CN102820344A - 镓砷磷/磷化镓黄光窄带探测器及其制造方法 - Google Patents
镓砷磷/磷化镓黄光窄带探测器及其制造方法 Download PDFInfo
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Abstract
镓砷磷/磷化镓黄光窄带探测器及其制造方法,涉及一种探测器。提供一种用于红外上转换材料检测的镓砷磷/磷化镓黄光窄带探测器及其制造方法。探测器设有外延片,外延片自下而上依次设有n型高掺杂磷化镓单晶衬底、非掺杂的磷化镓缓冲层、非掺杂的GaAs0.15P0.85光吸收层和非掺杂的磷化镓帽层,在外延片的n型高掺杂磷化镓单晶衬底的底部设n型欧姆接触电极;在外延片的非掺杂的磷化镓帽层上依次生长氮化硅掩膜、通过锌扩散形成的p型高掺杂扩散层、p型欧姆接触电极和氮化硅抗反射膜。具有容易制备、成本低廉、对红外光几乎不响应等优点,可用于钞票等的红外上转换材料检测,提高验钞机的验钞能力。
Description
技术领域
本发明涉及一种探测器,尤其是涉及一种镓砷磷/磷化镓(GaAsP/GaP)黄光窄带探测器及其制造方法。
背景技术
红外上转换材料是利用不可见的红外光来激发产生可见光(通常是黄光)的一种光学功能材料,具有成分复杂、不易被发现、隐蔽性好、化学稳定性强等特点,广泛运用在防伪技术上。高效率的红外上转换材料使用价格比较高,因此,在进行油墨混合时,要求尽量降低转换材料含量,这样,上转换油墨转换的可见光的强度就会很弱。此外,在实际应用中,红外激光光功率远大于上转换材料发出的可见光。所以红外激光也是光敏检测器件的强大“干扰源”。因此,对于红外上转换材料的检测器的探测灵敏度提出更高的要求。红外上转换材料的研究和应用得到大力发展的同时,与其相应的检测技术和手段还相对较为落后。红外功能转换材料的检测,要么依靠肉眼,要么需要烦琐昂贵的检测手段,如在光敏器件表面加多层滤光片、使用体积庞大的光电倍增管等。近年来,国内外一些研究机构也在积极开展上红外转换材料的探测方法研究,但是受限于目前市场上没有只对可见光(特别是黄光)具有高响应而对红外光几乎不响应的光敏器件,设计的测试仪器仍然较为复杂庞大目前只能用于实验室研究,更谈不上商业化的快速、自动化检测。
在红外光的照射下,红外上转换材料的发射光的谱带随材料不同略有变化,但是通常都在黄光波段,GaP系材料对黄光具有很高的灵敏性,其光响应窗口在550~600nm,而对红外光响应度基本为零,是制备红外上转换材料检测器的优良半导体材料。
中国专利CN1399351公开一种特别适合于长波与甚长波响应的高量子效率窄带光谱响应的量子阱红外探测器,包括:窄带滤光片,在窄带滤光片的一表面附着厚度为几个微米的量子阱薄层,在量子阱薄层上面还制备有一无序型光栅。其中还公开了各部分的制备过程和相关的工作模式。这类器件结构的优点是:将有效地提高器件的量子效率和工作温度,抑制器件的暗电流和背景光电流,进而大大提高器件的性能。
中国专利CN101494243公开一种光子晶体耦合窄带响应量子阱红外探测器。将光子晶体与量子阱红外探测单元相结合,光子晶体作为耦合单元直接嵌套在红外探测单元内。由于周期性的表面结构及光子晶体对光子态的调制,导致量子阱红外探测单元对特定波段的响应增强,而其它波段的响应受到抑制,达到窄波段探测的目的。与传统的量子阱探测器相比,这种探测器有如下优点:一、响应波段窄,可以通过光子晶体对光子态的调控以及量子阱本身结构控制,来调节响应峰值波长的位置。二、峰值波长探测效率高,由于实现了光子态的控制,探测效率得到了提高。三、便于用户导向型设计,光子态的调控提供了新的设计维度,更加有利于根据用户要求,优化产品响应波段匹配性能。
发明内容
本发明的目的在于提供一种用于红外上转换材料检测的镓砷磷/磷化镓黄光窄带探测器及其制造方法。
所述镓砷磷/磷化镓黄光窄带探测器(GaAsP/GaP PIN PD)设有外延片,所述外延片自下而上依次设有n型高掺杂磷化镓单晶衬底、非掺杂的磷化镓缓冲层、非掺杂的GaAs0.15P0.85光吸收层和非掺杂的磷化镓帽层,在外延片的n型高掺杂磷化镓单晶衬底的底部设n型欧姆接触电极;在外延片的非掺杂的磷化镓帽层上依次生长氮化硅掩膜、通过锌扩散形成的p型高掺杂扩散层、p型欧姆接触电极和氮化硅抗反射膜。
所述镓砷磷/磷化镓黄光窄带探测器的制造方法包括以下步骤:
1)将外延片清洗;
2)在外延片上生长氮化硅掩膜;
3)对氮化硅掩膜进行光刻干法腐蚀,裸露出扩散窗口;
4)以锌为扩散源进行开管锌扩散,形成P型高掺杂扩散层;
5)光刻,溅射p型欧姆接触电极金属和焊盘金属;
6)剥离出P型的欧姆接触电极图形和焊盘图形;
7)在流片背面溅射电极金属,生成N型的欧姆接触图形;
8)快速热退火,形成P-型欧姆接触电极和N-型欧姆接触电极;
9)溅射氮化硅抗反射膜;
10)光刻,干法腐蚀出焊盘窗口;
11)对流片进行测试、分类、划片、封装。
本发明具有容易制备、成本低廉、对红外光几乎不响应等优点,可用于钞票等的红外上转换材料检测,提高验钞机的验钞能力,具有潜在的广大市场。为了只吸收黄光,本发明在于采用GaAs0.15P0.85(镓砷磷)作为光吸收层。为了制备工艺较简单以及器件具有高增益、低暗电流、高量子效率、高稳定性等优点,本发明在于采用平面PIN结构。
附图说明
图1为本发明所述镓砷磷/磷化镓黄光窄带探测器实施例的平面结构示意图。
图2为本发明所述镓砷磷/磷化镓黄光窄带探测器实施例的相对光谱响应。在图2中,横坐标为入射光波长(nm),纵坐标为相对光谱响应。
图3为本发明所述镓砷磷/磷化镓黄光窄带探测器实施例的伏安特性。在图3中,横坐标为反向偏压/V,纵坐标为电流/A;●为550nm光入射电流,▲为暗电流。
具体实施方式
参见图1,所述镓砷磷/磷化镓黄光窄带探测器(GaAsP/GaP PIN PD)实施例设有外延片,所述外延片自下而上依次设有n型高掺杂磷化镓单晶衬底2、非掺杂的磷化镓缓冲层3、非掺杂的GaAs0.15P0.85光吸收层4和非掺杂的磷化镓帽层5,在外延片的n型高掺杂磷化镓单晶衬底2的底部设n型欧姆接触电极1;在外延片的非掺杂的磷化镓帽层5上依次生长氮化硅掩膜6、通过锌扩散形成的p型高掺杂扩散层7、p型欧姆接触电极8和氮化硅抗反射膜9。
所述镓砷磷/磷化镓黄光窄带探测器的制造方法包括以下步骤:
1)将外延片(参见图1)清洗;
2)在外延片上生长氮化硅掩膜6;
3)对氮化硅掩膜进行光刻干法腐蚀,裸露出扩散窗口;
4)以锌为扩散源进行开管锌扩散,形成P型高掺杂扩散层7;
5)光刻,溅射p型欧姆接触电极金属和焊盘金属;
6)剥离出P型的欧姆接触电极图形8和焊盘图形;
7)在流片背面溅射电极金属,生成N型的欧姆接触图形;
8)快速热退火,形成P-型欧姆接触电极8和N-型欧姆接触电极1;
9)溅射氮化硅抗反射膜9;
10)光刻,干法腐蚀出焊盘窗口;
11)对流片进行测试、分类、划片、封装。
根据镓砷磷/磷化镓黄光窄带探测器只能在黄光有响应对红外光不响应的要求对外延片结构参数进行设计,按照设计要求制备好金属有机化合物化学气相沉淀(MOCVD)生长的外延片。外延片依次经过甲苯→丙酮→乙醇→去离子水超声清洗后,用冷热去离子水反复冲洗,用氮气吹干备用。
用第一块光刻版和翻转胶,采用常规的光刻工艺,在氮化硅上光刻并通过干法刻蚀得到扩散窗口,供锌扩散之用。
将外延片装入炉中进行扩散,晶片和锌扩散源放置在石英舟。将石英舟装入单边封闭的石英管然后放入扩散炉。入炉时,片子靠近鼓风口一端,扩散源在扩散炉中央位置。然后抽真空通氮,反复多次,直到炉中氧气被排放干净。接着在氮气和氢气氛围升温扩散。扩散的恒温温度为550~580℃,恒温时间为20~70,N2和H2气流量分别为1L/min和0.2~0.25L/min。扩散时间到达后,进行鼓风水冷,直到炉子温度降到200℃然后关气,取出外延片。
对外延片进行正面黑漆保护,背面湿法腐蚀,腐蚀溶液用2HCl:1HNO3:2H2O,腐蚀时间8~10min。
用第二块光刻版进行光刻,然后溅射Zn50nm/Au220nm,浸泡丙酮剥离,得到p面电极和焊盘图形。
在外延片背面溅射25nmNi/50nm Ge/150nmAu作为n面电极。
在四管扩散炉中,恒温450℃退火8min。
用第3块光刻版,采用常规光刻,干法腐蚀出焊盘窗口。
然后进行测试、分类、划片等工序,完成整个芯片的制作过程。
本发明通过开管扩Zn工艺在550~580℃下实现了镓砷磷/磷化镓黄光窄带探测器(GaAsP/GaP PIN PD)光电探测器,这种镓砷磷/磷化镓黄光窄带光电探测器,反向偏压为5V时候的暗电流<4nA、光谱响应的峰值处于550nm,对红外光几乎不响应。
所述镓砷磷/磷化镓黄光窄带探测器实施例的相对光谱响应图2所示。
所述镓砷磷/磷化镓黄光窄带探测器实施例的伏安特性如图3所示。
Claims (2)
1.镓砷磷/磷化镓黄光窄带探测器,其特征在于设有外延片,所述外延片自下而上依次设有n型高掺杂磷化镓单晶衬底、非掺杂的磷化镓缓冲层、非掺杂的GaAs0.15P0.85光吸收层和非掺杂的磷化镓帽层,在外延片的n型高掺杂磷化镓单晶衬底的底部设n型欧姆接触电极;在外延片的非掺杂的磷化镓帽层上依次生长氮化硅掩膜、通过锌扩散形成的p型高掺杂扩散层、p型欧姆接触电极和氮化硅抗反射膜。
2.如权利要求1所述镓砷磷/磷化镓黄光窄带探测器的制造方法,其特征在于包括以下步骤:
1)将外延片清洗;
2)在外延片上生长氮化硅掩膜;
3)对氮化硅掩膜进行光刻干法腐蚀,裸露出扩散窗口;
4)以锌为扩散源进行开管锌扩散,形成P型高掺杂扩散层;
5)光刻,溅射p型欧姆接触电极金属和焊盘金属;
6)剥离出P型的欧姆接触电极图形和焊盘图形;
7)在流片背面溅射电极金属,生成N型的欧姆接触图形;
8)快速热退火,形成P-型欧姆接触电极和N-型欧姆接触电极;
9)溅射氮化硅抗反射膜;
10)光刻,干法腐蚀出焊盘窗口;
11)对流片进行测试、分类、划片、封装。
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CN107154447A (zh) * | 2017-05-24 | 2017-09-12 | 中国电子科技集团公司第十三研究所 | 一种硅基探测器及其制备方法 |
WO2019100380A1 (zh) * | 2017-11-27 | 2019-05-31 | 清华大学 | 上转换器件和材料及其制造方法 |
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JPH04309270A (ja) * | 1991-04-08 | 1992-10-30 | Sumitomo Electric Ind Ltd | タンデム型太陽電池の製造方法 |
CN1173741A (zh) * | 1996-07-18 | 1998-02-18 | 昭和电工株式会社 | 用于磷化镓发光元件的外延晶片及磷化镓发光元件 |
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US4582952A (en) * | 1984-04-30 | 1986-04-15 | Astrosystems, Inc. | Gallium arsenide phosphide top solar cell |
JPH04309270A (ja) * | 1991-04-08 | 1992-10-30 | Sumitomo Electric Ind Ltd | タンデム型太陽電池の製造方法 |
CN1173741A (zh) * | 1996-07-18 | 1998-02-18 | 昭和电工株式会社 | 用于磷化镓发光元件的外延晶片及磷化镓发光元件 |
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CN107154447A (zh) * | 2017-05-24 | 2017-09-12 | 中国电子科技集团公司第十三研究所 | 一种硅基探测器及其制备方法 |
CN107154447B (zh) * | 2017-05-24 | 2024-01-30 | 中国电子科技集团公司第十三研究所 | 一种硅基探测器及其制备方法 |
WO2019100380A1 (zh) * | 2017-11-27 | 2019-05-31 | 清华大学 | 上转换器件和材料及其制造方法 |
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