CN102865999B - Led光学特性检测方法及检测装置 - Google Patents
Led光学特性检测方法及检测装置 Download PDFInfo
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- CN102865999B CN102865999B CN201110191200.6A CN201110191200A CN102865999B CN 102865999 B CN102865999 B CN 102865999B CN 201110191200 A CN201110191200 A CN 201110191200A CN 102865999 B CN102865999 B CN 102865999B
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- 238000001514 detection method Methods 0.000 title claims abstract description 51
- 230000003287 optical effect Effects 0.000 title claims abstract description 23
- LFEUVBZXUFMACD-UHFFFAOYSA-H lead(2+);trioxido(oxo)-$l^{5}-arsane Chemical compound [Pb+2].[Pb+2].[Pb+2].[O-][As]([O-])([O-])=O.[O-][As]([O-])([O-])=O LFEUVBZXUFMACD-UHFFFAOYSA-H 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 22
- 230000001427 coherent effect Effects 0.000 claims abstract description 7
- 238000003384 imaging method Methods 0.000 claims description 73
- 238000000926 separation method Methods 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000002189 fluorescence spectrum Methods 0.000 claims description 6
- 238000000799 fluorescence microscopy Methods 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000003491 array Methods 0.000 abstract 4
- 238000010586 diagram Methods 0.000 description 18
- 229910002601 GaN Inorganic materials 0.000 description 9
- 238000004020 luminiscence type Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 238000005286 illumination Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000010183 spectrum analysis Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001506 fluorescence spectroscopy Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
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- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
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CN201110191200.6A CN102865999B (zh) | 2011-07-08 | 2011-07-08 | Led光学特性检测方法及检测装置 |
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CN201110191200.6A CN102865999B (zh) | 2011-07-08 | 2011-07-08 | Led光学特性检测方法及检测装置 |
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CN102865999A CN102865999A (zh) | 2013-01-09 |
CN102865999B true CN102865999B (zh) | 2015-03-04 |
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CN201110191200.6A Active CN102865999B (zh) | 2011-07-08 | 2011-07-08 | Led光学特性检测方法及检测装置 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103226009B (zh) * | 2013-03-19 | 2015-06-24 | 陕西科技大学 | 一种自成像结构光投影和相移装置及方法 |
JP6229474B2 (ja) * | 2013-12-13 | 2017-11-15 | 富士通株式会社 | 半導体レーザ装置、光アンプおよび判定方法 |
KR20180047776A (ko) * | 2016-11-01 | 2018-05-10 | 삼성전자주식회사 | 분광 측정 장치 및 분광 측정 장치를 이용한 분광 측정 방법 |
CN107576882A (zh) * | 2017-09-21 | 2018-01-12 | 国家电网公司 | 激光核准装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1391117A (zh) * | 2002-07-26 | 2003-01-15 | 中国科学院上海光学精密机械研究所 | 泰伯效应的分波分束器 |
CN1426570A (zh) * | 2000-03-02 | 2003-06-25 | 物理光学公司 | 利用具有漫射体之光导管的扫描器 |
CN101072996A (zh) * | 2004-12-10 | 2007-11-14 | 皇家飞利浦电子股份有限公司 | 多点检验设备 |
EP2278558A2 (de) * | 2004-07-22 | 2011-01-26 | Giesecke & Devrient GmbH | Vorrichtung und Verfahren zur Prüfung von Wertdokumenten |
CN102099916A (zh) * | 2008-07-25 | 2011-06-15 | 康奈尔大学 | 光场图像传感器、方法及应用 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9906929D0 (en) * | 1999-03-26 | 1999-05-19 | Univ Glasgow | Assay system |
CN1910111A (zh) * | 2003-10-27 | 2007-02-07 | 波科海姆技术公共有限公司 | 具有可变光衰减器的光学组件 |
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2011
- 2011-07-08 CN CN201110191200.6A patent/CN102865999B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1426570A (zh) * | 2000-03-02 | 2003-06-25 | 物理光学公司 | 利用具有漫射体之光导管的扫描器 |
CN1391117A (zh) * | 2002-07-26 | 2003-01-15 | 中国科学院上海光学精密机械研究所 | 泰伯效应的分波分束器 |
EP2278558A2 (de) * | 2004-07-22 | 2011-01-26 | Giesecke & Devrient GmbH | Vorrichtung und Verfahren zur Prüfung von Wertdokumenten |
CN101072996A (zh) * | 2004-12-10 | 2007-11-14 | 皇家飞利浦电子股份有限公司 | 多点检验设备 |
CN102099916A (zh) * | 2008-07-25 | 2011-06-15 | 康奈尔大学 | 光场图像传感器、方法及应用 |
Non-Patent Citations (2)
Title |
---|
Ronchi光栅Talbot效应长焦距测量的准确度极限研究;孙琛等;《光子学报》;20041031;第33卷(第10期);第1214-1217页 * |
光学系统中的光栅衍射自成像现象广义的Talbot效应;廖江红等;《光学学报》;19850430;第5卷(第4期);第331-335页 * |
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