CN102794699A - Monitoring method for grinding process of shallow trench isolation technology - Google Patents
Monitoring method for grinding process of shallow trench isolation technology Download PDFInfo
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- CN102794699A CN102794699A CN2012103355425A CN201210335542A CN102794699A CN 102794699 A CN102794699 A CN 102794699A CN 2012103355425 A CN2012103355425 A CN 2012103355425A CN 201210335542 A CN201210335542 A CN 201210335542A CN 102794699 A CN102794699 A CN 102794699A
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Abstract
The invention discloses a monitoring method for a grinding process of a shallow trench isolation technology. The monitoring method comprises the following steps of: firstly, before a product is ground, monitoring grinding at fixed period by a monitoring silicon wafer; then, predicating possible grinding influences on the product according to damage conditions of regions which are located in different gradients and similar with active regions of the monitoring silicon wafer; and according to the predication, artificially intervening and correcting a grinding cabinet in time to ensure the accurate control of a grinding process. The monitoring silicon wafer disclosed by the invention is provided with a series of patterns which are distributed in a gradient manner and have different pattern densities, and the pattern density range of the patterns covers the conditions of various normal products, so that a grinding speed drifting condition of each region of the silicon wafer with the similar pattern arrangement of an actual product can be obtained, and the grinding influences on the product can be accurately predicted, therefore, a manufacturing process can be conveniently adjusted in time, the stability of the manufacturing process is ensured, and the perpetual vulnerable damages are reduced to be minimum.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, relate in particular to a kind of monitoring method of shallow trench isolation technology grinding technics.
Background technology
Semiconductor integrated circuit includes source region and the isolated area between active area usually, and these isolated areas formed before making active device.Along with semiconductor technology gets into the deep-submicron epoch, the active area isolation layer of the following device of 0.18 μ m adopts shallow ditch groove separation process (STI, Shallow Trench Isolation) to make mostly.
Existing fleet plough groove isolation structure mainly comprises following processing step: at first; On Semiconductor substrate, form the photoresist of pad oxide, silicon nitride layer and patterning successively; Wherein, Said silicon nitride layer prevents among shallow ditch groove separation process as the layer that stops of grinding technics or etching technics, hurts the Semiconductor substrate of the fabrication region of integrated circuit; Then, be mask with the photoresist of patterning, the etch silicon nitride layer divests after the photoresist, with the silicon nitride layer after the etching as etching mask and down etching pad oxide and Semiconductor substrate to certain depth, forms shallow trench again; Then, form lining oxide layer in the sidewall and the bottom of shallow trench; Then, megohmite insulant (like silica) is inserted in the shallow trench, and covered lining oxide layer sidewall and whole silicon nitride layer, form isolating oxide layer; Then, the isolating oxide layer of inserting is carried out planarization, remove the isolating oxide layer on the silicon nitride layer; At last, remove silicon nitride layer and pad oxide.
Wherein, in the manufacture craft of above-mentioned fleet plough groove isolation structure, flatening process is a key factor that influences the fleet plough groove isolation structure performance.Usually, the technology of flatening process employing is cmp (CMP) technology.Yet according to the characteristic of chemical mechanical milling tech, the pattern of grinding rate and bottom can be relevant, that is to the large-area more mill layer of treating, its grinding rate is more little; Otherwise, treat that the mill aspect is long-pending more little, its grinding rate is then big more.Influence because the semiconductor wafer surface grinding rate is unequal, causes your overmastication of semiconductor wafer of part in one's power, and that the semiconductor wafer surface of part grinds is not enough, makes on the speed controlling very difficulty.
Particularly; Along with the continuous progress of integrated circuit fabrication process, the improving constantly of chip integration, crucial (CD) size will become littler and littler; Some device special function zones independent active area will occur and be present in large stretch of spacious district; And owing to existing STI CMP technology shows different polishing speed to pattern density is different, thereby very easily causing active area (AA) the upper strata oxide layer grinding of independent fritter in the spacious district of this product too fast, the nitration case that directly causes lower floor to play a protective role is overground; To such an extent as to lose of the effect of original when design, make the active area permanent damage to lower floor's device active region protection.
In order to address the above problem, the method for industry employing at present is to utilize a planless control sheet before product grinds, to grind the monitoring in advance of rate, thereby in advance the grinding rate is forecast.
Yet,, thereby can't monitor the active area degree of impairment that the faint drift of grinding rate is caused under the different graphic because the control sheet that above-mentioned present method adopts does not have figure.Thereby possibly cause permanent mortality damage to active area, shown in the red line collar region among Fig. 1 and Fig. 2.
Therefore, be necessary existing grinding rate method for supervising is improved, to satisfy the purpose of the faint drift of grinding rate under the monitoring different graphic.
Summary of the invention
The object of the present invention is to provide a kind of monitoring method of shallow trench isolation technology grinding technics, with the faint drift of grinding rate under the effective monitoring different graphic.
For addressing the above problem, the present invention proposes a kind of monitoring method of shallow trench isolation technology grinding technics, and this method comprises the steps:
Before product grinds, adopt the monitoring silicon chip regularly to grind monitoring, wherein, and the pattern that has the different Gradient distribution of a series of pattern densities on the said monitoring silicon chip, its pattern density scope contains the situation of various normal product;
The damage status with the similar zone of active area that is arranged in different gradients from said monitoring silicon chip is predicted the grinding influence that product possibly will receive;
According to above-mentioned prediction, intervene artificially and timely align hone board, to guarantee to grind the accurate control of processing procedure.
Optional; The method for designing of said monitoring silicon chip is: at first fill arrangement design through the redundant pattern of different gradients and go out a cover Lithographic template; Then on semi-conductor silicon chip, obtain the different Gradient distribution designed patterns of a series of pattern densities, thereby obtain said monitoring silicon chip.
Optional, the similar zone of said and active area is active area redundant pattern zone.
Optional, said grinding technics is a chemical mechanical milling tech.
Compared with prior art, the monitoring method of shallow trench isolation technology grinding technics provided by the invention through at first before product grinds, adopts the monitoring silicon chip regularly to grind monitoring; Then the damage status with the similar zone of active area that is arranged in different gradients from said monitoring silicon chip is predicted the grinding influence that product possibly will receive; And, intervene artificially and timely align hone board, to guarantee to grind the accurate control of processing procedure according to above-mentioned prediction; Because the pattern that has the different Gradient distribution of a series of pattern densities on the said monitoring silicon chip provided by the invention; Its pattern density scope contains the situation of various normal product; Thereby can obtain and arrange each regional grinding rate drift situation of akin silicon chip of actual product figure, with the grinding influence of predicting that exactly product possibly will receive, so that timely adjusting process processing procedure; Guarantee the stability of processing procedure, permanent mortality damage is reduced to minimum.
Description of drawings
Fig. 1 is the SEM figure of product active area damage under the existing method for supervising;
Fig. 2 is the SEM figure of the corresponding section of product active area damage under the existing method for supervising;
Fig. 3 is the flow chart of steps of the monitoring method of shallow trench isolation technology grinding technics provided by the invention;
Fig. 4 is the SEM figure that utilizes the active area damage of actual product after the monitoring method of shallow trench isolation technology grinding technics provided by the invention.
The specific embodiment
Below in conjunction with accompanying drawing and specific embodiment the monitoring method of the shallow trench isolation technology grinding technics of the present invention's proposition is done further explain.According to following explanation and claims, advantage of the present invention and characteristic will be clearer.What need explanation is, accompanying drawing all adopts the form of simplifying very much and all uses non-ratio accurately, only is used for conveniently, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is, a kind of monitoring method of shallow trench isolation technology grinding technics is provided, and this method adopts the monitoring silicon chip regularly to grind monitoring through at first before product grinds; Then the damage status with the similar zone of active area that is arranged in different gradients from said monitoring silicon chip is predicted the grinding influence that product possibly will receive; And, intervene artificially and timely align hone board, to guarantee to grind the accurate control of processing procedure according to above-mentioned prediction; Because the pattern that has the different Gradient distribution of a series of pattern densities on the said monitoring silicon chip provided by the invention; Its pattern density scope contains the situation of various normal product; Thereby can obtain and arrange each regional grinding rate drift situation of akin silicon chip of actual product figure, with the grinding influence of predicting that exactly product possibly will receive, so that timely adjusting process processing procedure; Guarantee the stability of processing procedure, permanent mortality damage is reduced to minimum.
Please refer to Fig. 3, Fig. 3 is the flow chart of steps of the monitoring method of shallow trench isolation technology grinding technics provided by the invention, and is as shown in Figure 3, and the monitoring method of shallow trench isolation technology grinding technics provided by the invention comprises the steps:
Step 1: before product grinds, adopt the monitoring silicon chip regularly to grind monitoring, wherein, and the pattern that has the different Gradient distribution of a series of pattern densities on the said monitoring silicon chip, its pattern density scope contains the situation of various normal product;
Step 2: the damage status with the similar zone of active area that is arranged in different gradients from said monitoring silicon chip is predicted the grinding influence that product possibly will receive;
Step 3:, intervene artificially and timely align hone board, to guarantee to grind the accurate control of processing procedure according to above-mentioned prediction.
Further; The method for designing of said monitoring silicon chip is: at first fill arrangement design through the redundant pattern of different gradients and go out a cover Lithographic template; Then on semi-conductor silicon chip, obtain the different Gradient distribution designed patterns of a series of pattern densities, thereby obtain said monitoring silicon chip.
Further, the similar zone of said and active area is active area redundant pattern zone.
Further, said grinding technics is a chemical mechanical milling tech.
Particularly; After the monitoring method through shallow trench isolation technology grinding technics provided by the invention; The active area degree of impairment of the follow-up actual product that obtains is as shown in Figure 4, has Fig. 4 to know, the active area of this actual product finishes not damage of back at shallow trench isolation technology grinding technics.
In sum, the invention provides a kind of monitoring method of shallow trench isolation technology grinding technics, this method adopts the monitoring silicon chip regularly to grind monitoring through at first before product grinds; Then the damage status with the similar zone of active area that is arranged in different gradients from said monitoring silicon chip is predicted the grinding influence that product possibly will receive; And, intervene artificially and timely align hone board, to guarantee to grind the accurate control of processing procedure according to above-mentioned prediction; Because the pattern that has the different Gradient distribution of a series of pattern densities on the said monitoring silicon chip provided by the invention; Its pattern density scope contains the situation of various normal product; Thereby can obtain and arrange each regional grinding rate drift situation of akin silicon chip of actual product figure, with the grinding influence of predicting that exactly product possibly will receive, so that timely adjusting process processing procedure; Guarantee the stability of processing procedure, permanent mortality damage is reduced to minimum.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (4)
1. the monitoring method of a shallow trench isolation technology grinding technics is characterized in that, this method comprises the steps:
Before product grinds, adopt the monitoring silicon chip regularly to grind monitoring, wherein, and the pattern that has the different Gradient distribution of a series of pattern densities on the said monitoring silicon chip, its pattern density scope contains the situation of various normal product;
The damage status with the similar zone of active area that is arranged in different gradients from said monitoring silicon chip is predicted the grinding influence that product possibly will receive;
According to above-mentioned prediction, intervene artificially and timely align hone board, to guarantee to grind the accurate control of processing procedure.
2. the monitoring method of shallow trench isolation technology grinding technics as claimed in claim 1; It is characterized in that; The method for designing of said monitoring silicon chip is: at first fill arrangement design through the redundant pattern of different gradients and go out a cover Lithographic template; Then on semi-conductor silicon chip, obtain the different Gradient distribution designed patterns of a series of pattern densities, thereby obtain said monitoring silicon chip.
3. the monitoring method of shallow trench isolation technology grinding technics as claimed in claim 2 is characterized in that, the similar zone of said and active area is active area redundant pattern zone.
4. the monitoring method of shallow trench isolation technology grinding technics as claimed in claim 1 is characterized in that, said grinding technics is a chemical mechanical milling tech.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105437095A (en) * | 2014-07-30 | 2016-03-30 | 宁波江丰电子材料股份有限公司 | Polishing device and method for groove bottom |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050208876A1 (en) * | 2004-03-19 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMP process control method |
| CN101192594A (en) * | 2006-11-28 | 2008-06-04 | 中芯国际集成电路制造(上海)有限公司 | Shallow ditch groove separation process monitoring domain and monitoring method |
| JP2008180712A (en) * | 2007-01-12 | 2008-08-07 | Tokyo Electron Ltd | Optical measurement and automatic process control using correlation between profile model and important profile shape |
| CN101934494A (en) * | 2009-07-03 | 2011-01-05 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding method |
| CN102152237A (en) * | 2010-02-11 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | Method and system for controlling manufacturing procedures of chemical mechanical polishing bench |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050208876A1 (en) * | 2004-03-19 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMP process control method |
| CN101192594A (en) * | 2006-11-28 | 2008-06-04 | 中芯国际集成电路制造(上海)有限公司 | Shallow ditch groove separation process monitoring domain and monitoring method |
| JP2008180712A (en) * | 2007-01-12 | 2008-08-07 | Tokyo Electron Ltd | Optical measurement and automatic process control using correlation between profile model and important profile shape |
| CN101934494A (en) * | 2009-07-03 | 2011-01-05 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding method |
| CN102152237A (en) * | 2010-02-11 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | Method and system for controlling manufacturing procedures of chemical mechanical polishing bench |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105437095A (en) * | 2014-07-30 | 2016-03-30 | 宁波江丰电子材料股份有限公司 | Polishing device and method for groove bottom |
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Application publication date: 20121128 |