CN102773804A - CMP slurry mix and delivery system - Google Patents
CMP slurry mix and delivery system Download PDFInfo
- Publication number
- CN102773804A CN102773804A CN2011101700727A CN201110170072A CN102773804A CN 102773804 A CN102773804 A CN 102773804A CN 2011101700727 A CN2011101700727 A CN 2011101700727A CN 201110170072 A CN201110170072 A CN 201110170072A CN 102773804 A CN102773804 A CN 102773804A
- Authority
- CN
- China
- Prior art keywords
- polishing
- fluid
- polishing fluid
- mixes
- induction system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
A CMP slurry mix and delivery system includes at least one container for holding a polishing agent; a pump connected to the container for pumping the polishing agent to a point of use; and a slurry dispersion unit installed between the pump and the point of use, wherein slurry dispersion unit provides megasonic energy that is capable of dispersing the polishing agent flowing through the slurry dispersion unit.
Description
Technical field
The present invention relates to chemically mechanical polishing or planarization field, particularly relate to a kind of polishing fluid that is used in chemical-mechanical polisher and mix and induction system.
Background technology
In semi-conductor industry, in order to obtain the smooth wafer of apparent height, chemically mechanical polishing and chemical-mechanical planarization technology are indispensable roles.In chemical mechanical polishing processing program, wafer can be crushed on the polishing pad of rotation usually, and this wafer can be in rotation of the surface of polishing pad and swing, in order to promote the efficient of polishing.In the process of chemically mechanical polishing, a liquid polishing fluid can side by side be provided, in order to promote the efficient of polishing.
Usually, liquid polishing fluid can be via a pipe-line system, is delivered to the nozzle or the sprinkler of use side by the polishing fluid accumulator tank, and through nozzle or sprinkler, this polishing fluid can be provided to the surface of polishing pad, makes polished of polishing fluid and wafer directly to contact.In addition, polishing fluid also can pass through feed system, is delivered directly to the surface of polishing pad via the Lower Half of polishing pad.Liquid polishing fluid can comprise polishing particles, reactive chemical reagent, like transition metal misfit thing salt or an oxidant and an assistant, like solvent, cushioning liquid or stable reagent.
At present, the chemical mechanical polishing processing program problem that often will run into is the polishing fluid agglomeration of particles.In the process of polishing, the polishing particles of oversized dimensions or aggregation can cause the surface micro wearing and tearing of wafer or the injury that produces other.Therefore; There is the polishing fluid that a kind of improved need be provided in chemical mechanical polishing apparatus to mix and induction system; Particle in order to avoid the polishing fluid particle aggregation or will produce gathering disperses fully, makes the particle degree of scatter that the maintenance of polishing fluid in induction system is good.
Summary of the invention
The present invention seeks in chemical mechanical polishing apparatus, to provide the polishing fluid of an improved to mix and induction system, be used to solve the problem of above-mentioned polishing fluid particle aggregation.
The polishing fluid of chemically mechanical polishing of the present invention mixes and induction system; Comprise at least one container, be used to hold a polishing agent, a pumping, be connected to said container; Be used for said polishing agent is delivered to a use side and a polishing fluid dispersal unit; Be arranged between said pumping and the said use side, said polishing fluid dispersal unit provides ultrasonic wave, and the said polishing agent of the said polishing fluid dispersal unit of flowing through is disperseed.
According to the present invention, the polishing fluid dispersal unit comprises a ultrasonic bath, in said ultrasonic bath, fills up a fluid, a helix tube, and said helix tube is arranged in the said ultrasonic bath, and is immersed in the said fluid in the said ultrasonic bath.One polishing agent flows in said helix tube.The number of turns of said helix tube stays in the holdup time of said ultrasonic bath by the said polishing agent of the said helix tube of flowing through and determines.Said polishing fluid dispersal unit comprises a converter, with the said polishing agent coupling of the said fluid in the said ultrasonic bath and the said helix tube of flowing through.
Description of drawings
Fig. 1 is that the polishing fluid of the preferred embodiment of the present invention one chemically mechanical polishing mixes and the induction system sketch map.
Fig. 2 is the preferred embodiment of the present invention one a ultrasonic bath perspective view.
Fig. 3 is the preferred embodiment of the present invention one a chemically mechanical polishing unit section sketch map.
Wherein, description of reference numerals is following:
The polishing fluid of 10 chemically mechanical polishings mixes and 12 first containers
Induction system
14 second containers, 20 polishing fluid dispersal unit
30 chemically mechanical polishing unit, 101 connecting ducts
102 connecting ducts, 103 connecting ducts
104 connecting ducts, 105 main polishing fluid connecting ducts
106 connecting ducts, 201 ultrasonic bath
202 fluids, 205 input adapters
210 helix tubes, 206 out splice going splices
230 converters, 240 heaters
301 rotating shafts of 300 polished land
310 polishing pads, 320 rubbing heads
322 wafers, 330 polishing fluid feeding mechanisms
The S1 first polishing agent S2 second polishing agent
S3 mixed polishing solution S4 polishing fluid
The P1 first pumping P2 second pumping
The specific embodiment
Fig. 1 is that the polishing fluid of the chemically mechanical polishing of the preferred embodiment of the present invention mixes and induction system.The polishing fluid of chemically mechanical polishing mixes and induction system 10 comprises a plurality of containers 12,14, and each a plurality of container 12,14 can respectively hold a fluid composition, and said each fluid composition can be by in polishing fluid.For example, two containers 12,14 among Fig. 1 are respectively applied for the polishing fluid that provides two liquid to mix pattern, and certainly, the number of container can be done to increase or reduce according to the composition of polishing fluid.For instance, if polishing fluid is a premixed type, only need a container this moment.
According to a preferred embodiment of the invention, one first container 12 is used to hold one first polishing agent S1, and it is connected with one first Pu pump P1 through a connecting duct 101.One second container 14 is used to hold the second polishing agent S2, and it is connected with one second Pu pump P2 through a connecting duct 102.The first polishing agent S1 is delivered to main polishing fluid conduit 105 via connecting duct 103 is pressurized, and mixes mutually with the second polishing agent S2, and the second polishing agent S2 is via connecting duct 104, by the second Pu pump P2 pressurized delivered.The mixed polishing solution S3 polishing fluid dispersal unit 20 of can flowing through, and in polishing fluid dispersal unit 20, be evenly dispersed.Disperse polishing fluid S4 via connecting duct 106 the pressurized chemically mechanical polishing unit 30 that is delivered to, and said polishing fluid can pass through polishing fluid feeding mechanism 330 and be sprayed at the surface of polishing pad.
" polishing agent " here describing can comprise one or more fluid compositions, and this fluid composition can be used in chemically mechanical polishing or other polishing wafer treatment system.Wherein polishing agent can comprise polishing fluid, buffer, reach cleaning agent, but is not limited thereto.Polishing agent can comprise one or more compositions.
Fig. 2 is that the polishing fluid of the chemically mechanical polishing of one embodiment of the present invention mixes and the perspective view of the polishing fluid dispersal unit of induction system.Polishing fluid dispersal unit 20 comprises a ultrasonic bath 201, in ultrasonic bath 201, fills up a fluid 202, like water or pure water.One helix tube 210 is set in the ultrasonic bath 201, and is immersed in the fluid 202 in the ultrasonic bath 201.The polishing fluid S3 that the mixes helix tube 210 of flowing through does not directly contact with fluid 202.The number of turns of helix tube 210 is to determine the holdup time that the mixed polishing solution S3 through the helix tube of flowing through stays in ultrasonic bath 201.One end of helix tube 210 combines with a sidewall of ultrasonic bath 201 via input adapter 205 (inlet joint); Input adapter 205 can be connected with main polishing fluid connecting duct 105; And the other end of helix tube 210 is connected in relative another sidewall of ultrasonic bath 201 via out splice going splice 206, and this out splice going splice 206 can be connected with connecting duct 106.Helix tube 210 can be by plastics, as polyvinyl chloride (polyvinyl chloride, PVC), metal, such as copper, silicones or other material that is fit to formation.
According to a preferred embodiment of the invention, be provided with a converter 230 in the ultrasonic bath 201, the fluid 202 in converter 230 and the ultrasonic bath 201 and the polishing fluid coupling of the helix tube 210 of flowing through.For instance, therefore converter 230 can produce pressure oscillations in the frequency vibrations of 1 MHz nearly in ultrasonic bath 201, and so effectively dispersion train is through the polishing fluid of helix tube 210.One heater 240 like thermocouple, optionally is arranged in the ultrasonic bath 201, the temperature that is used to change the temperature of fluid 202 and changes the polishing fluid of the helix tube 210 of flowing through.Converter 230 and heater 240 can be connected with a controller (figure does not show).The particle of assembling in the said polishing fluid can be disperseed through ultrasonic energy that polishing fluid dispersal unit 20 provided effectively.
The polishing fluid S4 of above-mentioned dispersion can the pressurized use side that is delivered to, for instance, and a chemically mechanical polishing unit 30, and be sprayed to the surface of polishing pad 310 via polishing fluid feeding mechanism 330.Shown in the 3rd figure, chemically mechanical polishing unit 30 can comprise that one is connected in the polished land 300 of rotating shaft 301, and in the process of polishing, polished land 300 can be around the axle center rotation of rotating shaft 301.One polishing pad 310 is located on the polished land 300.One rubbing head 320 is used for fixing and rotates a wafer 322.In the process of polishing, a polishing fluid feeding mechanism 330 can receive and disperse polishing fluid S4 and spray this dispersion polishing fluid S4 in the surface of polishing pad 310.Rubbing head 320 can press against the wafer 322 of rotation; Wafer 322 is contacted with polishing pad 310; In the process of polishing, meeting of the surface of polishing pad 310 and wafer 322 produce relative motion and frictions, and above-mentioned relative motion meeting produces machinery and chemical polishing action power to wafer 322 surfaces.
According to another preferred embodiment of the invention, the first polishing agent S1 and the second polishing agent S1 can be under the effects of ultrasonic energy, in ultrasonic bath 201, directly mix and disperse.Wherein, can omit fluid 202 and helix tube 210.And ultrasonic bath 201 can be sealed or closed.One pumping (figure does not show) can be set in addition in connecting duct 106, be used to be controlled at the flow velocity of the polishing fluid S4 in the connecting duct.
The above is merely the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (10)
1. the polishing fluid of a chemically mechanical polishing mixes and induction system, it is characterized in that comprising:
At least one container is used to hold a polishing fluid;
One pumping is connected to said container, and said polishing fluid is delivered to use side; And
One polishing fluid dispersal unit is arranged between said pumping and said use side, and wherein, said polishing fluid dispersal unit provides ultrasonic wave, and the said polishing fluid of the said polishing fluid dispersal unit of flowing through is disperseed.
2. the polishing fluid of chemically mechanical polishing according to claim 1 mixes and induction system, it is characterized in that said polishing fluid dispersal unit comprises ultrasonic bath, wherein, fills up fluid in the described ultrasonic bath.
3. the polishing fluid of chemically mechanical polishing according to claim 2 mixes and induction system, it is characterized in that described fluid does not directly contact described polishing fluid.
4. the polishing fluid of chemically mechanical polishing according to claim 2 mixes and induction system, it is characterized in that described fluid comprises water.
5. the polishing fluid of chemically mechanical polishing according to claim 4 mixes and induction system, it is characterized in that said fluid is a pure water.
6. the polishing fluid of chemically mechanical polishing according to claim 2 mixes and induction system, it is characterized in that described polishing fluid dispersal unit comprises helix tube in addition, is immersed in the described fluid, and wherein, described polishing fluid flows in described helix tube.
7. the polishing fluid of chemically mechanical polishing according to claim 6 mixes and induction system, it is characterized in that described helix tube comprises plastics, metal or silicones.
8. the polishing fluid of chemically mechanical polishing according to claim 6 mixes and induction system, and the number of turns that it is characterized in that said helix tube is to determine the holdup time that the said polishing fluid through the said helix tube of flowing through stays in said ultrasonic bath.
9. the polishing fluid of chemically mechanical polishing according to claim 6 mixes and induction system; It is characterized in that said polishing fluid dispersal unit comprises converter, the said polishing fluid coupling of the said fluid in said converter and the said ultrasonic bath and the said helix tube of flowing through.
10. the polishing fluid of chemically mechanical polishing according to claim 6 mixes and induction system; It is characterized in that said polishing fluid dispersal unit also comprises heater; Change the temperature of said fluid and change the temperature of the said polishing fluid of the said helix tube of flowing through through said heater.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/106,861 US20120289134A1 (en) | 2011-05-13 | 2011-05-13 | Cmp slurry mix and delivery system |
| US13/106,861 | 2011-05-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102773804A true CN102773804A (en) | 2012-11-14 |
Family
ID=47119026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101700727A Pending CN102773804A (en) | 2011-05-13 | 2011-06-21 | CMP slurry mix and delivery system |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20120289134A1 (en) |
| CN (1) | CN102773804A (en) |
| TW (1) | TW201244874A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107426959A (en) * | 2015-02-02 | 2017-12-01 | Bkr知识产权控股有限公司 | The continuous ultrasound processing of seed |
| CN112677032A (en) * | 2019-10-17 | 2021-04-20 | 夏泰鑫半导体(青岛)有限公司 | Grinding fluid conveying module and chemical mechanical grinding device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0319806A1 (en) * | 1987-11-28 | 1989-06-14 | Kabushiki Kaisha Toshiba | Semiconductor wafer surface treatment method |
| CN1127426A (en) * | 1994-10-24 | 1996-07-24 | 摩托罗拉公司 | Chemical-mechanical polisher and a process for polishing |
| US6257955B1 (en) * | 1997-08-29 | 2001-07-10 | Infineon Technologies Ag | Apparatus and method for heating a liquid or viscous polishing agent, and device for polishing wafers |
| US20040134514A1 (en) * | 2003-01-10 | 2004-07-15 | Yi Wu | Megasonic cleaning system with buffered cavitation method |
| US20060026906A1 (en) * | 2004-07-21 | 2006-02-09 | Stark David A | Versatile system for conditioning slurry in CMP process |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2702692A (en) * | 1951-11-24 | 1955-02-22 | Gen Electric | Apparatus utilizing ultrasonic compressional waves |
| US3500591A (en) * | 1966-11-21 | 1970-03-17 | Owens Illinois Inc | Glass grinding method and apparatus |
| US5593339A (en) * | 1993-08-12 | 1997-01-14 | Church & Dwight Co., Inc. | Slurry cleaning process |
| JP3508979B2 (en) * | 1997-06-30 | 2004-03-22 | ソニー株式会社 | Powder beam processing apparatus and powder beam processing method |
| KR100302482B1 (en) * | 1998-06-23 | 2001-11-30 | 윤종용 | Slurry Supply System of Semiconductor CMP Process |
| JP2000198062A (en) * | 1998-11-04 | 2000-07-18 | Canon Inc | Polishing device and its method |
| JP3538042B2 (en) * | 1998-11-24 | 2004-06-14 | 松下電器産業株式会社 | Slurry supply device and slurry supply method |
| US6053802A (en) * | 1999-06-03 | 2000-04-25 | Promos Technologies, Inc. | Stabilization of slurry used in chemical mechanical polishing of semiconductor wafers by megasonic pulse |
| US6314974B1 (en) * | 1999-06-28 | 2001-11-13 | Fairchild Semiconductor Corporation | Potted transducer array with matching network in a multiple pass configuration |
| US6695685B2 (en) * | 2001-10-12 | 2004-02-24 | Cae Alpheus, Inc. | Low flow rate nozzle system for dry ice blasting |
| TW574086B (en) * | 2001-11-27 | 2004-02-01 | Nanya Technology Corp | On-pipe vibrator |
| US6702655B2 (en) * | 2002-07-05 | 2004-03-09 | Taiwan Semiconductor Manufacturing Co., Ltd | Slurry delivery system for chemical mechanical polisher |
| US7189146B2 (en) * | 2003-03-27 | 2007-03-13 | Asm Nutool, Inc. | Method for reduction of defects in wet processed layers |
-
2011
- 2011-05-13 US US13/106,861 patent/US20120289134A1/en not_active Abandoned
- 2011-06-20 TW TW100121449A patent/TW201244874A/en unknown
- 2011-06-21 CN CN2011101700727A patent/CN102773804A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0319806A1 (en) * | 1987-11-28 | 1989-06-14 | Kabushiki Kaisha Toshiba | Semiconductor wafer surface treatment method |
| CN1127426A (en) * | 1994-10-24 | 1996-07-24 | 摩托罗拉公司 | Chemical-mechanical polisher and a process for polishing |
| US6257955B1 (en) * | 1997-08-29 | 2001-07-10 | Infineon Technologies Ag | Apparatus and method for heating a liquid or viscous polishing agent, and device for polishing wafers |
| US20040134514A1 (en) * | 2003-01-10 | 2004-07-15 | Yi Wu | Megasonic cleaning system with buffered cavitation method |
| US20060026906A1 (en) * | 2004-07-21 | 2006-02-09 | Stark David A | Versatile system for conditioning slurry in CMP process |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107426959A (en) * | 2015-02-02 | 2017-12-01 | Bkr知识产权控股有限公司 | The continuous ultrasound processing of seed |
| CN112677032A (en) * | 2019-10-17 | 2021-04-20 | 夏泰鑫半导体(青岛)有限公司 | Grinding fluid conveying module and chemical mechanical grinding device |
Also Published As
| Publication number | Publication date |
|---|---|
| US20120289134A1 (en) | 2012-11-15 |
| TW201244874A (en) | 2012-11-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121114 |