopt following formula to calculate movement velocity between ω axle and 2 θ axles than 1: n:
Δω＝Δω1+Δω2
Δ2θ＝2*Δω2
n＝Δ2θ/Δω
Wherein Δ ω is the variation of ω axle actual rotation angle, and Δ 2 θ are variations of 2 θ axle actual rotation angles, and Δ ω 1 is the crystal face of lattice mismatch material and the angle between substrate crystal face, and Δ ω 2 is variations of Bragg angle.
According to one embodiment of present invention, at described step b) in, the horizontal ordinate of the scanning curve obtaining is multiplied by n/2, through converting, obtain ω-2 θ curve, according to the diffraction peak of each layer of lattice mismatch material in the θ curve of ω-2 and the peak-to-peak spacing of substrate diffraction, by the Bragg angle of substrate, calculated the Bragg angle of each layer of lattice mismatch material, thereby by bragg's formula, calculated the interplanar distance of each layer of lattice mismatch material.
A second aspect of the present invention has the following advantages:
For single sample, adopt large step-length to carry out rough RSM scanning, obtain RSM figure, the RSM figure obtaining according to coarse scan, movement velocity between acquisition ω axle and 2 θ axles is than 1: n, then adopt ω axle and 2 θ axles with 1: the speed of n is carried out θ scanning in ω-2 than the mode of interlock to same sample, according to the ω-2 θ curve obtaining, measures the interplanar distance of lattice mismatch material.Owing to adopting large step-length to carry out rough RSM scanning, then in conjunction with ω-2 θ scanning, compare with simple employing RSM scanning, improved equally sample test speed.
Accompanying drawing explanation
Fig. 1 is the structural drawing of sample according to an embodiment of the invention;
Fig. 2 is the RSM figure of first sample;
Fig. 3 be ω axle and 2 θ axles with 1: the movement velocity of n is than scanning the scanning curve obtaining;
Fig. 4 is the ω-2 θ curve through converting and obtaining by Fig. 3; And
Fig. 5 is that the 10th layer material of take in Fig. 1 is benchmark, and ω axle and 2 θ axles scan with the velocity ratio of 1: 2 ω-2 θ the curve obtaining.
Embodiment
Below in conjunction with drawings and Examples, to of the present invention, be described in detail.Note, the description of the drawings and specific embodiments is just in order to understand better the present invention, and the present invention is not limited to described embodiment.
Embodiment 1
Embodiment 1 is for the test of a plurality of samples of the same race with batch production.Each sample grown parameter approaches, and structure is identical.
Fig. 1 shows according to the structural drawing of the sample of an exemplary embodiment.Transition bed 2-9, the large mismatch material (differing larger with substrate lattice constant) 10 of growth on transition bed 9 and the complete strain gauge material 11 of two-layer lattice and 12 of growth on large mismatch material 10 that described sample comprises single crystalline substrate 1, in single crystalline substrate 1, grows successively.
Single crystalline substrate 1 is 4 cun of GaAs single-chips, crystal face (100) monotectic face (111) direction 7 degree, and gulde edge is crystal face
on substrate 1, utilize the modes such as MOCVD (metallorganics chemical vapor deposition method) the 8 layers of InGaAlAs transition bed 2-9 that grow.The 10th layer of large mismatch material of growing on transition bed 2-9 is InGaAs.The grating constant of transition bed 2-9 is different from the grating constant of substrate, and the grating constant of transition bed 2-9 increases to the grating constant that approaches the 10th layer of large mismatch material gradually.Transition bed 2-9 and the 10th layer of large mismatch material can be referred to as lattice mismatch material.In the material 11 and 12 of the complete strain of two-layer lattice of growing on InGaAs, the grating constant of layer of material (the 12nd layer) is greater than InGaAs, and the grating constant of another layer of (11th layer) material is less than InGaAs.
The D1 that the XRD equipment that the present invention uses is Jordan Valley company.
The plane of symmetry (004) of sample of take is below example explanation test process:
1. first to first sample, utilize XRD to carry out RSM scanning, the RSM figure obtaining according to scanning, the movement velocity between calculating ω axle and 2 θ axles is than 1: n.Process is as follows:
1) X ray is from gulde edge
incident, the Bragg angle of the plane of symmetry of gallium arsenide substrate (004) crystal face is 33.025 degree, add that (004) crystal face of substrate is with respect to 7 degree of sample surfaces inclination, ω=39.7567 degree after fine setting, 2 θ=66.08851 degree, phi axle (turning axle of sample disc), chi axle (inclination angle, front and back of reflection sample disc) also need to do certain adjustment, and the light intensity that now detector is surveyed is the strongest.In this position, the plane of symmetry of sample (004) crystal face is carried out to reciprocal space figure (RSM) scanning, obtain the RSM figure of Fig. 2.
RSM sweep parameter arranges:
ω rel coordinate axis :-5200～500 second of arcs (arcsecond);
ω-2 θ coordinate axis :-4000～500 second of arcs.
Two coordinate axis step-lengths are all 20 second of arcs, gate time 0.6 second.
RSM scanning about 13 hours consuming time altogether.
2) RSM by Fig. 2 schemes, and according to the angle ratio of ω axle and 2 θ axle actual rotation, can calculate the actual motion velocity ratio 1 of diaxon: n by following formula.
Δω＝Δω1+Δω2 (1)
Δ2θ＝2*Δω2 (2)
n＝Δ2θ/Δω (3)
Wherein, Δ ω is the angle of ω axle actual rotation, the angle Δ ω 1 between (004) crystal face of each layer of lattice mismatch material and the corresponding crystal face of substrate and the changes delta ω 2 of Bragg angle, consists of.Δ 2 θ are angles of 2 θ axle actual rotation.As shown in the RSM figure of Fig. 2, Δ ω 1 is presented as the variation of horizontal ordinate in RSM figure, and Δ ω 2 is presented as the variation of ordinate in RSM figure.
The 10th layer of large mismatch material InGaAs of take is example, the professional drawing software providing by XRD equipment manufacturer can read out Δ ω 1=-4751.38 second of arc corresponding to diffraction center of the 10th layer of large mismatch material InGaAs, Δ ω 2=-3230.66 second of arc, the above-mentioned formula of substitution (1)-(3), obtain:
Δ ω=Δ ω 1+ Δ ω 2=7982.04 second of arc;
Δ 2 θ=2* Δ ω 2=6461.32 second of arc;
n＝Δ2θ/Δω＝0.8095。
Thereby obtain the velocity ratio 1 of ω axle and 2 θ axle actual rotation: n is 1: 0.8095.
Here, also can select any one deck in 2-9 layer transition bed to read Δ ω 1 and Δ ω 2, and calculate accordingly the velocity ratio 1 of ω axle and 2 θ axle actual rotation: n.
2,, for all the other each samples, adopt ω axle and 2 θ axles with 1: the speed of n scans than the mode of interlock, according to the scanning curve obtaining, calculates the interplanar distance of (004) crystal face of described at least one layer of lattice mismatch material.Detailed process is as follows:
1) each sample of measuring for needs, optimizes and revises substrate diffraction peak intensity by ω, 2 θ and other axles and reaches the strongest position.Then, ω axle and 2 θ axles are scanned with the velocity ratio of 1: 0.8095, obtain the scanning curve of Fig. 3.Sweep interval-9200～800 second of arc, step-length is 10 second of arcs, 16 minutes consuming time.Note, the scanning here and traditional ω axle and 2 θ are similar, the curve obtaining also with traditional ω-2 θ class of a curve seemingly, uniquely different be, according to the present invention, the velocity of rotation of ω axle and 2 θ axles is 1: 2 than not, but according to ω axle and the velocity ratio 1 of 2 θ axle actual rotation: the n of RSM figure measuring and calculating.
2) horizontal ordinate of the scanning curve of Fig. 3 is multiplied by n/2, through conversion, obtains the ω-2 θ curve of Fig. 4, according to the ω-2 θ curve of Fig. 4, can calculate the interplanar distance of each layer of lattice mismatch material.
Its principle is as follows:
Because Δ ω 2 reality have reflected the difference of the Bragg angle θ between InGaAs layer and substrate, and difference DELTA ω=Δ ω 1+ Δ ω 2 of X ray incident angle ω between InGaAs layer and substrate, because Δ ω 2 and Δ 2 θ meet the kinematic relation of 1: 2, and Δ ω and Δ 2 θ meet 1: the kinematic relation of n, the relationship delta ω 2/ Δ ω=n/2 of known Bragg angle and incident angle.In Fig. 3, actual measurement is the variation of incident angle ω, so the horizontal ordinate of Fig. 3 is multiplied by n/2 (0.4048), obtains Fig. 4, and now the horizontal ordinate in Fig. 4 is exactly the difference of the Bragg angle of layers of material and substrate.According to each peak separation in Fig. 4, with bragg's formula 2dsin θ=λ, can calculate vertical direction interplanar distance, wherein d is interplanar distance, and θ is Bragg angle, and λ is x beam wavelength.Because the Bragg angle of substrate is known, thus according to the spacing at each peak and substrate peak, can extrapolate the Bragg angle at each peak, thus the interplanar distance of calculating.
The 10th layer of large mismatch material InGaAs of take is example, with reference to Fig. 4, and being calculated as follows of its interplanar distance:
Known: Bragg angle θ=33.025 degree of GaAs (004) face,
Δ θ=3234 second of arc between InGaAs layer and GaAs substrate i.e. 0.8983 degree
Bragg angle θ=33.025-0.8983=32.1267 degree of InGaAs
X ray wavelength X is
(dust)
In the same way, can calculate the interplanar distance of 2-9 layer transition bed.
3. according to this embodiment, because sample is also included in the above material (grating constant of its horizontal direction is the same with InGaAs) 11 and 12 of the complete strain of two-layer lattice of growth of InGaAs, (004) crystal face of the crystal face of this two layers of material (004) crystal face and InGaAs is parallel, and degree of tilt is identical.Therefore, for this two layers of material, need to adopt the ω-2 θ scanning of traditional velocity ratio of 1: 2, obtain ω-2 θ curve, then calculate interplanar distance according to the ω-2 θ scanning curve obtaining.
Detailed process is as follows:
ω axle is moved to the corresponding position of InGaAs diffraction peak in Fig. 3, that is:
ω=39.7567-7990/3600=37.5373 degree
Optimize 2 θ to InGaAs diffraction peaks to the strongest.With ω and 2 θ, with the length velocity relation of 1: 2, scan to obtain Fig. 5.Sweep interval is-800～800 second of arcs, step-length 2 second of arcs, 10 minutes consuming time.
Again according to 11th layer in the ω-2 θ scanning curve of Fig. 5 and the diffraction peak of the 12nd layer and the peak-to-peak spacing of diffraction of the 10th layer of large mismatch material InGaAs, by the Bragg angle of the 10th layer of large mismatch material InGaAs, calculated the Bragg angle of 11th layer and the 12nd layer of complete strain gauge material, thereby by bragg's formula, calculated the interplanar distance of 11th layer and the 12nd layer of complete strain gauge material.
The computation process of the interplanar distance of 11th layer and the 12nd layer of complete strain gauge material is as follows:
The Bragg angle that has calculated InGaAs in step 2 is 32.1267 degree.
The 12nd layer
11th layer
In above sample test process, RSM tests 13 hours consuming time.ω and 2 θ were with 16 minutes consuming time of scanning in 1: 0.8095, and ω and 2 θ scan 10 minutes consuming time with 1: 2 relation, added that the time of adjusting the strong position of ω and 2 θ to InGaAs diffraction peaks midway needs 10 minutes, needed altogether about 40 minutes.For each sample except first sample, required time only needs 40/ (13*60)=0.0513, only need 5.13% of RSM sweep time, greatly shortened the test duration, speed has improved approximately 20 times, 20 similar samples can be in same time, measured, and the precision substantially suitable with RSM scanning can be reached.
The plane of symmetry (004) of take has above illustrated test process as example.Also can as (002), (006) etc., adopt as upper type for other plane of symmetry, determine the kinematic relation of ω-2 θ, thereby scan the information of testing sample, can calculate equally the interplanar distance of the plane of symmetry.
Then, for asymmetric (115), (224) etc., also can adopt as upper type, determine the kinematic relation of ω-2 θ, thereby scan the information of testing sample, calculate the spacing of lattice of asymmetric.
The plane of symmetry only need to respectively be surveyed a face and just can calculate vertical and grating constant horizontal direction with asymmetric.As the plane of symmetry can be selected in (004), (006), can select in (115), (224) for asymmetric.Also can otherwise as measure two asymmetric and carry out counting lattice constant.
After calculating the plane of symmetry and asymmetric or two asymmetric 's interplanar distance, can be according to the plane of symmetry and asymmetric 's interplanar distance, calculate the grating constant of vertical and horizontal both direction, in conjunction with relational expressions such as Poisson's coefficient, relaxivity, can calculate the component of different layers material.
Embodiment 2
Embodiment 2 is similar with the sample structure of embodiment 1.Embodiment 2 is basic identical with the test mode of embodiment 1, and difference is, it is to adopt rough RSM scanning with 1 for same sample: ω-2 θ of n scans the mode combining tests sample, is applied to the test one by one of the sample that growth parameter(s) is different.Concrete test process is as follows:
1. for sample, first with large step-length (150 second of arc) coarse scan, go out the RSM figure of the planes of symmetry such as (004), sweep interval is identical with embodiment 1, i.e. ω _ rel coordinate axis :-5200～500 second of arcs, ω-2 θ coordinate axis :-4000～500 second of arcs.(004) plane of symmetry scans about 25 minutes consuming time.The RSM obtaining according to coarse scan schemes, and calculates the kinematic relation 1 of ω and 2 θ: n in the mode identical with embodiment 1.
According to this embodiment, the step-length scope of coarse scan can be chosen in the scope of 100～300 second of arcs, preferably in the scope of 150～250 second of arcs.Object is that RSM is controlled at about 30 minutes sweep time, still can scan the diffraction peak of sample simultaneously.If step-length is too little, although scanning accuracy improves, sweep time is long, compares and there is no speed advantage with simple employing RSM scanning.On the other hand, if step-length is too large, diffraction center may just can not locate out exactly, thereby can not obtain available RSM figure.
Illustrate, in RSM figure according to an embodiment of the invention, the width of large mismatch material InGaAs diffraction center on ω rel coordinate axis and ω-2 θ change in coordinate axis direction is all in 700～800 second of arc left and right, so the step-length of both direction is preferably less than diffraction center width half, so just can be by diffraction centre scan out.
For other materials, if its diffraction center width is smaller, or in RSM figure, its diffraction center and substrate approach, and can according to circumstances reduce step-length, and it is shorter sweep time that object is controlled RSM exactly, can access again available RSM figure simultaneously.Therefore,, for the sample of different materials, those skilled in the art can suitably select the step-length of rough RSM scanning as required.
2. according to the RSM figure of coarse scan, calculating the kinematic relation 1 of ω and 2 θ: after n, for same sample, adopt ω axle and 2 θ axles with 1: the speed of n scans than the mode of interlock, according to the scanning curve obtaining, calculate interplanar distance.Its process is identical with embodiment 1.
If there is the material of complete strain, its test mode is also identical with embodiment 1, be about to the corresponding position of diffraction peak that ω axle moves to the material layer of this complete strain gauge material of growth, make ω axle and 2 θ axles obtain ω-2 θ curve with the length velocity relation scanning of 1: 2, according to the ω-2 θ curve obtaining, calculate the interplanar distance of complete strain gauge material.
Equally, by the plane of symmetry and asymmetric are implemented respectively to above-mentioned steps 1 and 2, can calculate the plane of symmetry and asymmetric 's interplanar distance, and according to the plane of symmetry and asymmetric 's spacing of lattice, calculate the grating constant of vertical and horizontal both direction, in conjunction with relational expressions such as Poisson's coefficient, relaxivity, can calculate the component of different layers material.
According to embodiment 2, owing to adopting large step-length to carry out rough RSM scanning, then in conjunction with ω-2 θ scanning, compare with simple employing RSM scanning, improved equally sample test speed.
With object lesson, principle of the present invention and implementation process have been described above, but the sample that method of testing of the present invention is not limited to describe in embodiment, but go for any at least test of the sample of one deck lattice mismatch material of growing in single crystalline substrate.
According to instruction of the present invention, those skilled in the art it is contemplated that other distortion embodiment, and only otherwise depart from essence of the present invention, they all fall into protection scope of the present invention.Protection scope of the present invention is limited by its claims.
Claims (8)
1. a method of utilizing X-ray diffraction to test crystal, described crystal comprises single crystalline substrate, at least one layer of lattice mismatch material of growing in single crystalline substrate, said method comprising the steps of:
While a) testing for the crystal prototype a plurality of of the same race of same batch production, first sample is carried out to reciprocal space figure RSM scanning, in the RSM figure obtaining in scanning, according to the angle ratio of ω axle and 2 θ axle actual rotation, adopt following formula to calculate movement velocity between ω axle and 2 θ axles than 1:n:
Δω=Δω1+Δω2
Δ2θ=2*Δω2
n=Δ2θ/Δω
Wherein Δ ω is the variation of ω axle actual rotation angle, and Δ 2 θ are variations of 2 θ axle actual rotation angles, and Δ ω 1 is the angle between the crystal face of lattice mismatch material and the corresponding crystal face of substrate, and Δ ω 2 is variations of Bragg angle;
B) for all the other each samples, adopt ω axle and the speed of 2 θ axles with 1:n to scan than the mode of interlock, according to the scanning curve obtaining, calculate the interplanar distance of described at least one layer of lattice mismatch material.
2. the method for utilizing X-ray diffraction to test crystal according to claim 1, wherein, at described step b) in, for each sample, the horizontal ordinate of the scanning curve obtaining is multiplied by n/2, through converting, obtain ω-2 θ curve, according to the diffraction peak of each layer of lattice mismatch material in the θ curve of ω-2 and the peak-to-peak spacing of substrate diffraction, by the Bragg angle of substrate, calculated the Bragg angle of each layer of lattice mismatch material, thereby by bragg's formula, calculated the interplanar distance of each layer of lattice mismatch material.
3. the method for utilizing X-ray diffraction to test crystal according to claim 2, wherein, first to the plane of symmetry implementation step of sample a) and step b), obtain the interplanar distance of the plane of symmetry of each layer of lattice mismatch material; Then to asymmetric implementation step of sample a) and step b), obtain the interplanar distance of asymmetric of each layer of lattice mismatch material, finally, according to the interplanar distance of the plane of symmetry of each layer of lattice mismatch material and asymmetric 's interplanar distance, calculate the grating constant of the vertical and horizontal direction of each layer of lattice mismatch material.
4. the method for utilizing X-ray diffraction to test crystal according to claim 3, wherein, described at least one layer of lattice mismatch material comprises multilayer lattice mismatch material, and the grating constant of described multilayer lattice mismatch material gradually changes with respect to the grating constant of single crystalline substrate.
5. according to the method for utilizing X-ray diffraction to test crystal described in any one in claim 1-4, wherein, described crystal is also included in the complete strain gauge material of at least one deck of growing on last layer of lattice mismatch material in described at least one layer of lattice mismatch material, and described method is further comprising the steps of:
) for each sample, according at step b) in the position of diffraction peak of last layer of lattice mismatch material in the scanning curve that obtains, ω axle is moved to the position of the diffraction peak of corresponding last layer of lattice mismatch material, adopt ω axle and the speed of 2 θ axles with 1:2 to scan than the mode of interlock, according to the diffraction peak of each layer of complete strain gauge material in the ω-2 θ scanning curve obtaining and the peak-to-peak spacing of diffraction of described last layer of lattice mismatch material, by the Bragg angle of last layer of lattice mismatch material, calculated the Bragg angle of each layer of complete strain gauge material, thereby by bragg's formula, calculated the interplanar distance of each layer of complete strain gauge material.
6. a method of utilizing X-ray diffraction to test crystal, described crystal comprises single crystalline substrate, at least one layer of lattice mismatch material of growing in single crystalline substrate, said method comprising the steps of:
A) crystal prototype is carried out to rough reciprocal space figure RSM scanning, in the RSM figure obtaining in scanning, according to the angle ratio of ω axle and 2 θ axle actual rotation, adopts following formula to calculate movement velocity between ω axle and 2 θ axles than 1:n:
Δω=Δω1+Δω2
Δ2θ=2*Δω2
n=Δ2θ/Δω
Wherein Δ ω is the variation of ω axle actual rotation angle, and Δ 2 θ are variations of 2 θ axle actual rotation angles, and Δ ω 1 is the crystal face of lattice mismatch material and the angle between substrate crystal face, and Δ ω 2 is variations of Bragg angle;
B) to same sample, adopt ω axle and the speed of 2 θ axles with 1:n to scan than the mode of interlock, according to the scanning curve obtaining, calculate the interplanar distance of described at least one layer of lattice mismatch material.
7. the method for utilizing X-ray diffraction to test crystal according to claim 6, wherein, step a) in, crystal prototype is carried out to the step-length that rough reciprocal space figure RSM scanning adopts 100～300 second of arcs.
8. the method for utilizing X-ray diffraction to test crystal according to claim 6, wherein, at described step b) in, the horizontal ordinate of the scanning curve obtaining is multiplied by n/2, through converting, obtain ω-2 θ curve, according to the diffraction peak of each layer of lattice mismatch material in the θ curve of ω-2 and the peak-to-peak spacing of substrate diffraction, by the Bragg angle of substrate, calculated the Bragg angle of each layer of lattice mismatch material, thereby by bragg's formula, calculated the interplanar distance of each layer of lattice mismatch material.
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