CN102751206B - Method for reinforcing integrated circuit internal lead bonding force - Google Patents
Method for reinforcing integrated circuit internal lead bonding force Download PDFInfo
- Publication number
- CN102751206B CN102751206B CN201210246504.2A CN201210246504A CN102751206B CN 102751206 B CN102751206 B CN 102751206B CN 201210246504 A CN201210246504 A CN 201210246504A CN 102751206 B CN102751206 B CN 102751206B
- Authority
- CN
- China
- Prior art keywords
- bonding
- lead
- reinforcing
- integrated circuit
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention discloses a method for reinforcing integrated circuit internal lead bonding force. The method includes: if lead bonding detection results show that lead bonding force does not meet the quality requirement, starting a high-temperature reinforcing procedure, and after the bonding tension is detected to be qualified, directly starting a cap sealing and subsequent procedures; taking reinforcing measures of ball bonding or ultrasonic bonding of an internal lead to realize direct metal-metal welding; and heating at an inert gas atmosphere or high vacuum environment until the temperature is 50%-80% of the melting point temperature of a low-melting-point bonding material of a bonding system, so that reinforcing of bonding strength and improving of bonding force are achieved. The method has the advantages that firstly, the bonding strength of defective bonding systems can be enhanced and bonding tension of the inner lead can be improved without addition of solidifiers; secondly, bonding strength is improved by a method of forming chemical bonds among metal atoms, and products are safe and reliable permanently; thirdly, no foreign matters are introduced, so that reliability of products can be guaranteed; fourthly, the method is simple in process and applicable to mass production; and fifthly, product yield and reliability can be improved.
Description
Technical field
The present invention relates to integrated circuit, furthermore, relate to integrated antenna package, specifically, relate to the bonding of internal lead of integrated circuit.
Background technology
In original integrated circuit, the electric link of chip and outside carries out bonding with Si-Al wire or spun gold (i.e. lead) and realizes between chip surface pad and the outer lead post of package casing.When lead is spun gold, adopt ball bonding; When lead is Si-Al wire, adopt ultrasonic bonding.After leading wire bonding, after visual inspection, wire bonding tensile test, performance of integrated circuits test passes, then carry out sealing cap.Mainly there are the following problems for this technology: 1. when the too low or rosin joint of leading wire bonding pulling force appears in outer lead end face, for civil product, at bonding point place, some solder carries out physics reinforcing, for technical grade, army grade, aerospace level product, then directly scraps or use of demoting; 2., when the too low or rosin joint of leading wire bonding pulling force appears in chip performance pad, due to the reason such as undersized, cannot reinforce, then directly scrap or use of demoting; 3. for multilead integrated circuit, as long as wherein bonding quality problem appears in a lead, whole Total Product will be made to demote or scrap, cause damage.
Through retrieval, the patent application relating to leads of IC only has 1, namely No. 200510003089.8 " improving the method for leading wire bonding reliability in integrated circuit ", this application part is before dress knot chip and pressure welding, increase electroplating work procedure, described electroplating work procedure is the original metal level in method removing lead styletable face with sand milling, then electronickelling, only the lead post part of plating integrated circuit pedestal.But this technology does not solve the problems referred to above of integrated circuit.There is no the report reinforcing internal lead of integrated circuit bonding force at present.
Summary of the invention
The object of this invention is to provide a kind of method of reinforcing internal lead of integrated circuit bonding force, to reinforce the bond strength of bad bonding point, promote leading wire bonding pulling force, make the size of internal lead of integrated circuit bond-pull and consistency be satisfied with the requirement of the relevant criterion such as GJB597A-96 " semiconductor integrated circuit generic specification ", GJB2438A " hybrid integrated circuit general specification ", GJB548B " microelectronic component Test Methods And Procedures ".
During integrated circuit is produced, after chip dress knot and inspection, carry out wire bonding, carry out lead strain detection with that.Past, after wire bonding, is selected the qualified process product of lead strain and directly enters sealing cap operation, and the defective process product of lead strain carries out downshift and reprocesses or scrap process.In order to avoid loss, the method of the reinforcing internal lead of integrated circuit bonding force that inventor proposes is: wire bond sense result shows if process product lead strain meets process quality requirement by the gross, then directly enter sealing cap operation, if lead strain does not meet process quality requirement, then enter high temperature and reinforce operation, after carrying out bond-pull detection again, directly enter sealing cap operation and subsequent handling thereof; Inventor according to metallic atom under uniform temperature, pressure, time conditions, phase counterdiffusion, the principle forming chemical bond, strengthen adhesion between metallic atom, the measure taked is the product for not meeting quality requirement, first carry out lead ball bonding or ultrasonic bonding, realize metal and weld with the direct of metal; Again in inert gas atmosphere or high vacuum environment, be heated to 50% ~ 80% of bonding system low melting point bonding material melting temperature, the object of reinforcing bond strength, forming ohmic contact, promoting bonding force can be reached.
Above-mentioned metal welds with the direct of metal, refers to the direct welding of other leads except gold-aluminium leading wire bonding system, and this is because gold-aluminium leading wire bonding system at high temperature easily forms insulating properties intermetallic compound, admittedly can not be selected to the method.
The specific practice of above-mentioned lead ball bonding utilizes ball bonding machine, under nitrogen protection, the mode that part spun gold being exposed chopper is struck sparks by high voltage electric spark is burnt till spherical instantaneously, again by broadsword v.broadsword plus-pressure, add ultrasonic condition under, and be contained in the chip that outer casing base heats and carry out bonding; When adding ultrasonic, heating-up temperature 100 DEG C ~ 250 DEG C, when not adding ultrasonic, heating-up temperature 300 DEG C ~ 400 DEG C; The specific practice of lead ultrasonic bonding utilizes ultrasonic bonding machine, by the Si-Al wire exposing chopper part plus-pressure, add ultrasonic condition under, carry out bonding with the chip be contained on outer casing base;
The above-mentioned process conditions heated in inert gas atmosphere are: inert gas is nitrogen (N
2) or argon gas (Ar
2), refer to peak temperature heating time 30 minutes to 5 hours heating time, containing heating up and temperature fall time, the concrete time is adjusted by the height of heating-up temperature.
The process conditions heated in above-mentioned high vacuum environment are: vacuum degree control is 5 × 10
-3below Pa, bonding material refers to the bi-material in bonding system, i.e. the material of bond area on lead material and pad, refers to peak temperature heating time 30 minutes to 5 hours heating time, not containing heating up and temperature fall time, the concrete time is adjusted by the height of heating-up temperature.
The inventive method has following characteristics: 1. do not need external reinforcement compound, can strengthen the bond strength of bad bonding system, promotes leading wire bonding pulling force; 2. adopt the method forming chemical bond between metallic atom to promote bond strength, product permanent secure is reliable; 3. do not introduce exogenous impurity, guarantee the reliability of product; 4. technique simple possible, is applicable to produce in enormous quantities; 5. rate of finished products and the reliability of product is improved.The product that the inventive method is produced reaches the B level (monolithic integrated circuit), H level (hybrid integrated circuit) and the above quality level that specify in standard.
The present invention is applicable to other leading wire bonding systems except gold-aluminium leading wire bonding system.
Accompanying drawing explanation
Fig. 1 is integrated circuit package structure schematic diagram, and Fig. 2 is original integrated circuit production procedure block diagram, and Fig. 3 is integrated circuit production procedure block diagram of the present invention.In Fig. 1,1 is package casing base, and 2 is chip, and 3 is lead, and 4 is bonding point, and 5 is chip aluminum pad or gold solder dish, and 6 is solder, and 7 is outer lead post, and 8 is end face.
Embodiment
Embodiment:
During Guizhou Zhenhua scene semiconductor company integrated circuit is produced, the package casing outer lead styletable face nickel plating of product, lead are Si-Al wire, chip bonding pad is aluminum pad, and pin end face is aluminium-nickel bonding system, chip bonding pad is aluminium-aluminium bonding system.Original production technology is as Fig. 1 and 2: first prepare to produce raw material, comprise chip, lead-in wire, cover plate, Guan Ji, solder etc., qualified to the inspection of raw and process materials, carries out chip dress knot and inspection; Carry out lead-in wire ultrasonic bonding afterwards, carry out lead strain detection with that.Select qualified process product and directly enter sealing cap operation, defective process product carries out downshift and reprocesses or scrap process.
Adopt method of the present invention, production technology is as Fig. 3, wire bond sense result shows if process product meets process quality requirement by the gross, then directly enter sealing cap operation, if do not meet process quality requirement, then enter high temperature reinforce operation, then carry out bond-pull detect qualified after, directly enter sealing cap operation and subsequent handling thereof; For the product not meeting quality requirement, first carry out lead ultrasonic bonding, realize metal and weld with the direct of metal; Again in the sintering furnace of logical high pure nitrogen, be heated to 450 DEG C (fusing point 660 DEG C of aluminium, fusing points of nickel: 1453 DEG C), constant temperature 1 hour, the object of reinforcing bond strength, forming ohmic contact, promoting bonding force can be reached, obtain qualified products.
Claims (5)
1. reinforce the method for internal lead of integrated circuit bonding force for one kind, it is characterized in that wire bond sense result shows if process product meets process quality requirement by the gross, then directly enter sealing cap operation, if do not meet process quality requirement, then enter high temperature and reinforce operation, after carrying out bond-pull detection again, directly enter sealing cap operation and other subsequent handlings; The measure taked for the product not meeting quality requirement first carries out lead ball bonding or ultrasonic bonding, realizes metal and weld with the direct of metal; Again in inert gas atmosphere or vacuum environment, be heated to 50% ~ 80% of bonding system low melting point bonding material melting temperature, the object of reinforcing bond strength, forming ohmic contact, promoting bonding force can be reached.
2. the method for claim 1, is characterized in that described metal welds with the direct of metal, refers to the direct welding of the lead except gold-aluminium leading wire bonding system.
3. the method for claim 1, it is characterized in that the specific practice of described lead ball bonding uses ball bonding machine, the mode that the part under nitrogen protection spun gold being exposed chopper is struck sparks by high voltage electric spark is burnt till spherical instantaneously, again by broadsword v.broadsword plus-pressure, add ultrasonic condition under, and be contained in the chip that outer casing base heats and carry out bonding; The specific practice of lead ultrasonic bonding be with ultrasonic bonding machine by the Si-Al wire exposing chopper part plus-pressure, add ultrasonic condition under, carry out bonding with the chip be contained on outer casing base.
4. the method for claim 1, is characterized in that the described process conditions heated in inert gas atmosphere are: inert gas is nitrogen or argon gas, 30 minutes to 5 hours heating time.
5. the method for claim 1, is characterized in that the process conditions heated in described vacuum environment are: vacuum degree control is 5 × 10
-3below Pa, bonding material is the material of bond area on lead material and pad, 30 minutes to 5 hours heating time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210246504.2A CN102751206B (en) | 2012-07-17 | 2012-07-17 | Method for reinforcing integrated circuit internal lead bonding force |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210246504.2A CN102751206B (en) | 2012-07-17 | 2012-07-17 | Method for reinforcing integrated circuit internal lead bonding force |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102751206A CN102751206A (en) | 2012-10-24 |
| CN102751206B true CN102751206B (en) | 2015-01-21 |
Family
ID=47031283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210246504.2A Active CN102751206B (en) | 2012-07-17 | 2012-07-17 | Method for reinforcing integrated circuit internal lead bonding force |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102751206B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113899692B (en) * | 2021-09-26 | 2024-04-09 | 湖北航天技术研究院计量测试技术研究所 | Method for verifying lead bonding strength test capability of semiconductor device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1716556A (en) * | 2005-06-01 | 2006-01-04 | 中国振华集团风光电工厂 | Method for improving leading wire bonding reliability in integrated circuit |
| CN200988128Y (en) * | 2006-12-22 | 2007-12-12 | 中国电子科技集团公司第四十五研究所 | Keying head device |
| CN101086951A (en) * | 2006-06-05 | 2007-12-12 | 中南大学 | Bonding force monitoring system of ultrasonic bonding process |
| CN101673693A (en) * | 2009-09-22 | 2010-03-17 | 贵州振华风光半导体有限公司 | Bonding system of high-reliability thick-film mixed integrated circuit and manufacturing method thereof |
-
2012
- 2012-07-17 CN CN201210246504.2A patent/CN102751206B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1716556A (en) * | 2005-06-01 | 2006-01-04 | 中国振华集团风光电工厂 | Method for improving leading wire bonding reliability in integrated circuit |
| CN101086951A (en) * | 2006-06-05 | 2007-12-12 | 中南大学 | Bonding force monitoring system of ultrasonic bonding process |
| CN200988128Y (en) * | 2006-12-22 | 2007-12-12 | 中国电子科技集团公司第四十五研究所 | Keying head device |
| CN101673693A (en) * | 2009-09-22 | 2010-03-17 | 贵州振华风光半导体有限公司 | Bonding system of high-reliability thick-film mixed integrated circuit and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102751206A (en) | 2012-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI496900B (en) | Copper alloy bonding wire for semiconductors | |
| JP5064577B2 (en) | Ball bonding wire | |
| WO2013018238A1 (en) | Ball bonding wire | |
| Guth et al. | End-of-life investigation on the. XT interconnect technology | |
| Khaja et al. | Reliable packaging technologies for power electronics: Diffusion soldering and heavy copper wire bonding | |
| CN104037099A (en) | Automatic rework processes for non-stick conditions in wire bonding operations | |
| CN102751206B (en) | Method for reinforcing integrated circuit internal lead bonding force | |
| Hang et al. | Effect of electronic flame off parameters on copper bonding wire: Free-air ball deformability, heat affected zone length, heat affected zone breaking force | |
| Zhang et al. | Experiments and reliability research on bonding process of micron copper wire and nanometer gold layer | |
| Hutter et al. | Comparison of different technologies for the die attach of power semiconductor devices conducting active power cycling | |
| Jiang et al. | Study of 6 mil Cu wire replacing 10–15 mil Al wire for maximizing wire-bonding process on power ICs | |
| Jo et al. | The properties of Cu sinter paste for pressure sintering at low temperature | |
| CN101894770B (en) | Pre-oxidation method of semiconductor packaging and routing surface and pre-oxidation layer structure thereof | |
| JP5996853B2 (en) | Ball bonding wire | |
| WO2016194451A1 (en) | Au-BASED SOLDERING BALL, CERAMIC ELECTRONIC COMPONENT SEALED OR BONDED THEREWITH, AND METHOD FOR EVALUATING BONDING RELIABILITY OF SAID Au-BASED SOLDERING BALL | |
| Ha et al. | Thermal and mechanical properties of flip chip package with Au stud bump | |
| JPH11126788A (en) | Ic-chip connecting gold alloy wire | |
| JP2007019349A (en) | Bonding wire | |
| CN101488482B (en) | Semi-conductor package structure and manufacturing method thereof | |
| CN105097742A (en) | Wire bonding structure and wire bonding method | |
| CN104124215B (en) | Packaging structure and packaging technology capable of synchronously completing welding, bonding and sealing | |
| Cao et al. | Effect of silver alloy bonding wire properties on bond strengths and reliability | |
| CN104241154B (en) | Flip chip welding spot wettability judgment method and chip welding method | |
| Li et al. | Effects of multiple reflow cycles on the reliability of Sn-Sb solders for power electronics packaging | |
| JP3585993B2 (en) | Gold wire for bonding |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 550018 Guizhou Province, Guiyang city new North Avenue No. 238 Patentee after: Guizhou Zhenhua Fengguang Semiconductor Co.,Ltd. Address before: 550018 Guizhou Province, Guiyang city new North Avenue No. 238 Patentee before: GUIZHOU ZHENHUA FENGGUANG SEMICONDUCTOR Co.,Ltd. |