CN102790139A - Method for manufacturing film gallium nitride (GaN) chip based on sapphire stripping - Google Patents
Method for manufacturing film gallium nitride (GaN) chip based on sapphire stripping Download PDFInfo
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- CN102790139A CN102790139A CN2011101324540A CN201110132454A CN102790139A CN 102790139 A CN102790139 A CN 102790139A CN 2011101324540 A CN2011101324540 A CN 2011101324540A CN 201110132454 A CN201110132454 A CN 201110132454A CN 102790139 A CN102790139 A CN 102790139A
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Abstract
The invention discloses a method for manufacturing a film gallium nitride (GaN) chip based on sapphire stripping, relates to a preparing technology of semiconductor luminescent devices, and solves the problem of epitaxial thin film rupture during a process of stripping a sapphire substrate. The method includes etching an epitaxial layer on the sapphire substrate, preparing a reflecting layer material on the etched epitaxial layer, performing alloying, bonding with a permanent support basal plate, curing the other side of the permanent support basal plate and a second basal plate through resins, stripping the sapphire substrate through lasers, removing the second basal plate and the resins after the stripping, or removing the second basal plate before the laser stripping. The method has the advantage that the rate of finished products of the GaN film chip can be improved.
Description
Technical field
The present invention relates to the preparation technology of light emitting semiconductor device.More specifically, the present invention relates to adopt the method for the GaN base film chip of laser lift-off preparation.
Background technology
Sapphire Substrate is as the epitaxially grown main substrate of GaN base LED, and its conductivity and thermal diffusivity are all poor.Because poorly conductive, luminescent device will adopt transversary, causes electric current to stop up and heating.And relatively poor heat dispersion has limited the efficient of luminescent device.After adopting laser lift-off technique that Sapphire Substrate is removed, light-emitting diode is made vertical stratification, can effectively solve heat radiation and go out optical issue.But utilize laser lift-off Sapphire Substrate rate of finished products low at present, this is the bottleneck of industrialization translate substrate type gallium nitride LED chip always.Because the stress that the difference of sapphire, gallium nitride film and support substrates three's thermal coefficient of expansion produces breaks gallium nitride film easily in the sapphire stripping process.Common way is to seek good support substrates and the corresponding bonding techniques of electrical and thermal conductivity that thermal coefficient of expansion is complementary.But because the out-of-flatness of bonded interface exists with very little space, the inhomogeneous sapphire that causes of the high energy impact of decomposition gas and gallium nitride decomposition energy is peeled off the power of pullling to gallium nitride film in stripping process, can cause the damage of gallium nitride film and breaks.Conventional method is that the epitaxial loayer on the sapphire is bonded directly on the conductive and heat-conductive substrate, makes device architecture after sapphire is peeled off, but the chip yield that obtains like this is very low.Common way fails to solve the stress in the stripping process, can cause a large amount of thin film chips to ftracture.
Summary of the invention
The technical problem that the present invention will solve provides a kind of manufacturing approach of gallium nitride chip, and this method can solve the problem that the epitaxial film that in peeling off the Sapphire Substrate process, causes breaks.
For addressing the above problem, the present invention proposes a kind of manufacturing approach of the film GaN chip of peeling off based on sapphire, and it may further comprise the steps:
Epitaxial loayer on the etching Sapphire Substrate;
On the epitaxial loayer of etching, prepare reflector material, and carry out alloy;
With permanent support substrate bonding;
Opposite side at the permanent support substrate adopts the resin and second substrate to be cured;
The laser lift-off Sapphire Substrate;
Peel off the back and remove second substrate and resin, second substrate also can remove before laser lift-off.
As preferred version of the present invention, said etching adopts ICP or RIE dry etching, and the degree of depth of wherein said etching is at least 1 micron, is preferably the 5-7 micron.
As preferred version of the present invention, wherein said reflector material comprises Ti, Ni, Al, Pt, Pd, Au, Cr, Ag, SiO
2, TiO
2, ITO, Al
2O
3, MgF
2Wherein one or more, preferred Ag, Al, SiO
2, reflector material thickness is the 500-4000 dust.
As preferred version of the present invention, wherein go back matcoveredn in the reflector material outside, protective layer material is by Ti, Ni, Al, Pt, Pd, Au, Cr, Ag, SiO
2, TiO
2, ITO, Al
2O
3, MgF
2One or more compositions wherein, preferred ITO, Ni,, Au,, Cr, Pt, protective layer material thickness is the 1000-10000 dust.
As preferred version of the present invention, wherein said and bonding permanent substrate comprise a kind of among Au-Au, Au-In, In-In, Ag-In, Ag-Sn, the In-Sn, preferred Au-Sn bonding.
As preferred version of the present invention, wherein glue is epoxide-resin glue or acrylic size, and its curing mode is that hot curing or UV solidify, and it solidifies back hardness is shore D 10-95, is preferably shore D 50-90.
As preferred version of the present invention, wherein the laser lift-off mode is for lining by line scan, and optical maser wavelength is 355nm.
As preferred version of the present invention, wherein the laser lift-off mode is that single die is peeled off, and optical maser wavelength is 248nm or 192nm.
As preferred version of the present invention; Wherein said second substrate is a temporary base; This temporary base, permanent support substrate are at least a can be in Si, pottery, W, Cu, Mo, GaAs, graphite, glass, sapphire, the organic material one or more, adopts wet etching, mechanical lapping or the method successively peeled off is removed temporary base.
As further preferred version of the present invention; Wherein said temporary base is Si; Adopt the method for wet etching to remove this temporary base, the corrosive liquid of wet etching can be one or more in sulfuric acid, hydrochloric acid, nitric acid, hydrofluoric acid, acetate, potassium hydroxide, hydrogen peroxide solution, ammoniacal liquor, bromine water, oxalic acid, potassium permanganate, KI, iodine, the ammonium iodide.
This beneficial effect of the invention: carry out permanent support substrate bonding earlier owing to adopt; Then the substrate of permanent bonding combines with temporary base through suitable binding material again; Adhesives has certain rigidity and intensity; Make in laser lift-off subsequently, the minimizing of tearing phenomenon occurs, the qualification rate of GaN thin film chip is improved for the GaN layer.
Description of drawings
Fig. 1 a-1h is for preparing the technical process of GaN base film chip with method of the present invention.
Embodiment
Further specify through accompanying drawing and embodiment below.
At first use MOCVD equipment growing n-type GaN layer, active layer, p type GaN layer on Sapphire Substrate 100, form epitaxial loayer 110, like Fig. 1 a.Epitaxial loayer is carried out etching, and etching depth is 5.5 microns, epitaxial loayer is carved opened, like Fig. 1 b.Deposited by electron beam evaporation complex reflex layer material 120 evaporates Ni layer and Ag layer respectively, and thickness is respectively 20 dusts and 1000 dusts, 420 ℃ of alloys 10 minutes, and deposited by electron beam evaporation Pt layer and Au layer again, thickness is respectively 5000 dusts and 5000 dusts, like Fig. 1 c.Silicon substrate (permanent support substrate) 140 and complex reflex material are carried out Au-Sn bonding 130, and temperature is 360 ℃, like Fig. 1 d.The another side of silicon substrate is coated viscose glue 150, be cured with interim silicon substrate (i.e. second substrate) 160, like Fig. 1 e.Carry out laser lift-off, peel off Sapphire Substrate 100,, it should be noted that also and can before laser lift-off, remove second substrate earlier like Fig. 1 f.Peel off the back and corrode interim silicon substrate and glue-line, like Fig. 1 g with nitric acid, sulfuric acid, hydrogen peroxide solution and hydrofluoric acid.Carry out alligatoring with common process for epitaxial surface, electron beam evaporation also prepares the aluminium electrode, obtains chip, like Fig. 1 h.
Claims (12)
1. the manufacturing approach of a film GaN chip of peeling off based on sapphire is characterized in that may further comprise the steps:
Epitaxial loayer on the etching Sapphire Substrate;
On the epitaxial loayer of etching, prepare reflector material, and carry out alloy;
With permanent support substrate bonding;
Opposite side at the permanent support substrate adopts the resin and second substrate to be cured;
The laser lift-off Sapphire Substrate;
Peel off the back and remove second substrate and resin.
2. the manufacturing approach of the film GaN chip of peeling off based on sapphire according to claim 1 is characterized in that: said etching adopts ICP or RIE dry etching, and etch thicknesses is for being at least 1 micron.
3. the manufacturing approach of the film GaN chip of peeling off based on sapphire according to claim 1, it is characterized in that: said reflector material comprises Ti, Ni, Al, Pt, Pd, Au, Cr, Ag, SiO
2, TiO
2, ITO, Al
2O
3, MgF
2In one or more.
4. the manufacturing approach of the film GaN chip of peeling off based on sapphire according to claim 3, it is characterized in that: said reflector material thickness is the 500-4000 dust.
5. the manufacturing approach of the film GaN chip of peeling off based on sapphire according to claim 1 is characterized in that: go back matcoveredn in said reflector material outside, protective layer material comprises Ti, Ni, Al, Pt, Pd, Au, Cr, Ag, SiO
2, TiO
2, ITO, Al
2O
3, MgF
2Wherein one or more.
6. the manufacturing approach of the film GaN chip of peeling off based on sapphire according to claim 5 is characterized in that: go back matcoveredn in said reflector material outside, its thickness of protective layer material is the 1000-10000 dust.
7. the manufacturing approach of the film GaN chip of peeling off based on sapphire according to claim 1 is characterized in that: said bonding adopts a kind of among Au-Au, Au-In, In-In, Ag-In, Ag-Sn or the In-Sn.
8. the manufacturing approach of the film GaN chip of peeling off based on sapphire according to claim 1; It is characterized in that: said resin can be epoxylite or acrylic resin; Curing mode is that hot curing or UV solidify, and it solidifies back hardness is shore D10-95.
9. the manufacturing approach of the film GaN chip of peeling off based on sapphire according to claim 1; It is characterized in that: said resin can be epoxylite or acrylic resin; Curing mode is that hot curing or UV solidify, and it solidifies back hardness is shore D50-90.
10. the manufacturing approach of the film GaN chip of peeling off based on sapphire according to claim 1 is characterized in that: saidly peel off that to adopt surface sweeping line by line, optical maser wavelength be 355nm.
11. the manufacturing approach of the film GaN chip of peeling off based on sapphire according to claim 1 is characterized in that: said peeling off adopts single die to peel off, and optical maser wavelength is 248nm or 192nm.
12. the manufacturing approach of the film GaN chip of peeling off based on sapphire according to claim 1; It is characterized in that: said second substrate adopts one or more in Si, pottery, W, Cu, Mo, GaAs, graphite, glass, sapphire, the organic material etc., this second substrate of method removal that adopts wet etching, mechanical lapping or successively peel off.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110132454.0A CN102790139B (en) | 2011-05-19 | Manufacture method based on the film GaN chip that sapphire is peeled off | |
| JP2014510643A JP5792375B2 (en) | 2011-05-19 | 2012-05-15 | Production method and manufacturing method of gallium nitride base film chip |
| PCT/CN2012/000664 WO2012155535A1 (en) | 2011-05-19 | 2012-05-15 | Method for manufacturing gallium nitride-based film chip |
| EP12786729.9A EP2711991A4 (en) | 2011-05-19 | 2012-05-15 | Method for manufacturing gallium nitride-based film chip |
| US14/083,487 US9224597B2 (en) | 2011-05-19 | 2013-11-19 | Method for manufacturing gallium nitride-based film chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110132454.0A CN102790139B (en) | 2011-05-19 | Manufacture method based on the film GaN chip that sapphire is peeled off |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102790139A true CN102790139A (en) | 2012-11-21 |
| CN102790139B CN102790139B (en) | 2016-12-14 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104008964A (en) * | 2013-02-20 | 2014-08-27 | 三星电子株式会社 | Method of grinding substrate and method of manufacturing semiconductor light emitting device using the same |
| CN104868020A (en) * | 2014-02-21 | 2015-08-26 | 山东浪潮华光光电子股份有限公司 | Method for recovering sapphire substrate |
| CN107910409A (en) * | 2017-11-13 | 2018-04-13 | 佛山市国星半导体技术有限公司 | A kind of GaN base LED chip of silicon substrate and preparation method thereof |
| CN113257971A (en) * | 2021-06-30 | 2021-08-13 | 南昌凯捷半导体科技有限公司 | Red light mini-LED chip and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20080035948A1 (en) * | 2006-03-09 | 2008-02-14 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode package |
| WO2009148253A2 (en) * | 2008-06-02 | 2009-12-10 | 고려대학교 산학협력단 | Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same |
| CN101840985A (en) * | 2010-05-04 | 2010-09-22 | 厦门市三安光电科技有限公司 | Gallium nitride based vertical light emitting diode with dual reflective layers and method for producing the same |
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080035948A1 (en) * | 2006-03-09 | 2008-02-14 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode package |
| WO2009148253A2 (en) * | 2008-06-02 | 2009-12-10 | 고려대학교 산학협력단 | Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same |
| CN101840985A (en) * | 2010-05-04 | 2010-09-22 | 厦门市三安光电科技有限公司 | Gallium nitride based vertical light emitting diode with dual reflective layers and method for producing the same |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104008964A (en) * | 2013-02-20 | 2014-08-27 | 三星电子株式会社 | Method of grinding substrate and method of manufacturing semiconductor light emitting device using the same |
| CN104008964B (en) * | 2013-02-20 | 2017-03-01 | 三星电子株式会社 | Grind the method for substrate and the method manufacturing light emitting semiconductor device using the method |
| CN104868020A (en) * | 2014-02-21 | 2015-08-26 | 山东浪潮华光光电子股份有限公司 | Method for recovering sapphire substrate |
| CN104868020B (en) * | 2014-02-21 | 2018-01-19 | 山东浪潮华光光电子股份有限公司 | A kind of method for reclaiming Sapphire Substrate |
| CN107910409A (en) * | 2017-11-13 | 2018-04-13 | 佛山市国星半导体技术有限公司 | A kind of GaN base LED chip of silicon substrate and preparation method thereof |
| CN113257971A (en) * | 2021-06-30 | 2021-08-13 | 南昌凯捷半导体科技有限公司 | Red light mini-LED chip and manufacturing method thereof |
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Address after: 4th Floor, Building 2, Huilongsen Science and Technology Park, No. 99 Kechuang 14th Street, Yizhuang Economic and Technological Development Zone, Beijing, 101111 Patentee after: SHINEON (BEIJING) TECHNOLOGY Co.,Ltd. Patentee after: Jingneng optoelectronics Co.,Ltd. Address before: 4th Floor, Building 2, Huilongsen Science and Technology Park, No. 99 Kechuang 14th Street, Yizhuang Economic and Technological Development Zone, Beijing, 101111 Patentee before: SHINEON (BEIJING) TECHNOLOGY Co.,Ltd. Patentee before: LATTICE POWER (JIANGXI) Corp. |