CN102861992B - The processing method of sapphire substrate - Google Patents
The processing method of sapphire substrate Download PDFInfo
- Publication number
- CN102861992B CN102861992B CN201210226284.7A CN201210226284A CN102861992B CN 102861992 B CN102861992 B CN 102861992B CN 201210226284 A CN201210226284 A CN 201210226284A CN 102861992 B CN102861992 B CN 102861992B
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- sapphire substrate
- processing conditions
- preset lines
- sapphire
- segmentation preset
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 134
- 239000010980 sapphire Substances 0.000 title claims abstract description 134
- 239000000758 substrate Substances 0.000 title claims abstract description 123
- 238000003672 processing method Methods 0.000 title abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 44
- 230000011218 segmentation Effects 0.000 claims abstract description 42
- 230000035699 permeability Effects 0.000 claims abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 description 56
- 235000012431 wafers Nutrition 0.000 description 53
- 230000015572 biosynthetic process Effects 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 230000007246 mechanism Effects 0.000 description 10
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical class [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
The processing method of sapphire substrate of the present invention, the pulse laser light relative to sapphire substrate with the wavelength of permeability is irradiated along segmentation preset lines, upgrading layer is formed along segmentation preset lines at process for sapphire-based intralamellar part, the method comprises: processing conditions setting procedure, corresponding to property settings at least 2 kinds of processing conditions of sapphire substrate; Criterion setting procedure, for differentiating the sapphire substrate setting at least 2 kinds of processing conditions; Processing conditions determining step, differentiates sapphire substrate according to the criterion set by criterion setting procedure, determines 1 processing conditions at least 2 kinds of processing conditions set from this processing conditions setting procedure of differentiated sapphire substrate; And upgrading layer forming step, according to the processing conditions determined in processing conditions determining step, the focal point of laser beam is positioned process for sapphire-based intralamellar part, irradiates along segmentation preset lines, form upgrading layer along segmentation preset lines at process for sapphire-based intralamellar part.
Description
Technical field
The present invention relates to the segmentation preset lines set along the sapphire substrate at the substrate being used as optical device wafer etc. and irradiate laser beam, form the processing method of the sapphire substrate of upgrading layer along segmentation preset lines at process for sapphire-based intralamellar part.
Background technology
In optical device manufacturing step, forms the optical device such as light emitting diode, laser diode, formation optical device wafer using to be laminated with the optical device layer that is made up of CaCl2 compounds semiconductor and to be formed as multiple regions that cancellate many segmentation preset lines mark off on the sapphire substrate surface in roughly circular plate shape.Then along segmentation preset lines segmentation optical device wafer, thus each optical device is produced.
As the method splitting above-mentioned optical device wafer along segmentation preset lines, propose following method, focal point is aligned in the process for sapphire-based intralamellar part forming optical device wafer, the pulse laser light relative to sapphire substrate with permeability wavelength is irradiated to sapphire substrate along segmentation preset lines, upgrading layer as break origins is formed continuously at process for sapphire-based intralamellar part along segmentation preset lines, external force is applied along being formed with this segmentation preset lines as the upgrading layer of break origins, thus segmentation wafer (for example, see patent document 1).
[patent document 1] Japanese Patent No. 3408805 publication
But, can along segmentation preset lines at the processing conditions of process for sapphire-based intralamellar part formation as the upgrading layer of break origins even if set, if the product batch number of sapphire substrate is different or the manufacturer of sapphire substrate is different, sapphire substrate then for same size same thickness is processed with the same terms, also can there is upgrading layer and insufficient or from segmentation preset lines depart from and crack damage optical device problem.That is, Al is made
2o
3the stage of growing up can produce crystal defect (oxygen defect) at sapphire substrate, even if thus for the sapphire substrate of same size same thickness, if product batch number is different or the manufacturer of sapphire substrate is different, then in order to be formed as the appropriate upgrading layer of break origins along segmentation preset lines at process for sapphire-based intralamellar part, preferably set processing conditions according to sapphire substrate at every turn.
Summary of the invention
The present invention completes in view of the foregoing, even if its major technique problem is to provide a kind of different for product batch number or that manufacturer is different sapphire substrate also can form the processing method of the sapphire substrate of appropriate upgrading layer.
In order to solve above-mentioned major technique problem, the invention provides a kind of laser processing of sapphire substrate, focal point be registered to the inside of sapphire substrate and irradiate the pulse laser light relative to sapphire substrate with the wavelength of permeability along segmentation preset lines, the upgrading layer as break origins is formed along segmentation preset lines at process for sapphire-based intralamellar part, the feature of this laser processing is to comprise: processing conditions setting procedure, sets at least 2 kinds of processing conditions accordingly with the characteristic of sapphire substrate; Criterion setting procedure, for differentiating the sapphire substrate being set at least 2 kinds of processing conditions; Processing conditions determining step, differentiates sapphire substrate according to the criterion set by this criterion setting procedure, from least 2 kinds of processing conditions set this processing conditions setting procedure of differentiated sapphire substrate, determines 1 processing conditions; And upgrading layer forming step, according to the processing conditions determined in this processing conditions determining step, the focal point of laser beam be positioned the inside of sapphire substrate and irradiate along segmentation preset lines, forming the upgrading layer as break origins in the inside of sapphire substrate along segmentation preset lines.
Above-mentioned criterion setting procedure processes the laser beam less than the output of sapphire substrate degree to sapphire substrate internal irradiation, and according to the reaction light now sent, the laser beam of trying to achieve the limit sending reaction light exports, setting criterion.
The processing method of sapphire substrate of the present invention comprises: processing conditions setting procedure, sets at least 2 kinds of processing conditions accordingly with the characteristic of sapphire substrate, criterion setting procedure, for differentiating the sapphire substrate being set at least 2 kinds of processing conditions, processing conditions determining step, differentiates sapphire substrate according to the criterion set by criterion setting procedure, from least 2 kinds of processing conditions set processing conditions setting procedure of differentiated sapphire substrate, determines 1 processing conditions, and upgrading layer forming step, according to the processing conditions determined in processing conditions determining step the focal point of laser beam be positioned process for sapphire-based intralamellar part and irradiate along segmentation preset lines, the upgrading layer as break origins is formed along segmentation preset lines at process for sapphire-based intralamellar part, therefore, it is possible to the processing conditions set with the characteristic corresponding to sapphire substrate implements upgrading layer forming step, thus can eliminate because laser beam exports not enough and cause formed upgrading layer insufficient, or the problem to crack at sapphire substrate because the output of laser beam excessively causes departing from segmentation preset lines.
Accompanying drawing explanation
Fig. 1 is the stereogram of the laser processing device of processing method for implementing sapphire substrate of the present invention.
Fig. 2 is the block diagram of the formation of the laser light irradiation unit of the laser processing device equipment briefly expressed shown in Fig. 1.
Fig. 3 is the stereogram of the optical device wafer using the processing method of sapphire substrate of the present invention to process.
Fig. 4 is the stereogram representing the state optical device wafer shown in Fig. 3 being attached at the boundary belt being assemblied in ring-shaped frame.
Fig. 5 is the key diagram of the criterion setting procedure of the processing method of sapphire substrate of the present invention.
Fig. 6 is the key diagram of the upgrading layer forming step of the processing method of sapphire substrate of the present invention.
Symbol description
1 laser processing device; 2 stationary base; 3 chuck table mechanisms; 36 chuck table; 37 processing feed units; 38 the 1st index feed unit; 4 laser light irradiation member supporting mechanisms; 43 the 2nd index feed unit; 5 laser light irradiation parts; 53 focal point position adjustment unit; 6 laser light irradiation unit; 62 pulse laser light oscillating units; 63 export adjustment unit; 64 deviation mirrors; 65 collector lenses; 66 dichroscopes; 67 cut-off filter; 68 image units; 7 control units; 8 aligned units; 10 optical device wafers; F ring-shaped frame; T splicing tape
Detailed description of the invention
The preferred embodiment of the laser processing of wafer of the present invention is further described referring to accompanying drawing.
Fig. 1 illustrates the stereogram of the laser processing device of the processing method for implementing sapphire substrate of the present invention.Laser processing device 1 shown in Fig. 1 has stationary base 2, so that the mode of processing direction of feed (X circumferential direction) movement shown in arrow X this stationary base 2 can be disposed in keep the chuck table mechanism 3 of machined object, with can in the laser light irradiation member supporting mechanism 4 that in the mode of index feed direction (Y direction) movement arrow Y shown in be disposed in stationary base 2 orthogonal with above-mentioned X-direction, so that the mode of focal point position adjustment direction (Z-direction) movement shown in arrow Z the laser light irradiation parts 5 of this laser light irradiation member supporting mechanism 4 can be disposed in.
Above-mentioned chuck table mechanism 3 have along X-direction parallel be disposed in pair of guide rails in stationary base 2 31,31, can be disposed in the 1st sliding shoe 32 on this guide rail 31,31 in the mode of X-direction movement, so that the 2nd sliding shoe 33 on the 1st sliding shoe 32 can be disposed in the mode of the index feed direction movement shown in arrow Y, be supported in the cover platform 35 on the 2nd sliding shoe 33, the chuck table 36 as machined object holding unit by cylinder part 34.This chuck table 36 has the sucker 361 formed by porous material, will remain on the upper surface (holding surface) of sucker 361 by not shown absorbing unit as the such as discoid semiconductor wafer of machined object.Chuck table 36 as constructed as above rotates by means of the not shown pulse motor be disposed in cylinder part 34.The fixture 362 for fixing ring-shaped frame described later is equipped in chuck table 36.
Above-mentioned 1st sliding shoe 32 is provided with and above-mentioned pair of guide rails 31,31 chimeric a pair directed groove 321,321 at its lower surface, and surface is provided with the pair of guide rails 322,322 along the parallel formation of Y direction thereon.1st sliding shoe 32 as constructed as above is configured to, by directed groove 321,321 and pair of guide rails 31,31 chimeric, to move along pair of guide rails 31,31 in X-direction.Chuck table mechanism 3 in illustrated embodiment has for making the 1st sliding shoe 32 along the processing feed unit 37 of pair of guide rails 31,31 in X-direction movement.Processing feed unit 37 has and is parallelly disposed in external thread rod 371 between above-mentioned pair of guide rails 31 and 31, the drive source such as pulse motor 372 for this external thread rod 371 of rotary actuation.With regard to external thread rod 371, its one end is supported in the drive tab 373 being fixed on above-mentioned stationary base 2 in rotatable mode, the output shaft of its other end and above-mentioned pulse motor 372 is in transmission connection.Further, external thread rod 371 be provided projectingly on the internal thread hole that runs through that the not shown internal thread block of the central portion lower surface of the 1st sliding shoe 32 is formed and screw togather.Therefore, rotate and reverse driving by means of pulse motor 372 pairs of external thread rods 371, thus the 1st sliding shoe 32 moves in X-direction along guide rail 32,32.
Above-mentioned 2nd sliding shoe 33 is provided with and the pair of guide rails 322 of the upper surface being arranged at above-mentioned 1st sliding shoe 32,322 chimeric a pair directed groove 331,331 at its lower surface, consist of by by this directed groove 331,331 and pair of guide rails 322,322 chimeric, can move in the index feed direction shown in arrow Y.Chuck table mechanism 3 in illustrated embodiment has for making the 2nd sliding shoe 33 along the 1st index feed unit 38 of pair of guide rails 322,322 in Y direction movement being arranged at the 1st sliding shoe 32.1st index feed unit 38 has and is set in parallel in external thread rod 381 between above-mentioned pair of guide rails 322 and 322, for carrying out the drive sources such as the pulse motor 382 of rotary actuation to this external thread rod 381.With regard to external thread rod 381, its one end is rotatable mode can be supported in the drive tab 383 being fixed on above-mentioned 1st sliding shoe 32 upper surface, and the output shaft of its other end and above-mentioned pulse motor 382 is in transmission connection.And external thread rod 381 with screw togather being provided projectingly on the internal thread hole that runs through that the not shown internal thread block of the central portion lower surface of the 2nd sliding shoe 33 is formed.Therefore, rotate and reverse driving by means of pulse motor 382 pairs of external thread rods 381, thus the 2nd sliding shoe 33 moves in Y direction along guide rail 322,322.
Above-mentioned laser light irradiation member supporting mechanism 4 have along the index feed direction shown in arrow Y parallel be disposed in pair of guide rails in stationary base 2 41,41, can be disposed in the moveable support pedestal 42 on this guide rail 41,41 in the mode of Y direction movement.This moveable support pedestal 42 has the movable support portion 421 be disposed in a movable manner on guide rail 41,41, is installed on the department of assembly 422 in this movable support portion 421.Department of assembly 422 is arranged with the pair of guide rails 423,423 extended in Z-direction in parallel a side.The laser light irradiation member supporting mechanism 4 of illustrated embodiment has for making moveable support pedestal 42 along the 2nd index feed unit 43 of pair of guide rails 41,41 in Y direction movement.2nd index feed unit 43 has and is parallelly disposed in external thread rod 431 between above-mentioned pair of guide rails 41,41, for drive sources such as the pulse motors 432 to this external thread rod 431 rotary actuation.With regard to external thread rod 431, its one end is rotatable mode can be supported in the not shown drive tab being fixed on above-mentioned stationary base 2, and the output shaft of its other end and above-mentioned pulse motor 432 is in transmission connection.Further, external thread rod 431 with screw togather being provided projectingly on the internal thread hole that the not shown internal thread block of the central portion lower surface in the movable support portion 421 forming moveable support pedestal 42 is formed.Therefore, rotate and reverse driving by means of pulse motor 432 pairs of external thread rods 431, thus moveable support pedestal 42 moves in Y direction along guide rail 41,41.
Laser light irradiation parts 5 in illustrated embodiment have parts holder 51, are installed on the laser light irradiation unit 6 of this parts holder 51.Parts holder 51 is provided with the mode that can slide and the pair of guide rails 423, the 423 chimeric a pair directed groove 511,511 that are arranged at above-mentioned department of assembly 422, this directed groove 511,511 is embedded in above-mentioned guide rail 423,423, thus is supported for and can moves in Z-direction.
Illustrated laser light irradiation parts 5 have for making parts holder 51 along the focal point position adjustment unit 53 of pair of guide rails 423,423 in Z-direction movement.Focal point position adjustment unit 53 has and is disposed in external thread rod (not shown) between pair of guide rails 423,423, for carrying out the drive source of the pulse motor 532 of rotary actuation etc. to this external thread rod, by means of pulse motor 532, driving is rotated and reverse to not shown external thread rod, thus parts holder 51 and laser light irradiation unit 6 are moved in Z-direction along guide rail 423,423.Further, in the illustrated embodiment, carry out rotating forward by paired pulses motor 532 and drive, thus laser light irradiation unit 6 is moved upward, enter line inversion driving by paired pulses motor 532, thus laser light irradiation unit 6 is moved downwards.
Illustrated laser light irradiation unit 6 has and is fixed on above-mentioned parts holder 51 and the housing 61 of the drum of horizontal-extending in fact.See Fig. 2, this laser light irradiation unit 6 is described.
Illustrated laser light irradiation unit 6 has the pulse laser light oscillating unit 62 be disposed in above-mentioned housing 61, adjust this pulse laser light oscillating unit 62 to vibrate the output adjustment unit 63 of output of the pulse laser light, using the deviation mirror 64 that the pulse laser light that be have adjusted output by this output adjustment unit 63 is changed towards the holding surface travel direction of the upper surface as above-mentioned chuck table 36, assemble by this deviation mirror 64 converted direction pulse laser light and to be held in chuck table 36 machined object W irradiate collector lens 65.
Above-mentioned pulse laser light oscillating unit 62 be configured to have such as vibrate wavelength be the pulse laser light of 532nm pulsed laser light line oscillator 621, be attached to the repetition rate setup unit 622 of this pulsed laser light line oscillator 621.The output of the pulse laser light that vibrated by pulse laser light oscillating unit 62 is adjusted to regulation and exports by above-mentioned output adjustment unit 63.These pulse laser light oscillating units 62 and output adjustment unit 63 are controlled by control unit described later.
Proceed to illustrate see Fig. 2, illustrated laser processing device 1 has the dichroscope 66 be disposed between above-mentioned deviation mirror 64 and collector lens 65.This dichroscope 66 has and makes the light that pulse laser light oscillating unit 62 vibrates the wavelength pass through and reflect the function of the light of other wavelength.Therefore, dichroscope 66 pulse laser light is radiated at the machined object W being held in chuck table 36 and the light sent reflection.
Can also be configured to the lighting unit that is made up of white light to collector lens 65 understand the pulse laser light that coalescence is irradiated irradiation area throw light on.
Laser processing device 1 in illustrated embodiment have the light blocking prescribed limit wavelength in the reverberation that reflected by above-mentioned dichroscope 66 cut-off filter 67, catch the light the image unit 68 of shooting that have passed this cut-off filter 67.Cut-off filter 67 blocks the light as 510 ~ 550nm of the wavelength region of the pulse laser light that vibrated by above-mentioned pulsed laser light line oscillator 621, and the light of wavelength is in addition passed through.Image unit 68 sends to control unit 7 by catching the light that have passed cut-off filter 67 picture signal obtained of also making a video recording.Control unit 7, according to the picture signal from image unit 68, differentiates to being held in the machined object W irradiated with pulse laser of chuck table 36 and the reaction light sent.This control unit 7 has the memory 71 of the characteristic and at least 2 kinds of processing conditions setting that store and correspond to the sapphire substrate forming optical device wafer described later and the criterion for the sapphire substrate that judges to be set at least 2 kinds of processing conditions.In addition, control unit 7 is inputted detection signal by above-mentioned image unit 68 and aligned units described later 8, and input processing conditions etc. from input block 70, be also configured to above-mentioned pulsed laser light line oscillator 621, repetition rate setup unit 622, export the output such as adjustment unit 63 and monitor 9 control signal.
Return Fig. 1 to go on to say, illustrated laser processing device 1 has the leading section being disposed in housing 61 and the aligned units 8 of being made a video recording to the machining area that should carry out Laser Processing by above-mentioned laser light irradiation unit 6.This aligned units 8 is made up of the optical unit such as microscope and CCD camera, and by making a video recording, the picture signal obtained sends to above-mentioned control unit 7.
The processing method of the sapphire substrate using above-mentioned laser processing device 1 to implement then is described.
Fig. 3 (a) and (b) illustrate the stereogram of the optical device wafer using the processing method of sapphire substrate of the present invention to process and amplify the profile representing major part.Optical device wafer 10 shown in Fig. 3 (a) He (b) be such as diameter be 150mm, thickness is the optical device layer (epitaxial layer) 12 be made up of n-type nitride semiconductor layer 121 and p-type nitride semiconductor layer 122 of the stacked such as 5 μm of thickness of surperficial 11a of the sapphire substrate 11 of 100 μm.And, be formed with the optical device such as light emitting diode, laser diode 14 in the multiple regions marked off by many segmentation preset lines 13 being formed with optical device layer (epitaxial layer) 12 in clathrate.
The following describes and use laser processing device 1 to form the processing method of the sapphire substrate of the upgrading layer as break origins in sapphire substrate 11 inside of formation optical device wafer 10 along segmentation preset lines 13.
Further, there is the substrate manufactured by 2 product batch numbers (A lot number, B lot number) in the sapphire substrate 11 forming optical device wafer 10.To the sapphire substrate manufactured by 2 product batch numbers (A lot number, B lot number) the experimental processing conditions obtaining the best for forming upgrading layer at process for sapphire-based intralamellar part respectively, set respective processing conditions (processing conditions setting procedure).
Such as can set the 1st processing conditions for the sapphire substrate manufactured by A lot number as follows.
Laser beam wavelength: 532nm
Repetition rate: 45kHz
Average output: 0.13W
Focal point footpath: Φ 1 μm
Processing feed speed: 360mm/ second
The 2nd processing conditions for the sapphire substrate manufactured by B lot number can be set as follows.
Laser beam wavelength: 532nm
Repetition rate: 45kHz
Average output: 0.15W
Focal point footpath: Φ 1 μm
Processing feed speed: 360mm/ second
As above the 1st processing conditions set and the 2nd processing conditions are stored in the memory 71 of above-mentioned control unit 7.
Further, the criterion setting procedure for differentiating sapphire substrate or the sapphire substrate based on the manufacture of B lot number manufactured based on above-mentioned A lot number is implemented.This criterion setting procedure by processing less than the laser beam of the output of the degree of sapphire substrate to sapphire substrate internal irradiation, according to the reaction light now sent, the laser beam obtaining the limit sending reaction light exports, setting criterion.According to the experiment of the present inventor etc., exported as 0.025W by the laser beam sending the limit of reaction light observing the known sapphire substrate based on the manufacture of A lot number of monitor 9.On the other hand, the laser beam sending the limit of reaction light by observing the known sapphire substrate based on the manufacture of B lot number of monitor 9 exports as 0.035W.Therefore, the output that laser beam exports is set as the laser beam output of the limit of the sapphire substrate based on the manufacture of A lot number and 0.025W and based on the output of the laser beam output of the limit of the sapphire substrate of B lot number manufacture and the centre of 0.035W and 0.03W, thus the sapphire substrate based on the manufacture of A lot number can be judged to be when sending reaction light, and the sapphire substrate to being judged to when reaction light to manufacture based on B lot number unconfirmed.As above, the laser beam output of the sapphire substrate having differentiated manufacture based on A lot number if obtained and the sapphire substrate based on the manufacture of B lot number, then such as set following criterion, be stored in the memory 71 of above-mentioned control unit 7.
Criterion:
Laser beam wavelength: 532nm
Repetition rate: 45kHz
Average output: 0.03W
Focal point footpath: Φ 1 μm
Processing feed speed: 360mm/ second
As above, 1st processing conditions of setting for the sapphire substrate manufactured based on A lot number and the 2nd processing conditions for the sapphire substrate manufactured based on B lot number, and the criterion set for differentiating based on the sapphire substrate of A lot number manufacture and the sapphire substrate based on the manufacture of B lot number, 1st processing conditions, the 2nd processing conditions and criterion are stored in the memory 71 of control unit 7, laser processing device 1 is processed the optical device wafer 10 shown in above-mentioned Fig. 3 as follows in this case.
First, the surperficial 10a(wafer attaching optical device wafer 10 as shown in Figure 4 on the surface of the splicing tape T being assemblied in ring-shaped frame F attaches step).Therefore, the back side 11b being attached at the sapphire substrate 11 of the optical device eyeglass 10 on splicing tape T surface just becomes upside.
After implementing above-mentioned wafer attaching step, the splicing tape T of optical device wafer 10 is sidelong and is placed in the chuck table 36 of the laser processing device shown in Fig. 1.And, by making not shown absorbing unit carry out work, thus via splicing tape T, optical device wafer 10 absorption is held in (wafer maintenance step) in chuck table 36.Therefore, the back side 11b being held in the optical device wafer 10 of chuck table 36 is upside.
As mentioned above, absorption keeps the processed unit 37 of giving of chuck table 36 of optical device wafer 10 to be positioned immediately below aligned units 8.If chuck table 36 is located in immediately below aligned units 8, then perform the aligning operation should carrying out the machining area of Laser Processing being detected optical device wafer 10 by aligned units 8 and control unit 7.Namely, aligned units 8 and control unit 7 perform for carrying out the segmentation preset lines 13 that formed in the prescribed direction of optical device wafer 10 and the image procossing such as Graphic Pattern Matching along the contraposition between the collector lens 65 splitting preset lines 13 and irradiate the laser light irradiation unit 6 of laser beam, perform the aligning of laser light irradiation position successively.In addition, the segmentation preset lines 13 extended in the direction orthogonal with afore mentioned rules direction being formed at optical device wafer 10 is performed too successively to the aligning of laser light irradiation position.
As above, the segmentation preset lines 101 that the optical device wafer 10 detecting maintenance in chuck table 36 is formed, carry out laser light irradiation position on time, as shown in Figure 5, chuck table 36 is moved to the laser light irradiation region residing for collector lens 65 of laser light irradiation unit 6, one end of the segmentation preset lines 101 of regulation (left end of Fig. 5) is in immediately below collector lens 65.Then, collector lens 65 will be have passed and the focal point P of pulse laser light that irradiates is positioned the back side 11b(upper surface that distance forms the sapphire substrate 11 of optical device wafer 10) lower position of such as 15 μm.
Then, based on now whether creating reaction light, control unit 7 to the sapphire substrate 11 irradiated with pulse laser light forming optical device wafer 10, differentiates that the sapphire substrate 11 forming optical device wafer 10 is based on the sapphire substrate of A lot number manufacture or the sapphire substrate (sapphire substrate discriminating step) manufactured based on B lot number according to above-mentioned criterion.Namely, start laser light irradiation unit 6, be 532nm by wavelength, repetition rate is 45kHz, on average exports as the pulse laser light of 0.03W is radiated at sapphire substrate 11 by collector lens 65, and chuck table 36 is moved in direction shown in arrow X1 in Figure 5 with the processing feed speed of 360mm/ second.In this sapphire substrate discriminating step, as shown in Figure 2, be radiated at the optical device wafer 10 in machined object W(sapphire substrate discriminating step) wavelength be that the pulse laser light of 532nm is at the back side 11b(upper surface of sapphire substrate 11 forming optical device wafer 10) reflection, by arriving dichroscope 66 after collector lens 65, reflected rear arrival cut-off filter 67 by dichroscope 66.It is the light of 510 ~ 550nm that cut-off filter 67 as mentioned above blocks wavelength, and therefore wavelength is that the reverberation of the pulse laser light of 532nm can be blocked.On the other hand, if the sapphire substrate 11 forming optical device wafer 10 based on pulse laser light irradiation and react, then can notify the reaction light producing blue (400nm region).The reaction light in this 400nm region, by arriving dichroscope 66 after collector lens 65, by cut-off filter 67 after being reflected, thus can be caught on camera unit 68 and capture by dichroscope 66.As above, make average export pulse laser light for 0.03W by collector lens 65 after be irradiated to sapphire substrate 11 time, produce reaction light, this reaction light to be caught on camera by cut-off filter 67 unit 68 capture time, control unit 7 is judged to be that the sapphire substrate 11 of the formation optical device wafer 10 being held in chuck table 36 is the sapphire substrates manufactured based on A lot number.And, when make average export pulse laser light for 0.03W by collector lens 65 after be irradiated to sapphire substrate 11 time do not produce reaction light, the reverberation of pulse laser light is as above cut off filter 67 and blocks, and thus image unit 68 cannot capture light.Therefore, control unit 7 is judged to be that the sapphire substrate 11 of the formation optical device wafer 10 being held in chuck table 36 is the sapphire substrates manufactured based on B lot number.
After implementing above-mentioned sapphire substrate discriminating step, control unit 7 determines the processing conditions of the sapphire substrate 11 for the formation optical device wafer 10 being held in chuck table 36.Namely, control unit 7 is judged to be that in above-mentioned sapphire substrate discriminating step the sapphire substrate 11 of the formation optical device wafer 10 being held in chuck table 36 is the sapphire substrates based on the manufacture of A lot number, be defined as above-mentioned 1st processing conditions, when being judged to be that in above-mentioned sapphire substrate discriminating step the sapphire substrate 11 of the formation optical device wafer 10 being held in chuck table 36 is the sapphire substrates based on the manufacture of B lot number, be defined as above-mentioned 2nd processing conditions (processing conditions determining step).
As above, if determine the processing conditions of the sapphire substrate 11 for the formation optical device wafer 10 being held in chuck table 36, then the processing conditions determined according to the sapphire substrate 11 for the formation optical device wafer 10 being held in chuck table 36 implements upgrading layer forming step.
When implementing upgrading layer forming step, as shown in Figure 6 (a), chuck table 36 is moved to the laser light irradiation region residing for collector lens 65, the one end (left end of Fig. 6 (a)) of the regulation segmentation preset lines 13 being formed at optical device wafer 10 is arranged at immediately below collector lens 65.Then, the focal point P of the pulse laser light irradiated by collector lens 65 is positioned the thickness direction immediate vicinity of the sapphire substrate 11 forming optical device wafer 10.
Then, control unit 7 starts laser light irradiation unit 6, by collector lens 65 irradiated with pulse laser light, and start processing and give unit 37, chuck table 36 is moved (upgrading layer forming step) in direction shown in arrow X1 in figure 6 (a) with the processing feed speed of regulation.In this upgrading layer forming step, if be judged to be in above-mentioned sapphire substrate discriminating step, the sapphire substrate 11 of the formation optical device wafer 10 being held in chuck table 36 is the sapphire substrates manufactured based on B lot number, then implemented with above-mentioned 2nd processing conditions, in above-mentioned sapphire substrate discriminating step, be judged to be that the sapphire substrate 11 of the formation optical device wafer 10 being held in chuck table 36 is the sapphire substrates manufactured based on A lot number, then implemented with above-mentioned 1st processing conditions.And, as shown in Figure 6 (b), if reach the other end (right-hand member of Fig. 6 (b)) of segmentation preset lines 13 from the irradiation position of the pulse laser light of collector lens 65 irradiation, then the irradiation of stop pulse laser beam, and stop the movement of chuck table 36.Its result, as shown in Figure 6 (b), forms upgrading layer 110 at the sapphire substrate 11 forming optical device wafer 10 along the segmentation preset lines 13 specified.This upgrading layer forming step is to implement corresponding to the processing conditions of property settings of sapphire substrate 11 of the formation optical device wafer 10 being held in chuck table 36, therefore, it is possible to eliminate because laser beam exports not enough and cause formed upgrading layer insufficient, or the problem cracked at sapphire substrate because the output of laser beam excessively causes departing from segmentation preset lines.
As mentioned above, if all segmentation preset lines 13 formed along the prescribed direction at optical device wafer 10 implement above-mentioned upgrading layer forming step, then the chuck table 36 maintaining optical device wafer 10 is arranged at the position after have rotated 90 degree.Then, all segmentation preset lines 13 formed along the direction orthogonal with afore mentioned rules direction at optical device wafer 10 implement above-mentioned upgrading layer forming step.
As mentioned above, the optical device wafer 10 implementing upgrading layer forming step along all segmentation preset lines 13 is moved to wafer separation step, makes it rupture in this step along the segmentation preset lines 13 being formed with upgrading layer.
Claims (1)
1. the laser processing of a sapphire substrate, focal point be registered to the inside of sapphire substrate and irradiate the pulse laser light relative to sapphire substrate with the wavelength of permeability along segmentation preset lines, the upgrading layer as break origins is formed along segmentation preset lines at process for sapphire-based intralamellar part
The feature of this laser processing is to comprise:
Processing conditions setting procedure, sets at least 2 kinds of processing conditions accordingly with the characteristic of sapphire substrate;
Criterion setting procedure, for differentiating the sapphire substrate being set at least 2 kinds of processing conditions;
Processing conditions determining step, differentiates sapphire substrate according to the criterion set by this criterion setting procedure, from least 2 kinds of processing conditions set this processing conditions setting procedure of differentiated sapphire substrate, determines 1 processing conditions; And
Upgrading layer forming step, according to the processing conditions determined in this processing conditions determining step, the focal point of laser beam be positioned the inside of sapphire substrate and irradiate along segmentation preset lines, the upgrading layer as break origins is formed along segmentation preset lines in the inside of sapphire substrate
In this criterion setting procedure, the internal irradiation to sapphire substrate processes the laser beam less than the output of sapphire substrate degree, and according to the reaction light now sent, the laser beam of trying to achieve the limit sending reaction light exports, setting criterion.
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| JP2011149388A JP5833362B2 (en) | 2011-07-05 | 2011-07-05 | Processing method of sapphire substrate |
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| JP6121733B2 (en) | 2013-01-31 | 2017-04-26 | 浜松ホトニクス株式会社 | Laser processing apparatus and laser processing method |
| JP2017204574A (en) * | 2016-05-12 | 2017-11-16 | 株式会社ディスコ | Processing method and laser processing apparatus of sapphire wafer |
| JP6651257B2 (en) * | 2016-06-03 | 2020-02-19 | 株式会社ディスコ | Workpiece inspection method, inspection device, laser processing device, and expansion device |
| CN115519238A (en) * | 2021-06-25 | 2022-12-27 | 台达电子工业股份有限公司 | Laser welding system and method adopting dynamic light spots |
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| CN1145598A (en) * | 1995-01-13 | 1997-03-19 | 东海工业缝纫机株式会社 | Laser processing machine and sewing machine with laser processing function |
| CN101253018A (en) * | 2006-09-28 | 2008-08-27 | 三菱电机株式会社 | Laser machining apparatus |
| CN101989640A (en) * | 2009-08-04 | 2011-03-23 | 株式会社迪思科 | Processing method of wafer |
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| JP2571656B2 (en) * | 1992-08-06 | 1997-01-16 | 浜松ホトニクス株式会社 | Laser processing equipment |
| JP4005440B2 (en) * | 2002-08-01 | 2007-11-07 | 住友重機械工業株式会社 | Laser processing method |
| JP4468151B2 (en) * | 2004-12-16 | 2010-05-26 | 大日本印刷株式会社 | Material discrimination device |
| JP4909657B2 (en) * | 2006-06-30 | 2012-04-04 | 株式会社ディスコ | Processing method of sapphire substrate |
| JP2009140958A (en) * | 2007-12-03 | 2009-06-25 | Tokyo Seimitsu Co Ltd | Laser dicing device and dicing method |
| JP5552627B2 (en) * | 2009-01-15 | 2014-07-16 | 並木精密宝石株式会社 | Internally modified substrate for epitaxial growth, crystal film formed by using the same, device, bulk substrate, and manufacturing method thereof |
| JP5307612B2 (en) * | 2009-04-20 | 2013-10-02 | 株式会社ディスコ | Processing method of optical device wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1145598A (en) * | 1995-01-13 | 1997-03-19 | 东海工业缝纫机株式会社 | Laser processing machine and sewing machine with laser processing function |
| CN101253018A (en) * | 2006-09-28 | 2008-08-27 | 三菱电机株式会社 | Laser machining apparatus |
| CN101989640A (en) * | 2009-08-04 | 2011-03-23 | 株式会社迪思科 | Processing method of wafer |
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| KR20130005227A (en) | 2013-01-15 |
| TWI590900B (en) | 2017-07-11 |
| JP5833362B2 (en) | 2015-12-16 |
| CN102861992A (en) | 2013-01-09 |
| JP2013016703A (en) | 2013-01-24 |
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