CN102856261A - Method for preparing metal, ferroelectric substance, insulator and semiconductor structure - Google Patents
Method for preparing metal, ferroelectric substance, insulator and semiconductor structure Download PDFInfo
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- CN102856261A CN102856261A CN2012103301497A CN201210330149A CN102856261A CN 102856261 A CN102856261 A CN 102856261A CN 2012103301497 A CN2012103301497 A CN 2012103301497A CN 201210330149 A CN201210330149 A CN 201210330149A CN 102856261 A CN102856261 A CN 102856261A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 9
- 239000002184 metal Substances 0.000 title claims abstract description 9
- 239000000126 substance Substances 0.000 title claims abstract description 6
- 239000012212 insulator Substances 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000002243 precursor Substances 0.000 claims abstract description 11
- 238000009413 insulation Methods 0.000 claims description 22
- 239000010408 film Substances 0.000 claims description 19
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 18
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 18
- 238000004528 spin coating Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 13
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 12
- 238000010792 warming Methods 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 238000002425 crystallisation Methods 0.000 claims description 6
- 230000008025 crystallization Effects 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 claims description 6
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000013313 FeNO test Methods 0.000 claims description 3
- 238000006701 autoxidation reaction Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 150000001768 cations Chemical class 0.000 claims description 3
- 239000000571 coke Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 3
- 239000006193 liquid solution Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 238000002604 ultrasonography Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000011065 in-situ storage Methods 0.000 abstract description 5
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 abstract description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 abstract description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 150000003839 salts Chemical class 0.000 abstract description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- 229910002902 BiFeO3 Inorganic materials 0.000 abstract 1
- -1 on the one hand Inorganic materials 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 230000005684 electric field Effects 0.000 description 4
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 238000004626 scanning electron microscopy Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 241000220317 Rosa Species 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Abstract
A method for preparing a metal, ferroelectric substance, insulator and semiconductor structure is an in-situ growth technology for a Bi2SiO5 insulating layer in an MFIS (metal, ferroelectric substance, insulator and semiconductor) structure, and is characterized in that Bi2O3 is generated by Bi salt precursor sol in a thermal treatment process owing to volatility of bismuth oxide, on the one hand, BiFeO3 of a ferroelectric layer is reacted with amorphous SiO2 on a Si substrate at a growth temperature to generate an insulating layer, and on the other hand, lost Bi in a ferroelectric layer growth process is supplemented. The method includes seven steps. The method is scientific in conception and simple in process, and has high practical value and a wide application prospect in the technical field of novel microelectronic materials.
Description
Technical field
The present invention relates to the preparation method of a kind of metal-ferroelectric-insulator-semiconductor structure, relate in particular to the preparation method of a kind of metal-ferroelectric of growth in situ insulating barrier-insulator-semiconductor (MFIS) structure, it is a kind of film in-situ growth technology and utilizes this technology to prepare a kind of ferroelectric metal-ferroelectric for non-volatile ferroelectric holder-insulator-semiconductor structure, belongs to the microelectronics new material technology field.
Background technology
Ferroelectric material has spontaneous polarization, has two kinds of polarized states, therefore can be used for area information storage.As a kind of nonvolatile storage, its canned data can not lost because of outage, and ferroelectric memory (Ferroelectric RandomAccess Memory, FeRAM) has good application prospect.Present commercial FeRAM mainly consists of (1T-1C) by a transistor and a ferroelectric condenser, and is multiplex in smart card, mobile communication and personal data storage, as: USB flash disk, personal digital assistant(PDA) etc.But the FeRAM density of data storage is low, and the behaviour that reads of data does and has destructiveness, for improving these shortcomings, has developed field-effect transistor FeRAM(FETFeRAM on the FeRAM basis).FETFeRAM after the improvement has that memory cell is little, low energy consumption, nondestructive reading be according to advantages such as manipulations, but exist ferroelectric thin film and Si substrate having at the interface counterdiffusion, both thermal stress not to mate unfavorable factors such as (thermal coefficient of expansion of Si are generally less than common oxide) in this structure, reduced the performance of FETFeRAM.For overcoming above shortcoming, between ferroelectric layer and semiconductor Si layer, insert one deck insulating material, consist of metal-ferroelectric-insulator-semiconductor structure (Metal Ferroelectric Insulator Semiconductor, MFIS).Insulating barrier act as isolation ferroelectric layer and Si substrate in the MFIS structure, avoids the two at the interface reaction.Therefore require insulating material to have good thermal stability, low-leakage current, higher dielectric constant and can form good interface with Si.The insulating material that is usually used in the MFIS structure has: Y
2O
3, HfO
2, ZrO
2, Al
2O
3, SrTiO
3Deng.The ferroelectric material that consists of the MFIS structure has: (Bi, La)
4Ti
3O
12, SrBi
2Ta
2O
9, SrBi
2Nb
2O
9Deng the Bi laminated perovskite structure, because they have good ferroelectric properties and fatigue durability is good, confining force is long, very potential in the FETFeRAM field.
BiFeO
3As a kind of lead-free ferroelectric material with fine iron electrical property that rose in recent years, the remanent polarization (P of its film
r) up to ~ 100 μ C/cm
2, be expected to substitute conventional iron electric material Pb (Zi
xTi
1-x) O
3At present, with BiFeO
3The research that is applied to the FETFeRAM field is also fewer, and the structure that has been reported has: BiFeO
3/ SrTiO
3/ GaN, BiFeO
3/ ZrO
2/ Si and BiFeO
3/ Bi
2Ti
2O
7/ Si.Capacitance-voltage (C-V) curve is that the important electrical property of MFIS structure characterizes, because the polarization of ferroelectric material upset causes that obvious hysteretic characteristics appears in the C-V curve in the MFIS structure, and " Memory windows " (memory window, V commonly used
m) estimate the performance of MFIS structure; V
mSize be back and forth two C-V curves at the width of overlapping position not, Memory windows equals 2V in theory
c(V
c: the ferroelectric thin film coercive voltage).But these MFIS Memory windows values of report are larger from the theoretical value gap at present, and topmost reason comes from the charge injection in semiconductor Si or the metal electrode.Improve two interfaces of ferroelectric/insulating barrier and insulating barrier/Si in conjunction with being the effective way that reduces Si charge injection raising MFIS performance for this reason.Seeking suitable intermediate insulation layer material is the key that realizes MFIS well-formed's performance.Consider Bi
2SiO
5Be Bi-O and Si-O layer structure, dielectric constant has good thermal stability about 30, and leakage current is little.The more important thing is Bi
2SiO
5(100) face and Si(100) the face mismatch is ~ 0.5%, can form good interface with Si; And studies show that, at Bi
2SiO
5/ Si at the interface electric charge injection and catch seldom, therefore select Bi
2SiO
5As based on BiFeO
3The insulating barrier of the MFIS structure of ferroelectric thin film makes up Pt/BiFeO
3/ Bi
2SiO
5/ Si ferroelectric memory.
Summary of the invention
The invention provides the preparation method of a kind of metal-ferroelectric-insulator-semiconductor structure, it is Bi in a kind of MFIS structure
2SiO
5The in-situ growth technology of insulating barrier is characterized in that: utilize the bismuth oxide effumability, generate Bi by Bi salt precursor body colloidal sol in heat treatment process
2O
3, at ferroelectric layer BiFeO
3Under the growth temperature on the one hand with the Si substrate on amorphous SiO
2Reaction generates insulating barrier, replenishes on the other hand simultaneously the Bi that lacks in the ferroelectric layer growth course.
The present invention be on the other hand made up a kind of based on BiFeO
3The MFIS structure of ferroelectric thin film is characterized by the Pt/BiFeO that is grown on the single crystalline Si
3/ Bi
2SiO
5Multilayer film has more excellent performance, and Memory windows can reach 3.5 volts.
The preparation method of a kind of metal-ferroelectric of the present invention-insulator-semiconductor structure, the method concrete steps are as follows:
Step 1: Bi oxide precursor colloidal sol is by bismuth nitrate (Bi (NO
3)
36H
2O) with citric acid in molar ratio 1:1.5 be dissolved in the ethylene glycol monoemethyl ether, the gained solution concentration is 0.15mol/L.
Step 2: BiFeO
3The precursor sol liquid solution is by bismuth nitrate (Bi (NO
3)
36H
2O), ferric nitrate ((FeNO
3)
36H
2O) be dissolved in the ethylene glycol monoemethyl ether by cation mol ratio 1:1.5 with citric acid, the gained solution concentration is 0.2mol/L, leaves standstill after stirring 24 hours.
Step 3: the Si substrate adopts deionized water, absolute ethyl alcohol and deionized water to clean in ultrasound environments successively 10 minutes, places afterwards rapid heat-treatment furnace to be warming up to rapidly 500 ° of C insulations and is cooled to room temperature after 5 minutes.
Step 4: the Si substrate after will processing places on the sol evenning machine, spin coating one deck Bi oxide precursor colloidal sol, rotating speed 3000rpm, 30 seconds spin coating time, after the film forming institute's film forming is dried half an hour under 80 ° of C, put into rapid heat-treatment furnace, be warming up to rapidly 200 ° of C insulations 5 minutes, and then be rapidly heated to 400 ° of C insulations 5 minutes, obtain after the cooling by the thin Bi of one deck
2O
3The Si substrate that covers.
Step 5: at Bi
2O
3Spin coating BiFeO on the substrate that covers
3Colloidal sol, rotating speed 4000rpm, 30 seconds spin coating time, film forming becomes wet film to dry half an hour under 80 ° of C institute, puts into rapid heat-treatment furnace and carries out organic substance decomposing coke discharging heat treatment: be warming up to rapidly 200 ° of C insulations 5 minutes, and then be rapidly heated to 400 ° of C insulations 5 minutes, repeat above technique after the cooling, by control spin coating number of times, obtain the amorphous thin film of predetermined thickness.
Step 6: the BiFeO of last spin coating
3Film is warming up to rapidly 625 ° of C insulations of crystallization temperature 5 minutes 400 ° of C insulations after 5 minutes, so that BiFeO
3In the time of thin film crystallization, Bi
2O
3Unformed SiO with the autoxidation formation of Si surface
2The reaction original position generates Bi
2SiO
5, obtain BiFeO
3/ Bi
2SiO
5/ Si structure.
Step 7: sputtering electrode material---metal platinum electrode 104 namely consists of based on BiFeO
3The MFIS structure as shown in Figure 1 of ferroelectric thin film.
Advantage and effect: the present invention compared with the prior art, its major advantage is: processing step is easy, take full advantage of Bi based compound characteristics, generate simultaneously insulating barrier and ferroelectric layer in the MFIS structure, gained MFIS structural behaviour is excellent, and the key technical indexes Memory windows value can reach 3.5V when electric field strength 35kV/mm.
Description of drawings:
Fig. 1: MFIS structural representation of the present invention
101-semiconductor Si substrate, the intermediate insulating layer of 102-growth in situ, 103-multiferroic film, 104-metal platinum electrode
Fig. 2: many iron property (BFO) in the MFIS structure of the present invention/insulator (BSO)/semiconductor Si is high resolution transmission electron microscopy (HRTEM) figure at the interface
Fig. 3: the X-ray energy spectrum (EDX) of scanning along the line in the zone shown in MFIS structure scanning electron microscopy of the present invention (SEM) figure and the purple line
Fig. 4: the capacitance-voltage of MFIS structure of the present invention (C-V) curve under the different voltage conditions
Fig. 5: be FB(flow block) of the present invention.
Embodiment:
See Fig. 5, the preparation method of a kind of metal-ferroelectric of the present invention-insulator-semiconductor (MFIS) structure, the method concrete steps are as follows:
Step 1: Bi oxide precursor colloidal sol is by bismuth nitrate (Bi (NO
3)
36H
2O) with citric acid in molar ratio 1:1.5 be dissolved in the ethylene glycol monoemethyl ether, the gained solution concentration is 0.15mol/L.
Step 2: BiFeO
3The precursor sol liquid solution is by bismuth nitrate (Bi (NO
3)
36H
2O), ferric nitrate ((FeNO
3)
36H
2O) be dissolved in the ethylene glycol monoemethyl ether by cation mol ratio 1:1.5 with citric acid, the gained solution concentration is 0.2mol/L, leaves standstill after stirring 24 hours.
Step 3: the Si substrate adopts deionized water, absolute ethyl alcohol and deionized water to clean in ultrasound environments successively 10 minutes, places afterwards rapid heat-treatment furnace to be warming up to rapidly 500 ° of C insulations and is cooled to room temperature after 5 minutes.
Step 4: the Si substrate after will processing places on the sol evenning machine, spin coating one deck Bi oxide precursor colloidal sol, rotating speed 3000rpm, 30 seconds spin coating time, after the film forming institute's film forming is dried half an hour under 80 ° of C, put into rapid heat-treatment furnace, be warming up to rapidly 200 ° of C insulations 5 minutes, and then be rapidly heated to 400 ° of C insulations 5 minutes, obtain after the cooling by the thin Bi of one deck
2O
3The Si substrate that covers;
Step 5: at Bi
2O
3Spin coating BiFeO on the substrate that covers
3Colloidal sol, rotating speed 4000rpm, 30 seconds spin coating time, film forming becomes wet film to dry half an hour under 80 ° of C institute, puts into rapid heat-treatment furnace and carries out organic substance decomposing coke discharging heat treatment: be warming up to rapidly 200 ° of C insulations 5 minutes, and then be rapidly heated to 400 ° of C insulations 5 minutes, repeat above technique after the cooling, by control spin coating number of times, obtain the amorphous thin film of predetermined thickness.
Step 6: the BiFeO of last spin coating
3Film is warming up to rapidly 625 ° of C insulations of crystallization temperature 5 minutes 400 ° of C insulations after 5 minutes, so that BiFeO
3In the time of thin film crystallization, Bi
2O
3Unformed SiO with the autoxidation formation of Si surface
2The reaction original position generates Bi
2SiO
5, obtain BiFeO
3/ Bi
2SiO
5/ Si structure.
Step 7: sputtering electrode material---metal platinum electrode 104 namely consists of based on BiFeO
3The MFIS structure as shown in Figure 1 of ferroelectric thin film.
Between top electrode and bottom electrode, apply from negative electricity and be pressed onto positive voltage, reduce conversion electric field strength to negative voltage from positive voltage again, record the capacitance variations curve of this MFIS structure as shown in Figure 4.When maximum electric field intensity was 25kV/mm, the Memory windows value reached 2 volts.Rising electric field strength is during to 35kV/mm, and the Memory windows value increases to 3.5 volts.
Fig. 2 is at the interface high resolution transmission electron microscopy (HRTEM) figure of many iron property (BFO) in the MFIS structure of the present invention/insulator (BSO)/semiconductor Si; Fig. 3 is the X-ray energy spectrum (EDX) that scans along the line in the zone shown in MFIS structure scanning electron microscopy of the present invention (SEM) figure and the purple line; Fig. 4 is capacitance-voltage (C-V) curve synoptic diagram of MFIS structure of the present invention under the different voltage conditions.
Claims (1)
1. the preparation method of metal-ferroelectric-insulator-semiconductor structure, it is characterized in that: the method concrete steps are as follows:
Step 1: Bi oxide precursor colloidal sol is by bismuth nitrate (Bi (NO
3)
36H
2O) with citric acid in molar ratio 1:1.5 be dissolved in the ethylene glycol monoemethyl ether, the gained solution concentration is 0.15mol/L;
Step 2: BiFeO
3The precursor sol liquid solution is by bismuth nitrate (Bi (NO
3)
36H
2O), ferric nitrate ((FeNO
3)
36H
2O) be dissolved in the ethylene glycol monoemethyl ether by cation mol ratio 1:1.5 with citric acid, the gained solution concentration is 0.2mol/L, leaves standstill after stirring 24 hours;
Step 3: the Si substrate adopts deionized water, absolute ethyl alcohol and deionized water to clean in ultrasound environments successively 10 minutes, places afterwards rapid heat-treatment furnace to be warming up to rapidly 500 ° of C insulations and is cooled to room temperature after 5 minutes;
Step 4: the Si substrate after will processing places on the sol evenning machine, spin coating one deck Bi oxide precursor colloidal sol, rotating speed 3000rpm, 30 seconds spin coating time, after the film forming institute's film forming is dried half an hour under 80 ° of C, put into rapid heat-treatment furnace, be warming up to rapidly 200 ° of C insulations 5 minutes, and then be rapidly heated to 400 ° of C insulations 5 minutes, obtain after the cooling by the thin Bi of one deck
2O
3The Si substrate that covers;
Step 5: at Bi
2O
3Spin coating BiFeO on the substrate that covers
3Colloidal sol, rotating speed 4000rpm, 30 seconds spin coating time, film forming becomes wet film to dry half an hour under 80 ° of C institute, puts into rapid heat-treatment furnace and carries out organic substance decomposing coke discharging heat treatment: be warming up to rapidly 200 ° of C insulations 5 minutes, and then be rapidly heated to 400 ° of C insulations 5 minutes, repeat above technique after the cooling, by control spin coating number of times, obtain the amorphous thin film of predetermined thickness;
Step 6: the BiFeO of last spin coating
3Film is warming up to rapidly 625 ° of C insulations of crystallization temperature 5 minutes 400 ° of C insulations after 5 minutes, so that BiFeO
3In the time of thin film crystallization, Bi
2O
3Unformed SiO with the autoxidation formation of Si surface
2The reaction original position generates Bi
2SiO
5, obtain BiFeO
3/ Bi
2SiO
5/ Si structure;
Step 7: sputtering electrode material---the metal platinum electrode namely consists of based on BiFeO
3The MFIS structure of ferroelectric thin film.
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|---|---|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103771532A (en) * | 2014-03-04 | 2014-05-07 | 西北大学 | Preparation method of BiFeO3 material, BiFeO3/TiO2 composite film and application thereof |
| CN103839946A (en) * | 2014-03-10 | 2014-06-04 | 中国科学院半导体研究所 | MFIS structure based on tetragonal phase bismuth ferrite and preparation method thereof |
| CN105788864A (en) * | 2016-02-29 | 2016-07-20 | 湘潭大学 | Method for improving negative capacitance of PZT ferroelectric thin film |
| CN110451810A (en) * | 2019-09-20 | 2019-11-15 | 陕西科技大学 | A kind of CuO doping Bi2SiO5The preparation method of polycrystalline glass |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030224537A1 (en) * | 2002-05-28 | 2003-12-04 | National Chiao Tung University | Ferroelectric thin film processing for ferroelectric field-effect transistor |
| CN101050120A (en) * | 2007-05-11 | 2007-10-10 | 清华大学 | Method for preparing bismuth ferrite based multifunctioanl oxide ceramic material |
-
2012
- 2012-09-07 CN CN201210330149.7A patent/CN102856261B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030224537A1 (en) * | 2002-05-28 | 2003-12-04 | National Chiao Tung University | Ferroelectric thin film processing for ferroelectric field-effect transistor |
| CN101050120A (en) * | 2007-05-11 | 2007-10-10 | 清华大学 | Method for preparing bismuth ferrite based multifunctioanl oxide ceramic material |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103771532A (en) * | 2014-03-04 | 2014-05-07 | 西北大学 | Preparation method of BiFeO3 material, BiFeO3/TiO2 composite film and application thereof |
| CN103771532B (en) * | 2014-03-04 | 2016-02-10 | 西北大学 | BiFeO 3the preparation method of material, BiFeO 3/ TiO 2the application of laminated film and this laminated film |
| CN103839946A (en) * | 2014-03-10 | 2014-06-04 | 中国科学院半导体研究所 | MFIS structure based on tetragonal phase bismuth ferrite and preparation method thereof |
| CN103839946B (en) * | 2014-03-10 | 2016-09-14 | 中国科学院半导体研究所 | MFIS structure based on Tetragonal bismuth ferrite and preparation method |
| CN105788864A (en) * | 2016-02-29 | 2016-07-20 | 湘潭大学 | Method for improving negative capacitance of PZT ferroelectric thin film |
| CN105788864B (en) * | 2016-02-29 | 2017-12-08 | 湘潭大学 | A kind of method of raising PZT ferroelectric thin film negative capacitances |
| CN110451810A (en) * | 2019-09-20 | 2019-11-15 | 陕西科技大学 | A kind of CuO doping Bi2SiO5The preparation method of polycrystalline glass |
| CN110451810B (en) * | 2019-09-20 | 2021-08-03 | 陕西科技大学 | CuO doped Bi2SiO5Method for producing polycrystalline glass |
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|---|---|
| CN102856261B (en) | 2014-08-20 |
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