CN102857212B - Universal drive chip of high-power semiconductor switching device - Google Patents
Universal drive chip of high-power semiconductor switching device Download PDFInfo
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- CN102857212B CN102857212B CN201210372933.4A CN201210372933A CN102857212B CN 102857212 B CN102857212 B CN 102857212B CN 201210372933 A CN201210372933 A CN 201210372933A CN 102857212 B CN102857212 B CN 102857212B
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Abstract
The invention relates to a universal drive chip of a high-power semiconductor switching device. The universal drive chip comprises a power pin, a ground pin, a forward input pin, a reverse input pin and a drive output pin. MOS (metal oxide semiconductor) pair transistors, a level selection circuit and a DC-DC (direct-current to direct-current) conversion circuit are integrated in the universal drive chip, wherein the DC-DC conversion circuit is connected with the power pin; the MOS pair transistors consist of a P-MOS transistor and an N-MOS transistor, the source of the P-MOS transistor is connected with the power pin, the source of the N-MOS transistor is connected with the ground pin and the drain of the N-MOS transistor is connected with the drive output pin; and one input end of the level selection circuit is connected with the forward input pin and is connected with the ground pin through a first resistor, and the other input end of the level selection circuit is connected with the reverse input pin and is connected with the output end of the DC-DC conversion circuit through a second resistor, and the output end of the level selection circuit is connected with the grids of the MOS pair transistors through a drive unit. The drive chip can be used for an electromagnetic induction heating device. The control method of the drive chip is flexible, the space occupied by the application circuit can be greatly reduced and the anti-interference performance is improved.
Description
Technical field
the present invention relates to driving chip, more particularly, is a kind of high-power semiconductor switch device drive chip of high-power.
Background technology
High-power driving application apparatus, such as utilize device---the electromagnetic oven that IGBT (Insulated Gate Bipolar Transistor) drives, IH (Induction Heating) rice cooker etc., are widely used.People are also constantly making improvements, with improving SNR and reducing costs.
Existing IGBT drive circuit adopts discrete component composition, and cost is high, and take up room large, assembling is complicated, poor anti jamming capability, and quiescent dissipation is large, does not meet the miniaturization of electronic product, integrated development trend.
Summary of the invention
The object of the invention is to, the element existed for existing high-power drive circuit takes up room greatly, poor anti jamming capability and the single defect of control model, a kind of high-power semiconductor switch device drive chip of high-power is provided.
A kind of high-power semiconductor switch device of the present invention drive chip of high-power comprises: supply pin, lower margin, forward input pin, oppositely input pin and driver output pin, be integrated with MOS in described chip to pipe, level selection circuit and DC-DC conversion circuit, described DC-DC conversion circuit is connected with supply pin for generation of+5V power supply; Described MOS to be managed by P-MOS pipe and the drain electrode of N-MOS pipe connects forms, and P-MOS pipe source electrode connects supply pin, N-MOS pipe source ground pin, and drain electrode connects described driver output pin; An input termination forward input pin of described level selection circuit is also by the first grounding through resistance pin, another is inputted the reverse input pin of termination and is connect the output of DC-DC conversion circuit by the second resistance, and the output of level selection circuit connects the grid of MOS to pipe through driver element.
Driving chip of the present invention, in order to can simplify further application circuit (as, the temperature measurement circuit of high power device IGBT), also in chip, be integrated with temperature measurement circuit, be provided with temperature output pin, described temperature measurement circuit is composed in series by constant current mirror circuit and the first semiconductor PN, powered by described DC-DC conversion circuit, temperature output pin described in the public termination of constant current mirror circuit and the first semiconductor PN, the other end grounding leg of the first semiconductor PN, this temperature measurement circuit is for detecting the temperature of this driving chip self, and for detecting the temperature of high-power semiconductor switch device GND pin.
Preferably, described level selection circuit be with or door or XOR gate.
Preferably, also amplifying circuit is connected between described temperature measurement circuit and described temperature output pin.
Driving chip of the present invention; in order to can more simplify application circuit (as; the circuit of high power device IGBT control voltage input clamper); also protection module is integrated with in chip; this protection module is made up of the second PN junction be connected between the source electrode of described P-MOS pipe and drain electrode and the 3rd PN junction be connected between the source electrode of described N-MOS pipe and drain electrode; for the protection of the interference-free pulsing effect of high-power semiconductor switch device being connected to driver output pin, and the driving voltage of this driving chip itself is clamped down on zone of reasonableness.
Preferably, described second PN junction and the 3rd PN junction transformation formation in the structure of described P-MOS pipe and described N-MOS pipe respectively.
Preferably, described MOS matches to the characteristic of the internal resistance of pipe with the IGBT being connected to driver output pin.
Preferably, this driving chip adopts SOT23-6 encapsulation, and the length of chip is 2.8-3mm, and thickness is 0.9-1.45mm, and the width of chip body is 1.5-1.75mm.
Above-mentioned driving chip can be applied to the driving of IGBT in electromagnetic induction heater, such as, for driving the IGBT in electromagnetic oven.Preferably, the lower margin of described driving chip is close to and is connected the E pole of described IGBT.
This driving chip is integrated with level selection circuit and correspondence is provided with forward input pin and reverse input pin, can easy selection be combined by the driving incoming level of driving element by the level configuration of these two pins, control mode is very flexible, can be suitable for different main control chip control programs.Owing to driving, pipe, level selection circuit and DC-DC conversion circuit are all integrated in chip, substantially reduce the space taken, and improve antijamming capability.In addition, it drives and adopts metal-oxide-semiconductor to pipe, and quiescent dissipation is very little.
Accompanying drawing explanation
Fig. 1 is the theory diagram of a typical embodiment high-power semiconductor switch device drive chip of high-power.
Embodiment
Below in conjunction with accompanying drawing and example, the present invention is further described.
As shown in Figure 1; this high-power semiconductor switch device drive chip of high-power 10 has six pins; be respectively: supply pin VDD, lower margin GND, forward input pin IN+, oppositely input pin IN-, driver output pin OUT and temperature output pin Tout, be integrated with MOS to pipe 1 and driver element 2, level selection circuit 3, DC-DC conversion circuit 4, temperature measurement circuit 5 and protection module 6 in chip 10.DC-DC conversion circuit 4 is connected with supply pin VDD, for generation of+5V power supply.
MOS is made up of P-MOS pipe 1a and N-MOS pipe 1b pipe 1, and P-MOS pipe 1a source electrode meets supply pin VDD, and N-MOS pipe 1b source ground pin GND, P-MOS pipe 1a and N-MOS pipe 1b drain electrode is connected and is connected to driver output pin OUT.
Driver element 2 is mainly used in realizing signal shaping, can adopt gate circuit, e.g., not gate, with door or door etc.
Level selection circuit 3 adopts same or door, an input termination forward input pin IN+ of level selection circuit 3 is also by the first resistance 8 grounding leg GND, another is inputted the reverse input pin IN-of termination and is connect the output of DC-DC conversion circuit 4 by the second resistance 7, and the output of level selection circuit 3 connects the grid of MOS to pipe 1 through driver element 2.
The input and output truth table of this driving chip 10 is as follows:
| Reverse input pin IN- | Forward input pin IN+ | Driver output pin OUT |
| High | Unsettled (ground connection) | Low |
| Low | Unsettled (ground connection) | High |
| Unsettled (drawing high) | High | High |
| Unsettled (drawing high) | Low | Low |
| Unsettled (drawing high) | Unsettled (ground connection) | Low |
| Low | High | Low |
Can find out, the design of level selection circuit 3 makes this driving chip 10 control mode very flexible, can be suitable for the control program of different main control chips.
In some instances, level selection circuit 3 also can adopt XOR gate.Also can XOR gate with or behind the door face connect a not gate to form level selection circuit 3.
Temperature measurement circuit 5 one aspect is connected to the temperature of the high-power semiconductor switch device (e.g., IGBT) of driver output pin OUT for detecting, on the other hand for detecting the temperature of this driving chip 10 self.Temperature measurement circuit 5 is composed in series by the constant current mirror circuit and the first semiconductor PN being integrated in chip 10 inside, powered by DC-DC conversion circuit 4, the common port jointing temp output pin Tout of constant current mirror circuit and the first semiconductor PN, the other end grounding leg GND of the first semiconductor PN.During application, only the lower margin GND of this driving chip 10 need be close to and connect the GND pin (i.e. E pole) of described high-power semiconductor switch device, first semiconductor PN can the temperature of this driving chip of perception 10 self, and can by the temperature of high-power semiconductor switch device described in temperature detection perception, and then temperature transition is become analog voltage, exported by temperature output pin Tout, main control chip only need detect the temperature that this temperature output pin Tout voltage just can obtain described high-power semiconductor switch device and driving chip 10 thereof, to control described high-power semiconductor switch device and drive part temperature thereof reliably in time.
Between temperature measurement circuit 5 and temperature output pin Tout, be also connected with amplifying circuit (amplifying circuit and a temperature measurement circuit frame table being shown in Fig. 1), amplify for the voltage signal of the sign temperature exported temperature measurement circuit 5.Understandably, also amplifying circuit can not be set in driving chip 10, and by peripheral amplifying circuit, or with the amplifier in main control chip, the voltage signal of the sign temperature that driving chip 10 exports is amplified.
Protection module 6 is made up of the second PN junction 6a be connected between the source electrode of P-MOS pipe 1a and drain electrode and the 3rd PN junction 6b be connected between the source electrode of N-MOS pipe 1b and drain electrode.Utilize the second PN junction 6a and the 3rd PN junction 6b can by power vd D, driver output pin OUT, the potential difference between GND fix; form two clamping action; so both can protect the interference-free pulsing effect of high-power semiconductor switch device being connected to driver output pin OUT; the driving voltage of this driving chip 10 itself can be clamped down on zone of reasonableness again, thus reach two protection objects of protection this driving chip 10 and described high-power semiconductor switch device.
In some preferred embodiments; second PN junction 6a of protection module 6 and the 3rd PN junction 6b transformation formation in the structure of P-MOS pipe 1a and N-MOS pipe 1b respectively; make use of the fundamental characteristics of metal-oxide-semiconductor fully; simplify protective circuit; and do not take chip extra wafer space and inside more multiple resource, for small size encapsulation and low cost manufacture in enormous quantities provide possibility.And this protection philosophy is the semiconductor property based on metal-oxide-semiconductor itself, highly stable reliable protected effect therefore can be reached.
As shown in Figure 1, be also integrated with the 3rd resistance in driving chip 10, the 3rd resistance is connected between driver output pin OUT and lower margin GND.Understandably, the 3rd resistance also can not be integrated in driving chip 10, and adopts external mode.
Adopt MOS in this driving chip 10 to pipe 1 as drive circuit, greatly reduce quiescent dissipation.In addition, in certain embodiments, also can according to the internal resistance of the characteristic customization metal-oxide-semiconductor of IGBT to reach match control more.
Some preferred embodiment driving chip; not only be integrated with MOS to pipe 1 and driver element 2, level selection circuit 3, DC-DC conversion circuit 4, temperature measurement circuit 5 and protection module 6; but also achieve ultra-miniature package; such as; driving chip adopts SOT23-6 encapsulation to be a kind of representative instance; the length of chip is 2.8-3mm, and thickness is 0.9-1.45mm, and the width of chip body is 1.5-1.75mm.
Compared with discrete component drive circuit, at least there is following beneficial effect:
1) functional circuits such as the driving of high-power semiconductor switch device and thermometric, incoming level selection and output protection are integrated in same chip, save a large amount of relevant components and parts, save valuable PCB space, more simply controlled in production technology, thus production cost can be made greatly to reduce; And overall antijamming capability is stronger, controllability is stronger, shows more stable in adverse circumstances;
2) drive level can arbitrary disposition, can be applicable to the control program of different main control chips;
3) low in energy consumption;
4) for the low-cost and high-performance of small household appliances scheme provides better IGBT driving solution.
Claims (9)
1. high-power semiconductor switch device drive chip of high-power, it is characterized in that, comprise supply pin (VDD), lower margin (GND), forward input pin (IN+), oppositely input pin (IN-) and driver output pin (OUT), be integrated with MOS in described chip to pipe (1), level selection circuit (3) and DC-DC conversion circuit (4), described DC-DC conversion circuit is connected with supply pin for generation of+5V power supply; Described MOS to be managed by P-MOS pipe and the drain electrode of N-MOS pipe connects forms, and P-MOS pipe source electrode connects supply pin, N-MOS pipe source ground pin, and drain electrode connects described driver output pin; One of described level selection circuit inputs termination forward input pin and connects (8) lower margin by the first resistance, another reverse input pin of input termination also passes through the output that the second resistance (7) connects DC-DC conversion circuit, and the output of level selection circuit connects the grid of MOS to pipe through driver element (2);
Described chip also comprises temperature output pin (Tout), temperature measurement circuit (5) is also integrated with in described chip, described temperature measurement circuit is composed in series by constant current mirror circuit and the first semiconductor PN, powered by described DC-DC conversion circuit, temperature output pin described in the public termination of constant current mirror circuit and the first semiconductor PN, the other end grounding leg of the first semiconductor PN, this temperature measurement circuit for detecting the temperature of this driving chip self, and detects the temperature of high-power semiconductor switch device pin.
2. driving chip according to claim 1, is characterized in that, also connects amplifying circuit between described temperature measurement circuit and described temperature output pin.
3. driving chip according to claim 1, is characterized in that, described level selection circuit be with or door or XOR gate.
4. the driving chip according to claim 1-3 any one; it is characterized in that; protection module (6) is also integrated with in described chip; this protection module is made up of the second PN junction (6a) be connected between the source electrode of described P-MOS pipe and drain electrode and the 3rd PN junction (6b) be connected between the source electrode of described N-MOS pipe and drain electrode; for the protection of the interference-free pulsing effect of high-power semiconductor switch device being connected to driver output pin, and the driving voltage of this driving chip itself is clamped down on zone of reasonableness.
5. driving chip according to claim 4, is characterized in that, described second PN junction and the 3rd PN junction be transformation formation in the structure of described P-MOS pipe and described N-MOS pipe respectively.
6. driving chip according to claim 4, is characterized in that, described MOS matches to the characteristic of the internal resistance of pipe with the IGBT being connected to driver output pin.
7. driving chip according to claim 4, is characterized in that, this chip adopts SOT23-6 encapsulation, and the length of chip is 2.8-3mm, and thickness is 0.9-1.45mm, and the width of chip body is 1.5-1.75mm.
8. the application of driving chip in electromagnetic induction heater described in claim 1-7 any one, for driving IGBT.
9. application according to claim 8, is characterized in that: the lower margin of described driving chip is close to and is connected the E pole of described IGBT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210372933.4A CN102857212B (en) | 2012-09-29 | 2012-09-29 | Universal drive chip of high-power semiconductor switching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210372933.4A CN102857212B (en) | 2012-09-29 | 2012-09-29 | Universal drive chip of high-power semiconductor switching device |
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| CN102857212A CN102857212A (en) | 2013-01-02 |
| CN102857212B true CN102857212B (en) | 2014-12-17 |
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| JP2001240323A (en) * | 2000-02-28 | 2001-09-04 | Mitsubishi Electric Corp | Control device of elevator |
| KR20080064031A (en) * | 2007-01-03 | 2008-07-08 | 삼성전자주식회사 | Image sensor having temperature sensor and driving method thereof |
| CN101393422A (en) * | 2007-09-19 | 2009-03-25 | 佛山市富士宝电器科技有限公司 | Programmable IGBT driving circuit apparatus of electromagnetic stove |
| CN101330779B (en) * | 2008-07-24 | 2011-03-30 | 武汉理工大学 | Electric control device for modularization high-power electromagnetic range and control method |
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Address after: Post office building Baoan District 13 Baomin Shenzhen city Guangdong province 518101 Road 27 layer Applicant after: Xin Huike limited company of Shenzhen Address before: Post office building Baoan District 13 Baomin Shenzhen city Guangdong province 518101 Road 27 layer Applicant before: Shenzhen CHK Electronics Co., Ltd. |
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Address after: 518133 B building, No. 7 down mountain road, Fuyong street, Shenzhen, Guangdong, Baoan District, China Patentee after: Xin Huike limited company of Shenzhen Address before: Post office building Baoan District 13 Baomin Shenzhen city Guangdong province 518101 Road 27 layer Patentee before: Xin Huike limited company of Shenzhen |
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