CN102760841B - Organic light-emitting diode device and corresponding display device - Google Patents
Organic light-emitting diode device and corresponding display device Download PDFInfo
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- CN102760841B CN102760841B CN201210239098.7A CN201210239098A CN102760841B CN 102760841 B CN102760841 B CN 102760841B CN 201210239098 A CN201210239098 A CN 201210239098A CN 102760841 B CN102760841 B CN 102760841B
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- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 94
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- OWXLRKWPEIAGAT-UHFFFAOYSA-N [Mg].[Cu] Chemical compound [Mg].[Cu] OWXLRKWPEIAGAT-UHFFFAOYSA-N 0.000 claims description 67
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 25
- 229910052749 magnesium Inorganic materials 0.000 claims description 24
- 239000011777 magnesium Substances 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 7
- PXRFVGHEOSGZJN-UHFFFAOYSA-N [Ag].[Cu].[Mg] Chemical group [Ag].[Cu].[Mg] PXRFVGHEOSGZJN-UHFFFAOYSA-N 0.000 abstract description 5
- 238000002310 reflectometry Methods 0.000 description 12
- 230000003746 surface roughness Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 238000000605 extraction Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
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- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention relates an organic light-emitting diode device and a corresponding display device. The organic light-emitting diode device comprises a metal anode, an organic emission layer, a transparent cathode and a reflecting layer, wherein the organic emission layer is arranged on the metal anode, and the transparent cathode is arranged on the organic emission layer; and the reflecting layer is arranged between the metal anode and the organic emission layer, and the reflecting layer is a silver magnesium copper alloy layer. The organic light-emitting diode device and the corresponding display device provided by the invention have the advantages that the making cost is low, and the light emitting efficiency is high.
Description
Technical field
The present invention relates to organic electroluminescent field, particularly relate to a kind of organic light emitting diode device and corresponding display unit that improves light extraction efficiency.
Background technology
, in the situation that there is no ambient light, display effect is very perfect for liquid crystal indicator (LCD, liquid crystal display).But in the time there is ambient light (as sunlight), it is very poor that display effect will become.Therefore, for this problem of liquid crystal indicator, developed a kind of Organic Light Emitting Diode (OLED, organic light emitting diodes) display unit, this OLED display unit comprise anode, negative electrode and be arranged on anode and negative electrode between organic emission layer.When this OLED display unit work, the hole of anode and the electronics of negative electrode are compound in organic emission layer, thereby form excitation of electron-hole, in the time that excitation returns to ground state, will give off energy and then emit beam.
Therefore OLED display unit is a kind of self light-emitting display device, and with respect to liquid crystal display, visibility and the brightness of OLED display unit are higher, also can reach preferably display effect in the time there is ambient light.Because OLED display unit does not need to arrange separately color filter and backlight module, therefore it also has the feature of more frivolous, high contrast, high color saturation, wide viewing angle, fast reaction and low energy consumption simultaneously.
Fig. 1 is the structural representation of the OLED device of prior art, it comprises substrate 11, metal anode 12, transparent cathode 13 and be arranged on metal anode 12 and transparent cathode 13 between organic emission layer 14, wherein between different organic emission layer 14, be also provided with separaant 18.The metal anode 12 is here opaque Ag electrode, and this metal anode 12, except using as electrode, also can be used for, by the part light reflection of organic emission layer 14 outgoing, this part light being penetrated from transparent cathode 13.For the reflection of reinforcement metal anode 12 to light, also can reflector (not shown) be set on metal anode 12 surfaces, the material in this reflector is generally silver-colored palladium-copper alloy, wherein the weight percentage ranges of silver element is 90%-95%, the weight percentage ranges of palladium element is 4%-8%, the percentage by weight of copper is 1% left and right, because the ratio of noble silver is very high, makes like this high cost in reflector.Silver-colored palladium-copper alloy structural system is solid solution structure simultaneously, metallic atom is solid solution distribution in material, in preparation due to the easy supernormal growth of temperature reason silver crystal grain, cause surface, reflector comparatively coarse, affect the light reflection efficiency in reflector, and then affected the light extraction efficiency of corresponding display unit.
Therefore, be necessary to provide a kind of organic light emitting diode device and corresponding display unit, to solve the existing problem of prior art.
Summary of the invention
The object of the present invention is to provide a kind of cost of manufacture is low, light extraction efficiency is high organic light emitting diode device and corresponding display unit, solved the technical problem that cost of manufacture is higher, light extraction efficiency is lower of existing organic light emitting diode device and corresponding display unit.
For addressing the above problem, technical scheme provided by the invention is as follows:
The present invention relates to a kind of organic light emitting diode device, comprising: metal anode; Organic emission layer, is arranged on described metal anode; Transparent cathode, is arranged in described organic emission layer; And reflector, being arranged between described metal anode and described organic emission layer, described reflector is silver-colored magnesium copper alloy layer.
In organic light emitting diode device of the present invention, in described silver-colored magnesium copper alloy layer, the scope of the percentage by weight of magnesium elements is 12%-19%.
In organic light emitting diode device of the present invention, in described silver-colored magnesium copper alloy layer, the scope of the percentage by weight of magnesium elements is 14%-17%.
In organic light emitting diode device of the present invention, the thickness range of described silver-colored magnesium copper alloy layer is 80 nanometer to 150 nanometers.
In organic light emitting diode device of the present invention, described organic light emitting diode device also comprises and is arranged on the resilient coating on described transparent cathode and is arranged on the protective clear layer on described resilient coating.
In organic light emitting diode device of the present invention, described organic emission layer comprises blue organic emission layer, green organic emission layer and red organic emission layer.
The invention still further relates to a kind of display unit, it comprises: multiple organic light emitting diode devices, comprising: metal anode; Organic emission layer, is arranged on described metal anode; Transparent cathode, is arranged in described organic emission layer; And reflector, being arranged between described metal anode and described organic emission layer, described reflector is silver-colored magnesium copper alloy layer; And drive circuit, luminous for controlling described multiple organic light emitting diode device.
In display unit of the present invention, in described silver-colored magnesium copper alloy layer, the scope of the percentage by weight of magnesium elements is 12%-19%.
In display unit of the present invention, in described silver-colored magnesium copper alloy layer, the scope of the percentage by weight of magnesium elements is 14%-17%.
In display unit of the present invention, the thickness range of described silver-colored magnesium copper alloy layer is 80 nanometer to 150 nanometers.
Compared to existing organic light emitting diode device and corresponding display unit, organic light emitting diode device of the present invention and corresponding display unit cost of manufacture is low, light extraction efficiency is high, has solved the technical problem that cost of manufacture is higher, light extraction efficiency is lower of existing organic light emitting diode device and corresponding display unit.
For foregoing of the present invention can be become apparent, preferred embodiment cited below particularly, and coordinate appended graphicly, be described in detail below:
Brief description of the drawings
Fig. 1 is the structural representation of the organic light emitting diode device of prior art;
Fig. 2 is the structural representation of the preferred embodiment of organic light emitting diode device of the present invention;
Fig. 3 is the surface roughness schematic diagram with the silver-colored magnesium copper alloy layer of different content magnesium elements;
Fig. 4 is the reflectivity collection of illustrative plates with the silver-colored magnesium copper alloy layer of different-thickness;
Fig. 5 is the rough surface situation schematic diagram of the silver-colored magnesium copper alloy layer before heat treatment;
Fig. 6 is the rough surface situation schematic diagram of the silver-colored magnesium copper alloy layer after heat treatment;
Fig. 7 is the rough surface situation schematic diagram of the silver-colored palladium-copper alloy layer before heat treatment;
Fig. 8 is the rough surface situation schematic diagram of the silver-colored palladium-copper alloy layer after heat treatment;
Fig. 9 is silver-colored magnesium copper alloy under different-waveband and the reflectivity collection of illustrative plates of silver-colored palladium-copper alloy.
Embodiment
The explanation of following embodiment is graphic with reference to what add, can be in order to the specific embodiment of implementing in order to illustrate the present invention.The direction term that the present invention mentions, for example " on ", D score, 'fornt', 'back', " left side ", " right side ", " interior ", " outward ", " side " etc., be only the direction with reference to annexed drawings.Therefore, the direction term of use is in order to illustrate and to understand the present invention, but not in order to limit the present invention.
In the drawings, the unit of structural similarity is to represent with same numeral.
Please refer to Fig. 2, the structural representation of the preferred embodiment that Fig. 2 is organic light emitting diode device of the present invention.Organic light emitting diode device comprises substrate 21, metal anode 22, organic emission layer 24, transparent cathode 23, reflector 25, resilient coating 26 and protective clear layer 27.Wherein metal anode 22 is arranged on substrate 21; Organic emission layer 24 is arranged on metal anode 22; Transparent cathode 23 is arranged in organic emission layer 24; Resilient coating 26 is arranged on transparent cathode 23, for making organic light emitting diode device flattening surface; Protective clear layer 27 is arranged on resilient coating 26, for reducing the impact of the external environment that organic light emitting diode device is subject to; Organic emission layer can comprise blue organic emission layer, green organic emission layer and red organic emission layer, between different organic emission layer, isolates by separaant 28.Reflector 25 is arranged between metal anode 22 and organic emission layer 24, and the light sending for reflecting organic emission layer 24 makes the light being reflected be penetrated by transparent cathode 23 sides, thereby improves the light extraction efficiency of organic light emitting diode device.This reflector 25 is silver-colored magnesium copper alloy layer, and wherein in silver-colored magnesium copper alloy layer, the percentage by weight of copper is 1% left and right, and the scope of the percentage by weight of magnesium elements is 12%-19%, is preferably 14%-17%.The thickness range of silver magnesium copper alloy layer is 80 nanometer to 150 nanometers.
Organic light emitting diode device of the present invention uses silver-colored magnesium copper alloy layer as reflector 25, magnesium atom in silver magnesium copper alloy layer is Patterns for Close-Packed Hexagonal Crystal structure, can with silver-colored magnesium copper alloy layer in silver atoms generate stable intermetallic compound, make the preparation of silver-colored magnesium copper alloy layer more stable.When preparing simultaneously and using silver-colored magnesium copper alloy layer, the stable silver-colored magnesium intermetallic compound of generation can effectively pin and is hindered because silver metal surface can cause the growth of silver-colored crystal grain in silver-colored magnesium copper alloy layer.When making silver-colored magnesium copper alloy layer in preparation and using, the surface of silver-colored magnesium copper alloy layer is all more smooth, and magnesium is similar with silver simultaneously, is the metal of class silver look, can greatly improve like this reflection efficiency of light, and then improves the light extraction efficiency of display unit.
While using silver-colored magnesium copper alloy layer of the present invention as reflector 25, the percentage by weight of magnesium elements in silver-colored magnesium copper alloy layer should not be too high or too low, as too high in the percentage by weight of magnesium elements, may cause generating stable silver-colored magnesium AgMg intermetallic compound with silver atoms, but generate AgMg and AgMg
3two-phase mixture, the reduction that complicated multi-factor structure can be to a certain degree the stability in material preparation and use procedure; As too low in the percentage by weight of magnesium elements, the percentage by weight of silver element need to be increased greatly (copper of doping is trace element, and percentage by weight is 1% left and right) here, thereby the cost of manufacture in reflector 25 is improved greatly.Through evidence, when the scope of the percentage by weight of magnesium elements in silver-colored magnesium copper alloy layer is 12%-19%, can reach preferably effect, the best in the time adopting the scope of the percentage by weight of magnesium elements in silver-colored magnesium copper alloy layer to be 14%-17%, specific as follows described in.
Please refer to Fig. 3, Fig. 3 is the surface roughness schematic diagram with the silver-colored magnesium copper alloy layer of different content magnesium elements.8 silver-colored magnesium copper alloy layer samples that wherein scope of the percentage by weight in silver-colored magnesium copper alloy layer is 12%-19% to magnesium elements are tested; then each silver-colored magnesium copper alloy layer sample heat-treated; be positioned over by above-mentioned sample in the nitrogen protection stove of 250 DEG C and heat one hour; after taking-up, carry out again surface roughness test; as seen from the figure; the roughness of the silver-colored magnesium copper alloy layer sample that the scope of the percentage by weight of magnesium elements in silver-colored magnesium copper alloy layer is 14%-17% is lower, and reflecting properties is better.
The thickness range the best in silver-colored magnesium copper alloy of the present invention reflector is 80 nanometer to 150 nanometers simultaneously.As excessive in the thickness of silver-colored magnesium copper alloy layer, the surface roughness in reflector 25 can be too high, and the reflection efficiency in reflector 25 is reduced on the contrary.As too small in the thickness of silver-colored magnesium copper alloy layer, the light transmission rate in reflector 25 can promote, and causes the reflection efficiency in reflector 25 to reduce.Through evidence, when the thickness range in silver-colored magnesium copper alloy reflector is 80 nanometer to 150 nanometer, can reach preferably effect, the best in the time that the thickness range in silver-colored magnesium copper alloy reflector is 100 nanometer to 140 nanometer, specific as follows described in.
Please refer to Fig. 4, Fig. 4 is the reflectivity collection of illustrative plates with the silver-colored magnesium copper alloy layer of different-thickness.As seen from the figure, no matter for long wavelength's light or short wavelength's light, thickness is that the reflectivity of silver-colored magnesium copper alloy layer of 100 nanometer to 140 nanometers is all higher, and reflecting properties is better.
Below by the corresponding test data of Fig. 5 to Fig. 8, illustrate that the light reflective properties in silver-colored magnesium copper alloy of the present invention reflector is far superior to the silver-colored palladium-copper alloy reflector of prior art.Wherein Fig. 5 is the rough surface situation schematic diagram of the silver-colored magnesium copper alloy layer before heat treatment, Fig. 6 is the rough surface situation schematic diagram of the silver-colored magnesium copper alloy layer after heat treatment, Fig. 7 is the rough surface situation schematic diagram of the silver-colored palladium-copper alloy layer before heat treatment, and Fig. 8 is the rough surface situation schematic diagram of the silver-colored palladium-copper alloy layer after heat treatment.
Wherein silver-colored palladium-copper alloy layer and silver-colored magnesium copper alloy layer all adopt sputtering method to make, and both thickness is 120 nanometers.Before heat-treating, silver-colored palladium-copper alloy layer and silver-colored magnesium copper alloy layer are carried out to surface roughness test (using Atomic Mechanics microscope), the surface roughness value (Ra) of the silver-colored magnesium copper alloy layer in Fig. 5 is 0.72 nanometer, the surface roughness value of the silver-colored palladium-copper alloy layer in Fig. 7 is 0.84 nanometer, visible in the situation that reflector thickness is identical, the surface smoothness of silver-colored magnesium copper alloy layer is better than silver-colored palladium-copper alloy layer.Subsequently silver-colored palladium-copper alloy layer and silver-colored magnesium copper alloy layer are heat-treated; they are positioned in the nitrogen protection stove of 250 DEG C and are heated one hour; after taking-up, carry out again surface roughness test; the surface roughness value of the silver-colored magnesium copper alloy layer after the heat treatment in Fig. 6 is 1.29 nanometers, and the surface roughness value of the silver-colored palladium-copper alloy layer after the heat treatment in Fig. 8 is 2.71 nanometers.Visible after Overheating Treatment, the surface roughness of silver-colored palladium-copper alloy layer has improved more than 3 times, and the surface roughness of silver-colored magnesium copper alloy layer has only improved less than 2 times, and therefore the reliability of silver-colored magnesium copper alloy layer or tolerance are also better than silver-colored palladium-copper alloy layer.
Please refer to Fig. 9, Fig. 9 is silver-colored magnesium copper alloy under different-waveband and the reflectivity collection of illustrative plates of silver-colored palladium-copper alloy.Wherein silver-colored palladium-copper alloy layer and silver-colored magnesium copper alloy layer adopt sputtering method to make equally, and both thickness is 120 nanometers.As seen from the figure, for the blue light of 450nm, the reflectivity of silver-colored magnesium copper alloy layer is 95.3%, and the reflectivity of silver-colored palladium-copper alloy layer is 92.1%; For the green-yellow light of 550nm, the reflectivity of silver-colored magnesium copper alloy layer is 97.1%, and the reflectivity of silver-colored palladium-copper alloy layer is 94.6%; For the ruddiness of 650nm, the reflectivity of silver-colored magnesium copper alloy layer is 97.9%, and the reflectivity of silver-colored palladium-copper alloy layer is 96.2%.From the wave band of wave band to 650 nanometer of 450 nanometers, the reflectivity of silver-colored magnesium copper alloy layer is all better than silver-colored palladium-copper alloy layer.
The invention still further relates to a kind of display unit, this display unit comprises multiple organic light emitting diode devices, comprising: substrate; Metal anode, is arranged on described substrate; Organic emission layer, is arranged on described metal anode; Transparent cathode, is arranged in described organic emission layer; And reflector, being arranged between described metal anode and described organic emission layer, described reflector is silver-colored magnesium copper alloy layer; And drive circuit, luminous for controlling described multiple organic light emitting diode device.In silver magnesium copper alloy layer, the preferred range of the percentage by weight of magnesium elements is 12%-19%, and in silver-colored magnesium copper alloy layer, the optimum range of the percentage by weight of magnesium elements is 14%-17%, and the preferred thickness range of this silver magnesium copper alloy layer is 80 nanometer to 150 nanometers.
The embodiment of display unit of the present invention and beneficial effect, with in the specific embodiment of above-mentioned organic light emitting diode device, describe same or similar, specifically refer to the specific embodiment of above-mentioned organic light emitting diode device.
In sum, organic light emitting diode device of the present invention and corresponding display unit are used magnesium metal to replace Metal Palladium to make alloy reflector, can greatly reduce the cost of manufacture in reflector; Silver-colored magnesium copper alloy layer can increase reliability, tolerance and the reflection efficiency in reflector as reflector simultaneously, and then has improved the light extraction efficiency of display unit.Solve the technical problem that cost of manufacture is higher, light extraction efficiency is lower of existing organic light emitting diode device and corresponding display unit.
In sum; although the present invention discloses as above with preferred embodiment; but above preferred embodiment is not in order to limit the present invention; those of ordinary skill in the art; without departing from the spirit and scope of the present invention; all can do various changes and retouching, the scope that therefore protection scope of the present invention defines with claim is as the criterion.
Claims (7)
1. an organic light emitting diode device, is characterized in that, comprising:
Metal anode;
Organic emission layer, is arranged on described metal anode;
Transparent cathode, is arranged in described organic emission layer; And
Reflector, is arranged between described metal anode and described organic emission layer,
Described reflector is silver-colored magnesium copper alloy layer;
Wherein, in described silver-colored magnesium copper alloy layer, the scope of the percentage by weight of magnesium elements is 12%-19%;
Described organic light emitting diode device also comprises and is arranged on the resilient coating on described transparent cathode and is arranged on the protective clear layer on described resilient coating;
Described resilient coating is used for making organic light emitting diode device flattening surface;
Described protective clear layer is for reducing the impact of the external environment that organic light emitting diode device is subject to.
2. organic light emitting diode device according to claim 1, is characterized in that, in described silver-colored magnesium copper alloy layer, the scope of the percentage by weight of magnesium elements is 14%-17%.
3. organic light emitting diode device according to claim 1, is characterized in that, the thickness range of described silver-colored magnesium copper alloy layer is 80 nanometer to 150 nanometers.
4. organic light emitting diode device according to claim 1, is characterized in that, described organic emission layer comprises blue organic emission layer, green organic emission layer and red organic emission layer.
5. a display unit, is characterized in that, comprising:
Multiple organic light emitting diode devices comprise:
Metal anode;
Organic emission layer, is arranged on described metal anode;
Transparent cathode, is arranged in described organic emission layer; And
Reflector, is arranged between described metal anode and described organic emission layer, and described reflector is silver-colored magnesium copper alloy layer; And
Drive circuit, luminous for controlling described multiple organic light emitting diode device;
Described organic light emitting diode device also comprises and is arranged on the resilient coating on described transparent cathode and is arranged on the protective clear layer on described resilient coating;
Described resilient coating is used for making organic light emitting diode device flattening surface;
Described protective clear layer is for reducing the impact of the external environment that organic light emitting diode device is subject to;
Wherein, in described silver-colored magnesium copper alloy layer, the scope of the percentage by weight of magnesium elements is 12%-19%.
6. display unit according to claim 5, is characterized in that, in described silver-colored magnesium copper alloy layer, the scope of the percentage by weight of magnesium elements is 14%-17%.
7. display unit according to claim 5, is characterized in that, the thickness range of described silver-colored magnesium copper alloy layer is 80 nanometer to 150 nanometers.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210239098.7A CN102760841B (en) | 2012-07-11 | 2012-07-11 | Organic light-emitting diode device and corresponding display device |
| PCT/CN2012/079158 WO2014008682A1 (en) | 2012-07-11 | 2012-07-25 | Organic light-emitting diode component and corresponding display device |
| US13/700,139 US9362529B2 (en) | 2012-07-11 | 2012-07-25 | OLED device and corresponding display apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210239098.7A CN102760841B (en) | 2012-07-11 | 2012-07-11 | Organic light-emitting diode device and corresponding display device |
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| Publication Number | Publication Date |
|---|---|
| CN102760841A CN102760841A (en) | 2012-10-31 |
| CN102760841B true CN102760841B (en) | 2014-11-26 |
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| CN201210239098.7A Expired - Fee Related CN102760841B (en) | 2012-07-11 | 2012-07-11 | Organic light-emitting diode device and corresponding display device |
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| Country | Link |
|---|---|
| US (1) | US9362529B2 (en) |
| CN (1) | CN102760841B (en) |
| WO (1) | WO2014008682A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US11600234B2 (en) | 2015-10-15 | 2023-03-07 | Ordos Yuansheng Optoelectronics Co., Ltd. | Display substrate and driving method thereof |
| WO2021035420A1 (en) * | 2019-08-23 | 2021-03-04 | 京东方科技集团股份有限公司 | Display panel and manufacturing method therefor, and display device |
| CN105185816A (en) | 2015-10-15 | 2015-12-23 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method, and display device |
| KR102188997B1 (en) * | 2017-02-28 | 2020-12-09 | 동우 화인켐 주식회사 | Transparent film antenna |
| CN115735244A (en) | 2019-08-23 | 2023-03-03 | 京东方科技集团股份有限公司 | Pixel circuit, driving method, display substrate, driving method and display device |
| CN112703604B (en) | 2019-08-23 | 2024-06-18 | 京东方科技集团股份有限公司 | Display device and method for manufacturing the same |
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| WO2014008682A1 (en) | 2014-01-16 |
| US9362529B2 (en) | 2016-06-07 |
| CN102760841A (en) | 2012-10-31 |
| US20150115224A1 (en) | 2015-04-30 |
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