CN102851653A - Large area film deposition apparatus - Google Patents
Large area film deposition apparatus Download PDFInfo
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- CN102851653A CN102851653A CN2012103306645A CN201210330664A CN102851653A CN 102851653 A CN102851653 A CN 102851653A CN 2012103306645 A CN2012103306645 A CN 2012103306645A CN 201210330664 A CN201210330664 A CN 201210330664A CN 102851653 A CN102851653 A CN 102851653A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The present invention discloses a large area film deposition apparatus, which comprises a cavity, an excitation electrode plate, a grounding electrode plate, a radio frequency power supply, a gas intake pipeline, and a gas discharge valve, wherein the excitation electrode plate and the grounding electrode plate are arranged inside the cavity in a parallel manner, a base plate is positioned on the surface of the grounding electrode plate, and the excitation electrode plate surface facing the grounding electrode plate is a curved surface having a Gaussian distribution shape. With the large area film deposition apparatus of the present invention, uniformity of the rapidly deposited large area microcrystalline silicon film can be improved.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly a kind of large area film depositing device.
Background technology
The microcrystalline silicon film battery does not have the photo attenuation effect of amorphous silicon film battery, and with respect to amorphous silicon film battery, the microcrystalline silicon film battery has higher battery conversion efficiency.The microcrystalline silicon film battery has very little optical band gap (1.1eV), as the end battery of film binode laminated cell or three knot laminated cells, can improve significantly the efficiency of conversion of hull cell.Efficient such as the unijunction amorphous silicon film battery is 7-8%, and can reach 9-10% with microcrystal silicon as the efficiency of conversion of the non-crystalline silicon of end battery/microcrystal silicon binode laminated cell, then can bring up to 11-12% as the efficiency of conversion of the non-crystalline silicon/amorphous silicon germanium of three knots/crystalline/micro-crystalline silicon laminated batteries.
Yet microcrystalline silicon film is the same with crystalline silicon, all is the semiconductor material that belongs to indirect band gap, and uptake factor is lower than amorphous silicon membrane, therefore in order to realize the fully absorption to sunlight, needs the microcrystal silicon rete of preparation thinner thickness.In the middle of the deposition technique of microcrystalline silicon film, even adopt present optimized light trapping technology, the thickness of microcrystal silicon rete is also at 1um in the actual preparation.This has increased the time of preparation greatly on producing, limited the reduction of production-scale raising and cost.Therefore, how improving the sedimentation rate of microcrystalline silicon film battery, shorten process and the time of deposition, is the prerequisite that large-scale low-cost is produced.
At present, the preparation method of high speed deposition microcrystalline film commonly used mainly is that using plasma strengthens the chemical vapor deposition method under the condition of superpower and high pressure.The raising of this preparation method's sedimentation rate is limited on the one hand, and large-scale production is generally 0.5nm/s; On the other hand, high deposition pressure has increased the probability of the gas-phase reaction of gas, easily forms the particle of polymkeric substance, causes the ununiformity of thin film deposition.Simultaneously, higher deposition power has increased the arc voltage of plasma body, thereby makes near the acceleration of ions the pole plate bombard the rete that has deposited, and has increased the defective of rete.Very high frequency plasma strengthens chemical Vapor deposition process, can further improve the sedimentation rate of microcrystalline silicon film, simultaneously can reduce energetic ion to the destruction of the bombardment of film surface, this is because high deposition frequency has increased the density of electronics, has reduced simultaneously the energy of ion.But, because along with the rising of deposition frequency and the increase of electrode size, the generation meeting of standing wave effect reduces the homogeneity that battery lead plate voltage distributes greatly, thereby reduce the homogeneity of microcrystalline silicon film deposition.
In the edge of substrate, because the voltage distribution is discontinuous, reduced electrode voltage in addition, made the relative substrate of the rete mid-way attenuation of deposition.And around negative electrode, because inwall and the negative electrode of chamber or box body are more approaching, and gas is mobile relatively slow at the inwall place of chamber, so this regional gaseous dissociation rate is larger, can cause the rete that deposits thicker.The problem of above present existence has all proposed challenge to the homogeneity of high speed deposition micro crystal silicon film.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of large area film depositing device, can improve the homogeneity of fast deposition big area microcrystalline silicon film.
For achieving the above object, a kind of large area film depositing device provided by the invention, the excitation electric pole plate and grounding electrode plate, radio-frequency power supply, admission passage and the drain tap that comprise the parallel placement of cavity and inside cavity, substrate is positioned at the grounding electrode plate surface, and described excitation electric pole plate is the curved surface with Gaussian-shaped towards the surface of grounding electrode plate.
The feed-in mode of described radio-frequency power supply is the central position single-point feed-in on described excitation electric pole plate.
Position single-point grounding centered by the earthing mode of described grounding electrode plate.
The curved surface string place of described excitation electric pole plate has Dielectric slab.
The lamellate aluminium frame of tool around the described substrate.
The layer of dielectric material such as the lamellate PET of tool around the described substrate covers the edge surface of substrate.
The distance of described grounding electrode plate and cavity inner wall is greater than 10cm.
Have on the described Dielectric slab and optimize the pore that distributes.
Described equipment also comprises the venting hole grid that are connected in excitation electric pole plate and grounding electrode plate both sides of the edge.
Advantage of the present invention:
Large area film depositing device of the present invention, electrode structural designs, reactant gases air inlet and exhaust mode design and the feed-in of power supply and earthing mode design etc. by optimizing, can make large-sized microcrystalline silicon film of 1.4m2, in the situation that sedimentation rate is 0.5nm/s, homogeneity remains in 15%, has greatly improved the homogeneity of high speed deposition micro crystal silicon film.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Deliberately do not draw in proportion accompanying drawing, focus on illustrating purport of the present invention.
Fig. 1 is existing large area film depositing device structural representation;
Fig. 2 is the large area film depositing device structural representation of the preferred embodiment according to the present invention.
Described diagram is illustrative and nonrestrictive, can not excessively limit protection scope of the present invention at this.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention.Therefore the present invention is not subjected to the restriction of following public implementation.
Fig. 1 is existing large area film depositing device structural representation.As shown in Figure 1, battery lead plate 11 and 12 is plate electrode, and 13 squares of glass substrates are on battery lead plate 12 surfaces.On battery lead plate 11, equidistantly access 4 electrode load points 15 by RF power supply 14.Battery lead plate 12 adopts both sides balanced to ground 16, and cavity carries out copper strips ground connection 17.Reactant gases is entered by cavity left side 18, is discharged by right side 19.This device structure, its problem are battery lead plate 11 voltage skewness, and the structure design of a plurality of power supply load points 15 can increase the complicacy that battery lead plate 11 voltages distribute simultaneously; Edge's voltage of glass substrate 13 distributes and is reduced to the edge by glass substrate 13; The voltage inequality that this structure design causes causes the inhomogeneous of film forming.Equally, the structure of existing parallel glass substrate 13 one-sided air inlets 18 and one-sided exhaust 19 causes the inhomogeneous of gas distribution, thereby produces the inhomogeneous of plated film.The corner location 10 of chamber also can dust often occur, affects the homogeneity of film forming.
Large area film depositing device of the present invention, the excitation electric pole plate and grounding electrode plate, radio-frequency power supply, admission passage and the drain tap that comprise the parallel placement of cavity and inside cavity, substrate is positioned at the grounding electrode plate surface, and described excitation electric pole plate is the curved surface with Gaussian-shaped towards the surface of grounding electrode plate.Fig. 2 is the large area film depositing device structural representation of the preferred embodiment according to the present invention.As shown in Figure 2, large area film depositing device of the present invention, comprise excitation electric pole plate 21 and grounding electrode plate 22, the mode of the feed-in of RF power supply 24 is chosen in the central position 35 single-point feed-ins above the excitation electric pole plate 21, can obtain like this homogeneity that best electrode plate surface voltage distributes.But in the very high frequency plasma enhanced chemical vapor deposition of high speed deposition micro crystal silicon hull cell, because frequency increases the standing wave effect that causes, make the distribution of the surface voltage of common plate shaped excitation electric pole plate present ununiformity, reduced gradually to the edge by middle load point position, especially the edge center position of battery lead plate long side direction, voltage drop is the most obvious.Therefore, the excitation electric pole plate 21 of large area film depositing device of the present invention is the curved surfaces 211 with Gaussian-shaped with respect to the surface of grounding electrode plate 22.A Dielectric slab 26 is installed at curved surface 211 string places at excitation electric pole plate 21.Such structure can eliminate in the plate electrode by the skewness of central position to the edge voltage drop.The grounding electrode plate 22 of bearing substrate 23 is also adopted mode in 25 single-point groundings of battery lead plate central position, be equipped with the integral ground 27 of reaction chamber, and ground connection is all adopted wide copper strips ground connection.By guaranteeing the homogeneity that very high frequency(VHF) hypocoxa 23 medium voltages distribute to the improved shape of excitation electric pole plate 21 and the improvement of radio frequency feed-in and grounding electrode plate 22 earthing modes.
Since substrate 23 and the discontinuity of grounding electrode plate 22 in edge, and chamber inner wall corner gas flow is relatively relatively poor, so that the uniformity of film of substrate 23 edges is relatively poor, usually in edge 10cm-15cm scope.Substrate 23 and grounding electrode plate 22 are discontinuous edge, can cause that voltage descends at the substrate edges place, so that the gradually attenuation of the film of marginal deposit.Therefore the present invention eliminates the voltage drop that the sudden change of this edge causes by add the aluminium frame 28 of skim around substrate 23.
Chamber inner wall corner flow rate of gas is relatively slow, and the probability of the gas-phase reaction of the gas that this is regional is large, therefore easily forms superpolymer, produces powder, and the formation of these powder can affect the distribution of edge voltage.Therefore the present invention covers the edge surface of substrate 23 by add the layer of dielectric material such as PET 29 of thin layer around substrate 23.Make simultaneously the distance of grounding electrode plate 22 and cavity inner wall greater than 10cm, can reduce the formation of substrate 23 edge powder.
Reactant gases enters reaction chamber through admission passage 30 by the pore 36 that the optimization on the medium layer 26 of excitation electric pole plate 21 distributes, the simultaneously discharging of tail gas is bled simultaneously by the valve 23 in the chamber both sides, with the homogeneity of realization response gas distribution, improve the homogeneity of thin film deposition.In addition, the venting hole grid 32 that are connected in excitation electric pole plate 21 and grounding electrode plate 22 both sides of the edge can prevent that plasma from revealing to the outside of electrode edge, eliminate the ununiformity of edge plated film.
After above scrap build was finished, the high speed deposition micro crystal silicon film adopted high deposition pressure and little interelectrode distance, cooperating the very high frequency(VHF) deposition, can when improve film deposition rate, reduce the formation of powder, and obtain uniform high performance microcrystalline silicon film material.0.5nm/s the substrate area of deposition is 1.4m
2The homogeneity of large-sized microcrystalline silicon film in 15%.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Any those of ordinary skill in the art, do not breaking away from the technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the protection domain of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment does according to technical spirit of the present invention.
Claims (9)
1. large area film depositing device, the excitation electric pole plate and grounding electrode plate, radio-frequency power supply, admission passage and the drain tap that comprise the parallel placement of cavity and inside cavity, substrate is positioned at the grounding electrode plate surface, it is characterized in that: described excitation electric pole plate is the curved surface with Gaussian-shaped towards the surface of grounding electrode plate.
2. large area film depositing device according to claim 1 is characterized in that: the feed-in mode of described radio-frequency power supply is the central position single-point feed-in on described excitation electric pole plate.
3. large area film depositing device according to claim 1 is characterized in that: position single-point grounding centered by the earthing mode of described grounding electrode plate.
4. large area film depositing device according to claim 1, it is characterized in that: the curved surface string place of described excitation electric pole plate has Dielectric slab.
5. large area film depositing device according to claim 1 is characterized in that: the lamellate aluminium frame of tool around the described substrate.
6. large area film depositing device according to claim 1 is characterized in that: the layer of dielectric material such as the lamellate PET of tool around the described substrate covers the edge surface of substrate.
7. large area film depositing device according to claim 1, it is characterized in that: the distance of described grounding electrode plate and cavity inner wall is greater than 10cm.
8. large area film depositing device according to claim 4 is characterized in that: have on the described Dielectric slab and optimize the pore that distributes.
9. large area film depositing device according to claim 1, it is characterized in that: described equipment also comprises the venting hole grid that are connected in excitation electric pole plate and grounding electrode plate both sides of the edge.
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| CN2012103306645A CN102851653A (en) | 2012-09-10 | 2012-09-10 | Large area film deposition apparatus |
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| CN2012103306645A CN102851653A (en) | 2012-09-10 | 2012-09-10 | Large area film deposition apparatus |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103458599A (en) * | 2013-09-24 | 2013-12-18 | 南方科技大学 | Low-temperature plasma processing device and method |
| CN115869651A (en) * | 2023-02-13 | 2023-03-31 | 西北农林科技大学 | Solid-liquid extraction system based on radio frequency waves |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW478296B (en) * | 1999-08-10 | 2002-03-01 | Unaxis Trading Ltd | Plasma-reactor to process some substrates with large areas and method to process at least one substrate in a high-frequency plasma-reactor |
| CN1879189A (en) * | 2003-09-10 | 2006-12-13 | 尤纳克西斯巴尔策斯公司 | Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates |
| US20120048197A1 (en) * | 2010-08-31 | 2012-03-01 | Fujifilm Corporation | Film deposition device |
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- 2012-09-10 CN CN2012103306645A patent/CN102851653A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW478296B (en) * | 1999-08-10 | 2002-03-01 | Unaxis Trading Ltd | Plasma-reactor to process some substrates with large areas and method to process at least one substrate in a high-frequency plasma-reactor |
| CN1879189A (en) * | 2003-09-10 | 2006-12-13 | 尤纳克西斯巴尔策斯公司 | Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates |
| US20120048197A1 (en) * | 2010-08-31 | 2012-03-01 | Fujifilm Corporation | Film deposition device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103458599A (en) * | 2013-09-24 | 2013-12-18 | 南方科技大学 | Low-temperature plasma processing device and method |
| CN115869651A (en) * | 2023-02-13 | 2023-03-31 | 西北农林科技大学 | Solid-liquid extraction system based on radio frequency waves |
| CN115869651B (en) * | 2023-02-13 | 2024-05-03 | 西北农林科技大学 | Solid-liquid extraction system based on radio frequency waves |
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Application publication date: 20130102 |