CN102755969B - Method for improving surface cleaning ability of reaction unit - Google Patents
Method for improving surface cleaning ability of reaction unit Download PDFInfo
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- CN102755969B CN102755969B CN201110108361.4A CN201110108361A CN102755969B CN 102755969 B CN102755969 B CN 102755969B CN 201110108361 A CN201110108361 A CN 201110108361A CN 102755969 B CN102755969 B CN 102755969B
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- reaction unit
- unit surface
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- surface cleaning
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Abstract
The invention relates to a method for improving surface cleaning ability of a reaction unit. The method sequentially includes following steps: oxygen-containing gas enters the surface of the reaction unit; and fluorine-containing gas enters the surface of the reaction unit, and the reaction unit is washed. All above, the novel cleaning method for the surface of the reaction unit is capable of continuously and effectively eliminating residual impurity on the surface of the reaction unit, and uniformity and flatness of wafer surface during process manufacturing procedure in the reaction unit are further improved.
Description
Technical field
The present invention relates to a kind of integrated circuit fabrication process technology, relate in particular to a kind of method that improves reaction unit surface cleaning ability.
Background technology
In integrated circuit fabrication process process, reaction chamber (Chamber) has multiple kinds and multiple use, such as plasma etching reaction chamber, chemical vapour deposition reaction chamber etc., wafer is placed in reaction chamber and completes each manufacturing process, for example, in plasma etching reaction chamber, when crystal column surface is carried out to plasma etching, can in reaction chamber inwall and internal unit thereof, form film accumulation, this film accumulation can drop in reaction environment gradually, affects normally carrying out of etching technics; Equally, in chemical vapour deposition reaction chamber, along with the deposition gases passing into is attached to the surface of equipment in reactor wall, surface reaction platform and other reaction chambers, uniformity and the flatness of the sedimentary deposit that impact forms on subsequent wafer surface.
In the prior art, conventionally in described reaction chamber, carry out after a period of time manufacturing process, utilize cleaning to clean reaction chamber and internal unit thereof, the patent No. is the method that 10/430955 United States Patent (USP) discloses the inner impurity of a kind of removing semiconductor technology reaction chamber (Semiconductor Process Chamber), particularly, pass into fluorine-containing gas (Molecular Fluorin Gas) to reaction chamber, utilize fluorine reaction to dissolve the deposited material that is deposited on reaction chamber inwall and reaction chamber internal unit surface.
In actual production process, for chemical vapour deposition reaction chamber, wafer fixed placement is in reaction chamber, deposition gases (for example nitrogenous gas) flow to the surface of wafer equably by the through hole that is positioned at the gas mixed transport platform (Face Plate) directly over wafer, and forms sedimentary deposit (for example nitration case).Through after a period of time, in about 900 wafer of deposition, utilize the clean rate of above-mentioned fluoro-gas method obviously to decline, cause a large amount of deposits residual, and then impact is at uniformity and the flatness of the sedimentary deposit of subsequent wafer surface formation, causes the grain defect of crystal column surface simultaneously.Its reason is, wafer enters before reaction chamber, can be to the logical ammonia (NH of crystal column surface
3) process, to protect wafer, improving uniformity and flatness, reaction chamber inwall and surface reaction platform adopt metallic aluminium material conventionally, and there are the thin aluminium oxide protection of one deck, NH in surface
3enter reaction chamber and react with the aluminium oxide of reaction chamber inwall and gas mixed transport platform surface, exposing metallic aluminium; Fluorine ion very easily with reactive aluminum, therefore reduce in a large number in order to the fluorine ion of removing reaction residue, greatly shortened the efficiency of fluoride ion removing sedimentary deposit, thus prior art the cleaning efficiency of reaction chamber is limited to some extent, along with the increase cleaning efficiency of wafer throughput significantly reduces.
In addition, other utilize the reaction unit of fluoro-gas clean surface all to have the problems referred to above, along with the increase of output and access times, utilize the cleaning efficiency of fluoro-gas significantly to reduce.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of reaction unit effective, long clean method.
For addressing the above problem, the invention provides a kind of method that improves reaction unit surface cleaning ability, comprise the following steps successively:
To the logical oxygen-containing gas in described reaction unit surface, described reaction unit surface is oxidized;
To the logical fluoro-gas in described reaction unit surface, described reaction unit is cleaned.
Further, described oxygen-containing gas comprises a kind of or its combination in oxygen, ozone, nitrous oxide, chlorine monoxid.
Further, described fluoro-gas comprises a kind of or its combination in fluorine gas, Nitrogen trifluoride, hydrogen fluoride.
Further, described oxygen-containing gas using plasma form is sputtered onto the surface of described reaction unit.
Further, the radio-frequency power of the plasma apparatus of the described plasma of described transmitting is 500W～2000W.
Further, to pass into the time be 20s～10min to described oxygen-containing gas.
Further, in the logical oxygen-containing gas process in described reaction unit surface, environment temperature is 20 DEG C～600 DEG C.
Further, in described reaction unit, lead in the process of oxygen-containing gas, described gas flow is 1000sccm～3000sccm.
Further, described reaction unit is ion etching reaction chamber, chemical vapour deposition reaction chamber, is arranged on the equipment of plasma etching reaction chamber or chemical vapour deposition reaction chamber inside or pump is taken over road.
In sum, the invention provides a kind of new reaction unit clean method, first oxygen-containing gas is passed into reaction unit surface, there is oxidation reaction with reaction unit surface and form oxide membranous layer, described oxide membranous layer can intercept follow-up fluoro-gas and metal reaction, prevent that this metal consumption from falling fluoro-gas, increase the quantity of the fluorine reacting with impurity and residue, improve fluoro-gas and remove sedimental efficiency, improve cleansing power, thereby the residual impurity of the cleaning reaction apparatus surface of continuous and effective, and then uniformity and the flatness of the crystal column surface of manufacturing process are carried out in raising in reaction unit.
Brief description of the drawings
Fig. 1 is the outline flowchart of the method for raising reaction unit surface cleaning ability of the present invention.
Fig. 2 is the method for raising reaction unit surface cleaning ability of the present invention and the cleaning efficiency comparison diagram of prior art.
Detailed description of the invention
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art is also encompassed in protection scope of the present invention.
Secondly, the present invention utilizes schematic diagram to carry out detailed statement, and in the time that example of the present invention is described in detail in detail, for convenience of explanation, schematic diagram does not amplify according to general ratio is local, should be using this as limitation of the invention.
Fig. 1 is the outline flowchart of the method for raising reaction unit surface cleaning ability of the present invention.Incorporated by reference to Fig. 1, the method for raising reaction unit surface cleaning ability of the present invention, comprises the following steps successively:
S01: to the logical oxygen-containing gas in described reaction unit surface, described reaction unit surface is oxidized;
S02: to the logical fluoro-gas in described reaction unit surface, described reaction unit is cleaned.
The present invention is applicable to use fluoro-gas to remove its surperficial impurity such as Si oxide, nitrogen oxide, the device of residue, for example, be the reaction unit of for example, being made up of metal material (being aluminium material).In the present embodiment, described reaction unit can refer to plasma etching reaction chamber, chemical vapour deposition reaction chamber, the miscellaneous equipment, pump that are arranged on plasma etching reaction chamber or chemical vapour deposition reaction chamber inside take over road etc.First oxygen-containing gas is passed into reaction unit surface, there is oxidation reaction with reaction unit surface and form oxide membranous layer, described oxide membranous layer can intercept follow-up fluoro-gas and metal reaction, prevent that this metal consumption from falling fluoro-gas, increase the quantity of the fluorine reacting with impurity and residue, remove sedimental efficiency thereby improve fluoro-gas, improve cleansing power.
Described oxygen-containing gas is a kind of or its combination in oxygen, ozone, nitrous oxide, chlorine monoxid, in the present embodiment, using plasma (Plasma) forms the surface of sputter nitrous oxide to described reaction unit, wherein preferably utilize the Plasma N2O Plasma that dissociates, N2O bond energy is lower, be easy to be formed a large amount of oxonium ions by plasma, oxonium ion reacts with the metal material on reaction chamber surface and generates metal oxide film.The radio-frequency power of launching the plasma apparatus of described plasma is 500W～2000W, environment temperature is 20 DEG C～600 DEG C, described gas flow is 1000sccm～3000sccm (volume flow unit, standard-statecubic centimeter per minute), the reaction time is 20s～10min.Can adjust reaction condition according to technique needs and process conditions.Oxonium ion forms oxide membranous layer on reaction unit surface with its aluminum material or other metal reactions, intercepts follow-up fluorine ion and metal reaction, thereby improves the sedimental efficiency of fluoride ion removing, improves cleansing power.In this external step that passes into oxygen-containing gas, its reaction condition can require to adjust according to actual process requirement and efficiency.
Fig. 2 is the method for raising reaction unit surface cleaning ability of the present invention and the cleaning efficiency comparison diagram of prior art.C1, C2 are cleaning efficiency schematic diagram after adopting the method for the invention respectively two reaction units to be cleaned, C3, C4 are cleaning efficiency schematic diagram after prior art cleans two reaction units respectively, and wherein cleaning efficiency unit is (nm/min).In figure, the present invention is to adopt N2O plasma to be sputtered onto reaction unit surface as example, on reaction unit surface, mineralization pressure environment is 4.8Torr, radio-frequency power is 200W, flow is 2800sccm, under the environment temperature of 400 DEG C, continue after 20 seconds of sputter, recycling fluoro-gas carries out follow-up clean, and prior art is only utilized and passed into fluoro-gas and clean.Can see, corresponding C3, the C4 of prior art is along with the number of times that reaction unit carries out manufacturing process to wafer increases, and cleaning efficiency constantly declines, and C1, C2 are along with utilizing reaction unit wafer to be carried out to the increase of the number of times of manufacturing process, cleaning efficiency is almost constant, and cleaning capacity obviously improves.
In sum, the invention provides a kind of new reaction unit clean method, the method is in order to improve the residual impurity of cleaning reaction apparatus surface that can continuous and effective, and then improves uniformity and the flatness of the crystal column surface that carries out manufacturing process in reaction unit.
Although the present invention discloses as above with preferred embodiment; so it is not in order to limit the present invention; under any, in technical field, have and conventionally know the knowledgeable; without departing from the spirit and scope of the present invention; when doing a little change and retouching, therefore protection scope of the present invention is when being as the criterion depending on claims person of defining.
Claims (9)
1. a method that improves reaction unit surface cleaning ability, is characterized in that, comprises the following steps successively:
To the logical oxygen-containing gas in described reaction unit surface, described reaction unit surface is oxidized;
To the logical fluoro-gas in described reaction unit surface, described reaction unit is cleaned.
2. the method for raising reaction unit surface cleaning ability as claimed in claim 1, is characterized in that, described oxygen-containing gas comprises a kind of or its combination in oxygen, ozone, nitrous oxide, chlorine monoxid.
3. the method for raising reaction unit surface cleaning ability as claimed in claim 1, described fluoro-gas comprises a kind of or its combination in fluorine gas, Nitrogen trifluoride, hydrogen fluoride.
4. the method for raising reaction unit surface cleaning ability as claimed in claim 1, described oxygen-containing gas using plasma form is sputtered onto the surface of described reaction unit.
5. the method for raising reaction unit surface cleaning ability as claimed in claim 4, the radio-frequency power of launching the plasma apparatus of described plasma is 500W～2000W.
6. the method for raising reaction unit surface cleaning ability as claimed in claim 4, it is 20s～10min that described oxygen-containing gas passes into the time.
7. the method for raising reaction unit surface cleaning ability as claimed in claim 4, is characterized in that, in the logical oxygen-containing gas process in described reaction unit surface, environment temperature is 20 DEG C～600 DEG C.
8. the method for raising reaction unit surface cleaning ability as claimed in claim 4, is characterized in that, in described reaction unit, leads in the process of oxygen-containing gas, and described oxygen-containing gas flow is 1000sccm～3000sccm.
9. the method for raising reaction unit surface cleaning ability as claimed in claim 1, it is characterized in that, equipment or pump that described reaction unit is ion etching reaction chamber, chemical vapour deposition reaction chamber, be arranged on plasma etching reaction chamber or chemical vapour deposition reaction chamber inside are taken over road.
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| CN201110108361.4A CN102755969B (en) | 2011-04-28 | 2011-04-28 | Method for improving surface cleaning ability of reaction unit |
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| CN102755969B true CN102755969B (en) | 2014-12-10 |
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| CN105537207B (en) * | 2015-12-11 | 2018-09-25 | 上海交通大学 | A kind of cleaning method of high temperature quartz ampoule |
| CN111370282B (en) * | 2018-12-26 | 2022-06-24 | 江苏鲁汶仪器有限公司 | Cleaning method of plasma enhanced chemical vapor deposition chamber |
| CN112458435B (en) * | 2020-11-23 | 2022-12-09 | 北京北方华创微电子装备有限公司 | Atomic layer deposition equipment and cleaning method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101204705A (en) * | 2006-12-21 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method of cleaning chamber with silicon chip erosion |
| CN101220461A (en) * | 2007-01-08 | 2008-07-16 | 和舰科技(苏州)有限公司 | Method for cleaning reaction chamber of semiconductor manufacturing device |
| CN101840859A (en) * | 2009-03-20 | 2010-09-22 | 台湾积体电路制造股份有限公司 | Manufacturing method of semiconductor component |
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| US7097716B2 (en) * | 2002-10-17 | 2006-08-29 | Applied Materials, Inc. | Method for performing fluorocarbon chamber cleaning to eliminate fluorine memory effect |
| US7207339B2 (en) * | 2003-12-17 | 2007-04-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for cleaning a plasma enhanced CVD chamber |
| US20080102644A1 (en) * | 2006-10-31 | 2008-05-01 | Novellus Systems, Inc. | Methods for removing photoresist from a semiconductor substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101204705A (en) * | 2006-12-21 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method of cleaning chamber with silicon chip erosion |
| CN101220461A (en) * | 2007-01-08 | 2008-07-16 | 和舰科技(苏州)有限公司 | Method for cleaning reaction chamber of semiconductor manufacturing device |
| CN101840859A (en) * | 2009-03-20 | 2010-09-22 | 台湾积体电路制造股份有限公司 | Manufacturing method of semiconductor component |
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