CN102832324A - 一种大功率led封装结构 - Google Patents

一种大功率led封装结构 Download PDF

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CN102832324A
CN102832324A CN2012103229850A CN201210322985A CN102832324A CN 102832324 A CN102832324 A CN 102832324A CN 2012103229850 A CN2012103229850 A CN 2012103229850A CN 201210322985 A CN201210322985 A CN 201210322985A CN 102832324 A CN102832324 A CN 102832324A
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Prior art keywords
layer
electrode layer
power led
bonding gold
lower electrode
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CN2012103229850A
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刘淑娟
何雷
张佃环
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JIANGSU SUNLIGHT PHOTOELECTRIC CO Ltd
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JIANGSU SUNLIGHT PHOTOELECTRIC CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

一种大功率LED封装结构，该封装结构包括铜制或铝制的散热器，散热器上外侧固定设有引线电极支架，散热器上中部通过焊料层焊接设有硅基层，硅基层上设有下电极层，下电极层上设有若干键合金球，各键合金球上部通过铟焊料层与上电极层连接，上电极层上依次设有LED外延层和蓝宝石衬底层；所述的键合金球、铟焊料层等周围均将覆设有荧光粉保护层，引线电极支架通过铝制键合丝与下电极层连接导通；各部件均通过透光性硅胶材料层封装在散热器上，在透光性硅胶材料层上方设有固定在引线电极支架上的树脂透镜。本发明结构设计合理，封装过程可操作性强，封装效果好，可以有效地提高大功率LED发光效率，保证并延长大功率LED的使用寿命。

Description

一种大功率LED封装结构
技术领域
本发明涉及一种LED，特别是一种大功率LED封装结构。
背景技术
大功率LED生产过程中，在大功率LED的半导体芯片做好后，为了使半导体芯片免受机械应力、热应力、有害气体以及放射线等外部环境的影响，需要对半导体芯片进行封装和保护处理。封装后一方面可以保证半导体器件最大限度的发挥它的电学特性而正常工作，提高其使用寿命，另一方面通过封装也将会使应用更加方便。
随着大功率LED的进一步推广运用，用户对大功率LED的可靠性要求越来越高，不适当的封装结构会降低LED生产的成品率，缩短大功率LED的使用寿命，降低企业的生产效率，提高产品的生产成本，因此，研发更为完善先进的LED封装结构具有重要的现实意义。
发明内容
本发明所要解决的技术问题是针对现有技术的不足，提供一种封装结构设计更为合理、封装操作方便、封装效果好的一种大功率LED封装结构。
本发明所要解决的技术问题是通过以下的技术方案来实现的。本发明是一种大功率LED封装结构，其特点是：该封装结构包括铜制或铝制的散热器，散热器上外侧固定设有引线电极支架，散热器上中部通过焊料层焊接设有硅基层，硅基层上设有下电极层，下电极层上设有若干键合金球，各键合金球上部通过铟焊料层与上电极层连接，上电极层上依次设有LED外延层和蓝宝石衬底层；所述的键合金球、铟焊料层、上电极层、LED外延层和蓝宝石衬底层的周围均将覆设有荧光粉保护层，引线电极支架通过铝制键合丝与下电极层连接导通；所述的下电极层、键合金球、铟焊料层、上电极层、LED外延层和蓝宝石衬底层以及荧光粉保护层均通过透光性硅胶材料层封装在散热器上，在透光性硅胶材料层上方设有固定在引线电极支架上的树脂透镜。
本发明所述的一种大功率LED封装结构技术方案中：所述的键合金球的优选直径为50-110μm，硅基层的厚度优选为220-300μm；铟焊料层的厚度优选为20-50μm。
与现有技术相比，本发明大功率LED封装结构设计合理，封装过程可操作性强，封装效果好，可以有效地提高大功率LED发光效率，保证并延长大功率LED的使用寿命。
附图说明
图1为本发明的一种结构示意图。
具体实施方式
以下参照附图，进一步描述本发明的具体技术方案，以便于本领域的技术人员进一步地理解本发明，而不构成对其权利的限制。
实施例1，参照图1，一种大功率LED封装结构，该封装结构包括铜制或铝制的散热器1，散热器1上外侧固定设有引线电极支架2，散热器2上中部通过焊料层13焊接设有硅基层12，硅基层12上设有下电极层11，下电极层11上设有若干键合金球4，各键合金球4上部通过铟焊料层14与上电极层10连接，上电极层10上依次设有LED外延层8和蓝宝石衬底层7；所述的键合金球4、铟焊料层14、上电极层10、LED外延层8和蓝宝石衬底层7的周围均将覆设有荧光粉保护层9，引线电极支架2通过铝制键合丝3与下电极层11连接导通；所述的下电极层11、键合金球4、铟焊料层14、上电极层10、LED外延层8和蓝宝石衬底层7以及荧光粉保护层9均通过透光性硅胶材料层5封装在散热器1上，在透光性硅胶材料层5上方设有固定在引线电极支架2上的树脂透镜6。
实施例2，实施例1所述的一种大功率LED封装结构中：所述的键合金球4的直径为50μm，硅基层12的厚度为220μm；铟焊料层14的厚度为20μm。
实施例3，实施例1所述的一种大功率LED封装结构中：所述的键合金球4的直径为110μm，硅基层12的厚度为300μm；铟焊料层14的厚度为50μm。
实施例4，实施例1所述的一种大功率LED封装结构中：所述的键合金球4的直径为100μm，硅基层12的厚度为260μm；铟焊料层14的厚度为35μm。

Claims (2)

1.一种大功率LED封装结构，其特征在于：该封装结构包括铜制或铝制的散热器，散热器上外侧固定设有引线电极支架，散热器上中部通过焊料层焊接设有硅基层，硅基层上设有下电极层，下电极层上设有若干键合金球，各键合金球上部通过铟焊料层与上电极层连接，上电极层上依次设有LED外延层和蓝宝石衬底层；所述的键合金球、铟焊料层、上电极层、LED外延层和蓝宝石衬底层的周围均将覆设有荧光粉保护层，引线电极支架通过铝制键合丝与下电极层连接导通；所述的下电极层、键合金球、铟焊料层、上电极层、LED外延层和蓝宝石衬底层以及荧光粉保护层均通过透光性硅胶材料层封装在散热器上，在透光性硅胶材料层上方设有固定在引线电极支架上的树脂透镜。
2.根据权利要求1所述的一种大功率LED封装结构，其特征在于：所述的键合金球的直径为50-110μm，硅基层的厚度为220-300μm；铟焊料层的厚度为20-50μm。
CN2012103229850A 2012-09-04 2012-09-04 一种大功率led封装结构 Pending CN102832324A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104037301B (zh) * 2014-05-19 2017-06-30 伊韦尔(深圳)光电科技有限公司 一种LED灯板的cob封装方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101702424A (zh) * 2009-10-23 2010-05-05 广东昭信光电科技有限公司 一种集成配光和散热功能的led封装结构
CN201829537U (zh) * 2010-10-25 2011-05-11 浙江创盈光电有限公司 新型集成led结构
US20110220954A1 (en) * 2010-03-12 2011-09-15 Panasonic Corporation Optical semiconductor package and optical semiconductor device
CN102437266A (zh) * 2010-09-29 2012-05-02 王树生 Led封装结构
CN202855795U (zh) * 2012-09-04 2013-04-03 江苏尚明光电有限公司 大功率led封装结构

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101702424A (zh) * 2009-10-23 2010-05-05 广东昭信光电科技有限公司 一种集成配光和散热功能的led封装结构
US20110220954A1 (en) * 2010-03-12 2011-09-15 Panasonic Corporation Optical semiconductor package and optical semiconductor device
CN102437266A (zh) * 2010-09-29 2012-05-02 王树生 Led封装结构
CN201829537U (zh) * 2010-10-25 2011-05-11 浙江创盈光电有限公司 新型集成led结构
CN202855795U (zh) * 2012-09-04 2013-04-03 江苏尚明光电有限公司 大功率led封装结构

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104037301B (zh) * 2014-05-19 2017-06-30 伊韦尔(深圳)光电科技有限公司 一种LED灯板的cob封装方法

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Application publication date: 20121219