CN102739191B - Comprise the stack acoustic resonator in bridge portion - Google Patents
Comprise the stack acoustic resonator in bridge portion Download PDFInfo
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- CN102739191B CN102739191B CN201210093059.0A CN201210093059A CN102739191B CN 102739191 B CN102739191 B CN 102739191B CN 201210093059 A CN201210093059 A CN 201210093059A CN 102739191 B CN102739191 B CN 102739191B
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- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims description 47
- 238000012856 packing Methods 0.000 claims description 6
- 239000005385 borate glass Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- ZXNKRXWFQRLIQG-UHFFFAOYSA-N silicon(4+);tetraborate Chemical compound [Si+4].[Si+4].[Si+4].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-] ZXNKRXWFQRLIQG-UHFFFAOYSA-N 0.000 claims description 4
- 230000006872 improvement Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000010979 ruby Substances 0.000 description 2
- 229910001750 ruby Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
- H03H9/585—Stacked Crystal Filters [SCF]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/587—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/589—Acoustic mirrors
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present invention relates to the stack acoustic resonator comprising bridge portion.According to representative embodiment, bulk acoustic wave (BAW) resonator structure comprises: be arranged on the first electrode on substrate; The first piezoelectric layer is on the first electrode set; Be arranged on the second electrode on the first piezoelectric layer; The second piezoelectric layer is on the second electrode set; Be arranged on the third electrode on the second piezoelectric layer; And the bridge portion be arranged between the first electrode and third electrode.
Description
Technical field
The application relates to stack acoustic resonator.
The application relates to the U.S. Patent application No.13/036 being entitled as " CoupledResonatorFilterComprisingBridge " that DariuszBurak submitted on February 28th, 2011, the continuation-in-part application of 489.The application compiles the 120th article according to United States code the 35th and requires U.S. Patent application No.13/036, the priority of 489, and the open text of this patent application by reference entirety is incorporated in this specification.
Background technology
Transducer converts the electrical signal to mechanical signal or vibration usually, and/or converts mechanical signal or vibration to the signal of telecommunication.Particularly, acoustic transducer converts the electrical signal to acoustic signal (sound wave) in a transmitting mode, and/or converts the sound wave of reception to the signal of telecommunication in a receiving mode.Acoustic transducer generally includes acoustic resonator, such as film bulk acoustic resonator (FBAR), surface acoustic wave (SAW) resonator or bulk acoustic wave (BAW) resonator, and acoustic transducer can be used in a variety of electronic application, such as mobile phone, personal digital assistant (PDA), electronic game station, notebook computer and other portable communication devices.Such as, FBAR may be used for electrical filter and voltage transformer.Usually, acoustic resonator has the piezoelectric material layer be positioned between two conductive plates (electrode), and this piezoelectric material layer can be formed on film.Particularly, FBAR equipment produces longitudinal sound wave and side direction (or laterally) sound wave and high-order harmonic wave mixed product when the excitation of the time-varying electric field applied.Lateral mode and high-order harmonic wave mixed product have adverse effect for functional.
Stack body acoustic resonator (SBAR) (also referred to as binary acoustic resonator (DBAR)) at single stacking two piezoelectric material layers comprised between three electrodes, and forms single resonant cavity.That is, the first piezoelectric material layer is formed between first (end) electrode and second (centre) electrode, and the second piezoelectric material layer is formed between second (target) and the 3rd (top) electrode.Usually, stack body acoustic resonator equipment can reduce about half the area of monolithic entity acoustic resonator equipment.
In FBAR equipment, realized the mould restriction of the generation reduced in the acoustics loss of boundary and the active area (region of top electrode, piezoelectric layer and hearth electrode overlap) of FBAR by multiple method.Especially, the one side or the multi-lateral along FBAR arranges framework.Framework produces acoustic impedance mismatch, and acoustic impedance mismatch carrys out Loss reducing by active area desired pattern being reflected back into resonator, therefore improves the restriction to desired pattern in the active area of FBAR.
Although Integration Framework produces the mould restriction and quality (Q) factor along with improvement FBAR that improve, the frame element that directly application is known does not produce remarkable improvement in the mould restriction of known DBAR and Q.
Therefore, it is desirable that at least overcome the DBAR of above-mentioned known disadvantage.
Summary of the invention
According to representative embodiment, a kind of bulk acoustic wave (BAW) resonator structure comprises: be arranged on the first electrode on substrate; The first piezoelectric layer is on the first electrode set; Be arranged on the second electrode on the first piezoelectric layer; The second piezoelectric layer is on the second electrode set; Be arranged on the third electrode on the second piezoelectric layer; Be arranged on the bridge portion between the first electrode and third electrode.
According to another representative embodiment, a kind of bulk acoustic wave (BAW) resonator structure comprises: be arranged on the first electrode on substrate; The first piezoelectric layer is on the first electrode set; Be arranged on the second electrode on the first piezoelectric layer; The second piezoelectric layer is on the second electrode set; Be arranged on the third electrode on the second piezoelectric layer; Be arranged on the bridge portion between the first electrode and third electrode; Be arranged on the internal protrusion region on third electrode.
Accompanying drawing explanation
When reading by reference to the accompanying drawings, exemplary embodiment can be understood best from detailed description below.It is emphasized that various feature is not necessarily drawn to scale.In fact, in order to the clearness discussed, may at random increase or reduce size.In applicable and attainable situation, similar Reference numeral represents similar element.
Figure 1A illustrates the vertical view of the DBAR according to representative embodiment.
Figure 1B is the sectional view of the DBAR along the Figure 1A acquired by line 1B-1B.
Fig. 1 C is the sectional view of the DBAR according to representative embodiment.
Fig. 1 D is the sectional view of the DBAR according to representative embodiment.
Fig. 1 E is the sectional view of the DBAR according to representative embodiment.
Fig. 1 F represents known DBAR and the Q factor (Q according to the strange mould of the DBAR of representative embodiment
o) curve chart.
Fig. 2 A-2B is the sectional view separately with the DBAR in the bridge portion be arranged in the simple layer of DBAR according to representative embodiment.
Fig. 3 A-3B is the sectional view separately with the DBAR in the bridge portion be arranged in the simple layer of DBAR according to representative embodiment.
Fig. 4 A-4B is the sectional view separately with the DBAR in the bridge portion be arranged in the simple layer of DBAR according to representative embodiment.
Fig. 5 A-5B is the sectional view separately with the DBAR in the bridge portion be arranged in the simple layer of DBAR according to representative embodiment.
Fig. 6 A-6D is the sectional view with the DBAR in the bridge portion be arranged in two layers of DBAR according to representative embodiment.
Fig. 7 A-7D is the sectional view with the DBAR in the bridge portion be arranged in two layers of DBAR according to representative embodiment.
Fig. 8 A-8D is the sectional view with the DBAR in the bridge portion be arranged in two layers of DBAR according to representative embodiment.
Fig. 9 A-9D is the sectional view with the DBAR in the bridge portion be arranged in two layers of DBAR according to representative embodiment.
Figure 10 A-10D is the sectional view with the DBAR in the bridge portion be arranged in two layers of DBAR according to representative embodiment.
Figure 11 A-11B is the sectional view with the DBAR in the bridge portion be arranged in two layers of DBAR according to representative embodiment.
Figure 11 C represents known DBAR and the Q factor (Q according to the strange mould of the DBAR of representative embodiment
o) curve chart.
Embodiment
Term definition
It should be understood that term used herein is only to describe specific embodiment, is not to limit.The term defined is to generally understanding in technical field of the present invention and the technology of the restriction term accepted and Scientific Meaning supplementary.
As used in the specification and in the claims, unless clearly illustrated that in context outside other situations, the term not indicating number comprises odd number and plural reference.Therefore, such as, " device " comprises a device and multiple device.
As used in the specification and in the claims, except general implication, term " substantially " and " substantially " represent in acceptable limit or degree.Such as, " substantially offset " means that those skilled in the art will think that this counteracting is acceptable.
As used in the specification and in the claims, except the meaning that it is general, term " approximately " means within those of ordinary skill in the art's acceptable limit or amount.Such as, " approximately identical " means that those skilled in the art will think that the project of comparing is identical.
Describe in detail
In the following detailed description, in order to the object explained instead of restriction object and give specific details, to provide the thorough understanding to exemplary embodiment according to the present invention.But, for benefiting from those of ordinary skill in the art of the present disclosure, according to the present invention but other embodiments departing from specific detail disclosed herein still within the scope of the claims.In addition, the description for well-known equipment and method can be omitted, the description indigestibility to exemplary embodiment can not be made.Such method and apparatus is obviously in the scope of this instruction.
Generally, the various elements shown in accompanying drawing and accompanying drawing should be understood do not draw in proportion.In addition, as shown in the drawings, relative terms (such as " top ", " below ", " top ", " end ", "up" and "down") is for describing various element relation each other.The difference location that these terms can comprise device and/or element except the location shown in accompanying drawing should be understood.Such as, if relative to the view upset in accompanying drawing, then such as, being described as now will below this another element at the element of another element " top ".
Relate generally to of the present invention comprises the BAW resonator structure of DBAR.In some applications, BAW resonator structure provides the filter (such as, ladder-type filter) based on DBAR.Some details of DBAR, BAW resonance filter and material and their manufacture method can be found: the United States Patent (USP) 6,107,721 licensing to Lakin in one or more in following total United States Patent (USP) and patent application; License to the United States Patent (USP) 5,587,620,5,873,153,6,507,983 and 7,629,865 of the people such as Ruby; License to the United States Patent (USP) 7,280,007 of the people such as Feng; The U.S. Patent Application Publication 20070205850 of the people such as Jamneala; License to the United States Patent (USP) 7,388,454 of the people such as Ruby; The U.S. Patent Application Publication 20100327697 of the people such as Choy; And the U.S. Patent Application Publication 20100327994 of the people such as Choy.The open text of these patents and patent application is incorporated in this specification by reference clearly.It is emphasized that the assembly, material and the manufacture method that describe in these patents and patent application are representational, other manufacture methods in the ken of those of ordinary skill in the art and material can be considered.
Figure 1A illustrates the vertical view of the DBAR100 according to representative embodiment.DBAR100 comprises top electrode 101 (being called third electrode 101 hereinafter), and top electrode 101 comprises five (5) individual sides, and connection side 102 is configured to provide and 103 is electrically connected with interconnecting.Interconnection 103 provides the signal of telecommunication to top electrode 101, to inspire the sound wave of expectation in the piezoelectric layer (not shown in figure 1) of DBAR100.Top electrode 101 comprises bridge portion 104 (being called the second bridge portion 104 hereinafter) (in the vertical view of Figure 1A, can't see the bridge portion in connection side 102) that be arranged on all sides.As described more comprehensively afterwards, the periphery around DBAR100 provides bridge portion 104, contributes to improving at expected frequency range (such as, the band of DBAR leads to) Nei Qimo (Q
o) insertion loss and Q factor.
Figure 1B illustrates according to the sectional view of representative embodiment along the DBAR100 acquired by line 1B-1B.DBAR100 comprises setting multiple layers on the substrate 105, and substrate 105 has chamber 106.It is only exemplary for comprising chamber 106 for acoustic reflection at DBAR100.It is emphasized that, except chamber 106, can arrange known acoustic reflection device (such as, Bragg mirror (not shown)) to provide acoustics to isolate in substrate 105, this known acoustic reflection device comprises high acoustic impedance layer alternately and low acoustic impedance layer.
First electrode 107 is arranged on above substrate 105, and is partly arranged on top, chamber 106 (or Bragg mirror).As shown in the figure, planarization layer 107 ' is arranged on types of flexure.In the exemplary embodiment, comprise can not etching silicon borate glass (NEBSG) for planarization layer 107 '.First piezoelectric layer 108 is arranged on above the first electrode 107.Planarization layer 109 is arranged on above the first piezoelectric layer 108, and not overlapping with chamber 106 substantially.In the exemplary embodiment, comprise can not etching silicon borate glass (NEBSG) for planarization layer 109.As one of ordinary skill will be understood, the structure provided by the first electrode 107, first piezoelectric layer 108 and the second electrode 111 is bulk acoustic wave (BAW) resonator, in the present example embodiment, this bulk acoustic wave resonator comprises a BAW resonator of DBAR100.When being arranged on above chamber by BAW resonator, this resonator is exactly so-called FBAR; When BAW resonator being arranged on acoustic reflection device (such as, Bragg mirror) top, this resonator is exactly so-called solid mount type resonator (SMR).The present invention can consider to use FBAR or SMR in various application (comprising filter (such as, comprising the ladder-type filter of multiple BAW resonator)).
First bridge portion 110 is arranged on the intersection of the second electrode 111 and planarization layer 109, and arranges (that is, the periphery forming DBAR100) along all sides of DBAR100.In the exemplary embodiment, the first and second bridge portions 110,104 (and hereinafter in conjunction with other bridge portions described by representative embodiment) have trapezoidal sectional shape.It is emphasized that the trapezoidal sectional shape in the bridge portion of representative embodiment is only exemplary, bridge portion is not limited to trapezoidal sectional shape.Such as, the cross sectional shape in the bridge portion of representative embodiment can be square or rectangle or belong to irregularly shaped." inclination " wall in the first and second bridge portions 110,104 (and hereinafter in conjunction with other bridge portions described by representative embodiment) is of value to the quality (such as, the quality of crystalline piezoelectric layer) of the layer of the upper growth in the first and second bridge portions 110,104 (and hereinafter in conjunction with other bridge portions described by representative embodiment).Especially, first bridge portion 110 and the second bridge portion 104 (and hereinafter in conjunction with other bridge portions described by representative embodiment) there is no need be identical shape (such as, one can have trapezoidal sectional shape, and one can have rectangular cross sectional shape).The typical sizes in the first and second bridge portions 110,104 (and hereinafter in conjunction with other bridge portions described by representative embodiment) is width about 2.0 μm to about 10.0 μm (the x dimensions of the coordinate system shown in Figure 1B) and highly about 300A to about 1500A (the y dimension of the coordinate system shown in Figure 1B).In certain embodiments, the first and second bridge portions 110,104 (and hereinafter in conjunction with other bridge portions described by representative embodiment) extend (being illustrated as the lap 113 in Figure 1B) above chamber 106.Lap 113 (also referred to as decoupling region) has the width (x dimension) of about 0.0 μm (that is, not having overlapping with chamber 106) to about 5.0 μm.Especially, the first bridge portion 110 and the second bridge portion 104 (and hereinafter in conjunction with other bridge portions described by representative embodiment) there is no need is identical size or is positioned on identical relative position.Such as, the first and second bridge portions 110,104 and the lap 113 in chamber 106 are shown as all bridge portions 104,110 is in fig. ib identical; But this is dispensable, because different bridge portion 104,110 overlappingly with chamber 106 can reach the degree being greater than or less than other bridge portions 104,110.
Substantially, first and second bridge portions 110,104 (and hereinafter in conjunction with other bridge portions described by representative embodiment) need enough wide, to guarantee the suitable delay of the boundary evanescent wave in active area 114 (in this article also referred to as DBAR region) and decoupling region 113, when there is propagating mode (propagatingmode) under the frequency run, phenomenon that pattern is penetrated in place (fieldregion) 115 reduces to minimum.On the other hand, if the first and second bridge portions 110,104 are too wide, then integrity problem there will be and also limit similar DBAR (not shown) is placed near (therefore unnecessarily increasing the gross area of chip).Thus, the optimized width in the first and second bridge portions 110,104 is determined according to test.
In addition, the first and second bridge portions 110,104 (and hereinafter in conjunction with other bridge portions described by representative embodiment) and with the width of the lap 113 in chamber 106 and position through selecting, strengthen with the Q improving strange resonant mode.Usually, the lap 113 in the chamber 106 of each bridge portion 104,110 and DBAR100 is larger, then improve Q
olarger, the improvement realized after initial increasing is quite few.Q
oimprovement must with dynamo-electric effective coupling coefficient (kt
2) reduction suitable, this effective coupling coefficient increases along with the lap 113 in the first and second bridge portions 110,104 and chamber 106 and reduces.Kt
2reduce the insertion loss (S causing the filter comprising DBAR
21) reduce.Thus, the lap 113 in the first and second bridge portions 110,104 and chamber 106 is generally optimized according to test.
First and second bridge portions 110,104 (and hereinafter in conjunction with other bridge portions described by representative embodiment) have the height (the y dimension in the coordinate system of Figure 1B) of about 300A to 1500A.Especially, determined the lower limit of height by the limit of the process of removing expendable material when formation first and second bridge portion 110,104 (and hereinafter in conjunction with other bridge portions described by representative embodiment), determined the upper limit of height by the quality of the subsequent treatment of possible nonplanar structure by the quality of the layer of growth upper in the first and second bridge portions 110,104 (and hereinafter in conjunction with other bridge portions described by representative embodiment).
Second piezoelectric layer 112 is arranged on above the second electrode 111.Third electrode 101 is arranged on above the second piezoelectric layer 112.Second bridge portion 104 is arranged along all sides (that is, peripherally) of DBAR100.As one of ordinary skill will be understood, the structure provided by the second electrode 111, second piezoelectric layer 112 and third electrode 101 is (BAW) resonator, in the present example embodiment, this resonator comprises the 2nd BAW resonator of DBAR100.As mentioned above, when being arranged on above chamber by BAW resonator, this resonator is exactly so-called FBAR; When BAW resonator being arranged on acoustic reflection device (such as, Bragg mirror) top, this resonator is exactly so-called solid mount type resonator (SMR).The present invention can consider to use FABR or SMR to form DBAR.DBAR can consider for various application (comprising filter (such as, comprising the ladder-type filter of multiple BAW resonator)).
Exemplarily, the first electrode 107, second electrode 111 and third electrode 101 have the tungsten (W) of about 3000A to about 10000A thickness.Other materials may be used for the first electrode 107, second electrode 111 and third electrode 101, and these materials include but not limited to molybdenum (Mo) or bimetallic material.Exemplarily, the first piezoelectric layer 108 and the second piezoelectric layer 112 have the aluminium nitride (AlN) of about 5000A to about 15000A thickness.Other materials may be used for the first piezoelectric layer 108 and the second piezoelectric layer 112, and these materials include but not limited to ZnO.
By carrying out patterning to the expendable material on the first piezoelectric layer 108 and the second piezoelectric layer 112 and forming illustrated layer up to be formed the first and second bridge portions 110,104.After the layer forming DBAR100 as required, remove expendable material, leave the first and second bridge portions 110,104 of " being full of " air.In the exemplary embodiment, for the formation of expendable material and the expendable material identical (such as, PSG) for the formation of chamber 106 in the first and second bridge portions 110,104.
In the exemplary embodiment, the first bridge portion 110 and the second bridge portion 104 limit periphery along the active area 114 of DBAR100.Therefore active area 114 comprises the part of a BAW resonator and the 2nd BAW resonator, and the periphery that a BAW resonator and the 2nd BAW resonator are arranged on to be provided above chamber 106 and by the first bridge portion 110 and the second bridge portion 104 carrys out gauge (bound).As one of ordinary skill will be understood, along above-below direction (chamber 106), the border of the active area of DBAR100 is formed by the acoustic impedance discontinuity that causes owing to there is air around the periphery of DBAR100 by the acoustic impedance discontinuity produced by the first and second bridge portions 110,104 at least in part.Therefore, in the active area of DBAR100, resonant cavity is advantageously provided.In certain embodiments, the same with chamber 106, the first bridge portion 110 and the second bridge portion 104 are unfilled (that is, comprising air).In other embodiments described more comprehensively hereinafter, the first bridge portion 110 or the second bridge portion 104 or both be filled with material, to provide the acoustic impedance discontinuity of expectation.
It should be noted that, the first bridge portion 110 or the second bridge portion 104 or both there is no need to extend along whole edges of DBAR100, so there is no the necessary periphery along DBAR100 and extend.Such as, the first bridge portion 110 or the second bridge portion 104 or both can be arranged on four " sides " of the DBAR100 of five sides shown in Figure 1A.In certain embodiments, the first bridge portion 110 is arranged along four sides identical with the second bridge portion 104 of DBAR100.In other embodiments, first bridge portion 110 along DBAR100 four sides (such as, all sides except except connection side 102), second bridge portion 104 is arranged (such as, the second bridge portion 104 is arranged along a02) along four sides (but different from DBAR100 four sides) of DBAR100.
The acoustic impedance mismatch provided by the first bridge portion 110 and the second bridge portion 104 causes at boundary sound wave reflection, and sound wave can be transferred propagation and left active area and disappear and cause energy loss.First bridge portion 110 and the second bridge portion 104 for interested pattern being limited in the active area 114 of DBAR100, and reduce the energy loss in DBAR100.Reduce the Q-factor (Q of such loss for increasing pattern interested in DBAR100
o).In the filter application of DBAR100, owing to reducing energy loss, allly advantageously improve insertion loss (S
21).
In the representative embodiment in conjunction with also description shown in Figure 1A, 1B, the first and second bridge portions 110,104 are unfilled (that is, comprising air as acoustic medium).Fig. 1 C illustrates the sectional view of DBAR100, and wherein two bridge portions are filled with material, carrys out Loss reducing to provide acoustic impedance discontinuity.In certain embodiments, the first bridge portion 110 ' and the second bridge portion 104 ' are filled with NEBSG, CDO, carborundum (SiC) or can not removed dielectric substances that other are applicable to when removing the expendable material arranged in chamber 106.By forming NEBSG or other packing materials by known method above the first piezoelectric layer 108 and above the second piezoelectric layer 112 and each layer forming DBAR100 up manufactures the first and second bridge portions 110 ', 104 '.When forming chamber 106 by removal expendable material, the first bridge portion 110 ' and the second bridge portion 104 ' keep being filled with selected material.
Fig. 1 D illustrates the sectional view of DBAR100, and wherein the second bridge portion 104 ' is filled with material, and to provide acoustic impedance discontinuity to carry out Loss reducing, and the first bridge portion 110 is filled with air.By carrying out patterning to manufacture the DBAR100 of this modification to the material (such as, NEBSG) on the second piezoelectric layer 112, this material can not be removed before formation third electrode 101.By described above, expendable material on first electrode 107 carried out to patterning and removes expendable material, forming the first bridge portion 110.
Fig. 1 E illustrates the sectional view of DBAR100, and wherein the second bridge portion 104 is filled with air, and the first bridge portion 110 ' is filled with material, carrys out Loss reducing to provide acoustic impedance discontinuity.By carrying out patterning to manufacture the DBAR100 of this modification to the material (such as, NEBSG) on the first piezoelectric layer 108, this material can not be removed before formation second electrode 111.By described above, expendable material on first piezoelectric layer 108 carried out to patterning and removes expendable material, forming the second bridge portion 104.
Fig. 1 F illustrates the strange mould Q (Q of the DBAR100 of the representative embodiment shown in Figure 1B
o) the strange mould Q (Q of (relative to frequency) and known DBAR
o) simulation contrast.As shown in Figure 1B, the first and second bridge portions 110,104 are removed.In order to the improvement in the pattern restriction in the active area 114 of DBAR100 is described, provide the first and second bridge portions 110 and 104 with about 5 μm of width (x dimension), 2000A height and the lap 113 of 2.0 μm.Curve 116 illustrates the Q of the pattern in known DBAR (not having bridge portion)
o, curve 117 illustrates the Q of the pattern in the DBAR100 of removal first and second bridge portion (110,104)
o.Compared with the known DBAR not comprising bridge portion, (such as, according to the frequency run, 0.95GHz) expects Q
oimprove about 200%.
Comprise the embodiment in single bridge portion
In current described embodiment, in exemplary DBAR, provide single bridge portion.Single bridge portion is arranged on simple layer in each example, and forms the periphery around the active area of DBAR.By bridge portion is placed on below different layers, can study various embodiment, to test the degree of coupling of the pattern in active area (DBAR region) and the pattern in place.Bridge portion makes to have relative large propagation constant (k substantially
r) pattern and place in pattern decoupling.As described below, some embodiment comprises " filling " bridge portion, and some embodiment comprises " unfilled " bridge portion.A lot of details of the present embodiment is common with the details described in representative embodiment of composition graphs 1A-1F above.To comprise single bridge portion embodiment description in generally will no longer repeat common details.
Fig. 2 A-2B illustrates the sectional view of the DBAR200 according to representative embodiment.In the first piezoelectric layer 108, bridge portion 201 is set.Bridge portion 201 is unfilled (that is, being filled with air).Bridge portion 201 is arranged to the periphery of the active area 114 around DBAR200, and promote the pattern in the active area 114 of restriction DBAR200, the bridge portion 201 with about 5.0 μm of width (x dimension), 500A height and the lap 113 of overlapping with chamber 106 2.0 μm is provided.Compared with the known DBAR not comprising bridge portion, (according to the frequency run, such as, under 0.95GHz) expection Q
oimprove about 100%.
Fig. 2 B illustrates the bridge portion 202 be arranged in first piezoelectric layer 108 of DBAR200.There is material (such as, NEBSG or above-mentioned other materials) in bridge portion 202 " filling ", to provide acoustic impedance discontinuity.Bridge portion 202 is arranged to the periphery of the active area 114 around DBAR200, and promotes the pattern in the active area 114 of restriction DBAR200.Use bridge portion 202, expection has the Q be similar to for desired by bridge portion 201
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Fig. 3 A-3B illustrates the sectional view of the DBAR300 according to representative embodiment.DBAR300 comprises setting multiple layers on the substrate 105, and substrate 105 has chamber 106.A lot of aspect and the above-mentioned DBAR100,200 of DBAR300 are common, and will no longer repeat, to avoid making the description indigestibility to current described representative embodiment.
Fig. 3 A illustrates the bridge portion 301 be arranged in the second electrode 111 and planarization layer 109.Bridge portion 301 is unfilled (that is, being filled with air).Bridge portion 301 is arranged to the periphery of the active area 114 along DBAR300, and promotes the pattern in the active area 114 of restriction DBAR300.In order to the improvement in the pattern restriction in the active area 114 of DBAR300 is described, provide the bridge portion 301 with about 5.0 μm of width (x dimension), 500A height and the lap 113 of overlapping with chamber 106 2.0 μm.Compared with the known DBAR not comprising bridge portion, (according to the frequency run, such as, under 0.95GHz) expection Q
oimprove about 100%.
Fig. 3 B illustrates the bridge portion 302 be arranged in the second electrode 111.There is material (such as, NEBSG or above-mentioned other materials) in bridge portion 302 " filling ", to provide acoustic impedance discontinuity.Bridge portion 302 is arranged to the periphery of the active area 114 along DBAR300, and promotes the pattern in the active area 114 of restriction DBAR300.For having same widths with bridge portion 301, highly and bridge portion 302 that the is identical and lap 113 in chamber 106, use bridge portion 302, expection has the Q be similar to for desired by bridge portion 301
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Fig. 4 A-4B illustrates the sectional view of the DBAR400 according to representative embodiment.DBAR400 comprises setting multiple layers on the substrate 105, and substrate 105 has chamber 106.A lot of aspect of DBAR400 and DBAR100-300 are common, and will no longer repeat, to avoid making the description to current described representative embodiment not easily understand.
Fig. 4 A illustrates the bridge portion 401 be arranged in the second piezoelectric layer 112.Bridge portion 401 is unfilled (that is, being filled with air).Bridge portion 401 is arranged to the periphery of the active area 114 around DBAR400, and promotes the pattern in the active area of restriction DBAR400.In order to the improvement in the pattern restriction in the active area 114 of DBAR400 is described, provide the bridge portion 401 with about 5.0 μm of width (x dimension), 500A height and the lap 113 of overlapping with chamber 106 2.0 μm.Compared with the known DBAR not comprising bridge portion, (according to the frequency run, such as, under 0.95GHz) expection Q
oimprove about 100%.
Fig. 4 B illustrates the bridge portion 402 be arranged in the second piezoelectric layer 112.There is material (such as, NEBSG or above-mentioned other materials) in bridge portion 402 " filling ", to provide acoustic impedance discontinuity.Bridge portion 402 is arranged to the periphery of the active area 114 around DBAR400, and promotes the pattern in the active area 114 of restriction DBAR400.For having same widths with bridge portion 401, highly and bridge portion 402 that the is identical and lap 113 in chamber 106, use bridge portion 402, expection has the Q be similar to for desired by bridge portion 401
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Fig. 5 A-5B illustrates the sectional view of the DBAR500 according to representative embodiment.DBAR500 comprises setting multiple layers on the substrate 105, and substrate 105 has chamber 106.A lot of aspect of DBAR500 and DBAR100-400 are common, and will no longer repeat, to avoid making the description indigestibility to current described representative embodiment.
Fig. 5 A illustrates the bridge portion 501 be arranged in third electrode 101.Bridge portion 501 is unfilled (that is, being filled with air).Bridge portion 501 is arranged to the periphery of the active area 114 around DBAR500, and promotes the pattern in the active area 114 of restriction DBAR500.In order to the improvement in the pattern restriction in the active area 114 of DBAR500 is described, provide the bridge portion 501 with about 5.0 μm of width (x dimension), 500A height and the lap 113 of overlapping with chamber 106 2.0 μm.Compared with the known DBAR not comprising bridge portion, (according to the frequency run, such as, under 0.95GHz) expection Q
oimprove about 100%.
Fig. 5 B illustrates the bridge portion 502 be arranged in third electrode 101.There is material (such as, NEBSG or above-mentioned other materials) in bridge portion 502 " filling ", to provide acoustic impedance discontinuity.Bridge portion 502 is arranged to the periphery of the active area 114 around DBAR500, and promotes the pattern in the active area 114 of restriction DBAR500.For having same widths with bridge portion 501, highly and bridge portion 502 that the is identical and lap 113 in chamber 106, use bridge portion 502, expection has the Q be similar to for desired by bridge portion 501
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Comprise the embodiment in two bridge portions
In current described embodiment, in exemplary DBAR, provide two bridge portions.In each example, a bridge portion is arranged in a layer of DBAR, and the second bridge portion is arranged in another layer of DBAR.Although bridge portion shape is not circular but is concentric substantially, and bridge portion is arranged to the periphery around the active area surrounding DBAR.By below the layer that bridge portion is placed on various combination, can study various embodiment, to test the degree of coupling of the pattern in active area 114 (DBAR region) and the pattern in place 115.Bridge portion makes to have relative large propagation constant (k substantially
r) pattern and place 115 in pattern decoupling.As described below, some embodiment comprises " filling " bridge portion, and some embodiment comprises " unfilled " bridge portion.
Fig. 6 A-6D illustrates the sectional view of the DBAR600 according to representative embodiment.DBAR600 comprises setting multiple layers on the substrate 105, and substrate 105 has chamber 106.A lot of aspect of DBAR600 and DBAR100-500 are common, and will no longer repeat, to avoid making the description indigestibility to current described representative embodiment.
Fig. 6 A illustrates the first bridge portion 601 be arranged in the first piezoelectric layer 108.First bridge portion 601 is unfilled (that is, being filled with air).Second bridge portion 602 is arranged in third electrode 101.Second bridge portion 602 is unfilled (that is, being filled with air).First and second bridge portions 601,602 are arranged to the periphery of the active area 114 along DBAR600, and promote the pattern in the active area 114 of restriction DBAR600.In order to the improvement in the pattern restriction in the active area of DBAR600 is described, provide the first and second bridge portions 601,602 separately with about 5.0 μm of width (x dimension), 500A height and the lap 113 of overlapping with chamber 106 2.0 μm.Such as, compared with the known DBAR not having bridge portion (according to the frequency run, under 0.95GHz), by using the first and second bridge portions 601,602 of representative embodiment, owing to increasing restriction to strange mould in DBAR600, so the Q of expection DBAR600
oimprove about 200%.
Fig. 6 B illustrates the first bridge portion 603 be arranged in the first piezoelectric layer 108.(such as, being filled with NEBSG) is filled in first bridge portion 603.Second bridge portion 604 is arranged in third electrode 101.Second bridge portion 604 fills.First and second bridge portions 603,604 are arranged to the periphery of the active area around DBAR600, and promote the pattern in the active area of restriction DBAR600.For with the first and second bridge portions 601,602, there is same widths, highly and the first and second bridge portions 603,604 that the are identical and lap 113 in chamber 106, use the first and second bridge portions 603,604, expection has the Q be similar to for desired by the first and second bridge portions 601,602
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Fig. 6 C illustrates the first bridge portion 601 be arranged in the first piezoelectric layer 108.First bridge portion 601 is unfilled (that is, being filled with air).Second bridge portion 604 is arranged in third electrode 101.Second bridge portion 604 fills.First and second bridge portions 601,604 are arranged to the periphery of the active area 114 around DBAR600, and promote the pattern in the active area 114 of restriction DBAR600.For with the first and second bridge portions 601,602, there is same widths, highly and the first and second bridge portions 601,604 that the are identical and lap 113 in chamber 106, use the first and second bridge portions 601,604, expection has the Q be similar to for desired by the first and second bridge portions 601,602
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Fig. 6 D illustrates the first bridge portion 603 be arranged in the first piezoelectric layer 108.First bridge portion 603 fills.Second bridge portion 602 is arranged in third electrode 101.Second bridge portion 602 is unfilled (that is, being filled with air).First and second bridge portions 603,602 are arranged to the periphery of the active area 114 around DBAR600, and promote the pattern in the active area 114 of restriction DBAR600.For with the first and second bridge portions 601,602, there is same widths, highly and the first and second bridge portions 603,602 that the are identical and lap 113 in chamber 106, use the first and second bridge portions 603,602, expection has the Q be similar to for desired by the first and second bridge portions 601,602
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Fig. 7 A-7D illustrates the sectional view of the DBAR700 according to representative embodiment.DBAR700 comprises setting multiple layers on the substrate 105, and substrate 105 has chamber 106.A lot of aspect of DBAR700 and DBAR100-600 are common, and will no longer repeat, to avoid making the description indigestibility to current described representative embodiment.
Fig. 7 A illustrates the first bridge portion 701 be arranged in the first piezoelectric layer 108.First bridge portion 701 is unfilled (that is, being filled with air).Second bridge portion 702 is arranged in the second electrode 111, and partly extends in planarization layer 109.Second bridge portion 702 is unfilled (that is, being filled with air).First and second bridge portions 701,702 are arranged to the periphery of the active area 114 along DBAR700, and promote the pattern in the active area 114 of restriction DBAR700.In order to the improvement in the pattern restriction in the active area of DBAR700 is described, provide the first and second bridge portions 701,702 separately with about 5.0 μm of width (x dimension), 500A height and the lap 113 of overlapping with chamber 106 2.0 μm.Such as, compared with the known DBAR not having bridge portion (according to the frequency run, under 0.95GHz), by using the first and second bridge portions 701,702 of representative embodiment, owing to increasing restriction to strange mould in DBAR700, so the Q of expection DBAR700
oimprove about 200%.
Fig. 7 B illustrates the first bridge portion 703 be arranged in the first piezoelectric layer 108.First bridge portion 703 fills.Second bridge portion 704 is arranged in the second electrode 111, and partly extends in planarization layer 109.Second bridge portion 704 fills.First and second bridge portions 703,704 are arranged to the periphery of the active area 114 along DBAR700, and promote the pattern in the active area 114 of restriction DBAR700.For with the first and second bridge portions 701,702, there is same widths, highly and the first and second bridge portions 703,704 that the are identical and lap in chamber 106, use the first and second bridge portions 703,704, expection has the Q be similar to for desired by the first and second bridge portions 701,702
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Fig. 7 C illustrates the first bridge portion 701 be arranged in the first piezoelectric layer 108.First bridge portion 701 is unfilled (that is, being filled with air).Second bridge portion 704 is arranged in the second electrode 111, and partly extends in planarization layer 109.Second bridge portion 704 fills.First and second bridge portions 701,704 are arranged to the periphery of the active area along DBAR700, and promote the pattern in the active area of restriction DBAR700.For with the first and second bridge portions 701,702, there is same widths, highly and the first and second bridge portions 701,704 that the are identical and lap in chamber 106, use the first and second bridge portions 701,704, expection has the Q be similar to for desired by the first and second bridge portions 701,702
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Fig. 7 D illustrates the first bridge portion 703 be arranged in the first piezoelectric layer 108.First bridge portion 703 fills.Second bridge portion 702 is arranged in the second electrode 111, and partly extends in planarization layer 109.Second bridge portion 702 is unfilled (that is, being filled with air).First and second bridge portions 703,702 are arranged to the periphery of the active area around DBAR700, and promote the pattern in the active area 114 of restriction DBAR700.For with the first and second bridge portions 701,702, there is same widths, highly and the first and second bridge portions 703,702 that the are identical and lap in chamber 106, use the first and second bridge portions 703,702, expection has the Q be similar to for desired by the first and second bridge portions 701,702
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Fig. 8 A-8D illustrates the sectional view of the DBAR800 according to representative embodiment.DBAR800 comprises setting multiple layers on the substrate 105, and substrate 105 has chamber 108.A lot of aspect of DBAR800 and DBAR100-700 are common, and will no longer repeat, to avoid making the description indigestibility to current described representative embodiment.
Fig. 8 A illustrates the first bridge portion 801 be arranged in the first piezoelectric layer 108.First bridge portion 801 is unfilled (that is, being filled with air).Second bridge portion 802 is arranged in the second piezoelectric layer 112.Second bridge portion 802 is unfilled (that is, being filled with air).First and second bridge portions 801,802 are arranged to the periphery of the active area 114 along DBAR800, and promote the pattern in the active area 114 of restriction DBAR800.In order to the improvement in the pattern restriction in the active area of DBAR800 is described, provide the first and second bridge portions 801,802 separately with about 5.0 μm of width (x dimension), 500A height and the lap 113 of overlapping with chamber 106 2.0 μm.Such as, compared with the known DBAR not having bridge portion (according to the frequency run, under 0.95GHz), by using the first and second bridge portions 801,802 of representative embodiment, owing to increasing restriction to strange mould in DBAR800, so the Q of expection DBAR800
oimprove about 200%.
Fig. 8 B illustrates the first bridge portion 803 be arranged in the first piezoelectric layer 108.First bridge portion 803 fills.Second bridge portion 804 is arranged in the second piezoelectric layer 112.Second bridge portion 804 fills.First and second bridge portions 803,804 are arranged to the periphery of the active area 114 along DBAR800, and promote the pattern in the active area of restriction DBAR800.For with the first and second bridge portions 801,802, there is same widths, highly and the first and second bridge portions 803,804 that the are identical and lap 113 in chamber 106, use the first and second bridge portions 803,804, expection has the Q be similar to for desired by the first and second bridge portions 801,802
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Fig. 8 C illustrates the first bridge portion 801 be arranged in the first piezoelectric layer 108.First bridge portion 801 is unfilled.Second bridge portion 804 is arranged in the second piezoelectric layer 112.Second bridge portion 804 fills.First and second bridge portions 801,804 are arranged to the periphery of the active area 114 along DBAR800, and promote the pattern in the active area 114 of restriction DBAR800.For with the first and second bridge portions 801,802, there is same widths, highly and the first and second bridge portions 801,804 that the are identical and lap 113 in chamber 106, use the first and second bridge portions 801,804, expection has the Q be similar to for desired by the first and second bridge portions 801,802
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Fig. 8 D illustrates the first bridge portion 803 be arranged in the first piezoelectric layer 108.First bridge portion 803 fills.Second bridge portion 802 is arranged in the second piezoelectric layer 112.Second bridge portion 802 is unfilled (that is, being filled with air).First and second bridge portions 803,802 are arranged to the periphery of the active area 114 along DBAR800, and promote the pattern in the active area 114 of restriction DBAR800.For with the first and second bridge portions 801,802, there is same widths, highly and the first and second bridge portions 803,802 that the are identical and lap 113 in chamber 106, use the first and second bridge portions 803,802, expection has the Q be similar to for desired by the first and second bridge portions 801,802
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Fig. 9 A-9D illustrates the sectional view of the DBAR900 according to representative embodiment.DBAR900 comprises setting multiple layers on the substrate 105, and substrate 105 has chamber 106.A lot of aspect of DBAR900 and DBAR100-800 are common, and will no longer repeat, to avoid making the description indigestibility to current described representative embodiment.
Fig. 9 A illustrates and is arranged in the second electrode 111 and the first bridge portion 901 partly extended in planarization layer 109.First bridge portion 901 is unfilled (that is, being filled with air).Second bridge portion 902 is arranged in the second piezoelectric layer 112.Second bridge portion 902 is unfilled (that is, being filled with air).First and second bridge portions 901,902 are arranged to the periphery of the active area 114 along DBAR900, and promote the pattern in the active area 114 of restriction DBAR900.In order to the improvement in the pattern restriction in the active area of DBAR900 is described, provide the first and second bridge portions 901,902 separately with about 5.0 μm of width (x dimension), 500A height and the lap 113 of overlapping with chamber 106 2.0 μm.Such as, compared with the known DBAR not having bridge portion (according to the frequency run, under 0.95GHz), by using the first and second bridge portions 901,902 of representative embodiment, owing to increasing restriction to strange mould in DBAR900, so the Q of expection DBAR900
oimprove about 200%.
Fig. 9 B illustrates and is arranged in the second electrode 111 and the first bridge portion 903 partly extended in planarization layer 109.First bridge portion 903 fills.Second bridge portion 904 is arranged in the second piezoelectric layer 112.Second bridge portion 904 fills.First and second bridge portions 903,904 are arranged to the periphery of the active area 114 along DBAR900, and promote the pattern in the active area 114 of restriction DBAR900.For with the first and second bridge portions 901,902, there is same widths, highly and the first and second bridge portions 903,904 that the are identical and lap 113 in chamber 106, use the first and second bridge portions 903,904, expection has the Q be similar to for desired by the first and second bridge portions 901,902
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Fig. 9 C illustrates and is arranged in the second electrode 111 and the first bridge portion 901 partly extended in planarization layer 109.First bridge portion 901 is unfilled (that is, being filled with air).Second bridge portion 904 is arranged in the second piezoelectric layer 112.Second bridge portion 904 fills.First and second bridge portions 901,904 are arranged to the periphery of the active area 114 along DBAR900, and promote the pattern in the active area 114 of restriction DBAR900.For with the first and second bridge portions 901,902, there is same widths, highly and the first and second bridge portions 901,904 that the are identical and lap 113 in chamber 106, use the first and second bridge portions 901,904, expection has the Q be similar to for desired by the first and second bridge portions 901,902
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Fig. 9 D illustrates and is arranged in the second electrode 111 and the first bridge portion 903 partly extended in planarization layer 109.First bridge portion 903 fills.Second bridge portion 902 is arranged in the second piezoelectric layer 112.Second bridge portion 902 is unfilled (that is, being filled with air).First and second bridge portions 903,902 are arranged to the periphery of the active area 114 along DBAR900, and promote the pattern in the active area 114 of restriction DBAR900.For with the first and second bridge portions 901,902, there is same widths, highly and the first and second bridge portions 903,902 that the are identical and lap 113 in chamber 106, use the first and second bridge portions 903,902, expection has the Q be similar to for desired by the first and second bridge portions 901,902
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Figure 10 A-10D illustrates the sectional view of the DBAR1000 according to representative embodiment.DBAR1000 comprises setting multiple layers on the substrate 105, and substrate 105 has chamber 106.A lot of aspect of DBAR1000 and DBAR100-900 are common, and will no longer repeat, to avoid making the description indigestibility to current described representative embodiment.
Figure 10 A illustrates the first bridge portion 1001 be arranged in the second piezoelectric layer 112.First bridge portion 1001 is unfilled (that is, being filled with air).Second bridge portion 1002 is arranged in third electrode 101.Second bridge portion 1002 is unfilled (that is, being filled with air).First and second bridge portions 1001,1002 are arranged to the periphery of the active area 114 around DBAR1000, and promote the pattern in the active area 114 of restriction DBAR1000.In order to the improvement in the pattern restriction in the active area of DBAR1000 is described, provide the first and second bridge portions 1001,1002 separately with about 5.0 μm of width (x dimension), 500A height and the lap 113 of overlapping with chamber 106 2.0 μm.(according to the frequency run compared with the known DBAR not having bridge portion, such as under 0.95GHz), by using the first and second bridge portions 1001,1002 of representative embodiment, owing to increasing restriction to strange mould in DBAR1000, so the Q of expection DBAR1000
oimprove about 200%.
Figure 10 B illustrates the first bridge portion 1003 be arranged in the second piezoelectric layer 112.First bridge portion 1003 fills.Second bridge portion 1004 is arranged in third electrode 101.Second bridge portion 1004 fills.First and second bridge portions 1003,1004 are arranged to the periphery of the active area 114 around DBAR1000, and promote the pattern in the active area 114 of restriction DBAR1000.For with the first and second bridge portions 1001,1002, there is same widths, highly and the first and second bridge portions 1003,1004 that the are identical and lap 113 in chamber 106, use the first and second bridge portions 1003,1004, expection has the Q be similar to for desired by the first and second bridge portions 1001,1002
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Figure 10 C illustrates the first bridge portion 1001 be arranged in the second piezoelectric layer 112.First bridge portion 1001 is unfilled (that is, being filled with air).Second bridge portion 1004 is arranged in third electrode 101.Second bridge portion 1004 fills.First and second bridge portions 1001,1004 are arranged to the periphery of the active area 114 around DBAR1000, and promote the pattern in the active area 114 of restriction DBAR1000.For with the first and second bridge portions 1001,1002, there is same widths, highly and the first and second bridge portions 1001,1004 that the are identical and lap 113 in chamber 106, use the first and second bridge portions 1001,1004, expection has the Q be similar to for desired by the first and second bridge portions 1001,1002
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Figure 10 D illustrates the first bridge portion 1003 be arranged in the second piezoelectric layer 112.First bridge portion 1003 fills.Second bridge portion 1002 is arranged in third electrode 101.Second bridge portion 1002 is unfilled (that is, being filled with air).First and second bridge portions 1003,1002 are arranged to the periphery of the active area 114 around DBAR1000, and promote the pattern in the active area 114 of restriction DBAR1000.For with the first and second bridge portions 1001,1002, there is same widths, highly and the first and second bridge portions 1003,1002 that the are identical and lap 113 in chamber 106, use the first and second bridge portions 1003,1002, expection has the Q be similar to for desired by the first and second bridge portions 1001,1002
oimprove.Advantageously, the bridge portion of filling is used to provide firmer structure.
Figure 11 A-11D illustrates the sectional view of the DBAR1100 according to representative embodiment.DBAR1100 comprises setting multiple layers on the substrate 105, and substrate 105 has chamber 106.A lot of aspect of DBAR1100 and DBAR100-1000 are common, and will no longer repeat, to avoid making the description indigestibility to current described representative embodiment.
Figure 11 A illustrates and is arranged in the second electrode 111 and the first bridge portion 110 extended in planarization layer 109.First bridge portion 110 is unfilled (that is, being filled with air).Second bridge portion 104 is arranged in third electrode 101.Second bridge portion 104 is unfilled (that is, being filled with air).First and second bridge portions 110,104 are arranged to the periphery of the active area 114 along DBAR1100, and promote the pattern in the active area of restriction DBAR1100.Exemplarily, the first and second bridge portions 104,110 have about 5.0 μm of width (x dimension), 500A height and the lap 113 of overlapping with chamber 106 2.0 μm separately.
In active area 114, internal protrusion region 1101 is set above third electrode 101.The edge of internal protrusion region 1101 with active area separates by gap 1102, according to product performance demands, each gap 1102 has the width (in the x dimension of the coordinate system shown in Figure 11 A) of about 1.0 μm to about 10.0 μm and the thickness (in the y dimension of the coordinate system shown in Figure 11 A) of 100A to 1000A.The total U.S. Patent application No.13/074 being entitled as " StackedBulkAcousticResonatorandMethodofFabricatingSame " on March 29th, 2011 is submitted people such as AlexandreShirakawa, in 094, describe a lot of details in internal protrusion region 1101.The open text of this part of U.S. Patent application is incorporated in this specification by reference clearly.
Figure 11 B illustrates and is arranged in the second electrode 111 and the first bridge portion 110 extended in planarization layer 109.First bridge portion 110 is unfilled (that is, being filled with air).Second bridge portion 104 is arranged in third electrode 101.Second bridge portion 104 is unfilled (that is, being filled with air).DBAR1100 shown in Figure 11 B comprises and is arranged on internal protrusion region 1101 above third electrode 101 and outer projection region 1103.As shown in Figure 11 B, outer projection region 1103 is near the edge of active area 114, and according to product performance demands, outer projection region 1103 has the width (in the x dimension of the coordinate system shown in Figure 11 B) of about 1.0 μm to about 10.0 μm and the thickness (in the y dimension of the coordinate system shown in Figure 11 B) of 100A to 1000A.The total U.S. Patent application No.13/074 being entitled as " StackedBulkAcousticResonatorandMethodofFabricatingSame " on March 29th, 2011 is submitted people such as AlexandreShirakawa, in 094, describe a lot of details in outer projection region 1103, this part of patent application is as above incorporated in this specification by reference.
The combination in the first and second bridge portions 104 and 110, internal protrusion region 1101 and outer projection region 1103 improves the pattern restriction in the active area 114 of DBAR1100 further.Figure 11 C is the strange mould Q factor (Q that measurement is shown
othe curve chart of)-resonance frequency, wherein track 1110 corresponds to known DBAR (not having bridge portion, internal protrusion region and outer projection region), track 1120 corresponds to the DBAR according to representative embodiment, such as, stack body acoustic resonator 1100 shown in Figure 11 A.Compared with track 1110, track 1120 illustrates by comprising bridge portion and internal protrusion region and substantially improving Q
o.
According to exemplary embodiment, describe the BAW resonator structure and their manufacture method that comprise bridge portion.One skilled in the art will appreciate that can with good grounds a lot of amendment of the present invention, and these amendments remain in the scope of claims.To those skilled in the art, after consulting specification, drawings and the claims here, the modification of these and other will become apparent.Therefore, the present invention is unrestricted within the spirit and scope of claims.
Claims (20)
1. a bulk acoustic wave BAW resonator structure, comprising:
Substrate, it comprises chamber;
First electrode, it is arranged over the substrate;
Planarization layer, it arranges over the substrate and is close in described first electrode, and described planarization layer is not overlapping with described chamber;
First piezoelectric layer, it is arranged on the first electrode;
Second electrode, it is arranged on described first piezoelectric layer;
Second piezoelectric layer, it is arranged on described second electrode;
Third electrode, it is arranged on described second piezoelectric layer; With
Bridge portion, it is arranged between described first electrode and described third electrode, and described bridge portion extends across the edge in described chamber.
2. BAW resonator structure according to claim 1, wherein, described bridge portion is the first bridge portion, and described BAW resonator structure also comprises the second bridge portion be arranged between described first electrode and described third electrode.
3. BAW resonator structure according to claim 2, wherein, described BAW resonator structure has the first periphery active area of described BAW resonator structure being carried out to gauge, and described first bridge portion is arranged along described first periphery.
4. BAW resonator structure according to claim 3, wherein, described BAW resonator structure has the second periphery active area of described BAW resonator structure being carried out to gauge, and described second bridge portion is arranged along described second periphery.
5. BAW resonator structure according to claim 1, wherein, described bridge portion comprises the packing material with acoustic impedance.
6. BAW resonator structure according to claim 2, wherein, described first bridge portion comprises the packing material with acoustic impedance.
7. BAW resonator structure according to claim 2, wherein, described second bridge portion comprises the packing material with acoustic impedance.
8. BAW resonator structure according to claim 1, wherein, described bridge portion has trapezoidal sectional shape.
9. BAW resonator structure according to claim 1, wherein, described bridge portion comprises the first bridge portion be arranged in the second electrode, and described BAW resonator structure also comprises the second bridge portion be arranged in third electrode.
10. BAW resonator structure according to claim 9, wherein, described first bridge portion is arranged along the first periphery of described BAW resonator structure.
11. BAW resonator structures according to claim 10, wherein, described second bridge portion is arranged along the second periphery of described BAW resonator structure.
12. BAW resonator structures according to claim 1, wherein, described bridge portion comprises the first bridge portion be arranged in described first piezoelectric layer, and described BAW resonator structure also comprises the second bridge portion be arranged in described second piezoelectric layer.
13. BAW resonator structures according to claim 12, wherein, described first bridge portion is arranged along the first periphery of described BAW resonator structure.
14. BAW resonator structures according to claim 13, wherein, described second bridge portion is arranged along the second periphery of described BAW resonator structure.
15. BAW resonator structures according to claim 2, wherein, described first bridge portion and described second bridge portion are not arranged in described first electrode.
16. BAW resonator structures according to claim 6, wherein, described packing material comprises can not etching silicon borate glass (NEBSG).
17. BAW resonator structures according to claim 7, wherein, described packing material comprises can not etching silicon borate glass (NEBSG).
18. 1 kinds of bulk acoustic wave BAW resonator structures, comprising:
Substrate, it comprises chamber;
First electrode, it is arranged over the substrate;
Planarization layer, it arranges over the substrate and is close in described first electrode, and described planarization layer is not overlapping with described chamber;
First piezoelectric layer, it is arranged on the first electrode;
Second electrode, it is arranged on described first piezoelectric layer;
Second piezoelectric layer, it is arranged on described second electrode;
Third electrode, it is arranged on described second piezoelectric layer;
Bridge portion, it is arranged between described first electrode and described third electrode, and described bridge portion extends across the edge in described chamber; With
Internal protrusion region, it is arranged on described third electrode.
19. BAW resonator structures according to claim 18, also comprise the outer projection region be arranged on described third electrode.
20. BAW resonator structures according to claim 18, wherein, described BAW resonator structure has the first periphery active area of described BAW resonator structure being carried out to gauge, and described bridge portion is arranged along described first periphery, and described internal protrusion region is in described active area.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/074,262 | 2011-03-29 | ||
| US13/074,262 US9136818B2 (en) | 2011-02-28 | 2011-03-29 | Stacked acoustic resonator comprising a bridge |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102739191A CN102739191A (en) | 2012-10-17 |
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| DE102018101442B4 (en) * | 2018-01-23 | 2019-09-12 | RF360 Europe GmbH | BAW resonator with increased quality factor |
| CN111355466A (en) * | 2018-12-20 | 2020-06-30 | 天津大学 | Bulk acoustic wave resonator, filter and electronic device with multi-beam eave gap |
| CN111384911A (en) * | 2018-12-31 | 2020-07-07 | 天津大学 | Device and method for adjusting performance of acoustic resonator based on beam eave size |
| CN110868177B (en) * | 2019-04-23 | 2023-08-15 | 中国电子科技集团公司第十三研究所 | Resonator and filter |
| CN110868170B (en) * | 2019-04-23 | 2024-02-13 | 中国电子科技集团公司第十三研究所 | Acoustic resonator |
| CN110635775B (en) * | 2019-09-10 | 2023-09-12 | 苏州汉天下电子有限公司 | Resonator and method for manufacturing the same |
| CN110868179A (en) * | 2019-10-11 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Resonator packaging system |
| CN110868178B (en) * | 2019-10-11 | 2024-04-16 | 中国电子科技集团公司第十三研究所 | Resonator packaging system |
| CN111010134B (en) * | 2019-10-26 | 2021-06-01 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, frequency adjustment method for bulk acoustic wave resonator, filter, and electronic device |
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| US5587620A (en) | 1993-12-21 | 1996-12-24 | Hewlett-Packard Company | Tunable thin film acoustic resonators and method for making the same |
| US6107721A (en) | 1999-07-27 | 2000-08-22 | Tfr Technologies, Inc. | Piezoelectric resonators on a differentially offset reflector |
| KR100616508B1 (en) * | 2002-04-11 | 2006-08-29 | 삼성전기주식회사 | Film bulk acoustic resonator and method for fabrication thereof |
| US7280007B2 (en) | 2004-11-15 | 2007-10-09 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Thin film bulk acoustic resonator with a mass loaded perimeter |
| US7388454B2 (en) | 2004-10-01 | 2008-06-17 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using alternating frame structure |
| US8981876B2 (en) | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
| US7629865B2 (en) | 2006-05-31 | 2009-12-08 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters |
| US8902023B2 (en) | 2009-06-24 | 2014-12-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
| US8248185B2 (en) | 2009-06-24 | 2012-08-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator structure comprising a bridge |
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