CN102751346A - Solar cell - Google Patents

Solar cell Download PDF

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Publication number
CN102751346A
CN102751346A CN2012101207880A CN201210120788A CN102751346A CN 102751346 A CN102751346 A CN 102751346A CN 2012101207880 A CN2012101207880 A CN 2012101207880A CN 201210120788 A CN201210120788 A CN 201210120788A CN 102751346 A CN102751346 A CN 102751346A
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China
Prior art keywords
cell mesh
cell
terminal
mesh
band gap
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CN2012101207880A
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Inventor
都垠彻
金东均
金允基
金德起
崔永文
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN102751346A publication Critical patent/CN102751346A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

According to example embodiments, a solar cell includes a first unit portion, a second unit portion, and an insulating layer. The first and second unit portions may have different bandgaps, and the insulating layer may be between the first unit portion and the second unit portion.

Description

Solar cell
Technical field
Example embodiment relates to solar cell.
Background technology
Coal and oil are current fossil fuels as the energy.Yet fossil fuel can cause such as global warming and environmental pollution problems.Sunlight, tidal energy, wind energy and the underground heat that does not cause environmental pollution can be the alternative energy source that is used for replacing fossil fuel.
In the middle of them, the technology that sunlight is changed into electricity maintains the leading position.Researching and developing various materials and/or device and be used for effectively changing sunlight into electricity, the technology based on multilayer p-n junction structure and III-V family material that proposes has recently increased conversion efficiency.
Yet above-mentioned technology only can use the specific wavelength of the sunlight that comprises various wavelength to be used for sunlight is changed into.The multijunction structure that is designed to absorb the light of a plurality of wavelength can not provide high conversion efficiency, because the electricity that produces from multijunction structure is not effectively utilized.
Summary of the invention
Solar cell according to example embodiment comprises: the first module part; Second cell mesh; Insulating barrier is arranged between the first module part and second cell mesh; And a plurality of electric terminals, comprise first pair of terminal and second pair of terminal, wherein first pair of terminal is electrically connected to the first module part, and wherein second pair of terminal is electrically connected to second cell mesh.
The first module part can have first band gap, and second cell mesh can have second band gap, and wherein first band gap can be less than second band gap.
Difference between first band gap and second band gap can be in from about 0.3eV to the scope of about 0.8eV.
First band gap can be in from about 0.4eV to the scope of about 1.5eV, and second band gap can be in from about 1.0eV to the scope of about 2.5eV.
First band gap can be in from about 0.6eV to the scope of about 0.7eV, and second band gap can be in from about 1.0eV to the scope of about 1.2eV.
First band gap can be in from about 1.0eV to the scope of about 1.2eV, and second band gap can be in from about 1.6eV to the scope of about 1.8eV.
First module part can comprise Ge, and second cell mesh can comprise a kind of among crystalline silicon and the Cu-In-Se (CIS).
First module part can comprise that a kind of among crystalline silicon and the Cu-In-Se (CIS), second cell mesh can comprise a kind of in amorphous silicon, Cu-Ga-Se (CGS) and the polymer.
First module part, insulating barrier and second cell mesh can be stacked, and first pair of terminal can be in a side of insulating barrier, and second pair of terminal can be at the opposite side of insulating barrier.
First pair of terminal can comprise first plus end and first negative terminal, and first plus end and first negative terminal can be connected to the same side of first module part.
Second pair of terminal can comprise second plus end and second negative terminal, and second plus end and second negative terminal can be connected to the same side of second cell mesh.
Second pair of terminal can comprise second plus end and second negative terminal, and second plus end can be connected to a side of second cell mesh, and second negative terminal can be connected to the opposite side of second cell mesh.
First pair of terminal can comprise first plus end and first negative terminal, and first plus end can be connected to a side of first module part, and first negative terminal can be connected to the opposite side of first module part.
Second pair of terminal can comprise second plus end and second negative terminal, and second plus end and second negative terminal can be connected to the same side of second cell mesh.
Second pair of terminal can comprise second plus end and second negative terminal, and second plus end can be connected to a side of second cell mesh, and second negative terminal can be connected to the opposite side of second cell mesh.
The first module part can comprise crystalline silicon substrates, and second cell mesh can comprise among CdTe and the Cu-In-Ga-Se (CIGS).
In the first module part and second cell mesh at least one can comprise p type island region territory and N type zone, and each of p type island region territory and N type zone can be electrically connected in the terminal.
In the first module part and second cell mesh at least one can comprise transparent electrode layer and texturizing surfaces.
According to example embodiment, solar cell comprises: a plurality of cell mesh that stack gradually; And at least one insulating barrier, be arranged between the adjacent cell mesh, wherein each of a plurality of cell mesh comprises band gap, and the band gap of a plurality of cell mesh differs from one another, and each of a plurality of cell mesh is electrically connected to the pair of electrical terminal.
The band gap of a plurality of cell mesh can increase from bottom to top.
A plurality of cell mesh can comprise first module part, second cell mesh and the 3rd cell mesh; Wherein the band gap of first module part can be in from about 0.6eV to the scope of about 0.7eV; The band gap of second cell mesh can be in from about 1.0eV to the scope of about 1.2eV, and the band gap of the 3rd cell mesh can be in from about 1.6eV to the scope of about 1.8eV.
First module in a plurality of cell mesh part can comprise that a kind of among crystalline silicon and the Cu-In-Se (CIS), second cell mesh in a plurality of cell mesh can comprise a kind of in amorphous silicon, Cu-Ga-Se (CGS) and the polymer.
The paired electric terminal of each cell mesh can comprise plus end and negative terminal, and each in plus end and the negative terminal can be electrically connected in p type island region and the N type district.
In a plurality of cell mesh at least one can have the plus end and the negative terminal of the two opposite sides that is connected at least one cell mesh.
In a plurality of cell mesh at least one can comprise transparent electrode layer and texturizing surfaces.
Description of drawings
Example embodiment above characteristic and advantage with other will be to the description more specifically of non-limiting example shown in the drawings and obviously, similar in the accompanying drawings Reference numeral refers to identical parts all the time at different views.Accompanying drawing but is to illustrate the principle of example embodiment emphatically not necessarily in proportion.
In the accompanying drawings:
Fig. 1 is the schematic sectional view according to the solar cell of example embodiment.
Fig. 2 and Fig. 3 illustrate by the curve chart of the density of photocurrent that produces according to the solar cell of example embodiment as the function of sunlight wavelength.
Fig. 4 to Figure 15 is the sectional view according to the solar cell of example embodiment.
Embodiment
To more fully describe example embodiment with reference to accompanying drawing hereinafter, some example embodiment be shown in the accompanying drawing.Yet example embodiment can be implemented with different ways, and should not be interpreted as the embodiment that only limits to set forth here; But, provide these embodiment to make the disclosure thorough and complete, and the scope of example embodiment is fully conveyed to those of ordinary skills.In the accompanying drawing, for clarity, the thickness in layer and zone is by exaggerative.Similar in the accompanying drawings Reference numeral refers to similar element, therefore will omit their description.In the accompanying drawings, for clear, the part irrelevant with explanation is omitted.
To understand, when claiming that an element " is connected to " or during " being couple to " another element, it can be directly connected to or be couple to another element, perhaps can have the element of insertion.On the contrary, when claiming that an element " is directly connected to " or during " directly being couple to " another element, not having the element of insertion.As used herein, term " and/or " comprise any of one or more listed relevant items and all combinations.Other words that are used to describe the relation between element or the layer should explain in a similar fashion (for example, " and ... between " with " and directly exist ... between ", " with ... adjacent " with " and directly with ... adjacent ", " ... on " and " directly exist ... on ").
To understand, although can use a technical term here " first ", " second " etc. are described various elements, assembly, zone, layer and/or part, these elements, assembly, zone, layer and/or part should not be subject to these terms.These terms only are used for an element, assembly, zone, layer or part and another element, assembly, zone, layer or part are differentiated.Therefore, first element of below discussing, assembly, zone, layer or part can be called as second element, assembly, zone, layer or partly not deviate from the instruction of example embodiment.
For ease of describe can use here such as " ... under ", " ... following ", D score, " ... on ", " on " wait space relativity term to describe like the relation between an element shown in the drawings or characteristic and another (a bit) element or the characteristic.To understand, space relativity term is to be used for summarizing the different orientation of device in using or operating except that orientation shown in the accompanying drawing.For example, if the device in the accompanying drawing turns, be described to " " element of other elements or characteristic " under " or " below " will be in " top " of other elements or characteristic.Like this, exemplary term " ... following " just can contain on under two kinds of orientations.Device can be taked other orientations (revolve turn 90 degrees or in other orientations), and used here space relativity descriptor is done respective explanations.
Terminology used here only is in order to describe the purpose of specific embodiment, not really want to limit example embodiment.So the place is used, only if context has clearly statement in addition, otherwise singulative " " and " being somebody's turn to do " all are intended to comprise plural form simultaneously.What will be further understood that is; Term " comprises " and/or " comprising "; If here use; Specify the existence of said characteristic, integral body, step, operation, element and/or assembly, but do not got rid of the existence or the increase of one or more other characteristics, integral body, step, operation, element, assembly and/or its combination.
Here described example embodiment with reference to sectional view, these figure are the sketch map of idealized embodiment (and intermediate structure).Thereby the variation of the shape shown that is caused by for example manufacturing technology and/or tolerance is contingent.Therefore, example embodiment should not be interpreted as the given shape that is limited to the zone that illustrates here, but comprises by for example making the form variations that causes.For example, the injection region that is illustrated as rectangle can have sphering or crooked characteristic and/or change in the gradient rather than the binary from the injection region to non-injection region of the implantation concentration of its edge.Similarly, through injecting some injections that the district can cause the zone between surface of imbedding its generation injection of zone passage of imbedding that form.Therefore, zone shown in the drawings is that schematically their shape does not really want to illustrate the true shape of device area, does not really want to limit the scope of example embodiment yet in essence.
Only if definition separately, all terms used herein (comprising technical term and scientific terminology) all have the same implication of the those of ordinary skill institute common sense in the affiliated field of the present invention.What will be further understood that is; Such as defined term in the universaling dictionary; Only if clearly define, have and the corresponding to implication of they implications in the linguistic context of association area otherwise should be interpreted as, and should not be interpreted as Utopian or excessive formal meaning here.
Referring to figs. 1 through Fig. 3, the solar cell according to example embodiment is described.
Fig. 1 is the schematic sectional view according to the solar cell of example embodiment, and Fig. 2 and Fig. 3 illustrate by the curve chart of the density of photocurrent that produces according to the solar cell of example embodiment as the function of sunlight wavelength.
Solar cell 50 according to example embodiment can comprise two cell mesh, the lower unit part 10 and the last cell mesh 20 that stack gradually, and insulating barrier 30 can be arranged between cell mesh 10 and 20.Insulating barrier 30 can be isolated lower unit part 10 and last cell mesh 20 by electricity, and can comprise that for example dielectric substance is such as SiO 2But example embodiment is not limited thereto.For example, insulating barrier 30 can alternatively comprise silicon nitride, transparent insulation polymer, gas or liquid level etc., but example embodiment is not limited thereto.
Lower and upper cell mesh 10 and 20 comprises and can receive the photoelectric material that the light time produces electricity.Be used for lower unit part 10 and can have the different energy band gap with the material that is used for cell mesh 20.For example, the band gap of last cell mesh 20 can be greater than the band gap of lower unit part 10, the difference of the band gap between lower unit part 10 and the last cell mesh 20 can for about 0.3eV to about 0.8eV.If the band gap difference between cell mesh 10 and 20 is less than 0.3eV or greater than 0.8eV, then the obtained wave-length coverage of light can reduce or output voltage can not be optimised, thereby reduces the efficient that electric power produces.The band gap of lower unit part 10 can for about 0.4eV to about 1.5eV, and the band gap that goes up cell mesh 20 can be about 1.0eV about 2.5eV extremely.
The example that is used for the photoelectric material of cell mesh 10 and 20 comprises various polymer and semiconductor such as Si, Ge, Cu-In-Ga-Se (CIGS), CdTe, GaSb, InAs, PbS, GaP, ZnTe, CdS, AIP and/or GaAs, but example embodiment is not limited thereto.Crystalline silicon (Si) can have the band gap of about 1.1eV to about 1.2eV such as polycrystalline or monocrystalline silicon (Si), and amorphous silicon (Si) can have the higher band gap of about 1.6eV to about 1.7eV.Germanium (Ge) can have the band gap of about 0.6eV to about 0.7eV, and CdTe and GaAs can have the band gap of about 1.4eV to about 1.5eV.GaSb can have the band gap of about 0.7eV, and InAs and PbS can have the band gap of about 0.4eV.GaP and ZnTe can have the band gap of about 2.2eV to about 2.3eV, and CdS and AIP can have the band gap of about 2.4eV to about 2.5eV.According to the component ratio of In and Ga, CIGS can have about band gap of 1.0 to about 1.7eV.Mainly comprise In and do not have the cigs layer of Ga (just, comprising Cu-In-Se) can have the band gap of about 1.0eV basically as main component (being called " CIS " hereinafter).On the contrary, mainly comprise Ga and do not have the cigs layer of In (just, containing Cu-Ga-Se) can have the band gap of about 1.7eV basically as main component (being called " CGS " hereinafter).Known polymer has the band gap that is equal to or greater than about 1.7eV.
Above-mentioned material is divided into three groups according to the degree of band gap.First group of band gap with about 1.0eV to about 1.2eV, and can comprise crystalline silicon such as polysilicon and/or monocrystalline silicon and Cu-In-Se (CIS).Second group has the band gap that is equal to or greater than about 1.4eV, and can comprise amorphous silicon, CGS, CdTe, GaAs, GaP, ZnTe, CdS, AIP and polymer.Last group has the band gap that is equal to or less than about 0.7eV and can comprise Ge, GaSb, InAs and PbS.
In the middle of three groups, second group can be mainly used in cell mesh 20, and last group is mainly used in lower unit part 10.First group can be used for lower unit part 10 as the case may be or go up cell mesh 20.Yet use is not limited thereto, and according to the relative extent of band gap, every group can be used for lower unit part 10 or go up cell mesh 20.
For example, when the crystalline silicon in first group and/or CIS were used for cell mesh 20, the Ge in last group can be used for lower unit part 10.On the contrary, when the crystalline silicon in first group and/or CIS were used for lower unit part 10, amorphous silicon, CGS, CdTe, GaAs and/or polymer can be used for cell mesh 20.Under this situation, extremely the amorphous silicon and the CGS of the band gap of about 1.8eV can provide than CdTe and the higher efficient of GaAs (it has low relatively band gap in second group) to have about 1.6eV.
Lower and upper cell mesh 10 and 20 can form substrate or film.Film can form such as sputter through chemical deposition such as chemical vapor deposition (CVD) or physical deposition, but example embodiment is not limited thereto.
In the middle of above-mentioned material, crystalline semiconductor for example monocrystalline silicon substrate because its stable properties and relatively easy manufacturing process can be used for lower unit part 10.Under this situation, insulating barrier 30 can be deposited on the lower unit part 10 through CVD or other lamination process, and the film of another photoelectric material such as CdTe or CIGS can be deposited on the insulating barrier 30 to form cell mesh 20 then.
Each of lower unit part 10 and last cell mesh 20 can comprise pair of terminal 12,14,22 and 24, and this can comprise low resistance metal such as Cu, Ag etc. to terminal.Particularly, a pair of lower terminal 12 and 14 is arranged on below the lower unit part 10, and a pair of upper terminal 22 and 24 is arranged on the cell mesh 20.Therefore, the electric current that in each of lower and upper cell mesh 10 and 20, flows is through terminal 12 and 14 or 22 and 24 is outwards mobile separately.Electric current in the lower unit part 10 outwards flows through lower terminal 12 and 14, and the electric current of going up in the cell mesh 20 flows through upper terminal 22 and 24.Yet,,, can not pass through lower terminal 12 and 14 from the electric current of last cell mesh 20 so can not pass through upper terminal 22 and 24 from the electric current of lower unit part 10 because lower unit part 10 is electrically isolated from one with last cell mesh 20.
Terminal 12,14,22 and 24 position can be not limited to shown in Figure 1 those, and terminal 12,14,22 and 24 can be arranged on various other positions.For example, at least one in the lower terminal 12 and 14 can be arranged on the upper surface of lower unit part 10.Under this situation, thereby the part of the upper surface of lower unit part 10 can be opened wide at least one that hold in lower terminal 12 and 14, and is as shown in Figure 6.
When last cell mesh 20 comprised that material with relative high-energy band gap and lower unit part 10 comprise the material with relative low band gaps, the light that has relative short wavelength in the middle of the sunlight can be absorbed in the cell mesh 20 and produce had high-tension electric current.On the contrary, the electric current that light can be absorbed in the lower unit part 10 and generation has relative low-voltage that has relative long wavelength.
With reference to Fig. 2; When last cell mesh 20 comprises that CGS and lower unit part 10 comprise monocrystalline silicon; Last cell mesh 20 can absorbing wavelength have high-tension relatively electric current less than the light in the scope of about 700nm with generation, lower unit part 10 can absorbing wavelength has relative low-voltage to the light in the scope of about 1100nm at about 700nm with generation electric current.
With reference to Fig. 3; When last cell mesh 20 comprises that monocrystalline silicon and lower unit part 10 comprise Ge; Last cell mesh 20 can absorbing wavelength have high-tension relatively electric current less than the light in the scope of about 1100nm with generation, lower unit part 10 can absorbing wavelength has relative low-voltage to the light in the scope of about 1800nm at about 1100nm with generation electric current.
In above-mentioned solar cell 50, the size of the electric current that is produced by lower unit part 10 can be different from the size of the electric current that is produced by last cell mesh 20.Under this situation, be electrically connected to each other with lower unit part 10 if go up cell mesh 20, then the net current of solar cell can be by less current decision in the middle of the electric current of last cell mesh 20 and 10 generations of lower unit part.Therefore, the plussage of the electric current that is produced by one of cell mesh 10 and 20 can not be utilized, and this can reduce the efficient of solar cell.Yet according to example embodiment, last cell mesh 20 is isolated with lower unit part 10 electricity.Therefore, that produce and have different big or small electric currents and can collect separatedly and use and do not have current loss by last cell mesh 20 and lower unit part 10, thus can increase the efficient of solar cell.
Then, describe various solar cells in detail with reference to Fig. 4 to Fig. 8 according to example embodiment.
Fig. 4 to Fig. 8 is the sectional view according to the solar cell of example embodiment.
Fig. 4 illustrates solar cell 100, comprises the insulating barrier 130 of lower unit part 110, last cell mesh 120 and between.Lower unit part 110 can comprise the Ge substrate, and last cell mesh 120 can comprise that crystalline silicon is such as P type crystalline silicon substrate.Lower unit part 110 can have and last cell mesh 120 identical or essentially identical areas.Lower unit part 110 can be included in the terminal 112 and 114 under it, can comprise terminal 122 and 124 above that and go up cell mesh 120.
Near the lower unit part 110 or on the lower surface, can form p type island region 111 that contains p type impurity and the N type district 113 of containing N type impurity.P type island region 111 is connected to plus end 112, and N type district 113 is connected to negative terminal 114.
The p type island region 121 that contains p type impurity can be formed near or the upper surface of cell mesh 120 with the N type district 123 of containing N type impurity.P type island region 121 is connected to plus end 122, and N type district 123 is connected to negative terminal 124.N type district 123 can have the area bigger than p type island region 121.
In Fig. 4, terminal 112,114,122 and 124 can be arranged on the cell mesh 110 and 120 periphery separately, but their position is not limited thereto.
Fig. 5 illustrates solar cell 200, and wherein insulating barrier 230 is arranged on the lower unit part 210 that comprises crystalline silicon substrates, comprises that the last cell mesh 220 of photoelectric material such as CdTe or CIGS is formed on the insulating barrier 230.Last cell mesh 220 can comprise P type layer 250 and N type layer 260, and P type layer 250 comprises CdTe or CIGS, and N type layer 260 is arranged on the P type layer 250 and comprises CdS or ZnS etc.Last cell mesh 220 can also comprise and is arranged on the bottom electrode 240 under the P type layer 250 and is arranged on the top electrode 270 on the N type layer 260.Bottom electrode 240 can comprise transparent conductive material with top electrode 270, for example indium tin oxide (ITO), zinc oxide, indium-zinc oxide (IZO), indium oxide, tin-oxide, titanium oxide and/or cadmium oxide, but example embodiment is not limited thereto.Electrode 240 and 270 can as terminal 222 and 224 with P type layer 250 and N type layer 260 between be electrically connected.In addition, can form the passivation layer 290 that is arranged on below the lower unit part 210, reduce and/or prevent the electric loss in the lower unit part 210.
Each of insulating barrier 230 and last cell mesh 220 has the area less than lower unit part 210, makes the part of lower unit part 210, and for example two of lower unit part 210 peripheries can not be insulated layer 230 and cover.The terminal 212 and 214 that is used for lower unit part 210 can be formed on the part of exposure (just, not being capped) of lower unit part 210.The expose portion of the upper surface of lower unit part 210 can comprise near the p type island region that contains p type impurity 211 and the N type district 213 of containing N type impurity the upper surface that is positioned at lower unit part 210 or on the upper surface.The plus end 212 that is used for lower unit part 210 can be connected respectively to p type island region 211 and N type district 213 with negative terminal 214.
With reference to Fig. 5, the bottom electrode 240 of last cell mesh 220 is arranged on the insulating barrier 230.The P type layer 250 of last cell mesh 220, N type layer 260 and top electrode 270 are arranged on the bottom electrode 240.Each of layer 250,260 and 270 can be less than bottom electrode 240, and therefore, the part of bottom electrode 240 can be exposed.The plus end 222 that is used for cell mesh 220 can be arranged on the expose portion of bottom electrode 240.The negative terminal 224 that is used for cell mesh 220 can be arranged on top electrode 270.
In Fig. 5, the negative terminal 224 that is used for cell mesh 220 is arranged on the centre of cell mesh 220. Terminal 212 and 214 is arranged near two edges of lower unit part 210.Terminal 222 is near the edge of bottom electrode 240.Yet terminal position is not limited thereto.
Fig. 6 illustrates solar cell 300, and wherein insulating barrier 330 is arranged on the lower unit part 310 of crystalline silicon substrates for example.For example the last cell mesh 320 of four-layer structure can comprise bottom electrode 340, P type layer 350, N type layer 360 and top electrode 370, and the solar cell shown in the image pattern 5 is the same.P type layer 350 can comprise CdTe or CIGS, and N type layer 360 can comprise CdS or ZnS.
Yet, be different from solar cell shown in Figure 5, only the marginal portion of lower unit part 310 can be insulated layer 330 exposure (just, not being capped).Be used for the terminal 312 and one of 314 of lower unit part 310, for example plus end 312, can be arranged on the expose portion of upper surface of lower unit part 310.Another terminal of lower unit part 310, for example negative terminal 314, can be arranged on the lower surface of lower unit part 310.Therefore, the p type island region 311 of lower unit part 310 can be formed near the upper surface of lower unit part 310 or on upper surface, and N type district 313 can be formed near the lower surface of lower unit part 310 or on lower surface.
In last cell mesh 320, the plus end 322 that is used for cell mesh 320 can be arranged on the expose portion of the upper surface of bottom electrode 340, and the negative terminal 324 that is used for cell mesh 320 can be arranged on top electrode 370.
As shown in Figure 6, the plus end 322 that is used for the plus end 312 of lower unit part 310 and is used for cell mesh 320 can be separately positioned near the edge of lower unit part 310 and bottom electrode 340.On the other hand, the negative terminal 324 that is used for the negative terminal 314 of lower unit part 310 and is used for cell mesh 320 can be separately positioned near the central authorities of central authorities and top electrode 370 of lower unit part 310.Yet terminal 312,314,322 and 324 position are not limited thereto, and can be changed.
Fig. 7 illustrates solar cell 400, and wherein insulating barrier 430 is arranged on the lower unit part 410 of crystalline silicon substrates for example.For example the last cell mesh 420 of four-layer structure can comprise bottom electrode 440, P type layer 450, N type layer 460 and top electrode 470, and image pattern 5 is the same with solar cell shown in Figure 6.P type layer 450 can comprise CdTe or CIGS, and N type layer 460 can comprise CdS or ZnS.
Yet, being different from Fig. 5 and solar cell shown in Figure 6, the terminal 412 and 414 that is used for lower unit part 410 is arranged on the lower surface of lower unit part 410, and insulating barrier 430 is positioned on the upper surface that does not have the lower unit of expose portion part 410.The terminal 422 and 424 that is used for cell mesh 420 is set in place in the last cell mesh 420 of insulating barrier 430 tops.
Particularly, about lower unit part 410, p type island region 411 and N type district 413 are arranged near the lower surface of lower unit part 410.P type island region 411 is connected to plus end 412, and N type district 413 is connected to negative terminal 414, and the solar cell shown in the image pattern 4 is the same.
About last cell mesh 420; The plus end 422 that is used for cell mesh 420 can be arranged on the expose portion of the top surface of bottom electrode 440; The negative terminal 424 that is used for cell mesh 420 can be arranged on top electrode 470, and image pattern 5 is the same with solar cell shown in Figure 6.
Under the situation of Fig. 7, the plus end 422 that is used for the plus end 412 of lower unit part 410 and is used for cell mesh 420 can be separately positioned near the edge of lower unit part 410 and bottom electrode 440.The negative terminal 424 that is used for the negative terminal 414 of lower unit part 410 and is used for cell mesh 420 can be arranged near the central authorities of lower unit part 410 and top electrode 470, and the solar cell shown in the image pattern 6 is the same.Yet terminal 412,414,422 and 424 position are not limited thereto, and can be changed.
Fig. 8 illustrates the solar cell 500 with the structure that is similar to solar cell shown in Figure 7.Particularly, insulating barrier 530 is arranged on the lower unit part 510 of crystalline silicon substrates for example.For example the last cell mesh 520 of four-layer structure can comprise bottom electrode 540, P type layer 550, N type layer 560 and top electrode 570.P type layer 550 can comprise CdTe or CIGS, and N type layer 560 can comprise CdS or ZnS.The terminal 512 and 514 that is used for lower unit part 510 is arranged on below the lower unit part 510, and the terminal 522 and 524 of last cell mesh 520 is arranged on the cell mesh 520.
Yet, being different from solar cell shown in Figure 7, the upper surface of lower unit part 510 can be by veining.Therefore, be arranged on texture and bending and the veining on the upper surface of lower unit part 510 of insulating barrier 530 and last cell mesh 520 on the lower unit part 510.Because this texture, a part that is incident on the light on the veining upper surface of unit 520 can be reflected in the inside of cell mesh 520, thereby can increase by the amount of the light of solar cell absorption.The texturizing surfaces of lower unit part 510 can form such as the surface of processing lower unit parts 510 such as KOH through for example utilizing etchant.
With reference to Fig. 8, lower unit part 510 can comprise the high concentration impurities district, just p type island region 511 and N type district 513.The Resistance 515 of containing low concentration N type impurity can further be included in the lower unit part 510 and be arranged on the boundary vicinity of insulating barrier 530.Compound at boundary hole and electronics can be reduced in Resistance 515, and its holes and electronics produce in lower unit part 510.
Insulating barrier 590 can comprise SiO 2, silicon nitride or transparent insulation polymer etc., can be arranged on the lower surface of lower unit part 510 and be used between the terminal 512 and 514 of lower unit part 510.As the Resistance 515 at the place, top that is arranged on lower unit part 510, insulating barrier 590 also can reduce the compound of hole and electronics.
Insulating barrier 590 can have a plurality of contact holes that expose p type island region 511 and N type district 513, and the terminal 512 and 514 that is used for lower unit part 510 is connected to impurity range 511 and 513 through contact hole.Yet, can comprise that barrier layer (not shown) such as materials such as TiN can be arranged on the part of passing through contact holes exposing of basal surface of impurity range 511 and 513.
The terminal 512 and 514 that is used for lower unit part 510 can form through the for example material of plating such as Cu, and the terminal 522 and 524 that is used for cell mesh 520 can form through for example printing Ag cream etc.
The substrate that is used for lower unit part 510 can be the N type rather than the P type.When substrate was the N type, the p type island region 511 of lower unit part 510 can be greater than N type district 513, and was as shown in Figure 8.
Fig. 9 illustrates solar cell 600, and wherein insulating barrier 630 is between lower unit part 610 and last cell mesh 620.Lower unit part 610 among Fig. 9 comprises the p-i-n knot (perhaps alternative, n-i-p knot) that forms successively, and last cell mesh 620 comprises the p-i-n knot (perhaps alternative, n-i-p knot) that forms successively.
Lower unit part 610 can comprise crystalline silicon substrates 617 (such as polysilicon and/or monocrystalline silicon), be formed on the p type impurity range 611 in the top of substrate 617 and be formed on the n type impurity range 613 in the bottom of substrate 617.Alternatively, n type impurity range 613 can be formed in the top of substrate 617, and p type impurity range 611 can be formed in the bottom of substrate 617.Lower unit part 610 can also comprise pair of terminal 612 and 614, and pair of terminal 612 and 614 can be connected respectively to p type impurity range 611 and n type impurity range 613 through top electrode 615 and bottom electrode 616.Top electrode 615 can comprise transparent conductive material with bottom electrode 616, and such as ITO, zinc oxide, indium-zinc oxide (IZO), indium oxide, tin-oxide, titanium oxide and/or cadmium oxide, but example embodiment is not limited thereto.Alternatively, bottom electrode 616 can comprise metal and/or transparent conductive material.
Last cell mesh 620 can comprise amorphous silicon substrate 627, be formed on the p type impurity range 621 in the top of substrate 627 and be formed on the n type impurity range 623 in the bottom of substrate 627.Alternatively, n type impurity range 623 can be formed in the top of substrate, and p type impurity range 621 can be formed in the bottom of substrate 617.Last cell mesh 620 can also comprise pair of terminal 622 and 624, and this can be connected respectively to n type impurity range 623 and p type impurity range 621 through bottom electrode 640 and top electrode 670 to terminal 622 and 624.This can comprise low resistance metal such as Cu and Ag to terminal 622 and 624.Top electrode 670 can comprise transparent conductive material with bottom electrode 640, and such as ITO, zinc oxide, indium-zinc oxide (IZO), indium oxide, tin-oxide, titanium oxide and/or cadmium oxide, but example embodiment is not limited thereto.Although Fig. 9 illustrates solar cell 600; Wherein go up cell mesh 620 and lower unit part 610 and comprise the surface of non-texture; But example embodiment is not limited thereto, thereby last cell mesh 620 can be processed to form texturizing surfaces increase light absorption with lower unit part 610.
Although each of above-mentioned solar cell 50,100,200,300,400,500 and 600 comprises two cell mesh, have three of the different-energy band gap or more the multiple unit part can be stacked the insulating barrier of planting therebetween.Under this situation, energy bandgaps can increase from bottom to top.When the number of cell mesh was three, first group that among above-mentioned three groups, has mid-gap can be used for the temporary location part, and second group with high band gap can be used for cell mesh, and the 3rd group with low band gaps can be used for the lower unit part.
For example, Figure 10 illustrates solar cell 700, and it comprises first module part 710, second cell mesh 720 and the 3rd cell mesh 780 that stacks gradually.Thereby first insulating barrier 730 can be isolated the first module part 710 and second cell mesh 720 by electricity between the first module part 710 and second cell mesh 720.Thereby second insulating barrier 735 can be isolated second cell mesh 720 and the 3rd cell mesh 780 by electricity between second cell mesh 720 and the 3rd cell mesh 780.First insulating barrier 730 and second insulating barrier 735 both can be by dielectric substance such as SiO 2Process, but example embodiment is not limited thereto.For example, alternatively, insulating barrier 730 and 735 can comprise silicon nitride or transparent insulation polymer etc., but example embodiment is not limited thereto.
First module part 710 can comprise the photoelectric material with the band gap that is equal to or less than about 0.7eV, such as Ge, GaSb, InAs and PbS.Second cell mesh 720 can comprise having the photoelectric material of about 1.0eV to the band gap of about 1.2eV, and can comprise polysilicon, monocrystalline silicon and/or CIS, but example embodiment is not limited thereto.The 3rd cell mesh 780 can comprise the photoelectric material with the band gap that is equal to or greater than about 1.4eV, and can comprise amorphous silicon, CIGS, CGS, CdTe, GaAs, GaP, ZnTe, CdS, AIP and/or polymer, but example embodiment is not limited thereto.
Cell mesh 710,720 and 780 each can comprise paired terminal 712,714,722,724,782 and 784, this can comprise low resistance metal such as Cu and Ag to terminal. Terminal 712 and 714 can be connected to the lower surface of first module part 710 in pairs.Terminal 722 and 724 can be on the upper surface of second cell mesh 720 in pairs.Terminal 782 and 784 can be electrically connected to the 3rd cell mesh 780 via bottom electrode 740 and top electrode 770 respectively in pairs.Bottom electrode 740 can comprise transparent conductive material with top electrode 770, for example ITO, zinc oxide, indium-zinc oxide (IZO), indium oxide, tin-oxide, titanium oxide and/or cadmium oxide, but example embodiment is not limited thereto.Bottom electrode 740 can be between second insulating barrier 735 and the 3rd cell mesh 780.Top electrode 770 can be on the 3rd cell mesh 780.
Terminal 712,714,722,724,782 and 784 position are not limited to those shown in Figure 10, can revise according to the characteristic of foregoing solar cell 100,200,300,400,500 and 600.
Figure 11 illustrates solar cell 800, comprises the structure of above solar cell 100 and comprises formation second insulating barrier 835 and the 3rd cell mesh 880 above that.For succinctly, the description of the common structure in solar cell 100 and the solar cell 800 is omitted.Second insulating barrier 835 can comprise that dielectric substance is such as SiO 2, silicon nitride or transparent insulation polymer etc., but example embodiment is not limited thereto.
The 3rd cell mesh 880 can be formed on the cell mesh 120, and the 3rd cell mesh 880 can comprise the photoelectric material of band gap greater than the band gap of last cell mesh 120.For example, the 3rd cell mesh 880 can comprise amorphous silicon, CIGS, CGS and/or polymer, but example embodiment is not limited thereto.
Pair of terminal 882 and 884 can be electrically connected to the 3rd cell mesh 880 via bottom electrode 840 and top electrode 870 respectively.Bottom electrode 840 can comprise transparent conductive material with top electrode 870, for example ITO, zinc oxide, indium-zinc oxide (IZO), indium oxide, tin-oxide, titanium oxide and/or cadmium oxide, but example embodiment is not limited thereto.Bottom electrode 840 can be between second insulating barrier 835 and the 3rd cell mesh 880.Top electrode 870 can be on the 3rd cell mesh 880.Paired terminal 882 and 884 can comprise low resistance metal such as Cu and Ag, but example embodiment is not limited thereto.
Figure 12 illustrates solar cell 900, comprises above solar cell 200 and comprises formation second insulating barrier 935 and the 3rd cell mesh 980 above that.For succinctly, the description of analog structure is omitted in solar cell 200 and the solar cell 900.In order to hold the 3rd cell mesh 980, the terminal 224 among Figure 12 ' the position can be different from the position of the terminal 224 among Fig. 5.Second insulating barrier 935 can comprise that dielectric substance is such as SiO 2, silicon nitride or transparent insulation polymer etc., but example embodiment is not limited thereto.
The 3rd cell mesh 980 can be formed on the cell mesh 220, and the 3rd cell mesh 980 can comprise the photoelectric material of band gap greater than the band gap of last cell mesh 220.For example, the 3rd cell mesh 980 can comprise amorphous silicon and/or polymer, but example embodiment is not limited thereto.
Terminal 982 and 984 can be electrically connected to the 3rd cell mesh 980 via bottom electrode 940 and top electrode 970 respectively in pairs.Bottom electrode 940 can comprise transparent conductive material with top electrode 970, for example ITO, zinc oxide, indium-zinc oxide (IZO), indium oxide, tin-oxide, titanium oxide and/or cadmium oxide, but example embodiment is not limited thereto.Bottom electrode 940 can be between second insulating barrier 935 and the 3rd cell mesh 980.Top electrode 970 can be on the 3rd cell mesh 980.Paired terminal 982 and 984 and terminal 224 ' can comprise low resistance metal such as Cu and Ag, but example embodiment is not limited thereto.
Figure 13 illustrates solar cell 1000, comprises the structure of above solar cell 300 and further comprises formation second insulating barrier 935 and the 3rd cell mesh 980 above that.For succinctly, the description of analog structure is omitted in solar cell 300, solar cell 900 and the solar cell 1000.In order to hold the 3rd cell mesh 980, terminal 324 among Figure 13 ' the position be different from the position of terminal 324 among Fig. 6.Yet, terminal 324 identical materials among terminal 324 ' can comprise and Fig. 6.
Figure 14 illustrates solar cell 1100, comprises the structure of above solar cell 400 and comprises formation second insulating barrier 935 and the 3rd cell mesh 980 above that.For succinctly, the description of analog structure is omitted in solar cell 300, solar cell 900 and the solar cell 1100.In order to hold the 3rd cell mesh 980, terminal 424 among Figure 14 ' the position be different from the position of terminal 424 among Fig. 7.Yet, terminal 424 identical materials among terminal 424 ' can comprise and Fig. 7.
Figure 15 illustrates solar cell 1200, comprises the structure of above solar cell 500 and comprises formation second insulating barrier 1035 and the 3rd cell mesh 1080 above that.For succinctly, the description of analog structure is omitted in solar cell 1200 and the solar cell 500.Second insulating barrier 1035 can comprise that dielectric substance is such as SiO 2, silicon nitride or transparent insulation polymer etc., but example embodiment is not limited thereto.
The 3rd cell mesh 1080 can be formed on the cell mesh 520, and the 3rd cell mesh 1080 can comprise the photoelectric material of band gap greater than the band gap of last cell mesh 520.For example, the 3rd cell mesh 1080 can comprise amorphous silicon and/or polymer, but example embodiment is not limited thereto.
Terminal 1082 and 1084 can be electrically connected to the 3rd cell mesh 1080 via bottom electrode 1040 and top electrode 1070 respectively in pairs.Bottom electrode 1040 can comprise transparent conductive material with top electrode 1070, for example ITO, zinc oxide, indium-zinc oxide (IZO), indium oxide, tin-oxide, titanium oxide and/or cadmium oxide, but example embodiment is not limited thereto.Bottom electrode 1040 can be between second insulating barrier 1035 and the 3rd cell mesh 1080.Top electrode 1070 can be on the 3rd cell mesh 1080. Terminal 1082 and 1084 can comprise low resistance metal such as Cu and Ag in pairs, but example embodiment is not limited thereto.
As stated because the cell mesh with different-energy band gap isolated by electricity, so the electric current that produces by cell mesh can be collected being utilized fully, thereby increase the efficient of generating.
Although specifically illustrated and described some example embodiment, it will be appreciated by the skilled addressee that and to carry out the variation on form and the details therein and do not deviate from the spirit and the scope of claims.

Claims (21)

1. solar cell comprises:
The first module part;
Second cell mesh;
Insulating barrier is arranged between said first module part and said second cell mesh; And
A plurality of electric terminals comprise first pair of terminal and second pair of terminal,
Wherein said first pair of terminal is electrically connected to said first module part, and
Wherein said second pair of terminal is electrically connected to said second cell mesh.
2. solar cell as claimed in claim 1, wherein said first module partly has first band gap, and said second cell mesh has second band gap, and
Wherein said first band gap is less than said second band gap.
3. solar cell as claimed in claim 2, the difference between wherein said first band gap and said second band gap is in the scope of 0.3eV to 0.8eV.
4. solar cell as claimed in claim 2, wherein said first band gap are in the scope of 0.4eV to 1.5eV, and said second band gap is in the scope of 1.0eV to 2.5eV.
5. solar cell as claimed in claim 4; Wherein said first band gap in the scope of 0.6eV to 0.7eV and said second band gap in the scope of 1.0eV to 1.2eV, perhaps wherein said first band gap in the scope of 1.0eV to 1.2eV and said second band gap in the scope of 1.6eV to 1.8eV.
6. solar cell as claimed in claim 2; Wherein said first module comprises that partly Ge and said second cell mesh comprise that a kind of among crystalline silicon and the Cu-In-Se (CIS), perhaps wherein said first module comprise that partly a kind of and said second cell mesh among crystalline silicon and the Cu-In-Se (CIS) comprises a kind of in amorphous silicon, Cu-Ga-Se (CGS) and the polymer.
7. solar cell as claimed in claim 1, wherein said first module part, said insulating barrier and said second cell mesh are stacked, and
Wherein said first pair of terminal is in a side of said insulating barrier, and said second pair of terminal is at the opposite side of said insulating barrier.
8. solar cell as claimed in claim 7, wherein said first pair of terminal comprises first plus end and first negative terminal, and
Wherein said first plus end and said first negative terminal are connected to the same side of said first module part.
9. solar cell as claimed in claim 8, wherein said second pair of terminal comprises second plus end and second negative terminal,
Wherein said second plus end and said second negative terminal are connected to the same side of said second cell mesh, and perhaps said second plus end is connected to a side of said second cell mesh and said second negative terminal is connected to the opposite side of said second cell mesh.
10. solar cell as claimed in claim 7, wherein said first pair of terminal comprises first plus end and first negative terminal, and
Wherein said first plus end is connected to a side of said first module part, and said first negative terminal is connected to the opposite side of said first module part.
11. solar cell as claimed in claim 10, wherein said second pair of terminal comprises second plus end and second negative terminal,
Wherein said second plus end and said second negative terminal are connected to the same side of said second cell mesh, and perhaps said second plus end is connected to a side of said second cell mesh and said second negative terminal is connected to the opposite side of said second cell mesh.
12. solar cell as claimed in claim 1, wherein said first module partly comprises crystalline silicon substrates, and said second cell mesh comprises among CdTe and the Cu-In-Ga-Se (CIGS).
13. solar cell as claimed in claim 1, at least one in wherein said first module part and said second cell mesh comprise p type island region territory and N type zone, and
Each of wherein said p type island region territory and said N type zone is electrically connected in the said terminal.
14. solar cell as claimed in claim 1, at least one in wherein said first module part and said second cell mesh comprises transparent electrode layer and texturizing surfaces.
15. a solar cell comprises:
The a plurality of cell mesh that stack gradually; And
At least one insulating barrier is arranged between the adjacent cell mesh;
Each of wherein said a plurality of cell mesh comprises band gap, and the band gap of said a plurality of cell mesh differs from one another, and
Each of wherein said a plurality of cell mesh is electrically connected to the pair of electrical terminal.
16. solar cell as claimed in claim 15, the band gap of wherein said a plurality of cell mesh increases from bottom to top.
17. solar cell as claimed in claim 15, wherein said a plurality of cell mesh comprise first module part, second cell mesh and the 3rd cell mesh,
The band gap of wherein said first module part is in the scope of 0.6eV to 0.7eV, and the band gap of said second cell mesh is in the scope of 1.0eV to 1.2eV, and the band gap of said the 3rd cell mesh is in the scope of 1.6eV to 1.8eV.
18. solar cell as claimed in claim 15; First module in wherein said a plurality of cell mesh comprises that partly a kind of among crystalline silicon and the Cu-In-Se (CIS), second cell mesh in said a plurality of cell mesh comprise a kind of in amorphous silicon, Cu-Ga-Se (CGS) and the polymer.
19. solar cell as claimed in claim 15, wherein the paired electric terminal of each cell mesh comprises plus end and negative terminal, and
In wherein said plus end and the said negative terminal each is electrically connected in p type island region and the N type district.
20. solar cell as claimed in claim 19, at least one in wherein said a plurality of cell mesh has the plus end and the negative terminal of the two opposite sides that is connected at least one cell mesh.
21. solar cell as claimed in claim 15, at least one in wherein said a plurality of cell mesh comprises transparent electrode layer and texturizing surfaces.
CN2012101207880A 2011-04-22 2012-04-23 Solar cell Pending CN102751346A (en)

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Application publication date: 20121024