CN102798474B - High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector structure and preparation method thereof - Google Patents
High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector structure and preparation method thereof Download PDFInfo
- Publication number
- CN102798474B CN102798474B CN201210303727.8A CN201210303727A CN102798474B CN 102798474 B CN102798474 B CN 102798474B CN 201210303727 A CN201210303727 A CN 201210303727A CN 102798474 B CN102798474 B CN 102798474B
- Authority
- CN
- China
- Prior art keywords
- thermal conductance
- thermocouple bar
- silicon
- heat conductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000004020 conductor Substances 0.000 claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 238000010521 absorption reaction Methods 0.000 claims abstract description 81
- 238000002955 isolation Methods 0.000 claims abstract description 75
- 230000004888 barrier function Effects 0.000 claims abstract description 55
- 238000001514 detection method Methods 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 144
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 91
- 229910052710 silicon Inorganic materials 0.000 claims description 78
- 239000010703 silicon Substances 0.000 claims description 78
- 238000005530 etching Methods 0.000 claims description 67
- 239000002210 silicon-based material Substances 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 25
- 239000011241 protective layer Substances 0.000 claims description 24
- 238000002161 passivation Methods 0.000 claims description 22
- 230000001681 protective effect Effects 0.000 claims description 22
- 238000001020 plasma etching Methods 0.000 claims description 20
- 230000007797 corrosion Effects 0.000 claims description 12
- 238000005260 corrosion Methods 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 229910021418 black silicon Inorganic materials 0.000 abstract description 38
- 238000005516 engineering process Methods 0.000 abstract description 22
- 230000004044 response Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000000295 complement effect Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 66
- 229920002120 photoresistant polymer Polymers 0.000 description 52
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 28
- 229920005591 polysilicon Polymers 0.000 description 28
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 18
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 18
- 238000001259 photo etching Methods 0.000 description 16
- 230000004043 responsiveness Effects 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 9
- 238000007599 discharging Methods 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000005611 electricity Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- VYMDGNCVAMGZFE-UHFFFAOYSA-N phenylbutazonum Chemical compound O=C1C(CCCC)C(=O)N(C=2C=CC=CC=2)N1C1=CC=CC=C1 VYMDGNCVAMGZFE-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- PZZOEXPDTYIBPI-UHFFFAOYSA-N 2-[[2-(4-hydroxyphenyl)ethylamino]methyl]-3,4-dihydro-2H-naphthalen-1-one Chemical compound C1=CC(O)=CC=C1CCNCC1C(=O)C2=CC=CC=C2CC1 PZZOEXPDTYIBPI-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- -1 thermoelectric pile Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0215—Compact construction
- G01J5/022—Monolithic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention relates to a high-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector structure and a preparation method thereof. The high-performance MEMS thermopile infrared detector structure comprises a substrate, wherein the substrate is provided with a release barrier strip; the release barrier strip is internally provided with a thermal isolation cavity; a black silicon infrared absorption region is arranged right above the thermal isolation cavity; the black silicon infrared absorption region is located on the release barrier strip; a plurality of thermopiles is arranged outside the black silicon infrared absorption region; the thermopiles outside the black silicon infrared absorption region after being mutually connected in series are electrically connected to form an integral body; a detecting cold end of each thermopile is connected with the substrate through a first thermal-conduction electricity-isolation structure and a heat conductor below the first thermal-conduction electricity-isolation structure; a detecting hot end of each thermopile is contacted with the black silicon infrared absorption region through a second thermal-conduction electricity-isolation structure; and the second thermal-conduction electricity-isolation structure is located on the release barrier strip. The high-performance MEMS thermopile infrared detector structure, disclosed by the invention, has the advantages of simple structure, easy implementation, convenience for single-chip integration, high response rate and high detection rate, compatibility with CMOS (Complementary Metal-Oxide-Semiconductor Transistor) technology, wide application range, safety and reliability.
Description
Technical field
The present invention relates to a kind of infrared detector structure and preparation method thereof, especially a kind of high-performance MEMS thermopile IR detector structure and preparation method thereof, specifically a kind of Ji Yu ?the high-performance thermopile IR detector structure and preparation method thereof of silicon, belong to the technical field of MEMS.
Background technology
MEMS thermopile IR detector is a kind of typical device in sensor measuring field, it is one of core component forming by the sensor measuring devices such as temperature sensor, Root Mean square Converter, gas sensor, thermal flow meter, meanwhile, small size thermopile IR detector also can build infrared focal plane array (FPA) device and realize infrared imaging.Thermopile IR detector and infrared eye based on other principle of work (as thermoelectric type infrared eye and thermosensitive resistance type infrared eye etc.) compare have can survey constant radiant quantity, without being biased voltage, without chopper, be more suitable for the significantly overall merit such as mobile application and field studies.Thereby MEMS thermopile IR detector has very important significance for realizing more broad infrared acquisition application, it is civilian, military application prospect is wide, and commercial value and market potential are very huge.Can say, about the research and development of MEMS thermopile IR detector, form 21 century new hi-tech industry growth point.Can predict, MEMS thermopile IR detector will form application more widely aspect sensor measuring numerous.Particularly, along with micro-electromechanical technology, comprise the increasingly mature of the technological means such as device design, manufacture, packaging and testing, MEMS thermopile IR detector will highlight more importantly status.
Responsiveness and detectivity are to describe two important performance indexes of infrared eye, have determined the application potential of infrared eye in different field.Wherein, responsiveness is the ratio of device output electrical signals and incident ir radiant power, has characterized the sensitivity of infrared eye response infrared radiation, affects largely again the value of detectivity simultaneously.For thermopile IR detector, the temperature difference between thermocouple bar hot junction and cold junction is an important parameter of reflection device responsiveness and detectivity size.In order to increase temperature difference to improve responsiveness and the detectivity of device, need to keep as far as possible cold junction temperature consistent with base reservoir temperature, heat that infrared absorption district absorbs can effectively be transmitted to thermocouple bar in while hot junction.In order to reach this effect, between between cold junction and base material and hot junction and infrared absorption district, make hot conducting structure and just seem very necessary; The feature of considering electricity series connection between thermopair, this hot conducting structure also needs to possess the effect of electric isolation simultaneously.Existing thermopile IR detector is generally using substrate as heat sink body, cold junction and the substrate of thermocouple bar are directly connected, make again hot junction and uptake zone directly connect, because substrate and uptake zone material may have certain conductive capability, thereby adopt this method directly connecting to affect the output characteristics of thermopile IR detector, finally affect the performance of device.
For equal fixed thermopile IR detector such as structure (comprise thermal conductance logical/electric isolation structure), dimensional parameters and thermocouple material, the value of its responsiveness and detectivity depends on the absorption efficiency of infrared absorption district to infrared radiation.Silicon nitride film is commonly used for the material in infrared absorption district in the research of infrared eye, yet the high IR absorption efficiency that silicon nitride can reach within the scope of 1-12 mum wavelength is only 35% left and right, and then the thermopile IR detector based on silicon nitride infrared absorption layer cannot obtain very high responsiveness and detectivity.Given this, responsiveness and the detectivity of detector be improved, the absorption efficiency in infrared absorption district should be increased.In the many decades that infrared eye is studied, scientific research personnel has developed multiple material or the structure that has high-absorbility and can be used as infrared absorption district.Wherein, its surperficial nanometer coarse structure of Jin Heiyin and have good infrared absorption effect again because its thermal capacitance is lower, and then becomes a kind of material being favourably welcome in the research of infrared eye.While adopting golden black-materials to be infrared absorption district, the responsiveness of device and detectivity can correspondingly improve.Yet the black preparation technology of gold relates to the operations such as aggegation of evaporation of metal and metal nanoparticle, process is comparatively complicated, and the compatibility of itself and CMOS technique is also poor, generally can only after device architecture machines, be produced on the surface of structure again.Given this, take its large batch of production of detector that dark fund is uptake zone is just restricted.The resonance effect that 1/4 wave resonance structure produces while utilizing 1/4 wavelength of thickness of dielectric layers and incident infrared waves to match makes the absorption efficiency in infrared absorption district reach maximum.Yet, be subject to the restriction of condition of resonance, the infrared radiation that the detector that the 1/4 wave resonance structure of take is uptake zone can only sensitivity center's wavelength is a certain particular value.In addition, extremely strict harsh to the requirement of technological parameter while preparing 1/4 wave resonance structure, if slightly do not mate between thickness of dielectric layers and wavelength, will cause the very big decay of infrared absorption efficiency.
Black silicon is a kind of large-area nano post/needle construction that is forest shape, is once considered to a kind of revolutionary new material of electronic industry circle.Than traditional silicon materials, black silicon has high absorption efficiency to the light of near-infrared band.The method of the black silicon of preparation having proposed is at present varied, comprises as high-energy fly secondary laser auxiliary etch, metal catalytic galvanic corrosion and plasma dry etching etc.For processing cost, the convenient degree of technique and processing compatibility etc. are many-sided, consider, with plasma dry lithographic technique, prepare the method for black silicon and the most often use in conventional semiconductor technology.Existing researchist's report improves black silicon the method for thermopile IR detector part performance as infrared absorption layer material: in the foundation structure (comprising dielectric support film, thermoelectric pile, metal connecting structure etc.) that forms thermopile IR detector afterwards, by plasma enhanced chemical vapor deposition (PECVD) technology at surface deposition grow α-Si or Poly-Si layer, it is carried out to high energy ion injection, carry out subsequently incomplete dry etching, and then be processed into black silicon and at uptake zone location graphic, finally carried out the release of device architecture.In the method, the making of black silicon has utilized incomplete etching, and therefore the structure of black silicon and the controllability of dimensional parameters are lower; And before the black silicon of preparation, need silicon material layer to carry out high-octane Implantation to introduce defect, thereby increased the complexity of technique.In addition, the method, after PECVD α-Si or Poly-Si layer, has adopted the technical thought of " black silicon in advance, is gone after discharging ", therefore in structure dispose procedure, needs the black silicon of strict protection to avoid destroying.Yet black silicon is still had physics, a chemical property of silicon materials, therefore at follow-up XeF
2in dry release process, corrosion-vulnerable gas destroys; Again because in black silicon nanostructured there is certain height and density larger, adopt conventional method, as thin-film deposition protection or Coating glue protect, all can not realize effective protection.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of high-performance MEMS thermopile IR detector structure and preparation method thereof is provided, its simple in structure being easy to is realized, be convenient to monolithic integrated, responsiveness and detectivity are high, with CMOS process compatible, applied widely, safe and reliable.
According to technical scheme provided by the invention, described high-performance MEMS thermopile IR detector structure, comprises substrate; Described substrate is provided with release barrier strip, in described release barrier strip, has hot isolated chambers, has established ?silicon infrared absorption district directly over described hot isolated chambers, and the ?silicon infrared absorption district that states is positioned at and discharges on barrier strip; ?the outside in silicon infrared absorption district be provided with some thermoelectric pile ， ?some thermoelectric piles in outside, silicon infrared absorption district be mutually connected in series rear electrical connection and be integral; The corresponding Lin Jin of described thermoelectric pile ?the one end in silicon infrared absorption district form and survey hot junction, the corresponding Yuan Li of thermoelectric pile ?the one end in silicon infrared absorption district form and survey cold junction; The detection cold junction of thermoelectric pile is connected with substrate by the heat conductor of the first thermal conductance energising isolation structure and described the first thermal conductance energising isolation structure below, heat conductor is positioned at the outside of hot isolated chambers, and discharging between barrier strip and substrate, the first thermal conductance energising isolation structure is embedded at and discharges in barrier strip; The detection hot junction of thermoelectric pile by the second thermal conductance energising isolation structure Yu ?silicon infrared absorption district contact, the second thermal conductance energising isolation structure is positioned at and discharges on barrier strip.
Suo Shu ?silicon infrared absorption district Bao Kuo Jiang ?silicon materials body utilize reactive ion etching form ?silicon structure and connect Suo Shu ?the corrosion release channel in silicon infrared absorption district, described corrosion release channel is connected with hot isolated chambers.
Described thermoelectric pile comprise P type thermocouple bar and with the N-type thermocouple bar of described P type thermocouple bar corresponding matching, described N-type thermocouple bar and P type thermocouple bar are isolated by blocking separation layer; P type thermocouple bar is electrically connected to by the first connecting line in the one end that forms detection hot junction with N-type thermocouple bar, and forming one end of surveying cold junction, P type thermocouple bar is electrically connected to the N-type thermocouple bar in adjacent heat galvanic couple by the second connecting line, with thermoelectric pile that thermopair is electrically connected to form mutually.
The material of described the first thermal conductance energising isolation structure and the second thermal conductance energising isolation structure includes Si
3n
4.
Suo Shu ?the metal electrode of electrical connection is set on thermoelectric pile after silicon infrared absorption district outside serial connection.
Described N-type thermocouple bar is positioned at P type thermocouple bar below, and N-type thermocouple bar is positioned at and discharges on barrier strip, and the detection cold junction of N-type thermocouple bar contacts with the first thermal conductance energising isolation structure, and contacts with heat conductor by the first thermal conductance energising isolation structure; Lie prone across one end of the second thermal conductance energising isolation structure in the detection hot junction of N-type thermocouple bar, the other end of the second thermal conductance energising isolation structure Yu ?silicon infrared absorption district contact.
A preparation method for high-performance MEMS thermopile IR detector structure, the preparation method of described MEMS thermopile IR detector structure comprises the steps:
A, provide substrate, and on the surface of described substrate, substrate protective layer is set;
B, optionally shelter and the above-mentioned substrate protective layer of etching, to form substrate contact window above substrate, described substrate contact window connects substrate protective layer;
C, above above-mentioned substrate contact window deposit heat conductor, and on described heat conductor deposit heat conductor mask layer, described heat conductor is covered on substrate protective layer and is filled in substrate contact window;
D, optionally shelter and the above-mentioned heat conductor mask layer of etching, to form heat conductor etching window on heat conductor mask layer, described heat conductor etching window connects heat conductor mask layer, and in the inner side of substrate contact window; Utilize heat conductor etching window etching heat conductor until substrate protective layer obtains heat conductor through hole;
E, on above-mentioned heat conductor mask layer deposit supporting layer, described supporting layer is filled in heat conductor through hole and heat conductor etching window, and is covered on heat conductor mask layer, form to discharge barrier strip structure and dielectric support film above substrate;
F, optionally shelter and etching supporting layer, to form thermal conductance energising isolation opening in supporting layer, described thermal conductance energising isolation opening connects supporting layer and is also positioned at the outside that discharges barrier strip structure; Deposit thermal conductance energising separator layer above above-mentioned supporting layer, described thermal conductance energising separator layer is filled in thermal conductance energising isolation opening, and is covered on supporting layer;
G, optionally shelter and the above-mentioned thermal conductance of etching energising separator layer, to form the first thermal conductance energising spacing block and the second thermal conductance energising spacing block on above-mentioned supporting layer, described the first thermal conductance energising spacing block is positioned at supporting layer, and the second thermal conductance energising spacing block is positioned on supporting layer;
H, above-mentioned the first thermal conductance energising spacing block and and contiguous the second thermal conductance energising spacing block of described the first thermal conductance energising spacing block between the first thermocouple bar and the second thermocouple bar are set, the first thermocouple bar is different from the conductiving doping type of the second thermocouple bar, between the first thermocouple bar and the second thermocouple bar, by blocking separation layer, isolate, one end of the first thermocouple bar contacts with the first thermal conductance energising spacing block, and the other end contacts with the second thermal conductance energising spacing block;
I, above above-mentioned the second thermocouple bar, thermocouple bar protective seam is set, the region that described thermocouple bar protective seam covers comprises the second thermocouple bar and the first thermal conductance energising spacing block; Between adjacent the second thermal conductance energising spacing block Xing Cheng ?silicon materials body, Suo Shu ?silicon materials body and the second thermal conductance spacing block of switching on contact;
J, optionally shelter and the above-mentioned thermocouple bar of etching protective seam, to be formed for connecting the first thermocouple bar and the required electrical connection through hole of the second thermocouple bar;
K, above-mentioned, made splash-proofing sputtering metal layer on the substrate that is electrically connected to through hole, described metal level is filled in above-mentioned electrical connection through hole, optionally shelter and the above-mentioned metal level of etching, the first thermocouple bar is electrically connected to by the first connecting line with the second thermocouple bar in one end of the second thermal conductance energising spacing block; In one end of the first thermal conductance energising spacing block, the second thermocouple bar is electrically connected to the first thermocouple bar of proximity thermal galvanic couple by the second connecting line, and forms the first electric connector in the outside of the first thermal conductance energising isolation structure;
L, on the above-mentioned substrate surface of making the first connecting line, the second connecting line and the first electric connector deposit passivation layer, described passivation layer Fu Gai ?silicon materials body, thermocouple bar protective seam, the first connecting line, the second connecting line and the first electric connector;
M, optionally shelter with above-mentioned passivation layer of etching Yi ?on passivation layer on silicon materials body Xing Cheng ?silicon etching window Li Yong ?silicon etching Chuan Kou Dui ?silicon materials body carry out etching, until Ke Shi Dao ?heat conductor under silicon etching window, to form release aperture;
N, utilize to discharge barrier strip structure Shi Fang ?heat conductor under silicon materials body, to obtain hot isolated chambers;
O, utilize passivation layer do to be the spacer material layer of ?silicon materials surface coarse structure, ?silicon materials body is adopted to a RIE, to form base in the ?of ?silicon structure silicon infrared absorption district, form the second electric connector simultaneously.
In described step m and step n, on the inwall of release aperture Tu Fu ?the release barrier bed of silicon materials.
In described step h, the first thermocouple bar is N conductiving doping type, and the second thermocouple bar is P conductiving doping type.
In described step k, the material of metal level comprises Al.
Advantage of the present invention:
1, Cai Yong ?silicon infrared absorption district, because the infrared absorption efficiency of black silicon is high and then have the characteristic of property such as high responsiveness, high detectivity, thereby overcome with Si
3n
4for the explorer response rate of uptake zone material, the problem that detectivity is not high.
2, because of the preparation of black silicon to technological parameter (as growth SiO
2, Poly-Si thickness, the time of etching and thickness etc.) there is no a very harsh requirement, therefore the infrared detector structure based on black silicon is easier to realize, thereby overcome, take detector that 1/4 wave resonance structure the is uptake zone defect that requires the too high poor controllability of performance parameter then to technological parameter.
3, because black silicon all has very high infrared absorption efficiency in larger wavelength coverage, so the applicable wavelengths scope of this device is large, has overcome to take detector that 1/4 wave resonance structure is uptake zone and be only applicable to the deficiency of single wavelength scope.
4, preparation process of the present invention adopts the technical thought of " discharging in advance row after black silicon ", has effectively overcome the easily damaged problem of black silicon structure in " black silicon in advance, discharges rear row " technical method.
5, the detector that the present invention obtains has carried out respectively the design and fabrication of thermal conductance energising isolation structure in the cold junction/hot junction of thermoelectric pile, be conducive to further improve the performance of device.
6, the process of this device and CMOS technique are completely compatible, thereby are conducive to the integrated manufacture of monolithic of senser element structure and test circuit.
7, by novel high-performance MEMS thermopile IR detector provided by the invention, there is processing compatibility good, device architecture is easy to realize, be convenient to monolithic integrated, responsiveness, detectivity high can obtain extensive and actual application in the sensor measuring devices such as temperature sensor, gas sensor, thermal flow meter and system.
Accompanying drawing explanation
Fig. 1 ~ Figure 15 is the concrete implementing process step of the present invention cut-open view, wherein
Fig. 1 is that the present invention forms the cut-open view after substrate protective layer on substrate.
Fig. 2 is that the present invention forms the cut-open view after substrate contact window.
Fig. 3 is that the present invention forms the cut-open view after heat conductor mask layer.
Fig. 4 is that the present invention forms the cut-open view after heat conductor through hole in heat conductor.
Fig. 5 is that the present invention forms the cut-open view discharging after barrier strip structure.
Fig. 6 is that the present invention forms the cut-open view after thermal conductance energising separator layer.
Fig. 7 is that the present invention forms the cut-open view after the first thermal conductance energising spacing block and the second thermal conductance energising spacing block.
Fig. 8 is that the present invention forms the cut-open view after the first thermocouple bar and the second thermocouple bar.
Fig. 9 be deposit Xing Cheng of the present invention ?cut-open view after silicon materials body.
Figure 10 is that the present invention forms the cut-open view being electrically connected to after through hole.
Figure 11 is that the present invention forms the cut-open view after the first connecting line, the second connecting line and the first electric connector.
Figure 12 is the cut-open view after deposit passivation layer of the present invention.
Figure 13 is that the present invention forms release aperture and at release aperture inwall, applies the cut-open view discharging after barrier bed.
Figure 14 is that releasing heat conductor of the present invention forms the cut-open view after hot isolated chambers.
Figure 15 be Xing Cheng of the present invention ?silicon structure ?cut-open view behind silicon infrared absorption district.
Figure 16 be this Fa Ming ?stereoscan photograph and the infrared absorpting light spectra thereof of silicon.
Figure 17 is structural representation of the present invention.
Description of reference numerals: 1-the first thermal conductance energising isolation structure, 2-discharges barrier strip, 3-N type thermocouple bar, 4-P type thermocouple bar, 5-the second thermal conductance energising isolation structure, 6-corrodes release channel, 7-?silicon infrared absorption district, 8-hot-probing structure connecting line, 9-metal electrode, 101-substrate, 102-substrate protective layer, 202-substrate contact window, 302-heat conductor interstitital texture, 303-heat conductor, 304-heat conductor mask layer, 403-heat conductor through hole, 404-heat conductor etching window, 503-discharges barrier strip structure, 504-dielectric support film, 505-supporting layer, 605-thermal conductance energising isolation opening, 606-thermal conductance energising separator layer, 705-the first thermal conductance energising spacing block, 706-the second thermal conductance energising spacing block, 807-the first thermocouple bar, 808-blocks separation layer, 809-the second thermocouple bar, 810-hot junction, 908-thermocouple bar protective seam, 909-?silicon materials body, 910-lies prone trans-regional, 1008-is electrically connected to through hole, 1109-the first connecting line, 1110-the first electric connector, 1111-the second connecting line, 1211-passivation layer, 1309-release aperture, 1311-?silicon etching window, 1312-discharges barrier bed, the hot isolated chambers of 1403-, 1412-?the release barrier bed of silicon materials, 1509-?silicon structure and 1510-the second electric connector.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
As shown in figure 17: MEMS thermopile IR detector structure of the present invention comprises substrate 101; Described substrate 101 is provided with and discharges barrier strip 2, has hot isolated chambers 1403 in described release barrier strip 2, and discharging barrier strip 2 can play the effect that stops corrosion in releasing heat conductor material forms the process of hot isolated chambers 1403.Directly over described hot isolated chambers 1403 You ?silicon infrared absorption district 7, Suo Shu ?silicon infrared absorption district 7 be positioned at and discharge on barrier strip 2; ?the outside in silicon infrared absorption district 7 be provided with some thermoelectric pile ， ?the thermoelectric pile in 7 outsides, silicon infrared absorption district be mutually connected in series rear electrical connection and be integral; Embodiment of the present invention Zhong ， ?silicon infrared absorption district 7 be rectangle ， ?the both sides in silicon infrared absorption district 7 arrange symmetrical thermoelectric pile ， ?the thermoelectric pile of 7 both sides, silicon infrared absorption district by hot-probing structure connecting line 8, mutually after serial connection, be electrically connected to.The corresponding Lin Jin of described thermoelectric pile ?the one end in silicon infrared absorption district 7 form and survey hot junction, the corresponding Yuan Li of thermoelectric pile ?the one end in silicon infrared absorption district 7 form and survey cold junction; The detection cold junction of thermoelectric pile is connected with substrate 101 by the heat conductor 303 of the first thermal conductance energising isolation structure 1 and described the first thermal conductance energising isolation structure 1 below, heat conductor 303 is positioned at the outside of hot isolated chambers 1403, and discharging between barrier strip 2 and substrate 101, the first thermal conductance energising isolation structure 1 is embedded at and discharges in barrier strip 2; The detection hot junction of thermoelectric pile by the second thermal conductance energising isolation structure 5 Yu ?silicon infrared absorption district 7 contact, the second thermal conductance energising isolation structure 5 is positioned at and discharges on barrier strip 2.Outside another, the shape in ?silicon infrared absorption district 7 can be square, rectangle, circle, four angle compensation shapes etc., and ?silicon infrared absorption district 7 can adopt required shape.
Embodiment of the present invention Zhong Suo Shu ?silicon infrared absorption district 7 Bao Kuo Jiang ?silicon materials body 909 utilize rough polysilicon (Poly-Si) surface to can be used as the characteristic of spacer material supporting construction, and in conjunction with high selectivity RIE form ?silicon structure 1509 and connect Suo Shu ?the corrosion release channel 6 in silicon infrared absorption district 7, described corrosion release channel 6 is connected with hot isolated chambers 1403.Suo Shu ?the metal electrode 9 of electrical connection is all set in the hot-probing structure of 7 both sides, silicon infrared absorption district, by metal electrode 9, the hot-probing structure of 7 both sides, ?silicon infrared absorption district can be surveyed to the voltage obtaining and outwards export, logical superpotential variation can instead reflect the infrared heat that ?silicon infrared absorption district 7 absorbs.
Described thermoelectric pile comprise P type thermocouple bar 4 and with the N-type thermocouple bar 3 of described P type thermocouple bar 4 corresponding matching, described N-type thermocouple bar 3 is isolated by blocking separation layer 808 with P type thermocouple bar 4; P type thermocouple bar 4 is electrically connected to by the first connecting line 1109 with one end that N-type thermocouple bar 3 forms detection hot junction, and surveying cold junction, P type thermocouple bar 4 is electrically connected to the N-type thermocouple bar 3 in adjacent heat galvanic couple by the second connecting line 1111, so that the thermocouple bar in thermoelectric pile is mutually electrically connected to and is integral.
As shown in figure 15: the thermocouple of N-type described in specific embodiment of the invention bar 3 is positioned at P type thermocouple bar 4 belows.N-type thermocouple bar 3 is positioned at and discharges on barrier strip 2, and the detection cold junction of N-type thermocouple bar 3 contacts with the first thermal conductance energising isolation structure 1, and contacts with heat conductor 303 by the first thermal conductance energising isolation structure 1; Lie prone across one end of the second thermal conductance energising isolation structure 5 in the detection hot junction of N-type thermocouple bar 3, the other end of the second thermal conductance energising isolation structure 5 Yu ?silicon infrared absorption district 7 contact.Release barrier strip 2 in Figure 17 is equivalent to release barrier strip structure in Figure 15 503, the first thermal conductances energising isolation structures 1 and is equivalent to the first thermal conductance energising spacing block 705, the second thermal conductances energising isolation structures 2 and is equivalent to the second thermal conductance energising spacing block 706.
As shown in Fig. 1 ~ Figure 15: the thermopile IR detector structure of said structure can adopt following processing step to realize, and in following embodiment, if no special instructions, processing step is conventional method; Described reagent and material, if no special instructions, all can obtain from commercial channels.Comprise particularly:
A, provide substrate 101, and substrate protective layer 102 is set on the surface of described substrate 101;
As shown in Figure 1: on the surface of substrate 101 by the mode of the dry-oxygen oxidation SiO that grows
2material layer, to form substrate protective layer 102, the thickness of substrate protective layer 102 is 5000, and during dry-oxygen oxidation, temperature is 950 ℃, and the content of oxygen is 60%; Described substrate 101 adopts conventional material, and the material of substrate 101 comprises silicon.
B, optionally shelter and the above-mentioned substrate protective layer 102 of etching, to form substrate contact window 202 above substrate 101, described substrate contact window 202 connects substrate protective layers 102;
As shown in Figure 2: at the surperficial spin coating photoresist of substrate protective layer 102, and by photoetching process, in the position of the required formation thermocouple of correspondence bar cold junction, form the multistage opening figure of photoresist, the width of opening is 16 μ m, and every segment length is 35 μ m, and total length is about 500 μ m; Utilize RIE technology to carry out anisotropic etching to substrate protective layer 102, the figure of photoresist upper shed is transferred on substrate protective layer 102, form substrate contact window 202; Utilize oxygen plasma dry method to remove photoresist and the remove photoresist method that combines of sulfuric acid/hydrogen peroxide wet method is removed the photoresist of silicon chip surface.Wherein, the RF power of RIE etched substrate protective seam 102 is 300W, and chamber pressure is 200mTorr(millitorr), etching gas is CF
4, CHF
3, He mixed gas, corresponding flow is 10/50/12sccm(standard-state cubic centimeter per minute).
C, above above-mentioned substrate contact window 202 deposit heat conductor 303, and on described heat conductor 303 deposit heat conductor mask layer 304, described heat conductor 303 is covered on substrate protective layer 102 and is filled in substrate contact window 202;
As shown in Figure 3; utilize LPCVD(low pressure chemical vapor deposition forming on the substrate protective layer 102 of substrate contact window 202) technology growth heat conductor 303 and heat conductor mask layer 304; wherein; the material of heat conductor 303 is polysilicon (Poly-Si), and the material of heat conductor mask layer 304 is SiO
2, the thickness of heat conductor 303 is 2 μ m, the thickness of heat conductor mask layer 304 is 2000.Because the thickness of heat conductor 303 is thick a lot of compared with the thickness of substrate protective layer 102, so heat conductor 303 can fill substrate contact window 202 completely, forms the heat conductor interstitital texture 302 that is positioned at substrate contact window 202.Wherein, the boiler tube of working during LPCVD technology growth heat conductor 303 is 620 ℃, and pressure is 200mTorr, SiH
4flow be 130sccm; During LPCVD technology growth heat conductor mask layer 304, adopt TEOS((Tetraethyl Orthosilicate, ethyl orthosilicate)) source, source temperature is 50 ℃, and furnace tube temperature is 720 ℃, and pressure is 300mTorr, and oxygen flow is 200sccm.
D, optionally shelter and the above-mentioned heat conductor mask layer 304 of etching, to form heat conductor etching window 404 on heat conductor mask layer 304, described heat conductor etching window 404 connects heat conductor mask layers 304, and in the inner side of substrate contact window 202; Utilize heat conductor etching window 404 etching heat conductors 303 until substrate protective layer 102 obtains heat conductor through hole 403;
As shown in Figure 4, at the surperficial spin coating photoresist of heat conductor mask layer 304, and by photoetching process, on photoresist, form sealing opening, utilize subsequently RIE SiO
2method the figure that seals opening on photoresist is transferred on heat conductor mask layer 304, forming the sealing opening figure be positioned on heat conductor mask layer 304 is heat conductor etching window 404; Utilize oxygen plasma dry method to remove photoresist and the remove photoresist method that combines of sulfuric acid/hydrogen peroxide wet method is removed the photoresist of silicon chip surface; Adopt RIE technology anisotropic etching heat conductor 303, sealing opening figure on heat conductor mask layer 304 is transferred on heat conductor 303, the sealing opening figure forming on heat conductor 303 is heat conductor through hole 403, and the width of formed heat conductor through hole 403 is 1 μ m.Wherein, the etching gas adopting during RIE heat conductor 303 is Cl
2with the mixed gas of He, its flow is respectively 180 and 400 sccm, and RF power is 350 W, and chamber pressure is 400 mTorr.
E, on above-mentioned heat conductor mask layer 304 deposit supporting layer 505, described supporting layer 505 is filled in heat conductor through hole 403 and heat conductor etching window 404, and be covered on heat conductor mask layer 304, to form, discharge barrier strip structure 503 and dielectric support film 504 above substrate 101;
As shown in Figure 5, forming on the substrate 101 of heat conductor through hole 403 and heat conductor etching window 404, by LPCVD deposition techniques growth supporting layer 505, described supporting layer 505 is SiO
2, the thickness of supporting layer 505 is 8000, fills heat conductor through hole 403 and heat conductor etching window 404 completely, forms SiO
2discharge barrier strip structure 503, and form dielectric support membrane structure 504 simultaneously; Herein, release barrier strip structure 503 is corresponding with the release barrier strip 2 in Figure 17; Be used to form follow-up release barrier strip 2.
F, optionally shelter and etching supporting layer 505, with at the interior formation thermal conductance energising of supporting layer 505 isolation opening 605, described thermal conductance energising isolation opening 605 connects supporting layers 505 and is also positioned at the outside that discharges barrier strip structure 503; Deposit thermal conductance energising separator layer 606 above above-mentioned supporting layer 505, described thermal conductance energising separator layer 606 is filled in thermal conductance energising isolation opening 605, and is covered on supporting layer 605;
As shown in Figure 6, spin coating photoresist on supporting layer 505, and by photoetching process, in the position corresponding to required formation thermocouple bar cold junction, form a plurality of opening figure of photoresist, the width of each opening figure and length are respectively 15 and 35 μ m; Utilize RIE SiO
2technology is transferred to the opening figure on photoresist on supporting layer 505, to form thermal conductance energising isolation opening 605; Utilize oxygen plasma dry method to remove photoresist and the remove photoresist method that combines of sulfuric acid/hydrogen peroxide wet method is removed the photoresist of silicon chip surface; Subsequently, by LPCVD technology deposit growth thermal conductance energising separator layer 606 on supporting layer 505, the material of described thermal conductance energising separator layer 606 is Si
3n
4, the thickness of thermal conductance energising separator layer 606 is 8000.
G, optionally shelter and the above-mentioned thermal conductance of etching energising separator layer 606, to form the first thermal conductance energising spacing block 705 and the second thermal conductance energising spacing block 706 on above-mentioned supporting layer 505, described the first thermal conductance energising spacing block 705 is positioned at supporting layer 505, the second thermal conductance energising spacing blocks 706 and is positioned on supporting layer 605;
As shown in Figure 7, spin coating photoresist in thermal conductance energising separator layer 606, and by photoetching process, in the position corresponding to thermocouple bar cold junction and hot junction, form respectively the figure of a plurality of photoresists; Utilize RIE Si
3n
4technology is transferred to the figure on photoresist in thermal conductance energising separator layer 606, form the first thermal conductance energising spacing block 705 and the second thermal conductance energising spacing block 706, correspond respectively to the first thermal conductance energising isolation structure 1 and the second thermal conductance energising isolation structure 2 in Figure 17, wherein, the width of the first thermal conductance energising spacing block 705 is 20 μ m, length is 50 μ m, and the width of the second thermal conductance energising spacing block 706 is 20 μ m, and length is 50 μ m; Finally, utilize oxygen plasma dry method to remove photoresist and the remove photoresist method that combines of sulfuric acid/hydrogen peroxide wet method is removed the photoresist of silicon chip surface.Wherein, RIE Si
3n
4rF power be 150W, chamber pressure is 400mTorr, etching gas is CHF
3, He, SF
6mixed gas, corresponding flow is 7/100/30sccm.
H, above-mentioned the first thermal conductance energising spacing block 705 and and contiguous the second 706 of the spacing blocks of thermal conductance energising of described the first thermal conductance energising spacing block 705 the first thermocouple bar 807 and the second thermocouple bar 809 are set, the first thermocouple bar 807 is different from the conductiving doping type of the second thermocouple bar 809,809 of the first thermocouple bar 807 and the second thermocouple bars are isolated by blocking separation layer 808, one end of the first thermocouple bar 807 contacts with the first thermal conductance energising spacing block 705, and the other end contacts with the second thermal conductance energising spacing block 706;
As shown in Figure 8, utilize the Poly-Si layer that LPCVD deposition techniques growth a layer thickness is 2000, and it is carried out to N-type doping on the substrate 101 of realizing the first thermal conductance energising isolation structure 1 and the second thermal conductance energising isolation structure 2, doping content is 2.5e22cm
-3, implant energy is 80KeV; On N-type Poly-Si, to utilize LPCVD deposition techniques growth a layer thickness be 2000 blocks the Poly-Si layer that separation layer 808 and a layer thickness are 2000, and described Poly-Si layer is carried out to the doping of P type, and doping content is 5e22cm
-3, implant energy is 30KeV; Spin coating photoresist on P type Poly-Si layer, and by photoetching process, in the position of N-type thermocouple bar 3 correspondences, form the figure of photoresist; The material that blocks separation layer 808 is SiO
2, utilize RIE Poly-Si and RIE SiO
2technology is transferred to Poly-Si layer, SiO by photoetching offset plate figure
2on layer and Poly-Si layer, first form the first thermocouple bar 807, the cold junction of described the first thermocouple bar 807 and the first thermal conductance energising spacing block 705 join; Lie prone across half the second thermal conductance energising spacing block 706 in the hot junction 810 of the first thermocouple bar 807; Lie prone and match across the second thermal conductance energising region of spacing block 706 and the overlay area of follow-up thermocouple bar protective seam 908 in the hot junction 810 of the first thermocouple bar 807, the region that lie prone across the second thermal conductance energising spacing block 706 in the hot junction 810 of the first thermocouple bar 807 can arrange arbitrarily, as long as guarantee by thermocouple bar protective seam 908 realize hot junction 810 and follow-up formation ?the electrical isolation in silicon infrared absorption district 7 isolate, and the hot junction 810 of the first thermocouple bar 807 and the second thermal conductance spacing block 706 of switching on contacts; Utilize oxygen plasma dry method to remove photoresist and the remove photoresist method that combines of sulfuric acid/hydrogen peroxide wet method is removed the photoresist of silicon chip surface; Spin coating photoresist on P type Poly-Si layer again, and by photoetching process, at final thermocouple bar pattern correspondence position, form the figure of photoresist; Utilize RIE Poly-Si technology that photoetching offset plate figure is transferred on P type Poly-Si layer, form the second thermocouple bar 809; Finally, utilize oxygen plasma dry method to remove photoresist and the remove photoresist method that combines of sulfuric acid/hydrogen peroxide wet method is removed the photoresist of silicon chip surface.Wherein, the width of the first thermocouple bar 807, the second thermocouple bar 809 is 5 μ m, the length of the first thermocouple bar 807 is 120 μ m, the length of the second thermocouple bar 809 is 105 μ m, the logarithm that the second 706 of spacing blocks of thermal conductance energising of the first thermal conductance energising spacing block 705 and vicinity arrange the first thermocouple bar 807 and the second thermocouple bar 809 is 96, and places along the both sides symmetry of rectangle uptake zone.When the present invention specifically implements, the logarithm of the first thermocouple bar 807 and the second thermocouple bar 809 can arrange arbitrarily according to actual needs, is not limited to logarithm cited in the embodiment of the present invention and corresponding size.
The first thermocouple bar 807 of above-mentioned formation is corresponding to the same with the N-type thermocouple bar 3 in Figure 17, and the second thermocouple bar 809 is corresponding to the same with P type thermocouple bar 4; N-type thermocouple bar 3 occurs in pairs with P type thermocouple bar 4, forms a thermocouple structure.In the embodiment of the present invention, between N-type thermocouple bar 3 and P type thermocouple bar 4, form thermopair, P type thermocouple bar 4 is positioned at the top of N-type thermocouple bar 3, the hot junction of N-type thermocouple bar 3 is connected with the second thermal conductance energising isolation structure 2, the cold junction of N-type thermocouple bar 3 is connected with substrate 101 by the first thermal conductance energising isolation structure 1 and heat conductor 303, so that the temperature of the detection cold junction of whole thermoelectric pile and substrate 101 is consistent, by the first thermal conductance energising isolation structure 1 and the second thermal conductance energising isolation structure 5, realize the effect of electrical isolation isolation.
I, above above-mentioned the second thermocouple bar 809, thermocouple bar protective seam 908 is set, the region that described thermocouple bar protective seam 908 covers comprises the second thermocouple bar 809, the first thermal conductance energising spacing block 705, and half of the second thermal conductance energising spacing block 706; Between adjacent the second thermal conductance energising spacing block 706 Dian Ji ?silicon materials body 909, Suo Shu ?silicon materials body 909 and the second thermal conductance spacing block 706 of switching on contact;
As shown in Figure 9, on the substrate 101 of hot-probing structure, utilize the SiO that LPCVD deposition techniques growth thickness is 4000 realizing
2layer, subsequently, spin coating photoresist on thermocouple bar protective seam 908, and in thermocouple bar region, form large-area photoetching offset plate figure by photoetching process, utilize RIE SiO
2technology is transferred to SiO by photoetching offset plate figure
2on layer, form thermocouple bar protective seam 908, wherein, thermocouple bar protective seam 908 covers the first thermal conductance energising isolation structure 1 that is positioned at thermocouple bar cold junction completely, and the second thermal conductance energising isolation structure 2 that is positioned at thermocouple bar hot junction is not covered completely by thermocouple bar protective seam 908, the dimension width of exposed portions serve is 10 μ m, in the embodiment of the present invention, thermocouple bar protective seam 908 covers half of the second thermal conductance energising spacing block 706, thermocouple bar protective seam 908 not exclusively covers the second passage of heat electricity spacing block 706, be mainly Bao Zheng ?the contacting of silicon materials body 909 and the second passage of heat electricity spacing block 706, with guarantee follow-up Xing Cheng ?the heat that absorbs of silicon infrared absorption district 7 by the second passage of heat electricity spacing block 706, can be transmitted on thermopair, the area that thermocouple bar protective seam 908 covers the second thermal conductance energising spacing block 706 can also arrange as required, as long as can Bao Zheng ?the heat that absorbs of silicon infrared absorption district 7 by the second passage of heat electricity spacing block 706, can be transmitted on thermopair, utilize oxygen plasma dry method to remove photoresist and the remove photoresist method that combines of sulfuric acid/hydrogen peroxide wet method is removed the photoresist of silicon chip surface, after this, by LPCVD deposition techniques growth thickness be 2 μ m ?silicon materials body 909 Suo Shu ?the material of silicon materials body 909 be Poly-Si, then in position, uptake zone, form the graphical of Poly-Si layer, this Tu shape ?silicon materials body 909 lie prone equally across being positioned on the second thermal conductance energising isolation structure 2 in thermocouple bar hot junction, as lying prone as shown in the of trans-regional 910 in figure, utilize oxygen plasma dry method to remove photoresist and the remove photoresist method that combines of sulfuric acid/hydrogen peroxide wet method is removed the photoresist of silicon chip surface.In the embodiment of the present invention, black silicon material body 909 can also adopt PECVD(plasma enhanced chemical vapor deposition) deposition techniques growth obtains.
J, optionally shelter and the above-mentioned thermocouple bar of etching protective seam 908, to be formed for connecting the first thermocouple bar 807 and the required electrical connection through hole 1008 of the second thermocouple bar 809;
As shown in figure 10, at substrate surface spin coating photoresist, and by photoetching process, form the opening of photoetching offset plate figure in the position corresponding to being electrically connected to through hole 1008, utilize subsequently RIE SiO
2technology is transferred to the opening figure on photoresist on thermocouple bar protective seam 908 and is formed opening figure, also forms and is electrically connected to through hole 1008; Finally, utilize oxygen plasma dry method to remove photoresist and the remove photoresist method that combines of sulfuric acid/hydrogen peroxide wet method is removed the photoresist of silicon chip surface.The physical dimension of formed electrical connection through hole 1008 is 1 μ m * 1 μ m.
K, above-mentioned, made splash-proofing sputtering metal layer on the substrate 101 that is electrically connected to through hole 1008, described metal level is filled in above-mentioned electrical connection through hole 1008, optionally shelter and the above-mentioned metal level of etching, the first thermocouple bar 807 is electrically connected to by the first connecting line 1109 with the second thermocouple bar 809 in one end of the second thermal conductance energising spacing block 706; In one end of the first thermal conductance energising spacing block 705, the second thermocouple bar 809 is electrically connected to the first thermocouple bar 807 of proximity thermal galvanic couple by the second connecting line 1111, and forms the first electric connector 1110 in the outside of the first thermal conductance energising isolation structure 705;
As shown in figure 11, making sputter Al metal level on the substrate 101 that is electrically connected to through hole 1008, and make Al metal level at electrically connecting position and metal electrode location graphic by photoetching process, form the first connecting line 1109 and the second connecting line 1111 and the first electric connector 1110; Adopt subsequently the photoresist of the method removal silicon chip surface of organic washing.Wherein, the method for the graphical employing Al corrosive liquid wet etching of Al metal realizes, phosphoric acid in Al corrosive liquid (concentration is 60%～80%): acetic acid (concentration is 0.1%): nitric acid (concentration is 0.5%): the ratio of water is 16:1:1:2.
L, on above-mentioned substrate 101 surfaces that make the first connecting line 1109, the second connecting line 1111 and the first electric connector 1110 deposit passivation layer 1211, described passivation layer 1211 Fu Gai ?silicon materials body 909, the first connecting line 1109, the second connecting line 1111 and the first electric connector 1110;
As shown in figure 12, on the substrate 101 of having realized metal connection, adopt the SiO that PECVD deposition techniques growth thickness is 2000
2layer is as passivation layer 1211.Wherein, during PECVD deposit passivation layer 1211, the temperature of cavity is 270 ℃, and pressure is 250 mTorr, SiH
4concentration be 4.6%, N
2o flow is 150 sccm, and power is 103 W.
M, optionally shelter with the above-mentioned passivation layer 1211 Yi of etching ?on passivation layer 1211 on silicon materials body 909 Xing Cheng ?silicon etching window 1311 Li Yong ?silicon etching window 1311 Dui ?silicon materials body 909 carry out etching, until Ke Shi Dao ?heat conductor 303 under silicon etching window 1311, to form release aperture 1309;
As shown in figure 13, spin coating photoresist on passivation layer 1211 encloses in area except forming the opening of photoresist in the extra-regional large area region in thermocouple bar region and uptake zone photoresist by photoetching process in device corresponding to the region between uptake zone intra-zone, thermocouple bar and thermocouple bar and sealing opening; Subsequently, utilize respectively RIE SiO
2, RIE Poly-Si and RIE SiO
2technology is transferred to the opening figure of photoresist on different material layers, also form release aperture 1309 He ?silicon etching window 1311; In order to protect the Poly-Si in region, uptake zone not to be released gas, damage; corrosion opening sidewalls at uptake zone intra-zone applies one deck release barrier bed 1312 by photoetching; described release barrier bed 1312 is photoresist; the thickness that discharges barrier bed 1312 is 2.5 μ m; and then this size that has applied the corrosion release channel 6 after release barrier bed 1312 is dwindled; embodiment of the present invention Zhong ， ?silicon etching window 1311 and release aperture 1309 formed together corrosion release channel 6.
N, utilize to discharge barrier strip structure 503 Shi Fang ?heat conductor 303 under silicon materials body, to obtain hot isolated chambers 1403;
As shown in figure 14: because the material of heat conductor 303 is polysilicon, therefore adopt XeF
2heat conductor 303 in dry etching technology isotropic etching device architecture, erodes the polysilicon of heat conductor 303 by corrosion release channel 6, and then forms hot isolated chambers 1403.Figure 14 Zhong ?the release barrier bed 1412 of silicon materials corresponding consistent with the release barrier bed 1312 in Figure 13.
O, the spacer material layer that utilizes passivation layer 1211 to do as ?silicon materials body 909 surface roughness, adopt a RIE to ?silicon materials body 909, to form base in the ?of ?silicon structure 1509 silicon infrared absorption district 7, forms the second electric connector 1510 simultaneously.
As shown in figure 15, utilize Cu Cao ?silicon materials body 909 and Fu Gai ?silicon materials body 909 surfaces passivation layer 1211 Ke Zuo Wei ?the feature of spacer material layer of silicon materials body 909 surface roughness, adopt a RIE Poly-Si technology to process black silicon structure 1509, ?silicon structure 1509 is needle-like or column structure; In anisotropic etching process, passivation layer 1211 on the first electric connector 1110 is by complete etching, and then expose the second electric connector 1510, and the novel MEMS thermopile IR detector that finally to obtain take black silicon be uptake zone material, general structure schematic diagram is as shown in figure 17.The preparation in Zhong Heigui infrared absorption of the present invention district 7 has utilized coarse Poly-Si surface to can be used as the characteristic of side wall supporting structure, and realize in conjunction with the anisotropic etching technology of high selectivity, the material of preparing the black silicon material body 909(black silicon material body 909 in Hei Gui infrared absorption district 7 in the present invention is Poly-Si) floor can adopt PECVD or low-pressure chemical vapor deposition (LPCVD) deposition techniques to grow and obtain.
Wherein the stereoscan photograph of black silicon structure 1509 and infrared absorption spectrum thereof are as shown in figure 16.In the embodiment of the present invention, the second electric connector 1510 and the first electric connector 1110 are corresponding to the same, and corresponding to the same with the metal electrode 9 in Figure 17, for the result that whole thermopile infrared detection structure is surveyed, outwards export.
The thermopile IR detector structure being obtained by the manufacture method of the embodiment of the present invention, the calculated results of Specifeca tion speeification is: responsiveness is 249 V/W; Detectivity is 2.25E8 cmHz
1/2w
-1; Thermal response time is 15.3 ms; Noise density is 35 nV/Hz
1/2.
As shown in Fig. 1 ~ 17: during work Tong Guo ?silicon infrared absorption district 7 absorb ultrared heat ?the heat that absorbs of silicon infrared absorption district 7 by the second thermal conductance energising isolation structure 2 Chuan Dao Dao ?in the hot-probing structure of 7 both sides, silicon infrared absorption district, the detection cold junction of thermoelectric pile is connected with substrate 101 by the first thermal conductance energising isolation structure 1 and heat conductor 303, so that the temperature of cold junction temperature and substrate 101 is consistent, and reach the effect that electricity is isolated.N-type thermocouple bar 3 in thermoelectric pile forms thermocouple structure with P type thermocouple bar 4, the detection hot junction of thermoelectric pile can produce certain electric potential difference at cold junction with the temperature difference of surveying cold junction after absorbing heat, after a plurality of thermopair serial connections in thermoelectric pile, also by metal electrode 9, outwards export, by output voltage, judgement reaches required testing process.
This invention Cai Yong ?silicon infrared absorption district 7, because the infrared absorption efficiency of black silicon is high and then have the characteristic of property such as high responsiveness, high detectivity, thereby overcome with Si
3n
4for the explorer response rate of uptake zone material, the problem that detectivity is not high.Because of the preparation of black silicon to technological parameter (as growth SiO
2, Poly-Si thickness, the time of etching and thickness etc.) there is no a very harsh requirement, therefore the infrared detector structure based on black silicon is easier to realize, thereby overcome, take detector that 1/4 wave resonance structure the is uptake zone defect that requires the too high poor controllability of performance parameter then to technological parameter.Because black silicon all has very high infrared absorption efficiency in larger wavelength coverage, so the applicable wavelengths scope of this device is large, has overcome to take detector that 1/4 wave resonance structure is uptake zone and be only applicable to the deficiency of single wavelength scope.Preparation process of the present invention adopts the technical thought of " discharging in advance row after black silicon ", has effectively overcome the easily damaged problem of black silicon structure in " black silicon in advance, discharges rear row " technical method.Detector of the present invention has carried out respectively the design and fabrication of thermal conductance energising isolation structure in the cold junction/hot junction of thermoelectric pile, be conducive to further improve the performance of device.The process of this device and CMOS technique are completely compatible, thereby are conducive to the integrated manufacture of monolithic of senser element structure and test circuit.By novel high-performance MEMS thermopile IR detector provided by the invention, there is processing compatibility good, device architecture is easy to realize, be convenient to monolithic integrated, responsiveness, detectivity high can obtain extensive and actual application in the sensor measuring devices such as temperature sensor, gas sensor, thermal flow meter and system.
Claims (6)
1. a high-performance MEMS thermopile IR detector structure, comprises substrate (101); It is characterized in that: described substrate (101) is provided with and discharges barrier strip (2), in described release barrier strip (2), there is hot isolated chambers (1403), directly over described hot isolated chambers (1403) You ?silicon infrared absorption district (7), Suo Shu ?silicon infrared absorption district (7) be positioned at and discharge on barrier strip (2); ?the outside in silicon infrared absorption district (7) be provided with some thermoelectric pile ， ?some thermoelectric piles in outside, silicon infrared absorption district (7) be mutually connected in series rear electrical connection and be integral; The corresponding Lin Jin of described thermoelectric pile ?the one end in silicon infrared absorption district (7) form and survey hot junction, the corresponding Yuan Li of thermoelectric pile ?the one end in silicon infrared absorption district (7) form and survey cold junction; The detection cold junction of thermoelectric pile is connected with substrate (101) by the heat conductor (303) of the first thermal conductance energising isolation structure (1) and described the first thermal conductance energising isolation structure (1) below, heat conductor (303) is positioned at the outside of hot isolated chambers (1403), and be positioned between release barrier strip (2) and substrate (101), the first thermal conductance energising isolation structure (1) is embedded at and discharges in barrier strip (2); The detection hot junction of thermoelectric pile by the second thermal conductance energising isolation structure (5) Yu ?silicon infrared absorption district (7) contact, the second thermal conductance energising isolation structure (5) is positioned at and discharges on barrier strip (2);
Suo Shu ?silicon infrared absorption district (7) Bao Kuo Jiang ?silicon materials body (909) utilize reactive ion etching form ?silicon structure (1509) and connect Suo Shu ?the corrosion release channel (6) in silicon infrared absorption district (7), described corrosion release channel (6) is connected with hot isolated chambers (1403);
Described thermoelectric pile comprise P type thermocouple bar (4) and with the N-type thermocouple bar (3) of described P type thermocouple bar (4) corresponding matching, described N-type thermocouple bar (3) is isolated by blocking separation layer (808) with P type thermocouple bar (4); P type thermocouple bar (4) is electrically connected to by the first connecting line (1109) in the one end that forms detection hot junction with N-type thermocouple bar (3), and forming one end of surveying cold junction, P type thermocouple bar (4) is electrically connected to the N-type thermocouple bar (3) in adjacent heat galvanic couple by the second connecting line (1111), so that thermopair is mutually electrically connected to and is integral formation thermoelectric pile;
Suo Shu ?the metal electrode (9) of electrical connection is set on thermoelectric pile after silicon infrared absorption district (7) outside serial connection;
Described N-type thermocouple bar (3) is positioned at P type thermocouple bar (4) below, N-type thermocouple bar (3) is positioned at and discharges on barrier strip (2), the detection cold junction of N-type thermocouple bar (3) contacts with the first thermal conductance energising isolation structure (1), and contacts with heat conductor (303) by the first thermal conductance energising isolation structure (1); Lie prone across one end of the second thermal conductance energising isolation structure (5) in the detection hot junction of N-type thermocouple bar (3), the other end of the second thermal conductance energising isolation structure (5) Yu ?silicon infrared absorption district (7) contact.
2. high-performance MEMS thermopile IR detector structure according to claim 1, is characterized in that: the material of described the first thermal conductance energising isolation structure (1) and the second thermal conductance energising isolation structure (5) includes Si
3n
4.
3. a preparation method for high-performance MEMS thermopile IR detector structure, is characterized in that, the preparation method of described MEMS thermopile IR detector structure comprises the steps:
(a), substrate (101) is provided, and substrate protective layer (102) is set on the surface of described substrate (101);
(b), optionally shelter and the above-mentioned substrate protective layer of etching (102), to form substrate contact window (202) in substrate (101) top, described substrate contact window (202) connects substrate protective layer (102);
(c), at above-mentioned substrate contact window (202) top deposit heat conductor (303), and at the upper deposit heat conductor mask layer (304) of described heat conductor (303), described heat conductor (303) is covered in substrate protective layer (102) and goes up and be filled in substrate contact window (202);
(d), optionally shelter and the above-mentioned heat conductor mask layer of etching (304), above to form heat conductor etching window (404) at heat conductor mask layer (304), described heat conductor etching window (404) connects heat conductor mask layer (304), and in the inner side of substrate contact window (202); Utilize heat conductor etching window (404) etching heat conductor (303) until substrate protective layer (102) obtains heat conductor through hole (403);
(e), at the upper deposit supporting layer (505) of above-mentioned heat conductor mask layer (304), described supporting layer (505) is filled in heat conductor through hole (403) and heat conductor etching window (404), and it is upper to be covered in heat conductor mask layer (304), to form and to discharge barrier strip structure (503) and dielectric support film (504) in substrate (101) top;
(f), optionally shelter and etching supporting layer (505), to form thermal conductance energising isolation opening (605) in supporting layer (505), described thermal conductance energising isolation opening (605) connects supporting layer (505) and is positioned at the outside that discharges barrier strip structure (503); In above-mentioned supporting layer (505) top deposit thermal conductance energising separator layer (606), described thermal conductance energising separator layer (606) is filled in thermal conductance energising isolation opening (605), and is covered on supporting layer (505);
(g), optionally shelter and the above-mentioned thermal conductance energising of etching separator layer (606), with switch in upper formation the first thermal conductance of above-mentioned supporting layer (505) spacing block (705) and the second thermal conductance energising spacing block (706), described the first thermal conductance energising spacing block (705) is positioned at supporting layer (505), and the second thermal conductance energising spacing block (706) is positioned on supporting layer (505);
(h), above-mentioned the first thermal conductance energising spacing block (705) and and contiguous the second thermal conductance energising spacing block (706) of described the first thermal conductance energising spacing block (705) between the first thermocouple bar (807) and the second thermocouple bar (809) are set, the first thermocouple bar (807) is different from the conductiving doping type of the second thermocouple bar (809), between the first thermocouple bar (807) and the second thermocouple bar (809), by blocking separation layer (808), isolate, one end of the first thermocouple bar (807) contacts with the first thermal conductance energising spacing block (705), the other end contacts with the second thermal conductance energising spacing block (706),
(i), in above-mentioned the second thermocouple bar (809) top, thermocouple bar protective seam (908) is set, the region that described thermocouple bar protective seam (908) covers comprises the second thermocouple bar (809) and the first thermal conductance energising spacing block (705); Between adjacent the second thermal conductance energising spacing block (706) Xing Cheng ?silicon materials body (909), Suo Shu ?silicon materials body (909) and the second thermal conductance spacing block (706) of switching on contact;
(j), optionally shelter and the above-mentioned thermocouple bar of etching protective seam (908), to be formed for connecting the first thermocouple bar (807) and the required electrical connection through hole (1008) of the second thermocouple bar (809);
(k), at the upper splash-proofing sputtering metal layer of above-mentioned electrical connection through hole (1008), described metal level is filled in above-mentioned electrical connection through hole (1008), optionally shelter and the above-mentioned metal level of etching, the first thermocouple bar (807) is electrically connected to by the first connecting line (1109) with the second thermocouple bar (809) in one end of the second thermal conductance energising spacing block (706); One end at the first thermal conductance energising spacing block (705), the second thermocouple bar (809) is electrically connected to the first thermocouple bar (807) of proximity thermal galvanic couple by the second connecting line (1111), and forms the first electric connector (1110) in the outside of the first thermal conductance energising isolation structure (705);
(l), on above-mentioned substrate (101) surface that makes the first connecting line (1109), the second connecting line (1111) and the first electric connector (1110) deposit passivation layer (1211), described passivation layer (1211) Fu Gai ?silicon materials body (909), the first connecting line (1109), the second connecting line (1111) and the first electric connector (1110);
(m), optionally shelter with the above-mentioned passivation layer of etching (1211) Yi ?the upper Xing of passivation layer (1211) on silicon materials body (909) Cheng ?silicon etching window (1311) Li Yong ?silicon etching window (1311) Dui ?silicon materials body (909) carry out etching, until Ke Shi Dao ?heat conductor (303) under silicon etching window (1311), to form release aperture (1309);
(n), utilize to discharge barrier strip structure (503) Shi Fang ?heat conductor (303) under silicon materials body (909), to obtain hot isolated chambers (1403);
(o), utilizing passivation layer (1211) to do is the spacer material layer of ?silicon materials body (909) surface roughness; ?silicon materials body (909) is adopted to RIE one time, with form Ji Yu ?silicon structure (1509) ?silicon infrared absorption district (7), form the second electric connector (1510) simultaneously.
4. the preparation method of high-performance MEMS thermopile IR detector structure according to claim 3, is characterized in that: in described step (m) and step (n), on the inwall of release aperture (1309) Tu Fu ?the release barrier bed (1412) of silicon materials.
5. the preparation method of high-performance MEMS thermopile IR detector structure according to claim 3, is characterized in that: in described step (h), the first thermocouple bar (807) is N conductiving doping type, and the second thermocouple bar (809) is P conductiving doping type.
6. the preparation method of high-performance MEMS thermopile IR detector structure according to claim 3, is characterized in that: in described step (k), the material of metal level is Al.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210303727.8A CN102798474B (en) | 2012-08-23 | 2012-08-23 | High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector structure and preparation method thereof |
| PCT/CN2013/000064 WO2014029189A1 (en) | 2012-08-23 | 2013-01-21 | High performance mems thermopile infrared detector structure and method of manufacturing same |
| US14/412,404 US9117949B2 (en) | 2012-08-23 | 2013-01-21 | Structure and fabrication method of a high performance MEMS thermopile IR detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210303727.8A CN102798474B (en) | 2012-08-23 | 2012-08-23 | High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102798474A CN102798474A (en) | 2012-11-28 |
| CN102798474B true CN102798474B (en) | 2014-02-19 |
Family
ID=47197661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210303727.8A Active CN102798474B (en) | 2012-08-23 | 2012-08-23 | High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector structure and preparation method thereof |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9117949B2 (en) |
| CN (1) | CN102798474B (en) |
| WO (1) | WO2014029189A1 (en) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102798474B (en) * | 2012-08-23 | 2014-02-19 | 江苏物联网研究发展中心 | High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector structure and preparation method thereof |
| CN102829880B (en) * | 2012-08-23 | 2014-04-16 | 江苏物联网研究发展中心 | High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector based on black silicon and preparation method thereof |
| CN103043602B (en) * | 2013-01-05 | 2015-03-18 | 江苏物联网研究发展中心 | Fabrication method of measuring mechanism for seebeck coefficient of nano-scale material |
| CN103048350B (en) * | 2013-01-05 | 2014-09-24 | 江苏物联网研究发展中心 | Measuring mechanism for seebeck coefficient of nano-scale material and fabrication method of measuring mechanism |
| CN103207021B (en) * | 2013-03-01 | 2015-02-11 | 江苏物联网研究发展中心 | High-performance micro-electromechanical system (MEMS) thermopile infrared detector structure and manufacturing method thereof |
| CN103151452B (en) * | 2013-03-26 | 2015-08-19 | 中国航天科工集团第二研究院二〇三所 | A kind of heap of the plane thermoelectric for calorimeter manufacture method |
| CN103245421B (en) * | 2013-05-16 | 2015-06-10 | 江苏物联网研究发展中心 | Pyrogenicity type MEMS (micro-electro-mechanical system) thermopile infrared detector structure and manufacturing method thereof |
| CN103698020B (en) * | 2013-12-02 | 2018-12-28 | 中北大学 | Thermopile IR gas detector and its processing method of the laminated film as infrared absorption layer |
| CN103700722B (en) * | 2013-12-02 | 2018-03-30 | 中北大学 | Overhead type thermopile IR detector |
| US9945928B2 (en) * | 2014-10-30 | 2018-04-17 | Bastille Networks, Inc. | Computational signal processing architectures for electromagnetic signature analysis |
| US9851258B2 (en) * | 2014-11-04 | 2017-12-26 | Maxim Integrated Products, Inc. | Thermopile temperature sensor with a reference sensor therein |
| US10439118B2 (en) * | 2014-12-04 | 2019-10-08 | Maxim Integrated Products, Inc. | MEMS-based wafer level packaging for thermo-electric IR detectors |
| US9846083B2 (en) * | 2014-12-17 | 2017-12-19 | Maxim Integrated Products, Inc. | Ambient temperature measurement sensor |
| CN104555903B (en) * | 2015-01-21 | 2016-07-06 | 江苏物联网研究发展中心 | Summoning material preparation method based on autoregistration plasma etch process |
| JP6398810B2 (en) * | 2015-03-12 | 2018-10-03 | オムロン株式会社 | Internal temperature measuring device and temperature difference measuring module |
| JP6398808B2 (en) * | 2015-03-12 | 2018-10-03 | オムロン株式会社 | Internal temperature measuring device and sensor package |
| JP6398806B2 (en) * | 2015-03-12 | 2018-10-03 | オムロン株式会社 | Sensor package |
| CN107290067B (en) * | 2016-04-01 | 2021-07-30 | 上海巨哥科技股份有限公司 | Uncooled infrared detector with low time constant |
| US9915567B2 (en) * | 2016-06-28 | 2018-03-13 | Excelitas Technologies Singapore Pte. Ltd. | Unreleased thermopile infrared sensor using material transfer method |
| CN107359152B (en) * | 2017-07-10 | 2019-06-18 | 东南大学 | The GaAs base of internet of things oriented has the MESFET device of heat to electricity conversion function |
| CN108388735B (en) * | 2018-02-28 | 2022-04-22 | 深圳市恒凯微电子科技有限公司 | Method for designing integrated circuit with porous medium layer |
| CN111397746A (en) * | 2020-04-15 | 2020-07-10 | 无锡物联网创新中心有限公司 | Self-testing MEMS thermopile infrared detector |
| CN111540824B (en) * | 2020-05-09 | 2023-04-18 | 中国科学院微电子研究所 | Thermopile and manufacturing method thereof |
| CN111829662A (en) * | 2020-06-18 | 2020-10-27 | 桂林电子科技大学 | Thermopile infrared detector based on bionic infrared sensor |
| CN112577612B (en) * | 2020-12-09 | 2022-04-08 | 中国电子科技集团公司第四十四研究所 | Black silicon plasmon auxiliary absorption thermopile chip and manufacturing method thereof |
| CN113023664B (en) * | 2021-03-01 | 2023-08-29 | 苏州敏芯微电子技术股份有限公司 | Photoelectric detection chip and preparation method thereof |
| CN113720455A (en) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | Infrared detector based on CMOS (complementary Metal oxide semiconductor) process |
| CN116963574B (en) * | 2023-09-18 | 2023-12-15 | 上海芯龙半导体技术股份有限公司 | Infrared thermopile sensor and manufacturing method thereof |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3258066B2 (en) * | 1991-03-05 | 2002-02-18 | シチズン時計株式会社 | Manufacturing method of thermopile type infrared sensor |
| JPH11153490A (en) * | 1997-11-19 | 1999-06-08 | Nissan Motor Co Ltd | Semiconductor infrared ray detector |
| CN1168149C (en) * | 2001-08-03 | 2004-09-22 | 中国科学院上海冶金研究所 | Micromechanical thermoelectric pile infrared detector array with inclined drawn suspension beam support membrane structure |
| DE10144343A1 (en) * | 2001-09-10 | 2003-03-27 | Perkinelmer Optoelectronics | Sensor for contactless measurement of a temperature |
| US6828172B2 (en) * | 2002-02-04 | 2004-12-07 | Delphi Technologies, Inc. | Process for a monolithically-integrated micromachined sensor and circuit |
| CN100562725C (en) * | 2003-09-29 | 2009-11-25 | 中国科学院上海微系统与信息技术研究所 | Micromachined thermopile infrared detector and manufacture method thereof |
| CN100440561C (en) * | 2006-11-17 | 2008-12-03 | 中国科学院上海微系统与信息技术研究所 | Infrared detector of micro mechanical thermopile, and preparation method |
| JP2010109073A (en) * | 2008-10-29 | 2010-05-13 | Ngk Spark Plug Co Ltd | Infrared detecting element and sensor, and method of manufacturing infrared detecting element |
| CN202066597U (en) * | 2010-11-22 | 2011-12-07 | 烟台艾睿光电科技有限公司 | Miniature bridge type infrared temperature measuring sensor |
| CN102798474B (en) * | 2012-08-23 | 2014-02-19 | 江苏物联网研究发展中心 | High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector structure and preparation method thereof |
| CN102829880B (en) * | 2012-08-23 | 2014-04-16 | 江苏物联网研究发展中心 | High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector based on black silicon and preparation method thereof |
-
2012
- 2012-08-23 CN CN201210303727.8A patent/CN102798474B/en active Active
-
2013
- 2013-01-21 US US14/412,404 patent/US9117949B2/en active Active
- 2013-01-21 WO PCT/CN2013/000064 patent/WO2014029189A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014029189A1 (en) | 2014-02-27 |
| CN102798474A (en) | 2012-11-28 |
| US9117949B2 (en) | 2015-08-25 |
| US20150137304A1 (en) | 2015-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102798474B (en) | High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector structure and preparation method thereof | |
| CN102829880B (en) | High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector based on black silicon and preparation method thereof | |
| CN103245421B (en) | Pyrogenicity type MEMS (micro-electro-mechanical system) thermopile infrared detector structure and manufacturing method thereof | |
| CN103207021B (en) | High-performance micro-electromechanical system (MEMS) thermopile infrared detector structure and manufacturing method thereof | |
| CN103698020B (en) | Thermopile IR gas detector and its processing method of the laminated film as infrared absorption layer | |
| CN112113670B (en) | MEMS thermopile infrared detector and preparation method thereof | |
| TWI666763B (en) | Semiconductor image sensor | |
| CN106124066A (en) | The microbolometer of a kind of high fill factor and preparation method | |
| CN103048350B (en) | Measuring mechanism for seebeck coefficient of nano-scale material and fabrication method of measuring mechanism | |
| KR100535841B1 (en) | Thermal infrared image pickup device and manufacturing method thereof | |
| CN211920871U (en) | Infrared sensor | |
| CN112591706A (en) | Thermopile sensor system for integrated CMOS circuits and method of fabrication | |
| CN110165043B (en) | Thermoelectric infrared detector based on black film and preparation method thereof | |
| CN104501983B (en) | Folded film temperature sensor and manufacturing method thereof | |
| CN105576070A (en) | Cavity formation method, thermopile infrared detector and manufacturing method | |
| KR20040109999A (en) | Infrared ray sensor using silicon oxide film as a infrared ray absorption layer and method for fabricating the same | |
| CN112802956B (en) | MEMS thermopile infrared detector and manufacturing method thereof | |
| CN103043602B (en) | Fabrication method of measuring mechanism for seebeck coefficient of nano-scale material | |
| TWI815153B (en) | Fir sensor device with two absorption layers and manufacturing method thereof | |
| CN105070822A (en) | Formation of a thermopile sensor utilizing cmos fabrication techniques | |
| CN113104804A (en) | Infrared thermopile sensor, chip and preparation method thereof | |
| KR101408905B1 (en) | Method for fabricating MEMS devices with high response | |
| CN112133818B (en) | Cantilever beam thermopile and preparation method thereof | |
| JP4032521B2 (en) | Sensor manufacturing method | |
| CN214121427U (en) | Thermopile sensor system integrated with CMOS circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200810 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3, building 15, room 328 Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd. Address before: 214135 Jiangsu New District of Wuxi City Linghu Road No. 200 China Sensor Network International Innovation Park C building 4 floor Patentee before: JIANGSU R&D CENTER FOR INTERNET OF THINGS |
|
| TR01 | Transfer of patent right |