CN102789786B - Bi-layer structure material of CoPt/Ta vertical magnetic film and preparation method thereof - Google Patents

Bi-layer structure material of CoPt/Ta vertical magnetic film and preparation method thereof Download PDF

Info

Publication number
CN102789786B
CN102789786B CN201210245272.9A CN201210245272A CN102789786B CN 102789786 B CN102789786 B CN 102789786B CN 201210245272 A CN201210245272 A CN 201210245272A CN 102789786 B CN102789786 B CN 102789786B
Authority
CN
China
Prior art keywords
copt
layer
magnetic
film
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210245272.9A
Other languages
Chinese (zh)
Other versions
CN102789786A (en
Inventor
程晓敏
刘临利
缪向水
刘辉
洪玮
关夏威
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huazhong University of Science and Technology
Original Assignee
Huazhong University of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huazhong University of Science and Technology filed Critical Huazhong University of Science and Technology
Priority to CN201210245272.9A priority Critical patent/CN102789786B/en
Publication of CN102789786A publication Critical patent/CN102789786A/en
Application granted granted Critical
Publication of CN102789786B publication Critical patent/CN102789786B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明公开了一种CoPt/Ta垂直磁化膜的双层结构及其制备方法。材料依次包括基片,CoPt磁性层,Ta保护层,其中,CoPt的厚度为10nm~100nm,Ta保护层的厚度为1nm~20nm。Ta用于CoPt垂直磁化膜的保护层,作用在于:①Ta元素在溅射沉积及退火中,向CoPt层扩散并向CoPt晶界偏聚,使晶界区成为非磁性区域,改变CoPt磁化反转机制,提高薄膜介质矫顽力。②在热处理过程中,Ta原子向CoPt磁性层扩散,减弱了相邻磁性颗粒间的交换耦合作用,减小介质翻转的噪声,提高了记录位密度。

The invention discloses a double-layer structure of a CoPt/Ta perpendicular magnetization film and a preparation method thereof. The material sequentially includes a substrate, a CoPt magnetic layer, and a Ta protective layer, wherein the thickness of the CoPt is 10nm-100nm, and the thickness of the Ta protective layer is 1nm-20nm. Ta is used in the protective layer of the CoPt perpendicular magnetization film, and its function is as follows: ① During sputtering deposition and annealing, Ta element diffuses to the CoPt layer and segregates to the CoPt grain boundary, making the grain boundary area a non-magnetic area and changing the CoPt magnetization reversal mechanism to increase the coercive force of thin film media. ②During the heat treatment process, Ta atoms diffuse to the CoPt magnetic layer, which weakens the exchange coupling between adjacent magnetic particles, reduces the noise of medium inversion, and improves the recording bit density.

Description

CoPt/Ta垂直磁化膜的双层结构材料及其制备方法CoPt/Ta double-layer structure material and preparation method of perpendicular magnetization film

技术领域 technical field

本发明属于信息存储领域,具体涉及一种可用于提高CoPt膜垂直磁性能的CoPt/Ta双层结构材料及其制备方法。The invention belongs to the field of information storage, and in particular relates to a CoPt/Ta double-layer structure material which can be used to improve the vertical magnetic properties of CoPt films and a preparation method thereof.

背景技术 Background technique

在计算机的外部存储器中,磁存储技术发展迅速,并形成了巨大的产业。近年来磁存储介质的存储密度以每5年增加10倍的速度迅速发展。随着磁记录密度的进一步提高,记录单元的尺寸减小,从而单位记录单元内的磁性晶粒尺寸迅速减小,水平磁记录(磁化方向与记录介质的运行方向平行)遇到超顺磁效应的限制。超顺磁效应会导致记录信息在外界热扰动的影响下变得不稳定,甚至丢失,从而限制了介质记录密度的提高。为了进一步提高存储密度,垂直磁记录技术(记录位的磁化方向与记录介质的表面垂直)获得广泛关注。垂直记录的思想于1975年由日本的Iwasaki博士第一次提出。在垂直记录介质中,磁性颗粒的易磁化方向垂直于记录介质薄膜表面。In the external memory of the computer, the magnetic storage technology develops rapidly and forms a huge industry. In recent years, the storage density of magnetic storage media has developed rapidly at a rate of 10 times every 5 years. With the further increase of the magnetic recording density, the size of the recording unit decreases, so that the size of the magnetic grains in the unit recording unit decreases rapidly, and the horizontal magnetic recording (the magnetization direction is parallel to the running direction of the recording medium) encounters the superparamagnetic effect limits. The superparamagnetic effect will cause the recorded information to become unstable or even lost under the influence of external thermal disturbance, thus limiting the increase of the recording density of the medium. In order to further increase the storage density, perpendicular magnetic recording technology (the magnetization direction of the recording bit is perpendicular to the surface of the recording medium) has attracted widespread attention. The idea of vertical recording was first proposed by Dr. Iwasaki of Japan in 1975. In perpendicular recording media, the direction of easy magnetization of magnetic particles is perpendicular to the surface of the recording medium film.

垂直记录技术相比于水平记录技术具有以下两点优势:Compared with horizontal recording technology, vertical recording technology has the following two advantages:

首先,垂直记录使用单极磁头与软磁底层配合进行读写。与水平记录使用的环状磁头相比,垂直记录技术可以在双倍矫顽力的记录介质上进行读写。这使得在垂直记录介质中可以采用更高磁晶各向异性的材料。在相同信噪比(Signal to Noise Ratio,SNR)和热稳定性情况下,记录介质中的磁性颗粒的体积可以更小,因而,垂直磁记录介质可以支持更高的记录密度。First, perpendicular recording uses a unipolar head with a soft magnetic underlayer for reading and writing. Compared with the annular magnetic head used in horizontal recording, vertical recording technology can read and write on the recording medium with double the coercive force. This enables the use of higher magnetocrystalline anisotropy materials in perpendicular recording media. Under the same signal-to-noise ratio (SNR) and thermal stability, the volume of magnetic particles in the recording medium can be smaller, so the perpendicular magnetic recording medium can support higher recording density.

其次,垂直记录中的磁性颗粒具有垂直于薄膜表面的强单轴各向异性。这使得磁性颗粒的翻转场分布更小,记录单元之间的过渡区间更窄。更窄的过渡区间有利于提高信噪比,有利于记录密度的进一步提高。Second, the magnetic particles in perpendicular recording have strong uniaxial anisotropy perpendicular to the film surface. This makes the switching field distribution of the magnetic grains smaller and the transition interval between recording units narrower. A narrower transition interval is conducive to improving the signal-to-noise ratio and further improving the recording density.

世界上首个基于垂直记录技术的商用硬盘模型由美国希捷公司于2006年做出。2007年,美国西部数据公司报道了基于CoCrPt记录介质、密度为520G/in2的演示产品,Wood等的模拟结果显示垂直记录可以支持超过1T/in2的记录密度。The world's first commercial hard disk model based on perpendicular recording technology was made by Seagate Corporation of the United States in 2006. In 2007, Western Digital Corporation of the United States reported a demonstration product based on CoCrPt recording medium with a density of 520G/in 2 . The simulation results of Wood et al. showed that vertical recording can support a recording density exceeding 1T/in 2 .

在垂直磁记录硬盘中,随着记录密度的进一步提高,当磁记录位及其颗粒尺寸减小到一定程度时,存储的信息仍将由于超顺磁效应而变得不稳定。为了使得记录位内多数磁性颗粒的磁矩在足够长的时间内保持其磁化方向,磁记录介质的各向异性能必须足够高。在常温条件下,要想稳定记录信息至10年以上,记录介质的热稳定性因子(Thermal Stability Factor=KuV/kBT)必须要大于60。同时满足高信噪比和热稳定性这两个相互竞争的要求是进一步提高硬盘磁记录密度的关键。In the perpendicular magnetic recording hard disk, with the further increase of the recording density, when the magnetic recording bit and its particle size are reduced to a certain extent, the stored information will still become unstable due to the superparamagnetic effect. The anisotropy of the magnetic recording medium must be sufficiently high in order for the magnetic moments of the majority of magnetic grains in the recording bit to maintain their magnetization directions for a sufficiently long period of time. Under normal temperature conditions, in order to stably record information for more than 10 years, the thermal stability factor (Thermal Stability Factor=K u V/k BT ) of the recording medium must be greater than 60. Simultaneously meeting the two competing requirements of high signal-to-noise ratio and thermal stability is the key to further improve the magnetic recording density of hard disks.

垂直磁记录材料因有较好的热稳定性及较高的记录密度,为实现超高密度信息存储提供了有利条件。垂直磁记录要求在热稳定前提下磁性颗粒尺寸尽量小,为了提高热稳定性,必须采用具有较高磁各向异性能(Ku)的材料作为磁记录介质。具有L10结构的等原子比CoPt是一种有序的正四方相,沿c轴方向Co和Pt原子层交替排列,c轴比a轴略短,c轴为易磁化方向,这种沿c轴压缩变形的四方结构使CoPt合金具有高达(106-107J/m3)的垂直磁各向异性能和高矫顽力和较好的抗腐蚀性能,可以有效提高比特位的热稳定性,降低介质噪声,并且可以大幅度提高磁记录密度,因而在超高记录密度磁记录介质方面有很大的应用潜力,很适合作为超高密度垂直磁记录材料。Due to the good thermal stability and high recording density of perpendicular magnetic recording materials, it provides favorable conditions for realizing ultra-high density information storage. Perpendicular magnetic recording requires that the size of magnetic particles be as small as possible under the premise of thermal stability. In order to improve thermal stability, materials with high magnetic anisotropy (K u ) must be used as magnetic recording media. The equiatomic ratio CoPt with L1 0 structure is an ordered regular tetragonal phase, the Co and Pt atomic layers are arranged alternately along the c-axis direction, the c-axis is slightly shorter than the a-axis, and the c-axis is the easy magnetization direction. The tetragonal structure of the axial compression deformation makes the CoPt alloy have a high (10 6 -10 7 J/m 3 ) perpendicular magnetic anisotropy, high coercive force and good corrosion resistance, which can effectively improve the thermal stability of the bit properties, reduce media noise, and can greatly increase the magnetic recording density, so it has great application potential in ultra-high recording density magnetic recording media, and is very suitable as an ultra-high-density perpendicular magnetic recording material.

在高密度垂直记录介质的工业运用中,存在为了获得L10相,需要300℃以上的基片温度或500℃以上的热处理温度。高温会使得颗粒尺寸难以控制,也会延长产品的生产周期,最终增加工业生产的成本的问题。目前,研究者们都致力于选用合适的底层(如Ag,C,BN),诱导CoPt合金薄膜的磁晶颗粒向(001)垂直取向生长。或者通过掺入第三种非磁性杂质(如Ag,Si3N4,Al2O3,SiO2,B2O3,BN,TiO2,B),不仅降低退火温度,还可以大大减弱晶粒间的磁交换耦合作用。In the industrial application of high-density perpendicular recording media, in order to obtain the L1 0 phase, a substrate temperature of 300°C or higher or a heat treatment temperature of 500°C or higher is required. High temperature will make it difficult to control the particle size, and it will also prolong the production cycle of the product, which will eventually increase the cost of industrial production. At present, researchers are committed to selecting a suitable bottom layer (such as Ag, C, BN) to induce the magnetic grains of CoPt alloy films to grow in the (001) vertical orientation. Or by doping a third nonmagnetic impurity (such as Ag, Si 3 N 4 , Al 2 O 3 , SiO 2 , B 2 O 3 , BN, TiO 2 , B), not only lowering the annealing temperature, but also greatly weakening the crystallinity Magnetic exchange coupling between particles.

发明内容 Contents of the invention

本发明针对在生产工艺中遇到的高退火温度、被外界环境影响,容易被氧化、腐蚀、磁性颗粒难以向L10(001)垂直取向生长的问题,提供一种CoPt/Ta垂直磁化膜的双层结构材料及其制备方法。本发明没有采用底层材料和材料掺杂的方法,而是在CoPt薄膜上沉积保护层材料Ta,以解决CoPt磁性薄膜在制备生产工艺过程中容易被氧化而引起的磁各向异性能降低的问题,并促进L10(001)垂直取向的生长。The invention provides a CoPt/Ta perpendicular magnetization film for the problems of high annealing temperature encountered in the production process, being easily oxidized and corroded by the influence of the external environment, and difficult for magnetic particles to grow to the vertical orientation of L1 0 (001). Double-layer structure material and its preparation method. The present invention does not adopt the bottom material and material doping method, but deposits the protective layer material Ta on the CoPt film to solve the problem that the magnetic anisotropy energy of the CoPt magnetic film is easily oxidized during the preparation and production process. , and promote the growth of L1 0 (001) vertical orientation.

本发明提供的一种CoPt/Ta垂直磁化膜的双层结构材料,它依次包括基片,CoPt磁性层,Ta保护层,其中,CoPt的厚度为10nm~100nm,Ta保护层的厚度为1nm~20nm。A double-layer structure material of a CoPt/Ta perpendicular magnetization film provided by the present invention comprises a substrate, a CoPt magnetic layer, and a Ta protection layer in sequence, wherein the thickness of the CoPt is 10 nm to 100 nm, and the thickness of the Ta protection layer is 1 nm to 1 nm. 20nm.

所述的CoPt/Ta垂直磁化膜的双层结构材料有两种制备方法,CoPt复合靶法和CoPt合金靶法。There are two preparation methods for the double-layer structure material of the CoPt/Ta perpendicular magnetization film, a CoPt composite target method and a CoPt alloy target method.

CoPt复合靶法的步骤包括:The steps of the CoPt composite target method include:

第1步制备Co金属靶和Ta金属靶;The first step prepares Co metal target and Ta metal target;

第2步在Co靶上贴置Pt片;The second step is to attach Pt sheets on the Co target;

第3步以Ar2作为溅射气体,先对贴置Pt片后的Co靶进行溅射,再在CoPt上溅射一层Ta层,制备得到具有Ta保护层的CoPt磁性薄膜材料;In the third step, Ar is used as the sputtering gas, and the Co target after the Pt sheet is first sputtered, and then a layer of Ta layer is sputtered on the CoPt to prepare a CoPt magnetic thin film material with a Ta protective layer;

第4步将制备好的CoPt单层磁性薄膜和CoPt/Ta双层结构磁性薄膜放置于真空退火炉中高温下退火。Step 4 Place the prepared CoPt single-layer magnetic film and CoPt/Ta double-layer magnetic film in a vacuum annealing furnace for annealing at high temperature.

CoPt合金靶法的步骤包括:The steps of the CoPt alloy target method include:

第1步制备CoPt合金靶和Ta金属靶;The first step is to prepare CoPt alloy target and Ta metal target;

第2步以Ar2作为溅射气体,先对CoPt合金靶进行溅射,再在CoPt上对Ta靶进行溅射,制备得到具有Ta保护层的CoPt磁性薄膜材料;In the second step, Ar is used as the sputtering gas, and the CoPt alloy target is sputtered first, and then the Ta target is sputtered on the CoPt to prepare a CoPt magnetic thin film material with a Ta protective layer;

第3步将制备好的CoPt/Ta双层结构磁性薄膜放置于真空退火炉中高温下退火。In the third step, the prepared CoPt/Ta double-layer magnetic thin film is placed in a vacuum annealing furnace for annealing at high temperature.

本发明的技术效果体现在:与没有加Ta保护层的CoPt材料相比,本发明提供的CoPt/Ta结构的磁性材料,具有高磁晶各向异性以及大的垂直矫顽力。控制退火的温度在650℃,即可以促进CoPt的磁性颗粒沿c磁化轴方向生长。本发明考虑Ta具有非常出色的化学性质以及极高的抗腐蚀性,将可对磁性材料在溅射、退火、测试过程中遇到的氧化及腐蚀起到很好的保护作用。在制备CoPt磁性材料,再在上面加入Ta保护层之后,CoPt/Ta相对于没有加保护层的CoPt,磁性能提高很多。主要原因有:①Ta非磁性元素在溅射沉积过程中,向晶界偏聚,使晶界区成为非磁性区域,从而改变磁化反转机制,提高薄膜介质矫顽力。②在合适的退火温度下,由于热扩散作用,Ta原子向CoPt磁性层扩散,减弱了相邻磁性颗粒间的交换耦合作用,减小介质翻转的噪声,提高了记录位密度的提高。The technical effect of the present invention is reflected in that: compared with the CoPt material without a Ta protective layer, the magnetic material of the CoPt/Ta structure provided by the present invention has high magnetocrystalline anisotropy and large vertical coercive force. Controlling the annealing temperature at 650°C can promote the growth of CoPt magnetic particles along the c magnetization axis. The present invention considers that Ta has very excellent chemical properties and extremely high corrosion resistance, and can play a very good role in protecting magnetic materials from oxidation and corrosion encountered in sputtering, annealing and testing processes. After the CoPt magnetic material is prepared and a Ta protective layer is added on it, the magnetic properties of CoPt/Ta are much improved compared to CoPt without a protective layer. The main reasons are as follows: ① Ta non-magnetic elements segregate to the grain boundary during the sputtering deposition process, making the grain boundary region a non-magnetic region, thereby changing the magnetization reversal mechanism and improving the coercive force of the thin film medium. ②Under the appropriate annealing temperature, due to thermal diffusion, Ta atoms diffuse to the CoPt magnetic layer, which weakens the exchange coupling between adjacent magnetic particles, reduces the noise of medium inversion, and improves the recording bit density.

附图说明 Description of drawings

图1是CoPt/Ta垂直磁化膜的膜层结构示意图。FIG. 1 is a schematic diagram of the layer structure of a CoPt/Ta perpendicular magnetization film.

图2是CoPt薄膜的垂直磁滞回线。Figure 2 is the vertical hysteresis loop of CoPt film.

图3是CoPt垂直磁化膜的差示扫描量热图。Figure 3 is a differential scanning calorimetry diagram of a CoPt perpendicular magnetization film.

图4是不同厚度的CoPt薄膜加1nm的Ta保护层的磁滞回线。Fig. 4 is the hysteresis loop of CoPt film with different thickness and 1nm Ta protection layer.

图5是不同厚度的CoPt薄膜加10nm的Ta保护层的磁滞回线。Figure 5 is the hysteresis loops of CoPt films with different thicknesses and a 10nm Ta protective layer.

图6是不同厚度的CoPt薄膜加20nm的Ta保护层的磁滞回线。Figure 6 is the hysteresis loops of CoPt thin films with different thicknesses and a 20nm Ta protective layer.

图7是没有加Ta保护层和加过Ta保护层的CoPt薄膜的磁滞回线。Fig. 7 is the hysteresis loop of the CoPt film without Ta protection layer and with Ta protection layer.

图8是没有加Ta保护层和加过Ta保护层的CoPt薄膜的XRD图。Fig. 8 is the XRD pattern of the CoPt thin film without Ta protection layer and with Ta protection layer.

图9是没有加Ta保护层和加过Ta保护层的CoPt薄膜的Co原子的XPS光电子谱线图。Fig. 9 is an XPS photoelectron spectrum diagram of Co atoms in CoPt thin films without and with a Ta protective layer.

图10是CoPt/Ta薄膜在650℃下退火不同时间的磁滞回线。Figure 10 is the hysteresis loops of CoPt/Ta films annealed at 650°C for different times.

图11是CoPt/Ta薄膜在650℃下退火10min的所测得的三维表面形貌图。Figure 11 is the measured three-dimensional surface topography of the CoPt/Ta thin film annealed at 650°C for 10 minutes.

图12是CoPt/Ta薄膜在650℃下退火30min的所测得的三维表面形貌图。Fig. 12 is the measured three-dimensional surface topography of the CoPt/Ta thin film annealed at 650°C for 30 minutes.

图13是CoPt/Ta薄膜在650℃下退火1h的所测得的三维表面形貌图。Figure 13 is the measured three-dimensional surface topography of the CoPt/Ta thin film annealed at 650 °C for 1 h.

具体实施方式 Detailed ways

下面通过借助实施例更加详细地说明本发明,但以下实施例仅是说明性的,本发明的保护范围并不受这些实施例的限制。The present invention is described in more detail below by means of examples, but the following examples are only illustrative, and the protection scope of the present invention is not limited by these examples.

本实施例所述的一种以Ta作为保护层的CoPt/Ta双层结构的磁性材料,如图1所示,它依次包括基片3,CoPt磁性层2,Ta保护层1,其中,CoPt的厚度为10nm~100nm(优选值为50nm),Ta保护层的厚度为1nm~20nm(优选值为10nm)。A kind of magnetic material of CoPt/Ta double-layer structure with Ta as protective layer described in the present embodiment, as shown in Figure 1, it comprises substrate 3, CoPt magnetic layer 2, Ta protective layer 1 successively, wherein, CoPt The thickness of the Ta protective layer is 10 nm to 100 nm (preferably 50 nm), and the thickness of the Ta protective layer is 1 nm to 20 nm (preferably 10 nm).

本发明提供的以Ta作为保护层的CoPt/Ta双层结构的磁性材料,具有高磁晶各向异性能以及大的磁性矫顽力。在溅射沉积过程中,Ta作为非磁性元素向CoPt与Ta晶界偏聚,使晶界区成为非磁性区域,从而改变磁化反转机制,提高薄膜介质矫顽力。以及在热处理过程下,由于热扩散作用,Ta原子向CoPt磁性层扩散,减弱了相邻磁性颗粒间的交换耦合作用,减小介质的噪声,提高了记录位密度。The magnetic material of the CoPt/Ta double-layer structure with Ta as the protective layer provided by the invention has high magnetocrystalline anisotropy and large magnetic coercive force. During the sputtering deposition process, Ta, as a nonmagnetic element, segregates to the CoPt and Ta grain boundaries, making the grain boundary region a nonmagnetic region, thereby changing the magnetization reversal mechanism and improving the coercive force of the thin film medium. And in the heat treatment process, due to thermal diffusion, Ta atoms diffuse to the CoPt magnetic layer, which weakens the exchange coupling between adjacent magnetic particles, reduces the noise of the medium, and improves the recording bit density.

所述的CoPt/Ta垂直磁化膜的双层结构材料可以采用CoPt复合靶法和CoPt合金靶法进行制备,也可以采用溅射法、化学气相沉积法、蒸发法、原子层沉积法、金属有机物热分解法或激光辅助沉积法等方法中任意一种制备方法。The double-layer structure material of the CoPt/Ta perpendicular magnetization film can be prepared by CoPt composite target method and CoPt alloy target method, and can also be prepared by sputtering method, chemical vapor deposition method, evaporation method, atomic layer deposition method, metal organic Any one of the preparation methods such as thermal decomposition method or laser-assisted deposition method.

在本发明提供的制备方法中,可以采用下述优选的工艺参数:In the preparation method provided by the invention, following preferred processing parameters can be adopted:

溅射Co靶和CoPt合金靶功率为15W~200W(进一步优选值为20W),溅射Ar气压为0.45Pa~1.0Pa(进一步优选值为0.5Pa)。The power of the sputtering Co target and the CoPt alloy target is 15W-200W (a further preferred value is 20W), and the sputtering Ar pressure is 0.45Pa-1.0Pa (a further preferred value is 0.5Pa).

溅射Ta靶功率为15W~200W(进一步优选值为25W),溅射Ar气压为0.45Pa~1.0Pa(进一步优选值为0.5Pa)。The sputtering Ta target power is 15W-200W (more preferably 25W), and the sputtering Ar gas pressure is 0.45Pa-1.0Pa (more preferably 0.5Pa).

退火温度为600℃~850℃,进一步地,CoPt/Ta和CoPt的退火时间为10min~1h。The annealing temperature is 600°C-850°C, and further, the annealing time of CoPt/Ta and CoPt is 10min-1h.

本发明所述的CoPt/Ta结构及使用Ta作为CoPt保护层的制备方法可采用溅射法、化学气相沉积法、蒸发法、原子层沉积法、金属有机物热分解法或激光辅助沉积法等方法中任意一种制备方法。The CoPt/Ta structure of the present invention and the preparation method using Ta as the CoPt protective layer can adopt methods such as sputtering, chemical vapor deposition, evaporation, atomic layer deposition, metal-organic thermal decomposition, or laser-assisted deposition. any one of the preparation methods.

实施例1Example 1

本文实施例选用磁控溅射方法制备CoPt/Ta以及CoPt磁性薄膜。In this embodiment, the magnetron sputtering method is used to prepare CoPt/Ta and CoPt magnetic thin films.

基片采用Si(100),制备好直径为100mm、厚度为5mm的CoPt合金靶材(原子比Co∶Pt=1∶1),靶的纯度为99.999%(原子百分比)。用磁控溅射的方法,溅射时通入纯度为99.999%的Ar气。The substrate is Si(100), and a CoPt alloy target with a diameter of 100 mm and a thickness of 5 mm (atomic ratio Co:Pt=1:1) is prepared, and the purity of the target is 99.999% (atomic percentage). Using the method of magnetron sputtering, Ar gas with a purity of 99.999% is introduced during sputtering.

具体的工艺参数如下:CoPt合金靶采用直流功率电源,溅射功率为120W;溅射Ar气压为1Pa;每次溅射前预溅射1小时以保证CoPt合金靶表面的氧化层被去除干净。通过台阶仪测量薄膜的厚度,制备50nm的CoPt磁性薄膜。利用VSM测试CoPt(50nm)薄膜的垂直磁特性。图2所示的CoPt的垂直磁化曲线可以看出,CoPt薄膜的垂直矫顽力为2544.6Oe。CoPt薄膜在经过优化的溅射功率和退火温度下退火1h,CoPt的磁性晶粒趋于向L10(001)方向生长。The specific process parameters are as follows: CoPt alloy target adopts DC power supply, sputtering power is 120W; sputtering Ar pressure is 1Pa; pre-sputter for 1 hour before each sputtering to ensure that the oxide layer on the surface of CoPt alloy target is completely removed. The thickness of the film was measured by a step meter to prepare a 50nm CoPt magnetic film. The vertical magnetic properties of CoPt (50nm) thin films were tested by VSM. From the vertical magnetization curve of CoPt shown in Figure 2, it can be seen that the vertical coercive force of CoPt film is 2544.6Oe. CoPt films were annealed for 1h at optimized sputtering power and annealing temperature, and the magnetic grains of CoPt tended to grow in the direction of L1 0 (001).

实施例2Example 2

对CoPt薄膜的相转变温度进行考察。The phase transition temperature of CoPt thin film was investigated.

基片采用Si(100),制备好直径为100mm、厚度为5mm的Co靶材,靶的纯度为99.999%(原子百分比),大小为2*10mm的Pt片均匀地贴在Co靶上,通过改变Pt片的数量来调节Co与Pt的原子比为1∶1。然后用磁控溅射的方法,溅射时通入纯度为99.999%的Ar气。The substrate is Si(100), and a Co target with a diameter of 100 mm and a thickness of 5 mm is prepared. The purity of the target is 99.999% (atomic percentage). The Pt sheet with a size of 2*10 mm is evenly pasted on the Co target. The atomic ratio of Co to Pt was adjusted to be 1:1 by changing the number of Pt flakes. Then, the method of magnetron sputtering is used, and Ar gas with a purity of 99.999% is introduced during sputtering.

具体的工艺参数如下:Co靶采用直流功率电源,溅射功率为20W;溅射Ar气压为0.5Pa;每次溅射前预溅射1小时以保证Co靶表面的氧化层被去除干净。每次改变贴在Co靶上的Pt片数量就可以得到不同原子比的CoPt磁性薄膜。通过用扫描电子显微镜附带的能谱仪分析,可以得到薄膜中各个元素所占的原子百分比。最后测试结果发现在Co靶上贴8片Pt片可以达到Co∶Pt=1∶1的比例。通过台阶仪分析得到薄膜的厚度,分别制备10nm,50nm,100nm的CoPt磁性薄膜。The specific process parameters are as follows: the Co target adopts a DC power supply, and the sputtering power is 20W; the sputtering Ar pressure is 0.5Pa; each sputtering is pre-sputtered for 1 hour to ensure that the oxide layer on the surface of the Co target is completely removed. CoPt magnetic films with different atomic ratios can be obtained by changing the number of Pt sheets attached to the Co target each time. By analyzing with the energy spectrometer attached to the scanning electron microscope, the atomic percentage of each element in the film can be obtained. The final test results show that the ratio of Co:Pt=1:1 can be achieved by pasting 8 Pt sheets on the Co target. The thickness of the film was obtained by profilometer analysis, and CoPt magnetic films of 10nm, 50nm and 100nm were prepared respectively.

用DSC(差示扫描量热仪)进行差热分析,得到结果如图3。在560℃处出现一个CoPt的放热峰,说明CoPt在560℃处发生了一次相转变。因此只有退火温度高于560℃,CoPt才会发生相转变。溅射态的CoPt合金薄膜是fcc结构,只有在高温退火条件下,薄膜才能发生相转变。然而,随着退火温度的升高,CoPt晶粒的尺寸会不断的长大,晶粒的过分长大导致磁交换耦合作用,从而影响CoPt介质的磁性能和噪声的磁性能。因此确定CoPt的相转变温度可以对退火工艺进行优化,防止CoPt晶粒的过分生长。将CoPt薄膜置于高温退火炉中,设置退火温度为600℃~850℃都可以发生相转变,然而当退火温度为650℃时,既能保证薄膜中的颗粒都发生相转变,又能保证磁晶颗粒不过分长大,导致晶粒间的磁晶耦合作用致使CoPt薄膜的磁性能降低。Differential thermal analysis was carried out with DSC (differential scanning calorimeter), and the obtained results are shown in Fig. 3 . An exothermic peak of CoPt appears at 560°C, indicating that CoPt undergoes a phase transition at 560°C. Therefore, only when the annealing temperature is higher than 560 °C, the phase transformation of CoPt will occur. The sputtered CoPt alloy film has an fcc structure, and the film can undergo phase transformation only under high temperature annealing conditions. However, as the annealing temperature increases, the size of the CoPt grains will continue to grow, and the excessive growth of the grains will lead to magnetic exchange coupling, thereby affecting the magnetic properties of the CoPt medium and the magnetic properties of the noise. Therefore, determining the phase transition temperature of CoPt can optimize the annealing process and prevent excessive growth of CoPt grains. Putting the CoPt film in a high-temperature annealing furnace, and setting the annealing temperature to 600°C to 850°C, phase transition can occur. However, when the annealing temperature is 650°C, it can ensure that all particles in the film undergo phase transition and ensure that the magnetic The crystal grains do not grow too much, which leads to the magneto-crystalline coupling effect between the grains and reduces the magnetic properties of the CoPt thin film.

实施例3Example 3

制备好直径为100mm,厚度为5mm的Ta靶材,靶的纯度为99.99%(原子百分比),然后用磁控溅射的方法,溅射时通入纯度为99.999%的Ar气。在实施例一中样品10nm,50nm,100nmCoPt磁性层上分别镀一层Ta薄膜,Ta薄膜的厚度为1nm,10nm,20nm。A Ta target with a diameter of 100mm and a thickness of 5mm was prepared, and the purity of the target was 99.99% (atomic percentage), and then magnetron sputtering was used to inject Ar gas with a purity of 99.999% during sputtering. In Example 1, a layer of Ta thin film was respectively coated on the CoPt magnetic layers of 10 nm, 50 nm, and 100 nm of the samples, and the thickness of the Ta thin film was 1 nm, 10 nm, and 20 nm.

具体的工艺参数如下:Ta靶采用直流功率电源,溅射功率为25W,溅射Ar气压为0.5Pa;每次溅射前预溅射1小时以保证Ta靶表面的氧化层被去除干净。The specific process parameters are as follows: the Ta target adopts a DC power supply, the sputtering power is 25W, and the sputtering Ar pressure is 0.5Pa; pre-sputter for 1 hour before each sputtering to ensure that the oxide layer on the Ta target surface is completely removed.

用VSM分别测试10nm,50nm,100nmCoPt薄膜上分别镀1nm,10nm,20nm的Ta保护层的垂直磁性能。10nm,50nm,100nmCoPt薄膜上加1nmTa保护层的对比磁滞回线如图4所示。外加10nm的Ta保护层的三个不同厚度的CoPt薄膜样品的M-H垂直磁化曲线如图5所示。三个厚度的CoPt样品加20nm的Ta保护层的对比磁滞回线如图6所示。从图4,图5,图6的对比垂直磁化曲线可以看出,当CoPt薄膜的厚度为50nm,Ta保护层的厚度为10nm时,所测的垂直矫顽力最大,其值为1289.4Oe。The vertical magnetic properties of 1nm, 10nm, 20nm Ta protective layers plated on 10nm, 50nm, 100nm CoPt thin films were respectively tested by VSM. The comparative hysteresis loops of 10nm, 50nm, and 100nm CoPt films with a 1nmTa protective layer are shown in Figure 4. The M-H perpendicular magnetization curves of three CoPt film samples with different thicknesses added with a 10nm Ta protective layer are shown in Fig. 5 . The comparative hysteresis loops of three thicknesses of CoPt samples plus a 20nm Ta protective layer are shown in Figure 6. From the comparison of vertical magnetization curves in Figure 4, Figure 5, and Figure 6, it can be seen that when the thickness of the CoPt film is 50nm and the thickness of the Ta protective layer is 10nm, the measured vertical coercive force is the largest, and its value is 1289.4Oe.

用VSM,XRD以及XPS分别测CoPt薄膜和CoPt(50nm)/Ta(10nm)(两个样品都在真空度为1×10-4的退火炉中退火温度为650℃下退火1h)双层结构磁性薄膜垂直磁性能、晶化程度、以及成键情况。测量两个样品的磁滞回线、晶化峰、成键峰见图7,图8,图9。从图7中可以看到,两个样品的饱和磁化强度相差不大,都为600emu/cm3左右,没有加Ta保护层的CoPt磁化膜垂直磁矫顽力只有110.5Oe,而加了Ta保护层的CoPt磁化膜垂直磁矫顽力高达1289.4Oe。图8中对比了CoPt薄膜和CoPt(50nm)/Ta(10nm)磁性膜的晶化程度,CoPt薄膜退火足够的时间后,出现了(111)、(200)、(002)布拉格衍射峰,而CoPt(50nm)/Ta(10nm)薄膜除了出现上面3个基本峰之外,L10(001)的峰也出现了。通过谢乐(scherrer)公式CoPt film and CoPt(50nm)/Ta(10nm) were measured by VSM, XRD and XPS (both samples were annealed at 650°C for 1h in an annealing furnace with a vacuum degree of 1×10 -4 ) double-layer structure Vertical magnetic properties, degree of crystallization, and bonding of magnetic thin films. The measured hysteresis loops, crystallization peaks and bonding peaks of the two samples are shown in Figure 7, Figure 8, and Figure 9. It can be seen from Figure 7 that the saturation magnetization of the two samples is not much different, both are about 600emu/cm 3 , the perpendicular magnetic coercive force of the CoPt magnetization film without the Ta protection layer is only 110.5Oe, while the Ta protection layer is added The vertical magnetic coercive force of the CoPt magnetized film of the layer is as high as 1289.4Oe. Figure 8 compares the crystallization degree of CoPt film and CoPt(50nm)/Ta(10nm) magnetic film. After the CoPt film is annealed for a sufficient time, (111), (200), (002) Bragg diffraction peaks appear, while CoPt(50nm)/Ta(10nm) thin film besides the above three basic peaks, the peak of L1 0 (001) also appeared. By Scherrer's formula

D=Kλ/Bcos(θ)D=Kλ/Bcos(θ)

(其中K为谢乐常数,当B为衍射峰的半高宽时,K取0.9,θ为布拉格衍射角,λ为使用的X射线波长),计算得到形成的L10(001)晶粒尺寸(D)=42nm。(wherein K is the Scherrer constant, when B is the half maximum width of the diffraction peak, K is 0.9, θ is the Bragg diffraction angle, and λ is the X-ray wavelength used), the calculated L1 0 (001) grain size formed (D) = 42nm.

图9是两个样品的Co原子2p区域的光电子能谱图。Co2p区域的光电子峰表现的结合能分别是780.5ev和796.9ev的双峰。双峰的出现源于Co原子的2p能级轨道自旋分裂,并分别对应于Co2p1/2,Co2p3/2,光电子峰峰型为Doniach-Sunjic非对称型。对于CoPt/Ta而言,2p区域的高结合能端780.5ev处基本呈现对称型的峰,在距离Co2p1/2峰高结合能5.3ev处出现一携上伴峰(shake-up satellite),伴峰的出现是源于O2p能带电子向Co2p能带空轨道跃迁造成的。Fig. 9 is the photoelectron spectrum of the Co atom 2p region of the two samples. The photoelectron peaks in the Co2p region show double peaks with binding energies of 780.5 eV and 796.9 eV, respectively. The appearance of the double peaks originates from the 2p energy level orbital spin splitting of Co atoms, and they correspond to Co2p1/2 and Co2p3/2 respectively, and the photoelectron peaks are of Doniach-Sunjic asymmetry. For CoPt/Ta, a symmetrical peak appears at the high binding energy end of the 2p region at 780.5 eV, and a shake-up satellite appears at a distance of 5.3 eV from the Co2p1/2 peak. The appearance of the peak is caused by the transition of electrons in the O2p band to the empty orbitals in the Co2p band.

图7、图8、图9的对比分析说明,650℃退火1h后,CoPt/Ta薄膜中L10(001)方向的晶粒出现,Ta盖帽层中Ta原子向磁性层的扩散有效促进了CoPt磁性颗粒向c易磁化轴生长。并且CoPt/Ta薄膜中的Ta盖帽层有效地遏制了退火过程中O原子扩散到CoPt磁性层对其磁性能的不利影响。在650℃的热退火中,Ta原子扩散到CoPt层中,有效地隔离了CoPt颗粒间的相互作用,减弱了CoPt磁颗粒由于高温退火导致的晶粒过分长大而形成的交换耦合作用,从而大大的提高的CoPt薄膜的磁各向异性。The comparative analysis of Figure 7, Figure 8, and Figure 9 shows that after annealing at 650 °C for 1 h, grains in the L1 0 (001) direction appeared in the CoPt/Ta film, and the diffusion of Ta atoms in the Ta capping layer to the magnetic layer effectively promoted the CoPt The magnetic particles grow toward the c easy magnetization axis. And the Ta capping layer in the CoPt/Ta thin film effectively restrains the adverse effect of O atoms diffusing into the CoPt magnetic layer during the annealing process on its magnetic properties. During thermal annealing at 650 °C, Ta atoms diffuse into the CoPt layer, effectively isolating the interaction between CoPt particles and weakening the exchange coupling effect of CoPt magnetic particles due to excessive grain growth caused by high-temperature annealing, thereby Greatly improved magnetic anisotropy of CoPt films.

实施例4Example 4

对实施例3中的样品CoPt(50nm)/Ta(10nm)在650℃下分别退火10min,30min,1h,进行磁特性分析以及原子力显微镜测试。测试不同退火温度下的薄膜的垂直矫顽力以及观测表面形貌并测定表面粗糙度。如图10所示,CoPt(50nm)/Ta(10nm)在650℃下退火10min,30min,1h的M-H⊥磁滞回线。退火10min的垂直矫顽力只有949.7Oe,退火30min的垂直矫顽力737.7Oe,退火1h的矫顽力为1289.4Oe。图11,图12,图13为CoPt(50nm)/Ta(10nm)在650℃下分别退火10min,30min,1h的原子力显微镜(AFM)三维形貌图,从图上很直观的反映薄膜的表面平整度,薄膜样品的表面颗粒较密集,凹凸波动较小,颗粒排列较整齐。从这三张3D图中可以看出,随着退火时间的加长,晶粒在不断地长大。从粗糙度分析的结果中,读出在650℃下退火10min的CoPt(50nm)/Ta(10nm)薄膜的表面粗糙度为1.705nm,退火30min的薄膜表面粗糙度为3.181nm,退火1h的表面粗糙度为5.627nm(其中硅片表面的粗糙度并没有扣除)。退火1h的表面粗糙度比退火10min的表面粗糙度要大很多,表明随着退火时间的不断加长,薄膜的晶粒在持续增大。与此同时,退火1h的矫顽力比退火10min的垂直膜面的矫顽力也要大很多,说明虽然CoPt薄膜导结晶性增强,致晶粒一直在长大,取向性增强,磁矩排列方向趋于一致,但是,CoPt晶粒的尺寸没有达到磁单畴的尺寸。The sample CoPt(50nm)/Ta(10nm) in Example 3 was annealed at 650° C. for 10 min, 30 min and 1 h respectively, and magnetic property analysis and atomic force microscope test were performed. Test the vertical coercive force of the film at different annealing temperatures, observe the surface morphology and measure the surface roughness. As shown in Figure 10, the M-H⊥ hysteresis loops of CoPt(50nm)/Ta(10nm) annealed at 650°C for 10min, 30min, and 1h. The vertical coercivity of annealing for 10min is only 949.7Oe, the vertical coercivity of annealing for 30min is 737.7Oe, and the coercivity of annealing for 1h is 1289.4Oe. Figure 11, Figure 12, and Figure 13 are three-dimensional topography images of CoPt(50nm)/Ta(10nm) annealed at 650°C for 10min, 30min, and 1h, respectively, by atomic force microscopy (AFM), which directly reflect the surface of the film Flatness, the surface particles of the film sample are denser, the unevenness is smaller, and the particles are arranged more neatly. It can be seen from these three 3D images that the grains are growing continuously as the annealing time increases. From the results of the roughness analysis, it is read that the surface roughness of the CoPt (50nm)/Ta (10nm) film annealed at 650°C for 10min is 1.705nm, the surface roughness of the film annealed for 30min is 3.181nm, and the surface roughness of the film annealed for 1h is The roughness is 5.627nm (the roughness of the silicon wafer surface has not been deducted). The surface roughness of annealing for 1h is much larger than that of annealing for 10min, which indicates that the grain size of the film continues to increase with the prolongation of annealing time. At the same time, the coercive force of the annealed 1h is much larger than the coercive force perpendicular to the film plane annealed for 10min, indicating that although the CoPt thin film has enhanced crystallinity, the crystal grains have been growing, the orientation has been enhanced, and the magnetic moments are aligned. tends to be consistent, however, the size of the CoPt grains does not reach the size of a magnetic monodomain.

以上所述为本发明的较佳实施例而已,但本发明不应该局限于该实施例和附图所公开的内容。所以凡是不脱离本发明所公开的精神下完成的等效或修改,都落入本发明保护的范围。The above description is only a preferred embodiment of the present invention, but the present invention should not be limited to the content disclosed in this embodiment and the accompanying drawings. Therefore, all equivalents or modifications that do not deviate from the spirit disclosed in the present invention fall within the protection scope of the present invention.

Claims (4)

1.一种CoPt/Ta垂直磁化膜的双层结构材料,它由依次叠置的基片、CoPt磁性层和Ta保护层构成,其中,CoPt的厚度为10nm~100nm,Ta保护层的厚度为1nm~20nm,所述Ta保护层是在CoPt磁性层上沉积得到,二者直接接触以解决CoPt磁性层在制备生产工艺过程中容易被氧化而引起的磁各向异性能降低的问题,并促进L10(001)垂直取向的生长。1. a double-layer structure material of CoPt/Ta perpendicular magnetization film, it is made of successively stacked substrate, CoPt magnetic layer and Ta protection layer, wherein, the thickness of CoPt is 10nm~100nm, and the thickness of Ta protection layer is 1nm to 20nm, the Ta protective layer is deposited on the CoPt magnetic layer, and the two are in direct contact to solve the problem of the reduction of the magnetic anisotropy caused by the CoPt magnetic layer being easily oxidized during the production process, and to promote L1 0 (001) vertically oriented growth. 2.根据权利要求1所述的CoPt/Ta垂直磁化膜的双层结构材料,其特征在于,CoPt的厚度为50nm,Ta保护层的厚度为10nm。2. The double-layer structure material of CoPt/Ta perpendicular magnetization film according to claim 1, characterized in that, the thickness of CoPt is 50nm, and the thickness of Ta protective layer is 10nm. 3.一种权利要求1所述的CoPt/Ta垂直磁化膜的双层结构材料的制备方法,其步骤包括:3. a preparation method of the double-layer structure material of CoPt/Ta perpendicular magnetization film as claimed in claim 1, its step comprises: 第1步制备CoPt层;The first step prepares the CoPt layer; 第2步以Ar2作为溅射气体,在CoPt层上溅射一层Ta层,制备得到具有Ta保护层的CoPt磁性薄膜材料;在溅射沉积过程中,Ta作为非磁性元素向CoPt与Ta晶界偏聚,使晶界区成为非磁性区域,从而改变磁化反转机制,提高薄膜介质矫顽力;The 2nd step uses Ar as the sputtering gas, sputters a layer of Ta on the CoPt layer, and prepares the CoPt magnetic film material with Ta protective layer; Grain boundary segregation makes the grain boundary region a non-magnetic region, thereby changing the magnetization reversal mechanism and improving the coercive force of the thin film medium; 第3步将制备好的CoPt/Ta双层结构磁性薄膜放置于真空退火炉中高温下退火,退火温度为600℃~850℃,Ta和CoPt的退火时间为10min~1h;在热处理过程中,由于热扩散作用,Ta原子向CoPt磁性层扩散,以减弱相邻磁性颗粒间的交换耦合作用,减小介质的噪声,并提高记录位密度。The third step is to place the prepared CoPt/Ta double-layer structure magnetic film in a vacuum annealing furnace for annealing at high temperature. Due to thermal diffusion, Ta atoms diffuse to the CoPt magnetic layer to weaken the exchange coupling between adjacent magnetic particles, reduce the noise of the medium, and increase the recording bit density. 4.根据权利要求3所述的制备方法,其特征在于,第3步中,退火温度为650℃,促进CoPt的磁性颗粒沿c磁化轴方向生长。4 . The preparation method according to claim 3 , wherein in the third step, the annealing temperature is 650° C. to promote the growth of CoPt magnetic particles along the c-magnetization axis.
CN201210245272.9A 2012-07-16 2012-07-16 Bi-layer structure material of CoPt/Ta vertical magnetic film and preparation method thereof Active CN102789786B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210245272.9A CN102789786B (en) 2012-07-16 2012-07-16 Bi-layer structure material of CoPt/Ta vertical magnetic film and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210245272.9A CN102789786B (en) 2012-07-16 2012-07-16 Bi-layer structure material of CoPt/Ta vertical magnetic film and preparation method thereof

Publications (2)

Publication Number Publication Date
CN102789786A CN102789786A (en) 2012-11-21
CN102789786B true CN102789786B (en) 2015-05-20

Family

ID=47155169

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210245272.9A Active CN102789786B (en) 2012-07-16 2012-07-16 Bi-layer structure material of CoPt/Ta vertical magnetic film and preparation method thereof

Country Status (1)

Country Link
CN (1) CN102789786B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114999801B (en) * 2022-05-26 2023-07-21 中国科学院金属研究所 A method for improving the coercive force of NdFeB-based permanent magnet thick film

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1822110A (en) * 2005-02-03 2006-08-23 株式会社东芝 Magnetic recording apparatus
CN101038754A (en) * 2006-09-14 2007-09-19 山西师范大学 Super-high density vertical magnetic recording medium and method for making same
CN102280574A (en) * 2011-01-07 2011-12-14 江苏多维科技有限公司 Thin film magnetoresistance sensing element, combination of multiple sensing elements, and electronic device coupled with combination
CN102376873A (en) * 2010-08-19 2012-03-14 索尼公司 Magnetic memory element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1822110A (en) * 2005-02-03 2006-08-23 株式会社东芝 Magnetic recording apparatus
CN101038754A (en) * 2006-09-14 2007-09-19 山西师范大学 Super-high density vertical magnetic recording medium and method for making same
CN102376873A (en) * 2010-08-19 2012-03-14 索尼公司 Magnetic memory element
CN102280574A (en) * 2011-01-07 2011-12-14 江苏多维科技有限公司 Thin film magnetoresistance sensing element, combination of multiple sensing elements, and electronic device coupled with combination

Also Published As

Publication number Publication date
CN102789786A (en) 2012-11-21

Similar Documents

Publication Publication Date Title
JP3809418B2 (en) Magnetic recording medium and magnetic recording apparatus
JP5145437B2 (en) Magnetic recording medium
JP5137087B2 (en) Manufacturing method of L1o regular perpendicular recording medium
CN104620316B (en) The conductive substrate of FePt granule medium of the growth with (001) texture on the glass substrate
JP6083163B2 (en) Perpendicular magnetic recording medium and manufacturing method thereof
CN100468525C (en) Manufacture of Magnetic Recording Media
CN101320616A (en) A spin valve with perpendicular magnetic anisotropy
JP2004362746A (en) Magnetic recording medium, magnetic storage device, and method of manufacturing magnetic recording medium
CN101692374B (en) Perpendicularly easy-axis orientated artificially synthetic antiferromagnet and pseudo-spin valve film structure
CN101217041A (en) A preparation method for ultra-high density perpendicular magnetic recording medium
CN105374374B (en) A kind of high density, low cost magnetic recording media FeNi alloys and preparation method thereof
CN103440875A (en) FeRh/FePt bi-layer film for super high density heat assisted magnetic recording and preparation method thereof
TW201025314A (en) Perpendicular magnetic recording medium
CN100575541C (en) A method for improving the coercive force of metal magnetic multilayer film
CN100390865C (en) Method for directional control growth of L10-FePt
CN102789786B (en) Bi-layer structure material of CoPt/Ta vertical magnetic film and preparation method thereof
CN102842312B (en) Preparation method of perpendicular magnetic recording material
US20090092858A1 (en) Perpendicular magnetic recording film medium and method of manufacturing the same
CN102576546B (en) Magnetic recording medium and magnetic recording and reproducing device
CN102290193B (en) NiFe film material with high magnetoresistance and preparation method thereof
TWI383886B (en) Discontinuous islanded ferromagnetic thin film with a perpendicular magnetic anisotropy
CN104318932A (en) Magnetic storage medium film adjustable in phase-transition temperature and coercive force and manufacturing method thereof
CN101215689A (en) A New Method for Preparing (002) Textured Fe Thin Films
JP2004014056A (en) Perpendicular magnetic recording medium, method of manufacturing the same, and magnetic storage device
CN102522094A (en) Double-layer structure bottom material of SmCo5 vertical magnetization film and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant