CN102768967A - Method for monitoring homogeneity and stability of F element ion injection process - Google Patents
Method for monitoring homogeneity and stability of F element ion injection process Download PDFInfo
- Publication number
- CN102768967A CN102768967A CN2012102257887A CN201210225788A CN102768967A CN 102768967 A CN102768967 A CN 102768967A CN 2012102257887 A CN2012102257887 A CN 2012102257887A CN 201210225788 A CN201210225788 A CN 201210225788A CN 102768967 A CN102768967 A CN 102768967A
- Authority
- CN
- China
- Prior art keywords
- monitoring
- processing procedure
- element ion
- homogeneity
- grained region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a method for monitoring the homogeneity and the stability of the F element ion injection process, which includes the following steps: providing a wafer, and dividing the wafer into multiple grain regions; selecting one of the grain regions, and injecting a certain dose of F element into the selected gain region; depositing a layer of oxide on the surface of the grain region containing F element ions; performing high temperature annealing process to the grain region, and forming bosses on the surface of the oxide; measuring the perimeters of the bosses in the grain region, and calculating the sum of the perimeters of the bosses; and determining F element of different doses, repeating the steps, and establishing a database system for relation between the perimeter and the F element injection dose. Through the method, the F element ion injection process can be efficiently monitored, and the guarantee is provided for improvement of the performance and yield of the device; and moreover, the damage to the wafer is efficiently lowered, or the recovery utilization ratio is improved, and the cost is saved.
Description
Technical field
The present invention relates to microelectronic, relate in particular to a kind of F of monitoring element ion and inject processing procedure homogeneity and stable method.
Background technology
Along with the development of integrated circuit technology and dimension shrinks in proportion; The control of device is more and more meticulousr; Ion injects device performance is played a key effect; The electrical parameter that injects a lot of keys such as the F element ion has very big influence, and Negative Bias Temperature Instability (NBTI:Negative Bias Temperature Instability) is exactly one of them.
Be directed against the F atomic group at present (like BF
2) off line monitoring mainly carry out through measuring sheet resistance Rs numerical value, but this kind method is owing to need penetrate wafer with probe, can serious damage wafer, be difficult to reclaim and second use.And monitor to the off line of F atom; Mode commonly used is to measure appearance through heat wave the roughness that measures crystal column surface is carried out; This kind method is very high to the required precision that heat wave measures appearance; But heat wave measures the Laser emission device of appearance belongs to the device that is easy to loss, and institute's emitted laser is easy to generate decay, causes the error to actual metric data.
Summary of the invention
To the problem of above-mentioned existence, the objective of the invention is a kind of F element ion of can monitoring and inject the homogeneity of processing procedure and the method for stability, effective monitoring F element ion injects processing procedure, provides safeguard for improving device performance and yield; And effectively reduce the infringement of wafer or improve recovery utilization rate, save cost.
The objective of the invention is to realize through following technical proposals:
A kind of F element ion of monitoring injects processing procedure homogeneity and stable method, wherein, may further comprise the steps:
S1 a: wafer is provided, said wafer is divided into the polylith grained region;
S2: the F element that in said grained region, injects doses;
S3: be doped with said grained region surface deposition one deck oxide of F element ion;
S4: said grained region is carried out high-temperature annealing process, produce protruding at said oxide surface;
S5: the said convexity to said grained region is carried out circumferential measurements, calculates the girth sum of all said convexities;
S6: confirm the F element of various dose, repeated execution of steps S1-S5 sets up the relational database system between girth-F element implantation dosage.
Above-mentioned monitoring F element ion injects processing procedure homogeneity and stable method; Wherein, before execution in step S6, repeat repeatedly execution in step S1-S5; Repeat to inject the F element of same dosage; Calculate the girth sum numerical value of a plurality of said convexities, the numerical value of said a plurality of girth sums is averaged calculating, draw average perimeter numerical value.
Above-mentioned monitoring F element ion injects processing procedure homogeneity and stable method, and wherein, said oxide is the oxide that contains element silicon.
Above-mentioned monitoring F element ion injects processing procedure homogeneity and stable method, and wherein, the area of said grained region is 20umx50um.
Above-mentioned monitoring F element ion injects processing procedure homogeneity and stable method, and wherein, in step S5, the quantification processing procedure monitoring method of employing electron microscope is calculated the girth of said convexity.
Above-mentioned monitoring F element ion injects processing procedure homogeneity and stable method, and wherein, in step S4, said high-temperature annealing process is the RTA annealing process.
The present invention is that a kind of F element ion of can monitoring of invention injects the homogeneity of processing procedure and the method for stability; Be to use the character that the annealing process of F element after ion injects is easy to separate out; Design test module on wafer; And inject and to want the F element dosage of monitoring, through the annealing process behind the oxide of vapor deposited silicon, F is produced separate out; The quantification processing procedure of applying electronic microscope (SEM) monitoring (QPM:Quantified Process Monitoring) method is calculated the situation that F on the design module separates out then; And set up F element dosage and database that F separates out situation, and then only need with each monitoring result therewith database compare, can realize monitoring effect.
Description of drawings
Fig. 1 is the structural representation of the selected wafer to be tested of the method for a kind of F of monitoring element ion injection processing procedure homogeneity of the present invention and stability;
Fig. 2 A-Fig. 2 C is the processing step decomposing state sketch map of step S2-step S3 of the present invention.
Fig. 3 is the structural representation of the grained region behind the execution in step S4 among the present invention.
Fig. 4 is that a kind of F of monitoring element ion of the present invention injects processing procedure homogeneity and stable method flow schematic block diagram.
Embodiment
Below in conjunction with schematic diagram and concrete operations embodiment the present invention is described further.
Monitor the flow chart of steps that the F element ion injects processing procedure homogeneity and the method for stability referring to a kind of shown in Fig. 4, combine Fig. 1,2 and a kind of F element ion of monitoring of Fig. 3 inject processing procedure homogeneity and stable method, wherein, may further comprise the steps:
Step S1: as shown in fig. 1, a wafer 1 is provided, wafer 1 is divided into polylith grained region 2, for example, the area of each grained region 2 is confirmed as 20umx50um.
Step S2: shown in Fig. 2 A, in this grained region 2, inject the F element 3 of doses;
Step S3: shown in Fig. 2 B, at the siliceous oxide 4 of the grained region that is doped with the F element ion 2 surface deposition one decks;
Step S4: shown in Fig. 2 C, this grained region 2 is carried out high-temperature annealing process, produce protruding 5 on oxide 4 surfaces;
In this step S4, take rta technique (RTA) technology, this grained region 2 that has the F ion to inject to be annealed, the F element can make siliceous oxide 4 produce protruding 5 under heat effect.
Step S5: as shown in Figure 3, the convexity in the grained region 25 is carried out circumferential measurements, calculate all girth sums of protruding 5;
In this step; Adopt quantification processing procedure monitoring method (the QPM:Quantified Process Monitoring) measuring and calculating of electron microscope (SEM) that each protruding 5 the bottom surface girth in each grained region 2 is measured; Obtain a circumferential measurements value; The numerical value that then measured value of all protruding 5 the bottom surface girths in this grained region 2 is carried out the anded gained is the girth numerical value of this grained region 2; Girth numerical value addition in all crystal grains that will select the again zone 2 promptly obtains total girth numerical value of the convexity 5 that this wafer to be measured produces behind the F element that injects doses.
Then; Repeat above-mentioned steps; Calculate in identical wafer to be measured 1 inject same dose F element after, total girth numerical value of all in the wafer 1 protruding 5, and total girth numerical value of each wafer 1 of being obtained is carried out sum-average arithmetic calculate; Calculate an average perimeter numerical value, write down the corresponding relation of dose value of the F element of this average perimeter numerical value and injection.
Step S6: confirm the F element of various dose, repeated execution of steps S1-S5 sets up the relational database between average perimeter-F element dosage.
Promptly in this step, through injecting the F element of various dose, repeat above-mentioned steps, obtain under each injectant value the corresponding average perimeter numerical value that the is obtained line item of going forward side by side.And then, inject corresponding average perimeter numerical value according to each dose F element, produce the database of an average perimeter-F element dose relationship.
Utilize the database of the average perimeter-F element dosage element relation of this foundation, each monitoring result and this database are compared, both can realize the F element ion is injected the monitoring of stability.
In addition, compare, both can realize the F element ion is injected the monitoring of equal delegation through overall circumference numerical value with each grained region 2 in the wafer to be monitored.
More than specific embodiment of the present invention is described in detail, but the present invention is not restricted to the specific embodiment of above description, it is just as example.To those skilled in the art, any equivalent modifications and alternative also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of having done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (6)
1. monitor the method that the F element ion injects processing procedure homogeneity and stability for one kind, it is characterized in that, may further comprise the steps:
S1 a: wafer is provided, said wafer is divided into the polylith grained region;
S2: the F element that in said grained region, injects doses;
S3: be doped with said grained region surface deposition one deck oxide of F element ion;
S4: said grained region is carried out high-temperature annealing process, produce protruding at said oxide surface;
S5: the said convexity to said grained region is carried out circumferential measurements, calculates the girth sum of all said convexities;
S6: confirm the F element of various dose, repeated execution of steps S1-S5 sets up the relational database system between girth-F element implantation dosage.
2. monitoring F element ion according to claim 1 injects processing procedure homogeneity and stable method; It is characterized in that, before execution in step S6, repeat repeatedly execution in step S1-S5; Repeat to inject the F element of same dosage; Calculate the girth sum numerical value of a plurality of said convexities, the numerical value of said a plurality of girth sums is averaged calculating, draw average perimeter numerical value.
3. monitoring F element ion according to claim 1 injects processing procedure homogeneity and stable method, it is characterized in that said oxide is the oxide that contains element silicon.
4. monitoring F element ion according to claim 1 injects processing procedure homogeneity and stable method, it is characterized in that the area of said grained region is 20umx50um.
5. monitoring F element ion according to claim 1 injects processing procedure homogeneity and stable method, it is characterized in that, in step S5, the quantification processing procedure monitoring method of employing electron microscope is calculated the girth of said convexity.
6. monitoring F element ion according to claim 1 injects processing procedure homogeneity and stable method, it is characterized in that in step S4, said high-temperature annealing process is the RTA annealing process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210225788.7A CN102768967B (en) | 2012-07-03 | 2012-07-03 | Method for monitoring homogeneity and stability of F element ion injection process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210225788.7A CN102768967B (en) | 2012-07-03 | 2012-07-03 | Method for monitoring homogeneity and stability of F element ion injection process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102768967A true CN102768967A (en) | 2012-11-07 |
| CN102768967B CN102768967B (en) | 2015-04-29 |
Family
ID=47096312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210225788.7A Active CN102768967B (en) | 2012-07-03 | 2012-07-03 | Method for monitoring homogeneity and stability of F element ion injection process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102768967B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1851867A (en) * | 2005-04-22 | 2006-10-25 | 北京中科信电子装备有限公司 | Ion injection uniformity control system and control method |
| US20080188013A1 (en) * | 2007-02-06 | 2008-08-07 | Seon-Mee Cho | In-situ dose monitoring using optical emission spectroscopy |
| CN101329989A (en) * | 2007-06-22 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting ion injection equipment |
| CN101467227A (en) * | 2006-06-09 | 2009-06-24 | 瓦里安半导体设备公司 | Ion beam current uniformity monitor, ion implanter and related method |
-
2012
- 2012-07-03 CN CN201210225788.7A patent/CN102768967B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1851867A (en) * | 2005-04-22 | 2006-10-25 | 北京中科信电子装备有限公司 | Ion injection uniformity control system and control method |
| CN101467227A (en) * | 2006-06-09 | 2009-06-24 | 瓦里安半导体设备公司 | Ion beam current uniformity monitor, ion implanter and related method |
| US20080188013A1 (en) * | 2007-02-06 | 2008-08-07 | Seon-Mee Cho | In-situ dose monitoring using optical emission spectroscopy |
| CN101329989A (en) * | 2007-06-22 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting ion injection equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102768967B (en) | 2015-04-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101225506B (en) | Method for monitoring ion implantation state | |
| WO2017157058A1 (en) | Probabilistic load flow calculation method considering admitting ability of power grid | |
| CN111079276B (en) | Method for accelerating verification of reliability index of electronic product in multiple failure modes | |
| d'Alessandro et al. | Accurate and efficient analysis of the upward heat flow in InGaP/GaAs HBTs through an automated FEM‐based tool and Design of Experiments | |
| CN106128518A (en) | A kind of method obtaining the few group cross-section of high-precision fast neutron reaction pile component | |
| CN105551992A (en) | Test method for ion implantation machine base | |
| Brito et al. | Two-dimensional X Y and clock models studied via the dynamics generated by rough surfaces | |
| CN108877969B (en) | Nuclear power theoretical model establishing and verifying method, system and terminal equipment | |
| CN102721873A (en) | Testing method for polycrystalline silicon thin film resistor on polycrystalline silicon array substrate | |
| US7474011B2 (en) | Method for improved single event latch up resistance in an integrated circuit | |
| CN102768967A (en) | Method for monitoring homogeneity and stability of F element ion injection process | |
| CN116467985B (en) | IGBT dynamic avalanche current wire prediction method and system | |
| CN106777032A (en) | A kind of mixing approximate enquiring method under cloud computing environment | |
| CN111597690B (en) | Method for establishing electric vehicle charging equipment demand coefficient calculation model | |
| US10247766B2 (en) | System, method and test layout for detecting leakage current | |
| CN111709152B (en) | Method for determining structural parameters of SiC field limiting ring terminal | |
| Horowitz et al. | Ballistic deposition on deterministic fractals: Observation of discrete scale invariance | |
| CN101995774B (en) | Method for monitoring performance of DMR | |
| CN101969036A (en) | Method for improving utilization factor of monitoring chip | |
| Amoskov et al. | Distortion of magnetic field lines caused by radial displacements of ITER toroidal field coils | |
| CN103500718A (en) | Method for monitoring ion implantation technology for manufacturing of integrated circuit | |
| CN116736075B (en) | Transistor matching precision detection method, controller and storage medium | |
| Casse et al. | RD50 Prolongation Request 2018 | |
| Ko et al. | Nonlinear diffusion process modeling using response surface methodology and variable transformation | |
| CN100501918C (en) | Method for improving and monitoring crystal round utilization ratio |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |