CN102780389A - Hiccup type overvoltage and overcurrent protecting circuit capable of setting time length - Google Patents

Hiccup type overvoltage and overcurrent protecting circuit capable of setting time length Download PDF

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Publication number
CN102780389A
CN102780389A CN2012102387931A CN201210238793A CN102780389A CN 102780389 A CN102780389 A CN 102780389A CN 2012102387931 A CN2012102387931 A CN 2012102387931A CN 201210238793 A CN201210238793 A CN 201210238793A CN 102780389 A CN102780389 A CN 102780389A
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China
Prior art keywords
nand gate
pin
circuit
output
triode
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Pending
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CN2012102387931A
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Chinese (zh)
Inventor
王雪飞
杨银平
陈志伟
李承红
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ECU ELECTRONICS INDUSTRIAL Co Ltd
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ECU ELECTRONICS INDUSTRIAL Co Ltd
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Priority to CN2012102387931A priority Critical patent/CN102780389A/en
Publication of CN102780389A publication Critical patent/CN102780389A/en
Pending legal-status Critical Current

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Abstract

The invention relates to a hiccup type overvoltage and overcurrent protecting circuit capable of setting time length. The hiccup type overvoltage and overcurrent protecting circuit comprises an NAND gate, wherein the input end of the NAND gate is connected with a protected circuit detection point of the output voltage/current signals, the output end of the NAND gate is connected with the input end of a second NAND gate, the input end of the second NAND gate is connected with a charging capacitor C1, the output end of the second NAND gate is connected with the input end of the first NAND gate, and the output end of the first NAND gate is connected with a follow-up circuit of the protected circuit by a switch tube Q2. When the output of the detection point of the protected circuit is normal, the switch tube Q2 stops, and the protected circuit works normally; otherwise, when a monitoring point of the protected circuit outputs overvoltage or overcurrent, the switch tube Q2 is conducted so as to protect the start. When the output of the detection point of the protected circuit is between the normal voltage and the overvoltage, the protecting circuit can be implemented in a repeating manner under the protected-unprotected state, and shows a hiccup phenomenon, and the protection time of the circuit can be changed by changing the value of a capacitor C1.

Description

A kind of formula of having the hiccups over-voltage over-current protection circuit that duration is set
Technical field
The present invention relates to a kind of over-voltage over-current protection circuit, the especially a kind of formula of having the hiccups over-voltage over-current protection circuit that duration is set.
Background technology
In general, Switching Power Supply all requires to have the over-voltage over-current protection function, and when guaranteeing that electric power output voltage (electric current) is excessive, power supply can not damage.Common protective circuit has the self-locking and two kinds of the formula protections of having the hiccups, in case during self-locking protective circuit output voltage too high (or electric current is excessive), protective circuit will start, power supply quits work, and needs this moment power cut-off, and the investigation fault is repaired, and restarts power supply;--protection--work---again protection that and the formula protective circuit of having the hiccups is when overvoltage appears in power supply, and work can appear in power supply ... Polyisomenism, disappear up to fault.For the excessive power supply of some start moment impact voltages (electric current), the formula of having the hiccups protected mode is more more convenient than self-locking protected mode, yet, also do not occur at present the formula of the having the hiccups protective circuit of protecting duration can be set.
Summary of the invention
The object of the present invention is to provide a kind of formula of having the hiccups over-voltage over-current protection circuit be provided with duration that the guard time function can be set.
For realizing above-mentioned purpose; The present invention has adopted following technical scheme: a kind of formula of having the hiccups over-voltage over-current protection circuit that duration is set; Comprise first NAND gate; Its input be used for being linked to each other of output voltage signal by the protective circuit test point, its output links to each other with the input of second NAND gate, the input termination charging capacitor C1 of second NAND gate; The output of second NAND gate links to each other with the input of first NAND gate, and the output of first NAND gate connects by the subsequent conditioning circuit of protective circuit through switching tube Q2.
Can know that by technique scheme when by the output of protective circuit test point just often, switching tube Q2 ends, by the protective circuit operate as normal; Otherwise, when by protective circuit monitoring point output overvoltage or overcurrent, switching tube Q2 conducting, protection starts, if by protective circuit monitoring point output overvoltage or overcurrent always, then circuit can be in guard mode always.When by the output of protective circuit test point between normal and overvoltage the time; The present invention will be in protection---repeats under the state do not protected; Present the phenomenon of having the hiccups,, can change the guard time of circuit through changing the value of charging capacitor C1; The value of charging capacitor C1 is big more, and guard time is long more.
Description of drawings
Fig. 1 is circuit theory diagrams of the present invention;
Fig. 2 is when C1=1uF, the voltage sketch map of output of the present invention;
Fig. 3 is when C1=0.1uF, the voltage sketch map of output of the present invention.
Embodiment
A kind of formula of having the hiccups over-voltage over-current protection circuit that duration is set; Comprise first NAND gate, its input be used for being linked to each other of output voltage signal by the protective circuit test point, its output links to each other with the input of second NAND gate; The input termination charging capacitor C1 of second NAND gate; The output of second NAND gate links to each other with the input of first NAND gate, and the output of first NAND gate connects by the subsequent conditioning circuit of protective circuit through switching tube Q2, and is as shown in Figure 1.
As shown in Figure 1; Described first NAND gate is NAND gate U1A, and described second NAND gate is NAND gate U1B, and described switching tube Q2 is triode Q2; The 2nd pin of NAND gate U1A links to each other with the test point that is used for the output voltage signal; The 1st pin of NAND gate U1A links to each other with the 4th pin of NAND gate U1B, and the 3rd pin of NAND gate U1A links to each other with the 5th pin of NAND gate U1B through resistance R 1, and the 3rd pin of NAND gate U1A connects the base stage of triode Q2 through resistance R 3; The collector electrode of triode Q2 connects by protective circuit, the grounded emitter of triode Q2.
As shown in Figure 1, the 6th pin of described NAND gate U1B connects the parallel circuits that is composed in parallel by capacitor C 2, charging capacitor C1 and resistance R 4 threes, and the positive pole of charging capacitor C1 links to each other the minus earth of charging capacitor C1 with the 6th pin of NAND gate U1B.The 4th pin of described NAND gate U1B connects the base stage of triode Q1 through resistance R 2, and the collector electrode of triode Q1 connects+the 12V direct current, and the emitter of triode Q1 is through resistance R 4 ground connection.
When by the output of protective circuit test point just often, 2 pin of NAND gate U1A are high level, and the 4 pin voltages of NAND gate U1B are high level when operate as normal always; Then 1 pin of NAND gate U1A also is a high level, simultaneously, because triode Q1 conducting; Therefore, 6 pin of NAND gate U1B also are high level.Because 1,2 pin of NAND gate U1A are high level, the 3 pin output low levels of NAND gate U1A, triode Q2 ends, and transistor collector end T2 is a high level, by the subsequent conditioning circuit operate as normal of protective circuit.
When by the output overvoltage of protective circuit test point or overcurrent, 2 pin of NAND gate U1A are low level, and then 3 pin of NAND gate U1A are high level; Triode Q2 conducting; The voltage of transistor collector end T2 is dragged down, and is not worked by the subsequent conditioning circuit of protective circuit, and protection starts.At this moment, 5 pin of NAND gate U1B are high level; Before overcurrent or overvoltage took place, 6 pin of NAND gate U1B were high level, and gave charging capacitor C1 charging; Then 4 pin of NAND gate U1B are low level; 1 pin of NAND gate U1A is a low level, and triode Q1 ends, and charging capacitor C1 begins discharge; 6 pin of NAND gate U1B become low level, and then 4 pin of NAND gate U1B become high level.If by the output of protective circuit test point overvoltage always, then the present invention can be in guard mode always.When by the output of protective circuit test point between normal and overvoltage the time, the present invention will be in protection---and repeat under the state do not protected, present the phenomenon of having the hiccups.Through changing the value of charging capacitor C1, can change the guard time of circuit.
Fig. 2 and shown in Figure 3 being respectively when charging capacitor C1=1uF and charging capacitor C1=0.1uF, output of the present invention is the voltage condition of transistor collector end T2 just, can be found out by two figure, and when overvoltage or overcurrent, there is the phenomenon of having the hiccups in circuit.Guard time among Fig. 2 is 1s nearly, and the guard time among Fig. 3 is 0.2s.It is thus clear that the value that changes charging capacitor C1 can change guard time, the value of charging capacitor C1 is big more, and guard time is just long more.

Claims (4)

1. the formula of having the hiccups over-voltage over-current protection circuit that duration can be set; It is characterized in that: comprise first NAND gate; Its input be used for being linked to each other of output voltage signal by the protective circuit test point, its output links to each other with the input of second NAND gate, the input termination charging capacitor C1 of second NAND gate; The output of second NAND gate links to each other with the input of first NAND gate, and the output of first NAND gate connects by the subsequent conditioning circuit of protective circuit through switching tube Q2.
2. the formula of the having the hiccups over-voltage over-current protection circuit that duration is set according to claim 1; It is characterized in that: described first NAND gate is NAND gate U1A, and described second NAND gate is NAND gate U1B, and described switching tube Q2 is triode Q2; The 2nd pin of NAND gate U1A links to each other with the test point that is used for the output voltage signal; The 1st pin of NAND gate U1A links to each other with the 4th pin of NAND gate U1B, and the 3rd pin of NAND gate U1A links to each other with the 5th pin of NAND gate U1B through resistance R 1, and the 3rd pin of NAND gate U1A connects the base stage of triode Q2 through resistance R 3; The collector electrode of triode Q2 connects by protective circuit, the grounded emitter of triode Q2.
3. the formula of the having the hiccups over-voltage over-current protection circuit that duration is set according to claim 1; It is characterized in that: the 6th pin of described NAND gate U1B connects the parallel circuits that is composed in parallel by capacitor C 2, charging capacitor C1 and resistance R 4 threes; The positive pole of charging capacitor C1 links to each other the minus earth of charging capacitor C1 with the 6th pin of NAND gate U1B.
4. the formula of the having the hiccups over-voltage over-current protection circuit that duration is set according to claim 3; It is characterized in that: the 4th pin of described NAND gate U1B connects the base stage of triode Q1 through resistance R 2; The collector electrode of triode Q1 connects+the 12V direct current, and the emitter of triode Q1 is through resistance R 4 ground connection.
CN2012102387931A 2012-07-11 2012-07-11 Hiccup type overvoltage and overcurrent protecting circuit capable of setting time length Pending CN102780389A (en)

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CN2012102387931A CN102780389A (en) 2012-07-11 2012-07-11 Hiccup type overvoltage and overcurrent protecting circuit capable of setting time length

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104377950A (en) * 2014-11-05 2015-02-25 深圳市汇川技术股份有限公司 Starting circuit of power supply control chip
CN105180668A (en) * 2015-10-10 2015-12-23 成都申川节能环保工程有限公司 Low-pass filter type waste heat power generation energy-saving control system based on overvoltage and overcurrent protection
CN105177205A (en) * 2015-10-10 2015-12-23 成都申川节能环保工程有限公司 Trilinear drive type waste heat power generation energy-saving control system based on overvoltage and overcurrent protection
CN105177204A (en) * 2015-10-10 2015-12-23 成都申川节能环保工程有限公司 Blast furnace superconduction cooling waste heat power generation energy-saving control system based on overvoltage and overcurrent protection
CN106786400A (en) * 2016-11-11 2017-05-31 深圳市航天新源科技有限公司 Overcurrent protection and anti-latch circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201408985Y (en) * 2009-04-17 2010-02-17 中兴通讯股份有限公司 Short-circuit protection circuit for switching power supply
CN101854050A (en) * 2009-04-03 2010-10-06 英业达股份有限公司 Over-voltage protection device
CN202679234U (en) * 2012-07-11 2013-01-16 合肥华耀电子工业有限公司 Hiccup type over-voltage and over-current protection circuit capable of setting time

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101854050A (en) * 2009-04-03 2010-10-06 英业达股份有限公司 Over-voltage protection device
CN201408985Y (en) * 2009-04-17 2010-02-17 中兴通讯股份有限公司 Short-circuit protection circuit for switching power supply
CN202679234U (en) * 2012-07-11 2013-01-16 合肥华耀电子工业有限公司 Hiccup type over-voltage and over-current protection circuit capable of setting time

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104377950A (en) * 2014-11-05 2015-02-25 深圳市汇川技术股份有限公司 Starting circuit of power supply control chip
CN104377950B (en) * 2014-11-05 2017-02-15 深圳市汇川技术股份有限公司 Starting circuit of power supply control chip
CN105180668A (en) * 2015-10-10 2015-12-23 成都申川节能环保工程有限公司 Low-pass filter type waste heat power generation energy-saving control system based on overvoltage and overcurrent protection
CN105177205A (en) * 2015-10-10 2015-12-23 成都申川节能环保工程有限公司 Trilinear drive type waste heat power generation energy-saving control system based on overvoltage and overcurrent protection
CN105177204A (en) * 2015-10-10 2015-12-23 成都申川节能环保工程有限公司 Blast furnace superconduction cooling waste heat power generation energy-saving control system based on overvoltage and overcurrent protection
CN106786400A (en) * 2016-11-11 2017-05-31 深圳市航天新源科技有限公司 Overcurrent protection and anti-latch circuit
CN106786400B (en) * 2016-11-11 2018-02-16 深圳市航天新源科技有限公司 Overcurrent protection and anti-latch circuit

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Application publication date: 20121114