CN102832120A - Method for applying prestress on nanometer device surface - Google Patents
Method for applying prestress on nanometer device surface Download PDFInfo
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- CN102832120A CN102832120A CN2012103304989A CN201210330498A CN102832120A CN 102832120 A CN102832120 A CN 102832120A CN 2012103304989 A CN2012103304989 A CN 2012103304989A CN 201210330498 A CN201210330498 A CN 201210330498A CN 102832120 A CN102832120 A CN 102832120A
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Abstract
The invention belongs to the field of electronic component assembling and processing technologies, and relates to a method for applying prestress on a nanometer device surface, wherein a nanometer device is heated to a certain temperature between 100 DEG C and 500 DEG C in thermal treatment equipment at a heating rate of 2-8 DEG C/min, and is then put in a lower temperature environment (0-35 DEG C) to be quickly cooled. The method has the advantages of simple technology, obvious effect and low cost.
Description
Affiliated technical field
The invention belongs to electronic devices and components assembling and processing technique field, relate to a kind of surperficial method for applying prestressing force of nano-device.
Background technology
To the process of nano-electron components and parts technical development, the integrated level of device is increasingly high from microelectronics, and the problem in science of corresponding generation, engineering problem are also more and more.When the high integration components and parts were integrated on a chip or the little space surface, the mini component of device surface high integration is some " fragility " relatively, received external force easily and peeled off.Therefore, if can promote the surface strength of the integrated components and parts of high density, will have very large future in engineering applications.
Simultaneously, because in the superintegrated nano-device, the device that quite a few is arranged is a piezoelectric sensitivity array film champion device, so " rigidity, the flexibility " of sample micro unit structure just becomes the basic of micro-signal sensing sensitivity.For traditional microelectronic technique, in the time of the device completion, its Young's modulus, mechanical strength just are cured, and can't change.If can utilize the artificial continuous controllable of later stage heat treatment means to regulate the sensor performance index of mechanical-electric coupling mechanism, will advance the development of scientific and engineering circle significantly.
Traditional quenching technical mainly is that metal works is heated to a certain proper temperature and keeps a period of time, immerses in the quenching media metal heat treatmet technology of cooling fast immediately.Quenching media commonly used has salt solution, water, mineral oil, air etc.Quenching can improve the hardness and the resistance to wear of metal works, thereby is widely used in various workers, mould, measurer and requires the part of surface abrasion resistance.And similar quenching technical effect, also have the air channel air cooling method after toughened glass heats, apply prestressed technology.Make the intensity of toughened glass be far superior to the mechanical strength of simple glass.Therefore, to the quenching of high integration nano-device, also can be that a kind of macroscopic view is seen the innovation and development in the world to being situated between.High integration nanometer component thermal quenching technical, its development trend must be that technology is simple, effect is obvious, and with low cost.
Summary of the invention
The objective of the invention is to propose that a kind of technology is simple, effect is obvious, and the surperficial method for applying prestressing force of nano-device with low cost.Technical scheme of the present invention is following:
A kind of surperficial method for applying prestressing force of nano-device; It is characterized in that; Nano-device speed with 2-8 ℃/min in Equipment for Heating Processing is warmed up to certain temperature between 100～500 ℃, places the lower temperature environments of (0～35 ℃) to cool off fast again.
As a kind of execution mode, described surperficial method for applying prestressing force is characterized in that, slowly is warmed up to 400 ℃ with the speed of 5 ℃/min, afterwards, is placed on the platform of freezing point temperature; Described Equipment for Heating Processing is Muffle furnace, tube furnace or resistance furnace.
The present invention is with the thermal quenching technology in macroscopical heat treatment means; After doing suitable adjustment; Introduce in high integration micron, the nanometer components and parts chip; Artificially the thermal stress distribution of controlled Adjustment System is adjusted with the artificial secondary performance that realizes the components and parts integrated system, thereby improves the surface strength of sample.Micro-nano-scale Technology for Heating Processing of the present invention can be scientists exploration microcosmos new laboratory facilities is provided, and range of application is also quite extensive.Like this, will make micro-nano process technology get into the degree of artificial more controlled design and processing.Realize truly " nanometer heat treatment technics " simultaneously, and commercialization.
Embodiment
Be elaborated in the face of technical scheme of the present invention down.
Because the precision components of high integration can't be born the elevated temperature heat hardening heat in the traditional metal metallurgical technology, excessive thermal shock may cause the fatefulue breaking-up of device.Therefore, can use for reference comparatively gentle means handles.Components and parts can be at Equipment for Heating Processing (equipment such as Muffle furnace, tube furnace, resistance furnace; And all means that can heat that are not limited only to this all can) in be warmed up to a certain degree (100～500 ℃) with the speed of 2-8 ℃/min; High integration sample after will heating then is positioned over (0～35 ℃) in the lower temperature environments rapidly.Can directly be positioned in the air ambient, also can directly be put on the platform of freezing point (with silicon chip or quartz glass plate as on the ice cube).Like this, because the cold contraction of chance rapidly of sample surfaces can produce prestressing force on the components and parts surface, improve the surface strength of sample.
One embodiment of the present of invention: components and parts can be in box Muffle furnace; Speed with 5 ℃/min is warmed up to 400 ℃; High integration sample after will heating then is positioned on the platform of freezing point (on the sample stage of freezing point temperature, with silicon chip or quartz glass plate as on the ice cube) rapidly.Like this, because the cold contraction of chance rapidly of sample surfaces can produce prestressing force on the components and parts surface, improve the surface strength of sample.
Claims (3)
1. the surperficial method for applying prestressing force of a nano-device; It is characterized in that; Nano-device speed with 2-8 ℃/min in Equipment for Heating Processing is warmed up to certain temperature between 100～500 ℃, places the lower temperature environments of (0～35 ℃) to cool off fast again.
2. surperficial method for applying prestressing force according to claim 1 is characterized in that, slowly is warmed up to 400 ℃ with the speed of 5 ℃/min, afterwards, is placed on the platform of freezing point temperature.
3. the internal stress removing method of nano-device according to claim 1 is characterized in that, described Equipment for Heating Processing is Muffle furnace, tube furnace or resistance furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2012103304989A CN102832120A (en) | 2012-09-07 | 2012-09-07 | Method for applying prestress on nanometer device surface |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012103304989A CN102832120A (en) | 2012-09-07 | 2012-09-07 | Method for applying prestress on nanometer device surface |
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| CN102832120A true CN102832120A (en) | 2012-12-19 |
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| CN2012103304989A Pending CN102832120A (en) | 2012-09-07 | 2012-09-07 | Method for applying prestress on nanometer device surface |
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Citations (7)
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| JPH10251815A (en) * | 1997-03-14 | 1998-09-22 | Korea Electrotechnol Inst | Fe base amorphous soft magnetic material and production thereof |
| CN1557717A (en) * | 2004-01-19 | 2004-12-29 | 上海交通大学 | Method for preparing zinc oxide nanometer material with orientation arrangement nano-towers |
| CN101279841A (en) * | 2008-05-22 | 2008-10-08 | 中国科学院电工研究所 | Method for preparing multi-ferroic material under intense magnetic field |
| CN101525716A (en) * | 2009-04-21 | 2009-09-09 | 合肥工业大学 | Iron aluminide intermetallic compound-titanium diboride composite material and preparation method thereof |
| CN101701928A (en) * | 2009-10-27 | 2010-05-05 | 武汉理工大学 | Gas-sensitive transducer with nano wall structure and preparation method thereof |
| CN101899644A (en) * | 2010-07-20 | 2010-12-01 | 上海交通大学 | Method for preparing ordered porous aluminum oxide film-transparent conductive glass composite substrate |
| CN102104077A (en) * | 2010-10-28 | 2011-06-22 | 中山大学 | Manufacturing method for nanowire with CuO/ZnO core/shell structure |
-
2012
- 2012-09-07 CN CN2012103304989A patent/CN102832120A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10251815A (en) * | 1997-03-14 | 1998-09-22 | Korea Electrotechnol Inst | Fe base amorphous soft magnetic material and production thereof |
| CN1557717A (en) * | 2004-01-19 | 2004-12-29 | 上海交通大学 | Method for preparing zinc oxide nanometer material with orientation arrangement nano-towers |
| CN101279841A (en) * | 2008-05-22 | 2008-10-08 | 中国科学院电工研究所 | Method for preparing multi-ferroic material under intense magnetic field |
| CN101525716A (en) * | 2009-04-21 | 2009-09-09 | 合肥工业大学 | Iron aluminide intermetallic compound-titanium diboride composite material and preparation method thereof |
| CN101701928A (en) * | 2009-10-27 | 2010-05-05 | 武汉理工大学 | Gas-sensitive transducer with nano wall structure and preparation method thereof |
| CN101899644A (en) * | 2010-07-20 | 2010-12-01 | 上海交通大学 | Method for preparing ordered porous aluminum oxide film-transparent conductive glass composite substrate |
| CN102104077A (en) * | 2010-10-28 | 2011-06-22 | 中山大学 | Manufacturing method for nanowire with CuO/ZnO core/shell structure |
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Application publication date: 20121219 |