CN102868008A - High voltage-resistant microwave phase shift assembly for ferroelectric phase shifter - Google Patents
High voltage-resistant microwave phase shift assembly for ferroelectric phase shifter Download PDFInfo
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- CN102868008A CN102868008A CN2012103666797A CN201210366679A CN102868008A CN 102868008 A CN102868008 A CN 102868008A CN 2012103666797 A CN2012103666797 A CN 2012103666797A CN 201210366679 A CN201210366679 A CN 201210366679A CN 102868008 A CN102868008 A CN 102868008A
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Abstract
The invention relates to a high voltage-resistant microwave phase shift assembly for a ferroelectric phase shifter. The high voltage-resistant microwave phase shift assembly comprises a rectangular upper thin plate, a rectangular metal foil and a rectangular lower thin plate, wherein the upper thin plate and the lower thin plate are made of ferroelectric materials, and the upper thin plate, the metal foil and the lower thin plate are stuck together for forming the high voltage-resistant assembly; a high-voltage leading wire extending to the outside is arranged on one side of the metal foil; metal film layers are respectively arranged on the inner side surfaces of the upper thin plate and the lower thin plate, the upper metal film layer, the metal foil and the lower metal film layer constitute a central metal electrode; insulating thin films are respectively arranged on the two side surfaces of the high voltage-resistant microwave phase shift assembly in the width direction, and insulating colloids are respectively arranged on the two side surfaces of the high voltage-resistant microwave phase shift assembly in the length direction; and silicon sulfide rubber is filled in a gap between the two sides of the upper thin plate and the lower thin plate, which is vertical to microwave transmission direction. The working bias voltage of the ferroelectric phase shifter using the high voltage-resistant microwave phase shift assembly disclosed by the invention can be increased from 2000V to 12000V, the application requirements of the ferroelectric phase shifter can be met, and the high-voltage arc of the ferroelectric phase shifter can be effectively prevented.
Description
Technical field
The invention belongs to the microwave device technical field, be specifically related to the high pressure resistant microwave phase shift of a kind of ferroelectric phase shifter sub-assembly.
Background technology
In ferroelectric phase shifter, utilize ferroelectric material ((BaSr) TiO3(is abbreviated as BST)) characteristic that changes with extra electric field of dielectric constant, realize in the microwave system function by voltage control transmission phase place.The characteristics such as the applying frequency of ferroelectric phase shifter is high, and higher sweep speed is arranged, and it is little, lightweight to have a volume, and cost is low are in low-cost phase array
RadarIn have very large application advantage.Abroad carried out the correlation technique research of ferroelectric phase shifter to the beginning of this century nineties in last century, but owing to great number of issues such as the ferroelectric phase shifter operating bias voltage of developing are high, Electro Magnetic Compatibility is poor, can't reach the requirement that engineering is used.
Ferroelectric phase shifter needs Dc bias to be added to about 7000V-12000V in order to realize 360 ° of phase shifts usually.And air breakdown field intensity theoretical value is 3000V/mm, the about 0.8mm of distance between the positive and negative electrode in the ferroelectric phase shifter, so voltage is added to 2400V air breakdown will occur in theory, cause phase shifter can't apply the direct voltage of needs, simultaneously, because the ferroelectric material thin plate is in the microwave transmission system, the material of introducing other may cause device mismatch, Insertion Loss to increase, and ferroelectric material is shaped as plate-shaped, length and width and Thickness Ratio are very large, gauge is very little, and traditional insulating material is wrapped up in the high pressure resistant processing methods such as envelope, embedding and inapplicable.
Summary of the invention
The problem that exists in order to solve above-mentioned ferroelectric phase shifter the invention provides a kind of high pressure resistant microwave phase shift sub-assembly for ferroelectric phase shifter.
The high pressure resistant microwave phase shift sub-assembly that is used for ferroelectric phase shifter comprises the upper thin sheet of rectangle, the metal forming of rectangle and the lower thin sheet of rectangle, the material of described upper thin sheet and lower thin sheet is ferroelectric material, and the three is pasted together and forms high pressure resistant microwave phase shift sub-assembly; One side of described metal forming is provided with outward extending high-voltage connection; The medial surface of the upper thin sheet corresponding with metal forming is provided with upper metallic diaphragm, and the medial surface of the lower thin sheet corresponding with metal forming is provided with lower metallic diaphragm, and upper metallic diaphragm, metal forming and lower metallic diaphragm consist of central metal electrode; The Width two sides of high pressure resistant microwave phase shift sub-assembly are respectively equipped with insulation film, and the length direction two sides of high pressure resistant microwave phase shift sub-assembly are respectively equipped with the insulation colloid; Be filled with sulphurated siliastic at upper thin sheet and place, the slit between the lower thin sheet both sides perpendicular to the microwave transmission direction.
The thickness of described upper thin sheet and lower thin sheet is 0.8～1.0 ㎜; Four angles of described metal forming are arc chord angle, and the distance between the distance between the edge of metal forming and the edge of upper thin sheet or the edge of lower thin sheet is 1.0～2.0 ㎜; Perpendicular to the upper thin sheet of microwave transmission direction and the slit between the lower thin sheet both sides less than 0.15mm; Described sulphurated siliastic is one-component DG404 room temperature vulcanized silicone rubber, and the material of described insulation film is 704 silicon rubber, and thickness is less than 0.2mm; The material of described insulation colloid is 704 silicon rubber.
The high-voltage connection of described metal forming is parallel with the length direction of high pressure resistant microwave phase shift sub-assembly.
Useful technique effect of the present invention embodies in the following areas:
1, splash-proofing sputtering metal rete on the ferroelectric material thin plate, and design suitable metallic diaphragm figure, make metallic diaphragm and ferroelectric material thin plate edge at regular intervals, to prolong the distance between the ferroelectric phase shifter positive and negative electrode, the change high direct voltage is taken off power path and is increased and takes off electrical distance, the high pressure resistant microwave phase shift sub-assembly of design can rise to 12000V from 2000V with ferroelectric phase shifter operating bias voltage, reach the application requirements of ferroelectric phase shifter, prevent that effectively biasing high voltage arc phenomenon from appearring in ferroelectric phase shifter;
2, select in perpendicular to the slit between the both sides of microwave transmission direction suitable one-component silicon rubber to fill with suitable thickness at two ferroelectric material thin plates, and add insulation film in both side surface, with electrode and air insulated, two ferroelectric material thin plates are parallel to the two ends of microwave transmission direction owing to be in the most weak position of microwave field density distribution, can use silicon rubber to fill in a large number.The impact on the phase shifter microwave property when improving the high pressure resistant value of ferroelectric phase shifter of high pressure resistant microwave phase shift sub-assembly is minimum, and the DG404 that selects and 704 silicon rubber dielectric constants are moderate, and the dielectric loss angle tangent value is 6 * 10
-3Magnitude, the high-frequency dielectric loss is little, and it is very little in the stronger part use amount of phase shifter microwave field density among the present invention, and is therefore less to the disturbance of microwave transmission system, little to the ferroelectric phase shifter performance impact, adopt the standing-wave ratio of phase shifter after the design of the present invention almost not change;
3, high pressure resistant microwave phase shift sub-assembly ageing resistace is strong, and reliability is high.Select the insulating barrier that single-component room temperature vulcanized silicon rubber DG404 and 704 silicon rubber solidify to have good electrical insulation properties and chemical stability; Its thermal endurance and heat-resisting cyclicity are good simultaneously, and have good ageing resistace; It is little that insulating barrier solidifies post-shrinkage ratio, can hardening, shrink or break, and the reliability of high pressure resistant microwave phase shift sub-assembly is high; Guaranteed the job stability of ferroelectric phase shifter.
Description of drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is the explosive view of Fig. 1.
Fig. 3 is figure
1Vertical view.
Fig. 4 is figure
1The A-A cutaway view.
Fig. 5 is figure
1The B-B cutaway view.
Fig. 6 is figure
5Partial enlarged drawing.
Fig. 7 is the expanded view of upper thin sheet, metal forming and lower thin sheet.
Sequence number among the upper figure: upper thin sheet 1, metal forming 2, sulphurated siliastic 3, insulation film 4, insulation colloid 5, upper metallic diaphragm 6, lower thin sheet 7, lower metallic diaphragm 8.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described by embodiment.
Embodiment:
Referring to Fig. 1 and Fig. 2, the high pressure resistant microwave phase shift sub-assembly that is used for ferroelectric phase shifter comprises the upper thin sheet 1 of rectangle, the metal forming 2 of rectangle and the lower thin sheet 7 of rectangle, the material of upper thin sheet 1 and lower thin sheet 7 is ferroelectric material, and the three is pasted together and forms high pressure resistant microwave phase shift sub-assembly.One side of metal forming 2 is provided with outward extending high-voltage connection, adds the positive pole of bias direct current voltage as phase shifter, and the high-voltage connection of metal forming 2 is parallel with the length direction of high pressure resistant microwave phase shift sub-assembly, sees Fig. 3.Sputter has upper metallic diaphragm 6 on the medial surface of the upper thin sheet 1 corresponding with metal forming, sputter has lower metallic diaphragm 8 on the medial surface of the lower thin sheet 7 corresponding with metal forming 2, the shape of metal forming 2, size and the shape of upper metallic diaphragm 6, lower metallic diaphragm 8 are with big or small similar, upper metallic diaphragm 6, metal forming 2 and lower metallic diaphragm 8 consist of central metal electrode, see Fig. 7.The Width two sides of high pressure resistant microwave phase shift sub-assembly are respectively equipped with the insulation film 4 of 704 silastic materials, see Fig. 4, the length direction two sides of high pressure resistant microwave phase shift sub-assembly are respectively equipped with the insulation colloid 5 of 704 silastic materials, see Fig. 5, are used for secluding air; Be filled with one-component DG404 room temperature vulcanized silicone rubber 3 at upper thin sheet 1 and place, the slit between lower thin sheet 7 both sides perpendicular to the microwave transmission direction, see Fig. 6.
The thickness of upper thin sheet 1 and lower thin sheet 7 is 0.8～1.0 ㎜; Four angles of metal forming 2 are arc chord angle, and the distance between the distance between the edge of the edge of metal forming 2 and upper thin sheet 1 or the edge of lower thin sheet 7 is 1.0～2.0 ㎜; Perpendicular to the upper thin sheet 1 of microwave transmission direction and the slit between lower thin sheet 7 both sides less than 0.15mm; Insulation film 4 thickness of 704 silastic materials are no more than 0.2mm.
Claims (3)
1. the high pressure resistant microwave phase shift sub-assembly that is used for ferroelectric phase shifter, it is characterized in that: comprise the upper thin sheet of rectangle, the metal forming of rectangle and the lower thin sheet of rectangle, the material of described upper thin sheet and lower thin sheet is ferroelectric material, and the three is pasted together and forms high pressure resistant microwave phase shift sub-assembly; One side of described metal forming is provided with outward extending high-voltage connection; The medial surface of the upper thin sheet corresponding with metal forming is provided with upper metallic diaphragm, and the medial surface of the lower thin sheet corresponding with metal forming is provided with lower metallic diaphragm, and upper metallic diaphragm, metal forming and lower metallic diaphragm consist of central metal electrode; The Width two sides of high pressure resistant microwave phase shift sub-assembly are respectively equipped with insulation film, and the length direction two sides of high pressure resistant microwave phase shift sub-assembly are respectively equipped with the insulation colloid; Be filled with sulphurated siliastic at upper thin sheet and place, the slit between the lower thin sheet both sides perpendicular to the microwave transmission direction.
2. the high pressure resistant microwave phase shift sub-assembly for ferroelectric phase shifter according to claim 1, it is characterized in that: the thickness of described upper thin sheet and lower thin sheet is 0.8～1.0 ㎜; Four angles of described metal forming are arc chord angle, and the distance between the distance between the edge of metal forming and the edge of upper thin sheet or the edge of lower thin sheet is 1.0～2.0 ㎜; Perpendicular to the upper thin sheet of microwave transmission direction and the slit between the lower thin sheet both sides less than 0.15mm; Described sulphurated siliastic is one-component DG404 room temperature vulcanized silicone rubber, and the material of described insulation film is 704 silicon rubber, and thickness is less than 0.2mm; The material of described insulation colloid is 704 silicon rubber.
3. the high pressure resistant microwave phase shift sub-assembly for ferroelectric phase shifter according to claim 1, it is characterized in that: the high-voltage connection of described metal forming is parallel with the length direction of high pressure resistant microwave phase shift sub-assembly.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012103666797A CN102868008A (en) | 2012-09-28 | 2012-09-28 | High voltage-resistant microwave phase shift assembly for ferroelectric phase shifter |
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| CN2012103666797A CN102868008A (en) | 2012-09-28 | 2012-09-28 | High voltage-resistant microwave phase shift assembly for ferroelectric phase shifter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105680143A (en) * | 2016-04-11 | 2016-06-15 | 重庆邮电大学 | Ferroelectric material based waveguide T type mixed junction and design method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009136320A1 (en) * | 2008-05-08 | 2009-11-12 | Nxp B.V. | Tunable capacitor |
| CN202352804U (en) * | 2011-12-15 | 2012-07-25 | 中国电子科技集团公司第三十八研究所 | Ferroelectric phase shifter |
| CN202797195U (en) * | 2012-09-28 | 2013-03-13 | 中国电子科技集团公司第三十八研究所 | High voltage resistant microwave phase shifting assembly used for ferroelectric phase shifter |
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- 2012-09-28 CN CN2012103666797A patent/CN102868008A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009136320A1 (en) * | 2008-05-08 | 2009-11-12 | Nxp B.V. | Tunable capacitor |
| CN202352804U (en) * | 2011-12-15 | 2012-07-25 | 中国电子科技集团公司第三十八研究所 | Ferroelectric phase shifter |
| CN202797195U (en) * | 2012-09-28 | 2013-03-13 | 中国电子科技集团公司第三十八研究所 | High voltage resistant microwave phase shifting assembly used for ferroelectric phase shifter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105680143A (en) * | 2016-04-11 | 2016-06-15 | 重庆邮电大学 | Ferroelectric material based waveguide T type mixed junction and design method thereof |
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Application publication date: 20130109 |