CN102808212A - Method for preparing n type pseudo ternary Er-doped thermoelectric material by using mechanical alloying hot pressing method - Google Patents
Method for preparing n type pseudo ternary Er-doped thermoelectric material by using mechanical alloying hot pressing method Download PDFInfo
- Publication number
- CN102808212A CN102808212A CN2012103186287A CN201210318628A CN102808212A CN 102808212 A CN102808212 A CN 102808212A CN 2012103186287 A CN2012103186287 A CN 2012103186287A CN 201210318628 A CN201210318628 A CN 201210318628A CN 102808212 A CN102808212 A CN 102808212A
- Authority
- CN
- China
- Prior art keywords
- simple substance
- doped
- thermoelectric material
- type thermoelectric
- mechanical alloying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Powder Metallurgy (AREA)
Abstract
The invention provides a method for preparing an n type pseudo ternary Er-doped thermoelectric material by using a mechanical alloying hot pressing method, relates to a preparation method of a thermoelectric material, and aims to solve the technical problems that the prior thermoelectric material is easy to split and has poor mechanical performance and low thermoelectric performance. The method provided by the invention comprises following steps: a simple substance Bi, a simple substance Sb, a simple substance Te and a simple substance Se are mixed and then a rare earth element Er is added to the simple substances, so as to obtain a mixture; the mixture is ground and then ball-milled, so as to obtain pseudo ternary Er-doped powder; and afterwards, the pseudo ternary Er-doped powder is hot-pressed, and then the pseudo ternary Er-doped thermoelectric material is obtained. In the pressing and sintering process, phenomena of grain growth and recrystallization can be produced by powder particles as well, so that the electric conductivity (of which the optimal value is 162/omega.cm) of the material can be beneficially increased; due to the doping of the rare earth element Er, an energy band structure of the material can be changed, a large number of lattice defects are formed at the inner part of the material and the thermal conductivity of the material can be beneficially reduced, thereby obtaining the novel thermoelectric material of which the thermoelectric performance approaches that of oriented crystal.
Description
Technical field
The present invention relates to a kind of preparation method of thermoelectric material.
Background technology
Bi
2Te
3The crystalline structure of base thermoelectricity material does
Belong to trigonal system, its structure can be considered hexagon stratiform structure, and its cleavage surface is along perpendicular to crystal C axle (001) face, and between two adjacent Te atomic shells, cleavage takes place the most easily.
Bi
2Te
3Base thermoelectricity material is because special laminate structure; Crystal is easy between the Te-Te atomic shell, splitting take place, and the cleavage surface of material can cause its bad mechanical property, and loss is serious in the course of processing; Not only improve the production cost of device, also reduced the device reliability of operation simultaneously.
Bi
2Te
3The traditional method of base thermoelectricity material has crystal pulling method, Bridgman method and melting-zone melting method; Adopt the thermoelectric material of these method preparations to be mostly single crystal or oriented crystal; The thermoelectricity capability of these materials has higher thermoelectric figure of merit on a certain direction; But its mechanical property is relatively poor, easily along its cleavage surface splitting.
Summary of the invention
The present invention is prone to splitting, bad mechanical property, technical problem that thermoelectricity capability is low in order to solve existing thermoelectric material, and a kind of method for preparing the counterfeit ternary er-doped of n type thermoelectric material with the mechanical alloying pressure sintering is provided.
The method for preparing the counterfeit ternary er-doped of n type thermoelectric material with the mechanical alloying pressure sintering is following:
One, be 180: 2: 285 in Bi element, Sb element, Te element and Se element mol ratio: 15 ratio takes by weighing simple substance Bi, simple substance Sb, simple substance Te and simple substance Se; Simple substance Bi, simple substance Sb, simple substance Te and simple substance Se are mixed, add rare earth element er then, get mixture; The add-on of rare earth element er is 0.1%～2.0% of simple substance Bi, simple substance Sb, simple substance Te, simple substance Se and a rare earth element er total mass; It is 1mm～10mm that mixture is crushed to particle diameter, is ball-milling medium with the sherwood oil, is that 410r/min, ball-to-powder weight ratio are under 10: 1 the condition at rotating speed; Mechanical ball milling 100h obtains counterfeit ternary and mixes the Er alloy powder;
Two, be that 177MPa, temperature are under 180 ℃～260 ℃ the condition at pressure; Counterfeit ternary is mixed Er alloy powder pressurize 20min; Obtaining diameter is that 20mm, height are the cylindrical hot pressing block materials of 5～8mm; Be cut into the rectangular parallelepiped of 3mm * 3mm * 10mm then, promptly get the counterfeit ternary er-doped of n type thermoelectric material.
The purity of the Bi of simple substance described in the step 1 is 99.99%.The purity of the Sb of simple substance described in the step 1 is 99.99%.The purity of the Te of simple substance described in the step 1 is 99.99%.The purity of the Se of simple substance described in the step 1 is 99.99%.The purity of the Er of simple substance described in the step 1 is 99.99%.
The mechanical alloying method mainly is to utilize the mode of high-energy ball milling; The element powders of desiring alloying is mixed; In the operation of high-energy ball milling equipment high speed, rotary machine can be passed to powder, and impact under the cold condition, extruding, disrumpent feelings repeatedly in turning course; Making it becomes the ultrafine particle that disperse distributes, and realizes solid-state alloying down.Mechanical alloying method technology is simple, and preparation efficiency is high, and can prepare refractory metal or the alloy ultrafine powder material that ordinary method is difficult to obtain.Because the pressure sintering heating and pressurizing carries out simultaneously, powder is in the thermoplasticity state, helps the carrying out of the contact diffusion process of atom in the particle, thus forming pressure be merely cold pressing 1/10; Can also be under lower sintering temperature, shorten sintering time, obtain that density is higher, mechanical property and the good thermoelectric material of electric property.In addition, but at the ceramic product that need not to add production ultra-high purity under the situation of any sintering aid or shaping assistant.The present invention combines the advantage of two kinds of methods, has improved the mechanical property of material, has reduced the requirement of material prepn condition.In addition, the energy band structure that the doping of rare earth Er can decorative material also increases the band gap of material, thereby improves the thermoelectricity capability of material.
The invention has the advantages that:
1, mechanical alloying method is converted into chemical energy with mechanical energy in the mechanical ball milling process, can at room temperature realize the chemical combination of element, prepares alloy ultrafine powder material.
2, powder particle can produce grain growth and recrystallization phenomenon equally in the compacting sintering process, and (optimum value is 162 Ω to help improving conductivity of electrolyte materials
-1Cm
-1); Doping through rare earth Er can change the energy band structure of material and form the thermal conductivity that a large amount of lattice imperfections helps reducing material at material internal, levels off to the novel thermoelectric material of oriented crystal thereby obtain thermoelectricity capability.
3, can effectively avoid Bi
2Te
3Because the volatilization of Bi and Te element causes the problem that the material composition segregation causes material property to reduce, and material has the thermoelectric power approaching with oriented crystal, its Seebeck coefficient optimum value can reach 158 μ VK to base thermoelectricity material under molten state
-1
4, simple, the easy handling of preparation technology of the present invention, preparation condition are less demanding, can effectively reduce production costs.
Description of drawings
Fig. 1 is an XRD figure of mixing the counterfeit ternary alloy powder of the forward and backward n type of Er in the experiment one, and a is the XRD curve of the counterfeit ternary alloy powder of n type of the Er that do not mix among the figure, and b is the XRD curve that counterfeit ternary is mixed the Er alloy powder;
Fig. 2 is the XRD figure that counterfeit ternary is mixed Er alloy powder and the counterfeit ternary er-doped of n type thermoelectric material in the experiment two, and a is the XRD curve that counterfeit ternary is mixed the Er alloy powder among the figure, and b is the XRD curve of the counterfeit ternary er-doped of n type thermoelectric material;
Fig. 3 is that the counterfeit ternary of gained is mixed 10000 times of photos of Er alloy powder amplification in the experiment two;
Fig. 4 is that the counterfeit ternary of gained is mixed 10000 times of photos of Er alloy powder amplification in the experiment three;
Fig. 5 is the SEM photo of the counterfeit ternary er-doped of gained n type thermoelectric material in the experiment one;
Fig. 6 is the SEM photo of the counterfeit ternary er-doped of gained n type thermoelectric material in the experiment two.
Embodiment
Technical scheme of the present invention is not limited to following cited embodiment, also comprises the arbitrary combination between each embodiment.
Embodiment one: this embodiment is following with the method that the mechanical alloying pressure sintering prepares the counterfeit ternary er-doped of n type thermoelectric material:
One, be 180: 2: 285 in Bi element, Sb element, Te element and Se element mol ratio: 15 ratio takes by weighing simple substance Bi, simple substance Sb, simple substance Te and simple substance Se; Simple substance Bi, simple substance Sb, simple substance Te and simple substance Se are mixed, add rare earth element er then, get mixture; The add-on of rare earth element er is 0.1%～2.0% of simple substance Bi, simple substance Sb, simple substance Te, simple substance Se and a rare earth element er total mass; It is 1mm～10mm that mixture is crushed to particle diameter, is ball-milling medium with the sherwood oil, is that 410r/min, ball-to-powder weight ratio are under 10: 1 the condition at rotating speed; Mechanical ball milling 100h obtains counterfeit ternary and mixes the Er alloy powder;
Two, be that 177MPa, temperature are under 180 ℃～260 ℃ the condition at pressure; Counterfeit ternary is mixed Er alloy powder pressurize 20min; Obtaining diameter is that 20mm, height are the cylindrical hot pressing block materials of 5～8mm; Be cut into the rectangular parallelepiped of 3mm * 3mm * 10mm then, promptly get the counterfeit ternary er-doped of n type thermoelectric material.
The counterfeit ternary er-doped of the n type thermoelectric material that this embodiment obtains is 162 Ω with reference to national its specific conductivity optimum value of ministerial standard test
-1Cm
-1), Seebeck coefficient optimum value is 158 μ VK
-1
Embodiment two: this embodiment and embodiment one are different is that the purity of the Bi of simple substance described in the step 1 is 99.99%.Other is identical with embodiment one.
Embodiment three: this embodiment is different with embodiment one or two is that the purity of the Sb of simple substance described in the step 1 is 99.99%.Other is identical with embodiment one or two.
Embodiment four: this embodiment is different with one of embodiment one to three is that the purity of the Te of simple substance described in the step 1 is 99.99%.Other is identical with one of embodiment one to three.
Embodiment five: this embodiment is different with one of embodiment one to four is that the purity of the Se of simple substance described in the step 1 is 99.99%.Other is identical with one of embodiment one to four.
Embodiment six: this embodiment is different with one of embodiment one to five is that the purity of the Er of simple substance described in the step 1 is 99.99%.Other is identical with one of embodiment one to five.
Embodiment seven: this embodiment is different with one of embodiment one to six is that the add-on of rare earth element er described in the step 1 is 0.5% of simple substance Bi, simple substance Sb, simple substance Te, simple substance Se and a rare earth element er total mass.Other is identical with one of embodiment one to six.
Embodiment eight: this embodiment is different with one of embodiment one to six is that the add-on of rare earth element er described in the step 1 is 1.52% of simple substance Bi, simple substance Sb, simple substance Te, simple substance Se and a rare earth element er total mass.Other is identical with one of embodiment one to six.
Embodiment nine: this embodiment is different with one of embodiment one to six is to be pressurize under 200 ℃ the condition in temperature in the step 2.Other is identical with one of embodiment one to six.
Embodiment ten: this embodiment is different with one of embodiment one to six is to be pressurize under 240 ℃ the condition in temperature in the step 2.Other is identical with one of embodiment one to six.
Adopt following experimental verification effect of the present invention:
Experiment one:
The method for preparing the counterfeit ternary er-doped of n type thermoelectric material with the mechanical alloying pressure sintering is following:
One, be 180: 2: 285 in Bi element, Sb element, Te element and Se element mol ratio: 15 ratio takes by weighing simple substance Bi, simple substance Sb, simple substance Te and simple substance Se; Simple substance Bi, simple substance Sb, simple substance Te and simple substance Se are mixed, add rare earth element er then, get mixture; The add-on of rare earth element er is 2.0% of simple substance Bi, simple substance Sb, simple substance Te, simple substance Se and a rare earth element er total mass; It is 1mm that mixture is crushed to particle diameter, is ball-milling medium with the sherwood oil, is that 410r/min, ball-to-powder weight ratio are under 10: 1 the condition at rotating speed; Mechanical ball milling 100h obtains counterfeit ternary and mixes the Er alloy powder;
Two, be that 177MPa, temperature are under 180 ℃ the condition at pressure; Counterfeit ternary is mixed Er alloy powder pressurize 20min; Obtaining diameter is that 20mm, height are the cylindrical hot pressing block materials of 5mm, is cut into the rectangular parallelepiped of 3mm * 3mm * 10mm then, promptly gets the counterfeit ternary er-doped of n type thermoelectric material.
The peak type of being found out curve a, b by Fig. 1 is consistent, and peak position is relative, does not find the simple substance diffraction peak of rare earth element er among the curve b, and this shows that rare earth Er and counterfeit ternary solid solution have been realized alloying fully behind the 100h ball milling.
Experiment two:
The method for preparing the counterfeit ternary er-doped of n type thermoelectric material with the mechanical alloying pressure sintering is following:
One, be 180: 2: 285 in Bi element, Sb element, Te element and Se element mol ratio: 15 ratio takes by weighing simple substance Bi, simple substance Sb, simple substance Te and simple substance Se; Simple substance Bi, simple substance Sb, simple substance Te and simple substance Se are mixed, add rare earth element er then, get mixture; The add-on of rare earth element er is 2.0% of simple substance Bi, simple substance Sb, simple substance Te, simple substance Se and a rare earth element er total mass; It is 10mm that mixture is crushed to particle diameter, is ball-milling medium with the sherwood oil, is that 410r/min, ball-to-powder weight ratio are under 10: 1 the condition at rotating speed; Mechanical ball milling 100h obtains counterfeit ternary and mixes the Er alloy powder;
Two, be that 177MPa, temperature are under 260 ℃ the condition at pressure; Counterfeit ternary is mixed Er alloy powder pressurize 20min; Obtaining diameter is that 20mm, height are the cylindrical hot pressing block materials of 5mm, is cut into the rectangular parallelepiped of 3mm * 3mm * 10mm then, promptly gets the counterfeit ternary er-doped of n type thermoelectric material.
Can know that by Fig. 2 the main diffraction peak-to-peak of comparing the counterfeit ternary er-doped of n type thermoelectric material with the XRD curve that counterfeit ternary is mixed the Er alloy powder obviously increases by force, peak shape narrows down, and the d value reduces.The counterfeit ternary er-doped of n type thermoelectric material master diffraction peak-to-peak increases interpret sample grain growth in hot pressing by force; The crystal degree is strengthened; Main diffraction peak d value reduces to show that the material internal interatomic distance reduces under the effect of hot pressing pressure; The energy band structure of material changes, thereby causes the variation of material internal carrier transport properties.
Experiment three:
The method for preparing the counterfeit ternary er-doped of n type thermoelectric material with the mechanical alloying pressure sintering is following:
One, be 180: 2: 285 in Bi element, Sb element, Te element and Se element mol ratio: 15 ratio takes by weighing simple substance Bi, simple substance Sb, simple substance Te and simple substance Se; Simple substance Bi, simple substance Sb, simple substance Te and simple substance Se are mixed, add rare earth element er then, get mixture; The add-on of rare earth element er is 2.0% of simple substance Bi, simple substance Sb, simple substance Te, simple substance Se and a rare earth element er total mass; It is 5mm that mixture is crushed to particle diameter, is ball-milling medium with the sherwood oil, is that 410r/min, ball-to-powder weight ratio are under 10: 1 the condition at rotating speed; Mechanical ball milling 50h obtains counterfeit ternary and mixes the Er alloy powder;
Two, be that 177MPa, temperature are under 260 ℃ the condition at pressure; Counterfeit ternary is mixed Er alloy powder pressurize 20min; Obtaining diameter is that 20mm, height are the cylindrical hot pressing block materials of 5mm, is cut into the rectangular parallelepiped of 3mm * 3mm * 10mm then, promptly gets the counterfeit ternary er-doped of n type thermoelectric material.
The visible little crystal grain that a large amount of 50～100nm magnitudes are arranged from Fig. 4, grain form is the synusia shape.Compare with 4 figure, grain-size obviously reduces among Fig. 3, and in 5～50nm order magnitude range, bigger particle is the polymer of many small grains among the figure greatly, and this explanation is along with the increase of ball milling time, and grain-size reduces, and more even.
There is a large amount of spaces in the sample that obtains under the situation like visible 180 ℃ of Fig. 5; Quantity reduces and obviously diminish simultaneously through the inner space of 260 ℃ of hot pressed samples among Fig. 6, and intercrystalline combines fine and close more. and The above results is illustrated in that higher hot pressing temperature helps growing up of material internal crystal grain and recrystallization under the identical situation of pressing pressure.
Claims (10)
1. the method for preparing the counterfeit ternary er-doped of n type thermoelectric material with the mechanical alloying pressure sintering, the method that it is characterized in that preparing with the mechanical alloying pressure sintering the counterfeit ternary er-doped of n type thermoelectric material is following:
One, be 180: 2: 285 in Bi element, Sb element, Te element and Se element mol ratio: 15 ratio takes by weighing simple substance Bi, simple substance Sb, simple substance Te and simple substance Se; Simple substance Bi, simple substance Sb, simple substance Te and simple substance Se are mixed, add rare earth element er then, get mixture; The add-on of rare earth element er is 0.1%～2.0% of simple substance Bi, simple substance Sb, simple substance Te, simple substance Se and a rare earth element er total mass; It is 1mm～10mm that mixture is crushed to particle diameter, is ball-milling medium with the sherwood oil, is that 410r/min, ball-to-powder weight ratio are under 10: 1 the condition at rotating speed; Mechanical ball milling 100h obtains counterfeit ternary and mixes the Er alloy powder;
Two, be that 177MPa, temperature are under 180 ℃～260 ℃ the condition at pressure; Counterfeit ternary is mixed Er alloy powder pressurize 20min; Obtaining diameter is that 20mm, height are the cylindrical hot pressing block materials of 5～8mm; Be cut into the rectangular parallelepiped of 3mm * 3mm * 10mm then, promptly get the counterfeit ternary er-doped of n type thermoelectric material.
2. prepare the method for the counterfeit ternary er-doped of n type thermoelectric material according to claim 1 is said with the mechanical alloying pressure sintering, the purity that it is characterized in that the Bi of simple substance described in the step 1 is 99.99%.
3. prepare the method for the counterfeit ternary er-doped of n type thermoelectric material according to claim 1 is said with the mechanical alloying pressure sintering, the purity that it is characterized in that the Sb of simple substance described in the step 1 is 99.99%.
4. prepare the method for the counterfeit ternary er-doped of n type thermoelectric material according to claim 1 is said with the mechanical alloying pressure sintering, the purity that it is characterized in that the Te of simple substance described in the step 1 is 99.99%.
5. prepare the method for the counterfeit ternary er-doped of n type thermoelectric material according to claim 1 is said with the mechanical alloying pressure sintering, the purity that it is characterized in that the Se of simple substance described in the step 1 is 99.99%.
6. prepare the method for the counterfeit ternary er-doped of n type thermoelectric material according to claim 1 is said with the mechanical alloying pressure sintering, the purity that it is characterized in that the Er of simple substance described in the step 1 is 99.99%.
7. saidly prepare the method for the counterfeit ternary er-doped of n type thermoelectric material with the mechanical alloying pressure sintering according to claim 1,2,3,4,5 or 6, the add-on that it is characterized in that rare earth element er described in the step 1 is 0.5% of simple substance Bi, simple substance Sb, simple substance Te, simple substance Se and a rare earth element er total mass.
8. saidly prepare the method for the counterfeit ternary er-doped of n type thermoelectric material with the mechanical alloying pressure sintering according to claim 1,2,3,4,5 or 6, the add-on that it is characterized in that rare earth element er described in the step 1 is 1.52% of simple substance Bi, simple substance Sb, simple substance Te, simple substance Se and a rare earth element er total mass.
9. saidly prepare the method for the counterfeit ternary er-doped of n type thermoelectric material according to claim 1,2,3,4,5 or 6, it is characterized in that in the step 2 that in temperature be pressurize under 200 ℃ the condition with the mechanical alloying pressure sintering.
10. saidly prepare the method for the counterfeit ternary er-doped of n type thermoelectric material according to claim 1,2,3,4,5 or 6, it is characterized in that in the step 2 that in temperature be pressurize under 240 ℃ the condition with the mechanical alloying pressure sintering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103186287A CN102808212A (en) | 2012-08-31 | 2012-08-31 | Method for preparing n type pseudo ternary Er-doped thermoelectric material by using mechanical alloying hot pressing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103186287A CN102808212A (en) | 2012-08-31 | 2012-08-31 | Method for preparing n type pseudo ternary Er-doped thermoelectric material by using mechanical alloying hot pressing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102808212A true CN102808212A (en) | 2012-12-05 |
Family
ID=47232079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012103186287A Pending CN102808212A (en) | 2012-08-31 | 2012-08-31 | Method for preparing n type pseudo ternary Er-doped thermoelectric material by using mechanical alloying hot pressing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102808212A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104828789A (en) * | 2015-03-24 | 2015-08-12 | 武汉理工大学 | A dynamic loading synthetic method for Ag2X compounds |
| CN107119321A (en) * | 2017-04-14 | 2017-09-01 | 武汉理工大学 | Ternary semiconductor PbSnS3It is nanocrystalline and preparation method thereof |
| CN108103336A (en) * | 2016-11-25 | 2018-06-01 | 河南城建学院 | Bi1-xSbxThermoelectric material and preparation method thereof |
| CN112645710A (en) * | 2020-12-11 | 2021-04-13 | 哈尔滨石油学院 | Method for improving thermoelectric performance of bismuth telluride-based pseudo-ternary thermoelectric material by co-doping Er and Ag |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5763293A (en) * | 1996-03-04 | 1998-06-09 | Yamaha Corporation | Process of fabricating a thermoelectric module formed of V-VI group compound semiconductor including the steps of rapid cooling and hot pressing |
| JP2003089804A (en) * | 2001-09-18 | 2003-03-28 | Mitsubishi Heavy Ind Ltd | METHOD FOR MANUFACTURING Bi-Te-BASED THERMOELECTRIC MATERIAL |
| CN1768986A (en) * | 2005-09-23 | 2006-05-10 | 北京科技大学 | High pressure method for preparing Bi-Te alloy series thermoelectric material |
| CN101269800A (en) * | 2008-04-30 | 2008-09-24 | 清华大学 | Inhomogeneous Bi2Te2 pyroelectric material and preparation |
| CN101549405A (en) * | 2009-05-19 | 2009-10-07 | 燕山大学 | High-pressure sintering preparation method of high-densification high-performance nano crystal block thermoelectric material |
| CN101786162A (en) * | 2010-01-19 | 2010-07-28 | 武汉科技大学 | Preparation method of bismuth telluride based bulk nano crystalline thermoelectric material |
-
2012
- 2012-08-31 CN CN2012103186287A patent/CN102808212A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5763293A (en) * | 1996-03-04 | 1998-06-09 | Yamaha Corporation | Process of fabricating a thermoelectric module formed of V-VI group compound semiconductor including the steps of rapid cooling and hot pressing |
| JP2003089804A (en) * | 2001-09-18 | 2003-03-28 | Mitsubishi Heavy Ind Ltd | METHOD FOR MANUFACTURING Bi-Te-BASED THERMOELECTRIC MATERIAL |
| CN1768986A (en) * | 2005-09-23 | 2006-05-10 | 北京科技大学 | High pressure method for preparing Bi-Te alloy series thermoelectric material |
| CN101269800A (en) * | 2008-04-30 | 2008-09-24 | 清华大学 | Inhomogeneous Bi2Te2 pyroelectric material and preparation |
| CN101549405A (en) * | 2009-05-19 | 2009-10-07 | 燕山大学 | High-pressure sintering preparation method of high-densification high-performance nano crystal block thermoelectric material |
| CN101786162A (en) * | 2010-01-19 | 2010-07-28 | 武汉科技大学 | Preparation method of bismuth telluride based bulk nano crystalline thermoelectric material |
Non-Patent Citations (1)
| Title |
|---|
| 曹显莹: "赝三元机械合金化掺Er热电材料的制备与性能研究", 《中国优秀硕士学位论文全文数据库 基础科学辑》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104828789A (en) * | 2015-03-24 | 2015-08-12 | 武汉理工大学 | A dynamic loading synthetic method for Ag2X compounds |
| CN108103336A (en) * | 2016-11-25 | 2018-06-01 | 河南城建学院 | Bi1-xSbxThermoelectric material and preparation method thereof |
| CN108103336B (en) * | 2016-11-25 | 2019-06-28 | 河南城建学院 | Bi1-xSbxThermoelectric material and preparation method thereof |
| CN107119321A (en) * | 2017-04-14 | 2017-09-01 | 武汉理工大学 | Ternary semiconductor PbSnS3It is nanocrystalline and preparation method thereof |
| CN112645710A (en) * | 2020-12-11 | 2021-04-13 | 哈尔滨石油学院 | Method for improving thermoelectric performance of bismuth telluride-based pseudo-ternary thermoelectric material by co-doping Er and Ag |
| CN112645710B (en) * | 2020-12-11 | 2022-08-02 | 哈尔滨石油学院 | Method for improving thermoelectric performance of bismuth telluride-based pseudo-ternary thermoelectric material by co-doping Er and Ag |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100491554C (en) | Method for preparing fine grain preferred tropism Bi2Te3 thermoelectric materials | |
| CN102931335B (en) | A kind of Graphene is combined thermoelectric material of cobalt stibide based skutterudite and preparation method thereof | |
| CN103910339B (en) | Ultrafast preparation method of high-performance BiCuSeO-based blocky thermoelectric material having nanometer layered structure | |
| US20110120517A1 (en) | Synthesis of High-Efficiency Thermoelectric Materials | |
| CN102031416B (en) | Composite material of skutterudite filling substrate and preparation method thereof | |
| Savary et al. | Spark plasma sintering of fine Mg2Si particles | |
| CN102808212A (en) | Method for preparing n type pseudo ternary Er-doped thermoelectric material by using mechanical alloying hot pressing method | |
| KR100795194B1 (en) | Method for fabricating thermoelectric material by mechanical milling-mixing and thermoelectric material fabricated thereby | |
| CN102694116A (en) | Method for preparing thermoelectric material with P-type nano-structure and bismuth telluride matrix | |
| CN111876632A (en) | Bi for rapidly preparing high-orientation high-power factor2Te3Method for producing thermoelectric material | |
| CN104477991A (en) | Preparation method of low-thermal-conductivity CuSbS<2+x> thermoelectric material | |
| CN104263980A (en) | Method for rapidly preparing high-performance ZrNiSn block thermoelectric material | |
| CN107994115A (en) | A kind of Pb/Ba codopes BiCuSeO thermoelectric materials and preparation method thereof | |
| CN101269800A (en) | Inhomogeneous Bi2Te2 pyroelectric material and preparation | |
| CN108878634B (en) | Y-doped pseudo-ternary semiconductor refrigeration material and preparation method thereof | |
| JP2013219308A (en) | Bismuth-tellurium based thermoelectric material | |
| CN101985776A (en) | Method for preparing bismuth telluride-based thermoelectric material | |
| CN104230344A (en) | Low-temperature sintering preparation method of AlN ceramic added with multi-element sintering aid | |
| CN100427631C (en) | Nano SiC granule composite CoSb3 base thermoelectric material and its preparing process | |
| CN111446357A (en) | Preparation of Cu2Method for Se thermoelectric material | |
| JP4592209B2 (en) | Method for producing crystal-oriented bulk ZnO-based sintered material and thermoelectric conversion device produced thereby | |
| CN102925729A (en) | Method of preparing n-type counterfeit ternary erbium-doped thermoelectric material by utilizing mechanical alloying cold pressing sintering method | |
| CN109256459B (en) | Multi-metal co-doped GeSe-based thermoelectric material and preparation method thereof | |
| KR101851736B1 (en) | The thermoelectric device having improved thermoelectric efficiency and manufacturing method thereof | |
| KR101409404B1 (en) | Manufacturing method for thermoelectric material and thermelectric material manufactured thereby |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C05 | Deemed withdrawal (patent law before 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121205 |