CN102749702B - Red exposure eliminating method of hand-held semiconductor laser active night-vision device - Google Patents
Red exposure eliminating method of hand-held semiconductor laser active night-vision device Download PDFInfo
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- CN102749702B CN102749702B CN201210224410.5A CN201210224410A CN102749702B CN 102749702 B CN102749702 B CN 102749702B CN 201210224410 A CN201210224410 A CN 201210224410A CN 102749702 B CN102749702 B CN 102749702B
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Abstract
The invention provides a red exposure eliminating method of a hand-held semiconductor laser active night-vision device, which is suitable for semiconductor laser active night-vision devices and belongs to the technical field of laser night vision. The red exposure eliminating method provided by the invention mainly aims at the red exposure problem of near-infrared semiconductor laser night detection and is characterized by comprising the steps of: utilizing a 915nm semiconductor pulse laser active illumination light source; utilizing a CCD (Charge Coupled Device) in which the model number of a shimmer charge coupling component is WAT-902HB2S; and obtaining the shutter control signal of the shimmer charge coupling component CCD through a synchronous control circuit to control the pulse width and starting time of the 915nm semiconductor laser so as to match and synchronize the pulse width and the starting time with those of the shutter of the shimmer charge coupling component CCD. The method can be used for solving the red exposure problem of laser active illuminating light source and reduces the power consumption of the laser on the condition of guaranteeing the acting distance. The red exposure eliminating method provided by the invention has good practical value and application prospect in electro-optical countermeasure and laser active night vision.
Description
(1) technical field
The present invention be directed to the initiatively red method of exposing to the sun and eliminating of night vision device of hand-held semiconductor laser.The method belongs to technique of laser imaging field.
(2) background technology
The develop rapidly of Technology of Laser Active Illuminated Imaging development, especially laser technology, various new pattern laser active illumination imaging systems are constantly developed out.Near infrared semiconductor laser active illumination, has that monochromaticity is good, light beam concentrates, and volume is little, the life-span is long, electro-optical efficiency is high, easy care, disguised strong feature, in laser active illumination imaging systems, is widely used.Human eye has a provisioning response to near-infrared laser, and the people such as D.H.Sliney study and find that response can expand to 1.06um to human eye to near-infrared laser always, generally this phenomenon is called to near-infrared laser is red to expose to the sun.The red phenomenon of exposing to the sun is that the luminous mechanism by semiconductor laser determines.The red phenomenon of exposing to the sun of laser active illumination light source causes laser active illumination imaging systems easily to expose, and has larger limitation.
Conventional illumination semiconductor laser wavelength has 808nm, 880nm, 915nm etc., at running hours, all has the red phenomenon of exposing to the sun.At present, eliminate red method of exposing to the sun: select longer wavelength, as select the semiconductor laser of the long-wave bands such as 940nm, 980nm.But the responsiveness of the longer low-light charge coupled device ccd of wavelength is lower, thereby shorten detection range.In this case, if will guarantee long-range detection, need to increase the power of semiconductor laser.And hand-held semiconductor laser active night vision device has strict restriction to the volume of equipment, weight, power consumption etc.Therefore need to, in the situation that not increasing power consumption, should select the shorter semiconductor laser of wavelength as far as possible.
But the red phenomenon of exposing to the sun is the luminous mechanism by semiconductor laser to be determined, can not eliminate completely.Therefore accepting in distance range (beyond 30m), to eliminate red exposing to the sun be also to have very much Practical significance.
(3) summary of the invention
1, object: the present invention is directed to the problem that above-mentioned laser active illumination light source exists the red phenomenon of exposing to the sun, proposed the initiatively red removing method that exposes to the sun of night vision device of a kind of hand-held semiconductor laser.In the situation that guarantee effect distance is constant, solves the red problem of exposing to the sun of semiconductor laser active illumination light source, and can reduce accordingly the power consumption of laser instrument.
2, technical scheme: the present invention proposes the initiatively red removing method that exposes to the sun of night vision device of a kind of hand-held semiconductor laser.Because the shutter of low-light charge coupled device ccd is controlled by shutter control signal, shutter control signal changes by low-light charge coupled device ccd is inner and produces according to extraneous light intensity, pulse width and the opening time of therefore using the shutter control signal control 915nm semiconductor laser of low-light charge coupled device ccd, make it mate and synchronize with the shutter of low-light charge coupled device ccd.So just, can be the in the situation that of guarantee effect distance, the red corresponding power consumption that reduces laser instrument when problem of exposing to the sun that solves laser active illumination light source.
3, advantage and effect: advantage of the present invention is in the situation that guarantee that the peak power of laser active illumination light source is constant, reduce pulse width and the bright dipping time of laser active illumination light source, and make it with the shutter coupling of low-light charge coupled device ccd and synchronize, can guarantee detection range, reduce power consumption, red the exposing to the sun of elimination laser active illumination light source.
(4) accompanying drawing explanation
Fig. 1 is initiatively night vision device system chart of hand-held semiconductor laser.This system is mainly rushed body laser, Laser emission and receiving optics, low-light charge coupled device ccd, synchronization control circuit and display module etc. by half leader and is formed.Transmit and receive optical system separation, greatly reduce like this complicacy of Optical System Design.Lasing light emitter is to consist of semiconductor laser, output pulsed infrared laser; Synchronization control circuit obtains the shutter control signal of low-light charge coupled device ccd and controls semiconductor laser, output pulsed infrared laser; Low-light charge coupled device ccd obtains initiatively image at laser pulse high level and is shown by display module.
(5) embodiment
The present invention is the initiatively red removing method that exposes to the sun of night vision device of a kind of hand-held semiconductor laser, and specific implementation step is:
1, adopt 915nm semiconductor pulse laser lighting source.Laser instrument is exported uniform light spots, then is passed through optical transmitting system with certain angle of divergence illumination target through coupling fiber, beam shaping.
2, adopting the model of low-light charge coupled device ccd is WAT-902HB2S.The shutter of low-light charge coupled device ccd is controlled by shutter control signal, and shutter control signal is automatically according to extraneous light intensity, to change by low-light charge coupled device ccd is inner and produce.
3, adopt synchronization control circuit to control semiconductor pulse laser.Synchronization control circuit obtains pulse width and the opening time of the shutter control signal control 915nm semiconductor laser of low-light charge coupled device ccd, makes it mate and synchronize with the shutter of low-light charge coupled device ccd.
Just can be the guarantee effect distance in the situation that by above method, the red corresponding power consumption that reduces laser instrument when problem of exposing to the sun that solves laser active illumination light source.
Advantage of the present invention is in the situation that guarantee that the peak power of laser active illumination light source is constant, reduce the pulse width of laser active illumination light source, and make it with the shutter coupling of low-light charge coupled device ccd and synchronize, can guarantee detection range, reduce power consumption, red the exposing to the sun of elimination laser active illumination light source.
Claims (1)
1. the red removing method that exposes to the sun of semiconductor laser active night vision, is characterized in that: adopt 915nm semiconductor pulse laser active illumination light source; Adopting low-light Charge-Coupled Device Array number is the CCD of WAT-902HB2S; The shutter control signal that adopts synchronization control circuit to obtain low-light charge coupled device ccd is controlled pulse width and the opening time of 915nm semiconductor laser, makes it mate and synchronize with the shutter of low-light charge coupled device ccd; In the situation of the method guarantee effect distance, the red corresponding power consumption that reduces laser instrument when problem of exposing to the sun that solves laser active illumination light source.
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Families Citing this family (3)
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CN104735335A (en) * | 2015-04-13 | 2015-06-24 | 成都科美光电科技有限公司 | Novel night vision instrument |
CN104735333A (en) * | 2015-04-13 | 2015-06-24 | 成都科美光电科技有限公司 | Automatic light-filling-in night-vision device |
CN110189514B (en) * | 2019-04-18 | 2021-07-13 | 广东满天星云信息技术有限公司 | Infrared carrier wave transparent transmission type communication circuit and device thereof |
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