CN102789786B - Bi-layer structure material of CoPt/Ta vertical magnetic film and preparation method thereof - Google Patents
Bi-layer structure material of CoPt/Ta vertical magnetic film and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a bi-layer structure of a CoPt/Ta vertical magnetic film and a preparation method thereof. The material sequentially comprises a substrate, a CoPt magnetic layer and a Ta protective layer, wherein the thickness of the CoPt is 10nm-100nm, and the thickness of the Ta protective layer is 1nm-20nm. The Ta is used for the protective layer of the CoPt/Ta vertical magnetic film, and has the functions that in sputtering deposition and annealing, the Ta element is diffused towards the CoPt layer and is segregated to a CoPt crystal boundary, so that a crystal boundary area becomes a non magnetic area, a CoPt magnetization reversal mechanism is changed, and the coercivity of a film medium is improved; and 2, in a heat treatment process, a Ta atom is diffused towards the CoPt magnetic layer to weaken the exchange-coupling interaction between adjacent magnetic particles, reduce the overturning noise of the medium and increase the recording bit density.
Description
Technical field
The invention belongs to area information storage, be specifically related to a kind ofly can be used for CoPt/Ta double-decker material improving CoPt costal fold straight magnetic property and preparation method thereof.
Background technology
In the external memory storage of computing machine, magnetic storage technical development is rapid, and defines huge industry.The storage density of magnetic storage medium develops rapidly with the speed increasing by 10 times for every 5 years in recent years.Along with the further raising of magnetic recording density, the size of record cell reduces, thus the magnetic crystal grain size in unit record unit reduces rapidly, horizontal magnetic recording (direction of magnetization is parallel with the traffic direction of recording medium) runs into the restriction of superparamagnetic e ffect.Superparamagnetic e ffect can cause recorded information under the impact of outside thermal perturbations, become unstable, even loses, thus limits the raising of medium recording density.In order to improve storage density further, perpendicular magnetic recording technol (direction of magnetization of recorded bit is vertical with the surface of recording medium) obtains extensive concern.The thought of perpendicular recording proposes in doctor Iwasaki by Japan in 1975 first time.In perpendicular recording medium, the direction of easy axis of magnetic-particle is perpendicular to recording medium film surface.
Perpendicular Recording has following 2 advantages compared to horizontal recording technology:
First, perpendicular recording uses single-pole-piece magnetic head to coordinate with soft magnetic underlayer and read and write.Compared with the ring-type magnetic head used with horizontal recording, Perpendicular Recording can be read and write on double coercitive recording medium.This makes the material that can adopt higher magnetocrystalline anisotropy in perpendicular recording medium.Under identical signal to noise ratio (S/N ratio) (Signal to Noise Ratio, SNR) and thermal stability situation, the volume of the magnetic-particle in recording medium can be less, and thus, perpendicular magnetic recording medium can support higher recording density.
Secondly, the magnetic-particle in perpendicular recording has the strong uniaxial anisotropy perpendicular to film surface.This makes the upset field distribution of magnetic-particle less, narrower between the zone of transition between record cell.Be conducive between narrower zone of transition improving signal to noise ratio (S/N ratio), be conducive to the further raising of recording density.
The first commercial hard disk model based on Perpendicular Recording is made in 2006 by Seagate Technology of the U.S. in the world.2007, it was 520G/in that US West's data company reports based on CoCrPt recording medium, density
2demiware, Wood etc. analog result display perpendicular recording can support more than 1T/in
2recording density.
In perpendicular magnetic recording hard disk, along with the further raising of recording density, when magnetic recording position and particle size thereof are reduced to a certain degree, the information of storage will become unstable due to superparamagnetic e ffect.In order to make the magnetic moment of most magnetic-particle in recorded bit keep its direction of magnetization within the sufficiently long time, the anisotropy energy of magnetic recording media is sufficiently high.Under normal temperature condition, want more than stable recording information to 10 year, thermal stability factor (the Thermal Stability Factor=K of recording medium
uv/k
bt) 60 must be greater than.Meet high s/n ratio and these two requirements of vying each other of thermal stability are the keys improving hard disk magnetic recording density further simultaneously.
Perpendicular magnetic recording materials, because having good thermal stability and higher recording density, provides advantage for realizing Ultrahigh-Density Data Storage.Perpendicular magnetic recording requires as far as possible little in thermally-stabilised prerequisite magnetic particle size, in order to improve thermal stability, must adopt and have higher magnetic anisotropy energy (K
u) material as magnetic recording media.There is L1
0the CoPt such as atomic ratio such as grade of structure is a kind of positive Tetragonal in order, and be alternately arranged along c-axis direction Co and Pt atomic layer, c-axis is slightly shorter than a axle, and c-axis is direction of easy axis, and this tetragonal along c-axis compression deformation makes CoPt alloy have up to (10
6-10
7j/m
3) perpendicular magnetic anisotropic can and high-coercive force and good corrosion resistance, effectively can improve the thermal stability of bit, reduce media noise, and can magnetic recording density be increased substantially, thus in ultra-high recording density magnetic recording media, have very large application potential, be well suited for as super-high density vertical magnetic recording material.
In the industrial applicability of high density perpendicular recording medium, exist to obtain L1
0phase, needs the substrate temperature of more than 300 DEG C or the heat treatment temperature of more than 500 DEG C.High temperature can make particle size be difficult to control, and also can extend the production cycle of product, the final problem increasing industrial cost.At present, researchers are devoted to select suitable bottom (as Ag, C, BN), and the magnetocrystalline particle of induction CoPt alloy firm is to (001) vertical orientated growth.Or by mixing the third non-magnetic impurity (as Ag, Si
3n
4, Al
2o
3, SiO
2, B
2o
3, BN, TiO
2, B), not only reduce annealing temperature, greatly can also weaken intercrystalline magnetic exchange coupling effect.
Summary of the invention
The present invention is directed to run in production technology high annealing temperature, affected by external environment, easily oxidized, burn into magnetic-particle is difficult to L1
0(001) problem of vertical orientated growth, provides double-decker material of a kind of CoPt/Ta vertical magnetized film and preparation method thereof.The present invention does not adopt primer and material doped method, but on CoPt film deposited protective layer material Ta, to solve CoPt thin magnetic film easily oxidized and problem that magnetic anisotropy that is that cause can reduce in preparation production process, and promote L1
0(001) vertical orientated growth.
The double-decker material of a kind of CoPt/Ta vertical magnetized film provided by the invention, it comprises substrate successively, CoPt magnetosphere, Ta protective seam, and wherein, the thickness of CoPt is the thickness of 10nm ~ 100nm, Ta protective seam is 1nm ~ 20nm.
The double-decker material of described CoPt/Ta vertical magnetized film has two kinds of preparation methods, CoPt composition target method and CoPt alloys target method.
The step of CoPt composition target method comprises:
1st step prepares Co metallic target and Ta metallic target;
2nd step posts Pt sheet on Co target;
3rd step is with Ar
2as sputter gas, first the Co target after posting Pt sheet is sputtered, then on CoPt, sputter one deck Ta layer, prepare the CoPt magnetic membrane material with Ta protective seam;
The CoPt single layer magnetic film prepared and CoPt/Ta double-decker thin magnetic film are positioned in vacuum annealing furnace and anneal under high temperature by the 4th step.
The step of CoPt alloys target method comprises:
1st step prepares CoPt alloys target and Ta metallic target;
2nd step is with Ar
2as sputter gas, first CoPt alloys target is sputtered, then on CoPt, Ta target is sputtered, prepare the CoPt magnetic membrane material with Ta protective seam;
The CoPt/Ta double-decker thin magnetic film prepared is positioned in vacuum annealing furnace and anneals under high temperature by the 3rd step.
Technique effect of the present invention is embodied in: compared with the CoPt material not adding Ta protective seam, and the magnetic material of CoPt/Ta structure provided by the invention, has high magnetocrystalline anisotropy and large perpendicular coercive force.The temperature controlling annealing, at 650 DEG C, namely can promote that the magnetic-particle of CoPt grows along c magnetized axis direction.The present invention considers that Ta has very outstanding chemical property and high corrosion resistivity, and the oxidation that can run in sputtering, annealing, test process magnetic material and corrosion play a very good protection.At preparation CoPt magnetic material, then add Ta protective seam above after, CoPt/Ta is relative to the CoPt not adding protective seam, and magnetic property improves a lot.Main cause has: 1. Ta nonmagnetic elements is in sputter deposition process, to Grain Boundary Segregation, makes crystal boundary area become non-magnetic region, thus changes magnetization inversion mechanism, improves thin film dielectrics coercive force.2. under suitable annealing temperature, due to thermal diffusion effect, Ta atom, to the diffusion of CoPt magnetosphere, reduces the intergranular exchange-coupling interaction of adjacent magnetic, reduces the noise of media turnover, improves the raising of recorded bit density.
Accompanying drawing explanation
Fig. 1 is the film layer structure schematic diagram of CoPt/Ta vertical magnetized film.
Fig. 2 is the vertical magnetic hysteresis loop of CoPt film.
Fig. 3 is the means of differential scanning calorimetry figure of CoPt vertical magnetized film.
Fig. 4 is the magnetic hysteresis loop that the CoPt film of different-thickness adds the Ta protective seam of 1nm.
Fig. 5 is the magnetic hysteresis loop that the CoPt film of different-thickness adds the Ta protective seam of 10nm.
Fig. 6 is the magnetic hysteresis loop that the CoPt film of different-thickness adds the Ta protective seam of 20nm.
Fig. 7 is the magnetic hysteresis loop of the CoPt film not adding Ta protective seam and added Ta protective seam.
Fig. 8 is the XRD figure of the CoPt film not adding Ta protective seam and added Ta protective seam.
Fig. 9 is the XPS photoelectron spectrum line chart of the Co atom of the CoPt film not adding Ta protective seam and added Ta protective seam.
Figure 10 is that CoPt/Ta film is annealed the magnetic hysteresis loop of different time at 650 DEG C.
Figure 11 CoPt/Ta film is annealed the 3 d surface topography figure measured by 10min at 650 DEG C.
Figure 12 CoPt/Ta film is annealed the 3 d surface topography figure measured by 30min at 650 DEG C.
Figure 13 CoPt/Ta film is annealed the 3 d surface topography figure measured by 1h at 650 DEG C.
Embodiment
In further detail the present invention is described below by by embodiment, but following examples are only illustrative, protection scope of the present invention is not by the restriction of these embodiments.
A kind of double-deck magnetic material of CoPt/Ta using Ta as protective seam described in the present embodiment; as shown in Figure 1; it comprises substrate 3 successively; CoPt magnetosphere 2; Ta protective seam 1; wherein, the thickness of CoPt is 10nm ~ 100nm (preferred value is 50nm), and the thickness of Ta protective seam is 1nm ~ 20nm (preferred value is 10nm).
The double-deck magnetic material of CoPt/Ta using Ta as protective seam provided by the invention, has high magnetocrystalline anisotropy energy and large magnetic coercive force.In sputter deposition process, Ta to CoPt and Ta Grain Boundary Segregation, makes crystal boundary area become non-magnetic region as nonmagnetic elements, thus changes magnetization inversion mechanism, improves thin film dielectrics coercive force.And under heat treatment process, due to thermal diffusion effect, Ta atom, to the diffusion of CoPt magnetosphere, reduces the intergranular exchange-coupling interaction of adjacent magnetic, reduces the noise of medium, improves recorded bit density.
The double-decker material of described CoPt/Ta vertical magnetized film can adopt CoPt composition target method and CoPt alloys target method to be prepared, and also can adopt any one preparation method in the methods such as sputtering method, chemical vapour deposition technique, evaporation method, atomic layer deposition method, metallo-organic decomposition process or Laser deposition method.
In preparation method provided by the invention, following preferred technological parameter can be adopted:
Sputtering Co target and CoPt alloys target power are 15W ~ 200W (further preferred value is 20W), and sputtering Ar air pressure is 0.45Pa ~ 1.0Pa (further preferred value is 0.5Pa).
Sputtering Ta target power output is 15W ~ 200W (further preferred value is 25W), and sputtering Ar air pressure is 0.45Pa ~ 1.0Pa (further preferred value is 0.5Pa).
Annealing temperature is 600 DEG C ~ 850 DEG C, and further, the annealing time of CoPt/Ta and CoPt is 10min ~ 1h.
CoPt/Ta structure of the present invention and use Ta can adopt any one preparation method in the methods such as sputtering method, chemical vapour deposition technique, evaporation method, atomic layer deposition method, metallo-organic decomposition process or Laser deposition method as the preparation method of CoPt protective seam.
Embodiment 1
Embodiment selects magnetically controlled sputter method to prepare CoPt/Ta and CoPt thin magnetic film herein.
Substrate adopts Si (100), and prepare the CoPt alloy target material (atomic ratio Co: Pt=1: 1) that diameter is 100mm, thickness is 5mm, the purity of target is 99.999% (atomic percent).By the method for magnetron sputtering, during sputtering, pass into the Ar gas that purity is 99.999%.
Concrete technological parameter is as follows: CoPt alloys target adopts DC power power supply, and sputtering power is 120W; Sputtering Ar air pressure is 1Pa; Before each sputtering, pre-sputtering 1 hour is to ensure that the oxide layer on CoPt alloys target surface is removed clean.The thickness of film is measured, the CoPt thin magnetic film of preparation 50nm by step instrument.VSM is utilized to test the vertical magnetic characteristic of CoPt (50nm) film.The perpendicular magnetization curve of the CoPt shown in Fig. 2 can be found out, the perpendicular coercive force of CoPt film is 2544.6Oe.CoPt film is tending towards to L1 at the magnetic crystal grain of anneal under the sputtering power and annealing temperature of optimization 1h, CoPt
0(001) direction growth.
Embodiment 2
The phase transition temperature of CoPt film is investigated.
Substrate adopts Si (100), prepare the Co target that diameter is 100mm, thickness is 5mm, the purity of target is 99.999% (atomic percent), size is that the Pt sheet of 2*10mm is attached on Co target equably, regulates the atomic ratio of Co and Pt to be 1: 1 by the quantity changing Pt sheet.Then use the method for magnetron sputtering, during sputtering, pass into the Ar gas that purity is 99.999%.
Concrete technological parameter is as follows: Co target adopts DC power power supply, and sputtering power is 20W; Sputtering Ar air pressure is 0.5Pa; Before each sputtering, pre-sputtering 1 hour is to ensure that the oxide layer on Co target surface is removed clean.Each change Pt sheet quantity be attached on Co target just can obtain the CoPt thin magnetic film of different atomic ratio.By with the subsidiary energy spectrometer analysis of scanning electron microscope, the atomic percent shared by each element in film can be obtained.Last test found that subsides 8 Pt sheets can reach the ratio of Co: Pt=1: 1 on Co target.Obtained the thickness of film by step instrument analysis, prepare 10nm respectively, the CoPt thin magnetic film of 50nm, 100nm.
Carry out differential thermal analysis (DTA) with DSC (differential scanning calorimeter), obtain result as Fig. 3.In the exothermic peak of 560 DEG C of place's appearance CoPt, illustrate that CoPt there occurs a phase in version at 560 DEG C of places.Therefore only having annealing temperature higher than 560 DEG C, just can there is phase in version in CoPt.The CoPt alloy firm of sputtering state is fcc structure, and only under high temperature annealing condition, film phase in version could occur.But along with the rising of annealing temperature, the size of CoPt crystal grain can constantly be grown up, and too growing up of crystal grain causes magnetic exchange coupling effect, thus affects the magnetic property of CoPt medium and the magnetic property of noise.Therefore determine that the phase transition temperature of CoPt can be optimized annealing process, prevent the overgrowth of CoPt crystal grain.CoPt film is placed in high-temperature annealing furnace, arrange annealing temperature to be 600 DEG C ~ 850 DEG C and phase in version can to occur, but when annealing temperature is 650 DEG C, can ensure that the particle in film all phase in version occurs, can ensure that again magnetocrystalline particle is grown up not too much, cause intercrystalline magnetocrystalline coupling to cause the magnetic property of CoPt film to reduce.
Embodiment 3
Preparing diameter is 100mm, and thickness is the Ta target of 5mm, and the purity of target is 99.99% (atomic percent), then uses the method for magnetron sputtering, passes into the Ar gas that purity is 99.999% during sputtering.Sample 10nm in embodiment one, 50nm, 100nmCoPt magnetosphere plates respectively one deck Ta film, and the thickness of Ta film is 1nm, 10nm, 20nm.
Concrete technological parameter is as follows: Ta target adopts DC power power supply, and sputtering power is 25W, and sputtering Ar air pressure is 0.5Pa; Before each sputtering, pre-sputtering 1 hour is to ensure that the oxide layer on Ta target surface is removed clean.
Test 10nm respectively with VSM, 50nm, 100nmCoPt film plates 1nm respectively, the vertical magnetism energy of the Ta protective seam of 10nm, 20nm.10nm, 50nm, 100nmCoPt film adds the contrast magnetic hysteresis loop of 1nmTa protective seam as shown in Figure 4.The M-H perpendicular magnetization curve of the CoPt film sample of three different-thickness of the Ta protective seam of additional 10nm as shown in Figure 5.The CoPt sample of three thickness adds the contrast magnetic hysteresis loop of the Ta protective seam of 20nm as shown in Figure 6.Can find out from the contrast perpendicular magnetization curve of Fig. 4, Fig. 5, Fig. 6, when the thickness that the thickness of CoPt film is 50nm, Ta protective seam is 10nm, the perpendicular coercive force surveyed is maximum, and its value is 1289.4Oe.
(two samples are all 1 × 10 in vacuum tightness to survey CoPt film and CoPt (50nm)/Ta (10nm) respectively with VSM, XRD and XPS
-4annealing furnace in annealing temperature be the 1h that anneals at 650 DEG C) double-decker thin magnetic film vertical magnetism energy, crystallization degree and become key situation.The magnetic hysteresis loop of measurement two samples, crystallization peak, Cheng Jianfeng are shown in Fig. 7, Fig. 8, Fig. 9.As can see from Figure 7, the saturation magnetization of two samples is more or less the same, and is all 600emu/cm
3left and right, the vertical magnetic coercive force of CoPt magnetized film not adding Ta protective seam only has 110.5Oe, and the vertical magnetic coercive force of CoPt magnetized film having added Ta protective seam is up to 1289.4Oe.The crystallization degree of CoPt film and CoPt (50nm)/Ta (10nm) magnetic film is compared in Fig. 8, after CoPt Thin-film anneal time enough, (111), (200), (002) Bragg diffraction peak are there is, and CoPt (50nm)/Ta (10nm) film is except appearance above 3 basic peaks, L1
0(001) peak has also occurred.By Scherrer (scherrer) formula
D＝Kλ/Bcos(θ)
(wherein K is Scherrer constant, and when B is the halfwidth of diffraction peak, it is Bragg diffraction angle that K gets 0.9, θ, and λ is the X-ray wavelength used), calculates the L1 of formation
0(001) crystallite dimension (D)=42nm.
Fig. 9 is the photoelectron spectroscopy figure in the Co atom 2p region of two samples.The combination of the Photoelectron peak performance in Co2p region can be the bimodal of 780.5ev and 796.9ev respectively.Bimodal appearance comes from the 2p energy level track spin-spin splitting of Co atom, and corresponds respectively to Co2p1/2, Co2p3/2, and photoelectron peak-to-peak type is that Doniach-Sunjic is asymmetric.For CoPt/Ta, the height in 2p region combines can hold 780.5ev place substantially to present the peak of symmetric form, combine 5.3ev place appearance one can take satellite peak (shake-up satellite) at distance Co2p1/2 peak height, the appearance of satellite peak comes from O2p Energy band electron and unoccupied orbital transition can be with to cause to Co2p.
The comparative analysis of Fig. 7, Fig. 8, Fig. 9 illustrates, after 650 DEG C of annealing 1h, and L1 in CoPt/Ta film
0(001) crystal grain in direction occurs, in Ta cap, the diffusion of Ta atom magnetropism layer effectively facilitates CoPt magnetic-particle and grows to c easy magnetizing axis.And the Ta cap in CoPt/Ta film has contained that O atoms permeating in annealing process is to the adverse effect of CoPt magnetosphere to its magnetic property effectively.In the thermal annealing of 650 DEG C, Ta atoms permeating is in CoPt layer, effectively isolated the intergranular interaction of CoPt, reducing CoPt magnetic particle due to the excessive grain that high annealing causes grows up and the exchange-coupling interaction formed, thus the magnetic anisotropy of the CoPt film improved greatly.
Embodiment 4
Sample CoPt (50nm) in embodiment 3/Ta (10nm) is annealed respectively 10min, 30min, 1h at 650 DEG C, carries out magnetic characteristic analysis and atomic force microscope test.Test the perpendicular coercive force of the film under different annealing temperature and observe surface topography and chart surface roughness.As shown in Figure 10, CoPt (50nm)/Ta (10nm) anneals the M-H ⊥ magnetic hysteresis loop of 10min, 30min, 1h at 650 DEG C.The perpendicular coercive force of annealing 10min only has 949.7Oe, the perpendicular coercive force 737.7Oe of annealing 30min, and the coercive force of annealing 1h is 1289.4Oe.Figure 11, Figure 12, Figure 13 is that CoPt (50nm)/Ta (10nm) anneals respectively 10min at 650 DEG C, 30min, atomic force microscope (AFM) the three-dimensional appearance figure of 1h, reflects the surface smoothness of film very intuitively, the surface particles comparatively dense of film sample from figure, concavo-convex fluctuation is less, and particle arrangement is more neat.As can be seen from these three 3D figure, along with the lengthening of annealing time, crystal grain is constantly being grown up.From the result of Roughness analysis, the surfaceness reading CoPt (50nm)/Ta (10nm) film of the 10min that anneals at 650 DEG C is 1.705nm, the roughness of film of annealing 30min is 3.181nm, and the surfaceness of annealing 1h is 5.627nm (wherein the roughness of silicon chip surface not deduction).The surfaceness of annealing 1h is more much bigger than the surfaceness of annealing 10min, and show the continuous lengthening along with annealing time, the crystal grain of film is in lasting increase.Meanwhile, the coercive force of annealing 1h is also more much bigger than the coercive force of the vertical face of annealing 10min, although illustrate that CoPt film is led crystallinity and strengthened, cause crystal grain growing up always, orientation strengthens, magnetic moment orientation reaches unanimity, but the size of CoPt crystal grain does not reach the size of magnetic single domain.
The above is preferred embodiment of the present invention, but the present invention should not be confined to the content disclosed in this embodiment and accompanying drawing.The equivalence completed under not departing from spirit disclosed in this invention so every or amendment, all fall into the scope of protection of the invention.
Claims (4)
1. the double-decker material of a CoPt/Ta vertical magnetized film; it is made up of substrate stacked successively, CoPt magnetosphere and Ta protective seam; wherein; the thickness of CoPt is 10nm ~ 100nm; the thickness of Ta protective seam is 1nm ~ 20nm; described Ta protective seam deposits to obtain on CoPt magnetosphere, the two directly contact preparing easily oxidized in production process and magnetic anisotropy that is that cause can reduce problem to solve CoPt magnetosphere, and promote L1
0(001) vertical orientated growth.
2. the double-decker material of CoPt/Ta vertical magnetized film according to claim 1, is characterized in that, the thickness of CoPt is the thickness of 50nm, Ta protective seam is 10nm.
3. a preparation method for the double-decker material of CoPt/Ta vertical magnetized film according to claim 1, its step comprises:
1st step prepares CoPt layer;
2nd step is with Ar
2as sputter gas, CoPt layer sputters one deck Ta layer, prepare the CoPt magnetic membrane material with Ta protective seam; In sputter deposition process, Ta to CoPt and Ta Grain Boundary Segregation, makes crystal boundary area become non-magnetic region as nonmagnetic elements, thus changes magnetization inversion mechanism, improves thin film dielectrics coercive force;
The CoPt/Ta double-decker thin magnetic film prepared is positioned in vacuum annealing furnace and anneals under high temperature by the 3rd step, and annealing temperature is 600 DEG C ~ 850 DEG C, and the annealing time of Ta and CoPt is 10min ~ 1h; In heat treatment process, due to thermal diffusion effect, Ta atom, to the diffusion of CoPt magnetosphere, to weaken the intergranular exchange-coupling interaction of adjacent magnetic, reduces the noise of medium, and improves recorded bit density.
4. preparation method according to claim 3, is characterized in that, in the 3rd step, annealing temperature is 650 DEG C, promotes that the magnetic-particle of CoPt grows along c magnetized axis direction.
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| CN1822110A (en) * | 2005-02-03 | 2006-08-23 | 株式会社东芝 | Magnetic recording apparatus |
| CN101038754A (en) * | 2006-09-14 | 2007-09-19 | 山西师范大学 | Super-high density vertical magnetic recording medium and method for making same |
| CN102280574A (en) * | 2011-01-07 | 2011-12-14 | 江苏多维科技有限公司 | Thin film magnetoresistance sensing element, combination of multiple sensing elements, and electronic device coupled with combination |
| CN102376873A (en) * | 2010-08-19 | 2012-03-14 | 索尼公司 | Magnetic memory element |
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|---|---|---|---|---|
| CN1822110A (en) * | 2005-02-03 | 2006-08-23 | 株式会社东芝 | Magnetic recording apparatus |
| CN101038754A (en) * | 2006-09-14 | 2007-09-19 | 山西师范大学 | Super-high density vertical magnetic recording medium and method for making same |
| CN102376873A (en) * | 2010-08-19 | 2012-03-14 | 索尼公司 | Magnetic memory element |
| CN102280574A (en) * | 2011-01-07 | 2011-12-14 | 江苏多维科技有限公司 | Thin film magnetoresistance sensing element, combination of multiple sensing elements, and electronic device coupled with combination |
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