CN102759507A - Emission rate determination method, emission rate determining apparatus, detecting method and detecting apparatus - Google Patents
Emission rate determination method, emission rate determining apparatus, detecting method and detecting apparatus Download PDFInfo
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- CN102759507A CN102759507A CN2012100314902A CN201210031490A CN102759507A CN 102759507 A CN102759507 A CN 102759507A CN 2012100314902 A CN2012100314902 A CN 2012100314902A CN 201210031490 A CN201210031490 A CN 201210031490A CN 102759507 A CN102759507 A CN 102759507A
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Abstract
The invention provides an emission rate determining method, an emission rate determining apparatus, a detecting method, and a detecting apparatus, with the purpose of determining the emission rate of a to-be-detected object without heating the to-be-detected object to a high temperature. The emission rate determining method comprises the following steps: infrared irradiation step for irradiating the first radioactivity infrared light upon the to-be-detected object, a determining step for determining the second radioactivity according to the reflected infrared light of the to-be-detected object that is irradiated by the infrared light, and a calculating step for calculating the emission rate of the to-be-detected object based on the first radioactivity and the second radioactivity.
Description
Technical field
The present invention relates to measure the emissivity assay method and the device of the emissivity of checking matter, and based on the inspection method and the device of the emissivity inspection checking matter of measuring.
Background technology
As technology in the past, have through the LASER HEATING checking matter, measure the technology (with reference to patent documentation 1) of emissivity based on the infrared light that radiates from the checking matter that heats.Use Fig. 8 explanation technology in the past.
Fig. 8 is the synoptic diagram of the emissivity determinator 100 of technology in the past.
Shine checking matter 105 from the laser of LASER Light Source 101 irradiations via collimation lens 102, polygon mirror (polygon mirror) 103, collector lens 104.Owing to the checking matter that is heated by laser radiation 105 radiates infrared light 106 along with temperature rises.The infrared light 106 of radiation incides infrared rays receiver 108 via infrared light sensitive lens 107.Control part 109 calculates the emissivity of checking matter 105 based on the infrared light that incides infrared rays receiver 108 106.
The emissivity determinator 100 of technology was measured the emissivity of checking matter 105 through heating checking matter 105 like this, in the past.
Patent documentation 1: the spy opens the 2004-294183 communique
But, in technology in the past, measure emissivity preferably for precision, need checking matter be heated to high temperature.For example, be under the situation of normal temperature of 300K in the temperature (room temperature) of checking matter surrounding environment, the temperature of checking matter is risen to about 800K.After like this checking matter being heated to high temperature, can produce fire damage to checking matter sometimes.
Summary of the invention
To this, the object of the present invention is to provide and can under the situation that checking matter is not heated to high temperature, carry out the emissivity assay method and the device of the mensuration of emissivity, and the inspection method and the device that have used this emissivity assay method and device.
To achieve these goals, emissivity assay method of the present invention is characterised in that and comprises: the infrared light irradiating step, checking matter is shone the infrared light of first radiant; Determination step is according to reflective infrared light measurement second radiant from the said checking matter that has shone said infrared light; And calculation procedure, calculate the emissivity of said checking matter based on said first radiant and said second radiant.
In addition, inspection method of the present invention is characterised in that and comprises: whether the inspection step is non-defective unit based on the emissivity inspection checking matter that uses emissivity assay method of the present invention to calculate.
In addition, emissivity determinator of the present invention is characterised in that and comprises: light source, shine the infrared light of first radiant to checking matter; Determination part is according to reflective infrared light measurement second radiant from the said checking matter that has shone said infrared light; And calculating part, calculate the emissivity of said checking matter based on said first radiant and said second radiant.
In addition, testing fixture of the present invention is characterised in that and comprises: whether inspection portion is non-defective unit based on the emissivity inspection checking matter that is calculated by emissivity determinator of the present invention.
The invention effect
According to emissivity assay method of the present invention and device, checking matter is not heated to high temperature, can carry out the mensuration of emissivity.
In addition,, can be based on the emissivity that checking matter is not heated to the checking matter of measuring under the situation of high temperature, carry out the inspection of checking matter according to inspection method of the present invention and device.
Description of drawings
Fig. 1 is the synoptic diagram of the emissivity determinator of embodiment 1.
Fig. 2 is the synoptic diagram of the energy of being measured by determination part under the situation of infrared light supply irradiation infrared light not in the embodiment 1.
Fig. 3 is the synoptic diagram of the energy of being measured by determination part of embodiment 1.
Fig. 4 is the process flow diagram of action of the emissivity determinator of expression embodiment 1.
Fig. 5 is the synoptic diagram of the emissivity determinator of embodiment 2.
Fig. 6 is the synoptic diagram of the testing fixture of embodiment 3.
Fig. 7 is the process flow diagram of action of the testing fixture of expression embodiment 3.
Fig. 8 is the synoptic diagram of emissivity determinator in the past.
Symbol description:
1, emissivity determinator; 2, checking matter; 3, transfer path; 4, thermometer; 6, infrared light supply; 7, Infrared Lens; 8, determination part; 9, calculating part; 10, irradiated area; 11, determined zone; 12, emissivity determinator; 13, calculating part; 14, testing fixture; 15, inspection portion; 16, display part.
Embodiment
Below, with reference to emissivity assay method, emissivity determinator, inspection method and the testing fixture of description of drawings embodiment of the present invention.
(embodiment 1)
Fig. 1 is the synoptic diagram of the emissivity determinator 1 of embodiment 1.
Checking matter 2 is that width (Y direction of Fig. 1) is 12.8mm as an example here, and thickness (Z-direction) is 500 μ m, and length (X-direction) is the strap-like objects of 100m.
Optical splitter 5 is examples of the device of irradiation directly over making from first infrared light of infrared light supply 6 irradiation from checking matter 2.In addition, optical splitter 5 also has first infrared light that makes by checking matter 2 reflections and sees through with second infrared light that radiates from checking matter 2, and injects the function of determination part 8.As the material of optical splitter 5, for example use germanium, sulfide, zinc selenide etc.Here, as an example, the reflectivity of supposing optical splitter 5 is 50%.
In embodiment 1,, use the determination part 8 that wavelength 2～12 μ m is had sensitivity, so infrared light supply 6 adopts the only light source of the infrared light of illumination wavelength 2～12 μ m as an example.In the case, as an example, the black matrix light source of component temperature 800K, output 23mW, centre wavelength 2.8 μ m is used for infrared light supply 6.The black matrix light source here as an example, is the light-emitting component with the emissivity more than 0.95 in the scope of wavelength 2～12 μ m, produces the device of blackbody radiation frequency spectrum through the heating light-emitting component.Infrared light supply 6 uses the reason of black matrix light source to describe in the back.
In addition, also can replace the black matrix light source, use Halogen lamp LED, tungsten lamp etc. as infrared light supply 6.But, though the light of output wavelengths such as Halogen lamp LED 2～12 μ m, the light of wavelength in addition also shines checking matter 2.Under the situation of the light of the wavelength beyond the sensitivity of this infrared light supply 6 irradiated with measurement portions 8; For the temperature that prevents checking matter 2 rises, be preferably in to dispose between infrared light supply 6 and the checking matter 2 and only make determination part 8 have the long pass filter filter elements such as (long pass filter) of light transmission of the wavelength of sensitivity.
In following explanation, the irradiation area of first infrared light that infrared light supply 6 is sent is designated as the irradiated area 10 of first infrared light of checking matter 2.
Measuring element as determination part 8; For example can use as the actinometry infrared light; Utilize the photoelectric type element of photoelectric effect output and the corresponding electric signal of energy, perhaps measure infrared light, the temperature rising of element is transformed to the pattern of fever detecting element of electric signal as heat energy.For example,, use silicon, germanium, indium antimony (InSb), mercury cadmium telluride etc.,, use thermoelectric pile (thermopile), burnt electric device etc. as the pattern of fever detecting element as the photoelectric type element.
In embodiment 1, as an example, the measuring element of determination part 8 uses the photoelectric type element by the two dimension array type of the InSb element formation of the infrared light (2～12 μ m are had sensitivity) of the wavelength that can detect 2～12 μ m.It is 640 pixels on Y direction that this measuring element uses pixel count, is 480 pixels on the X-direction, and pel spacing is the element of 20 μ m.
In following explanation, the mensuration zone of second radiant that will be measured by determination part 8 is designated as determined regional 11 of checking matter 2.
The multiplying power of Infrared Lens 7 is by the pixel count decision of irradiated area 10 with the measuring element of determination part 8.When the pel spacing of the measuring element of determination part 8 was 20 μ m as stated, for example, if making the multiplying power of Infrared Lens 7 is 1 times, then the size in the mensuration of determination part 8 zone (determined regional 11) was 12.8mm on Y direction, is 9.6mm on X-direction.In addition, if making the multiplying power of Infrared Lens 7 is 2 times, then determined regional 11 size is 6.4mm on Y direction, is 4.8mm on X-direction.
Calculating part 9 is made up of input interfaces such as image displaying parts such as display, CPU, hard disk, mouse, keyboards as an example.The computer program that is used to calculate emissivity is installed on this hard disk.
In addition, the data of second radiant of measuring in calculating part 9 each pixel based on the measuring element of determination part 8 are carried out the calculating of the emissivity of each pixel, calculate the distributed data of the emissivity in determined regional 11.
In addition, the transfer rate of transfer path 3 is by the speed decision of the emissivity calculating of calculating part 9.In embodiment 1, as an example, can measure in during 1ms 9.6mm on 12.8mm on the Y direction, the X-direction determined regional 11 in emissivity.Therefore, can checking matter 2 be transmitted 9.6mm in during 1ms.That is, the transfer rate of transfer path 3 is 9.6m/ second.
In embodiment 1, first infrared light that preferably is set at from infrared light supply 6 shines determined regional 11 integral body.Its reason is described.
In determined regional 11, if there is the zone of not shining infrared light, then the radiant from this area test significantly diminishes.On the other hand, in reflects infrared light not but almost all absorb the zone of infrared light, under the situation that promptly the higher zone of emissivity exists, also significantly diminish from the radiant of this area test.
Therefore, under the remarkable less situation of the value of the radiant of in the specific region, measuring, be difficult to sometimes judge in this specific region and do not shine infrared light, or the emissivity of this specific region is higher.
To this, in embodiment 1, be designed to infrared light and shine determined regional 11 whole zone.This is because under the remarkable less situation of the radiant of in the specific region, measuring, confirm that uniquely the emissivity of this specific region is higher.
Particularly, regulate infrared light supply 6, Infrared Lens 7, make determined regional 11 all to include the inboard of irradiated area 10 in, then can first infrared light be shone determined regional 11 whole zone.
In addition, from the infrared light of infrared light supply 6 irradiations, the infrared light that shines the irradiated area 10 that is positioned at determined regional 11 outsides is not injected determination part 8, and therefore the mensuration to radiant does not contribute.In addition, infrared light-struck zone is sometimes owing to the influence of infrared light is risen temperature.That is the useless energy that the temperature that only causes checking matter 2 of becoming the infrared light that, shines determined regional 11 outsides sometimes rises.
To this, in embodiment 1, make big or small consistent even more ideal (in Fig. 1,, the describing irradiated area 10 bigger) of determined regional 11 size and irradiated area 10 than determined regional 11 for the ease of explanation.In view of the above, can prevent that infrared light from shining the place beyond determined regional 11, obtain the effect of the temperature rising that suppresses checking matter 2 better.In addition, also can be between infrared light supply 6 and checking matter 2, newly-increased configuration Infrared Lens perhaps disposes long pass filter with the zone of restriction through infrared light to regulate focal point, thus the size of regulating irradiated area 10.
Then, use Fig. 2, Fig. 3 explanation to calculate from the principle of the emissivity of the checking matter 2 of infrared light supply 6 irradiations first infrared light by the calculating part 9 of emissivity determinator 1.
At first, use Fig. 2 explanation not under the situation of 6 pairs of checking matters of infrared light supply, 2 irradiations, first infrared light, according to the method for the energometry emissivity that detects by determination part 8.
Checking matter 2 radiation and the corresponding infrared lights of temperature, at this moment, can be from the radiant E1 of the infrared light of checking matter 2 radiation according to Stefan-Boltzman's law (Stefan-Boltzmann law) with (numerical expression 1) expression.
[numerical expression 1]
E1=ε σ Ta
4(numerical expression 1)
In (numerical expression 1), σ is Si Difen-Boltzmann constant, and ε is the emissivity of checking matter 2, and Ta is the temperature (absolute temperature) of checking matter 2.The energy that second infrared light that radiates from checking matter 2 has is equivalent to this radiant E1.
The corresponding infrared light of temperature (environment temperature Tr) of same radiation in the space (environment) around the checking matter 2 and environment.Hypothesis from the energy of the infrared light of this environmental radiation be environmental radiation can the situation of Q1 under, environmental radiation can Q1 (numerical expression 2) expression below can be enough.
[numerical expression 2]
Q1=σ Tr
4(numerical expression 2)
Checking matter 2 also can carry out the radiation of radiant E2 by Q1 through reflecting from the environmental radiation of environment except from the radiant E1 that self radiates.At this moment, according to kirchhoff (Kirchhoff) law, the reflectivity of checking matter 2 representes that with 1-ε radiant E2 can enough following (numerical expression 3) expression.
[numerical expression 3]
E2=(1-ε) Q1 (numerical expression 3)
The energy that has from first infrared light of environmental radiation is equivalent to environmental radiation can Q1, and the energy that is had by first infrared light of checking matter 2 reflections is equivalent to radiant E2.
In determination part 8, measure radiant E1 and radiant E2 simultaneously.Radiant E1 that is measured by determination part 8 and radiant E2 lump together and become the second radiant Q2.At this moment, radiant Q2 is with following (numerical expression 4) expression.In addition, can't measure radiant E1 and radiant E2 respectively by determination part 8.
[numerical expression 4]
Q2=E1+E2 (numerical expression 4)
According to (numerical expression 1)～(numerical expression 4), can derive following (numerical expression 5).
[numerical expression 5]
Q2=E1+ (1-ε) Q1=ε σ Ta
4+ σ (1-ε) Tr
4=σ (ε (Ta
4-Tr
4)+Tr
4) (numerical expression 5)
Can know that according to (numerical expression 5) the emissivity ε of checking matter 2 obtains according to the second radiant Q2 that measures, the temperature T a and the environment temperature Tr of checking matter 2.
In the case, according to (numerical expression 5), do not have at the temperature T a of environment temperature Tr and checking matter 2 under the state (Ta=Tr) of temperature difference, the second radiant Q2 of mensuration becomes σ Ta
4(or σ Tr
4), therefore can't calculate the emissivity ε of checking matter 2.Therefore, the emissivity ε in order to measure checking matter 2 according to the second radiant Q2 must be provided with temperature difference between the temperature T a of environment temperature Tr and checking matter 2.
In addition, can know that the temperature difference between the temperature T a of environment temperature Tr and checking matter 2 is big more, then can precision obtain emissivity ε more goodly from (numerical expression 5).The inventor finds that as experimental result after temperature difference was set to more than the 500K, the mensuration precision of emissivity ε further improved.
Under the situation of using emissivity determinator 100 in the past shown in Figure 8, between the temperature T a of environment temperature Tr and checking matter, temperature difference is set through the heating checking matter.At this moment, be under the situation of 300K of normal temperature at environment temperature Tr, use emissivity determinator 100 in the past, obtain emissivity ε preferably for precision, the temperature T a that must make checking matter is more than the 800K.
But, if make the temperature T a of checking matter be warming up to 800K, be under the situation of the not good material of thermotolerance then at checking matter, the fire damage of checking matter is become problem.
In addition, different according to the thermal capacitance of the material of checking matter, exist the temperature T a that makes checking matter to rise to the problem that 800K needs long heat time heating time.
And then different according to the material of checking matter, emissivity ε has temperature dependency sometimes.In the case, ε changes along with temperature rising emissivity, and existence can't correctly obtain the problem of the emissivity ε of checking matter 2.
In view of such problem, problem, the emissivity determinator 1 of Fig. 1 of embodiment 1 provides the heating of carrying out checking matter 2 hardly, and the method for temperature difference is set between the temperature T a of environment temperature Tr and checking matter 2.Particularly, adopt from infrared light supply 6 irradiations first infrared light, the method that environment temperature Tr simulation is heated up.
Use Fig. 3 that the emissivity method for measuring of emissivity determinator 1 is described.
Can know that from (numerical expression 2) if environment temperature Tr rises, then the environmental radiation from first infrared light of environmental radiation can become big by Q1.To this, use infrared light supply 6 to increase the environmental radiation ability Q1 of first infrared light of irradiation checking matter 2.Because the Boltzmann constant σ of (numerical expression 2) is a constant, so can think that environmental radiation can the Q1 increase be equal to environment temperature Tr rising.
For example, be about at environment temperature Tr under the situation of 800K, according to (numerical expression 2), from the environmental radiation of the about 23224W of environmental radiation can Q1 first infrared light.On the other hand, do not make environment temperature Tr in fact rise to about 800K, but under the situation of first infrared light of 6 pairs of checking matters of infrared light supply 2 irradiation 23224W, as far as checking matter 2, we can say with the environment that is configured in about 800K under situation identical.
That is, the emissivity determinator 1 of embodiment 1 has first infrared light of the energy that only under very high environment temperature Tr, just can shine originally from infrared light supply 6 irradiations.In view of the above, can produce with the environment that checking matter 2 is placed very high environment temperature Tr under the identical situation of situation.In other words, be equivalent to first infrared light that environmental radiation under the hot environment can Q1, environment temperature Tr simulation ground is risen by infrared light supply 6 irradiation.
As stated, the emissivity determinator 1 of embodiment 1 can be provided with the temperature difference of simulation between the temperature T a of the environment temperature Tr of (numerical expression 5) and checking matter 2, carry out the calculating of the emissivity ε of checking matter 2.In following explanation, the environment temperature of utilizing emissivity determinator 1 simulation to rise is designated as Trp.
Sometimes on checking matter 2, except from infrared light supply 6 with corresponding first infrared light of environment temperature Trp simulation, also incident and the actual corresponding infrared light of environment temperature Tr.In order to prevent this situation, preferably from the comprehensive irradiation of checking matter 2 first infrared light from infrared light supply 6.But, be equivalent to the environment temperature Trp infrared light of irradiation down below the above 5000K of 800K from first infrared light of infrared light supply 6 irradiation, therefore can ignore with 300K about the influence of the corresponding infrared light of environment temperature Tr of room temperature range.That is, be under the situation of first radiant at energy from first infrared light of infrared light supply 6 irradiation, can this first radiant be regarded as can Q1 to the environmental radiation of checking matter 2 radiation from environment.In view of the above, can delete the item of the actual environment temperature T r of (numerical expression 5), (numerical expression 6) below deriving.
[numerical expression 6]
Q2=ε σ Ta
4+ (1-ε) σ Trp
4(numerical expression 6)
According to this (numerical expression 6), emissivity determinator 1 can calculate the emissivity ε of checking matter 2.
In addition, the ε σ Ta on (numerical expression 6) the right
4Item expression from the radiant E1 of second infrared light of checking matter 2 radiation, (1-ε) σ Trp
4Item expression by the radiant E2 of first infrared light of checking matter 2 reflections.The energy of above-mentioned first infrared light and second infrared light (being reflects infrared light) with become the energy of injecting determination part 8, the i.e. second radiant Q2.
In addition, (1-ε) σ Trp
4The item in σ Trp
4Expression as previously mentioned, can be regarded first radiant of first infrared light that shines from infrared light supply 6 as environmental radiation and can calculate by Q1 from the environmental radiation ability Q1 of environmental radiation.At this moment, satisfy the relation of (numerical expression 2) from first radiant of first infrared light of infrared light supply 6 irradiation (environmental radiation can Q1) and the environment temperature Trp of simulation.
In addition, with the corresponding ε σ of the radiant E1 Ta of second infrared light
4The temperature T a of the checking matter 2 obtained by thermometer 4 through substitution of item, can become the item that unknown number is merely emissivity ε.
Here, the emissivity assay method of emissivity determinator 1 is concluded.
Behind first infrared light of infrared light supply 6 irradiations first radiant; In determination part 8, incident will be by checking matter 2 first infrared light that reflects and second infrared light that radiates from checking matter 2 (will be lumped together as reflects infrared light with second infrared light that radiates from checking matter 2 by first infrared light of checking matter 2 reflections).Determination part 8 does not carry out the difference of first infrared light and second infrared light of incident, measures as the second radiant Q2 that the two has been carried out add up to, and the value of measuring is exported to calculating part 9.At this moment, thermometer 4 is obtained the temperature T a of checking matter 2, and the temperature T a that obtains is exported to calculating part 9.In addition, measure in advance from first radiant of first infrared light of 6 pairs of checking matters of infrared light supply, 2 irradiations, and be stored in the calculating part 9.First radiant that calculating part 9 will be stored in advance regards that environmental radiation can Q1 as.And calculating part 9 will be regarded first radiant of environmental radiation ability Q1, the second radiant Q2 of input and the temperature T a substitution (numerical expression 6) of input as, calculate the emissivity ε of checking matter 2 thus.
Like this, utilize emissivity determinator 1,, can when the temperature that suppresses checking matter 2 rises, calculate the emissivity ε of checking matter 2 thus from 6 pairs of checking matters of infrared light supply, 2 irradiations, first infrared light.
In embodiment 1, the temperature T a of checking matter 2 and environment temperature Tr are much at one.This be because, because emissivity determinator 1 makes the temperature T a of checking matter 2 and the environment temperature Tr of surrounding environment thereof change hardly, so the temperature T a of checking matter 2 is in thermal equilibrium state with its environment temperature Tr on every side in embodiment 1.Therefore, in embodiment 1, can measure environment temperature Tr by serviceability temperature meter 4, and with the temperature T a of the environment temperature Tr that measures as checking matter 2.Compare with the temperature T a of the checking matter 2 that in transfer path 3, transmits; The environment temperature Tr of checking matter 2 surrounding environment can be more prone to and correctly measure; Therefore in embodiment 1; Compare with the situation of the temperature T a of direct mensuration checking matter 2, can be more prone to and correctly measure the temperature T a of checking matter 2.
Use the reason of black matrix light source to describe to infrared light supply 6 here.
The light-emitting component of infrared light supply 6 is through being heated corresponding first infrared light of temperature of irradiation and light-emitting component.In the case, the temperature of light-emitting component and first radiant from first infrared light of light-emitting component irradiation not necessarily satisfy the relation (with the Tr of the temperature substitution (numerical expression 2) of light-emitting component, can Q1 with the first radiant substitution environmental radiation) of (numerical expression 2).This is because (numerical expression 2) is the condition of in black matrix, setting up.
So-called black matrix is meant the object (emissivity ε is 1) that can all wavelengths from the infrared light of outside incident absorbed fully and emit, but does not have black matrix completely in the reality.Certainly, general light source is not a black matrix.Therefore, the temperature of light-emitting component and the relation that does not satisfy (numerical expression 2) from first radiant of infrared light supply 6 radiation, also inconsistent with environment temperature Trp.That is, using and the light source of non-black-body is measured under the situation of emissivity ε of checking matter 2,, then can't obtain to regard as the energy that environment can Q1 if practical measurement is not from first radiant of first infrared light of infrared light supply 6 irradiations.
To this, in embodiment 1, infrared light supply 6 uses the black matrix light source.The black matrix light source is that the simulation black matrix is made, and its emissivity ε can be near 1.The emissivity ε of the black matrix light source that uses in the embodiment 1 is 0.95, can the emissivity ε of light source be regarded as to be roughly 1.Along with emissivity ε near 1, the temperature of light-emitting component and from more strictly setting up the relation of (numerical expression 2) between first energy of first infrared light of black matrix light source irradiation.Therefore, the temperature of the light-emitting component through measuring (settings) black matrix light source can be calculated the value of first radiant according to (numerical expression 2), and in addition, the temperature of light-emitting component can be handled as the environment temperature Trp that simulates.For the above reasons, infrared light supply 6 can easily be measured the emissivity ε of checking matter 2 through using the black matrix light source.But, under the situation of inspection to the not high object of mensuration accuracy requirement, infrared light supply 6 also can not use the black matrix light source.
Then, the action of the emissivity mensuration of the emissivity determinator 1 of flowchart text Fig. 1 of use Fig. 4.
In step 1, utilize the transmission of transfer path 3 beginning checking matters 2.
In step 2, utilize thermometer 4 to obtain the temperature T a of checking matter 2.In embodiment 1, measure the room temperature (environment temperature Tr) in the room of placing checking matter 2, obtain the room temperature (temperature obtains step) of mensuration as the temperature T a of checking matter 2.In addition, step 2 also can after carry out before the step 5 stated, need not one fix between step 1 and the step 3 and carry out.
In step 3, from first infrared light of infrared light supply 6 to checking matter 2 irradiation (Trp is corresponding with environment temperature) first radianies.In addition, the environment temperature Trp that first radiant and this energy are corresponding is stored in the hard disk of calculating part 9 in advance.
In step 4,, measure the second radiant Q2 by determination part 8 detection of reflected infrared lights.The signal of the second radiant Q2 that measures is exported to calculating part 9.
In step 5; By the computer program of calculating part 9 based on the second radiant Q2 of input, with from the first infrared light corresponding simulated environment temperature T rp of infrared light supply 6 and the temperature T a of checking matter 2 (the environment temperature Tr that measures by thermometer 4), calculate the emissivity ε (calculation procedure) of checking matter 2 according to (numerical expression 6).
For example, suppose the temperature T a=300K of checking matter 2, from the simulated environment temperature T rp=800K of first infrared light of infrared light supply 6 irradiation (environmental radiation can Q1=23224W), the second radiant Q2=20947W that measures by determination part 8.In the case, according to (numerical expression 6), (numerical expression 7) below ability is enough calculates the emissivity ε of checking matter 2.
[numerical expression 7]
20947=300
4σ ε+800
4σ (1-ε) (numerical expression 7)
At Si Difen-Boltzmann constant σ is under the situation of following (numerical expression 8), according to (numerical expression 7), can access the emissivity ε ≈ 0.1 of checking matter 2.
[numerical expression 8]
σ=5.67 * 10
-8(numerical expression 8)
In step 6, whether judged to the whole surface measurements of checking matter 2 emissivity ε.Algorithm during judgement for example is based on the size, transfer rate of checking matter 2 and from the time that mensuration begins, measures the algorithm of the judgement that whether finishes.This algorithm is stored in the calculating part 9 in advance.Be judged to be by calculating part 9 under (" denying " in the step 6), return step 4 to the unclosed situation of calculating of the emissivity ε on the whole surface of checking matter 2.Under the situation that the calculating that is judged to be the emissivity ε on the whole surface of checking matter 2 has finished (" being " in the step 6), get into step 7.
In step 7, finish irradiation to first infrared light of checking matter 2.
In step 8, the transmission of the checking matter 2 that finishes to be undertaken by transfer path 3.In addition, step 7 and step 8 can be carried out simultaneously, also can carry out steps 8 earlier, after carry out step 7.
Utilize step 1 to the step 8 of above-mentioned Fig. 4, the emissivity determinator 1 of Fig. 1 calculates the emissivity ε on the whole surface of checking matter 2, finishes its action.
As stated, emissivity determinator 1 makes the temperature T a of checking matter 2 and actual environment temperature Tr rise hardly, thereby less to the fire damage of checking matter 2 generations.In addition, the value of the environment temperature Trp that simulation is risen is restriction not, and is different according to the kind of infrared light supply 6, can make simulated environment temperature T rp rise to 5000K.In view of the above, can under the situation of following actual temperature to rise hardly, increase the temperature difference of the temperature T a of environment temperature Trp and checking matter 2, can precision obtain the emissivity ε of checking matter 2 preferably.
In addition, need not the corresponding heat time heating time of thermal capacitance with the material of checking matter 2, be i.e. temperature stand-by period of rising, therefore measure on this point comparatively favourable can carrying out high speed.
In addition, the temperature T a of checking matter 2 is risen,, also can carry out the higher emissivity of precision and measure even therefore have under the temperature dependent situation at emissivity ε.
In addition, in embodiment 1,, prevent to be not used in the irradiation of useless infrared light of the mensuration of emissivity ε through making irradiated area 10 and determined regional 11 equal and opposite in direction.In addition, after checking matter 2 heated up, the environment temperature Tr (Trp) of (numerical expression 6) diminished with the difference of the temperature T a of checking matter 2, became the reason of the precision reduction of emissivity mensuration.From this viewpoint, prevent that the intensification of checking matter 2 from also being useful to improving precision.
In addition, though irradiated area 10 than determined regional 11 big or small big situation under, compare with the emissivity determinator 100 in the past of Fig. 8, also can predict the temperature that reaches enough low.Therefore, though irradiated area 10 than determined regional 11 big or small big situation under, and compared in the past, also can when the temperature that prevents checking matter 2 rises, measure the emissivity ε of checking matter 2.
In the step 5 of Fig. 4, the method for the environment temperature Trp that uses simulation being obtained the emissivity ε of checking matter 2 is illustrated.But, also can replace the environment temperature Trp that simulates, use from the first radiant Q1 of first infrared light of 6 pairs of checking matters of infrared light supply, 2 irradiations, obtain the emissivity ε of checking matter 2.In the case, (numerical expression 9) that utilization obtains after (numerical expression 5) is out of shape calculates emissivity ε by calculating part 9.
[numerical expression 9]
Q2=E1+ (1-ε) Q1=σ ε Ta
4+ Q1 (1-ε) (numerical expression 9)
In addition; Measuring element in the determination part 8 has adopted the photoelectric type element of two dimension array type; But being not limited thereto, also can be to have made up the line sensor of one dimension or the element of simple eye measuring element and scanning mechanisms such as oscillating mirror (galvanometer mirror), polygon mirror and resonance scanner.
(embodiment 2)
In embodiment 1, the temperature T a (environment temperature Trp) of the checking matter 2 that calculating part 9 uses of Fig. 1 obtain has calculated the emissivity ε of checking matter 2.
In embodiment 2, explain under the situation of the temperature T a that does not obtain checking matter 2, calculate the method for the emissivity ε of checking matter 2.
Fig. 5 is the synoptic diagram of the emissivity determinator 12 of embodiment 2.From the emissivity determinator 1 of Fig. 1, having removed thermometer 4 device afterwards is the emissivity determinator 12 of Fig. 5.In addition, it is different to calculate the method for emissivity ε in the calculating part 9 of the calculating part 13 of Fig. 5 and Fig. 1.Other structures are identical with embodiment 1.
Below the computing method of the emissivity ε of the calculating part 13 of Fig. 5 are described.
The inventor finds, between the environment temperature Trp of the temperature T a of checking matter 2 and simulation, exists under the situation of the temperature difference more than the 500K, and precision is obtained the emissivity ε of checking matter 2 preferably.Therefore, in order to measure the emissivity ε of checking matter 2 accurately, making environment temperature Trp is high temperature, and bigger temperature difference is set between the two energetically.Therefore, in embodiment 2, the temperature T a of checking matter 2 compares obviously very little with the environment temperature Trp of simulation.Therefore, based on (numerical expression 6), the second radiant Q2 can use following (numerical expression 10) approximate.
[numerical expression 10]
Q2 ≈ (1-ε) σ Trp
4=(1-ε) Q1 (numerical expression 10)
Based on this (numerical expression 10), calculating part 13 calculates the emissivity ε of checking matter 2 according to first radiant and the second radiant Q2 that regard environmental radiation ability Q1 as.At this moment, first radiant is stored in the calculating part 13 in advance, and the second radiant Q2 is input in the calculating part 13 after utilizing determination part 8 to measure.
That is, in the step 5 (calculation procedure) of Fig. 4, calculating part 13 calculates the emissivity ε of checking matter 2 only based on the first radiant Q1 and the second radiant Q2.
In view of the above, emissivity determinator 12 can calculate the emissivity ε of checking matter 2 under the situation of the temperature T a that does not measure checking matter 2.Therefore, the processing in the calculating part 13 can be more promptly carried out, the high speed of processing can be realized measuring.In addition, need not to comprise thermometer, miniaturization that therefore can implement device.
In addition, after the temperature difference between the environment temperature Trp of the temperature T a of checking matter 2 and simulation was greater than 5000K, the possibility that checking matter 2 is produced fire damages became big.Therefore, it is above and below the 5000K that inventor's temperature difference of proposing the two should be 500K.Condition when this temperature difference is set can access following (numerical expression 11) according to (numerical expression 2).Through be equivalent to from infrared light supply 6 irradiation to satisfy should (numerical expression 11) environmental radiation can Q1 first infrared light of first radiant, use above-mentioned (numerical expression 10) also can precision to measure the emissivity ε of checking matter 2 preferably.
[numerical expression 11]
σ (Ta+500)
4≤Q1≤σ (Ta+5000)
4(numerical expression 11)
In addition, calculate the first such radiant Q1 in advance, and be set in the infrared light supply 6.
In addition, through be equivalent to from infrared light supply 6 irradiation to satisfy should (numerical expression 11) environmental radiation can Q1 first infrared light of first radiant, also can precision in embodiment 1 measure the emissivity ε of checking matter 2 preferably.
(embodiment 3)
The emissivity determinator 1 of emissivity ε of the mensuration checking matter 2 of Fig. 1 has been described in embodiment 1.In embodiment 3, explain and use emissivity determinator 1 to carry out the whether testing fixture 14 of the inspection of non-defective unit of checking matter 2.
The synoptic diagram of testing fixture shown in Fig. 6 14.
In inspection portion 15,, set the minimum value ε of the emissivity ε that allows as checking matter 2 in advance as the emissivity ε of non-defective unit
MinWith maximal value ε
MAXBased on the value of setting, inspection portion 15 carries out the inspection of checking matter 2.Particularly, under the situation of (numerical expression 12) below the emissivity ε of the checking matter that calculates 2 satisfies, checking matter 2 is judged to be non-defective unit, under the situation that does not satisfy (numerical expression 12), is judged to be defective products.
[numerical expression 12]
ε
Min≤ε≤ε
MAX(numerical expression 12)
The inspection method of the checking matter 2 of inspection portion 15 then, is described.Here, checking matter 2 is a pottery as an example.
Whether include in through the emissivity ε that in determined regional 11 whole zone, calculates in the scope of the non-defective unit of storing in advance, carry out whether good inspection.As the bad reason of checking matter 2, consider to have sneaked into foreign matter with checking matter 2 unlike materials.
Enumerating the situation of having sneaked into the foreign matter of copper in the ceramic checking matter 2 here, is that example is described below.
Generally speaking, metal shows the emissivity lower than pottery.The emissivity ε of the copper of supposing to be measured by emissivity determinator 1 is 0.1.At emissivity ε is that 0.1 copper has been sneaked under determined regional 11 the situation, and emissivity determinator 1 detects emissivity ε in determined regional 11 be 0.1 zone.0.1 value be the extraneous value of storage in advance in the inspection portion 15, so inspection portion 15 is judged to be defective products as check result with checking matter 2, makes display part 16 show these check results.Like this, carry out the inspection of checking matter 2.
Here, the inspection action of the testing fixture 14 of flowchart text Fig. 6 of use Fig. 7.Omit explanation with the common action of the action of the emissivity determinator 1 of embodiment 1 here.
In step 10, carry out based on the emissivity ε that calculates whether checking matter 2 is the inspection (inspection step) of non-defective unit by inspection portion 15.As an example, utilize value that inspection portion 15 judges the emissivity ε that calculates whether in predefined scope here.Under being judged to be the situation of value in predefined scope of the emissivity ε that calculates (" being " in the step 10), get into step 6.The value that is judged to be the emissivity ε that calculates not (" denying " in the step 10) under the situation in predefined scope, get into step 11.
In step 11, it is that defective products is the demonstration of the warning of purport that display part 16 carries out with checking matter 2, subsequently, gets into step 7.
In the above described manner, testing fixture 14 carries out the inspection of checking matter 2.
Then, enumerating the situation of having sneaked into the foreign matter of cotton fiber in the ceramic checking matter 2 is that example is described below.
Generally speaking, organic compound (is cotton fiber as an example) shows the emissivity higher than pottery.The emissivity ε of the cotton fiber of supposing to be measured by emissivity determinator 1 is 0.8.At this emissivity ε is that 0.8 cotton fiber has been sneaked under determined regional 11 the situation, and emissivity determinator 1 detects emissivity ε in determined regional 11 be 0.8 zone.0.8 value be the extraneous value of storage in advance in the inspection portion 15, so inspection portion 15 is judged to be defective products as check result with checking matter 2.
At checking matter 2 is under the situation of electronic component, if metals such as copper are sneaked into as foreign matter, then becomes the reason of short circuit.But,, can not become the reason of short circuit even organic compounds such as cotton fiber are sneaked into checking matter 2 as foreign matter yet.Need not the checking matter of having sneaked into the cotton fiber that can not become the short circuit reason 2 be treated as defective products.That is,, then cause the problem that detects of crossing that non-defective unit also is judged to be defective products sometimes if the allowed band of the emissivity ε that will meet with ceramic phase is set in the inspection portion 15.
To this, under the situation of the possibility that exists the cotton fiber foreign matter to sneak into, the scope as the non-defective unit of storage in the inspection portion 15 makes ε
MinBe 0.5, ε
MAXBe 1.That is, under the situation of the emissivity ε less than 0.5 that is calculated by calculating part 9 (calculation procedure), inspection portion 15 (inspection step) is judged to be has sneaked into metallic foreign body, is judged to be checking matter 2 bad.Like this, do not make the scope of non-defective unit consistent, set the scope that becomes the emissivity ε of non-defective unit as product with the material of checking matter 2.
In the above described manner, testing fixture 14 can calculate the emissivity ε of checking matter 2 when the temperature that suppresses checking matter 2 rises, and the emissivity ε based on calculating carries out the inspection of checking matter 2.
And then, be consistent through kind with checking matter 2, will be stored in advance in the inspection portion 15 as the scope of the emissivity of non-defective unit, can carry out the inspection of checking matter 2 accurately.
In addition, also can replace the emissivity determinator 1 of embodiment 1, in the testing fixture 14 of embodiment 3, use the emissivity determinator 2 of embodiment 2.
In addition, through any embodiment in the above-mentioned various embodiments of appropriate combination, can receive the effect that has separately.
Be associated with embodiment with reference to accompanying drawing and put down in writing the present invention fully, and can know various distortion or correction to those skilled in the art.Be to be understood that such distortion or revise short ofly breaks away from, and just is included in the scope of the present invention from the scope of the present invention that is defined by the claims.
Utilize possibility on the industry
The present invention can be applicable to the electric equipment element that is difficult to heat, the emissivity mensuration and the inspection of circuit substrate.
Claims (16)
1. emissivity assay method is characterized in that comprising:
The infrared light irradiating step is shone the infrared light of first radiant to checking matter;
Determination step is according to reflective infrared light measurement second radiant from the said checking matter that has shone said infrared light; And
Calculation procedure is calculated the emissivity of said checking matter based on said first radiant and said second radiant.
2. emissivity assay method according to claim 1 is characterized in that comprising:
Temperature obtains step, obtains the temperature of said checking matter;
Said calculation procedure is based on the emissivity of said first radiant, said second radiant and the said checking matter of said temperature computation.
3. emissivity assay method according to claim 2 is characterized in that comprising:
Said temperature obtains the environment temperature of the said checking matter surrounding environment of step measurements, and the said environment temperature that will measure obtains as the said temperature of said checking matter.
4. according to each described emissivity assay method in the claim 1～3, it is characterized in that:
At said first radiant is Q1, and the temperature of said checking matter is Ta [K], and Si Difen-Boltzmann constant is under the situation of σ, the condition of (formula 1) below satisfying:
σ (Ta+500)
4≤Q1≤σ (Ta+5000)
4(formula 1).
5. according to each described emissivity assay method in the claim 1～3, it is characterized in that:
The irradiated area of said first infrared light of said checking matter equates with the determined zone of said second radiant of said checking matter.
6. according to each described emissivity assay method in the claim 1～3, it is characterized in that:
The irradiated area of said first infrared light of said checking matter equates with the determined zone of said second radiant of said checking matter,
At said first radiant is Q1, and the said temperature of said checking matter is Ta [K], and Si Difen-Boltzmann constant is under the situation of σ, the condition of (formula 1) below satisfying:
σ (Ta+500)
4≤Q1≤σ (Ta+5000)
4(formula 1).
7. inspection method is characterized in that comprising:
Whether the inspection step is non-defective unit based on the emissivity inspection checking matter that uses the described emissivity assay method of claim 6 to calculate.
8. inspection method according to claim 7 is characterized in that:
Said inspection step is judged to be said checking matter bad under the situation of the said emissivity less than 0.5 that calculates.
9. emissivity determinator is characterized in that comprising:
Light source shines the infrared light of first radiant to checking matter;
Determination part is according to reflective infrared light measurement second radiant from the said checking matter that has shone said infrared light; And
Calculating part calculates the emissivity of said checking matter based on said first radiant and said second radiant.
10. emissivity determinator according to claim 9 is characterized in that comprising:
Temperature obtains portion, obtains the temperature of said checking matter;
Said calculating part calculates the emissivity of said checking matter based on said first radiant, said second radiant and said temperature.
11. emissivity determinator according to claim 10 is characterized in that:
The said temperature portion of obtaining measures the environment temperature of said checking matter surrounding environment, and the said environment temperature that will measure obtains as the said temperature of said checking matter.
12., it is characterized in that according to each described emissivity determinator in the claim 9～11:
At said first radiant is Q1, and the temperature of said checking matter is Ta [K], and Si Difen-Boltzmann constant is under the situation of σ, the condition of (formula 2) below satisfying:
σ (Ta+500)
4≤Q1≤σ (Ta+5000)
4(formula 2).
13., it is characterized in that according to each described emissivity determinator in the claim 9～11:
The irradiation area of said first infrared light of said light source equates with the mensuration zone of said second radiant of said determination part.
14., it is characterized in that according to each described emissivity determinator in the claim 9～11:
The mensuration zone of the irradiation area of said first infrared light of said light source and said second radiant of said determination part equates,
At said first radiant is Q1, and the temperature of said checking matter is Ta [K], and Si Difen-Boltzmann constant is under the situation of σ, the condition of (formula 2) below satisfying:
σ (Ta+500)
4≤Q1≤σ (Ta+5000)
4(formula 2).
15. a testing fixture is characterized in that comprising:
The described emissivity determinator of claim 14; And
Whether inspection portion is non-defective unit based on the emissivity inspection checking matter that is calculated by said emissivity determinator.
16. testing fixture according to claim 15 is characterized in that:
Said inspection portion is judged to be said checking matter bad under the situation of the said emissivity less than 0.5 that calculates.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011096798A JP5500120B2 (en) | 2011-04-25 | 2011-04-25 | Inspection method for electronic devices |
| JP2011-096798 | 2011-04-25 |
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| CN102759507A true CN102759507A (en) | 2012-10-31 |
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| CN2012100314902A Pending CN102759507A (en) | 2011-04-25 | 2012-02-13 | Emission rate determination method, emission rate determining apparatus, detecting method and detecting apparatus |
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| CN (1) | CN102759507A (en) |
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|---|---|---|---|---|
| JP6232734B2 (en) * | 2013-04-26 | 2017-11-22 | 株式会社ジェイテクト | Optical nondestructive inspection apparatus and optical nondestructive inspection method |
| JP6479407B2 (en) * | 2014-10-20 | 2019-03-06 | 株式会社ニューフレアテクノロジー | Radiation thermometer and temperature measurement method |
| JP6620827B2 (en) * | 2017-04-14 | 2019-12-18 | Ｊｆｅスチール株式会社 | Radiation temperature measuring device and radiation temperature measuring method |
| JP2022163734A (en) * | 2019-09-13 | 2022-10-27 | 村田機械株式会社 | Temperature monitoring method, temperature monitoring device, and control panel |
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|---|---|---|---|---|
| JPH0351725A (en) * | 1989-07-19 | 1991-03-06 | Chino Corp | Emissivity measuring apparatus |
| DE19739338A1 (en) * | 1997-07-04 | 1999-01-07 | Innovative Glassysteme Gmbh & | System for measuring thermal emissivity |
| JP2002286550A (en) * | 2001-03-23 | 2002-10-03 | Hioki Ee Corp | Radiation thermometer |
| EP1643225A1 (en) * | 2004-09-30 | 2006-04-05 | Ube Industries, Ltd. | Emissivity measuring device |
| US20100292951A1 (en) * | 2009-05-15 | 2010-11-18 | Fluke Corporation | Method and system for measuring thermal radiation to determine temperature and emissivity of an object |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5234230B2 (en) * | 1971-12-27 | 1977-09-02 | ||
| JPH0663848B2 (en) * | 1986-06-27 | 1994-08-22 | 新日本製鐵株式会社 | How to measure the surface temperature of an object |
| JPH0367137A (en) * | 1989-08-04 | 1991-03-22 | Chino Corp | Surface temperatude controller |
| JP4674202B2 (en) * | 2006-12-12 | 2011-04-20 | 有限会社新工 | Method for evaluating minute metal joints |
| JP4648373B2 (en) * | 2007-09-13 | 2011-03-09 | 有限会社新工 | Inspection method for small metal joints |
-
2011
- 2011-04-25 JP JP2011096798A patent/JP5500120B2/en not_active Expired - Fee Related
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2012
- 2012-02-13 CN CN2012100314902A patent/CN102759507A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0351725A (en) * | 1989-07-19 | 1991-03-06 | Chino Corp | Emissivity measuring apparatus |
| DE19739338A1 (en) * | 1997-07-04 | 1999-01-07 | Innovative Glassysteme Gmbh & | System for measuring thermal emissivity |
| JP2002286550A (en) * | 2001-03-23 | 2002-10-03 | Hioki Ee Corp | Radiation thermometer |
| EP1643225A1 (en) * | 2004-09-30 | 2006-04-05 | Ube Industries, Ltd. | Emissivity measuring device |
| US20100292951A1 (en) * | 2009-05-15 | 2010-11-18 | Fluke Corporation | Method and system for measuring thermal radiation to determine temperature and emissivity of an object |
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|---|---|
| JP2012229925A (en) | 2012-11-22 |
| JP5500120B2 (en) | 2014-05-21 |
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Application publication date: 20121031 |