CN102801295B - Fault protection circuit and method for submodule of modular multilevel converter - Google Patents

Fault protection circuit and method for submodule of modular multilevel converter Download PDF

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CN102801295B
CN102801295B CN201210282768.3A CN201210282768A CN102801295B CN 102801295 B CN102801295 B CN 102801295B CN 201210282768 A CN201210282768 A CN 201210282768A CN 102801295 B CN102801295 B CN 102801295B
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described
submodule
switch
pipe t2
switch pipe
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CN201210282768.3A
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Chinese (zh)
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CN102801295A (en
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敬华兵
吴强
龚芬
唐剑钊
邓明
翟文杰
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株洲变流技术国家工程研究中心有限公司
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Abstract

The invention provides a fault protection circuit for a submodule of a modular multilevel converter. When a second switch tube T2 is on, and a first switch tube T1 is off and is short circuited, a submodule controller 101 controls the second switch tube T2 to block the conduction between a pulse and a second thyristor D4, and sends an off signal to a by-pass switch at the same time. Due to the long action time of the by-pass switch K, the conduction of the second thyristor D4 can implement the rapid bypass of a fault submodule. According to the fault protection circuit and method for the submodule of the modular multilevel converter provided by the invention, when the second switch tube T2 is on, and the first switch tube T1 is short circuited, fault current can be prevented from expanding to a system effectively, so that the voltage stability at a direct current side is ensured and the requirements of the system on high reliability and safe operation are met.

Description

A kind of sub-module fault protective circuit of modularization multi-level converter and method

Technical field

The invention belongs to Technology of HVDC based Voltage Source Converter field, particularly relate to a kind of sub-module fault protective circuit and method of modularization multi-level converter.

Background technology

Technology of HVDC based Voltage Source Converter is a kind of novel high voltage dc transmission technology based on voltage source converter, there is no commutation failure problem by means of it, can realize that broader applications between the quick uneoupled control of meritorious and reactive power and harmonic content low superiority are grid-connected in distributed power generation, the field such as asynchronous interconnected, the multi-terminal HVDC transmission of AC system and urban power distribution network increase-volume.

Modularization multi-level converter receives very big concern in recent years as one of voltage source converter topology realizing flexible DC power transmission through engineering approaches.Its basic circuit unit is submodule, structural representation as shown in Figure 1, comprise: two IGBT switching tubes (T1 and T2), with the diode (D1 and D2) of each IGBT reverse parallel connection, the thyristor (D3), by-pass switch (K), grading resistor (R), Support Capacitor (C) etc. with T2 reverse parallel connection, top level control system is turned on and off by control T1, T2's, it is support capacitor voltage, i.e. DC voltage that submodule exports Uc or 0(Uc).Wherein, the function of D3 for after DC side is short-circuited fault, circuit breaker before disconnecting during this period of time in carry out triggering and conducting, to bear the overcurrent that should flow through diode, play the effect of protection fly-wheel diode; K can realize the quick switching of redundancy submodule and malfunctioning module, and once closed namely not by controlling to disconnect, only having and manually resetting when current transformer interruption maintenance; R provides a static state voltage equipoise effect for sub-capacitance voltage, also can be used for current transformer and shuts down rear support capacitor discharge.Just can generate stable exchanging and VD by the input controlling each submodule with exiting, thus change output voltage and the power grade of converter.

But; when submodule be in T1 turn off, T2 open cut out operating state; if now T1 breaks down short circuit; for other components and parts in protection submodule; submodule controller can send pulse blocking signal to T2, closed K, bypass fault submodule; system power i directly flows through from K, no longer enters submodule.But the reaction time occurring to T2 pulse blocking from fault is about 10us, and the closing time of K is about about 10ms, because the operate time of K is longer, now fault current diffuses to system, will affect the change of same brachium pontis or other bridge arm voltages and electric current.

Summary of the invention

In view of this; the object of the present invention is to provide a kind of sub-module fault protective circuit and method of modularization multi-level converter; for thyristor D3 reverse parallel connection thyristor D4; the synchronous conducting when opening T2 pulse blocking and closed K; submodule input current i is by the thyristor D4 change of current; by the rapid bypass of this fault submodule; because the thyristor reaction time is close with T2; faster than by-pass switch; fault current can be avoided like this to diffuse in converter, ensured accurate, safety and the reliability service of system.

A sub-module fault protective circuit for modularization multi-level converter, comprising: Support Capacitor C, grading resistor R, the first switch transistor T 1, second switch pipe T2, the first diode D1, the second diode D2, the first thyristor D3, by-pass switch K, the second thyristor D4 and submodule controller 101;

Wherein, the collector electrode C1 of described first switch transistor T 1 is connected with the emitter E 2 of described second switch pipe T2 by Support Capacitor C, and the collector electrode C2 of described second switch pipe T2 is connected with the emitter E 1 of described first switch transistor T 1;

Described grading resistor R is in parallel with described Support Capacitor C;

The emitter E 1 of described first switch transistor T 1 is connected with the positive pole of described first diode D1, and the collector electrode C1 of described first switch transistor T 1 is connected with the negative pole of described first diode D1;

The emitter E 2 of described second switch pipe T2 is connected with the positive pole of described second diode D2, and the collector electrode C2 of described second switch pipe T2 is connected with the negative pole of described second diode D2;

The emitter E 2 of described second switch pipe T2 is connected with the anode of described first thyristor D3, and the collector electrode C2 of described second switch pipe T2 is connected with the negative electrode of described first thyristor D3;

The collector electrode C2 of described second switch pipe T2 is connected with the anode of described second thyristor D4, and the emitter E 2 of described second switch pipe T2 is connected with the negative electrode of described second thyristor D4;

Described by-pass switch K is in parallel with described second thyristor D4;

Described submodule controller 101, for Real-Time Monitoring and judge each electric parameters and malfunction in submodule, when described second switch pipe T2 open, the first switch transistor T 1 short trouble time, send the locking signal that controls second switch pipe T2 locking pulse and control the closed closure signal of by-pass switch K by described submodule bypass.

Above-mentioned sub-module fault protective circuit; preferably; described second switch pipe T2 opens, the first switch transistor T 1 short trouble time, when described submodule controller 101 monitor described submodule electric parameters meet the first preset value or the second preset value time, the second thyristor D4 described in conducting.

Above-mentioned sub-module fault protective circuit, preferably, described submodule controller 101 comprises:

Monitoring modular, judges electric parameters and the malfunction of described submodule for Real-Time Monitoring;

First drive circuit, for opening as described second switch pipe T2, the first switch transistor T 1 short trouble time, send the locking signal controlling second switch pipe T2 locking pulse;

Second drive circuit, for opening as described second switch pipe T2, the first switch transistor T 1 short trouble time, send and control the closed closure signal of by-pass switch K;

3rd drive circuit, for opening as described second switch pipe T2, the first switch transistor T 1 short trouble time, when described monitoring module monitors obtain described submodule electric parameters meet the first preset value time, the second thyristor D4 described in conducting.

Above-mentioned sub-module fault protective circuit; preferably; also comprise: the 3rd thyristor D5; the collector electrode C1 of described first switch transistor T 1 is connected with the anode of described 3rd thyristor D5; the emitter E 1 of described first switch transistor T 1 is connected with the negative electrode of described 3rd thyristor D5; when the monitoring of described submodule controller 101 obtain submodule electric parameters meet the second preset value time, described 3rd thyristor D5 conducting.

Above-mentioned sub-module fault protective circuit, preferably, described submodule controller 101 also comprises:

Four-wheel drive circuit, for opening as described second switch pipe T2, the first switch transistor T 1 short trouble time, when described monitoring module monitors obtain described submodule electric parameters meet the second preset value time, the 3rd thyristor D5 described in conducting while the second thyristor D4 described in conducting.

A sub-module fault guard method for modularization multi-level converter, comprising:

When the submodule generation second switch pipe T2 of modularization multi-level converter open, the first switch transistor T 1 short trouble time, locking second switch pipe T2, conducting second thyristor D4;

Close by-pass switch K, by described submodule bypass.

Above-mentioned sub-module fault guard method, preferably, also comprises:

When the submodule generation second switch pipe T2 of modularization multi-level converter open, the first switch transistor T 1 short trouble time, conducting the 3rd thyristor D5 while conducting second thyristor D4.

The sub-module fault protective circuit of a kind of modularization multi-level converter provided by the invention, comprising: Support Capacitor C, grading resistor R, the first switch transistor T 1, second switch pipe T2, the first diode D1, the second diode D2, the first thyristor D3, by-pass switch K, the second thyristor D4 and submodule controller 101; When described second switch pipe T2 open, the first switch transistor T 1 short trouble time, second switch pipe T2 locking pulse, second thyristor D4 conducting, system power flows through this generation fault submodule by the second thyristor D4, is equivalent to this fault submodule bypass, and submodule controller sends and controls the closed closure signal of by-pass switch K simultaneously, by-pass switch K closes, system power flows through K, formally by described submodule bypass, then drops into redundancy submodule.Adopt sub-module fault protective circuit and the method for a kind of modularization multi-level converter provided by the invention, when described second switch pipe T2 open, the first switch transistor T 1 short trouble time, can effectively prevent fault current to be extended to system.

Accompanying drawing explanation

In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.

Fig. 1 is the sub modular structure schematic diagram of modularization multi-level converter in prior art;

Fig. 2 is the structural representation of the sub-module fault protective circuit embodiment 1 of a kind of modularization multi-level converter provided by the invention;

Fig. 3 is that the first switch transistor T 1 short trouble of the sub-module fault protective circuit embodiment 1 of a kind of modularization multi-level converter provided by the invention occurs in current direction figure when bridge arm current i is greater than for first cycle of zero;

Fig. 4 is the first switch transistor T 1 short trouble of the sub-module fault protective circuit embodiment 1 of a kind of modularization multi-level converter provided by the invention current direction figure when occurring in bridge arm current i minus second cycle;

Fig. 5 is the structural representation of the sub-module fault protective circuit embodiment 1 Neutron module controller 101 of a kind of modularization multi-level converter provided by the invention;

Fig. 6 is the structural representation of the sub-module fault guard method embodiment 2 of a kind of modularization multi-level converter provided by the invention;

Fig. 7 is the first switch transistor T 1 short trouble of the sub-module fault protective circuit embodiment 2 of a kind of modularization multi-level converter provided by the invention current direction figure when occurring in bridge arm current i minus second cycle;

Fig. 8 is the structural representation of the sub-module fault protective circuit embodiment 2 Neutron module controller 101 of a kind of modularization multi-level converter provided by the invention;

Fig. 9 is the flow chart of the sub-module fault guard method embodiment 1 of a kind of modularization multi-level converter provided by the invention;

Figure 10 is the flow chart of the sub-module fault guard method embodiment 2 of a kind of modularization multi-level converter provided by the invention.

Embodiment

For making the object of the embodiment of the present invention, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.

Show the structural representation of the fault secure circuit embodiment 1 of a kind of modularization multi-level converter provided by the invention see Fig. 2, comprising: Support Capacitor C, grading resistor R, the first switch transistor T 1 second switch pipe T2, the first diode D1, the second diode D2, the first thyristor D3, by-pass switch K, the second thyristor D4 and submodule controller 101; The control signal transmission path that in figure, dotted line represents.

The basic circuit unit of modularization multi-level converter is submodule, and multiple submodule constitutes the bridge arm structure of converter.

Wherein, described grading resistor R and described Support Capacitor C is in parallel;

The composition structure of each submodule of converter is identical, and grading resistor R is used for current transformer and shuts down rear support capacitor discharge, for the capacitance voltage realizing Pressure and Control provides the sense channel of necessity, provides a static state voltage equipoise effect for sub-capacitance voltage.

The collector electrode C1 of described first switch transistor T 1 is connected with the emitter E 2 of described second switch pipe T2 by Support Capacitor C, and the collector electrode C2 of described second switch pipe T2 is connected with the emitter E 1 of described first switch transistor T 1;

The emitter E 1 of described first switch transistor T 1 is connected with the positive pole of described first diode D1, and the collector electrode C1 of described first switch transistor T 1 is connected with the negative pole of described first diode D1;

The emitter E 2 of described second switch pipe T2 is connected with the positive pole of described second diode D2, and the collector electrode C2 of described second switch pipe T2 is connected with the negative pole of described second diode D2;

The emitter E 2 of described second switch pipe T2 is connected with the anode of described first thyristor D3, and the collector electrode C2 of described second switch pipe T2 is connected with the negative electrode of described first thyristor D3;

First thyristor D3 is used for that system dc side is short-circuited after fault, circuit breaker before disconnecting during this period of time in carry out triggering and conducting, bear the overcurrent that should flow through the second diode D2, divided current carried out to described second diode D2.When second switch pipe T2 open, the first switch transistor T 1 short trouble time, the first thyristor D3 is in locking states.

The collector electrode C2 of described second switch pipe T2 is connected with the anode of described second thyristor D4, and the emitter E 2 of described second switch pipe T2 is connected with the negative electrode of described second thyristor D4;

Described by-pass switch K is in parallel with described second thyristor D4;

The reaction time of the second thyristor D4 is generally tens us.

For the single submodule of modularization multi-level converter, its operating state has three kinds of on off states:

(1) blocking: the first switch transistor T 1, second switch pipe T2 all turn off, and generally occur with during catastrophe failure before activation, does not occur during normal operation;

(2) state is dropped into: the first switch transistor T 1 is opened, second switch pipe T2 turns off, and now submodule output voltage is the voltage of Support Capacitor C;

(3) state is cut out: the first switch transistor T 1 turns off, T2 is open-minded for second switch pipe.First switch transistor T 1 short trouble, when this fault betide bridge arm current i be greater than for first cycle of zero time, due to second switch pipe T2 open, the first switch transistor T 1 short circuit, Support Capacitor C is discharged rapidly by the first switch transistor T 1-second switch pipe T2 loop.The electric current now flowing through the first switch transistor T 1, second switch pipe T2 and Support Capacitor increases rapidly, reaches tens times of rated current in a few us, and the first switch transistor T 1 and second switch pipe T2 can be caused to explode.Now should block the pulse of the first switch transistor T 1 and second switch pipe T2, electric current is still charged by the first switch transistor T 1 pair of Support Capacitor of fault.When this fault betides bridge arm current i minus second cycle, electric current is by the second diode D2 conducting, because the first switch transistor T 1 short circuit makes the both end voltage of second switch pipe T2 be Support Capacitor C voltage, second diode D2 transfers cut-off state to from conducting state, and now Support Capacitor C is by the first switch transistor T 1 and external circuit electric discharge.Fault current diffuses to system, and this can cause the change of same brachium pontis or other bridge arm voltages and electric current, causes certain influence to converter performance.

Show current direction figure during the first switch transistor T 1 short trouble of the sub-module fault protective circuit embodiment 1 of a kind of modularization multi-level converter provided by the invention see Fig. 3 and Fig. 4, the direction of arrow is current direction.

Wherein, Fig. 3 is that the first switch transistor T 1 short trouble occurs in current direction when bridge arm current is greater than for first cycle of zero;

When submodule is in the state of cutting out, namely the first switch transistor T 1 turns off, T2 is open-minded for second switch pipe, if fault occurs in first cycle that electric current is greater than zero, now described submodule controller 101 sends pulse blocking signal to the first switch transistor T 1 and second switch pipe T2, controls conducting second thyristor D4 while by-pass switch K closes.Due to the second thyristor D4 operate time quickly, i by second thyristor D4 commutate to ik, by quick for described submodule bypass.

Fig. 4 is the first switch transistor T 1 short trouble current direction when occurring in bridge arm current minus second cycle.

If fault occurs in electric current second cycle minus, now described submodule controller 101 sends pulse blocking signal to the first switch transistor T 1 and second switch pipe T2, control conducting second thyristor D4 while by-pass switch K closes, now Support Capacitor C is discharged rapidly by fault first switch transistor T 1-second thyristor D4 loop.When capacitance voltage is reduced to zero (time is about 1ms), the second thyristor D4 ends, and electric current continues conducting by the second diode D2, and submodule output voltage is zero, until K closes complete then described submodule bypass.The fast conducting of D4 can prevent fault current from diffusing to system, causes same brachium pontis or other bridge arm voltages and electric current to change.

Show the structural representation of the sub-module fault protective circuit embodiment 1 Neutron module controller 101 of a kind of modularization multi-level converter provided by the invention see Fig. 5, comprising: monitoring modular 1011, first drive circuit 1012, second drive circuit 1013 and the 3rd drive circuit 1014.

Described monitoring modular 1011, judges electric parameters and the malfunction of described submodule for Real-Time Monitoring;

First drive circuit 1012, for opening as described second switch pipe T2, the first switch transistor T 1 short trouble time, send the locking signal controlling second switch pipe T2 locking pulse;

Second drive circuit 1013, for opening as described second switch pipe T2, the first switch transistor T 1 short trouble time, send and control the closed closure signal of by-pass switch K;

3rd drive circuit 1014, for opening as described second switch pipe T2, the first switch transistor T 1 short trouble time, when monitoring modular 1011 monitoring obtain described submodule electric parameters meet the first preset value time, the second thyristor D4 described in conducting.

Because the reaction time of by-pass switch K is longer, be generally 10ms effect left and right, when second switch pipe T2 open, the first switch transistor T 1 short trouble time, second switch pipe T2 accepts the locking signal that submodule controller 101 sends, reaction time is about 10us, and electric current no longer flows through second switch pipe T2.For accelerating this fault submodule bypass, preventing fault current from diffusing to system, be a by-pass switch K second thyristor D4 in parallel.When second switch pipe T2 open, the first switch transistor T 1 short trouble time, described submodule electric parameters generation Rapid Variable Design also can reach rapidly the first preset value, when described submodule controller 101 monitoring modular 1011 monitoring obtain described submodule electric parameters meet the first preset value time, first drive circuit 1012 sends locking signal second switch pipe T2 being carried out to pulse blocking, second drive circuit 1013 sends the closure signal of closes bypass switch K, second thyristor D4 described in 3rd drive circuit 1014 conducting simultaneously, by described submodule bypass.

In actual enforcement, after this fault submodule bypass, the submodule that redundancy is arranged comes into operation at random, and continue the action of this submodule, function, the overall performance of this modularization multi-level converter is unaffected.

From the above, the sub-module fault protective circuit of a kind of modularization multi-level converter that the embodiment of the present invention 1 provides, comprising: Support Capacitor C, grading resistor R, the first switch transistor T 1, second switch pipe T2, the first diode D1, the second diode D2, the first thyristor D3, by-pass switch K, the second thyristor D4 and submodule controller 101; When described second switch pipe T2 open, the first switch transistor T 1 short trouble time, submodule controller 101 controls second switch pipe T2 locking pulse, the second thyristor D4 conducting, and simultaneously by-pass switch K closes.Adopt the sub-module fault protective circuit of a kind of modularization multi-level converter provided by the invention; when described second switch pipe T2 open, the first switch transistor T 1 short trouble time; the quick bypass of fault submodule can be realized, and can effectively prevent fault current to be extended to system.

The structural representation of the sub-module fault protective circuit embodiment 2 of a kind of modularization multi-level converter provided by the invention is shown see Fig. 6; this structure is in the structure shown in Fig. 2; also comprise: the 3rd thyristor D5; the collector electrode C1 of described first switch transistor T 1 is connected with the anode of described 3rd thyristor D5; the emitter E 1 of described first switch transistor T 1 is connected with the negative electrode of described 3rd thyristor D5, i.e. described 3rd thyristor D5 and described first diode D1 reverse parallel connection.

Current direction when the first switch transistor T 1 short trouble showing the sub-module fault protective circuit embodiment 2 of a kind of modularization multi-level converter provided by the invention see Fig. 7 occurs in bridge arm current minus second cycle.

When submodule is in, the first switch transistor T 1 turns off, T2 is open-minded for second switch pipe, if fault occurs in electric current second cycle minus, now described submodule controller 101 sends pulse blocking signal to the first switch transistor T 1 and second switch pipe T2, control by-pass switch K to close, conducting second thyristor D4 and the 3rd thyristor D5 simultaneously, now Support Capacitor C is discharged rapidly by fault second thyristor D4-the 3rd thyristor D5 loop.When capacitance voltage is reduced to zero (time is in 1ms), the second thyristor D4 ends, and electric current is by the second diode D2 afterflow, and submodule output voltage is zero, until K closes complete then described submodule bypass.Wherein the fast conducting of the second thyristor D4 can prevent fault current from diffusing to system, causes same brachium pontis or other bridge arm voltages and electric current to change; The conducting of the D5 of the 3rd thyristor then assume responsibility for should by the big current of fault second switch pipe, and available protecting fault element is not damaged.

Show the sub-module fault protective circuit embodiment 2 Neutron module controller 101 of a kind of modularization multi-level converter provided by the invention see Fig. 8, the structure shown in Fig. 5 also comprises four-wheel drive circuit 1015.

Described four-wheel drive circuit 1015, for opening as described second switch pipe T2, the first switch transistor T 1 short trouble time, when described submodule controller 101 monitoring modular 1011 monitoring obtain described submodule electric parameters meet the second preset value time, the 3rd thyristor D5 described in conducting while the second thyristor D4 described in conducting.

When second switch pipe T2 open, the first switch transistor T 1 short trouble time, described submodule electric parameters generation Rapid Variable Design also can reach rapidly the second preset value, when monitoring modular 1011 monitoring of described submodule controller 101 obtain described submodule electric parameters meet the second preset value time, simultaneously conducting second thyristor D4 and the 3rd thyristor D5.

Second thyristor D4 described in conducting, can by described submodule bypass;

Due to the conducting of the 3rd thyristor D5,3rd thyristor D5 shunts the overcurrent flowing through the first switch transistor T 1, effectively prevent fault current from causing the first switch transistor T 1 to burst, submodule entirety would not be caused because of certain element fault like this to damage, improve the availability factor of modularization multi-level converter itself.

In actual enforcement, after this fault submodule bypass, the submodule that redundancy is arranged comes into operation at random, and continue the action of this submodule, function, the overall performance of this modularization multi-level converter is unaffected.

Corresponding with the sub-module fault protective circuit of above-mentioned provided by the invention a kind of modularization multi-level converter, present invention also offers a kind of sub-module fault guard method of modularization multi-level converter.

Show the flow chart of the submodule guard method embodiment 1 of a kind of modularization multi-level converter provided by the invention see Fig. 9, comprising:

Step S101: when the submodule generation second switch pipe T2 of described modularization multi-level converter open, the first switch transistor T 1 short trouble time, locking second switch pipe T2, conducting second thyristor D4;

When the second switch pipe T2 of the submodule of described modularization multi-level converter open, the first switch transistor T 1 short trouble time, first drive circuit 1012 of submodule controller 101 sends locking signal and controls described second switch pipe T2 locking pulse, its reaction time is very fast, is generally about 10us.In order to accelerate this fault submodule bypass, the speed starting redundancy submodule, be a by-pass switch K second thyristor D4 in parallel.When the second switch pipe T2 of the submodule of described modularization multi-level converter open, the first switch transistor T 1 short trouble time, described submodule electric parameters generation Rapid Variable Design also can reach rapidly the firstth preset value, when monitoring modular 1011 monitoring obtain described submodule electric parameters meet the first preset value time, second thyristor D4 described in 3rd drive circuit 1014 conducting, its reaction time is generally several us, be equivalent to the bypass of described fault submodule, forbid this fault submodule input coefficient.

Step S102: by-pass switch K closes, by described submodule bypass.

Because the reaction time of by-pass switch K is longer, be generally 10ms effect left and right, when second switch pipe T2 locking pulse, the second thyristor D4 conducting, second drive circuit 1013 of submodule controller 101 sends simultaneously and controls the closed closure signal of by-pass switch K, by-pass switch K to receive after this closure signal after the reaction time (10ms), final by-pass switch K is closed by the real bypass of described fault submodule, can effectively prevent fault current to be extended to system.

In actual enforcement, after this fault submodule bypass, the submodule that redundancy is arranged comes into operation at random, and continue the action of this submodule, function, the overall performance of this modularization multi-level converter is unaffected.

From the above, the sub-module fault guard method of a kind of modularization multi-level converter that the embodiment of the present invention 1 provides, comprise: when the second switch pipe T2 of the sub-module fault protective circuit of described modularization multi-level converter open, the first switch transistor T 1 short trouble time, second switch pipe T2 locking, the second thyristor D4 conducting, this fault submodule of quick bypass; Control by-pass switch K to close, by real for described submodule bypass.Adopt the sub-module fault guard method of a kind of modularization multi-level converter provided by the invention, when described second switch pipe T2 open, the first switch transistor T 1 short trouble time, can effectively prevent fault current to be extended to system.

Show the flow chart of the sub-module fault guard method embodiment 2 of a kind of modularization multi-level converter provided by the invention see Figure 10, this flow chart also comprises between the step S101 and step S102 of Fig. 9:

Step S103: when the submodule generation second switch pipe T2 of modularization multi-level converter open, the first switch transistor T 1 short trouble time, conducting the 3rd thyristor D5 while conducting second thyristor D4.

When second switch pipe T2 open, the first switch transistor T 1 short trouble time, described submodule electric parameters generation Rapid Variable Design also can reach rapidly the second preset value, when monitoring modular 1011 monitoring of described submodule controller 101 obtain described submodule electric parameters meet the second preset value time, simultaneously conducting second thyristor D4 and the 3rd thyristor D5.

When described second switch pipe T2 open, the first switch transistor T 1 short trouble time; if only take conducting second thyristor D4; Support Capacitor C is discharged rapidly by the first switch transistor T 1-second thyristor D4 of short circuit; now excessive electric current may damage the first switch transistor T 1; therefore by described 3rd thyristor D5 and the first diode D1 reverse parallel connection; conducting the 3rd thyristor D5 while conducting second thyristor D4; this big current is diverted to the 3rd thyristor D5; protect the first switch transistor T 1, prevent the first switch transistor T 1 of this fault from bursting.

From the above; the sub-module fault guard method of a kind of modularization multi-level converter that the embodiment of the present invention 2 provides; also comprise: conducting the 3rd thyristor D5; described 3rd thyristor D5 flows through the electric current of the first switch transistor T 1 of fault; prevent the first switch transistor T 1 of this fault from bursting, available protecting fault element.

In embodiments of the present invention, when monitoring modular judges that submodule electric parameters meets the first preset value, described second thyristor D4 conducting, when monitoring modular judges that submodule electric parameters meets the second preset value, 3rd thyristor D5 conducting, the critical value of electric current when described first preset value and the second preset value are just for representing that the second thyristor D4 and the 3rd thyristor D5 answers conducting, generally the two is equal, but does not get rid of indivedual unequal situation.

The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.

Claims (7)

1. the sub-module fault protective circuit of a modularization multi-level converter, it is characterized in that, comprising: Support Capacitor C, grading resistor R, the first switch transistor T 1, second switch pipe T2, the first diode D1, the second diode D2, the first thyristor D3, by-pass switch K, the second thyristor D4 and submodule controller 101;
Wherein, the collector electrode C1 of described first switch transistor T 1 is connected with the emitter E 2 of described second switch pipe T2 by Support Capacitor C, and the collector electrode C2 of described second switch pipe T2 is connected with the emitter E 1 of described first switch transistor T 1;
Described grading resistor R is in parallel with described Support Capacitor C;
The emitter E 1 of described first switch transistor T 1 is connected with the positive pole of described first diode D1, and the collector electrode C1 of described first switch transistor T 1 is connected with the negative pole of described first diode D1;
The emitter E 2 of described second switch pipe T2 is connected with the positive pole of described second diode D2, and the collector electrode C2 of described second switch pipe T2 is connected with the negative pole of described second diode D2;
The emitter E 2 of described second switch pipe T2 is connected with the anode of described first thyristor D3, and the collector electrode C2 of described second switch pipe T2 is connected with the negative electrode of described first thyristor D3;
The collector electrode C2 of described second switch pipe T2 is connected with the anode of described second thyristor D4, and the emitter E 2 of described second switch pipe T2 is connected with the negative electrode of described second thyristor D4;
Described by-pass switch K is in parallel with described second thyristor D4;
Described submodule controller 101, for Real-Time Monitoring and judge each electric parameters and malfunction in submodule, when described second switch pipe T2 open, the first switch transistor T 1 short trouble time, send the locking signal of described first switch transistor T 1 of control and second switch pipe T2 locking pulse and control the closed closure signal of by-pass switch K by described submodule bypass, second thyristor D4 described in conducting simultaneously, described first thyristor D3 locking.
2. sub-module fault protective circuit according to claim 1; it is characterized in that; described second switch pipe T2 opens, the first switch transistor T 1 short trouble time; when described submodule controller 101 monitors satisfied first preset value of described submodule electric parameters or the second preset value, the second thyristor D4 described in conducting.
3. sub-module fault protective circuit according to claim 1, is characterized in that, described submodule controller 101 comprises:
Monitoring modular, judges electric parameters and the malfunction of described submodule for Real-Time Monitoring;
First drive circuit, for opening as described second switch pipe T2, the first switch transistor T 1 short trouble time, send the locking signal controlling second switch pipe T2 locking pulse;
Second drive circuit, for opening as described second switch pipe T2, the first switch transistor T 1 short trouble time, send and control the closed closure signal of by-pass switch K;
3rd drive circuit, for opening as described second switch pipe T2, the first switch transistor T 1 short trouble time, when described monitoring module monitors obtain described submodule electric parameters meet the first preset value time, the second thyristor D4 described in conducting.
4. sub-module fault protective circuit according to claim 2; it is characterized in that; also comprise: the 3rd thyristor D5; the collector electrode C1 of described first switch transistor T 1 is connected with the anode of described 3rd thyristor D5; the emitter E 1 of described first switch transistor T 1 is connected with the negative electrode of described 3rd thyristor D5; when the monitoring of described submodule controller 101 obtain submodule electric parameters meet the second preset value time, described 3rd thyristor D5 conducting.
5. sub-module fault protective circuit according to claim 4, is characterized in that, described submodule controller 101 also comprises:
Four-wheel drive circuit, for opening as described second switch pipe T2, the first switch transistor T 1 short trouble time, when described monitoring module monitors obtain described submodule electric parameters meet the second preset value time, the 3rd thyristor D5 described in conducting while the second thyristor D4 described in conducting.
6. a sub-module fault guard method for modularization multi-level converter, is characterized in that, be applied to the sub-module fault protective circuit of modularization multi-level converter as claimed in claim 1, described method comprises:
When the submodule generation second switch pipe T2 of modularization multi-level converter open, the first switch transistor T 1 short trouble time, locking second switch pipe T2, conducting second thyristor D4;
Close by-pass switch K, by described submodule bypass.
7. sub-module fault guard method according to claim 6, is characterized in that, also comprise:
When the submodule generation second switch pipe T2 of modularization multi-level converter open, the first switch transistor T 1 short trouble time, conducting the 3rd thyristor D5 while conducting second thyristor D4.
CN201210282768.3A 2012-08-09 2012-08-09 Fault protection circuit and method for submodule of modular multilevel converter CN102801295B (en)

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Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103107725B (en) * 2013-02-06 2014-12-17 浙江大学 Multi-level converter with direct current voltage reverse function
CN104079153B (en) * 2013-03-29 2016-08-24 南京南瑞继保电气有限公司 A kind of method improving series connection chain type convertor equipment dynamic response
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EP2824701B1 (en) * 2013-07-12 2020-05-06 ABB Power Grids Switzerland AG High-power semiconductor module
DE102013219466A1 (en) * 2013-09-26 2015-03-26 Siemens Aktiengesellschaft Multilevelumrichter
CN103560687B (en) * 2013-09-27 2016-05-18 株洲变流技术国家工程研究中心有限公司 Modular multi-level converter system, and control system and control method
CN103715658B (en) * 2013-11-25 2016-08-17 国家电网公司 A kind of guard method of Modular multilevel converter bridge arm short circuit fault
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CN104052026B (en) * 2014-05-29 2016-05-25 华中科技大学 For submodule topology and the application thereof of modularization multi-level converter
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CN105991054A (en) * 2015-03-06 2016-10-05 南京南瑞继保电气有限公司 Converter sub module, control method and converter
CN104811054A (en) * 2015-04-10 2015-07-29 南车株洲电力机车研究所有限公司 Traction transformation device and method
CN106300272B (en) * 2015-06-09 2018-11-02 特变电工新疆新能源股份有限公司 A kind of power unit by-pass protective device
CN106329899B (en) * 2015-07-01 2018-10-16 南京南瑞继保电气有限公司 Fault current inhibits damper topological circuit and its control method and transverter
CN106024497A (en) * 2016-05-30 2016-10-12 全球能源互联网研究院 Auxiliary circuit for high-short-circuit turn-off direct current circuit breaker and control method for auxiliary circuit
CN106100404A (en) * 2016-06-07 2016-11-09 南方电网科学研究院有限责任公司 A kind of modularization multi-level converter and using method thereof
CN108347166B (en) * 2017-01-24 2019-11-05 台达电子企业管理(上海)有限公司 Power module train
CN106849635B (en) * 2017-04-01 2019-07-30 中国科学院电工研究所 Cascade connection multi-level inverter submodule pressure bypass circuit out of control
CN107147305B (en) * 2017-04-10 2019-06-28 中国科学院电工研究所 Multilevel converter submodule by-pass switch automatic triggering circuit
DE102017219499A1 (en) 2017-11-02 2019-05-02 Siemens Aktiengesellschaft Electrical arrangement with sub-modules and sub-modules as such
CN109546638A (en) * 2018-10-22 2019-03-29 南京南瑞继保电气有限公司 A kind of direct current energy-consuming device and control method
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009043229A1 (en) * 2009-09-28 2011-03-31 Siemens Aktiengesellschaft Short-circuiting device
CN102354955A (en) * 2011-07-22 2012-02-15 中国电力科学研究院 Protection method of modular multi-level current converter
CN102522882A (en) * 2011-11-28 2012-06-27 中国电力科学研究院 Protection circuit of converter power component

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009043229A1 (en) * 2009-09-28 2011-03-31 Siemens Aktiengesellschaft Short-circuiting device
CN102354955A (en) * 2011-07-22 2012-02-15 中国电力科学研究院 Protection method of modular multi-level current converter
CN102522882A (en) * 2011-11-28 2012-06-27 中国电力科学研究院 Protection circuit of converter power component

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