CN102751161B - Be applied to the semiconductor heating ion migration tube structure of ionic migration spectrum detector - Google Patents
Be applied to the semiconductor heating ion migration tube structure of ionic migration spectrum detector Download PDFInfo
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- CN102751161B CN102751161B CN201210259875.4A CN201210259875A CN102751161B CN 102751161 B CN102751161 B CN 102751161B CN 201210259875 A CN201210259875 A CN 201210259875A CN 102751161 B CN102751161 B CN 102751161B
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Abstract
The present invention relates to a kind of semiconductor heating ion migration tube structure being applied to ionic migration spectrum detector, belong to Ion mobility spectrometry field.This semiconductor heating ion migration tube structure being applied to ionic migration spectrum detector comprises ceramic insulation body and is surrounded on tube chamber in described ceramic insulation body, and described ceramic insulating tube is external is coated with semiconductor thermoelectric film.Utilize this semiconductor thermoelectric film significantly can promote the electric conversion efficiency of transference tube, and then electric energy needed for the entirety of reduction transference tube survey meter, meanwhile, the working temperature of semiconductor thermoelectric film itself can reach more than 300 DEG C, when cleaning transference tube, effectively required time can be shortened.And the semiconductor heating ion migration tube structure being applied to ionic migration spectrum detector of the present invention, its structure is simple, and with low cost, range of application is also comparatively extensive.
Description
Technical field
The present invention relates to Ion mobility spectrometry field, particularly ion mobility spectrometry Detection Techniques field, specifically refer to a kind of semiconductor heating ion migration tube structure being applied to ionic migration spectrum detector.
Background technology
Ion mobility spectrometry Detection Techniques are in micro-trace detection field extensive application.Especially portable ionic migration spectrum detector plays the advantage of its uniqueness in public safety check occasion.Transference tube is one of them critical component, and the quality of its performance decides the quality of ionic migration spectrum detector performance.To the mode of heating of transference tube and the control of temperature stability thereof, direct relation power supply outfit and the length of continuous service time of ionic migration spectrum detector.
Traditional Ion transfer pipe heating method is, is heated by the electric heating diaphragm 3 pairs of ionic tubes be wrapped in outside ionic tube.Its structure as shown in Figure 1.The heat transfer route of transference tube is: conduct to ionic tube metal tube 2 from electric heating diaphragm 3, then conducts to the ceramic insulating layer 1 in it, to reach the object of heating to transference tube tube chamber 4 by metal tube 2.Because electric heating diaphragm 3 can not be close to transference tube metal tube 2 surface completely, thus heat is transmitted to the process of transference tube metal tube 2 from electric heating diaphragm 3 and there is certain loss.Moreover, transference tube metal tube 2 is also dispersed with some structural elements installing connection, can not be very perfect to the Insulation of transference tube metal tube 2.So be exposed to some loss of dispelling the heat again of outer transference tube metal tube 2.The existence of above-mentioned 2 dominant loss factors, determines and adopts the heat conduction efficiency of electric heating diaphragm mode of heating lower.
In addition, the restriction of bonding colloid heat resistance in powered heating membrane 3 self structure, electric heating diaphragm 3 maximum operating temperature is at about 200 DEG C.This just makes, when transference tube carries out cleaning procedure, because cavity temperature is not high enough, must spend longer scavenging period.
Summary of the invention
The object of the invention is to overcome above-mentioned shortcoming of the prior art, a kind of hot-spraying technique that utilizes is provided to spray semiconductor thermoelectric film on the ceramic body of transference tube, thus significantly promote the electric conversion efficiency of transference tube, and then electric energy needed for the entirety of reduction transference tube survey meter, simultaneously, the working temperature of semiconductor thermoelectric film itself can reach more than 300 DEG C, when cleaning transference tube, effectively can shorten required time, and structure is simple, with low cost, range of application is comparatively widely used in the semiconductor heating ion migration tube structure of ionic migration spectrum detector.
In order to realize above-mentioned object, the semiconductor heating ion migration tube structure being applied to ionic migration spectrum detector of the present invention has following formation:
This semiconductor heating ion migration tube structure being applied to ionic migration spectrum detector comprises ceramic insulation body and is surrounded on tube chamber in described ceramic insulation body, and described ceramic insulating tube is external is coated with semiconductor thermoelectric film.
This is applied in the semiconductor heating ion migration tube structure of ionic migration spectrum detector, and described semiconductor thermoelectric film is tin oxide semiconductor Electric radiant Heating Film.
This is applied in the semiconductor heating ion migration tube structure of ionic migration spectrum detector, and described semiconductor thermoelectric film is formed at described ceramic insulation outer surface of tube body by hot-spraying technique spraying.
This is applied in the semiconductor heating ion migration tube structure of ionic migration spectrum detector, the two ends of described ceramic insulation body are also respectively arranged with two beckets, and described semiconductor heating ion migration tube structure is fixedly connected on the structure member of described ionic migration spectrum detector by described two beckets.
This is applied in the semiconductor heating ion migration tube structure of ionic migration spectrum detector, and two described beckets are fixedly welded on the two ends of described ceramic insulation body respectively.
This is applied in the semiconductor heating ion migration tube structure of ionic migration spectrum detector, and described semiconductor thermoelectric film is covered on the ceramic insulation outer surface of tube body between two described beckets.
Have employed the semiconductor heating ion migration tube structure being applied to ionic migration spectrum detector of this invention, comprise ceramic insulation body due to it and be surrounded on tube chamber in described ceramic insulation body, and described ceramic insulating tube is external is coated with semiconductor thermoelectric film.Utilize this semiconductor thermoelectric film significantly can promote the electric conversion efficiency of transference tube, and then electric energy needed for the entirety of reduction transference tube survey meter, meanwhile, the working temperature of semiconductor thermoelectric film itself can reach more than 300 DEG C, when cleaning transference tube, effectively required time can be shortened.And the semiconductor heating ion migration tube structure being applied to ionic migration spectrum detector of the present invention, its structure is simple, and with low cost, range of application is also comparatively extensive.
Accompanying drawing explanation
The Rotating fields schematic diagram of the transference tube that Fig. 1 is traditional.
Fig. 2 is the semiconductor heating ion migration tube structure schematic diagram being applied to ionic migration spectrum detector of the present invention.
Embodiment
In order to the technology page of the present invention more clearly can be understood, describe in detail especially exemplified by following examples.
Referring to shown in Fig. 2, is the semiconductor heating ion migration tube structure schematic diagram being applied to ionic migration spectrum detector of the present invention.
In one embodiment, this semiconductor heating ion migration tube structure being applied to ionic migration spectrum detector comprises ceramic insulation body 1 and is surrounded on the tube chamber 4 in described ceramic insulation body 1, and described ceramic insulating tube is external is coated with semiconductor thermoelectric film 5.Described semiconductor thermoelectric film 5 is formed at the tin oxide semiconductor Electric radiant Heating Film 5 of the outer surface of described ceramic insulation body 1 by hot-spraying technique spraying.
In a preferred embodiment, the two ends of described ceramic insulation body 1 are also welded with two beckets 6 respectively, and described semiconductor heating ion migration tube structure is fixedly connected on the structure member of described ionic migration spectrum detector by described two beckets 6.Described semiconductor thermoelectric film 5 is covered on the outer surface of the ceramic insulation body 1 between two described beckets 6.
In an application of the invention, the semiconductor heating ion migration tube structure being applied to ionic migration spectrum detector of the present invention adopts ceramic welding technique by two welding metal rings in the two ends of ionic tube insulating ceramics body.Becket can build various structural element, with satisfied, the demand connected is installed.At the outer surface hot-spraying technique of ionic tube insulating ceramics body, tin oxide semiconductor Electric radiant Heating Film is covered thereon equably.
The heat transfer route of the ion migration tube structure formed thus is: semiconductor thermoelectric film passes to ionic tube insulating ceramics pipe, then is heated ionic tube cavity by insulating ceramics pipe.This link of metal tube has been lacked in heat trnasfer link, be painted on insulating ceramics tube surfaces (being a kind of connection state between semiconductor thermoelectric film and insulating ceramics tube surfaces), so the loss in heat transfer process is very little because it is semiconductor thermoelectric film.Therefore, the electric conversion efficiency of these heating means of semiconductor thermoelectric film greatly increases, and the use of the overall electric energy of survey meter is just minimized.
Meanwhile, the working temperature of semiconductor thermoelectric film itself can reach more than 300 DEG C, when performing the operation of ionic tube cleaning procedure, under cavity temperature can be set in higher temperature conditions, so the time of cleaning can shorten a lot.
Have employed the semiconductor heating ion migration tube structure being applied to ionic migration spectrum detector of this invention, comprise ceramic insulation body due to it and be surrounded on tube chamber in described ceramic insulation body, and described ceramic insulating tube is external is coated with semiconductor thermoelectric film.Utilize this semiconductor thermoelectric film significantly can promote the electric conversion efficiency of transference tube, and then electric energy needed for the entirety of reduction transference tube survey meter, meanwhile, the working temperature of semiconductor thermoelectric film itself can reach more than 300 DEG C, when cleaning transference tube, effectively required time can be shortened.And the semiconductor heating ion migration tube structure being applied to ionic migration spectrum detector of the present invention, its structure is simple, and with low cost, range of application is also comparatively extensive.
In this description, the present invention is described with reference to its specific embodiment.But, still can make various amendment and conversion obviously and not deviate from the spirit and scope of the present invention.Therefore, specification and accompanying drawing are regarded in an illustrative, rather than a restrictive.
Claims (4)
1. one kind is applied to the semiconductor heating ion migration tube structure of ionic migration spectrum detector, described ion migration tube structure comprises ceramic insulation body and is surrounded on the tube chamber in described ceramic insulation body, it is characterized in that, described ceramic insulating tube is external is coated with semiconductor thermoelectric film, described semiconductor thermoelectric film is formed at described ceramic insulation outer surface of tube body by hot-spraying technique spraying, the two ends of described ceramic insulation body are also respectively arranged with two beckets, described semiconductor heating ion migration tube structure is fixedly connected on the structure member of described ionic migration spectrum detector by described two beckets.
2. the semiconductor heating ion migration tube structure being applied to ionic migration spectrum detector according to claim 1, it is characterized in that, described semiconductor thermoelectric film is tin oxide semiconductor Electric radiant Heating Film.
3. the semiconductor heating ion migration tube structure being applied to ionic migration spectrum detector according to claim 1, it is characterized in that, two described beckets are fixedly welded on the two ends of described ceramic insulation body respectively.
4. the semiconductor heating ion migration tube structure being applied to ionic migration spectrum detector according to claim 1, it is characterized in that, described semiconductor thermoelectric film is covered on the ceramic insulation outer surface of tube body between two described beckets.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210259875.4A CN102751161B (en) | 2012-07-25 | 2012-07-25 | Be applied to the semiconductor heating ion migration tube structure of ionic migration spectrum detector |
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| CN201210259875.4A CN102751161B (en) | 2012-07-25 | 2012-07-25 | Be applied to the semiconductor heating ion migration tube structure of ionic migration spectrum detector |
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| CN102751161A CN102751161A (en) | 2012-10-24 |
| CN102751161B true CN102751161B (en) | 2015-08-05 |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109240371A (en) * | 2018-09-30 | 2019-01-18 | 镇江华智睿安物联科技有限公司 | A kind of quick temperature-controlling system and its method applied to ion mobility spectrometry |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2266249Y (en) * | 1996-03-14 | 1997-10-29 | 徐峰章 | Frost removal for automotive windscreen |
| CN1708189A (en) * | 2005-03-23 | 2005-12-14 | 冷同桂 | Composite metal electrothermal film sol and method for producing electroheating tube with the same |
| CN2768367Y (en) * | 2005-01-13 | 2006-03-29 | 林正平 | Coated tubular heater |
| CN201234365Y (en) * | 2008-07-24 | 2009-05-06 | 马孟骅 | Crystalline glass electric heating membrane heating cooking board |
| CN101800150A (en) * | 2010-03-25 | 2010-08-11 | 中国科学院合肥物质科学研究院 | High-filed asymmetrical wave ion transference tube and production method thereof |
| CN101819179A (en) * | 2010-04-01 | 2010-09-01 | 公安部第三研究所 | Single-pipe double-chamber suction test paper dual-sampling cation and anion mobility spectrum dual measuring pipe |
| CN102414779A (en) * | 2009-05-01 | 2012-04-11 | 萨莫芬尼根有限责任公司 | Ion transfer tube and mass spectrometer system |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2506929Y (en) * | 2001-09-14 | 2002-08-21 | 吴聚元 | Electric heating membrane heating pipe |
| CN201935894U (en) * | 2010-12-31 | 2011-08-17 | 同方威视技术股份有限公司 | Ion mobility spectrometry and sample injection device used for same |
-
2012
- 2012-07-25 CN CN201210259875.4A patent/CN102751161B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2266249Y (en) * | 1996-03-14 | 1997-10-29 | 徐峰章 | Frost removal for automotive windscreen |
| CN2768367Y (en) * | 2005-01-13 | 2006-03-29 | 林正平 | Coated tubular heater |
| CN1708189A (en) * | 2005-03-23 | 2005-12-14 | 冷同桂 | Composite metal electrothermal film sol and method for producing electroheating tube with the same |
| CN201234365Y (en) * | 2008-07-24 | 2009-05-06 | 马孟骅 | Crystalline glass electric heating membrane heating cooking board |
| CN102414779A (en) * | 2009-05-01 | 2012-04-11 | 萨莫芬尼根有限责任公司 | Ion transfer tube and mass spectrometer system |
| CN101800150A (en) * | 2010-03-25 | 2010-08-11 | 中国科学院合肥物质科学研究院 | High-filed asymmetrical wave ion transference tube and production method thereof |
| CN101819179A (en) * | 2010-04-01 | 2010-09-01 | 公安部第三研究所 | Single-pipe double-chamber suction test paper dual-sampling cation and anion mobility spectrum dual measuring pipe |
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| CN102751161A (en) | 2012-10-24 |
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