CN102769400B - Single-phase half-bridge three-level inverter circuit and three-level inverter - Google Patents
Single-phase half-bridge three-level inverter circuit and three-level inverter Download PDFInfo
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- CN102769400B CN102769400B CN201210224210.XA CN201210224210A CN102769400B CN 102769400 B CN102769400 B CN 102769400B CN 201210224210 A CN201210224210 A CN 201210224210A CN 102769400 B CN102769400 B CN 102769400B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/487—Neutral point clamped inverters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0095—Hybrid converter topologies, e.g. NPC mixed with flying capacitor, thyristor converter mixed with MMC or charge pump mixed with buck
Abstract
The embodiment of the invention discloses a single-phase half-bridge three-level inverter circuit. The circuit comprises a first DC input terminal, a middle point level terminal, a second DC input terminal, switch devices from first to sixth, and diodes from fifth to twelfth, wherein the switch devices from the first to the fourth are sequentially connected in series between the first DC input terminal and the second DC input terminal; the fifth switch device is connected with the middle point level terminal through the ninth diode; the sixth switch device is connected with the middle point level terminal through the twelfth diode; a flow choking element is connected between the public end of the second and the third switch devices and the public end of the fifth and the sixth switch devices; and the public end of the fifth and the sixth switch devices is connected with the public end of the seventh and the eighth diodes. The embodiment of the invention further provides a three-level inverter. According to the invention, in the field requiring both a unity power factor and a non-unit power factor, the switch device selection range is large, in addition, the consumption of the switch devices is reduced and the service life of the switch device is prolonged; and the overall conversion efficiency is improved.
Description
Technical field
The invention belongs to field of power electronics, be specifically related to a kind of single-phase semi-bridge three-level inverter circuit and comprise the three-level converter of this circuit.
Background technology
As shown in Figure 1, T1, T2, T3, T4 are switching device to traditional I font tri-level circuit, and D1, D2, D3, D4 are respectively the anti-paralleled diode of T1, T2, T3, T4, and D1, D2, D3, D4 are the body diode of switching device.As shown in Figure 2, in Fig. 2 a, electric current exports A through T1, T2 to interchange from M end to mode when I font tri-level circuit is operated in unity power factor; In Fig. 2 b, electric current exports A through T1, T2 to interchange from O end; In Fig. 2 c, electric current exports A from interchange and holds through T3, T4 to N; In Fig. 2 d, electric current exports A from interchange and holds through T3, D6 to O.As shown in Figure 3, in Fig. 3 a, electric current exports A from interchange and holds through T3, D6 to O mode when I font tri-level circuit is operated in non-unity power factor; In Fig. 3 b, electric current exports A from interchange and holds through D2, D1 to M; In Fig. 3 c, electric current exports A through D5, T2 to interchange from N end; In Fig. 3 d, electric current exports A through D4, D3 to interchange from O end.
The drive singal of each switching tube that above mode is corresponding as shown in Figure 4.At the first half cycle of alternating voltage, the drive singal of T1 and T3 is high frequency and complementary, T2 conducting, and T4 turns off; At the first half cycle of alternating voltage, the drive singal of T2 and T4 is high frequency and complementary, T3 conducting, and T1 turns off.
As can be seen from above-mentioned operational modal analysis and each switching tube drive singal, when I font tri-level circuit is operated in unity power factor, T2 and T3 is operated in power frequency state, and when I font tri-level circuit is operated in non-unity power factor, T2 and T3 is operated in high frequency state.Therefore, need the occasion of unity power factor and the application of non-unity power factor at the same time, there is following technical problem: during (1) selection T2 and T3, need switch performance and the conduction property of taking into account consideration device, under current semiconductor technology, can only to compromise during selection consideration, to cause in unity power factor work limitation rate not high; (2) because T2 and T3 will participate in work when unity power factor and non-unity power factor, loss is comparatively large, is unfavorable for heat radiation, decreases the useful life of device, reduce the conversion efficiency of circuit; (3) reactive current needs body diode D1, D2, D3, the D4 by T1, T2, T3, T4, and loss is comparatively large, is also unfavorable for that device dispels the heat, and decreases device useful life, limits the raising of switching frequency, also reduce the conversion efficiency of circuit.
Summary of the invention
In view of this, the object of the present invention is to provide the single-phase semi-bridge three-level inverter circuit solved the problems of the technologies described above and the three-level converter comprising this circuit, when needing the occasion of unity power factor and the application of non-unity power factor at the same time, switching device range of choice is large, and switching device loss can be reduced, extend the useful life of switching device, and improve overall transformation efficiency.
The invention provides a kind of single-phase semi-bridge three-level inverter circuit, a kind of single-phase semi-bridge three-level inverter circuit, it is characterized in that: comprise the first direct-flow input end, mid point level end, the second direct-flow input end, the first switching device, second switch device, the 3rd switching device, the 4th switching device, the 5th switching device and the 6th switching device, and the 5th diode, the 6th diode, the 7th diode, the 8th diode, the 9th diode, the tenth diode; The first end of the first switching device and the second termination first direct-flow input end of the 7th diode, the second end of the 4th switching device and the first termination second direct-flow input end of the 8th diode; The first end of the first end of the 5th diode, the second end of the 6th diode, the 9th diode, the second end of the tenth diode connect described mid point level end after being connected, second end of the second termination first switching device of the 5th diode and the first end of second switch device, second end of the first termination the 3rd switching device of the 6th diode and the first end of the 4th switching device; Second end of the first termination the 9th diode of the 5th switching device, the second termination the tenth diode of the 6th switching device first end; Second end of the 5th switching device is connected with the first end of the 6th switching device, and its tie point connects the first end of the 7th diode and the second end of the 8th diode; Second end of second switch device is connected with the first end of the 3rd switching device, is connected with flow blocking element between the second end of its tie point and the 5th switching device; First switching device, second switch device, the 3rd switching device, the 4th switching device, the 5th switching device, the 6th switching device respectively reverse parallel connection have the first diode, the second diode, the 3rd diode, the 4th diode, the 11 diode and the 12 diode; The tie point of the second end of the 5th switching device and the first end of the 6th switching device is as ac output end.
Further, in above-mentioned single-phase semi-bridge three-level inverter circuit, first switching device, the 4th switching device are mos field effect transistor, and second switch device, the 3rd switching device, the 5th switching device, the 6th switching device are igbt.
Further, in above-mentioned single-phase semi-bridge three-level inverter circuit, described flow blocking element is inductance.
Further, above-mentioned single-phase semi-bridge three-level inverter circuit has eight kinds of operation modes, is respectively: the first operation mode: electric current through the first direct-flow input end, the first switching device, second switch device, flow blocking element to ac output end; Second operation mode: electric current through mid point level end, the 5th diode, second switch device, flow blocking element to ac output end; 3rd operation mode: electric current is through ac output end, flow blocking element, the 3rd switching device, the 4th switching device to the second direct-flow input end; 4th operation mode: electric current through ac output end, flow blocking element, the 3rd switching device, the 6th diode to mid point level end; 5th operation mode: electric current through ac output end, the 6th switching device, the tenth diode to mid point level end; 6th operation mode: electric current is through ac output end, the 7th diode to the first direct-flow input end; 7th operation mode: electric current through mid point level end, the 9th diode, the 5th switching device to ac output end; 8th operation mode: electric current through the second direct-flow input end, the 8th diode to ac output end.
Further, above-mentioned single-phase semi-bridge three-level inverter circuit is provided with the first Switching Condition and second switch condition, under the first Switching Condition, first switching device and the 6th switching device are with the high-frequency pulse signal trigger action of complementation, second switch break-over of device, the 3rd, the 4th, the 5th switching device turns off; Under second switch condition, first, second, the 6th switching device turn off, the 3rd switch device conductive, the 4th switching device and the 5th switching device are with the high-frequency pulse signal trigger action of complementation.
Further, in above-mentioned single-phase semi-bridge three-level inverter circuit, the high-frequency pulse signal of described first switching device under the first Switching Condition is identical with the high-frequency pulse signal of the 4th switching device under second switch condition; The high-frequency pulse signal of 5th switching device under second switch condition is identical with the high-frequency pulse signal of the 6th switching device under the first Switching Condition.
Further, above-mentioned high-frequency pulse signal is pwm signal.
Present invention also offers a kind of three-level converter, comprise the single-phase semi-bridge three-level inverter circuit that at least one is above-mentioned, first direct-flow input end of described single-phase semi-bridge three-level inverter circuit all connects the positive pole of DC power supply, second direct-flow input end all connects the negative pole of DC power supply, and mid point level end all connects the midpoint potential end of DC power supply.
Further, above-mentioned three-level converter also comprises the positive pole that is connected to DC power supply with between midpoint potential end and be connected to the identical electric capacity of parameter between midpoint potential end and the negative pole of DC power supply.
Further, filter circuit is connected with between the ac output end of described each single-phase semi-bridge three-level inverter circuit and AC load or electrical network.
Beneficial effect of the present invention is: by constructing the idle branch road be made up of the 5th switching device, the 6th switching device, the 7th diode, the 8th diode, the 9th diode, the tenth diode in conventional tri-level circuit, path of gaining merit is separated with idle path, the range of choice of switching device is large, reduce the switching loss of circuit and conduction loss and be conducive to device heat radiation, extend the useful life of device, improve the overall transformation efficiency of circuit; 7th diode, the 8th diode, the 9th diode, the tenth diode are independently diode, and reverse recovery characteristic is better than diode in body, and circuit can adopt higher switching frequency, are also conducive to the conversion efficiency improving circuit.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of prior art;
Fig. 2 a-2d is the current direction schematic diagram of circuit working shown in Fig. 1 when the unity power factor;
Fig. 3 a-3d is the current direction schematic diagram of circuit working shown in Fig. 1 when the non-unity power factor;
Fig. 4 is the drive singal figure of the breaker in middle of circuit shown in Fig. 1 device;
Fig. 5 is the schematic diagram of single-phase semi-bridge three-level inverter circuit module;
Fig. 6 is a kind of circuit diagram of the first embodiment of three-level converter;
Fig. 7 a-7d is the current direction schematic diagram of single-phase semi-bridge three-level inverter circuit when working in unity power factor;
Fig. 8 a-8d is the current direction schematic diagram of single-phase semi-bridge three-level inverter circuit when working in non-unity power factor;
Fig. 9 is the drive singal schematic diagram of single-phase semi-bridge three-level inverter circuit breaker in middle device;
Figure 10 is the another kind of circuit diagram of the first embodiment of three-level converter;
Figure 11 is the circuit diagram of the second embodiment of three-level converter;
Figure 12 is the circuit diagram of the 3rd embodiment of three-level converter.
First direct-flow input end M1 mid point level end O second direct-flow input end N1
First switching device RT1 second switch device R T2 the 3rd switching device RT3
4th switching device RT4 the 5th switching device RT11 the 6th switching device RT22
5th diode RD5 the 6th diode RD6 ac output end AC
7th diode RD7 the 8th diode RD8 the 9th diode RD9
Tenth diode RD10 the 11 diode RD11 the 12 diode RD22
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, and below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
With reference to Fig. 5, the circuit diagram of single-phase semi-bridge three-level inverter circuit disclosed in the embodiment of the present invention.Described single-phase semi-bridge three-level inverter circuit comprises the first direct-flow input end M1, mid point level end O, second direct-flow input end N1, be connected on the first switching device RT1 between the first direct-flow input end M1 and the second direct-flow input end N1 successively, second switch device R T2, 3rd switching device RT3 and the 4th switching device RT4, the 5th switching device RT11 be connected in series and the 6th switching device RT22, with the 5th diode RD5 be connected in series and the 6th diode RD6, with the 9th diode RD9 be connected in series and the tenth diode RD10, and the 7th diode RD7 be connected in series and the 8th diode RD8.
Wherein, second end of the first end of the first switching device RT1 and the second termination first direct-flow input end M1 of the 7th diode RD7, the 4th switching device RT4 and the first termination second direct-flow input end N1 of the 8th diode RD8; The first end of the first end of the 5th diode RD5, second end of the 6th diode RD6, the 9th diode, the second end of the tenth diode meet described mid point level end O after being connected, second end of the second termination first switching device RT1 of the 5th diode RD5 and the first end of second switch device R T2, second end of the first termination the 3rd switching device RT3 of the 6th diode RD6 and the first end of the 4th switching device RT4; Second end of the first termination the 9th diode RD9 of the 5th switching device RT11, the first end of the second termination the tenth diode RD10 of the 6th switching device RT22; Second end of the 5th switching device RT11 is connected with the first end of the 6th switching device RT22, and its tie point connects the first end of the 7th diode RT7 and second end of the 8th diode RT8; Second end of second switch device R T2 is connected with the first end of the 3rd switching device RT3, is connected with flow blocking element LR1 between second end of its tie point and the 5th switching device RT11; First switching device RT1, second switch device R T2, the 3rd switching device RT3, the 4th switching device RT4, the 5th switching device RT11, the 6th switching device RT22 respectively reverse parallel connection have the first diode RD1, the second diode RD2, the 3rd diode RD3, the 4th diode RD4, the 11 diode RD11 and the 12 diode RD12; The tie point of second end of the 5th switching device RT11 and the first end of the 6th switching device RT22 is as ac output end.
The single-phase semi-bridge three-level inverter circuit accessible site of Fig. 5 is chip, the first end of the first switching device RT1 is as the first direct-flow input end M1, second end of the 4th switching device RT4 is as the second direct-flow input end N1, and the common port of the 5th diode RD5 and the 6th diode RD6 is as mid point level end O.
It should be noted that, anti-parallel diodes RD1, RD2, RD3, RD4, RD11, RD12 of first switching device RT1, second switch device R T2, the 3rd switching device RT3, the 4th switching device RT4, the 5th switching device RT11, the 6th switching device RT22 can be the diodes that switching device carries, and also can be independently diodes.
Compared with prior art, the embodiment of the present invention by constructing the idle branch road be made up of the 5th switching device RT11, the 6th switching device RT22, the 7th diode RD7, the 8th diode RD8, the 9th diode RD9, the tenth diode RD10 in conventional tri-level circuit, path of gaining merit is separated with idle path, the range of choice of switching device is large, reduce the switching loss of circuit and conduction loss and be conducive to device heat radiation, extend the useful life of device, improve the overall transformation efficiency of circuit; 7th diode RD7, the 8th diode RD8, the 9th diode RD9, the tenth diode RD10 are independently diode, and reverse recovery characteristic is better than diode in body, and circuit can adopt higher switching frequency, are also conducive to the conversion efficiency improving circuit.
In above-mentioned single-phase semi-bridge three-level inverter circuit, first switching device RT1, the 4th switching device RT4 are mos field effect transistor (MOFET), second switch device R T2, the 3rd switching device RT3, the 5th switching device RT11, the 6th switching device RT22 are igbt (IGBT).
The first end of the first switching device RT1, the 4th switching device RT4 is the drain electrode of MOFET, and second end of the first switching device RT1, the 4th switching device RT4 is the source electrode of MOFET; The first end of second switch device R T2, the 3rd switching device RT3, the 5th switching device RT11, the 6th switching device RT22 is the collector electrode of IGBT, and the second end is the emitter of IGBT.The first end of diode is anode, the second end is negative electrode.
See Fig. 5, in above-mentioned single-phase semi-bridge three-level inverter circuit, flow blocking element LR1 is inductance, the value of LR1 is less, other can also be adopted in reality can to control the electric component of current direction, block electric current and flow through the second diode RD2, the first diode RD1 to the first direct-flow input end M1 from ac output end AC.
See Fig. 7 and Fig. 8, above-mentioned single-phase semi-bridge three-level inverter circuit has eight kinds of operation modes, Fig. 7 a-7d is the current direction schematic diagram of single-phase semi-bridge three-level inverter circuit when working in unity power factor, and corresponding is first, second, third, fourth operation mode respectively; Fig. 8 a-8d is the current direction schematic diagram of single-phase semi-bridge three-level inverter circuit when working in non-unity power factor, and corresponding is the 5th, the 6th, the 7th, the 8th operation mode respectively;
First operation mode: electric current extremely exchanges output terminals A C through the first direct-flow input end M1, the first switching device RT1, second switch device R T2, flow blocking element LR1;
Second operation mode: electric current extremely exchanges output terminals A C through mid point level end O, the 5th diode RD5, second switch device R T2, flow blocking element LR1;
3rd operation mode: electric current is through ac output end AC, flow blocking element LR1, the 3rd switching device RT3, the 4th switching device RT4 to the second direct-flow input end N1;
4th operation mode: electric current through ac output end AC, flow blocking element LR1, the 3rd switching device RT 3, the 6th diode RD6 to mid point level end O;
5th operation mode: electric current through ac output end AC, the 6th switching device RT6, the tenth diode RD10 to mid point level end O;
6th operation mode: electric current is through ac output end AC, the 7th diode RD7 to the first direct-flow input end M1;
7th operation mode: electric current extremely exchanges output terminals A C through mid point level end O, the 9th diode RD9, the 5th switching device RT5;
8th operation mode: electric current extremely exchanges output terminals A C through the second direct-flow input end N1, the 8th diode RD8.
Fig. 9 discloses the drive singal figure of single-phase semi-bridge three-level inverter circuit breaker in middle device; Above-mentioned single-phase semi-bridge three-level inverter circuit is provided with the first Switching Condition and second switch condition, under the first Switching Condition, first switching device RT1 and the 6th switching device RT22 is with the high-frequency pulse signal trigger action of complementation, second switch device R T2 conducting, the 3rd switching device RT3, the 4th switching device RT4, the 5th switching device RT11 turn off; Under second switch condition, the first switching device RT1, second switch device R T2, the 6th switching device RT22 turn off, the 3rd switching device RT3 conducting, and the 4th switching device RT4 and the 5th switching device RT11 is with the high-frequency pulse signal trigger action of complementation.
It should be noted that, in the present embodiment, the positive half cycle of what the first Switching Condition was corresponding is ac output voltage, the negative half period of what second switch condition was corresponding is ac output voltage.
Further, in above-mentioned single-phase semi-bridge three-level inverter circuit, the high-frequency pulse signal of described first switching device RT1 under the first Switching Condition is identical with the high-frequency pulse signal of the 4th switching device RT4 under second switch condition; The high-frequency pulse signal of 5th switching device RT11 under second switch condition is identical with the high-frequency pulse signal of the 6th switching device RT22 under the first Switching Condition.
Concrete, above-mentioned high-frequency pulse signal is pwm signal, can be such as the pulse signal between a few KHZ to tens KHZ in scope.In reality, pulse signal comparatively can be generated by sinusoidal modulation wave and carrier wave ratio.
Compared with prior art, the the first switching device RT1 being operated in high frequency and the 4th switching device RT4 of the single-phase semi-bridge three-level inverter circuit of the embodiment of the present invention select the good MOSFET of switch performance, and the second switch device R T2 and the 3rd switching device RT3 that are operated in power frequency select the good IGBT of conduction property, and structure is by the 5th switching device RT11, 6th switching device RT22, 7th diode RD7, 8th diode RD8, 9th diode RD9, the idle branch road that tenth diode RD10 forms, 5th switching device RT11 and the 6th switching device RT22 selects the good IGBT of conduction property, make when requiring single-phase semi-bridge three-level inverter circuit to operate in the occasion of non-unity power factor, reactive current no longer flows through second switch device R T2, 3rd switching device RT3 and anti-paralleled diode RD2 thereof, RD3, and anti-paralleled diode RD1 and RD4 of the first switching device RT1 and the 4th switching device RT4, but flow through the 5th switching device RT11, 6th switching device RT22, 7th diode RD7, 8th diode RD8, 9th diode RD9, tenth diode RD10, thus meritorious path is effectively separated with idle path, make the range of choice of switching device large, reduce the switching loss of circuit and conduction loss and be conducive to switching device heat radiation, extend the useful life of switching device, improve the overall transformation efficiency of circuit, 7th diode RD7, the 8th diode RD8, the 9th diode RD9, the tenth diode RD10 are independently diode, and reverse recovery characteristic is better than diode in body, and circuit can adopt higher switching frequency, are also conducive to the conversion efficiency improving circuit.
The embodiment of the invention also discloses the three-level converter applying above-mentioned single-phase semi-bridge three-level inverter circuit, Fig. 6 gives the circuit diagram of the first embodiment of three-level converter, comprise an above-mentioned single-phase semi-bridge three-level inverter circuit, first direct-flow input end M1 of single-phase semi-bridge three-level inverter circuit connects the positive pole of DC power supply, second direct-flow input end N1 connects the negative pole of DC power supply, and mid point level end O connects the midpoint potential end of DC power supply.The midpoint potential of DC power supply by respectively between the first direct-flow input end M1 and mid point level end O, access the identical voltage source of voltage between mid point level end O and the second direct-flow input end N1 and construct.Electrical network or AC load are connected between the ac output end AC of single-phase semi-bridge three-level inverter circuit and mid point level end O.
See Figure 10, the voltage source V 1 that above-mentioned two voltages are identical, V2 also can be realized by the electric capacity that two parameters are identical, i.e. the first electric capacity C1 and the second electric capacity C2 in Figure 10.
Further, please also refer to Fig. 6 and Figure 10, between the ac output end AC of this single-phase half-bridge three-level circuit and AC load or electrical network, be connected with filter circuit.Described filter circuit comprises the first inductance L 1, and actual can also be the filter circuit of LC or LCL form.
The operation mode of this three-level converter is identical with the operation mode of single-phase semi-bridge three-level inverter circuit, repeats no more herein.
Figure 11 gives the circuit diagram of the second embodiment of three-level converter, comprise two above-mentioned single-phase half-bridge three-level circuit, i.e. the first single-phase half-bridge three-level circuit and the second single-phase half-bridge three-level circuit, the negative pole that the first direct-flow input end M1 all connects the positive pole of DC power supply, the second direct-flow input end N1 all connects DC power supply of first, second single-phase half-bridge three-level circuit described, mid point level end O all connect the midpoint potential end of DC power supply.The midpoint potential of DC power supply by accessing the identical voltage source V of voltage 1 respectively between the first direct-flow input end M1 and mid point level end O, between mid point level end O and the second direct-flow input end N1, V2 constructs.Electrical network or AC load are connected between the ac output end AC of the first single-phase half-bridge three-level circuit and the second single-phase half-bridge three-level circuit.All the other are with the first embodiment of three-level converter.
Figure 12 gives the circuit diagram of the 3rd embodiment of three-level converter, comprise three above-mentioned single-phase half-bridge three-level circuit, i.e. the first single-phase half-bridge three-level circuit, the second single-phase half-bridge three-level circuit and the 3rd single-phase half-bridge three-level circuit, first direct-flow input end M1 of described single-phase half-bridge three-level circuit all connects the positive pole of DC power supply, second direct-flow input end N1 all connects the negative pole of DC power supply, and mid point level end O all connects the midpoint potential end of DC power supply.The midpoint potential of DC power supply by accessing the identical voltage source V of voltage 1 respectively between the first direct-flow input end M1 and mid point level end O, between mid point level end O and the second direct-flow input end N1, V2 constructs.The ac output end AC of first, second, third single-phase half-bridge three-level circuit connects three phase network or AC load.All the other are with the first embodiment of three-level converter.
Compared with prior art, the the first switching device RT1 and the 4th switching device RT4 that are operated in high frequency in the three-level converter of the embodiment of the present invention select the good MOSFET of switch performance, and the second switch device R T2 and the 3rd switching device RT3 that are operated in power frequency select the good IGBT of conduction property, and structure is by the 5th switching device RT11, 6th switching device RT22, 7th diode RD7, 8th diode RD8, 9th diode RD9, the idle branch road that tenth diode RD10 forms, 5th switching device RT11 and the 6th switching device RT22 selects the good IGBT of conduction property, make when requiring single-phase semi-bridge three-level inverter circuit to operate in the occasion of non-unity power factor, reactive current no longer flows through second switch device R T2, 3rd switching device RT3 and anti-paralleled diode RD2 thereof, RD3, and anti-paralleled diode RD1 and RD4 of the first switching device RT1 and the 4th switching device RT4, but flow through the 5th switching device RT11, 6th switching device RT22, 7th diode RD7, 8th diode RD8, 9th diode RD9, tenth diode RD10, thus meritorious path is effectively separated with idle path, make the range of choice of switching device large, reduce the switching loss of circuit and conduction loss and be conducive to switching device heat radiation, extend the useful life of switching device, improve the overall transformation efficiency of circuit, 7th diode RD7, the 8th diode RD8, the 9th diode RD9, the tenth diode RD10 are independently diode, and reverse recovery characteristic is better than diode in body, and circuit can adopt higher switching frequency, are also conducive to the conversion efficiency improving circuit.
Obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Claims (9)
1. a single-phase semi-bridge three-level inverter circuit, it is characterized in that: comprise the first direct-flow input end, mid point level end, the second direct-flow input end, the first switching device, second switch device, the 3rd switching device, the 4th switching device, the 5th switching device and the 6th switching device, and the 5th diode, the 6th diode, the 7th diode, the 8th diode, the 9th diode, the tenth diode;
The first end of the first switching device and the negative electrode of the 7th diode connect the first direct-flow input end, and the second end of the 4th switching device and the anode of the 8th diode connect the second direct-flow input end;
The anode of the anode of the 5th diode, the negative electrode of the 6th diode, the 9th diode, the negative electrode of the tenth diode connect described mid point level end after being connected, the negative electrode of the 5th diode connects the second end of the first switching device and the first end of second switch device, and the anode of the 6th diode connects the second end of the 3rd switching device and the first end of the 4th switching device;
The negative electrode of the first termination the 9th diode of the 5th switching device, the anode of the second termination the tenth diode of the 6th switching device; Second end of the 5th switching device is connected with the first end of the 6th switching device, and its tie point connects the anode of the 7th diode and the negative electrode of the 8th diode;
Second end of second switch device is connected with the first end of the 3rd switching device, is connected with flow blocking element between the second end of its tie point and the 5th switching device;
First switching device, second switch device, the 3rd switching device, the 4th switching device, the 5th switching device, the 6th switching device respectively reverse parallel connection have the first diode, the second diode, the 3rd diode, the 4th diode, the 11 diode and the 12 diode;
The tie point of the second end of the 5th switching device and the first end of the 6th switching device is as ac output end;
Be provided with the first Switching Condition and second switch condition, under described first Switching Condition, the first switching device and the 6th switching device with the high-frequency pulse signal trigger action of complementation, second switch break-over of device, the 3rd, the 4th, the 5th switching device turn off; Under described second switch condition, first, second, the 6th switching device turn off, the 3rd switch device conductive, the 4th switching device and the 5th switching device are with the high-frequency pulse signal trigger action of complementation.
2. single-phase semi-bridge three-level inverter circuit according to claim 1, is characterized in that: the high-frequency pulse signal of described first switching device under the first Switching Condition is identical with the high-frequency pulse signal of the 4th switching device under second switch condition; The high-frequency pulse signal of 5th switching device under second switch condition is identical with the high-frequency pulse signal of the 6th switching device under the first Switching Condition.
3. single-phase semi-bridge three-level inverter circuit according to claim 2, it is characterized in that: described first switching device, the 4th switching device are mos field effect transistor, second switch device, the 3rd switching device, the 5th switching device, the 6th switching device are igbt.
4. single-phase semi-bridge three-level inverter circuit according to claim 2, is characterized in that: described flow blocking element is inductance.
5. the single-phase semi-bridge three-level inverter circuit according to any one of Claims 1-4, is characterized in that: comprise eight kinds of operation modes, be respectively:
First operation mode: electric current through the first direct-flow input end, the first switching device, second switch device, flow blocking element to ac output end;
Second operation mode: electric current through mid point level end, the 5th diode, second switch device, flow blocking element to ac output end;
3rd operation mode: electric current is through ac output end, flow blocking element, the 3rd switching device, the 4th switching device to the second direct-flow input end;
4th operation mode: electric current through ac output end, flow blocking element, the 3rd switching device, the 6th diode to mid point level end;
5th operation mode: electric current through ac output end, the 6th switching device, the tenth diode to mid point level end;
6th operation mode: electric current is through ac output end, the 7th diode to the first direct-flow input end;
7th operation mode: electric current through mid point level end, the 9th diode, the 5th switching device to ac output end;
8th operation mode: electric current through the second direct-flow input end, the 8th diode to ac output end.
6. a three-level converter, it is characterized in that: comprise the single-phase semi-bridge three-level inverter circuit at least one claim 1 to 5 described in any one, first direct-flow input end of described single-phase semi-bridge three-level inverter circuit all connects the positive pole of DC power supply, second direct-flow input end all connects the negative pole of DC power supply, and mid point level end all connects the midpoint potential end of DC power supply.
7. three-level converter according to claim 6, is characterized in that: the midpoint potential end of described DC power supply by respectively between the first direct-flow input end and mid point level end, access the identical voltage source of voltage between mid point level end and the second direct-flow input end and construct.
8. three-level converter according to claim 7, is characterized in that: the voltage source that described voltage is identical is the electric capacity that parameter is identical.
9. the three-level converter according to any one of claim 6 to 8, is characterized in that, is connected with filter circuit between the ac output end of described single-phase semi-bridge three-level inverter circuit and AC load or electrical network.
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| EP3376661A1 (en) * | 2017-03-13 | 2018-09-19 | Delta Electronics, Inc. | Power inverter and power inverting method |
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| CN104660080B (en) * | 2015-03-23 | 2017-04-19 | 阳光电源股份有限公司 | Modulating method and device of 1-type multi-level circuit |
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| CN102005958A (en) * | 2010-11-25 | 2011-04-06 | 河北工业大学 | Photovoltaic grid-connected three-level inverter |
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