CN102832163B - The method forming opening - Google Patents
The method forming opening Download PDFInfo
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- CN102832163B CN102832163B CN201110160266.9A CN201110160266A CN102832163B CN 102832163 B CN102832163 B CN 102832163B CN 201110160266 A CN201110160266 A CN 201110160266A CN 102832163 B CN102832163 B CN 102832163B
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- 238000000034 method Methods 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 239000007789 gas Substances 0.000 claims abstract description 27
- 125000004430 oxygen atoms Chemical group O* 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 43
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 239000007800 oxidant agent Substances 0.000 claims description 22
- 230000001590 oxidative Effects 0.000 claims description 22
- 238000000059 patterning Methods 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 155
- 239000011229 interlayer Substances 0.000 description 18
- 229910044991 metal oxide Inorganic materials 0.000 description 10
- 150000004706 metal oxides Chemical class 0.000 description 10
- 239000010408 film Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000003667 anti-reflective Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000000295 complement Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000003628 erosive Effects 0.000 description 2
- XCCANNJCMHMXBZ-UHFFFAOYSA-N hydroxyiminosilicon Chemical compound ON=[Si] XCCANNJCMHMXBZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical group O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 102100016908 ACKR1 Human genes 0.000 description 1
- 210000000481 Breast Anatomy 0.000 description 1
- BRAPFWKRCSXEBB-UHFFFAOYSA-N CC[SiH]=O Chemical compound CC[SiH]=O BRAPFWKRCSXEBB-UHFFFAOYSA-N 0.000 description 1
- 230000037250 Clearance Effects 0.000 description 1
- 101710008404 GAPDH Proteins 0.000 description 1
- 208000006897 Interstitial Lung Disease Diseases 0.000 description 1
- 210000002381 Plasma Anatomy 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- -1 boron phosphorus Chemical compound 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000035512 clearance Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- HZBAVWLZSLOCFR-UHFFFAOYSA-N oxosilane Chemical compound [SiH2]=O HZBAVWLZSLOCFR-UHFFFAOYSA-N 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
The present invention preferably discloses a kind of method forming opening.The method includes that the hard mask being initially formed carbon containing, in semiconductor substrate surface, then utilizes the gas without oxygen atom this hard mask to be etched technique, to form the first opening in this hard mask.
Description
Technical field
The present invention relates to a kind of method making opening, espespecially a kind of producing in hard mask contacts as hole
Opening and can avoiding in manufacturing process, make the method that contact hole sidewall produces arcuation profile.
Background technology
Along with the progress of semiconductor technology, the microminiaturization of microelectronic element has enter into deep-sub-micrometer grade,
And interval between the density the biggest expression element of the semiconductor element on one chip is the least, this makes
The making that must contact hole is more and more difficult.At present, high-aspect-ratio contact hole to be dug out the most smoothly,
To expose the conductive region of enough below area, it is still the direction that industry is made great efforts.
The known method making contact hole the most first provides and is provided with the semiconductor-based of multiple semiconductor element
The end, wherein semiconductor element can include metal-oxide semiconductor (MOS) (MOS) element such as transistor or resistance.
Then at least one dielectric layer and hard mask are sequentially formed on a semiconductor substrate and partly leading of having covered
Body member, and utilize patterning photoresist oxidant layer hard mask and dielectric layer are carried out a series of pattern to turn
Move technique, to form contact hole in hard mask and dielectric layer.
Include that the etching gas of oxygen atom carries out above-mentioned pattern transfering process it is well known, however, that generally use, and
This etching gas is seriously invaded by often making the sidewall of hard mask when of plasma bombardment to hard mask
Lose and form the profile (bowing profile) of rough arcuation.It is subsequently stuffed in contact hole and partly leads for connecting
The metal material of body member easily cannot be fully filled with whole contact hole just because of the expansion within contact hole
First seal hole, make the contact hole central part inserting metal material form gap (seam) and cause element
Loose contact and affect the operational effectiveness of whole element.
Summary of the invention
Therefore the main object of the present invention is to provide a kind of method made as contacted the openings such as hole, to solve
Current technology make subsequent touch hole produce the problems such as arc profile because of the reason of etching gas.
The preferred embodiment of the present invention is to disclose a kind of method forming opening.It is initially formed the hard mask of carbon containing
In semiconductor substrate surface, then utilize the gas without oxygen atom that this hard mask is etched technique,
To form the first opening in this hard mask.
Another embodiment of the present invention is to disclose a kind of method forming opening.It is initially formed hard mask and Jie
Conductive anti-reflective layer on semiconductor base, then formed the first end anti-reflecting layer on dielectric reflecting-resisting-layer,
In the first end anti-reflecting layer and part dielectric reflecting-resisting-layer, form the first opening, form the second end antireflection
Layer is on dielectric reflecting-resisting-layer and fills up the first opening, in the second anti-reflecting layer and part dielectric reflecting-resisting-layer
Middle formation the second opening and the utilization gas without oxygen atom are etched technique to hard mask, by first
Opening and the second opening are transferred in hard mask form multiple 3rd openings.
Further embodiment of this invention is to disclose a kind of method forming opening.It is initially formed hard mask and Jie
Conductive anti-reflective layer, on semiconductor base, then forms the first end anti-reflecting layer in this dielectric reflecting-resisting-layer
Above, the first end anti-reflecting layer, dielectric reflecting-resisting-layer and hard mask are etched to form first in hard mask
Opening, formed the second end anti-reflecting layer on dielectric reflecting-resisting-layer and fill up opening and etching second end resist
Reflecting layer, dielectric reflecting-resisting-layer and hard mask, to form the second opening in hard mask, wherein etch and firmly cover
It is to utilize the etching gas without oxygen atom during mould.
Accompanying drawing explanation
Fig. 1 to Fig. 3 is the process schematic representation that the preferred embodiment of the present invention forms opening.
Fig. 4 to Fig. 5 is the process schematic representation that another embodiment of the present invention forms opening.
Fig. 6 to Figure 11 is the process schematic representation that another embodiment of the present invention forms opening.
Description of reference numerals
34 contact hole etching stopping layer 36 interlayer dielectric layers
44 hard mask 46 dielectric reflecting-resisting-layers
48 end anti-reflecting layers 54 pattern photoresist oxidant layer
56 opening 60 semiconductor bases
62 end anti-reflecting layers 64 pattern photoresist oxidant layer
80 semiconductor bases 82 contact hole etching stopping layer
84 interlayer dielectric layer 86 hard masks
88 dielectric reflecting-resisting-layer 90 first end anti-reflecting layers
92 patterning photoresist oxidant layer 94 first openings
96 second end anti-reflecting layers 98 pattern photoresist oxidant layer
100 second opening 102 the 3rd openings
Detailed description of the invention
Refer to the technique that Fig. 1 to Fig. 3, Fig. 1 to Fig. 3 are preferred embodiment of the present invention formation opening show
It is intended to.As it is shown in figure 1, first provide semiconductor base 60, such as by monocrystal silicon (monocrystalline
Silicon), GaAs (gallium arsenide, GaAs) or the semi-conducting material known to other known technologies
The substrate constituted.Then establishing criteria metal oxide semiconductor transistor technique is in semiconductor base 60
Surface forms at least one metal oxide semiconductor transistor (not shown), such as p-type metal-oxide half
Conductor (PMOS) transistor, N-type metal-oxide semiconductor (MOS) (NMOS) transistor or complementary metal
Compound quasiconductor (CMOS) transistor, or other various semiconductor elements.Wherein metal-oxide is partly led
Body transistor can respectively have grid structure, clearance wall, source drain, regions and source/drain and silicon are lightly doped
Change the standard crystal tubular constructions such as metal level, and grid structure can include polysilicon gate or normal by front high dielectric
Number dielectric layer (high-K first) technique or rear dielectric layer with high dielectric constant (high-K last) technique are completed
Metal gates.Owing to these techniques are persons skilled in the art, at this without adding repeating.
Then cover be made up of nitride contact hole etching stopping layer (contact etching stop layer,
CESL) 34 on metal oxide semiconductor transistor, wherein the thickness of contact hole etching stopping layer 34
It is about 850 angstroms.Contact hole etching stopping layer 34 optionally exists, and contact hole etching stopping layer
34 optionally provide stress to the element of lower section, such as, can make for the situation that lower section is NMOS
With there is the contact hole etching stopping layer SiC of stretching stress, can using for the situation that lower section is PMOS
There is the contact hole etching stopping layer SiN of compression stress.It it is STI or noncrystal tube elements region in lower section
In the case of, contact hole etching stopping layer may be for stretching stress contact hole etching stopping layer and compression stress
Composite contact hole etching stopping layer combined by the etching stopping layer of contact hole, and composite contact hole etch stop
Interlayer has the cushion that oxide is constituted.
Then form interlayer dielectric layer (interlayer dielectric, ILD) 36 and cover contact hole etch stop
Layer 34 surface.In the present embodiment, interlayer dielectric layer 36 can be made up of three kinds of material layers, including by
Sub-atmospheric pressure chemical gaseous phase deposition (sub-atmospheric pressure chemical vapor deposition,
SACVD) dielectric layer that technique is formed, phosphorosilicate glass (phosphosilicate glass, PSG) layer and four
Ethyl oxosilane (tetraethylorthosilicate, TEOS) layer.The thickness of the most whole interlayer dielectric layer 36
It is about thousands of angstroms, preferably about 3150 angstroms；The thickness of dielectric layer is about hundreds of angstroms, and preferably 250
Angstrom；The thickness of phosphorosilicate glass (phosphosilicate glass, PSG) layer about between 1000 angstroms to 3000 angstroms,
And preferably 1900 angstroms；And the thickness of tetraethyl oxosilane layer is about between 100 angstroms to 2000 angstroms and excellent
Elect 1000 angstroms as.Interlayer dielectric layer 36 in addition to being composite layer, also homogenous material layer；Layer
Between dielectric layer 36 in addition to including above-mentioned material, also can include undoped silica glass (USG), boron phosphorus glass
Glass (BPSG), low dielectric constant dielectric materials such as porous dielectric material, carborundum (SiC), nitrogen oxidation
Silicon (SiON) or its combination in any.
Then hard mask 44 is formed on interlayer dielectric layer 36 surface.According to the preferred embodiments of the present invention,
Hard mask 44 is to be made up of carbonaceous materials such as amorphous carbons (amorphous carbon), and be preferably selected from by
The advanced patterned film (advanced pattern film, APF) (trade name) that Applied Materials obtain,
Its thickness about between 1000 angstroms to 5000 angstroms, and preferably 2000 angstroms.Sequentially form dielectric the most again
Anti-reflecting layer (dielectric anti-reflective coating, DARC) 46 and end anti-reflecting layer (bottom
Anti-reflective coating, BARC) 48 on hard mask 44 surface.In the present embodiment, dielectric anti-reflective
Penetrate the composite junction that layer 46 can be together constituted with oxide layer by silicon oxynitride (silicon oxynitride, SiON) layer
Structure, but it is not limited to this.The wherein thickness of dielectric reflecting-resisting-layer 46 about 250 angstroms, and end anti-reflecting layer
The thickness of 48 the most about 1020 angstroms.Dielectric reflecting-resisting-layer 46, end anti-reflecting layer 48 optionally exist,
And in addition to inorganic material, above-mentioned two anti-reflecting layers it be also possible to use the organic material formed in spin coating mode.
Then the stacked film of above-mentioned formation is carried out pattern transfering process repeatedly, run through forming opening
End anti-reflecting layer 48, dielectric reflecting-resisting-layer 46, hard mask 44, interlayer dielectric layer 36 and the etching of tactile hole
Stop-layer 34 grade also exposes beneath metal oxide semiconductor transistor, such as the source/drain of transistor
Territory, polar region etc..Such as, it is initially formed and is applicable to the patterning photoresist oxidant layer 54 of wavelength about 193 nanometer
On above-mentioned stacked film and expose partial bottom anti-reflecting layer 48 upper surface, wherein pattern photic
The thickness of resist layer 54 is about 1800 angstroms.Then optionally by CO and O2Mixing etching
Patterning photoresist oxidant layer 54 is gone residue (descum) step, to remove photoresist by gas
The unnecessary residue that may produce because of poor visualization in exposure with developing process.
Then as in figure 2 it is shown, utilize patterning photoresist oxidant layer 54 as mask to end anti-reflecting layer
48 carry out pattern transfering process, such as, utilize CF4And CH2F2Mixing etching gas remove part
End anti-reflecting layer 48 and dielectric reflecting-resisting-layer 46, thus will be patterned into the opening figure of photoresist oxidant layer 54
Case is transferred in end anti-reflecting layer 48 and dielectric reflecting-resisting-layer 46 and exposes the hard mask 44 of lower section.
Then as it is shown on figure 3, carry out another figure with patterning photoresist oxidant layer 54 as mask again
Case shifting process, such as, utilize the etching gas without oxygen atom to remove the hard mask 44 of part, thus
End anti-reflecting layer 48 is persistently transferred in hard mask 44 with the opening in dielectric reflecting-resisting-layer 46 with shape
Become the hard mask of patterning.In the present embodiment, H should be preferably selected from without the gas of oxygen atom2、N2、
He、NH3、CH4And C2H4.It is furthermore noted that, utilize the etching gas without oxygen atom to carry out figure
Also can remove the patterning photoresist being located at above hard mask 44 during case hard mask 44 simultaneously
Oxidant layer 54 and end anti-reflecting layer 48, to form opening 56 in hard mask 44.
Interlayer dielectric layer 36 and the etching of contact hole are stopped by the hard mask 44 that can pattern subsequently as mask
Only layer 34 is etched technique, such as, utilize containing C4F6, the mixed gas of O and Ar remove part
Interlayer dielectric layer 36, and then opening 56 pattern in hard mask 44 is transferred to interlayer dielectric layer 36
With contact hole etching stopping layer 34, with complete the preferred embodiment of the present invention make opening method.
Along with live width is more and more less, due to technique now cannot only with pattern transfering process from aforementioned firmly
Required patterns of openings is gone out defined in mask, the most current commonly used double exposure twice development of collocation
Mode obtains required patterns of openings.Then refer to Fig. 4 to Fig. 5, it will for the embodiment of the present invention
The method collocation of above-mentioned formation opening is to double exposure and the schematic diagram of twice developing process.
As shown in Figure 4, the opening 56 that the earlier figures that continues 3 is formed in hard mask 44, the present invention can depend on
Sequence forms another end anti-reflecting layer 62 and patterning photoresist oxidant layer 64 in dielectric reflecting-resisting-layer 46
On, the opening 56 during wherein end anti-reflecting layer 62 preferably fills up dielectric reflecting-resisting-layer 46.
Then as it is shown in figure 5, carry out another erosion first with patterning photoresist oxidant layer 64 as mask
Carving technology is to remove partial bottom anti-reflecting layer 62 and dielectric reflecting-resisting-layer 46 and to expose the hard mask of lower section
44.Then the recycling etching gas without oxygen atom carrys out the hard mask 44 of etching part, is thus resisted at the end
Opening in reflecting layer 62 and dielectric reflecting-resisting-layer 46 is persistently transferred in hard mask 44 form pattern
The hard mask changed.The most removable patterning photoresist oxidant layer 64, end anti-reflecting layer 62 resist with dielectric
Reflecting layer 46, then first embodiment above directly utilizes the hard mask 44 of patterning as mask erosion
The interlayer dielectric layer 36 of the side of inscribing with contact hole etching stopping layer 34, with complete the present embodiment make opening
Technique.
Then refer to Fig. 6 to Figure 11, it is the another embodiment of the present invention method by above-mentioned formation opening
Collocation is to double exposure and the schematic diagram of twice developing process.As shown in Figure 6, first provide semiconductor-based
The end 80, can be as brilliant in first embodiment forms at least one metal-oxide semiconductor (MOS) according to process requirements on it
Body pipe (not shown), such as P-type mos (PMOS) transistor, N-type metal-oxide
Quasiconductor (NMOS) transistor or CMOS complementary metal-oxide-semiconductor (CMOS) transistor, or other are each
Formula semiconductor element.
The most sequentially cover on semiconductor element contact hole etching stopping layer 82, interlayer dielectric layer 84,
Hard mask 86, dielectric reflecting-resisting-layer the 88, first end anti-reflecting layer 90 and patterning photoresist oxidant layer
92.Wherein contact hole etching stopping layer 82, interlayer dielectric layer 84, hard mask 86, dielectric reflecting-resisting-layer
88 and first the material of end anti-reflecting layer 90 etc. can be equal to previous embodiment, at this without adding repeating.
Then first to pattern photoresist oxidant layer 92 as mask to the first end anti-reflecting layer 90 and dielectric
Anti-reflecting layer 88 carries out pattern transfering process, such as, utilize CF4And CH2F2Mixing etching gas
Remove the first end anti-reflecting layer 90 and the part dielectric reflecting-resisting-layer 88 of part.In the present embodiment, this
Etching step is the most only removed the dielectric reflecting-resisting-layer 88 of about half thickness and is not exposed from firmly covering of lower section
Mould 86, subsequently as it is shown in fig. 7, remove patterning photoresist oxidant layer 92 and remaining first end anti-reflective
Penetrate layer 90, to form the first opening 94 in dielectric reflecting-resisting-layer 88.
The most as shown in Figure 8, the second end anti-reflecting layer 96 and patterning photoresist are sequentially formed
Layer 98 is on dielectric reflecting-resisting-layer 88, and wherein the second end anti-reflecting layer 96 preferably fills up dielectric reflection
The first opening 94 in layer 88.Then as it is shown in figure 9, first with patterning photoresist oxidant layer 98
As mask, the second end anti-reflecting layer 96 is carried out another pattern transfering process with dielectric reflecting-resisting-layer 88,
Remove second end of part anti-reflecting layer 90 and the dielectric reflecting-resisting-layer 88 of a half thickness and be not exposed from lower section
Hard mask 86.Then patterning photoresist oxidant layer 98 and remaining second end anti-reflecting layer 96 are removed,
To form the second opening 100 in dielectric reflecting-resisting-layer 88.
As shown in Figure 10, first remove bottom the first opening 94 and the second opening 100 with one etch process
Remaining dielectric reflecting-resisting-layer 88 also exposes hard mask 86, the most again with remaining dielectric reflecting-resisting-layer
88 carry out another etch process as mask, to form multiple 3rd opening 102 in hard mask 86.
Such as the method for first embodiment etch hard mask 86, the present embodiment is preferably with the etching without oxygen atom
Hard mask is removed the hard mask 86 of part forming the 3rd opening 102 by gas, and does not contains oxygen atom
Gas is preferably selected from H2、N2、He、NH3、CH4And C2H4。
The most as shown in figure 11, with remaining dielectric reflecting-resisting-layer 88 as mask, or residue is first removed
Dielectric reflecting-resisting-layer 88, using patterning hard mask 86 as mask to interlayer dielectric layer 84 and contact
Hole etching stopping layer 82 is etched technique, and then is turned by the 3rd opening 102 pattern in hard mask 86
Move to interlayer dielectric layer 84 and contact in hole etching stopping layer 82, to complete another embodiment of the present invention system
The method making opening.It is noted that example of the present invention is in by the not office of the opening produced by said method
It is limited to circle, can be formed along the transverse axis extension of grid according to the technique disclosed by the various embodiments described above again
The groove (slot contact opening) of rough rectangle, is then further filled with required metal material to form square
Shape contact plunger, this embodiment also belongs to the scope that the present invention is contained.
In sum, the present invention utilizes without oxygen atom when mainly etching patterns of openings in stacked film
Etching gas the hard mask in stacked film is etched, to form required opening in hard mask
Figure.According to the preferred embodiments of the present invention, hard mask is preferably selected from the APF that Applied Materials obtain
Thin film, and it is preferably selected from H without the etching gas of oxygen atom2、N2、He、NH3、CH4And C2H4。
Due to known frequently with CO/O2/CO2Hard mask would generally be produced lateral by the etching gas based on Deng
Etching (side etch), can cause again opening short and small in addition to being susceptible to the variation of locality critical live width.
Therefore it is etched just can maintaining good hard mask profile with the gas without oxygen atom, and obtains excellent
Average boundary line width (critical dimension uniformity).Secondly, when critical live width down reduces
Time, with the gas without oxygen atom, hard mask is etched not only can maintaining good opening verticality,
Can avoid again known because use containing oxygen atom etching gas and cause opening randomization (hole distortion)
Problem.
The foregoing is only the preferred embodiments of the present invention, all equivalents done according to the claims in the present invention become
Change and modify, all should belong to the covering scope of the present invention.
Claims (13)
1. the method forming opening, including:
Form the hard mask of carbon containing in semiconductor substrate surface；
Sequentially form dielectric reflecting-resisting-layer, end anti-reflecting layer and patterning photoresist oxidant layer firmly to cover in this
On mould；
Utilize this patterning photoresist oxidant layer to carry out the second etch process, with in this end anti-reflecting layer and should
Dielectric reflecting-resisting-layer is formed the second opening；And
Utilize the gas without oxygen atom and this patterning photoresist oxidant layer that this hard mask is carried out first
Etch process, to form the first opening in this hard mask.
2. the method for claim 1, wherein this hard mask includes amorphous carbon.
3. the method for claim 1, should the gas without oxygen atom be wherein selected from H2、N2、
He、NH3、CH4And C2H4。
4. the method for claim 1, separately includes before wherein forming this hard mask forming grid knot
Structure is in this semiconductor substrate surface, and this grid structure is provided with contact hole etching stopping layer and dielectric layer.
5. method as claimed in claim 4, wherein this grid structure includes polysilicon gate or metal gate
Pole.
6. method as claimed in claim 4, separately includes utilizing this first horizontal stroke being opened on this grid structure
Axle definition square type groove.
7. the method forming opening, including:
Form hard mask and dielectric reflecting-resisting-layer on semiconductor base；
Form the first end anti-reflecting layer on this dielectric reflecting-resisting-layer；
In this first end anti-reflecting layer and this dielectric reflecting-resisting-layer of part, form the first opening, be not exposed from
This hard mask of lower section；
Form the second end anti-reflecting layer and and fill up this first opening on this dielectric reflecting-resisting-layer；
In this second end anti-reflecting layer and this dielectric reflecting-resisting-layer of part, form the second opening, be not exposed from
This hard mask of lower section；And
Utilize, without the gas of oxygen atom, this hard mask be etched technique, by this first opening and this
Two openings are transferred in this hard mask form multiple 3rd openings.
8. method as claimed in claim 7, wherein this hard mask includes amorphous carbon.
9. method as claimed in claim 7, should the gas without oxygen atom be wherein selected from H2、N2、
He、NH3、CH4And C2H4。
10. method as claimed in claim 7, separately includes before wherein forming this hard mask forming grid
Structure is in this semiconductor substrate surface, and this grid structure is provided with contact hole etching stopping layer and dielectric
Layer.
11. methods as claimed in claim 10, wherein this grid structure includes polysilicon gate or metal
Grid.
12. methods as claimed in claim 7, separately include after wherein forming this second opening:
Remove this dielectric reflecting-resisting-layer of part under this first opening and this second opening hard to expose this
Mask；And
This dielectric reflecting-resisting-layer remaining is utilized to carry out this etch process, many to form this in this hard mask
Individual 3rd opening.
13. methods as claimed in claim 10, separately include utilizing the plurality of 3rd to be opened on this grid knot
The transverse axis definition square type groove of structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110160266.9A CN102832163B (en) | 2011-06-15 | The method forming opening |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110160266.9A CN102832163B (en) | 2011-06-15 | The method forming opening |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102832163A CN102832163A (en) | 2012-12-19 |
| CN102832163B true CN102832163B (en) | 2016-11-30 |
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|---|---|---|---|---|
| CN1914715A (en) * | 2004-01-30 | 2007-02-14 | 应用材料公司 | Techniques for the use of amorphous carbon(apf) for various etch and litho integration scheme |
| CN1930670A (en) * | 2004-03-12 | 2007-03-14 | 应用材料公司 | Method of depositing an amorphous carbon film for metal etch hardmask application |
| CN101174099A (en) * | 2006-07-18 | 2008-05-07 | 应用材料公司 | Graded arc for high na and immersion lithography |
| CN101819933A (en) * | 2010-02-11 | 2010-09-01 | 中微半导体设备(上海)有限公司 | Plasma etching method for carbon-containing bed |
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1914715A (en) * | 2004-01-30 | 2007-02-14 | 应用材料公司 | Techniques for the use of amorphous carbon(apf) for various etch and litho integration scheme |
| CN1930670A (en) * | 2004-03-12 | 2007-03-14 | 应用材料公司 | Method of depositing an amorphous carbon film for metal etch hardmask application |
| CN101174099A (en) * | 2006-07-18 | 2008-05-07 | 应用材料公司 | Graded arc for high na and immersion lithography |
| CN101819933A (en) * | 2010-02-11 | 2010-09-01 | 中微半导体设备(上海)有限公司 | Plasma etching method for carbon-containing bed |
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