CN102759326A - Micro-electro-mechanical system (MEMS) strain type icing sensor and detection method - Google Patents
Micro-electro-mechanical system (MEMS) strain type icing sensor and detection method Download PDFInfo
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Abstract
The invention discloses a micro-electro-mechanical system (MEMS) strain type icing sensor and a detection method, and relates to icing thickness detection technologies. The MEMS strain type icing sensor comprises a dual-rectangle-shaped frame, a peripherally clamped square flat film, detection resistors, reference resistors, an ice melting resistor and electrode leads. A detection system is formed by the MEMS strain type icing sensor and an interface circuit. When an icing phenomenon is detected, a Wheatstone bridge is formed by the detection resistors and the reference resistors, and the detection resistors are used to sense stress changes of the surface of the flat film, which are caused by the icing, thereby achieving the aim of icing detection. On the one hand, the interface circuit is used for providing constant current drive for the Wheatstone bridge; and on the other hand, the interface circuit is used for amplifying voltage signals output by the bridge and conducting temperature compensation on the voltage signals.
Description
Technical field
The thickness detection technique field that the present invention relates to freeze is a kind of MEMS strain-type freezing sensor and detection method, can be to the on-line continuous monitoring of fixing a point of the icing thickness of body surface submillimeter magnitudes such as aircraft, power transmission line.
Background technology
The sensor and the detection method thereof of the detection by quantitative aircraft that has proposed at present, power transmission line, shaft tower, insulator and other icing thickness in relative stationary object surface can be divided into following two types.
The first kind is a direct measuring method, and this method is through icing thickness artificial or the direct Measuring Object of other equipment surface.Several kinds of typical direct measuring method have: (1) manual measurement relies on manual work directly to arrive the icing thickness of in-site measurement with chi; (2) ocular estimate relies on the icing thickness in eye-observation probe or miscellaneous part surface; (3) infrared blocked method to the ultrared degree that stops, is come the icing thickness in detector probe surface through the probe on the measurement infrared ray light path; (4) camera method is taken ice sheet plane of structure photo with camera, and with the upper and lower interface of ice sheet in the digital image processing techniques identification photo, to confirm ice layer thickness.
Second type is indirect measurement method, and this method is different based on characteristics such as the optics of ice and air and water, electricity, machinery, detects icing thickness through detecting these characterisitic parameters.Several kinds of typical indirect measurement methods have: (1) optical fiber type, according to reflection, refraction and the scattering properties of ice to light, through detecting reflection, refraction and the scattering degree of ice sheet to incident ray, detect the thickness of ice sheet.(2) condenser type and resistance-type, capacitance method are according to the difference of the specific inductive capacity of ice, air and water, and the resistance rule through detecting capacitance or the resistance value between two electrodes, judges whether the material between the electrode is ice according to the difference of resistivity.Again with many to the equidistant arrangement of electrode, each electrode is as an icing thickness scale, total icing thickness equals that material is the product of the number of the electrode pair of ice between right distance of adjacent electrode and electrode.(3) resonant mode comprises magnetostriction vibration cylinder type and voltage level membrane type, and the principle of magnetostriction vibration cylinder type is the icing quality that increases vibration cylinder on the vibration cylinder, and the vibration cylinder resonance frequency is reduced; The voltage level membrane type has then increased the rigidity of flat film based on freezing on the flat film, and flat film resonance frequency is increased.(4) U.S. NASA proposed the condenser type freezing sensor that a kind of micro fabrication is made in 1997, and the making of sensor detects principle and changes the principle of flat film rigidity based on freezing on the flat film based on silicon-glass anode linkage technology.Different with the voltage level membrane type, the flat film of this condenser type freezing sensor is a static deformation, the variation of freezing and making form flat film rigidity and deflection on the flat film, and the clearance distance between flat simultaneously film and the glass substrate changes.Variation through the detector gap distance just can be known icing thickness.
In the above-mentioned several kinds of method for measuring thickness that typically freeze, manual measurement and ocular estimate can not be carried out real-time online to freezing and detected; Measuring accuracy reduced when infrared blocked method and camera method had vibration on the measured object surface, and pick-up lens freezes also can cause the inefficacy of camera method; Optical fiber type, condenser type and resistance-type are very responsive to the state (transparency ice or rime ice) and the composition (impure kind and ratio) of ice, and the uncertainty of ice state and composition can cause the uncertainty of testing result; Magnetostriction vibration cylinder type and voltage level membrane type need the driving source of solenoid and piezoelectric ceramics respectively, are difficult to realize microminiaturized; The condenser type freezing sensor that U.S. NASA proposes has been realized microminiaturization, but its manufacture craft is complicated, and the static bonding process in the manufacturing process is introduced stress easily, and the icing signal of sensor output is very small capacitance variations, detects very difficulty.
Summary of the invention
The purpose of this invention is to provide a kind of MEMS strain-type freezing sensor and detection method, is that the thickness that freezes is carried out high resolving power, highly sensitive detection, has both realized microminiaturization, reduces technology difficulty, detects easily again, and interface circuit is simple.
For realizing the object of the invention, technical solution of the present invention is:
A kind of MEMS strain-type freezing sensor; It comprises that circular frame is put down film, detected resistance, reference resistance, ice-melt resistance, contact conductor, and wherein, flat film of square and circular frame endoporus are suitable; Be overlying on the circular frame endoporus, bore edges is affixed in the four edges of flat film and the circular frame; Detect the middle part of resistance at flat film four edges edge, reference resistance is positioned at over against the outside of detecting resistance, outer edge on circular frame; Ice-melt resistance is in the central authorities of flat film; Contact conductor lays respectively at the two ends of a diagonal line on the circular frame, with the center symmetry of flat film; Whole sensor is symmetrical with another diagonal line of circular frame;
Detection resistance, reference resistance, ice-melt resistance are paper tinsel formula strain resistor;
Detecting resistance is four paper tinsel formula strain resistors, and per two strain resistors are in series, and two ends are connected to one group with contact conductor or contact conductor respectively, totally two groups: detect resistance and detect resistance; Reference resistance is four paper tinsel formula strain resistors, and per two strain resistors are in series, and two ends are connected to one group with contact conductor or contact conductor respectively, totally two groups: reference resistance and reference resistance;
Detect resistance, reference resistance as an arm of electric bridge, is formed the both arms Wheatstone bridge respectively.
Described MEMS strain-type freezing sensor; Its said circular frame, flat film, detection resistance, reference resistance, ice-melt resistance, contact conductor adopt the body micro fabrication to make; Material is a monocrystalline silicon; Technological process is: (a) with thermal oxide and LPCVD method at monocrystalline silicon surface growing silicon oxide/silicon nitride double-layer film structure; (b) delamination (lift-off) technology is made and is detected resistance, reference resistance, ice-melt resistance and contact conductor, and (c) reactive ion etching (RIE) is opened the window of wet etching at the silicon chip back side, and (d) the wet method anisotropic etch is made circular frame peace film.
Described MEMS strain-type freezing sensor; Its said detection resistance is identical with the reference resistance shape and size, adopts same step lift-off technology to make, and material is identical with thickness; Resistance value equates; During temperature variation, the resistance value that detects resistance, reference resistance is identical with temperature changing trend, forms Wheatstone bridge and has offset most of temperature effect.
A kind of detection method of described MEMS strain-type freezing sensor, its workflow is: the even distributed force that the flat film of square receives normal direction is done the time spent, and stress distribution appears in the surface; The point midway that the maximum stress SMX of upper surface aids the border areas on flat film admittedly, direction is main along perpendicular near direction of aiding the border areas admittedly, and very little with the components of stress of the parallel direction of aiding the border areas admittedly; Have on the flat film when icing, freezing has increased the rigidity of flat film, makes to put down the film deformation quantity and reduce; Surface stress reduces, and maximum stress SMX reduces, the dull corresponding relation that is reduced to of freeze thickness and maximum stress SMX; With the decrease that detects resistance detection maximum stress SMX, realize detection, after the thickness that freezes surpasses range to the thickness that freezes; Ice-melt resistance galvanization produces Joule heat will put down the ice-out removal on the film, guarantee that sensor can recycle repeatedly.
Described detection method; It also has interface circuit when using; Sensor and interface circuit are formed detection system, and the detection resistance of sensor and reference resistance are connected with interface circuit through go between w1, w2, w3, w4 of pad, and potentiometer RP1 is used for regulating the bridge zero balance;
Interface circuit comprises constant-current source circuit, instrument amplifying circuit and temperature-compensation circuit; Constant-current source circuit A1 provides constant-current driving for the Wheatstone bridge of forming on the one hand; Export temperature variant voltage signal on the other hand; As temperature compensation signal, the instrument amplifying circuit amplifies the voltage signal of the Wheatstone bridge output of forming, and the output signal is not for passing through the icing signal of temperature compensation; Temperature-compensation circuit carries out the anti-phase summation to the icing signal of the not process temperature compensation that the temperature compensation signal and the instrument amplifying circuit of constant-current source circuit output are exported, and output voltage signal is the icing signal after the temperature compensation.
Described detection method; Its said interface circuit is provided with a plurality of potentiometers; Wherein, Potentiometer RP1 is used for regulating the bridge zero balance, and potentiometer RP2 is used for regulating the enlargement factor of temperature-compensation circuit A3 to the temperature compensation signal of constant-current source circuit A1 output, and potentiometer RP3 is used for regulating the sensitivity that detection is frozen.
MEMS strain-type freezing sensor among the present invention adopts the body micro fabrication to make, and realized microminiaturization, and manufacture craft is simple, is convenient to reduce cost and mass production.Detect flat film surface stress with wheatstone bridge configuration and change and detect icing thickness, the output signal that freezes is a voltage signal, detects easily.The resolution of the icing thickness of MEMS strain-type freezing sensor detection and highly sensitive; Can accurately detect freezing of submillimeter thickness; But range is less, is applicable to that aircraft freezes detection and the daily icing data accumulation of transmission line of electricity etc. to higher but not too high to the range requirement field of detection resolution that freezes.
Description of drawings
Fig. 1 is the structural representation of MEMS strain-type freezing sensor of the present invention;
Among the figure: the square of 1-circular frame 2-periphery fixed is put down film 3,3a-detects resistance 4,4a-reference resistance 5-ice-melt resistance 6,6a-contact conductor RP1-bridge zero regulator potentiometer w1, w2, w3, w4-pad lead-in wire;
Fig. 2 is the manufacture craft process flow diagram of MEMS strain-type freezing sensor of the present invention;
Among the figure: the flat film 3-of the square of 1-circular frame 2-periphery fixed detects resistance 4-reference resistance 5-ice-melt resistance 7-monocrystalline substrate 8-monox/silicon nitride duplicature (a)-thermal oxide and LPCVD nitrogenize (b)-lift-off technology is made anisotropic wet corrosion under strain resistor and contact conductor (c)-RIE back side windowing (the d)-water bath with thermostatic control environment
Fig. 3 is the interface circuit figure of MEMS strain-type freezing sensor of the present invention.
Among the figure: 3,3a-detects resistance 4,4a-reference resistance A1, A3-operational amplifier A 2-instrument amplifier RP1, RP2, RP3-potentiometer.
Embodiment
A kind of MEMS strain-type freezing sensor of the present invention is to make with the body micro fabrication, to the detection of the thickness that the freezes principle based on flat film 2 rigidity of icing change on the flat film 2, adopts strain resistor 3 and 3a to detect flat film upper stress and changes and come the perception signal that freezes.Because transducer range is less, be applicable to that icing thickness that aircraft wing etc. is located detects and the monitoring accumulation of the daily icing level data of power transmission line.
The sensitive structure of MEMS strain-type freezing sensor is the flat film 2 of the square of a periphery fixed; Periphery is supported by circular frame 1; The paper tinsel formula strain resistor that has lift-off technology to make on the circular frame 1 peaceful film 2 is called reference resistance 4 and 4a, detection resistance 3 and 3a, ice-melt resistance 5 respectively.Do the time spent when the even distributed force that flat film 2 receives normal direction, stress distribution appears in flat film 2 surfaces.Have on the flat film 2 when icing, freezing has increased the rigidity of flat film 2, makes to put down film 2 deflections and reduce, and surface stress reduces.Detect flat film surface stress variation with detecting resistance 3 and 3 (a), just can know the icing thickness on flat film surface.The flat film 2 that under the even distributed force effect of normal direction, deforms, the maximal value SMX of surface stress are positioned at the point midway of flat film 2 solid Zhi Bianyuan, and direction is aided the border areas perpendicular near consolidating.Detect resistance 3 and 3 (a) and be positioned at the point midway of aiding the border areas admittedly on the flat film 2, be paper tinsel formula strain resistor, paper tinsel gate length direction is aided the border areas perpendicular to contiguous consolidating, and is used for detecting the variation of maximum stress SMX in the freezing process.Reference resistance 4 is positioned on the circular frame with 4a, and flat film does not receive stress when being out of shape, and is used for and detects resistance 3 constituting Wheatstone bridge with 3a.5 energisings of ice-melt resistance can produce Joule heat, the ice sheet on the flat film is melted remove, and guarantee that sensor can recycle repeatedly.
MEMS strain-type freezing sensor adopts the body micro fabrication to make, and the technological process of making is: (a) grow one deck silicon nitride film as detecting resistance 3 and 3a, reference resistance 4 and the dielectric substrate of 4a and ice-melt resistance 5 and the mask of follow-up wet corrosion technique on N type (100) silicon chip that cleans up 7 surfaces with LPCVD technology.For the internal stress between the lattice that reduces to produce in the silicon nitride growth course, one deck silicon oxide film of on silicon chip 7, growing earlier before the grown silicon nitride forms monox/silicon nitride bilayer film 8 and 8a as stress-buffer layer.(b) make detection resistance 3 and 3a, reference resistance 4 and 4a and ice-melt resistance 5 with delamination technology (lift-off).Concrete steps do; Do sacrifice layer at the positive spin coating one deck of silicon chip positive photoresist earlier; Photoetching making strain resistor figure; Deposit the layer of metal film with sputter or evaporation process in the silicon chip front again, remove the residue photoresist together with top metal with acetone at last, stay patterned film metal strain resistor.(c) do mask with thick glue; With the square etching window at the back side alignment process making silicon chip back side, with reactive ion etching (Reactive IonEtching is called for short RIE) technology; Etch away not by the silicon nitride and the monox of thickening bondline protection, form the window of follow-up wet corrosion technique.(d) corrosion of the anisotropic wet under the water bath with thermostatic control environment.Use the anisotropic wet etching process, erode the silicon chip back side, form the flat film 2 of 1 solid of circular frame not by the monocrystalline silicon of silicon nitride protection.In order to make the corrosion rate homogeneous and controllable, corrosion need be carried out in the water-bath environment of temperature constant.
The detection resistance 3 of MEMS strain-type freezing sensor is formed the Hui Sitong double bridge with 3a, reference resistance 4 and 4a, and the icing signal of output is a voltage signal.Because manufacture craft is symmetry fully, the resistance that detects resistance 3 and 3a and reference resistance 4 and 4a has small difference, therefore regulates the bridge zero balance with the potentiometer RP1 that adds.The effect of amplifying circuit A1 has two: the one, and for electric bridge provides constant-current driving, the 2nd, the output temperature compensating signal.The drive current of electric bridge does
Resistance R
2Resistance approximate the resistance that detects resistance or reference resistance, establishing the resistance that detects resistance 3 and 3a is R
D, the resistance of reference resistance 4 and 4a is R
FTemperature can be divided into two parts to the influence of electric bridge output, and a part is that the change in resistance that causes is directly proportional with temperature variation owing to detect the temperature-coefficient of electrical resistance of resistance 3 and 3a, reference resistance 4 and 4a itself.Another part is the thermal stress effect of substrate to detection resistance 3 and 3a, reference resistance 4 and 4a, and the possible cause that causes has: strain resistor and substrate thermal expansivity do not match, and temperature variation causes the thermal stress of substrate to strain resistor; The solid Zhi Zuoyong of 1 pair of flat film 2 of circular frame, and stress on the form flat film made along with variation of temperature variation etc.The change in resistance that this part influence causes is directly proportional with thermal stress.Therefore the resistance R of the detection resistance that causes of temperature variation
DResistance R with reference resistance
FVariation can be expressed as
ΔR
DT＝R
D(αΔT+KΔσ)
ΔR
FT＝R
F(σΔT+KΔσ)
The temperature compensation signal of amplifier A1 output does
V
CT≈-I(ΔR
DT+ΔR
FT)＝-Iα(R
D+R
F)ΔT-IK(R
D+R
F)Δσ
Amplify the icing signal of electric bridge output with instrument amplifier A2, the linearity is good, and enlargement factor can be regulated through external resistor RA, and input current is little, and is therefore little to the shunting action of electric bridge, guarantees the constant-current driving of electric bridge.The temperature drift of the icing signal of A2 output can be expressed as
V
DT≈I(ΔR
DT-ΔR
FT)＝Iα(R
D-R
F)ΔT-IK(R
D-R
F)Δσ
The temperature drift of the icing signal of A2 output signal and the temperature compensation signal of A1 output are through after the anti-phase summation operation of A3, and the temperature drift of A3 output signal does
V
OT＝K
1V
DT+K
2V
CT
≈[K
2(R
D+R
F)-K
1(R
D-R
F)](IαΔT+IKΔσ)
K in the formula
1And K
2The enlargement factor of the temperature compensation signal that to be respectively A3 export the icing signal of A2 output and A1.Can regulator potentiometer RP2, enlargement factor is satisfied
K
1/K
2＝(R
D+R
F)/(R
D-R
F)
Then A3 exports the temperature drift VOT ≈ 0 of signal.Therefore can be with the output signal of A3 as the final signal that freezes, potentiometer RP3 is used for regulating and detects icing sensitivity.
Embodiment one: the aircraft wing on-line monitoring that freezes
The flat film 2 of the MEMS strain-type freezing sensor among the present invention does not receive even distributed force to do the time spent, regulates the bridge zero balance through potentiometer RP1.Flat film 2 receives and is directed downwards the well-distributed pressure effect and when deforming, stress distribution appears in flat film 2 surfaces.Wherein the maximum stress SMX of upper surface is positioned at the position of detecting resistance 3 and 3a, is tension, and detection resistance 3 is stretched along paper tinsel gate length direction with 3a, and resistance increases.The resistance of reference resistance 4 and 4a is constant when temperature-resistant, so positive magnitude of voltage of electric bridge output.When temperature variation, it is basic identical with 3a, reference resistance 4 and 4a variation tendency to detect resistance 3, and through after the equilibrium activity of electric bridge, most of temperature effect is eliminated.As a resistance, the temperature variant trend of its resistance is identical with 4a with 3a and reference resistance 4 with detection resistance 3 basically with whole electric bridge.Because the type of drive of electric bridge is a constant-current driving; The total current that flows through whole electric bridge is invariable; The current potential of the negative input end of operational amplifier A 1 is constant basically, thus the temperature variant trend of A1 output voltage with detect resistance 3 and 3a, reference resistance 4 is identical with 4a, and is but in the opposite direction; When the resistance that promptly detects resistance 3 and 3a, reference resistance 4 and 4a increased with temperature, the output voltage of operational amplifier A 1 reduced thereupon.With the output voltage of operational amplifier A 1 as temperature compensation signal, with the anti-phase summation of the not temperature compensated icing signal of instrument amplifier A2 output, as long as regulator potentiometer RP2 makes the enlargement factor K of A3 to temperature compensation signal through operational amplifier A 3
1With the enlargement factor K of A3 to the signal that freezes
2Satisfy K
1/ K
2=(R
D+ R
F)/(R
D-R
F), just can temperature effect be eliminated.The leading edge that MEMS strain-type freezing sensor among the present invention is installed in aircraft wing is located and trailing edge lee side down with the wind.When aircraft met the cloud layer that contains super-cooling waterdrop or mixture of ice and water, super-cooling waterdrop or mixture of ice and water can be located to adhere to icing at the wing of aircraft etc., also can on the flat film 2 of the MEMS strain-type freezing sensor of installing on the wing, adhere to icing simultaneously.Freezing has increased the rigidity of flat film 2, has reduced the deflection of flat film 2, and the maximum stress SMX of flat film 2 upper surfaces is reduced, and detects resistance 3 and reduces with 3a length, and resistance is corresponding to be reduced, so the output voltage of Wheatstone bridge reduces.Through detecting the value that reduces of voltage, just can know icing thickness.Draw the time dependent curve of voltage, the average gradient of curve is exactly an icing rate.Because the icing rate of aircraft wing is not only relevant with environment temperature and humidity; Also relevant with the wind speed and direction of environment; Therefore when MEMS strain-type freezing sensor of the present invention is installed on aircraft wing, the difference of wing different parts wind speed and direction in the time of need considering aircraft flight.When the icing thickness on the flat film 2 surpasses range; Sensor output is saturated, and output voltage no longer changes with the variation of the thickness that freezes, and gives ice-melt resistance 5 galvanizations this moment; The ice sheet that the Joule heat that utilizes ice-melt resistance 5 to produce will be put down on the film 2 melts removal, can cycle repeats use to guarantee sensor.
Embodiment two: the daily icing data accumulation of power transmission line
Icing situation detections that detects power transmission line needs two types of freezing sensors: one type of resolution and the necessary height of sensitivity that detects ice covering thickness, and range does not then need too big, is used for the Monitoring Line icing when not serious, the variation that disappears of the length of ice covering thickness; The range of another kind of detection ice covering thickness must be enough big; Resolution and sensitivity then do not need too high; Effect is at transmission line of electricity serious icing disaster to take place, and when ice covering thickness surpasses the range of last type of sensor, is used for judging the order of severity whether serious icing disaster takes place and take place.Two types of freezing sensors are used the length of promptly knowing the thickness that freezes before serious icing disaster the takes place situation that disappears.Two types of freezing sensors and environment temperature and humidity, wind speed and direction and other environmental parameter monitoring devices are used; Just can know that when powerline ice-covering was not serious, ice covering thickness was with the situation of change of environment temperature and humidity, wind speed and direction and other environmental factors.Can also know simultaneously serious icing disaster take place before the situation of change of environmental factor, and the relation of the order of severity of icing disaster and environmental factor is for the icing hazard prediction of transmission line of electricity provides theoretical support.MEMS strain-type freezing sensor of the present invention detects icing resolution and highly sensitive, can detect freezing of submillimeter thickness, but range is little, can be used for the accumulation of the daily icing data of transmission line of electricity.When MEMS strain-type freezing sensor of the present invention being installed on the shaft tower of power transmission line, also need consider the variation of wind speed and direction, make flat film 2, the icing length that is used for the detecting all directions situation that disappears towards different directions.
Claims (6)
1. MEMS strain-type freezing sensor; It is characterized in that; Comprise circular frame 1, flat film (2), detect resistance (3,3a), reference resistance (4,4a), ice-melt resistance (5), contact conductor (6,6a), wherein, the flat film (2) of square is suitable with circular frame (1) endoporus; Be overlying on circular frame (1) endoporus, the four edges and the interior bore edges of circular frame (1) of flat film (2) are affixed; Detect resistance (3,3a) at the middle part of flat film (2) four edges edge, reference resistance (4,4a) is positioned at over against the outside of detecting resistance (3,3a), goes up outer edge at circular frame (1); Ice-melt resistance (5) is in the central authorities of flat film (2); Contact conductor (6,6a) lays respectively at the two ends of the last diagonal line of circular frame (1), with the center symmetry of flat film (2); Whole sensor is symmetrical with another diagonal line of circular frame (1);
Detect resistance (3,3a), reference resistance (4,4a), ice-melt resistance (5) is paper tinsel formula strain resistor;
Detecting resistance (3,3a) is four paper tinsel formula strain resistors, and per two strain resistors are in series, and two ends are connected to one group with contact conductor (6) or contact conductor (6a) respectively, totally two groups: detect resistance (3) and detection resistance (3a); Reference resistance (4,4a) is four paper tinsel formula strain resistors, and per two strain resistors are in series, and two ends are connected to one group with contact conductor (6) or contact conductor (6a) respectively, totally two groups: reference resistance (4) and reference resistance (4a);
Detect resistance (3,3a), reference resistance (4,4a) respectively as an arm of electric bridge, is formed the both arms Wheatstone bridge.
2. MEMS strain-type freezing sensor as claimed in claim 1; It is characterized in that; Said circular frame (1), flat film (2), detect resistance (3,3a), reference resistance (4,4a), ice-melt resistance (5), contact conductor (6,6a) and adopt the body micro fabrication to make; Material is monocrystalline silicon (7); Technological process is: (a) with thermal oxide and LPCVD method in monocrystalline silicon surface growing silicon oxide/silicon nitride double-layer film structure (8,8a); (b) delamination (lift-off) technology make to detect resistance (3,3a), reference resistance (4,4a), ice-melt resistance (5) and contact conductor (6,6a), and (c) reactive ion etching (RIE) is opened the window of wet etching at the silicon chip back side, (d) the wet method anisotropic etch making peaceful film of circular frame (1) (2).
3. MEMS strain-type freezing sensor as claimed in claim 1 is characterized in that, said detection resistance (3,3a) and reference resistance (4,4a) shape and size are identical; Adopt same step lift-off technology to make; Material is identical with thickness, and resistance value equates, during temperature variation; The resistance value that detects resistance (3,3a), reference resistance (4,4a) is identical with temperature changing trend, forms Wheatstone bridge and has offset most of temperature effect.
4. the detection method of a MEMS strain-type freezing sensor as claimed in claim 1 is characterized in that, its workflow is: the even distributed force that the flat film (2) of square receives normal direction is done the time spent; Stress distribution appears in the surface, the point midway that the maximum stress SMX of upper surface aids the border areas on flat film (2) admittedly, and the main edge of direction is perpendicular near direction of aiding the border areas admittedly; And very little with the components of stress of the parallel direction of aiding the border areas admittedly, the icing rigidity of flat film (2) that increased is arranged on the flat film (2) when icing; Flat film (2) deformation quantity is reduced, and surface stress reduces, and maximum stress SMX reduces; The dull corresponding relation that is reduced to of thickness and maximum stress SMX freezes; With detecting the decrease that resistance (3,3a) detects maximum stress SMX, realize detection, after the thickness that freezes surpasses range to the thickness that freezes; Ice-melt resistance (5) galvanization produces Joule heat will put down the ice-out removal on the film (2), guarantee that sensor can recycle repeatedly.
5. detection method as claimed in claim 4; It is characterized in that; Also has interface circuit during use; Sensor and interface circuit are formed detection system, and the detection resistance of sensor and reference resistance are connected with interface circuit through go between w1, w2, w3, w4 of pad, and potentiometer RP1 is used for regulating the bridge zero balance;
Interface circuit comprises constant-current source circuit A1, instrument amplifying circuit A2 and temperature-compensation circuit A3; Constant-current source circuit A1 provides constant-current driving for the Wheatstone bridge that (3,3a, 4,4a) are formed on the one hand; Export temperature variant voltage signal on the other hand; As temperature compensation signal; Instrument amplifying circuit A2 amplifies the voltage signal of the Wheatstone bridge output of (3,3a, 4,4a) forming; The output signal is not for passing through the icing signal of temperature compensation, and temperature-compensation circuit A3 does not carry out anti-phase through the icing signal of temperature compensation and sues for peace the temperature compensation signal of constant-current source circuit A1 output and instrument amplifying circuit A2 output, and output voltage signal is the icing signal after the temperature compensation.
6. detection method as claimed in claim 5; It is characterized in that; Said interface circuit is provided with a plurality of potentiometers, and wherein, potentiometer RP1 is used for regulating the bridge zero balance; Potentiometer RP2 is used for regulating the enlargement factor of temperature-compensation circuit A3 to the temperature compensation signal of constant-current source circuit A1 output, and potentiometer RP3 is used for regulating the sensitivity that detection is frozen.
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| CN108204870A (en) * | 2016-12-19 | 2018-06-26 | 深圳纽迪瑞科技开发有限公司 | Pressure sensitive component and the electronic equipment with the pressure sensitive component |
| CN109211980A (en) * | 2018-10-29 | 2019-01-15 | 哈尔滨工业大学 | Device for monitoring icing and method based on Piezoelectric Impedance principle |
| CN111114792A (en) * | 2019-12-19 | 2020-05-08 | 武汉航空仪表有限责任公司 | Icing sensor and method capable of calculating icing rate |
| CN111307364A (en) * | 2020-03-18 | 2020-06-19 | 厦门易感智能测控技术有限公司 | Anti-icing jam pressure transmitter |
| CN111780661A (en) * | 2020-07-22 | 2020-10-16 | 华中科技大学 | Method and system for accurately measuring bending strain of flexible electronic device |
| CN111780900A (en) * | 2020-06-11 | 2020-10-16 | 宁波柯力传感科技股份有限公司 | Strain force transducer |
| CN112498699A (en) * | 2020-12-11 | 2021-03-16 | 武汉航空仪表有限责任公司 | Icing detector based on electric heating principle |
| CN110608842B (en) * | 2018-06-15 | 2021-07-02 | 苹果公司 | Water detection pressure sensor |
| CN113624397A (en) * | 2021-08-16 | 2021-11-09 | 苏州司南传感科技有限公司 | Silicon piezoresistive pressure sensor calibration compensation method |
| CN114313272A (en) * | 2022-02-07 | 2022-04-12 | 中国商用飞机有限责任公司 | Icing detector, electronic device, and icing detection method |
| CN114414123A (en) * | 2022-01-24 | 2022-04-29 | 上海交通大学 | Strain sensor chip on special-shaped metal substrate and in-situ preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85100133A (en) * | 1985-04-01 | 1986-08-06 | 清华大学 | The manufacturing process of micro-foil resistance strain gauge |
| JPH03249530A (en) * | 1990-02-28 | 1991-11-07 | Agency Of Ind Science & Technol | Distribution type tactile sensor |
| CN101034021A (en) * | 2007-03-02 | 2007-09-12 | 清华大学 | Wide stress area silicon pressure sensor |
| US20070277616A1 (en) * | 2006-06-05 | 2007-12-06 | Nikkel Eric L | Micro Electrical Mechanical Systems Pressure Sensor |
-
2011
- 2011-04-27 CN CN2011101063339A patent/CN102759326A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85100133A (en) * | 1985-04-01 | 1986-08-06 | 清华大学 | The manufacturing process of micro-foil resistance strain gauge |
| JPH03249530A (en) * | 1990-02-28 | 1991-11-07 | Agency Of Ind Science & Technol | Distribution type tactile sensor |
| US20070277616A1 (en) * | 2006-06-05 | 2007-12-06 | Nikkel Eric L | Micro Electrical Mechanical Systems Pressure Sensor |
| CN101034021A (en) * | 2007-03-02 | 2007-09-12 | 清华大学 | Wide stress area silicon pressure sensor |
Non-Patent Citations (1)
| Title |
|---|
| 赵晓锋: "纳米硅/单晶硅异质结MOSFETs压/磁多功能传感器研究", 《中国博士学位论文全文数据库》 * |
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| CN106168517A (en) * | 2016-09-21 | 2016-11-30 | 成都创慧科达科技有限公司 | A kind of high sensitivity integrated pressure sensor |
| CN108204870A (en) * | 2016-12-19 | 2018-06-26 | 深圳纽迪瑞科技开发有限公司 | Pressure sensitive component and the electronic equipment with the pressure sensitive component |
| CN106950176A (en) * | 2017-04-27 | 2017-07-14 | 国网山西省电力公司经济技术研究院 | It is a kind of to test coated by ice of overhead power transmission line and the apparatus and method of wire interface normal direction bond strength |
| CN106950176B (en) * | 2017-04-27 | 2023-04-28 | 国网山西省电力公司经济技术研究院 | Device and method for testing normal bonding strength of icing and wire interface of overhead transmission line |
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| US11525752B2 (en) | 2018-06-15 | 2022-12-13 | Apple Inc. | Water detecting pressure sensors |
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| CN109211980A (en) * | 2018-10-29 | 2019-01-15 | 哈尔滨工业大学 | Device for monitoring icing and method based on Piezoelectric Impedance principle |
| CN111114792B (en) * | 2019-12-19 | 2021-04-23 | 武汉航空仪表有限责任公司 | Icing sensor and method capable of calculating icing rate |
| CN111114792A (en) * | 2019-12-19 | 2020-05-08 | 武汉航空仪表有限责任公司 | Icing sensor and method capable of calculating icing rate |
| CN111307364A (en) * | 2020-03-18 | 2020-06-19 | 厦门易感智能测控技术有限公司 | Anti-icing jam pressure transmitter |
| CN111780900A (en) * | 2020-06-11 | 2020-10-16 | 宁波柯力传感科技股份有限公司 | Strain force transducer |
| CN111780900B (en) * | 2020-06-11 | 2022-06-07 | 宁波柯力传感科技股份有限公司 | Strain force transducer |
| CN111780661A (en) * | 2020-07-22 | 2020-10-16 | 华中科技大学 | Method and system for accurately measuring bending strain of flexible electronic device |
| CN111780661B (en) * | 2020-07-22 | 2021-10-08 | 华中科技大学 | Method and system for accurately measuring bending strain of flexible electronic device |
| CN112498699A (en) * | 2020-12-11 | 2021-03-16 | 武汉航空仪表有限责任公司 | Icing detector based on electric heating principle |
| CN113624397A (en) * | 2021-08-16 | 2021-11-09 | 苏州司南传感科技有限公司 | Silicon piezoresistive pressure sensor calibration compensation method |
| CN114414123A (en) * | 2022-01-24 | 2022-04-29 | 上海交通大学 | Strain sensor chip on special-shaped metal substrate and in-situ preparation method thereof |
| CN114414123B (en) * | 2022-01-24 | 2023-08-25 | 上海交通大学 | Strain sensor chip on special-shaped metal substrate and in-situ preparation method thereof |
| CN114313272A (en) * | 2022-02-07 | 2022-04-12 | 中国商用飞机有限责任公司 | Icing detector, electronic device, and icing detection method |
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