CN102820433A - Anti-reflection structure of organic light emitting diode (OLED) - Google Patents
Anti-reflection structure of organic light emitting diode (OLED) Download PDFInfo
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Abstract
The invention provides an anti-reflection structure of an organic light emitting diode (OLED). An anti-reflection layer is added on a negative pole of a top lighting OLED or a positive pole of a bottom lighting OLED, and refraction rate of the anti-reflection layer is between those of an upper medium layer and a lower medium layer, so that light emitting efficiency is improved, and OLED performance is improved. When the anti-reflection layer is located at the negative pole of the top lighting OLED, the anti-reflection layer can be arranged above or below a negative pole material layer; and when the anti-reflection layer is located at the positive pole of the bottom lighting OLED, the anti-reflection layer can be arranged above or below a positive pole material layer. Anti-reflection effects can be achieved by both modes.
Description
Technical field
The present invention relates to the male or female structure of a kind of OLED, can be applied to and push up in luminous or the luminous AMOLED structure in the end.
Background technology
Compare present main flow flat panel display Thin Film Transistor-LCD (TFT-LCD); Active matrix organic light emitting diode display (AMOLED) has high-contrast, wide viewing angle, low-power consumption, advantage such as lighter and thinner; Being expected to become the flat panel display of future generation after LCD, is one of the maximum technology that receives publicity in the present flat panel display.
Organic light emitting diode display (OLED) is a kind of active illuminating device, and it not only can also can be used as the light source of solid-state illumination as the pixel that constitutes the AMOLED display.So the lifting of the raising of OLED performance, especially efficient directly has influence on its application.
Wherein, the transmitance of the transmitance of raising top-illuminating OLED negative electrode and end illuminating OLED anode all helps improving the efficient of OLED and respective devices thereof.
Summary of the invention
Deficiency to prior art the objective of the invention is to: the anti-reflection structure of a kind of OLED is provided, to promote the light extraction efficiency of OLED.
For realizing above-mentioned purpose, the technical scheme that the present invention adopts comprises:
The anti-reflection structure of a kind of OLED; On the anode of said OLED, be covered with functional layer, cathode material layer and cover layer successively; It is characterized in that: between said cathode material layer and said cover layer, increase the antireflection layer with conductivity, the refractive index of said cathode material layer is c, and said tectal refractive index is a; And the refractive index b of said antireflection layer satisfies: c>b>a, perhaps c <b < a.
Said cover layer is a single layer structure of selecting any material among Alq3, Liq, organic light emission layer material, LiF, the ZnSe to constitute, or the laminated construction of selecting wherein any at least two materials to constitute;
The material of said cathode material layer is Al, Ag, ITO, IZO, AZO, Mg:Ag or Graphene;
The material of said antireflection layer is Al, Ag, ITO, IZO or AZO.
Said antireflection layer is the material of composite construction or the material of nanostructure, and its equivalent refractive index b ' is between a and c.
For realizing above-mentioned purpose, the technical scheme that the present invention adopts also comprises:
The anti-reflection structure of a kind of OLED; On the anode of said OLED, be covered with functional layer and cathode material layer successively; It is characterized in that: between said cathode material layer and said functional layer, increase the antireflection layer with conductive characteristic, the work function of said antireflection layer is less than 4eV, and the refractive index of the layer of material of pressing close to most with said antireflection layer in the said functional layer is d; And the refractive index b of said antireflection layer satisfies: c>b>d, perhaps c <b < d.
The layer of material of pressing close to most with said antireflection layer in the said functional layer is one that selects among LiF, CsF, Liq, K, Mg, the Ca;
The material of said cathode material layer is Al, Ag, ITO, IZO, AZO, Mg:Ag or Graphene;
The material of said antireflection layer is Al, Ag, ITO, IZO, AZO or Graphene.
Said antireflection layer is the material of composite construction or the material of nanostructure, and its equivalent refractive index b ' is between c and d.
For realizing above-mentioned purpose, the technical scheme that the present invention adopts also comprises:
The anti-reflection structure of a kind of OLED; Below the negative electrode of said OLED, be covered with functional layer and anode material layer successively, it is characterized in that: between said anode material layer and said functional layer, be added with the antireflection layer with conductive characteristic, the work function of said antireflection layer is greater than 4.5eV; The refractive index of said anode material layer is e; The refractive index of pressing close to the layer of material of said antireflection layer in the said functional layer most is f, and the refractive index b of said antireflection layer satisfies: e>b>f, perhaps e <b < f.
The layer of material of pressing close to most with said antireflection layer in the said functional layer is a kind of among NPB, TPD, the m-MTDATA;
The material of said anode material layer is Al, Ag, ITO, IZO, AZO or Graphene;
The material of said antireflection layer is Al, Ag, ITO, IZO, AZO or Graphene.
Said antireflection layer is the material of composite construction or the material of nanostructure, and its equivalent refractive index b ' is between e and f.
For realizing above-mentioned purpose, the technical scheme that the present invention adopts also comprises:
The anti-reflection structure of a kind of OLED; Below the negative electrode of said OLED, be covered with functional layer and anode material layer successively; It is characterized in that: below said anode material layer, be added with the antireflection layer with conductive characteristic, the refractive index of said anode material layer is e, and the refractive index of pressing close to the layer of material of said anode material layer in the said functional layer most is f; The refractive index b of said antireflection layer satisfies: f＞e＞b, perhaps f＜e＜b.
The layer of material of pressing close to most said anode material layer in the said functional layer is a kind of among NPB, TPD, the m-MTDATA;
The material of said anode material layer is Al, Ag, ITO, IZO, AZO or Graphene;
The material of said antireflection layer is Al, Ag, ITO, IZO, AZO or Graphene.
Said antireflection layer is the material of composite construction or the material of nanostructure, and its equivalent refractive index b ' satisfies: f＞e>b ' or f＜e b '.
Compared with prior art; The beneficial effect that the present invention has is: the present invention increases an antireflection layer at the negative electrode of top-illuminating OLED or on the anode of end illuminating OLED; And make the refractive index of this antireflection layer between the refractive index of its upper and lower two layer medium; Can improve light extraction efficiency, thereby improve the performance of OLED.
Description of drawings
Fig. 1 is light incides substrate S2 through deielectric-coating S1 from medium S0 reflection and refraction sketch map;
Fig. 2 is that monofilm reflectivity R is with optical thickness of thin film n
1The change curve of h;
Fig. 3 is the anti-reflection structural representation of a kind of top-illuminating OLED negative electrode provided by the invention;
Fig. 4 is the anti-reflection structural representation of another kind of top-illuminating OLED negative electrode provided by the invention;
Fig. 5 is the anti-reflection structural representation of illuminating OLED anode of a kind of end provided by the invention;
Fig. 6 is the anti-reflection structural representation of illuminating OLED anode of the another kind of end provided by the invention.
Embodiment
It is following at first to introduce basic optical principle:
As shown in Figure 1, light is n from refractive index
0Medium S0 through refractive index be n
1, thickness is that to incide refractive index be n for the deielectric-coating S1 of h
2Substrate S2, the reflectance formula on deielectric-coating S1 is following:
Wherein: R is the reflectivity on deielectric-coating S1;
Following formula shows, for certain substrate S2 and deielectric-coating S1, n
1And n
2Be constant, R with
(promptly with n
1H) change.
Below with crown board K9 glass (refractive index n
2=1.52) (refractive index is n to surface plating thin film
1), wavelength is that (refractive index is n from air for the light of λ
0) in vertical incidence be example, to setted wavelength λ and different refractivity n
1Deielectric-coating, the monofilm reflectivity R that can calculate is with optical thickness of thin film n
1The change curve of h, as shown in Figure 2.
According to analysis, from Fig. 2, can find out the film total reflectivity:
(1) as long as film of which kind of refractive index no matter is the optical thickness n of film
1H is the integral multiple (being the even-multiple of λ/4) of λ/2, and reflectivity all equals the not preceding reflectivity of plated film of substrate, neither anti-reflection also not increasing instead.
(2) when the refractive index n of rete
1Less than the substrate of glass refractive index n
2, as long as optical thickness of thin film n
1H is not the integral multiple of λ/2, and anti-reflection effect is all arranged, and n
1More little, R is more little for reflectivity, and antireflective effect is good more, as optics thickness of film n
1When h was the odd of λ/4, it is minimum that reflectivity reaches, and is anti-reflection film;
(3) when the refractive index n of rete
1Greater than the substrate of glass refractive index n
2, as long as optical thickness of thin film n
1H is not the integral multiple of λ/2, and the effect that increases reflection all can be arranged, and n
1Big more, reflectivity R is big more, and reflecting effect is good more, and when optical thickness of thin film was the odd of λ/4, maximum appearred in reflectivity, for increasing anti-film.
Therefore, the present invention is based on above-mentioned optical principle, a kind of anti-reflection structure that improves the OLED of top-illuminating OLED negative electrode transmitance and end illuminating OLED anode transmitance is provided.
As shown in Figure 3; It is the anti-reflection structure of a kind of top-illuminating OLED negative electrode provided by the invention; The anode of said top-illuminating OLED can be made up of two-layer indium tin oxide 10,12 (ITO) anode layer 11 of therebetween (like Al); In the prior art, general covering function layer 20 on said anode, covered cathode material layer 30 and cover layer 40 again on the said functional layer 20.Wherein, The version of said functional layer 20 has a lot of versions; Can't enumerate one by one in this application, in Fig. 3, only be exemplified below with modal version; It comprises: hole injection layer 22 (HIL), hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer 21 (EIL), and claim that the part between hole injection layer 22 and the electron injecting layer 21 is an organic layer 23.During said OLED work, said functional layer 20 is because the radiation recombination in electronics and hole and luminous, and light penetrates to the top through cathode material layer 30 and cover layer 40.
In order to improve light penetration; (refractive index is to increase one deck between a) to have the antireflection layer 50 of conductive characteristic (refractive index is b at said cathode material layer 30 (refractive index is c) and said cover layer 40 in the present invention; Thickness is H), can know according to above-mentioned principle analysis, as long as the refractive index of said antireflection layer 50 satisfies: c b a; Perhaps < < a can make said antireflection layer 50 have antireflective effect to b to c.
Also having other requirement: b * H as for the optical thickness of saying said antireflection layer 50 can not be 1/4th even-multiple of wavelength of light, in the OLED of reality but without this factor of worry about.Reason is: the hole injection layer of organic layer 20 (HIL) is a continuum with the wave-length coverage of the light of the luminous generation of said electron injecting layer 21 (EIL) radiation recombination, is assumed to be [λ 1, and λ 2]; Its spectrum is not to have only one or several discrete points; Therefore, even said antireflection layer 50 does not have anti-reflection effect for the some wavelength value in [λ 1, and λ 2] or certain several wavelength value; [λ 1 but for whole wave-length coverage; λ 2], said antireflection layer 50 still can play antireflective effect on the whole, regulates but concrete thickness need carry out thickness optimization according to actual conditions.
Certainly, corresponding to the OLED (like ruddiness, green glow, blue light OLED, white light OLED) of the different characteristics of luminescences, the wavelength of light that its requirement is mainly passed through is also inequality, therefore need the optical thickness b * H of said antireflection layer 50 be adjusted.To require main light through the most responsive 500nm of human eye is example; At this moment; Should avoid 1/4th the even-multiple of the optical thickness b * H of said antireflection layer 50 near 500nm as far as possible; And the optical thickness b * H that as far as possible makes said antireflection layer 50 is near 1/4th the odd of 500nm, can be farthest passed by the top of top-illuminating OLED so that wavelength is the light of 500nm.What deserves to be mentioned is that the thickness of concrete antireflection layer need carry out thickness optimization adjusting (thickness may be littler than 1/4th wavelength, but anti-reflection function is still arranged) according to actual conditions and needs, so that transmitance is very big.
For make said cathode material layer 30 (refractive index is c), said cover layer 40 (refractive index be a) and the refractive index of said antireflection layer 50 (refractive index is b) satisfy: c>b a; Perhaps c <b < a; The material of said cathode material layer 30, said cover layer 40 and said antireflection layer 50 can be done multiple choices, divides two kinds of situation to illustrate at this:
（1）c>b>a
Said cover layer 40 is selected LiF (refractive index is 1.4) or other organic material such as NPB, TPD (refractive index about about 1.8) or Alq3 (refractive index is 1.71) for use.
At this moment, if the material selection IZO of said cathode material layer 30, the material of then said antireflection layer 50 can be selected ITO for use.
As shown in table 1, be refractive index and the extinction coefficients of various materials in the 550nm wavelength:
Table 1
| Material | Refractive index | Extinction coefficient |
| Al | 0.963 | 6.69 |
| Ag | 0.124 | 3.348 |
| Li | 0.206 | 2.474 |
| K | 0.05 | 1.55 |
| Mg | 0.31 | 5.10 |
| Ca | 0.620 | 2.142 |
| Ni | 1.772 | 3.252 |
| Au | 0.359 | 2.691 |
| Cu | 0.944 | 2.594 |
| ITO | 1.822 | 0.018 |
| IZO | 2.031 | 0.019 |
| S?iNx | 1.799 | 0 |
| S?i?Ox | 1.723 | 0 |
(annotate: table 1 just is used for doing reference, does not represent can be used for doing male or female.）
（2）c<b<a
Said cover layer 40 can be selected organic material (refractive index is between 1.8-1.9) or ZnSe (refractive index is 2.89) or Ta such as NPB, TPD or Alq3 for use
2O
5(refractive index is 2.16).
At this moment, can know that if the material selection Al of said cathode material layer 30, the material of then said antireflection layer 50 can be selected ITO, IZO when selecting ZnSe to do cover layer (if) etc. for use by table 1; If the material selection Ag of said cathode material layer 30, the material of then said antireflection layer 50 can be selected Al, ITO or IZO for use ... And so on.
Be exemplified below in detail again:
Said cover layer 40 is single layer structures of selecting any material among Alq3, Liq, EML (organic light emission layer material), LiF, the ZnSe to constitute, or the laminated construction of selecting wherein any at least two materials to constitute;
The material of said cathode material layer 30 is Al, Ag, ITO, IZO, AZO, Mg:Ag or Graphene;
The material of said antireflection layer 50 is Al, Ag, ITO, IZO or AZO.
In above-mentioned situation (1) and situation (2); The material that the material of said antireflection layer 50 is enumerated in selecting above-mentioned table 1; Can also be the material (the for example composite construction of multiple layers of different materials composition) of composite construction or the material of nanostructure; As long as it has conductive characteristic and translucence (in fact all having translucence as long as enough approach), and its equivalent refractive index b ' gets final product between a and c.
As shown in Figure 4, be the anti-reflection structure of another kind of top-illuminating OLED negative electrode provided by the invention, it comprises anode, functional layer 20, cathode material layer 30 (refractive index is c) and cover layer 40; In order to improve light penetration, the present invention increase between said cathode material layer 30 and said functional layer 20 that one deck has conductive characteristic and work function less (as, less than 4eV) antireflection layer 50 (refractive index is b; Thickness is H); And the refractive index of the layer of material of supposing to press close to most with said antireflection layer 50 in the said functional layer 20 is d, as long as then satisfy formula: c>b>d; Perhaps < < d can realize anti-reflection function to b to c.
In the present embodiment; One deck of pressing close to most with said antireflection layer 50 in the said functional layer 20 is an electron injecting layer 21; Electron injecting layer 21 described herein; Both can be the material layer that only has the electronics function of injecting, also can be the doped layer that has electronics function of injecting and electric transmission function concurrently, at this with electron injecting layer 21 general designations.
In the present embodiment, the material of said cathode material layer 30, said electron injecting layer 21 and said antireflection layer 50 can be done multiple choices, divides two kinds of situation to illustrate at this:
（1）c<b<d
Said electron injecting layer 21 is selected LiF (refractive index is 1.4) or Liq (refractive index is about 1.7) for use.
At this moment, if the material selection Al of said cathode material layer 30, the material of then said antireflection layer 50 can be selected Ag for use.
（2）c>b>d
Said electron injecting layer 21 is selected K or Ca or Mg for use.And the material of antireflection layer 50 can be selected Al for use, and cathode material layer 30 can be selected ITO or IZO etc. for use.
Be exemplified below in detail again:
The layer of material of pressing close to most with said antireflection layer 50 in the said functional layer 20 is one that selects among LiF, CsF, Liq, K, Mg, the Ca;
The material of said cathode material layer 30 is Al, Ag, ITO, IZO, AZO, Mg:Ag or Graphene;
The material of said antireflection layer 50 is Al, Ag, ITO, IZO, AZO or Graphene.
Likewise; In above-mentioned situation (1) and situation (2), the material that the material of said antireflection layer 50 is enumerated in selecting above-mentioned table 1, can also be the material (the for example composite construction of multiple layers of different materials composition) of composite construction or the material of nanostructure; As long as it has translucence and conductive characteristic; And work function less (as, less than 4eV), and its equivalent refractive index b ' gets final product between c and d.
As shown in Figure 5, be the anti-reflection structure of illuminating OLED anode of a kind of end provided by the invention, the structure of the negative electrode 60 of illuminating OLED of the said end does not repeat them here; Below said negative electrode 60, also be coated with functional layer 20 and anode material layer 70 (refractive index is e); And the present invention has more added antireflection layer 50 (refractive index is b) between said anode material layer 70 and said functional layer 20, and the refractive index of pressing close to the layer of material of said antireflection layer 50 in the said functional layer 20 most is f, at this moment; Require said antireflection layer 50 to have conductive characteristic and higher work function (as greater than 4.5eV; Be beneficial to the injection in hole), and satisfy formula: e>b>f, perhaps e <b < f.
In the present embodiment; One deck of pressing close to most with said antireflection layer 50 in the said functional layer 20 is hole injection layer 22 (HIL); Hole injection layer 22 described herein; Both can be the material layer that only has the hole function of injecting, also can be the doped layer that has hole function of injecting and hole transport function concurrently, at this with hole injection layer 22 general designations.
In the present embodiment, the material of said anode material layer 70, said hole injection layer 22 and said antireflection layer 50 can be done multiple choices, divides two kinds of situation to illustrate at this:
（1）e<b<f
Said hole injection layer 22 is selected NPB, TPD for use, or a kind of among the m-MTDATA etc.
At this moment, if the material selection Al of said anode material layer 70, the material of then said antireflection layer 50 can be selected ITO for use.
（2）e>b>f
Said hole injection layer 22 is selected NPB, TPD for use, or a kind of among the m-MTDATA etc.
At this moment, if the material selection IZO of said anode material layer 70, the material of then said antireflection layer 50 can be selected ITO for use.
Be exemplified below in detail again:
The layer of material of pressing close to most with said antireflection layer 50 in the said functional layer 20 is NPB, TPD or m-MTDATA;
The material of said anode material layer 70 is Al, Ag, ITO, IZO, AZO or Graphene;
The material of said antireflection layer 50 is Al, Ag, ITO, IZO, AZO or Graphene.
Likewise; In above-mentioned situation (1) and situation (2); The material that the material of said antireflection layer 50 is enumerated in selecting above-mentioned table 1; Can also be the material (for example multiple layers of different materials form composite construction) of composite construction or the material of nanostructure, as long as that it has is translucent, conductive characteristic and higher work function (as greater than 4.5eV), and its equivalent refractive index b ' gets final product between e and f.
As shown in Figure 6; It is the anti-reflection structure of illuminating OLED anode of the another kind of end provided by the invention; The negative electrode of illuminating OLED of said end below also is coated with functional layer 20 and anode material layer 70 (refractive index is e), and the present invention more covers one deck antireflection layer 50 (refractive index is b) below said anode material layer 70, and the refractive index of pressing close to the layer of material of said anode material layer 70 in the said functional layer 20 most is f; At this moment; Require said antireflection layer 50 to have translucent and conductive characteristic, and satisfy formula: f＞e＞b, perhaps f＜e <b.
In the present embodiment; One deck of pressing close to most with institute anode material layer 70 in the said functional layer 20 is hole injection layer 22 (HIL); Hole injection layer 22 described herein; Both can be the material layer that only has the hole function of injecting, also can be the doped layer that has hole function of injecting and hole transport function concurrently, at this with hole injection layer 22 general designations.
In the present embodiment, the material of said anode material layer 70, said hole injection layer 22 and said antireflection layer 50 can be done multiple choices, divides two kinds of situation to illustrate at this:
（1）f＜e<b
Said hole injection layer 22 is selected NPB, TPD for use, or a kind of among the m-MTDATA etc.
At this moment, if the material selection ITO of said anode material layer 70, the material of then said antireflection layer 50 can be selected IZO for use.
（2）f＞e＞b
Said hole injection layer 22 is selected NPB, TPD for use, or a kind of among the m-MTDATA etc.
At this moment, if the material selection ITO of said anode material layer 70, the material of then said antireflection layer 50 can be selected Al, Ag or Graphene for use.
Be exemplified below in detail again:
The layer of material of pressing close to most with institute anode material layer 70 in the said functional layer 20 is NPB, TPD or m-MTDATA;
The material of said anode material layer 70 is Al, Ag, ITO, IZO, AZO or Graphene;
The material of said antireflection layer 50 is Al, Ag, ITO, IZO, AZO or Graphene.
Likewise; In above-mentioned situation (1) and situation (2); The material that the material of said antireflection layer 50 is enumerated in selecting above-mentioned table 1; Can also be the material (the for example composite construction of multiple layers of different materials composition) of composite construction or the material of nanostructure, as long as it has translucent and conductive characteristic, and its equivalent refractive index b ' satisfies f＞e＞b ' or f＜e＜b ' gets final product.
More than explanation is just illustrative for the purpose of the present invention; And nonrestrictive, those of ordinary skills understand, under the situation of spirit that does not break away from claim and limited and scope; Can make many modifications, variation or equivalence, but all will fall within protection scope of the present invention.
Claims (12)
1. the anti-reflection structure of an OLED; On the anode of said OLED, be covered with functional layer, cathode material layer and cover layer successively; It is characterized in that: between said cathode material layer and said cover layer, increase the antireflection layer with conductivity, the refractive index of said cathode material layer is c, and said tectal refractive index is a; And the refractive index b of said antireflection layer satisfies: c>b>a, perhaps c <b < a.
2. the anti-reflection structure of OLED according to claim 1 is characterized in that:
Said cover layer is a single layer structure of selecting any material among Alq3, Liq, organic light emission layer material, LiF, the ZnSe to constitute, or the laminated construction of selecting wherein any at least two materials to constitute;
The material of said cathode material layer is Al, Ag, ITO, IZO, AZO, Mg:Ag or Graphene;
The material of said antireflection layer is Al, Ag, ITO, IZO or AZO.
3. the anti-reflection structure of OLED according to claim 1, it is characterized in that: said antireflection layer is the material of composite construction or the material of nanostructure, and its equivalent refractive index b ' is between a and c.
4. the anti-reflection structure of an OLED; On the anode of said OLED, be covered with functional layer and cathode material layer successively; It is characterized in that: between said cathode material layer and said functional layer, increase the antireflection layer with conductive characteristic, the work function of said antireflection layer is less than 4eV, and the refractive index of the layer of material of pressing close to most with said antireflection layer in the said functional layer is d; And the refractive index b of said antireflection layer satisfies: c>b>d, perhaps c <b < d.
5. the anti-reflection structure of OLED according to claim 4 is characterized in that:
The layer of material of pressing close to most with said antireflection layer in the said functional layer is one that selects among LiF, CsF, Liq, K, Mg, the Ca;
The material of said cathode material layer is Al, Ag, ITO, IZO, AZO, Mg:Ag or Graphene;
The material of said antireflection layer is Al, Ag, ITO, IZO, AZO or Graphene.
6. the anti-reflection structure of OLED according to claim 4, it is characterized in that: said antireflection layer is the material of composite construction or the material of nanostructure, and its equivalent refractive index b ' is between c and d.
7. the anti-reflection structure of an OLED; Below the negative electrode of said OLED, be covered with functional layer and anode material layer successively, it is characterized in that: between said anode material layer and said functional layer, be added with the antireflection layer with conductive characteristic, the work function of said antireflection layer is greater than 4.5eV; The refractive index of said anode material layer is e; The refractive index of pressing close to the layer of material of said antireflection layer in the said functional layer most is f, and the refractive index b of said antireflection layer satisfies: e>b>f, perhaps e <b < f.
8. the anti-reflection structure of OLED according to claim 7 is characterized in that:
The layer of material of pressing close to most with said antireflection layer in the said functional layer is a kind of among NPB, TPD, the m-MTDATA;
The material of said anode material layer is Al, Ag, ITO, IZO, AZO or Graphene;
The material of said antireflection layer is Al, Ag, ITO, IZO, AZO or Graphene.
9. the anti-reflection structure of OLED according to claim 7, it is characterized in that: said antireflection layer is the material of composite construction or the material of nanostructure, and its equivalent refractive index b ' is between e and f.
10. the anti-reflection structure of an OLED; Below the negative electrode of said OLED, be covered with functional layer and anode material layer successively; It is characterized in that: below said anode material layer, be added with the antireflection layer with conductive characteristic, the refractive index of said anode material layer is e, and the refractive index of pressing close to the layer of material of said anode material layer in the said functional layer most is f; The refractive index b of said antireflection layer satisfies: f＞e>b, perhaps f＜e <b.
11. the anti-reflection structure of OLED according to claim 10 is characterized in that:
The layer of material of pressing close to most said anode material layer in the said functional layer is a kind of among NPB, TPD, the m-MTDATA;
The material of said anode material layer is Al, Ag, ITO, IZO, AZO or Graphene;
The material of said antireflection layer is Al, Ag, ITO, IZO, AZO or Graphene.
12. the anti-reflection structure of OLED according to claim 10 is characterized in that: said antireflection layer is the material of composite construction or the material of nanostructure, and its equivalent refractive index b ' satisfies: f＞e>b ' or f＜e b '.
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| CN (1) | CN102820433B (en) |
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