CN102801295A - Fault protection circuit and method for submodule of modular multilevel converter - Google Patents
Fault protection circuit and method for submodule of modular multilevel converter Download PDFInfo
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- CN102801295A CN102801295A CN2012102827683A CN201210282768A CN102801295A CN 102801295 A CN102801295 A CN 102801295A CN 2012102827683 A CN2012102827683 A CN 2012102827683A CN 201210282768 A CN201210282768 A CN 201210282768A CN 102801295 A CN102801295 A CN 102801295A
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Abstract
The invention provides a fault protection circuit for a submodule of a modular multilevel converter. When a second switch tube T2 is on, and a first switch tube T1 is off and is short circuited, a submodule controller 101 controls the second switch tube T2 to block the conduction between a pulse and a second thyristor D4, and sends an off signal to a by-pass switch at the same time. Due to the long action time of the by-pass switch K, the conduction of the second thyristor D4 can implement the rapid bypass of a fault submodule. According to the fault protection circuit and method for the submodule of the modular multilevel converter provided by the invention, when the second switch tube T2 is on, and the first switch tube T1 is short circuited, fault current can be prevented from expanding to a system effectively, so that the voltage stability at a direct current side is ensured and the requirements of the system on high reliability and safe operation are met.
Description
Technical field
The invention belongs to the flexible DC power transmission technical field, relate in particular to a kind of submodule fault secure circuit and method of modularization multi-level converter.
Background technology
The flexible DC power transmission technology is a kind of novel high voltage dc transmission technology based on voltage source converter; Rely on it not have the commutation failure problem, can realize broader applications between the low superiority of quick decoupling zero control and the harmonic content of meritorious and reactive power in distributed power generation be incorporated into the power networks, fields such as asynchronous interconnected, the multiterminal direct current transportation of AC system and urban power distribution network increase-volume.
Modularization multi-level converter receives very big concern in recent years as one of voltage-source type converter topology that realizes the flexible DC power transmission through engineering approaches.Its basic circuit unit is a submodule; Structural representation is as shown in Figure 1; Comprise: two IGBT switching tubes (T1 and T2), with the diode (D1 and D2) of each IGBT reverse parallel connection, with the T2 reverse parallel connection thyristor (D3), by-pass switch (K), grading resistor (R), support electric capacity (C) etc.; The upper strata control system turns on and off through control T1, T2's, submodule output Uc or 0 (Uc is for supporting condenser voltage, i.e. dc voltage).Wherein, the function of D3 for after the DC side failed because, circuit breaker carries out triggering and conducting in during this period of time before breaking off, and to bear the overcurrent that should flow through diode, plays the effect of protection fly-wheel diode; K can realize the quick switching of redundant sub and malfunctioning module, in case and closure promptly can not break off through control, have only when the current transformer interruption maintenance through hand-reset; R is that sub-capacitance voltage provides a static state voltage equipoise effect, also can be used for current transformer and shuts down back support capacitor discharge.Input through controlling each submodule and just withdraw from and can generate stable AC and VD, thus the output voltage and the power grade of converter changed.
But, when submodule is in the operating state that cuts out that T1 turn-offs, T2 opens, this moment of short circuit if T1 breaks down; Be other components and parts in the protection submodule; The submodule controller can send the pulse blocking signal to T2, closed K, bypass fault submodule; System power i directly flows through from K, no longer gets into submodule.But the reaction time that occurs to T2 pulse blocking from fault is about 10us; And the closing time of K is about about 10ms; Because the operate time of K is longer, this moment, fault current diffused to system, will influence same brachium pontis or other bridge arm voltages and change in current.
Summary of the invention
In view of this; The object of the present invention is to provide a kind of submodule fault secure circuit and method of modularization multi-level converter, be thyristor D4 of thyristor D3 reverse parallel connection, synchronous conducting when opening T2 pulse blocking and closed K; Submodule input current i is through the thyristor D4 change of current; With the rapid bypass of this fault submodule,, faster than by-pass switch because the thyristor reaction time is close with T2; Can avoid like this fault current is diffused in the converter, ensured system accurately, safety and reliability service.
A kind of submodule fault secure circuit of modularization multi-level converter comprises: support capacitor C, grading resistor R, first switch transistor T 1, second switch pipe T2, the first diode D1, the second diode D2, the first thyristor D3, by-pass switch K, the second thyristor D4 and submodule controller 101;
Wherein, the collector electrode C1 of said first switch transistor T 1 links to each other with the emitter E 2 of said second switch pipe T2 through supporting capacitor C, and the collector electrode C2 of said second switch pipe T2 links to each other with the emitter E 1 of said first switch transistor T 1;
Said grading resistor R is parallelly connected with said support capacitor C;
The emitter E 1 of said first switch transistor T 1 links to each other with the positive pole of the said first diode D1, and the collector electrode C1 of said first switch transistor T 1 links to each other with the negative pole of the said first diode D1;
The emitter E 2 of said second switch pipe T2 links to each other with the positive pole of the said second diode D2, and the collector electrode C2 of said second switch pipe T2 links to each other with the negative pole of the said second diode D2;
The emitter E 2 of said second switch pipe T2 links to each other with the anode of the said first thyristor D3, and the collector electrode C2 of said second switch pipe T2 links to each other with the negative electrode of the said first thyristor D3;
The collector electrode C2 of said second switch pipe T2 links to each other with the anode of the said second thyristor D4, and the emitter E 2 of said second switch pipe T2 links to each other with the negative electrode of the said second thyristor D4;
Said by-pass switch K is parallelly connected with the said second thyristor D4;
Said submodule controller 101; Be used for monitoring in real time and judge each electric parameters of submodule and malfunction; When said second switch pipe T2 opens, during first switch transistor T, 1 short trouble, the closed closure signal of the locking signal that sends control second switch pipe T2 locking pulse and control by-pass switch K is with said submodule bypass.
Above-mentioned submodule fault secure circuit; Preferably; Said second switch pipe T2 opens, during first switch transistor T, 1 short trouble, when said submodule controller 101 monitors said submodule electric parameters when satisfying first preset value or second preset value, the said second thyristor D4 of conducting.
Above-mentioned submodule fault secure circuit, preferred, said submodule controller 101 comprises:
Monitoring modular is used for monitoring in real time and judging the electric parameters and the malfunction of said submodule;
First drive circuit is used for when said second switch pipe T2 opens, during first switch transistor T, 1 short trouble, send the locking signal of control second switch pipe T2 locking pulse;
Second drive circuit is used for when said second switch pipe T2 opens, during first switch transistor T, 1 short trouble, send the closed closure signal of control by-pass switch K;
The 3rd drive circuit, be used for when said second switch pipe T2 opens, during first switch transistor T, 1 short trouble, when said monitoring module monitors obtains said submodule electric parameters and satisfies first preset value, the said second thyristor D4 of conducting.
Above-mentioned submodule fault secure circuit; Preferably; Also comprise: the 3rd thyristor D5, the collector electrode C1 of said first switch transistor T 1 links to each other with the anode of said the 3rd thyristor D5, and the emitter E 1 of said first switch transistor T 1 links to each other with the negative electrode of said the 3rd thyristor D5; When 101 monitorings of said submodule controller obtain the submodule electric parameters and satisfy second preset value, said the 3rd thyristor D5 conducting.
Above-mentioned submodule fault secure circuit, preferred, said submodule controller 101 also comprises:
4 wheel driven moves circuit; Be used for when said second switch pipe T2 opens, during first switch transistor T, 1 short trouble; When said monitoring module monitors obtains said submodule electric parameters and satisfies second preset value, said the 3rd thyristor D5 of conducting in the time of the said second thyristor D4 of conducting.
A kind of submodule fault protecting method of modularization multi-level converter comprises:
When the submodule generation second switch pipe T2 of modularization multi-level converter opens, during first switch transistor T, 1 short trouble, locking second switch pipe T2, the conducting second thyristor D4;
Close by-pass switch K, with said submodule bypass.
Above-mentioned submodule fault protecting method, preferred, also comprise:
When the submodule generation second switch pipe T2 of modularization multi-level converter opens, during first switch transistor T, 1 short trouble, conducting the 3rd thyristor D5 in the conducting second thyristor D4.
The submodule fault secure circuit of a kind of modularization multi-level converter provided by the invention comprises: support capacitor C, grading resistor R, first switch transistor T 1, second switch pipe T2, the first diode D1, the second diode D2, the first thyristor D3, by-pass switch K, the second thyristor D4 and submodule controller 101; When said second switch pipe T2 opens, during first switch transistor T, 1 short trouble, second switch pipe T2 locking pulse, the second thyristor D4 conducting; System power flows through this generation fault submodule through the second thyristor D4, is equivalent to this fault submodule bypass, and the submodule controller sends the closed closure signal of control by-pass switch K simultaneously; By-pass switch K is closed; System power flows through K, formally with said submodule bypass, drops into redundant sub again.Adopt the submodule fault secure circuit and the method for a kind of modularization multi-level converter provided by the invention, when said second switch pipe T2 opens, during first switch transistor T, 1 short trouble, can prevent effectively that fault current is extended to system.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the sub modular structure sketch map of modularization multi-level converter in the prior art;
Fig. 2 is the structural representation of the submodule fault secure circuit embodiment 1 of a kind of modularization multi-level converter provided by the invention;
Fig. 3 is first switch transistor T, 1 short trouble of the submodule fault secure circuit embodiment 1 of a kind of modularization multi-level converter provided by the invention current direction figure when occurring in the brachium pontis current i greater than first cycle of zero;
Fig. 4 is first switch transistor T, 1 short trouble of the submodule fault secure circuit embodiment 1 of a kind of modularization multi-level converter provided by the invention current direction figure when occurring in minus second cycle of brachium pontis current i;
Fig. 5 is the structural representation of the submodule fault secure circuit embodiment 1 neutron module controller 101 of a kind of modularization multi-level converter provided by the invention;
Fig. 6 is the structural representation of the submodule fault protecting method embodiment 2 of a kind of modularization multi-level converter provided by the invention;
Fig. 7 is first switch transistor T, 1 short trouble of the submodule fault secure circuit embodiment 2 of a kind of modularization multi-level converter provided by the invention current direction figure when occurring in minus second cycle of brachium pontis current i;
Fig. 8 is the structural representation of the submodule fault secure circuit embodiment 2 neutron module controllers 101 of a kind of modularization multi-level converter provided by the invention;
Fig. 9 is the flow chart of the submodule fault protecting method embodiment 1 of a kind of modularization multi-level converter provided by the invention;
Figure 10 is the flow chart of the submodule fault protecting method embodiment 2 of a kind of modularization multi-level converter provided by the invention.
Embodiment
For the purpose, technical scheme and the advantage that make the embodiment of the invention clearer; To combine the accompanying drawing in the embodiment of the invention below; Technical scheme in the embodiment of the invention is carried out clear, intactly description; Obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
Show the structural representation of the fault secure circuit embodiment 1 of a kind of modularization multi-level converter provided by the invention referring to Fig. 2, comprising: support capacitor C, grading resistor R, first switch transistor T, 1 second switch pipe T2, the first diode D1, the second diode D2, the first thyristor D3, by-pass switch K, the second thyristor D4 and submodule controller 101; The control signal transmission path that dotted line is represented among the figure.
The basic circuit unit of modularization multi-level converter is a submodule, and a plurality of submodules have been formed the brachium pontis structure of converter.
Wherein, said grading resistor R and said support capacitor C parallel connection;
The composition structure of each submodule of converter is identical, and grading resistor R is used for current transformer and shuts down the back and support the capacitor discharge, for the capacitance voltage of realizing Pressure and Control provides necessary sense channel, for sub-capacitance voltage a static state voltage equipoise effect is provided.
The collector electrode C1 of said first switch transistor T 1 links to each other with the emitter E 2 of said second switch pipe T2 through supporting capacitor C, and the collector electrode C2 of said second switch pipe T2 links to each other with the emitter E 1 of said first switch transistor T 1;
The emitter E 1 of said first switch transistor T 1 links to each other with the positive pole of the said first diode D1, and the collector electrode C1 of said first switch transistor T 1 links to each other with the negative pole of the said first diode D1;
The emitter E 2 of said second switch pipe T2 links to each other with the positive pole of the said second diode D2, and the collector electrode C2 of said second switch pipe T2 links to each other with the negative pole of the said second diode D2;
The emitter E 2 of said second switch pipe T2 links to each other with the anode of the said first thyristor D3, and the collector electrode C2 of said second switch pipe T2 links to each other with the negative electrode of the said first thyristor D3;
After the first thyristor D3 is used for system's DC side failed because, circuit breaker carries out triggering and conducting in during this period of time before breaking off, and bears the overcurrent that should flow through the second diode D2, and the said second diode D2 is carried out divided current.When second switch pipe T2 opens, during first switch transistor T, 1 short trouble, the first thyristor D3 is in locking states.
The collector electrode C2 of said second switch pipe T2 links to each other with the anode of the said second thyristor D4, and the emitter E 2 of said second switch pipe T2 links to each other with the negative electrode of the said second thyristor D4;
Said by-pass switch K is parallelly connected with the said second thyristor D4;
The reaction time of the second thyristor D4 is generally tens us.
For the single submodule of modularization multi-level converter, its operating state has three kinds of on off states:
(1) blocking: first switch transistor T 1, second switch pipe T2 all turn-off, and generally before startup, occur during with catastrophe failure, do not occur when normally moving;
(2) input state: first switch transistor T 1 is opened, second switch pipe T2 turn-offs, and this moment, the submodule output voltage was for supporting the voltage of capacitor C;
(3) cut out state: first switch transistor T 1 is turn-offed, T2 is open-minded for the second switch pipe.First switch transistor T, 1 short trouble when this fault betides the brachium pontis current i greater than first cycle of zero, because second switch pipe T2 opens, 1 short circuit of first switch transistor T, supports capacitor C and discharges rapidly through the first switch transistor T 1-second switch pipe T2 loop.The electric current that flows through first switch transistor T 1, second switch pipe T2 this moment and support electric capacity increases rapidly, in several us, reaches tens times of rated current, can cause first switch transistor T 1 and second switch pipe T2 blast.Should block the pulse of first switch transistor T 1 and second switch pipe T2 this moment, electric current still charges through 1 pair of support of first switch transistor T electric capacity of fault.When this fault betides minus second cycle of brachium pontis current i; Electric current is through the second diode D2 conducting; Because 1 short circuit of first switch transistor T makes the voltage of second switch pipe T2 be support capacitor C voltage; The second diode D2 transfers cut-off state to from conducting state, supports capacitor C this moment through first switch transistor T 1 and external circuit discharge.Fault current diffuses to system, and this can cause same brachium pontis or other bridge arm voltages and change in current, and the converter performance is caused certain influence.
Current direction figure when showing first switch transistor T, 1 short trouble of submodule fault secure circuit embodiment 1 of a kind of modularization multi-level converter provided by the invention referring to Fig. 3 and Fig. 4, the direction of arrow is current direction.
Wherein, Fig. 3 is first switch transistor T, 1 short trouble current direction when occurring in the brachium pontis electric current greater than first cycle of zero;
When submodule is in the state of cutting out; Promptly first switch transistor T 1 is turn-offed, T2 is open-minded for the second switch pipe; If fault occurs in electric current greater than first zero cycle; This moment, said submodule controller 101 sent the pulse blocking signal to first switch transistor T 1 with second switch pipe T2, conducting second thyristor D4 when control by-pass switch K is closed.Because the operate time of the second thyristor D4 is very fast, i commutates to ik through the second thyristor D4, with the quick bypass of said submodule.
Fig. 4 is first switch transistor T, 1 short trouble current direction when occurring in minus second cycle of brachium pontis electric current.
If fault occurs in minus second cycle of electric current; This moment, said submodule controller 101 sent the pulse blocking signal to first switch transistor T 1 with second switch pipe T2; Conducting second thyristor D4 when control by-pass switch K is closed, support capacitor C and discharge rapidly through the fault first switch transistor T 1-second thyristor D4 loop this moment.When capacitance voltage is reduced to zero (time is about 1ms), the second thyristor D4 ends, and electric current continues conducting through the second diode D2, and the submodule output voltage is zero, until the then said submodule bypass that finishes of K closure.The quick conducting of D4 can prevent that fault current from diffusing to system, causes same brachium pontis or other bridge arm voltages and electric current to change.
Show the structural representation of the submodule fault secure circuit embodiment 1 neutron module controller 101 of a kind of modularization multi-level converter provided by the invention referring to Fig. 5, comprising: monitoring modular 1011, first drive circuit 1012, second drive circuit 1013 and the 3rd drive circuit 1014.
Said monitoring modular 1011 is used for monitoring in real time and judging the electric parameters and the malfunction of said submodule;
The 3rd drive circuit 1014, be used for when said second switch pipe T2 opens, during first switch transistor T, 1 short trouble, when monitoring modular 1011 monitorings obtain said submodule electric parameters and satisfy first preset value, the said second thyristor D4 of conducting.
Because the reaction time of by-pass switch K is longer; Be generally about the 10ms effect; When second switch pipe T2 opens, during first switch transistor T, 1 short trouble; Second switch pipe T2 accepts the locking signal that submodule controller 101 sends, and the reaction time is about 10us, the electric current second switch pipe T2 that no longer flows through.For accelerating this fault submodule bypass, preventing that fault current from diffusing to system, be one second thyristor D4 of by-pass switch K parallel connection.When second switch pipe T2 opens, during first switch transistor T, 1 short trouble; Said submodule electric parameters takes place to change fast and can reach first preset value rapidly; When 1011 monitorings of the monitoring modular of said submodule controller 101 obtain said submodule electric parameters and satisfy first preset value; First drive circuit 1012 sends the locking signal that second switch pipe T2 is carried out pulse blocking; The closure signal that second drive circuit 1013 sends closes bypass switch K, the said second thyristor D4 of the 3rd drive circuit 1014 conductings simultaneously is with said submodule bypass.
In actual the enforcement, after this fault submodule bypass, the redundant submodule that is provided with comes into operation at random, continues action, the function of this submodule, and the overall performance of this modularization multi-level converter is unaffected.
From the above; The submodule fault secure circuit of a kind of modularization multi-level converter that the embodiment of the invention 1 provides comprises: support capacitor C, grading resistor R, first switch transistor T 1, second switch pipe T2, the first diode D1, the second diode D2, the first thyristor D3, by-pass switch K, the second thyristor D4 and submodule controller 101; When said second switch pipe T2 opens, during first switch transistor T, 1 short trouble, submodule controller 101 control second switch pipe T2 locking pulses, the second thyristor D4 conducting, by-pass switch K is closed simultaneously.Adopt the submodule fault secure circuit of a kind of modularization multi-level converter provided by the invention; When said second switch pipe T2 opens, during first switch transistor T, 1 short trouble; Can realize the quick bypass of fault submodule, and can prevent effectively that fault current is extended to system.
Show the structural representation of the submodule fault secure circuit embodiment 2 of a kind of modularization multi-level converter provided by the invention referring to Fig. 6; This structure is on structure shown in Figure 2; Also comprise: the 3rd thyristor D5; The collector electrode C1 of said first switch transistor T 1 links to each other with the anode of said the 3rd thyristor D5, and the emitter E 1 of said first switch transistor T 1 links to each other with the negative electrode of said the 3rd thyristor D5, promptly said the 3rd thyristor D5 and the said first diode D1 reverse parallel connection.
Current direction when first switch transistor T, 1 short trouble that shows the submodule fault secure circuit embodiment 2 of a kind of modularization multi-level converter provided by the invention referring to Fig. 7 occurs in minus second cycle of brachium pontis electric current.
First switch transistor T 1 is turn-offed, T2 is open-minded for the second switch pipe when submodule is in; If fault occurs in minus second cycle of electric current; This moment, said submodule controller 101 sent the pulse blocking signal to first switch transistor T 1 with second switch pipe T2; K is closed for the control by-pass switch, and conducting second thyristor D4 and the 3rd thyristor D5 support capacitor C at this moment and discharge rapidly through the fault second thyristor D4-the 3rd thyristor D5 loop simultaneously.When capacitance voltage is reduced to zero (time is 1ms in), the second thyristor D4 ends, and electric current is through the second diode D2 afterflow, and the submodule output voltage is zero, until the then said submodule bypass that finishes of K closure.Wherein the quick conducting of the second thyristor D4 can prevent that fault current from diffusing to system, causes same brachium pontis or other bridge arm voltages and electric current to change; The conducting of the D5 of the 3rd thyristor has then been born and should effectively protected fault element not to be damaged through the big electric current of fault second switch pipe.
Show the submodule fault secure circuit embodiment 2 neutron module controllers 101 of a kind of modularization multi-level converter provided by the invention referring to Fig. 8, comprise also that in structure shown in Figure 54 wheel driven moves circuit 1015.
Said 4 wheel driven moves circuit 1015; Be used for when said second switch pipe T2 opens, during first switch transistor T, 1 short trouble; When 1011 monitorings of the monitoring modular of said submodule controller 101 obtain said submodule electric parameters and satisfy second preset value, said the 3rd thyristor D5 of conducting in the time of the said second thyristor D4 of conducting.
When second switch pipe T2 opens, during first switch transistor T, 1 short trouble; Said submodule electric parameters takes place to change fast and can reach second preset value rapidly; When 1011 monitorings of the monitoring modular of said submodule controller 101 obtain said submodule electric parameters and satisfy second preset value, conducting second thyristor D4 and the 3rd thyristor D5 simultaneously.
The said second thyristor D4 of conducting can be with said submodule bypass;
Because the conducting of the 3rd thyristor D5; The 3rd thyristor D5 shunts the overcurrent of first switch transistor T 1 of flowing through; Prevent that effectively fault current from causing first switch transistor T 1 to burst; So just can not improve the availability factor of modularization multi-level converter itself because of certain element fault causes the whole damage of submodule.
In actual the enforcement, after this fault submodule bypass, the redundant submodule that is provided with comes into operation at random, continues action, the function of this submodule, and the overall performance of this modularization multi-level converter is unaffected.
Corresponding with the submodule fault secure circuit of above-mentioned a kind of modularization multi-level converter provided by the invention, the present invention also provides a kind of submodule fault protecting method of modularization multi-level converter.
Show the flow chart of the submodule guard method embodiment 1 of a kind of modularization multi-level converter provided by the invention referring to Fig. 9, comprising:
Step S101: when the submodule generation second switch pipe T2 of said modularization multi-level converter opens, during first switch transistor T, 1 short trouble, locking second switch pipe T2, the conducting second thyristor D4;
When the second switch pipe T2 of the submodule of said modularization multi-level converter opens, during first switch transistor T, 1 short trouble; First drive circuit 1012 of submodule controller 101 sends locking signal and controls said second switch pipe T2 locking pulse; Its reaction time is very fast, is generally about 10us.In order to accelerate speed, be one second thyristor D4 of by-pass switch K parallel connection with this fault submodule bypass, startup redundant sub.When the second switch pipe T2 of the submodule of said modularization multi-level converter opens, during first switch transistor T, 1 short trouble; Said submodule electric parameters takes place to change fast and can reach the firstth preset value rapidly; When monitoring modular 1011 monitoring obtains said submodule electric parameters and satisfies first preset value, the said second thyristor D4 of the 3rd drive circuit 1014 conductings, its reaction time is generally several us; Be equivalent to the bypass of said fault submodule, forbid this fault submodule input coefficient.
Step S102: by-pass switch K closes, with said submodule bypass.
Because the reaction time of by-pass switch K is longer; Be generally about the 10ms effect; When second switch pipe T2 locking pulse, the second thyristor D4 conducting, second drive circuit 1013 of submodule controller 101 sends the closed closure signal of control by-pass switch K simultaneously, and by-pass switch K receives after this closure signal through after the reaction time (10ms); Final by-pass switch K closure can prevent effectively that with the real bypass of said fault submodule fault current is extended to system.
In actual the enforcement, after this fault submodule bypass, the redundant submodule that is provided with comes into operation at random, continues action, the function of this submodule, and the overall performance of this modularization multi-level converter is unaffected.
From the above; The submodule fault protecting method of a kind of modularization multi-level converter that the embodiment of the invention 1 provides; Comprise: when the second switch pipe T2 of the submodule fault secure circuit of said modularization multi-level converter opens, during first switch transistor T, 1 short trouble; Second switch pipe T2 locking, the second thyristor D4 conducting, this fault submodule of bypass fast; Control by-pass switch K closes, with the real bypass of said submodule.Adopt the submodule fault protecting method of a kind of modularization multi-level converter provided by the invention, when said second switch pipe T2 opens, during first switch transistor T, 1 short trouble, can prevent effectively that fault current is extended to system.
Show the flow chart of the submodule fault protecting method embodiment 2 of a kind of modularization multi-level converter provided by the invention referring to Figure 10, this flow chart is between the step S101 of Fig. 9 and step S102, also to comprise:
Step S103: when the submodule generation second switch pipe T2 of modularization multi-level converter opens, during first switch transistor T, 1 short trouble, conducting the 3rd thyristor D5 in the conducting second thyristor D4.
When second switch pipe T2 opens, during first switch transistor T, 1 short trouble; Said submodule electric parameters takes place to change fast and can reach second preset value rapidly; When 1011 monitorings of the monitoring modular of said submodule controller 101 obtain said submodule electric parameters and satisfy second preset value, conducting second thyristor D4 and the 3rd thyristor D5 simultaneously.
When said second switch pipe T2 opens, during first switch transistor T, 1 short trouble; If only take the conducting second thyristor D4; The support capacitor C is discharged rapidly through the first switch transistor T 1-, the second thyristor D4 of short circuit, and this moment, excessive electric current may damage first switch transistor T 1, therefore with said the 3rd thyristor D5 and the first diode D1 reverse parallel connection; Conducting the 3rd thyristor D5 in the conducting second thyristor D4; This big electric current is diverted to the 3rd thyristor D5, has protected first switch transistor T 1, prevents that first switch transistor T 1 of this fault from bursting.
From the above; The submodule fault protecting method of a kind of modularization multi-level converter that the embodiment of the invention 2 provides; Also comprise: conducting the 3rd thyristor D5; The flow through electric current of first switch transistor T 1 of fault of said the 3rd thyristor D5 prevents that first switch transistor T 1 of this fault from bursting, and effectively protects fault element.
In embodiments of the present invention; When monitoring modular was judged the submodule electric parameters and satisfied first preset value, the said second thyristor D4 conducting was when monitoring modular is judged the submodule electric parameters and satisfied second preset value; The 3rd thyristor D5 conducting; Said first preset value and second preset value just are used to represent the critical value of electric current when the second thyristor D4 and the 3rd thyristor D5 answer conducting, and the two equates generally speaking, but does not get rid of indivedual unequal situation.
The above only is a preferred implementation of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; Can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (7)
1. the submodule fault secure circuit of a modularization multi-level converter; It is characterized in that, comprising: support capacitor C, grading resistor R, first switch transistor T 1, second switch pipe T2, the first diode D1, the second diode D2, the first thyristor D3, by-pass switch K, the second thyristor D4 and submodule controller 101;
Wherein, the collector electrode C1 of said first switch transistor T 1 links to each other with the emitter E 2 of said second switch pipe T2 through supporting capacitor C, and the collector electrode C2 of said second switch pipe T2 links to each other with the emitter E 1 of said first switch transistor T 1;
Said grading resistor R is parallelly connected with said support capacitor C;
The emitter E 1 of said first switch transistor T 1 links to each other with the positive pole of the said first diode D1, and the collector electrode C1 of said first switch transistor T 1 links to each other with the negative pole of the said first diode D1;
The emitter E 2 of said second switch pipe T2 links to each other with the positive pole of the said second diode D2, and the collector electrode C2 of said second switch pipe T2 links to each other with the negative pole of the said second diode D2;
The emitter E 2 of said second switch pipe T2 links to each other with the anode of the said first thyristor D3, and the collector electrode C2 of said second switch pipe T2 links to each other with the negative electrode of the said first thyristor D3;
The collector electrode C2 of said second switch pipe T2 links to each other with the anode of the said second thyristor D4, and the emitter E 2 of said second switch pipe T2 links to each other with the negative electrode of the said second thyristor D4;
Said by-pass switch K is parallelly connected with the said second thyristor D4;
Said submodule controller 101; Be used for monitoring in real time and judge each electric parameters of submodule and malfunction; When said second switch pipe T2 opens, during first switch transistor T, 1 short trouble, the closed closure signal of the locking signal that sends control second switch pipe T2 locking pulse and control by-pass switch K is with said submodule bypass.
2. submodule fault secure circuit according to claim 1; It is characterized in that; Said second switch pipe T2 opens, during first switch transistor T, 1 short trouble; When said submodule controller 101 monitors satisfied first preset value of said submodule electric parameters or second preset value, the said second thyristor D4 of conducting.
3. submodule fault secure circuit according to claim 1 is characterized in that, said submodule controller 101 comprises:
Monitoring modular is used for monitoring in real time and judging the electric parameters and the malfunction of said submodule;
First drive circuit is used for when said second switch pipe T2 opens, during first switch transistor T, 1 short trouble, send the locking signal of control second switch pipe T2 locking pulse;
Second drive circuit is used for when said second switch pipe T2 opens, during first switch transistor T, 1 short trouble, send the closed closure signal of control by-pass switch K;
The 3rd drive circuit, be used for when said second switch pipe T2 opens, during first switch transistor T, 1 short trouble, when said monitoring module monitors obtains said submodule electric parameters and satisfies first preset value, the said second thyristor D4 of conducting.
4. submodule fault secure circuit according to claim 2; It is characterized in that; Also comprise: the 3rd thyristor D5, the collector electrode C1 of said first switch transistor T 1 links to each other with the anode of said the 3rd thyristor D5, and the emitter E 1 of said first switch transistor T 1 links to each other with the negative electrode of said the 3rd thyristor D5; When 101 monitorings of said submodule controller obtain the submodule electric parameters and satisfy second preset value, said the 3rd thyristor D5 conducting.
5. submodule fault secure circuit according to claim 4 is characterized in that, said submodule controller 101 also comprises:
4 wheel driven moves circuit; Be used for when said second switch pipe T2 opens, during first switch transistor T, 1 short trouble; When said monitoring module monitors obtains said submodule electric parameters and satisfies second preset value, said the 3rd thyristor D5 of conducting in the time of the said second thyristor D4 of conducting.
6. the submodule fault protecting method of a modularization multi-level converter is characterized in that, comprising:
When the submodule generation second switch pipe T2 of modularization multi-level converter opens, during first switch transistor T, 1 short trouble, locking second switch pipe T2, the conducting second thyristor D4;
Close by-pass switch K, with said submodule bypass.
7. submodule fault protecting method according to claim 6 is characterized in that, also comprises:
When the submodule generation second switch pipe T2 of modularization multi-level converter opens, during first switch transistor T, 1 short trouble, conducting the 3rd thyristor D5 in the conducting second thyristor D4.
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