CN102749702A

CN102749702A - Red exposure eliminating method of hand-held semiconductor laser active night-vision device

Info

Publication number: CN102749702A
Application number: CN2012102244105A
Authority: CN
Inventors: 李丽; 吴磊; 李栋
Original assignee: Beihang University
Current assignee: Beihang University
Priority date: 2012-06-28
Filing date: 2012-06-28
Publication date: 2012-10-24
Anticipated expiration: 2032-06-28
Also published as: CN102749702B

Abstract

The invention provides a red exposure eliminating method of a hand-held semiconductor laser active night-vision device, which is suitable for semiconductor laser active night-vision devices and belongs to the technical field of laser night vision. The red exposure eliminating method provided by the invention mainly aims at the red exposure problem of near-infrared semiconductor laser night detection and is characterized by comprising the steps of: utilizing a 915nm semiconductor pulse laser active illumination light source; utilizing a CCD (Charge Coupled Device) in which the model number of a shimmer charge coupling component is WAT-902HB2S; and obtaining the shutter control signal of the shimmer charge coupling component CCD through a synchronous control circuit to control the pulse width and starting time of the 915nm semiconductor laser so as to match and synchronize the pulse width and the starting time with those of the shutter of the shimmer charge coupling component CCD. The method can be used for solving the red exposure problem of laser active illuminating light source and reduces the power consumption of the laser on the condition of guaranteeing the acting distance. The red exposure eliminating method provided by the invention has good practical value and application prospect in electro-optical countermeasure and laser active night vision.

Description

A kind of hand-held semiconductor laser is the red removing method that exposes to the sun of night vision device initiatively

(1) technical field

The present invention be directed to the initiatively red method of exposing to the sun and eliminating of night vision device of hand-held semiconductor laser.This method belongs to the technique of laser imaging field.

(2) background technology

Technology of Laser Active Illuminated Imaging constantly develops, the especially develop rapidly of laser technology, and various new pattern laser active illumination imaging systems constantly are developed out.The near infrared semiconductor laser initiatively throws light on, and has that monochromaticity is good, light beam concentrates, and volume is little, the life-span is long, electro-optical efficiency is high, easy care, disguised strong characteristics, in laser active illumination imaging systems, is widely used.Human eye has a provisioning response to near-infrared laser, and people such as D.H.Sliney discover that human eye can expand to 1.06um to near-infrared laser response always, generally calls this phenomenon that near-infrared laser is red to expose to the sun.The red phenomenon of exposing to the sun is that the luminous mechanism by semiconductor laser determines.The red phenomenon of exposing to the sun of laser active illumination light source causes laser active illumination imaging systems to expose easily, and bigger limitation is arranged.

Illumination semiconductor laser wavelength commonly used has 808nm, 880nm, 915nm etc., at running hours the red phenomenon of exposing to the sun is arranged all.At present, eliminate red method of exposing to the sun: select longer wavelength, as select the semiconductor laser of long-wave bands such as 940nm, 980nm for use.But the responsiveness of the long more low-light charge coupled device ccd of wavelength is low more, thereby shortens detection range.In this case, if will guarantee long-range detection, then need increase the power of semiconductor laser.And the hand-held semiconductor laser initiatively night vision device the volume of equipment, weight, power consumption etc. are all had strict restriction.Therefore need under the situation that does not increase power consumption, should select the short semiconductor laser of wavelength for use as far as possible.

But the red phenomenon of exposing to the sun is the luminous mechanism by semiconductor laser to be determined, can not eliminate fully.Therefore to eliminate red exposing to the sun also be that Practical significance is arranged very much accepting in the distance range (beyond 30m).

(3) summary of the invention

1, purpose: the present invention is directed to the problem that there is the red phenomenon of exposing to the sun in above-mentioned laser active illumination light source, proposed the initiatively red removing method that exposes to the sun of night vision device of a kind of hand-held semiconductor laser.Under the constant situation of guarantee effect distance, solve the initiatively red problem of exposing to the sun of lighting source of semiconductor laser, and can reduce the power consumption of laser instrument accordingly.

2, technical scheme: the present invention proposes the initiatively red removing method that exposes to the sun of night vision device of a kind of hand-held semiconductor laser.Because the shutter of low-light charge coupled device ccd is controlled by shutter control signal; Shutter control signal changes by the inner generation of low-light charge coupled device ccd according to extraneous light intensity; Therefore use the pulse width and the opening time of the shutter control signal control 915nm semiconductor laser of low-light charge coupled device ccd, make it with the shutter coupling of low-light charge coupled device ccd and synchronously.So just, can be under the situation of guarantee effect distance, the red corresponding power consumption that reduces laser instrument problem time of exposing to the sun that solves the laser active illumination light source.

3, advantage and effect: advantage of the present invention is under the constant situation of the peak power that guarantees the laser active illumination light source; Reduce the pulse width and the bright dipping time of laser active illumination light source; And make it with the shutter of low-light charge coupled device ccd coupling and synchronously, can guarantee detection range, reduce power consumption, eliminate red the exposing to the sun of laser active illumination light source.

(4) description of drawings

Fig. 1 is an initiatively night vision device system chart of hand-held semiconductor laser.This system mainly is made up of towards body laser, Laser emission and receiving optics, low-light charge coupled device ccd, synchronization control circuit and display module etc. half leader.Transmit and receive optical system and separate, greatly reduce the complicacy of design of Optical System like this.Lasing light emitter is to be made up of semiconductor laser, output pulsed infrared laser; Synchronization control circuit obtains the shutter control signal of low-light charge coupled device ccd and controls semiconductor laser, output pulsed infrared laser; The low-light charge coupled device ccd obtains initiatively at the laser pulse high level, and image is shown by display module.

(5) embodiment

The present invention is the initiatively red removing method that exposes to the sun of night vision device of a kind of hand-held semiconductor laser, and concrete performing step is:

1, adopts 915nm semiconductor pulse laser lighting source.Laser instrument passes through optical transmitting system with certain angle of divergence illumination target again through optical fiber coupling, beam shaping output uniform light spots.

2, adopting the model of low-light charge coupled device ccd is WAT-902HB2S.The shutter of low-light charge coupled device ccd is by shutter control signal control, and shutter control signal is to change by the low-light charge coupled device ccd is inner according to extraneous light intensity automatically to produce.

3, adopt synchronization control circuit control semiconductor pulse laser.Synchronization control circuit obtains the pulse width and the opening time of the shutter control signal control 915nm semiconductor laser of low-light charge coupled device ccd, makes it with the shutter coupling of low-light charge coupled device ccd and synchronously.

Just can be under the situation of guarantee effect distance through above method, the red corresponding power consumption that reduces laser instrument problem time of exposing to the sun that solves the laser active illumination light source.

Advantage of the present invention is under the constant situation of the peak power that guarantees the laser active illumination light source; Reduce the pulse width of laser active illumination light source; And make it with the shutter of low-light charge coupled device ccd coupling and synchronously, can guarantee detection range, reduce power consumption, eliminate red the exposing to the sun of laser active illumination light source.

Claims

1. the red removing method that exposes to the sun of semiconductor laser active night vision is characterized in that: adopt initiatively lighting source of 915nm semiconductor pulse laser; Adopting low-light charge-coupled image sensor model is the CCD of WAT-902HB2S; The shutter control signal that adopts synchronization control circuit to obtain the low-light charge coupled device ccd is controlled the pulse width and the opening time of 915nm semiconductor laser, makes it with the shutter coupling of low-light charge coupled device ccd and synchronously.Under the situation of this method guarantee effect distance, the red corresponding power consumption that reduces laser instrument problem time of exposing to the sun that solves the laser active illumination light source.

2. a kind of semiconductor laser as claimed in claim 1 is the red removing method that exposes to the sun of night vision initiatively, is characterised in that: adopt the 915nm impulse semiconductor laser to be the active lighting source.

3. a kind of semiconductor laser as claimed in claim 1 is the red removing method that exposes to the sun of night vision initiatively; Be characterised in that: adopt synchronization control circuit to obtain the trigger pip of low-light charge coupled device ccd shutter control signal, make it shutter synchronization with the low-light charge coupled device ccd as the 915nm semiconductor laser.

4. a kind of semiconductor laser as claimed in claim 1 is the red removing method that exposes to the sun of night vision initiatively; Be characterised in that: adopt synchronization control circuit to obtain the pulse width of the shutter width signal controlling 915nm semiconductor laser of low-light charge coupled device ccd, make it shutter coupling with the low-light charge coupled device ccd.